JPS62291024A - Polysilicon growth method - Google Patents
Polysilicon growth methodInfo
- Publication number
- JPS62291024A JPS62291024A JP13529386A JP13529386A JPS62291024A JP S62291024 A JPS62291024 A JP S62291024A JP 13529386 A JP13529386 A JP 13529386A JP 13529386 A JP13529386 A JP 13529386A JP S62291024 A JPS62291024 A JP S62291024A
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- wafer
- polysilicon growth
- growth
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 42
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011261 inert gas Substances 0.000 abstract description 2
- 230000002950 deficient Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体集積回路の製造方法に関し、特にＭＯ
Ｓ トランジスタのゲートや配線材料、バイポーラトラ
ンジスタのエミッタや抵抗体として広く使われているポ
リシリコンの成長力法に関する０
〔従来の技術〕
従来のポリシリコン成長力法は、半導体ウェハーを洗浄
した俊、ポリシリコン成長装置内に入れ、そのままポリ
シリコン成長温度まで上昇させてから８ｉＨ４などの原
料ガスを流して、ポリシリコンを成長させていた。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor integrated circuit, and in particular to a method for manufacturing a semiconductor integrated circuit.
S Regarding the growth force method of polysilicon, which is widely used as gate and wiring materials of transistors, emitters of bipolar transistors, and resistors 0 [Conventional technology] The conventional polysilicon growth force method uses a semiconductor wafer that has been cleaned, It was placed in a polysilicon growth apparatus, raised to the polysilicon growth temperature, and then supplied with a source gas such as 8iH4 to grow polysilicon.
上述した従来のポリシリコン成長力法では、一般的なウ
ェハー洗浄力法であるＮＨ４０ＨＨｚ Ｏｘ系溶液によ
る洗浄をした後、ポリシリコン成長を行うと、ポリシリ
コン粒子の異常成長などにより、ポリシリコン膜の白濁
化や抵抗不良などがおこるなどの欠点がある。In the conventional polysilicon growth method described above, if polysilicon is grown after cleaning with an NH40Hz Ox-based solution, which is a general wafer cleaning method, the polysilicon film may be damaged due to abnormal growth of polysilicon particles. It has drawbacks such as clouding and poor resistance.
上述した従来のポリシリコン成長力法では、牛傳体つェ
・・−を洗堕した抜、ポリシリコン成長装置内に入れ、
その″１″＆ポリシリコン成長温度まで上昇させてから
、ＳｉＨ４ガスなどのポリシリコン成長用原料ガスを流
して、ポリシリコンを成長させていた。これに対し、本
発明では、半導体ウェハーを洗伊後、ポリシリコン成長
装置内に入れて、ポリシリコン成長温度で、ポリシリコ
ン成長用原料ガスを流す前に、ポリシリコン成長温度以
上のウェハー・ベーク・プロセスが導入されているとこ
ろに独創的な内容を有する。In the conventional polysilicon growth method described above, a washed specimen is placed in a polysilicon growth apparatus, and
After raising the temperature to ``1'' and the polysilicon growth temperature, polysilicon was grown by flowing a raw material gas for polysilicon growth such as SiH4 gas. In contrast, in the present invention, after washing the semiconductor wafer, it is placed in a polysilicon growth apparatus, and the wafer is baked at a temperature higher than the polysilicon growth temperature before flowing the raw material gas for polysilicon growth.・It has original content where the process is introduced.
ウェハー・ベーク・プロセスの具体的な内容は、ウェハ
ーを６８０°Ｃ以上の温度で１０分以上ベークし、その
際のガス雰囲気はＨ，もしくはＮ！の他、Ｈｅ、Ａｒ
などの不活性ガスを用いるポリシリコン成長力法であ
る。The specific content of the wafer baking process is that the wafer is baked at a temperature of 680°C or higher for 10 minutes or more, and the gas atmosphere at that time is H or N! In addition to He, Ar
This is a polysilicon growth force method using an inert gas such as.
本発明のポリシリコン成長力法は、半導体ウェハーをポ
リシリコン成長装置内に入れた後、ポリシリコン成長温
度で８ｉＨ４などのポリクリコン成長原料ガスを流す前
に、６８０℃以上の温度で、１０分以上ベークするポリ
シリコン成長プロセスを有している。In the polysilicon growth force method of the present invention, after a semiconductor wafer is placed in a polysilicon growth apparatus, the process is performed at a temperature of 680°C or higher for 10 minutes or more before flowing a polysilicon growth raw material gas such as 8iH4 at a polysilicon growth temperature. It has a baking polysilicon growth process.
