JPS62293786A - Semiconductor photodetector device - Google Patents
Semiconductor photodetector deviceInfo
- Publication number
- JPS62293786A JPS62293786A JP61136197A JP13619786A JPS62293786A JP S62293786 A JPS62293786 A JP S62293786A JP 61136197 A JP61136197 A JP 61136197A JP 13619786 A JP13619786 A JP 13619786A JP S62293786 A JPS62293786 A JP S62293786A
- Authority
- JP
- Japan
- Prior art keywords
- light absorbing
- absorbing layer
- resistance
- layer
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 230000031700 light absorption Effects 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000000969 carrier Substances 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract description 7
- 238000005215 recombination Methods 0.000 abstract description 7
- 229910001297 Zn alloy Inorganic materials 0.000 abstract description 4
- 238000005275 alloying Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 230000008033 biological extinction Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- -1 Fe or cobalt (Go) Chemical class 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔概要〕
本発明は、半導体受光装置に於いて、高抵抗のＩ ｎｌ
−ＸＧ ａｘ Ａ ！ｉｙ Ｐ ｌ−ｙ （０≦ｘ、
ｙ≦１）光吸収層上にそれより禁制帯幅が広い高抵
抗の窓層を形成することに依り、光吸収層内にて発生し
たキャリヤが表面再結合で消滅することを防止して利得
を向上できるようにした。[Detailed Description of the Invention] 3. Detailed Description of the Invention [Summary] The present invention provides a semiconductor light-receiving device in which high-resistance I nl
-XG ax A! iy P l-y (0≦x,
y≦1) By forming a high-resistance window layer with a wider forbidden band width on the light absorption layer, carriers generated in the light absorption layer are prevented from disappearing due to surface recombination, thereby increasing gain. We made it possible to improve.
本発明は、光導電型受光素子（ｐｈｏｔｏ ｃｏｎｄ
ｕｃｔｉｖｅ ｄｅｔｅｃｔｏｒ）と呼ばれる半導体
受光装置の改良に関する。The present invention relates to a photoconductive type light receiving element (photocond).
This invention relates to an improvement of a semiconductor light receiving device called an active detector.
第４図は波長１ 〔μｍ）帯の光通信に用いられる光導
電型受光素子の従来例を表す要部切断側面図である。FIG. 4 is a cross-sectional side view of a main part of a conventional example of a photoconductive type light receiving element used for optical communication in the wavelength band of 1 [μm].
図に於いて、１はＦｅを添加した半絶縁性ＩｎＰ基板、
２は同じ＜Ｆｅが添加され且つ半絶縁性ＩｎＰ基板１と
格子整合した高抵抗（抵抗率が例えば１０３ 〔Ω・ｃ
ｍ〕オーダ）の１ ｎｏ、５３Ｇａｏ、４？Ａｓ光吸収
層、３及び４はＡｕ−Ｚｎ合金からなる電極、ｅは電子
、ｈは正孔、ｈνは光をそれぞれ示している。In the figure, 1 is a semi-insulating InP substrate doped with Fe;
2 is the same < Fe-doped high resistance (resistivity is, for example, 103 [Ω・c
m] order) 1 no, 53 Gao, 4? As light absorbing layer, 3 and 4 are electrodes made of Au-Zn alloy, e is an electron, h is a hole, and hv is light, respectively.
この受光素子では、電極３及び４間に図示の極性で電圧
を印加した状態に於いて上面から光ｈνが入射すると、
光吸収層２に於ける禁制帯幅に相当する波長１．６５（
μｍ〕以下の光はそこで吸収され、その吸収された光に
依り、光吸収層２内に電子・正孔対が生成され、前記印
加された電圧に基づく電界で、電子ｅは電極３に、また
、正孔ｈは電極４にそれぞれ走行し、外部回路には電流
が流れる。In this light receiving element, when light hν is incident from the top surface while a voltage is applied between the electrodes 3 and 4 with the polarity shown,
The wavelength 1.65 (corresponding to the forbidden band width in the light absorption layer 2)
μm] or less is absorbed there, and the absorbed light generates electron-hole pairs in the light absorption layer 2, and in the electric field based on the applied voltage, the electrons e are transferred to the electrode 3. Further, the holes h travel to the electrodes 4, and a current flows in the external circuit.
前記光導電型受光素子では、光吸収層２の表面は大気中
に露出された構造になっている為、入射された光ｈνに
依って励起されたキャリヤが表面再結合で消滅し易く、
充分な利得が得られない欠点がある。In the photoconductive type light-receiving element, the surface of the light absorption layer 2 is exposed to the atmosphere, so carriers excited by the incident light hν are easily annihilated by surface recombination.
The disadvantage is that sufficient gain cannot be obtained.
