JPS62284074A - Continuous sputtering device - Google Patents

Continuous sputtering device

Info

Publication number
JPS62284074A
JPS62284074A JP29283185A JP29283185A JPS62284074A JP S62284074 A JPS62284074 A JP S62284074A JP 29283185 A JP29283185 A JP 29283185A JP 29283185 A JP29283185 A JP 29283185A JP S62284074 A JPS62284074 A JP S62284074A
Authority
JP
Japan
Prior art keywords
tray
target
sputtered particles
vacuum chamber
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29283185A
Other languages
Japanese (ja)
Inventor
Shigeru Watanuki
茂 綿貫
Masao Yoshida
雅夫 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ARUBATSUKU SEIMAKU KK
Ulvac Seimaku KK
Original Assignee
ARUBATSUKU SEIMAKU KK
Ulvac Seimaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ARUBATSUKU SEIMAKU KK, Ulvac Seimaku KK filed Critical ARUBATSUKU SEIMAKU KK
Priority to JP29283185A priority Critical patent/JPS62284074A/en
Publication of JPS62284074A publication Critical patent/JPS62284074A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To inhibit sputtering particles from being deposited on the wall or the like in a vacuum tank and to eliminate the need of control for removing a film in the tank and to enhance productibity by trapping the sputtering particles which are passed through the vicinity of a tray and straightly advanced to the fixed part of the vacuum tank. CONSTITUTION:The undesirable deposition and film formation of sputtering particles on the fixed part such as the upper wall 4a of a vacuum tank 4, the side walls 4c thereof and rollers 5 are inhibited by providing a means for trapping the sputtering particles with are generated in a target 3 and passed through the vicinity of a tray 1 and straightly advanced toward the above-mentioned fixed part. Further the above-mentioned means preferably is a lengthened part 1b overlapped with adjacent trays 1 or a shielding plate 1a between the rollers 5 and the target 3 and furthermore the lengthened leg part 1c of the tray 1.

Description

【発明の詳細な説明】 3発明の詳細な説明 〔産業上の利用分野〕 本発明は連続スパッタリング装置に関するものである。[Detailed description of the invention] 3 Detailed explanation of the invention [Industrial application field] The present invention relates to a continuous sputtering device.

〔従来の技術〕[Conventional technology]

連続スパッタリング装置はトンネル状の真空槽内を基板
を載せた多数のトレイを進行させ、槽内適宜の箇所に設
置したターゲットから発生したスパッタ粒子を上記トレ
イ上の基板に堆積させ、所定の厚さの膜を形成するもの
である。
Continuous sputtering equipment advances a number of trays carrying substrates through a tunnel-shaped vacuum chamber, and deposits sputtered particles generated from targets placed at appropriate locations in the chamber onto the substrates on the trays to a predetermined thickness. It forms a film of

従来の連続スパッタリング装置は1例えば第弘図a、b
に示すように、真空槽すが上下壁および側壁4La、4
’b、 4/−cVcよってトンネル状に形成され、基
板2に載せた多数のトレイlが側壁≠Cに取り付けられ
たローラよにより連続的に矢印方向に搬送されている。
Conventional continuous sputtering equipment is shown in Fig. 1, for example, Figures a and b.
As shown in FIG.
'b, 4/-cVc, it is formed into a tunnel shape, and a large number of trays 1 placed on the substrate 2 are continuously conveyed in the direction of the arrow by rollers attached to the side wall≠C.

下壁弘す上にはターゲット3が設置され、スノぞツタ粒
子を発生してこれを搬送されてきた多数のトレイl上の
基板2に堆積させ、膜を形成(成膜)する。
A target 3 is installed on the lower wall, and generates ivy particles and deposits them on the substrates 2 on the many trays 1 that have been transported to form a film.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記のような装置において、トレイ上の基板にはスパッ
タ粒子が堆積し、所定の厚さの膜が形成されるが、槽内
の上下および側壁や、ローラにも長期間スパッタ粒子が
堆積し、とくに土壁は隣接するトレイの隙間からスノに
ツタ粒子が直接到達することができ、またローラはスパ
ッタ粒子発生源であるターゲットとほぼ同じ高さでかつ
その近傍にあるため、これらの部分には直進してきたス
パッタ粒子がとくに多く堆積し、膜の厚さが真空槽の他
の部分より一層厚くなる傾向がある。
In the above-mentioned apparatus, sputtered particles are deposited on the substrate on the tray to form a film of a predetermined thickness, but the sputtered particles are also deposited on the top and bottom and side walls of the tank and on the rollers for a long period of time. In particular, on clay walls, ivy particles can directly reach the slats through gaps between adjacent trays, and the rollers are located at approximately the same height and close to the target, which is the source of spatter particles, so Particularly large amounts of sputtered particles traveling straight tend to accumulate, and the film tends to be thicker than in other parts of the vacuum chamber.

