JPS62290864A - Vacuum deposition device - Google Patents
Vacuum deposition deviceInfo
- Publication number
- JPS62290864A JPS62290864A JP13387486A JP13387486A JPS62290864A JP S62290864 A JPS62290864 A JP S62290864A JP 13387486 A JP13387486 A JP 13387486A JP 13387486 A JP13387486 A JP 13387486A JP S62290864 A JPS62290864 A JP S62290864A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- top end
- induction coil
- molten part
- deposition material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001771 vacuum deposition Methods 0.000 title description 3
- 239000000463 material Substances 0.000 claims abstract description 61
- 238000007740 vapor deposition Methods 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 230000006698 induction Effects 0.000 claims abstract description 16
- 238000001704 evaporation Methods 0.000 abstract description 13
- 230000008020 evaporation Effects 0.000 abstract description 13
- 239000010409 thin film Substances 0.000 abstract description 9
- 239000010408 film Substances 0.000 abstract description 5
- 230000008018 melting Effects 0.000 abstract description 5
- 238000002844 melting Methods 0.000 abstract description 5
- 239000000155 melt Substances 0.000 abstract description 3
- 238000007738 vacuum evaporation Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 241000885593 Geisha Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
（産業上の利用分野）
本発明は、真空蒸着装置に係り、特に、金属薄膜の形成
のための蒸着材料の加熱方法に関するものである。Detailed Description of the Invention 3. Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a vacuum evaporation apparatus, and particularly to a method of heating evaporation material for forming a metal thin film.
（従来の技術）
従来、金属薄膜を形成する方法としては、（１）ＣＶＤ
（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐ
ｏｓｉｔｉｏｎ） ／１： 、 （２） スパ
ッタリング法、（３）真空蒸着法等が挙げられる。(Prior art) Conventionally, methods for forming metal thin films include (1) CVD.
(Chemical Vapor Dep.
(2) sputtering method, (3) vacuum evaporation method, etc.
以下、これらの方法について説明する。These methods will be explained below.
上記（１）のＣＶＤ法について機運すると、ソースガス
として気化した金属の有機化合物を容器中へ導入し、そ
の容器中に設置された母体を加熱する。When the CVD method described in (1) above is used, a vaporized metal organic compound is introduced into a container as a source gas, and a base body placed in the container is heated.
すると、ソースガスは母体表面上で熱分解され、その内
の金属が母体表面に付着し、薄膜が形成される。Then, the source gas is thermally decomposed on the surface of the base, and the metal in it adheres to the surface of the base, forming a thin film.
次に、上記（２）のスパッタリング法について機運する
と、第３図に示されるように、真空容器１中において直
流高電圧の電源９から供給される電界と、これに直交す
る磁界を磁界発生ｒＡ２から供給する。一方、真空容器
１中にＡｒガス３を導入すると、Ａｒプラズマ４が発生
する。このプラズマがターゲット５表面のスパッタリン
グ材料６をスパツクし、これがターゲットと対向して設
置された電極７上の被蒸着材料８の表面に付着すること
により薄膜が形成される。Next, regarding the sputtering method (2) above, as shown in FIG. Supplied from. On the other hand, when Ar gas 3 is introduced into the vacuum container 1, Ar plasma 4 is generated. This plasma spatters the sputtering material 6 on the surface of the target 5, which adheres to the surface of the material to be deposited 8 on the electrode 7 placed opposite the target, thereby forming a thin film.
次に、上記（３）の真空蒸着法について機運すると、第
４図に示されるように、真空容器ＩＯ内の真空中におい
て、高圧電源１７が供給される電子銃１１から発生する
電子ビーム１２により、るつぼ１３内の１着材料１４を
加熱し、これを蒸発源とする。そして、蒸発した金属は
蒸発源に対向して設置された被蒸着材料１５表面に付着
し、薄膜を形成するものである。なお、上記電子銃にか
えて、抵抗加熱によってもよい、また、るつぼ１３は冷
却水１６によって冷却される。Next, regarding the vacuum evaporation method described in (3) above, as shown in FIG. , the first material 14 in the crucible 13 is heated and used as an evaporation source. Then, the evaporated metal adheres to the surface of the material to be evaporated 15 placed opposite the evaporation source, forming a thin film. Note that, instead of the electron gun, resistance heating may be used, and the crucible 13 is cooled by cooling water 16.