本発明は、この種の半導体受光装置の構造に極めて簡単
な改変を加えることに依り、利得を大きく向上させるも
のである。The present invention greatly improves the gain by making extremely simple modifications to the structure of this type of semiconductor photodetector.
本発明に依る半導体受光装置に於いては、高抵抗のＩｎ
、−ＸＧａｇ Ａｓ、ＰＩ−ｙ （０≦ｘ、ｙ≦１）
光吸収層（例えばＩｎ１−ｘ Ｑａ、Ａｓ、Ｐ＋−ｙ（
０≦ｘ、 ｙ≦１）光吸収層５）と、その上に形成さ
れ該光吸収層に於ける禁制帯幅よりも広いそれを有する
高抵抗の化合物半導体結晶からなる窓層（例えば高抵抗
のＩｎＰ窓層６或いは高抵抗のＡｉｔｘ Ｉｎ、−ＸＡ
ｓ窓層７）とを備えてなる構成になっている。In the semiconductor photodetector according to the present invention, high resistance In
, -XGag As, PI-y (0≦x, y≦1)
Light absorption layer (e.g. In1-x Qa, As, P+-y (
0≦x, y≦1) a light absorption layer 5) and a window layer (for example, a high resistance InP window layer 6 or high resistance Aitx In, -XA
s window layer 7).
前記手段を採ることに依り、光が入射して光吸収層内で
発生されたキャリヤが表面再結合で消滅することは有効
に防止され、従って、利得は向上する。By adopting the above-mentioned means, it is effectively prevented that carriers generated in the light absorption layer upon incident light are annihilated by surface recombination, and therefore the gain is improved.
第１図は本発明に於ける第１の実施例の要部切断側面図
を表し、第４図に於いて用いた記号と同記号は同部分を
表すか或いは同じ意味を持つものとする。FIG. 1 shows a cutaway side view of essential parts of a first embodiment of the present invention, and the same symbols as those used in FIG. 4 represent the same parts or have the same meanings.
図に於いて、５は半絶縁性１ｎＰ基板１と同様にＦｅが
添加され且つそれに格子整合した高抵抗のＩ ｎｚ Ｇ
ａ＋−ｘ ＡｓｙＰ＋−ｙ （０≦ｘ、 ｙ≦１）光吸
収層、６は高抵抗１ｎＰ窓層、３Ａ及び４Ａはｐ型導電
領域をそれぞれ示している。尚、ｐ型導電領域３Ａ及び
４Ａは、蒸着法及び合金化熱処理にてＡｕ −Ｚｎ合金
からなる電極３及び４を形成した際、Ｚｎが半導体中に
滲み出して形成されるものであって、高抵抗１ｎＰ （
或いはＡ１１ｎＡｓ）窓Ｎ６を突き抜け、Ｉ ｎｚ Ｇ
ａ Ｉ−ｘ Ａ Ｓｙｐ＋−ｙ光吸収層５にまで達す
るようにする。In the figure, 5 is a high-resistance InzG layer doped with Fe and lattice matched to the semi-insulating 1nP substrate 1.
a+-x AsyP+-y (0≦x, y≦1) light absorption layer, 6 is a high resistance 1nP window layer, 3A and 4A are p-type conductive regions, respectively. The p-type conductive regions 3A and 4A are formed when Zn oozes into the semiconductor when the electrodes 3 and 4 made of Au-Zn alloy are formed by vapor deposition and alloying heat treatment. High resistance 1nP (
Or A11nAs) Pass through window N6 and I nz G
a I-x A Syp+-y so as to reach the light absorption layer 5.
本実施例で用いている高抵抗の光吸収層５は、液相エピ
タキシャル成長（ｌｉｑｕｉｄ ｐｈａｓｅ ｅｐ
ｉｔａｘｙ：ＬＰＥ）法を適用し、また、Ｆｅなど遷移
金属を添加することに依り、抵抗率が１０３ 〔Ω・０
〕程度であるものが容易に得られる。また、高抵抗の窓
層６は、ＬＰＥ法或いは有機金属化学気相堆積（ｍｅｔ
ａｌｏｒｇａｎｉｃｓ ｃｈｅｍｉｃａｌ ｖａｐ
ｏｒ ｄａｐｏｓｉｔｉｏｎ：ＭＯＣＶＤ）法を適用
し、また、Ｆｅ或いはコバルト（Ｇｏ）などの遷移金属
を添加することに依り、抵抗率が１０’ −１０”〔Ω
・ｃｍ）のものが容易に得られる。The high-resistance light absorption layer 5 used in this example is formed by liquid phase epitaxial growth (liquid phase epitaxial growth).
By applying the LPE method and adding transition metals such as Fe, the resistivity was increased to 103 [Ω・0
] can be easily obtained. Further, the high-resistance window layer 6 is formed by LPE method or organometallic chemical vapor deposition (met).
organics chemical vap
By applying the MOCVD method and adding transition metals such as Fe or cobalt (Go), the resistivity can be increased to 10'-10'' [Ω
・cm) can be easily obtained.
