JPS62299072A - Hot-electron transistor - Google Patents
Hot-electron transistorInfo
- Publication number
- JPS62299072A JPS62299072A JP14237986A JP14237986A JPS62299072A JP S62299072 A JPS62299072 A JP S62299072A JP 14237986 A JP14237986 A JP 14237986A JP 14237986 A JP14237986 A JP 14237986A JP S62299072 A JPS62299072 A JP S62299072A
- Authority
- JP
- Japan
- Prior art keywords
- collector
- barrier
- electrons
- collector barrier
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002784 hot electron Substances 0.000 title claims description 3
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 abstract description 2
- 230000003321 amplification Effects 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
Ｈ）産業上の利用分野
本発明にホットエレクトロントランジスタ（以下１（Ｅ
Ｔと称丁）Ｃ関するものである。DETAILED DESCRIPTION OF THE INVENTION H) Industrial Field of Application The present invention applies to hot electron transistors (hereinafter 1 (E
This is related to T and C.
（噂従米の技術 ）ＬＥＴに５ノーのへテロ４４ｆＣ，即ち、エミッタ。(Rumor-based technology ) Hetero 44fC with 5 no on LET, ie emitter.
エミッタバリア、ペース、コレクタバリア、コレクタか
らなるトランジスタで１通′盾、そのエミッタバリア及
びコレクタバリアは牛絶縁注のＡＩＧａＡａＣａ化ガリ
ウム・アルミニウム】で、又その他の層ａｎ型のＧａＡ
ｍ （砒化ガリウ→で＃Ｉｔ我さルる（例えばＡｐｐｌ
、Ｐｈｙｓ、Ｌｅｔｔ、４７ｕｕ＋＄、１９８５ 、Ｐ
ｌｌ ０５−ｐＥｌｅｃｔｒｏｎｉａｓ Ｌｅｔｔ、
２１（７１ｊ １９８５．ｔ’７５７参照ＨｊＥＴの動
作のため（二ニ、エミッタ昏ベース１４及びペース・フ
レフタ間（：、犬々パＸアス成圧Ｖ１！、ＶＣＢが印加
される。ＨＥＴにおいて、エミッタバリアに１００〜３
００Ａの厚みで、バリアの高さ框Ｑ、３ｅｖ程度である
之め、電界がか＼るとエミッタの電子にバリア七トンネ
ル効果（二重つて通り抜はペースに注入される。この様
（＝注入され九電子ば様々な散乱全党はエネルギ？失っ
ていくが、コレクタバリアエリ犬さいエネルギτ弔）つ
ものがコレクタに達する。ＶＢ ｘＴ：変化させ０こと
にエリエミッタの電子のトンネル確率が変化するためコ
レクタ電流が変化しトランジスタ動作が行われる。One shield consists of a transistor consisting of an emitter barrier, a paste, a collector barrier, and a collector.The emitter barrier and collector barrier are made of gallium aluminum oxide (AIGaAaCa), and the other layers are made of an-type GaA
m (Arsenic Gariu→de#Itgasaruru (for example, Appl
, Phys, Lett, 47uu+$, 1985, P
ll 05-pElectronias Lett,
21 (71j 1985. t'757 Reference HjET) For the operation of HjET (2nd, between the emitter base 14 and the pace flfter (:, dog pass X ass compression V1!, VCB is applied. In HET, the emitter 100-3 to barrier
Since the thickness of the barrier is 00A and the height of the barrier is Q, about 3ev, when the electric field is heated, the electrons at the emitter undergo a tunneling effect (double pass through and are injected into the pace. Like this (= If nine electrons are injected, all the scattered particles will lose energy, but the collector barrier energy τ) will reach the collector.VB Therefore, the collector current changes and transistor operation is performed.