（発明が解決しようとする問題点）
しかし、上記（１）の方法では不純物が薄膜中に残留し
、上記（２）の方法においてもＡｒガス中に含まれる不
撓ガス成分が膜質に影響を及ばず。また、上記（３）の
方法における材料を加熱蒸発させるための抵抗加熱では
、加熱ボート材料より高融点の芸者材料及びボート材料
と反応する蒸着材ｒＩを用いることはできない。また、
るつぼ中の材料を電子ビーム照射により加熱する場合に
は、上記のような問題はある程度解決されているものの
るつぼ材料からの不純物の混入は避けることはできない
。(Problems to be Solved by the Invention) However, in the method (1) above, impurities remain in the thin film, and in the method (2) above, the inflexible gas component contained in the Ar gas may affect the film quality. figure. Furthermore, in the resistance heating for heating and vaporizing the material in method (3) above, it is not possible to use the Geisha material, which has a higher melting point than the heating boat material, and the vapor deposition material rI, which reacts with the boat material. Also,
When the material in the crucible is heated by electron beam irradiation, although the above problems have been solved to some extent, the contamination of impurities from the crucible material cannot be avoided.
更に、電子ビームによる加熱ではシリコン等を蒸着しよ
うとする場合、材ね融液の突沸かしばしば発生し、安定
な蒸着が難しいという問題があった。Furthermore, when heating with an electron beam is used to deposit silicon or the like, there is a problem in that bumping of the molten material often occurs, making stable deposition difficult.
また、るつぼは冷却せねばならず、真空容器内に冷却用
の配管の設置が必要で構造が？、１ｆ雑になる等の問題
があった。Also, the crucible must be cooled, and cooling piping must be installed inside the vacuum container, making the structure difficult. , there were problems such as the 1f becoming rough.
本発明は、上記問題点を除去し、薄膜材料選択の自由度
が高く、形成薄膜の純度が良好であり、蒸着速度が優れ
た、しかも構造の単純な真空蒸着装置を提供することを
目的とする。An object of the present invention is to eliminate the above-mentioned problems and provide a vacuum evaporation apparatus with a simple structure, which has a high degree of freedom in selecting thin film materials, has good purity in the formed thin film, and has an excellent evaporation rate. do.
（問題点を解決するための手段）
本発明は、上記問題点を解決するために、真空蒸着装置
において、誘電加熱が可能であり、棒状に加工した蒸着
材料を鉛直に設置し、その上端の周囲に誘導加熱するた
めの誘導コイルを設け、円柱状の蒸着材料の上端を消費
するに従って上昇させ、その高さを一定に保つ毅横を設
けるようにしたものである。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides a vacuum evaporation apparatus in which dielectric heating is possible, a evaporation material processed into a rod shape is installed vertically, and the upper end of the evaporation material is installed vertically. An induction coil for induction heating is provided around the cylindrical evaporation material, the upper end of the cylindrical vapor deposition material is raised as it is consumed, and a support plate is provided to keep the height constant.
（作用）
本発明によれば、真空蒸着装置において、誘電加熱が可
能であり、棒状に加工した蒸着材料を鉛直に設置し、そ
の上端の周囲に誘導加熱するための誘導コイルを設け、
円柱状の蒸着材料の上端を消費するに従って上昇させ、
その高さを一定に保つ機構を設けるようにしたので、草
着腹への不純物の混入が防止でき、かつ任意の融点の蒸
着材料を選択できる。また、大きく、かつ、安定な蒸着
速度が得られ、しかも、蒸着材！１の補充間隔を長くす
ることができる。(Function) According to the present invention, in a vacuum evaporation apparatus, dielectric heating is possible, a evaporation material processed into a rod shape is installed vertically, and an induction coil for induction heating is provided around the upper end of the evaporation material.
The upper end of the cylindrical vapor deposition material is raised as it is consumed,
Since a mechanism is provided to keep the height constant, it is possible to prevent impurities from entering the weed pad and to select a vapor deposition material having an arbitrary melting point. In addition, a large and stable vapor deposition rate can be obtained, and what's more, it is a vapor deposition material! 1 replenishment interval can be lengthened.
