JPS62293206A - Formation of optical element - Google Patents
Formation of optical elementInfo
- Publication number
- JPS62293206A JPS62293206A JP61136498A JP13649886A JPS62293206A JP S62293206 A JPS62293206 A JP S62293206A JP 61136498 A JP61136498 A JP 61136498A JP 13649886 A JP13649886 A JP 13649886A JP S62293206 A JPS62293206 A JP S62293206A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- substrate
- forming
- optical element
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 42
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 25
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- 229940005657 pyrophosphoric acid Drugs 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 239000002253 acid Substances 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 23
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 10
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 abstract description 6
- 229910003327 LiNbO3 Inorganic materials 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 16
- 239000005711 Benzoic acid Substances 0.000 description 8
- 235000010233 benzoic acid Nutrition 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 241000209094 Oryza Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- -1 pyrophosphoric acid Chemical compound 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はコヒーレント光を使用する光情報処理分野ある
いは光通信、光応用計測制御分野に使用される光導波路
およびマイクロレンズなどに用いる光素子形成方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for forming optical elements used in optical waveguides and microlenses used in the field of optical information processing using coherent light, optical communications, and optical applied measurement and control fields. It is something.
従来の技術
従来、強誘電体であるＬ Ｉ ＮｂＯ３基板を１６０″
Ｃ〜２５０°Ｃ程度の安息香酸溶液中で熱処理を行いＬ
Ｉ ＮｂＯ５基板のＬｉ と安息香酸中のＨを交換さ
せ高屈折率層（最大屈折率差Δｎ ＝ ０．１３程度・
）を形成し光導波路としていた。「ジェー・エル・シャ
ツケル、シー・イー・ライス及びジェー・ジェー・ベセ
ルカ１プロトン イクスチェンジ フォーハイ−インデ
ックス ウニイブガイド力インＬ Ｉ ＮｂＯ３”
アブライドフィジクス レター、４１巻、７号６０７−
６０８頁（１９８２）（Ｔ 、Ｌ、Ｊａｃｋｅｌ、 Ｃ
，Ｅ 、Ｒｉｃｅ ａｎｄ Ｊ、Ｊ、Ｖｅｓｅｌｋａ。Conventional technology Conventionally, a ferroelectric L I NbO3 substrate was
Heat treatment is performed in a benzoic acid solution at a temperature of about
By exchanging Li in the I NbO5 substrate and H in benzoic acid, a high refractive index layer (maximum refractive index difference Δn = about 0.13
) was used as an optical waveguide. “J.L. Shatkel, C.E. Rice and J.J. Veselka 1 Proton Exchange For High-Index Unibu Guide Power In LI NbO3”
Abride Physics Letters, Volume 41, No. 7 607-
608 pages (1982) (T.L., Jackel, C.
, E., Rice and J., Veselka.
”Ｐｒｏｔｏｎ ｅｘｃｈａｎｇｅ ｆｏｒ ｈｉｇｈ
−ｉｎｄｅｘ ｗａｖｅｇｕｉｄｅｓｉｎ ＬｉＮｂＯ
３，” Ａｐｐｌ 、Ｐｈｙｓ 、Ｌｅｔ ｔ 、Ｖｏ
１４１ 、 Ａ ７ 。”Proton exchange for high
-index wave guides in LiNbO
3,” Appl, Phys, Let t, Vo
141, A7.
Ｐ Ｐ２Ｏ３−６０８（１９８２） ） Ｊ＠照。P2O3-608 (1982)) J@Teru.
以下光素子として光導波路を例にとりその形成方法につ
いて説明する。第２図に従来の溶液中でのプロトン交換
方法を用いた光導波路形成法の具体的構成図を示す。１
は強誘電体基板であるＬ ｉ ＮｂＯ３基板、４′はＡ
℃による保護マスク、６はフォトプロセスおよびエツチ
ングにより保護マスク４′上に形成されたスリットであ
る。上記保護マスク４′スリツト６が形成されたＬ １
Ｎｂｏ３基板１を安息香酸の溶液６′中に浸す。溶液６
′はヒータ７′により加熱されたビニ力１０を介して一
定温度２００°Ｃに保たれている。この溶液６′中でＬ
ｚＮｂＯ３基板１を６０分熱処理を行った後、メタノ
ールにより洗浄を行う。こうして安息香酸溶液６′中の
ＨとＬ ｘ ＮｂＯ５基板１中のＬｉが交換し高屈折率
層９が形成される。この高屈折率層９が厚み０．６μｍ
程度の光導波路となる。Hereinafter, a method for forming an optical waveguide will be described as an example of an optical element. FIG. 2 shows a specific configuration diagram of a method for forming an optical waveguide using a conventional proton exchange method in a solution. 1
is a ferroelectric substrate L i NbO3 substrate, 4' is A
℃ protection mask, 6 is a slit formed on the protection mask 4' by photo process and etching. L1 where the protective mask 4' slit 6 is formed
The Nbo3 substrate 1 is immersed in a solution 6' of benzoic acid. Solution 6
' is maintained at a constant temperature of 200°C via a vinyl power 10 heated by a heater 7'. In this solution 6', L
After heat-treating the zNbO3 substrate 1 for 60 minutes, it is cleaned with methanol. In this way, H in the benzoic acid solution 6' and Li in the L x NbO5 substrate 1 are exchanged to form a high refractive index layer 9. This high refractive index layer 9 has a thickness of 0.6 μm.