第２図は第１図について説明した実施例に於けるエネル
ギ・バンド・ダイヤグラムを表し、第１図に於いて用い
た記号と同記号は同部分を示すか或いは同じ意味を持つ
ものとする。FIG. 2 shows an energy band diagram in the embodiment described with respect to FIG. 1, and symbols used in FIG. 1 indicate the same parts or have the same meanings.
図に於いて、Ｅｃは伝導帯の底、ＥＦはフェルミ・レベ
ル、Ｅｖは価電子帯の頂、ＥＧＩ、 Ｅａｔ。In the figure, Ec is the bottom of the conduction band, EF is the Fermi level, Ev is the top of the valence band, EGI, Eat.
ＥＧＩはエネルギ・バンド・ギャップ、Ｓは表面をそれ
ぞれ示している。EGI represents the energy band gap, and S represents the surface.
ここで、
Ｅａｓ： １．３５ （ｅＶ）
Ｅａｇ： ０．７５〜１．３５ （ｅＶ）ＥＧ３：
１． ３５ （ｅＶ）
光ｈνの波長：０．９２（μｍ〕以上
である。Here, Eas: 1.35 (eV) Eag: 0.75 to 1.35 (eV) EG3:
1. 35 (eV) Wavelength of light hν: 0.92 (μm) or more.
さて、表面Ｓから入射した光ｈνのうち、波長がＩｎＰ
の禁制帯幅に相当する０、９２（μｍ〕以上のものは、
窓層６で吸収されることはなく、光吸収Ｎ５で吸収され
、利得に寄与する。Now, of the light hν incident from the surface S, the wavelength is InP
0.92 (μm) or more, which corresponds to the forbidden band width of
The light is not absorbed by the window layer 6, but is absorbed by the optical absorption layer N5, contributing to the gain.
本実施例では、光吸収層５の上面が窓層６で覆われてい
る為、光吸収層５で生成されたキャリヤが表面再結合で
消滅するようなことはなく、従って、その利得は向上す
る。In this example, since the upper surface of the light absorption layer 5 is covered with the window layer 6, the carriers generated in the light absorption layer 5 will not disappear due to surface recombination, and therefore the gain will be improved. do.
第３図は本発明に於ける第２の実施例の要部切断側面図
を表し、第１図及び第２図に於いて用いた記号と同記号
は同部分を表すか或いは同じ意味を持つものとする。FIG. 3 shows a cutaway side view of the main parts of the second embodiment of the present invention, and the same symbols as those used in FIGS. 1 and 2 represent the same parts or have the same meanings. shall be taken as a thing.
本実施例が第１図及び第２図に関して説明した実施例と
相違する点は、窓層が高抵抗のＩｎＰではなく、高抵抗
のＡβｘｌｎ＋−、Ａ９からなっていて、Ｉ ｎ Ｘ
Ｇ ａ ＋−＋ｃ Ａ Ｓ ｙ Ｐ ｌ−ｙからなる光
吸収層５及び半絶縁性ＩｎＰからなる基板１と格子整合
させる為にｘ＝０．４７としていることであり、従って
、本実施例に於いては、窓層を記号７で指示しである。This embodiment is different from the embodiments described with reference to FIGS. 1 and 2 in that the window layer is not made of high resistance InP but is made of high resistance Aβxln+-, A9, and
In order to achieve lattice matching with the light absorption layer 5 made of G a +-+c A S y P ly and the substrate 1 made of semi-insulating InP, x = 0.47. In this case, the window layer is designated by the symbol 7.
本実施例で用いている高抵抗の窓層７は、ＬＰＥ法或い
はＭＯＣＶＤ法を適用し、また、Ｆｅなど遷移金属を添
加することで得られる。The high-resistance window layer 7 used in this embodiment is obtained by applying the LPE method or MOCVD method and by adding a transition metal such as Fe.
本実施例に於いて、高抵抗の窓層７を構成している材料
であるＡＡｏ、４７１ｎｏ、ｓ：＋Ａ３の禁制帯幅は１
．４６ ［ｅＶ）であり、従って、波長が０゜８５〔μ
ｍ３以上の光は窓層７では吸収されず、光吸収層５にて
吸収されることになる。In this example, the forbidden band width of AAo, 471no, s:+A3, which is the material constituting the high-resistance window layer 7, is 1.
．． 46 [eV), therefore, the wavelength is 0°85 [μ
Light of m3 or more is not absorbed by the window layer 7, but is absorbed by the light absorption layer 5.