（実施例）
以下、本発明の実施例について図面を参照しながら詳細
に説明する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図は本発明の一実施例を示す真空蒸着装置の全体構
成図、第２図は第１図の部分拡大断面図である。FIG. 1 is an overall configuration diagram of a vacuum evaporation apparatus showing an embodiment of the present invention, and FIG. 2 is a partially enlarged sectional view of FIG. 1.
２０は真空容器、２１は蒸着材料、２２は上下移動機構
、２３は保持具、２４は誘導コイル、２５は高周波電源
、２６はレーザ発振器、２７は受光器、２８はモータ、
２９は被蒸着材料、３０は受光器からの出力信号を受り
てモータを駆動する駆動回路、３１はレーザ発振器の電
源である。20 is a vacuum container, 21 is a vapor deposition material, 22 is a vertical movement mechanism, 23 is a holder, 24 is an induction coil, 25 is a high frequency power source, 26 is a laser oscillator, 27 is a light receiver, 28 is a motor,
29 is a material to be deposited; 30 is a drive circuit that receives an output signal from a light receiver to drive a motor; and 31 is a power source for a laser oscillator.
まず、高真空に排気されている真空容器２０中に円柱状
に加工された、充電加熱が可能な物質からなる蒸着材＃
４２１が上下移動を可能とした上下移動機構２２を備え
る保持具２３により鉛直に設置されている。この上下移
動機構２２は蒸発により消費される蒸着材料２１の上面
高さを常に一定に保つためのものである。誘導コイル２
４は蒸着材料２１の上端周囲に接触することなく巻かれ
ており、これは高周波電源２５に接続されて高周波誘導
加熱が可能となっている。First, a vapor deposition material # made of a material that can be charged and heated is processed into a cylindrical shape in a vacuum container 20 that is evacuated to a high vacuum.
421 is installed vertically by a holder 23 equipped with a vertical movement mechanism 22 that allows vertical movement. This vertical movement mechanism 22 is for keeping the height of the top surface of the vapor deposition material 21 consumed by evaporation constant at all times. induction coil 2
4 is wound around the upper end of the vapor deposition material 21 without contacting it, and is connected to a high frequency power source 25 to enable high frequency induction heating.
そこで、誘導コイル２４に高周波電流を流すと、蒸着材
料２１には誘Ｒ電流が流れ、これにより材料の上部が加
熱される。この時、蒸着材料の電気１氏抗と形状、誘導
コイル２４との間隔、高周波電流の大きさを最適に選択
すると、第２図に示されるように、蒸着材料２１の非蒸
着部分２１ｂの上端部だけが溶融し、溶融部分２１ｂが
得られる。そして、この７８融部分２１ｂは材料自身の
表面張力により、融液がこぼれることなく円柱状の蒸着
材料２１の上部に保持される。従って、融液がるつぼ等
に接触することなく高純度の茎：４膜が得られるだけで
なく、広い蒸発面を得ることができるので、大きな７着
速度が得られる。また、加熱機構が材料と高周波コイル
だけであるので装置の大幅な簡素化が可能である。Therefore, when a high frequency current is passed through the induction coil 24, an induced R current flows through the vapor deposition material 21, thereby heating the upper part of the material. At this time, if the electrical resistance and shape of the vapor deposition material, the distance from the induction coil 24, and the magnitude of the high-frequency current are optimally selected, the upper end of the non-evaporated portion 21b of the vapor deposition material 21 will appear as shown in FIG. Only that part is melted, and a melted part 21b is obtained. This 78 melted portion 21b is held on top of the columnar vapor deposition material 21 without the melt spilling due to the surface tension of the material itself. Therefore, not only can a highly purified stalk 4 film be obtained without the melt coming into contact with a crucible, etc., but also a wide evaporation surface can be obtained, resulting in a high deposition rate. Furthermore, since the heating mechanism consists only of the material and the high-frequency coil, the device can be significantly simplified.
蒸着材料２１の高さはレーザ発振器２６と受光器２７の
組み合わせによる検出器を用いて検知し、モータ２８で
上下移動機構２２の移動制御を行うと精密な調整が可能
である。蒸発した材料原子は上方に設置された被蒸着材
料２９に付着し、３膜が形成される。また、第２図に示
されるように、長い形状に加工された蒸着材料を用いる
ことで、蒸着材料の補充間隔を長くできるという効果も
奏することができる。The height of the vapor-deposited material 21 is detected using a detector consisting of a combination of a laser oscillator 26 and a light receiver 27, and precise adjustment is possible by controlling the movement of the vertical movement mechanism 22 with a motor 28. The evaporated material atoms adhere to the vapor-deposited material 29 placed above, and three films are formed. Further, as shown in FIG. 2, by using a vapor deposition material processed into a long shape, it is possible to have the effect that the replenishment interval of the vapor deposition material can be lengthened.