It becomes an optical waveguide of about
発明が解決しようとする問題点
このような溶液中での光素子の形成方法は以下に示すよ
うな問題点を有していた。Problems to be Solved by the Invention This method of forming an optical element in a solution has the following problems.
（１） Ｏ，ａμｍ以下の短波長領域において光損傷
を生じる。(1) Optical damage occurs in the short wavelength region of O, a μm or less.
（２）安息香酸をビーカ中に入れ攪拌されるため溶液中
に不純物が溶は込みＬｉＮｂＯ３中に入り光損傷がさら
に助長される。(2) Since benzoic acid is placed in a beaker and stirred, impurities dissolve into the solution and enter LiNbO3, further promoting optical damage.
問題点を解決するだめの手段
本発明は上記問題点を解消するもので、光素子の形成方
法に新たな工夫を加えることにより光損傷を大幅に低減
させたものである。すなわち本発明の光素子の形成方法
は、Ｌ Ｉ ＮｂＸＴ ａ（１−ｘ ）Ｏ３（０≦ｘ≦
１）基板を５００°Ｃ以上の温度で外拡散を行う工程と
、前記基板の表面に融点が９０°Ｃ以下である液状の酸
を塗布した後、前記基板を１００°Ｃ以上の温度で熱処
理する工程とを施すものである。Means for Solving the Problems The present invention solves the above-mentioned problems and significantly reduces optical damage by adding new ideas to the method of forming optical elements. That is, the method for forming an optical element of the present invention is as follows: L I NbXT a (1-x ) O3 (0≦x≦
1) A process of externally diffusing the substrate at a temperature of 500°C or higher, and after applying a liquid acid with a melting point of 90°C or lower to the surface of the substrate, heat treating the substrate at a temperature of 100°C or higher. The process of
作 用
本発明は上記手段により溶液中への不純物の溶は込みを
防止するという効果とともに、外拡散によりさらに光損
傷に強い光素子の形成を可能とする。Function The present invention not only has the effect of preventing impurities from dissolving into the solution by the above-mentioned means, but also makes it possible to form an optical element that is more resistant to optical damage due to external diffusion.
実施例
本発明の光素子の形成方法の第１の実施例を第１図に示
す。この第１の実施例では光素子の形成方法としてＬ
Ｉ ＮｂＣ）ａ基板上にピロ燐酸（Ｈ４Ｐ２Ｏ７）を塗
布し光導波路を形成する方決について説明する。第１図
（、）で１は＋２板（＋Ｚ軸に垂直に切り出された基板
）であるＬｉＮｂＯ３基板、ＺはＬｉＮｂ０３Ｌ Ｉ
ＮｋｙＣ）３基板１を熱処理を行った結果、表面のＬ
１２０が外拡散されて形成されたもので厚み７０μｍ程
度となっている。また４はＴａによる保護マスク、６は
フォトプロセスおよびリフトオフにより保護マスク４に
形成されたスリットである。同図＜ｂ）において純度９
５％のピロ燐酸６をスピンナーを用いて塗布を行った。Embodiment A first embodiment of the method for forming an optical device according to the present invention is shown in FIG. In this first embodiment, the method for forming the optical element is L.
A method of forming an optical waveguide by coating pyrophosphoric acid (H4P2O7) on an I NbC)a substrate will be explained. In Figure 1 (,), 1 is a LiNbO3 substrate which is a +2 plate (a substrate cut perpendicular to the +Z axis), and Z is a LiNb03L I
As a result of heat treatment of NkyC) 3 substrate 1, the surface L
120 is diffused out and has a thickness of about 70 μm. Further, 4 is a protective mask made of Ta, and 6 is a slit formed in the protective mask 4 by photo process and lift-off. Purity 9 in the same figure <b)
5% pyrophosphoric acid 6 was applied using a spinner.
具体的には回転数３００ ｒｐｍで２０秒スピンコード
を行った。Specifically, a spin code was performed for 20 seconds at a rotation speed of 300 rpm.