次に、本発明について図面を奈照して説明する〇第２図
は、本発明の一実施例のポリシリコン成長力法を示した
ものである。第１図の従来のポリシリコン成長力法に比
して、本発明ではポリシリコン成長装置内で、ポリノリ
コノ成長用原料ガスを流す前に６８０℃以上の温度で１
０分以上のウェハー・ベーク・プロセスが導入されてい
る。Next, the present invention will be explained with reference to the drawings. Figure 2 shows a polysilicon growth force method according to an embodiment of the present invention. Compared to the conventional polysilicon growth force method shown in FIG.
Wafer bake processes of 0 minutes or more have been introduced.
以上説明したように、本発明では、半導体ウェハーをポ
リシリコン成長装置内に入れた後、ポリシリコン成長温
度でポリシリコン成長用原料ガスを流す前に、６８０°
０以上のｔｍ凝で、１０分以上ベークするプロセスを有
していることより、ウェハー外観で、白濁がなく抵抗不
良のないポリシリコン膜を成長できる効果がある。As explained above, in the present invention, after a semiconductor wafer is placed in a polysilicon growth apparatus and before flowing a raw material gas for polysilicon growth at a polysilicon growth temperature,
Since the method includes a process of baking for 10 minutes or more with a tm density of 0 or more, it is possible to grow a polysilicon film with no cloudy appearance on the wafer and no resistance defects.
第１図に従来のポリ７リコ／成長力法による「温度−プ
ロセス時間」図を示す。これに対し、第２図に、本発明
のポリシリコン成長力法による「温度−プロセス時間」
図を示す。
図の説明
１１．２１・・・・・・温度安定化プロセス、１２゜２
２・・・・・・ポリシリコン成長プロセス、２３・・・
・・・ウェハー・ベーク・プロセス。
７’ｌｌゼス時間
箭１図
プロセス時間
箔２０ Ｉｆ、 ２’Ｌ−堰戻り定グ北ス／２．ど
？−−−−ポリシリコ男べ長ブＵゼス乙−七伝ハーＡ′
−クプＵセスFIG. 1 shows a "temperature-process time" diagram based on the conventional poly7 lyco/growth force method. In contrast, FIG. 2 shows "temperature-process time" according to the polysilicon growth force method of the present invention.
Show the diagram. Figure description 11.21...Temperature stabilization process, 12°2
2...Polysilicon growth process, 23...
...Wafer bake process. 7'll zes time arrow 1 figure process time foil 20 If, 2'L-Weir return setting g north/2. degree? -----Polysilico Otokobechobu Uzesu Otsu-Shichiden Ha A'
- Cup U Seth
Claims (1)
０℃の温度でポリシリコン成長を行う際、ウェハーをポ
リシリコン成長装置内に入れてから、ポリシリコン成長
を開始する間に、ウェハーを６８０℃以上の温度で１０
分以上ベークするプロセスを有することを特徴とするポ
リシリコン成長方法。600-67 using SiH_4 on the semiconductor wafer surface
When performing polysilicon growth at a temperature of 0°C, the wafer is heated at a temperature of 680°C or higher for 10 minutes between placing the wafer in the polysilicon growth equipment and starting polysilicon growth.
A method for growing polysilicon, comprising a process of baking for more than 1 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13529386A JPS62291024A (en) | 1986-06-10 | 1986-06-10 | Polysilicon growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13529386A JPS62291024A (en) | 1986-06-10 | 1986-06-10 | Polysilicon growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62291024A true JPS62291024A (en) | 1987-12-17 |
Family
ID=15148311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13529386A Pending JPS62291024A (en) | 1986-06-10 | 1986-06-10 | Polysilicon growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62291024A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04234112A (en) * | 1990-09-04 | 1992-08-21 | Motorola Inc | Polysilicon selective deposition method |
-
1986
- 1986-06-10 JP JP13529386A patent/JPS62291024A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04234112A (en) * | 1990-09-04 | 1992-08-21 | Motorola Inc | Polysilicon selective deposition method |
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