JPS62290885A - 反応性イオンエツチング装置 - Google Patents

反応性イオンエツチング装置

Info

Publication number
JPS62290885A
JPS62290885A JP13460486A JP13460486A JPS62290885A JP S62290885 A JPS62290885 A JP S62290885A JP 13460486 A JP13460486 A JP 13460486A JP 13460486 A JP13460486 A JP 13460486A JP S62290885 A JPS62290885 A JP S62290885A
Authority
JP
Japan
Prior art keywords
gas
reactive ion
chamber
etching
plural
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13460486A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6345468B2 (enExample
Inventor
Katsuhiro Hasegawa
功宏 長谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP13460486A priority Critical patent/JPS62290885A/ja
Publication of JPS62290885A publication Critical patent/JPS62290885A/ja
Publication of JPS6345468B2 publication Critical patent/JPS6345468B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
JP13460486A 1986-06-10 1986-06-10 反応性イオンエツチング装置 Granted JPS62290885A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13460486A JPS62290885A (ja) 1986-06-10 1986-06-10 反応性イオンエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13460486A JPS62290885A (ja) 1986-06-10 1986-06-10 反応性イオンエツチング装置

Publications (2)

Publication Number Publication Date
JPS62290885A true JPS62290885A (ja) 1987-12-17
JPS6345468B2 JPS6345468B2 (enExample) 1988-09-09

Family

ID=15132284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13460486A Granted JPS62290885A (ja) 1986-06-10 1986-06-10 反応性イオンエツチング装置

Country Status (1)

Country Link
JP (1) JPS62290885A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0617267A (ja) * 1992-03-23 1994-01-25 Hughes Aircraft Co プラズマ補助化学エッチングにおける可変空間周波数制御方法および装置
US5532190A (en) * 1994-05-26 1996-07-02 U.S. Philips Corporation Plasma treatment method in electronic device manufacture
US7137354B2 (en) 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7303982B2 (en) 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7320734B2 (en) 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US7700465B2 (en) 2002-06-05 2010-04-20 Applied Materials, Inc. Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage
US7713756B2 (en) 2003-08-05 2010-05-11 Hitachi High-Technologies Corporation Apparatus and method for plasma etching
US7887669B2 (en) 2006-11-10 2011-02-15 Hitachi High-Technologies Corporation Vacuum processing apparatus

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0617267A (ja) * 1992-03-23 1994-01-25 Hughes Aircraft Co プラズマ補助化学エッチングにおける可変空間周波数制御方法および装置
US5532190A (en) * 1994-05-26 1996-07-02 U.S. Philips Corporation Plasma treatment method in electronic device manufacture
US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7137354B2 (en) 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7303982B2 (en) 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7320734B2 (en) 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7393765B2 (en) 2002-06-05 2008-07-01 Applied Materials, Inc. Low temperature CVD process with selected stress of the CVD layer on CMOS devices
US7700465B2 (en) 2002-06-05 2010-04-20 Applied Materials, Inc. Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage
US7713756B2 (en) 2003-08-05 2010-05-11 Hitachi High-Technologies Corporation Apparatus and method for plasma etching
US8083889B2 (en) 2003-08-05 2011-12-27 Hitachi High-Technologies Corporation Apparatus and method for plasma etching
US7887669B2 (en) 2006-11-10 2011-02-15 Hitachi High-Technologies Corporation Vacuum processing apparatus

Also Published As

Publication number Publication date
JPS6345468B2 (enExample) 1988-09-09

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term