（ハ）発明が解決しようとする問題点
工きツタから注入された電子のうちコレクタに遅した成
子のｍｔＪ合、即ちトランスファ比α（＝Ｉａ／ｌｘ）
や電流増＋−率β（＝Ｉｃ／Ｉｓ）で見ると、従来のＨ
ＥＴでにコレクタバリアで阻止される電子の羅準が比較
的太さいため、尚いαｆβを得ることが難しい。(c) Problems to be solved by the invention Among the electrons injected from the ivy, the mtJ ratio of Nariko that is delayed to the collector, that is, the transfer ratio α (=Ia/lx)
In terms of current increase rate β (=Ic/Is), conventional H
Since the range of electrons blocked by the collector barrier in ET is relatively large, it is still difficult to obtain αfβ.
に）問題点を解決するため０手段
本発明の）ｉＥＴは、第１囚のバンド構造で示す如く、
コレクタバリアを超格子で構成したこと勿特徴とする。iET of the present invention has the following structure as shown in the band structure of the first prisoner:
Of course, the collector barrier is composed of a superlattice.
（ホ）作 用
適当に設計され之超格子円にμｍそれ自体周知な如く、
正規の伝導帯の下Ｃ二も電子が存在でさる補助伝４帝が
発生する。第１図？参照するに。(e) Function As is well known in the properly designed superlattice circle,
The presence of electrons in C2 below the regular conduction band also generates the 4th auxiliary electron. Figure 1? For reference.
超格子からなるコレクタバリア内（二もｆ＋巌で示す補
助云４帯（１）（２）が存在し、従りてバイアス電圧Ｖ
Ｂｘ、ＶｃＢＩ：０刀Ω時、エミッタバリアｔトンネル
通過した電子（３）のうち、コレクタバリアより大きな
エネルギ勿侍つものは従来の通すコレクタ（二到遅し、
−万、コレクタバリアＬり小さいエネルギを待つもので
も補助伝導帯（ｉｆｆ （２）’ｒ：経てコレクタ（二
通する。μｐち、この場合、コレクタバリアで阻止され
る電子の確率が低くなりαｆβが改＋４される。There are four auxiliary bands (1) and (2) in the collector barrier consisting of a superlattice (also indicated by f + rock), and therefore the bias voltage V
When Bx, VcBI: 0Ω, among the electrons (3) that have passed through the emitter barrier t tunnel, those that have a larger energy than the collector barrier are transferred to the conventional collector (secondary later,
- 10,000, even if the collector barrier L is waiting for a small energy, the auxiliary conduction band (if is changed to +4.
（へ）実 施 例
第２囚に本発明実施例のＢＥＴ乞示す。同図（二て、
Ｃ１（１に基板、 （１１）にコレクタ、αシα；レク
タバリア、α３１ｉペース、■にエミッタバリア、ｕ９
ぼエミッタであり１本発明の％倣としてコレクタバリア
ｕ４ニ超格子力・らなる。即ち、コレクタバリア内カは
、約５ＯＡ厚みのＧａＡａとＡ ｌｊ：、ｏ、３Ｇａ
０．７Ａｓとｔ父互に２０層積み厘ね、全体として約１
０００Ａの厚みに形成されたものである。コレクタバリ
アＩｉａ七傳底する各層はノンドープであ１ハ従りてコ
レクタバリア（１４ば牛絶縁注七呈する。(To) Example I would like to ask the second prisoner to place a bet according to the example of the present invention. Same figure (second,
C1 (1 is the substrate, (11) is the collector, α is the collector barrier, α31i is the paste, ■ is the emitter barrier, u9 is
It is an emitter, and as a copy of the present invention, it consists of a collector barrier U4 and a superlattice force. That is, the power inside the collector barrier is made of GaAa with a thickness of about 5OA and Alj:, o, 3Ga.
20 layers of 0.7As and t are stacked on each other, totaling about 1
It is formed to a thickness of 000A. Each of the underlying layers of the collector barrier Iia is non-doped and therefore serves as a collector barrier.