次に同図（Ｃ）のように２００°Ｃに加熱されたオーブ
ン７中で６０分間熱処理を行った。８は温度の均一化を
図るためのＡ２プレートである。最後にＡｌ１．プレー
ト８ごとオープン７より取り出し冷却６・＼−７゛
を行った後、水酸化ナトリウム系の溶液でＴａによる保
護マスク４を除去したのが同図（ｄ）である。Next, heat treatment was performed for 60 minutes in an oven 7 heated to 200° C., as shown in FIG. 3(C). 8 is an A2 plate for making the temperature uniform. Finally, Al1. The plate 8 was taken out from the open 7 and cooled 6.\-7', and then the protective mask 4 made of Ta was removed using a sodium hydroxide solution, as shown in FIG. 4(d).
スリット６の直下にプロトン交換により高屈折率層９が
形成された。この高屈折率層９の厚みは０．６μｍであ
り波長１．３μｍ以下の光が導波可能な光導波路となる
。Ｈｅ−Ｎｅレーザ光（波長０．６３３μｍ）を導波さ
せたところ１０ｍＷでも光損傷が生じなかった。このよ
うに外拡散層２を形成することにより光損傷のしきい値
が１桁以上アップし短波用光導波路として非常に有効で
あることがわかる。またピロ燐酸処理により形成した高
屈折率層９のＬｉＮｂＯ３基板１との最大屈折率差は０
．１４５ と安息香酸の溶液処理に比べ１０％以上高く
洸φ閉ｂＭの大きな光導波路の形成が可能となる。また
ピロ燐酸６は安息香酸などに比べ極端に蒸発量が少いこ
とおよび一度の光素子作製に使用する量が１ｃｏ以下と
非常に少いことなどのため安全面および溶液の交換など
の保守の面を考えた場合、作業性が飛躍的に向上する。A high refractive index layer 9 was formed directly under the slit 6 by proton exchange. This high refractive index layer 9 has a thickness of 0.6 μm and serves as an optical waveguide capable of guiding light with a wavelength of 1.3 μm or less. When a He-Ne laser beam (wavelength: 0.633 μm) was guided, no optical damage occurred even at 10 mW. It can be seen that by forming the outer diffusion layer 2 in this way, the optical damage threshold increases by more than one order of magnitude, making it very effective as a short wave optical waveguide. Furthermore, the maximum refractive index difference between the high refractive index layer 9 formed by pyrophosphoric acid treatment and the LiNbO3 substrate 1 is 0.
．． 145 and benzoic acid solution treatment, it is possible to form an optical waveguide with a large radius φ closed bM, which is 10% higher than that of solution treatment using 145 and benzoic acid. In addition, pyrophosphoric acid 6 has an extremely small amount of evaporation compared to benzoic acid, etc., and the amount used for one photonic device fabrication is very small, less than 1 co, so it requires safety and maintenance such as solution replacement. When considering this aspect, work efficiency is dramatically improved.
またＴａはピロ燐酸などの燐酸系でエツチングされない
上パターン形成も簡単に行え保護マスクとして有効であ
ると思われる。Further, Ta can be easily formed into an upper pattern that is not etched using a phosphoric acid such as pyrophosphoric acid, and is considered to be effective as a protective mask.
なお実施例では２００°Ｃで熱処理を行ったが１００°
Ｃ〜３００”Ｃ程度の温度範囲で熱処理が可能である。In addition, in the example, heat treatment was performed at 200°C, but at 100°C.
Heat treatment is possible in a temperature range of approximately 300"C to 300"C.
また９０″Ｃ以上での塗布は基板の割れなどを生じ易い
。また＋Ｚ板を用いて光素子の形成を行ったが−Ｚ板な
どでも、他のＸ、Ｙ板等に比べ化学損傷が無く良質の光
素子の形成が可能である。また外拡散は５００″Ｃ以」
二の温度で行うのが量産性、制御性の点で良い。Also, coating at temperatures above 90"C tends to cause cracks in the substrate.Also, +Z plates were used to form optical elements, but even -Z plates do not cause chemical damage compared to other X and Y plates. It is possible to form high-quality optical elements. Also, the external diffusion temperature is 500"C or higher."
It is better to carry out the process at the second temperature in terms of mass production and controllability.
発明の効果
以」二のように本発明の光素子の形成方法によれば、外
拡散後９０″Ｃ以下で液状である酸を強誘電体基板の表
面に塗布し熱処理することにより簡単に制御性良く光損
傷に強い光素子の形成が可能となる。さらに熱処理にお
ける不純物混入を防ぐことも可能となる。Effects of the Invention According to the method for forming an optical device of the present invention, as described in Section 2, the process can be easily controlled by coating the surface of the ferroelectric substrate with an acid that is liquid at 90"C or less after external diffusion and heat-treating it. It becomes possible to form an optical element with good properties and resistance to optical damage.Furthermore, it becomes possible to prevent impurities from being mixed in during heat treatment.