なお、本発明は上記実施例に限定されるものではなく、
本発明の趣旨に基づいて種々の変形が可能であり、これ
らを本発明の範囲から排除するものではない。Note that the present invention is not limited to the above embodiments,
Various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
（発明の効果）
以上、詳細に説明したように、本発明によれば、誘電加
熱が可能な物質からなる蒸着材料を円柱状に加工し、そ
の蒸着材料の上端部の周囲に誘導加熱用コイルを設けて
、その上端部を溶融し、かつ、その蒸着材料の上端の高
さを一定に保つ手段を設けるようにしたので、
（１）蒸着膜への不純物の混入を防止することができる
。(Effects of the Invention) As described above in detail, according to the present invention, a vapor deposition material made of a substance capable of dielectric heating is processed into a cylindrical shape, and an induction heating coil is placed around the upper end of the vapor deposition material. By providing a means for melting the upper end of the vapor deposition material and keeping the height of the upper end of the vapor deposition material constant, (1) it is possible to prevent impurities from entering the vapor deposition film;
（２）任意の融点の蒸着材料を選択して、使用すること
ができる。(2) A vapor deposition material having an arbitrary melting point can be selected and used.
（３）蒸着速度が速く、しかも安定な蒸着を行うことが
できる。(3) The vapor deposition rate is high and stable vapor deposition can be performed.
（４）蒸着材料の補充間隔を長（するできる。(4) The replenishment interval of vapor deposition material can be lengthened.
という効果が得られる。This effect can be obtained.
第１図は本発明の実施例を示す真空蒸着装置の全体構成
図、第２図はその部分拡大断面図、第３図は従来のスバ
フタの説明図、第４図は従来の真空蒸着の説明図である
。
２０・・・真空容器、２１・・・蒸着材料、２２・・・
上下移動機構、２３・・・保持具、２４・・・誘導コイ
ル、２５・・・高周波電源、２６・・・レーザ発振器、
２７・・・受光器、２８・・・モータ２９・・・被蒸着
材料。３０・・・駆動回路、３１・・・高周波電源。Fig. 1 is an overall configuration diagram of a vacuum evaporation apparatus showing an embodiment of the present invention, Fig. 2 is a partially enlarged sectional view thereof, Fig. 3 is an explanatory diagram of a conventional baffle filter, and Fig. 4 is an explanation of a conventional vacuum evaporation apparatus. It is a diagram. 20... Vacuum container, 21... Evaporation material, 22...
Vertical movement mechanism, 23... Holder, 24... Induction coil, 25... High frequency power supply, 26... Laser oscillator,
27... Light receiver, 28... Motor 29... Material to be deposited. 30... Drive circuit, 31... High frequency power supply.
Claims (1)
鉛直に設置される蒸着材料と、 （ｂ）該蒸着材料の上端の周囲に配設される誘導コイル
と、 （ｃ）該誘導コイルの高さを一定に保つ手段とを具備す
ることを特徴とする真空蒸着装置。[Claims] (a) A vapor deposition material that is capable of dielectric heating, processed into a cylindrical shape, and installed vertically; (b) An induction coil disposed around the upper end of the vapor deposition material. (c) means for keeping the height of the induction coil constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13387486A JPS62290864A (en) | 1986-06-11 | 1986-06-11 | Vacuum deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13387486A JPS62290864A (en) | 1986-06-11 | 1986-06-11 | Vacuum deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62290864A true JPS62290864A (en) | 1987-12-17 |
Family
ID=15115089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13387486A Pending JPS62290864A (en) | 1986-06-11 | 1986-06-11 | Vacuum deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62290864A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007073235A (en) * | 2005-09-05 | 2007-03-22 | Osaka Univ | Evaporation source and method of supplying steam outside |
-
1986
- 1986-06-11 JP JP13387486A patent/JPS62290864A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007073235A (en) * | 2005-09-05 | 2007-03-22 | Osaka Univ | Evaporation source and method of supplying steam outside |
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