その他の構成は従来と同様であ昏へ基板ｕ１．コレクタ
αもベースｕ３１及びエミッタｕ５１は共に１〜１０Ω
ｃｓＩ程度のｎ型ＧａＡｓかうなり、コレクタ（１υ及
びエミッタ四μ約３００ＯＡ、ベースα３１ニ約１０Ｏ
Ａの厚みｔ；にする。又エミッタバリアα士にノンドー
１のＡＪｏ、３ Ｇａ Ｏ，７ＡｊＸ）”６７１Ｃ’Ｊ
約１０ＯＡの厚みを持つ。The rest of the configuration is the same as the conventional one. Collector α, base u31 and emitter u51 are both 1~10Ω
csI n-type GaAs, collector (1υ and emitter 4μ approximately 300OA, base α31 approximately 100A)
Make the thickness of A t; Also, non-do 1 AJo, 3 Ga O, 7AjX)"671C'J on the emitter barrier α
It has a thickness of approximately 10OA.
本実ｍ９１１ＨＥＴｌ：ｇいて、コレクタバリアｕシを
含め、各層に、基板（１（Ｉ上にＭＢＥ法にエリ頑欠推
撰形底される。尚、１Ｑぼコレクタ電極、 （１７１α
ベース電極、賭はエミッタ電極であり、これら電極材と
して１ｑＡｕ （ｍ）、ＡｕＧｅ （金、ゲルマニウム
）、Ｎｌにッケル〕の積層体が適当である〇（ト〕発明
の効果
不発ｆｉｔ＝ＬればｋＩＥＴのトランスファ比αｆ電流
ｐａ幅率βの値か大きくなり、ＨＥＴの特注が向上する
。Honji M911HETl: G, each layer including the collector barrier board is formed into a rugged shape by MBE method on the substrate (1).
The base electrode is the emitter electrode, and a laminate of 1qAu (m), AuGe (gold, germanium), and Nl is suitable as the electrode material. The values of transfer ratio αf current pa width ratio β of kIET become larger, and customization of HET is improved.
４、凹面の間車な脱明
図ｒｃ不発明？ホし、第１図ばバンド得造図、第２因は
断面図である。4. Is it an uninvented RC diagram with a concave space between the wheels? The first figure is a schematic diagram of the band, and the second figure is a cross-sectional view.
Claims (1)
するホットエレクトロントランジスタ。(1) A hot electron transistor characterized in that the collector barrier is composed of a superlattice.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14237986A JPS62299072A (en) | 1986-06-18 | 1986-06-18 | Hot-electron transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14237986A JPS62299072A (en) | 1986-06-18 | 1986-06-18 | Hot-electron transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62299072A true JPS62299072A (en) | 1987-12-26 |
Family
ID=15314002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14237986A Pending JPS62299072A (en) | 1986-06-18 | 1986-06-18 | Hot-electron transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62299072A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5525818A (en) * | 1992-08-31 | 1996-06-11 | Texas Instruments Incorporated | Reducing extrinsic base-collector capacitance |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62176162A (en) * | 1986-01-30 | 1987-08-01 | Agency Of Ind Science & Technol | Negative resistance element |
| JPS62203371A (en) * | 1986-03-04 | 1987-09-08 | Fujitsu Ltd | High-speed semiconductor device |
-
1986
- 1986-06-18 JP JP14237986A patent/JPS62299072A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62176162A (en) * | 1986-01-30 | 1987-08-01 | Agency Of Ind Science & Technol | Negative resistance element |
| JPS62203371A (en) * | 1986-03-04 | 1987-09-08 | Fujitsu Ltd | High-speed semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5525818A (en) * | 1992-08-31 | 1996-06-11 | Texas Instruments Incorporated | Reducing extrinsic base-collector capacitance |
| US5789301A (en) * | 1992-08-31 | 1998-08-04 | Triquint Semiconductor, Inc. | Method for reducing extrinsic base-collector capacitance |
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