本発明に依る半導体受光装置に於いては、高抵抗のＩ
ｎｌ−、ＱａＸＡ Ｓｙ Ｐ Ｉ−ｙ （０≦ｘ、ｙ
≦１）光吸収層上にそれより禁制帯幅が広い高抵抗の窓
層を形成した構成になっている。In the semiconductor photodetector according to the present invention, a high resistance I
nl-, QaXA Sy P I-y (0≦x, y
≦1) A high-resistance window layer with a wider forbidden band width is formed on the light absorption layer.
前記構成を採ることに依り、光が入射して光吸収層内で
発生されたキャリヤが表面再結合で消滅することは有効
に防止され、従って、利得は向上する。By employing the above structure, carriers generated in the light absorption layer upon incident light are effectively prevented from disappearing due to surface recombination, and therefore the gain is improved.
第１図は本発明に於ける第１の実施例の要部切断側面図
、第２図は第１図に見られる実施例に於けるエネルギ・
バンド・ダイヤグラム、第３図は本発明に於ける第２の
実施例の要部切断側面図、第４図は従来例の要部切断側
面図をそれぞれ表している。
図に於いて、ｌはＦｅを添加した半絶縁性ｉｎＰ基板、
３及び４はＡｕ−Ｚｎ合金からなる電極、５は半絶縁性
ＩｎＰ基板１と同様にＦｅが添加され且つそれに格子整
合した高抵抗のＩｎ、Ｇａ、−８ＡＳＩＩ Ｐ＋−ｙ
（０≦ｘ、 ｙ≦１）光吸収層、６は高抵抗ＩｎＰ
窓層、ｅは電子、ｈは正孔、ｈνは光をそれぞれ示して
いる。
実施例の要部切断側面図
第１図
６：窓層 ５：光吸収層 に幕板第
２図
実施例の要部切断側面図
第３図
従来例の要部切断側面図
第４図FIG. 1 is a cross-sectional side view of essential parts of a first embodiment of the present invention, and FIG. 2 is a diagram showing energy consumption in the embodiment shown in FIG.
FIG. 3 is a band diagram showing a cutaway side view of the main part of the second embodiment of the present invention, and FIG. 4 is a cutaway side view of the main part of the conventional example. In the figure, l is a semi-insulating inP substrate doped with Fe;
3 and 4 are electrodes made of an Au-Zn alloy, and 5 is a high-resistance In, Ga, -8ASII P+-y to which Fe is added and lattice matched to the semi-insulating InP substrate 1.
(0≦x, y≦1) light absorption layer, 6 is high resistance InP
In the window layer, e represents an electron, h represents a hole, and hν represents light. Cutaway side view of the main parts of the embodiment Fig. 1 Figure 6: Window layer 5: Light absorption layer and curtain plate Fig. 2 Cutaway side view of the main parts of the embodiment Fig. 3 Cutaway side view of the main parts of the conventional example Fig. 4
Claims (1)
＿ｙ（０≦ｘ、ｙ≦１）光吸収層と、 その上に形成され該光吸収層に於ける禁制帯幅よりも広
いそれを有する高抵抗の化合物半導体結晶からなる窓層
と を備えてなることを特徴とする半導体受光装置。[Claims] High resistance In_1_-_xGa_xAs_yP_1_-
_y (0≦x, y≦1) light absorption layer; and a window layer formed on the light absorption layer and made of a high-resistance compound semiconductor crystal having a forbidden band width wider than the forbidden band width of the light absorption layer. A semiconductor light receiving device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61136197A JPS62293786A (en) | 1986-06-13 | 1986-06-13 | Semiconductor photodetector device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61136197A JPS62293786A (en) | 1986-06-13 | 1986-06-13 | Semiconductor photodetector device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62293786A true JPS62293786A (en) | 1987-12-21 |
Family
ID=15169609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61136197A Pending JPS62293786A (en) | 1986-06-13 | 1986-06-13 | Semiconductor photodetector device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62293786A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02100379A (en) * | 1988-10-07 | 1990-04-12 | Hikari Keisoku Gijutsu Kaihatsu Kk | Photo-detector |
| US4999695A (en) * | 1988-08-05 | 1991-03-12 | Mitsubishi Denki Kabushiki Kaisha | MSM type semiconductor light responsive element |
| US5115294A (en) * | 1989-06-29 | 1992-05-19 | At&T Bell Laboratories | Optoelectronic integrated circuit |
-
1986
- 1986-06-13 JP JP61136197A patent/JPS62293786A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4999695A (en) * | 1988-08-05 | 1991-03-12 | Mitsubishi Denki Kabushiki Kaisha | MSM type semiconductor light responsive element |
| JPH02100379A (en) * | 1988-10-07 | 1990-04-12 | Hikari Keisoku Gijutsu Kaihatsu Kk | Photo-detector |
| US5115294A (en) * | 1989-06-29 | 1992-05-19 | At&T Bell Laboratories | Optoelectronic integrated circuit |
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