第１図は本発明の一実施例における光素子の形成方法の
工程断面図、第２図は従来の光素子の形成方法を説明す
る構成図である。
１・・・・・・ＬｉＮｂＯ３基板、２・・・・・外拡散
層、４・・・・・・保護マスク、６・・・・・・ピロ燐
酸、９・・・・・・高屈折率層。FIG. 1 is a process cross-sectional view of a method for forming an optical element according to an embodiment of the present invention, and FIG. 2 is a block diagram illustrating a conventional method for forming an optical element. 1...LiNbO3 substrate, 2...Outer diffusion layer, 4...Protective mask, 6...Pyrophosphoric acid, 9...High refractive index layer.
Claims (4)
０≦ｘ≦１）基板を５００℃以上の温度で外拡散を行う
工程と、前記 ＬｉＮｂ＿ｘＴａ＿（＿１＿−＿ｘ＿）Ｏ＿３（０≦ｘ
≦１）基板の表面に融点が９０℃以下である液状の酸を
塗布した後、前記ＬｉＮｂ＿ｘＴａ＿（＿１＿−＿ｘ＿
）Ｏ＿３（０≦ｘ≦１）基板を１００℃以上の温度で熱
処理する工程を含んでなる光素子の形成方法。(1) LiNb_xTa_(_1_-_x_)O_3(
0≦x≦1) a step of externally diffusing the substrate at a temperature of 500° C. or higher;
≦1) After coating the surface of the substrate with a liquid acid having a melting point of 90°C or less, the LiNb_xTa_(_1_−_x_
) O_3 (0≦x≦1) A method for forming an optical device, comprising a step of heat-treating a substrate at a temperature of 100° C. or higher.
０≦ｘ≦１）基板が＋Ｚ板または−Ｚ板である特許請求
の範囲第（１）項記載の光素子の形成方法。(2) LiNb_xTa_(_1_-_x_)O_3(
0≦x≦1) The method for forming an optical element according to claim (1), wherein the substrate is a +Z plate or a -Z plate.
酸を用いたことを特徴とする特許請求の範囲第（１）項
記載の光素子の形成方法。(3) A method for forming an optical element according to claim (1), characterized in that an acid whose main component is pyrophosphoric acid (H_4P_2O_7) is used.
０≦ｘ≦１）基板の表面にＴａによる保護マスクパター
ンが形成されている特許請求の範囲第（１）項記載の光
素子の形成方法。(4) LiNb_xTa_(_1_-_x_)O_3(
0≦x≦1) The method for forming an optical device according to claim (1), wherein a protective mask pattern made of Ta is formed on the surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61136498A JPH0731287B2 (en) | 1986-06-12 | 1986-06-12 | Method of forming optical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61136498A JPH0731287B2 (en) | 1986-06-12 | 1986-06-12 | Method of forming optical element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62293206A true JPS62293206A (en) | 1987-12-19 |
| JPH0731287B2 JPH0731287B2 (en) | 1995-04-10 |
Family
ID=15176571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61136498A Expired - Fee Related JPH0731287B2 (en) | 1986-06-12 | 1986-06-12 | Method of forming optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0731287B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0635735A1 (en) * | 1993-07-21 | 1995-01-25 | Litton Systems, Inc. | Electro-optic waveguides and phase modulators and methods for making them |
| CN104852271A (en) * | 2015-05-29 | 2015-08-19 | 南京信息工程大学 | Preparation method of waveguide laser |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3750129B2 (en) * | 1998-03-18 | 2006-03-01 | 株式会社アテックス | Electric vehicle control device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607403A (en) * | 1983-06-28 | 1985-01-16 | Canon Inc | Forming method of thin film type optical waveguide |
| JPS60133405A (en) * | 1983-12-22 | 1985-07-16 | Canon Inc | Formation of pattern |
| JPS6170541A (en) * | 1984-09-14 | 1986-04-11 | Canon Inc | Thin film type optical element and its manufacture |
-
1986
- 1986-06-12 JP JP61136498A patent/JPH0731287B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607403A (en) * | 1983-06-28 | 1985-01-16 | Canon Inc | Forming method of thin film type optical waveguide |
| JPS60133405A (en) * | 1983-12-22 | 1985-07-16 | Canon Inc | Formation of pattern |
| JPS6170541A (en) * | 1984-09-14 | 1986-04-11 | Canon Inc | Thin film type optical element and its manufacture |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0635735A1 (en) * | 1993-07-21 | 1995-01-25 | Litton Systems, Inc. | Electro-optic waveguides and phase modulators and methods for making them |
| CN104852271A (en) * | 2015-05-29 | 2015-08-19 | 南京信息工程大学 | Preparation method of waveguide laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0731287B2 (en) | 1995-04-10 |
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