ところで、この形成され比換は、それがどのような組成
のものであっても、厚さが厚くなると内部因力を発生し
、組成に対して一定の膜厚以上になると剥離するように
なる。この剥離した膜は真空槽にサミとして存在するた
め、これが真空槽内に浮遊して被成膜基板上に付着する
と、製品にピンホール等の欠陥を生ずる。
By the way, no matter what the composition of this formed film, as it gets thicker it generates an internal force, and when the film thickness exceeds a certain level for the composition, it begins to peel off. . This peeled film is present in the vacuum chamber as a scrap, and if it floats in the vacuum chamber and adheres to the substrate on which the film is to be formed, it will cause defects such as pinholes in the product.

そこで、ス・ぞツタリング装置の真空槽はこのゴミおよ
びローラ、壁等に形成された膜を除去するため、しばし
ば運転を止めて内部を清掃し、部品を交換する必要が生
ずる。
Therefore, in order to remove this dust and the film formed on the rollers, walls, etc., the vacuum chamber of the skidding device often needs to be shut down to clean the inside and replace parts.

本発明はトレイの近傍を通り真空槽の固定部分に向かっ
て直進しようとするスパッタ粒子を捕捉することによっ
て、真空槽の壁、ローラ等の部分にスパッタ粒子が堆積
することを抑制したスパッタリング装置を提供すること
を目的としている。
The present invention provides a sputtering device that suppresses the accumulation of sputtered particles on the walls, rollers, etc. of the vacuum chamber by capturing the sputtered particles that pass through the vicinity of the tray and try to go straight toward the fixed part of the vacuum chamber. is intended to provide.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、上記問題点ケ解決する手段として。 The present invention is a means to solve the above problems.

トンネル状に形成された真空槽内を、基板を載せた多数
のトレイが連続的に搬送され、槽内適宜の箇所に設置さ
れたターゲットから発生したスノぞツタ粒子を基板上に
堆積、成膜する連続スパッタリング装置において、トレ
イが、その近傍を通り真空槽内の固定部分に向かって直
進しようとするスパッタ粒子を捕捉する手段を備えたこ
とを特徴とする連続スパッタリング装置を提供するもの
である。
A large number of trays carrying substrates are continuously transported through a tunnel-shaped vacuum chamber, and the particles generated from targets placed at appropriate locations in the chamber are deposited on the substrates to form a film. The present invention provides a continuous sputtering apparatus characterized in that the tray is equipped with a means for capturing sputtered particles passing through the vicinity of the tray and attempting to go straight toward a fixed part in a vacuum chamber.

〔作用〕[Effect]

本発明は、ターゲットで発生し、トレイの近傍を通り真
空槽の固定部分に向かって直進しようとするスパッタ粒
子ヲ、トレイの重なり合った端部。
In the present invention, sputtered particles generated at the target and attempting to pass through the vicinity of the tray and proceed straight toward the fixed part of the vacuum chamber are removed from the overlapping ends of the trays.

或いはトレイに設けた遮蔽板またはトレイの延長された
脚部等の捕捉手段によって捕捉することによ一層、スパ
ッタ粒子が壁またはローラに達するのを制限し、それら
の部分における好ましくないス、、17172粒子の堆
積、成膜を抑制する。
Alternatively, the sputter particles can be further restricted from reaching the walls or rollers by trapping them by a trapping means such as a shielding plate provided on the tray or an extended leg of the tray, and undesirable spatter particles in those parts can be further restricted. Suppresses particle deposition and film formation.

〔実施例〕〔Example〕

第1図a及び第1図すは本発明の一実施例を示し、装置
は、従来の真空装置と同様に上下壁および側壁+a、 
4Lb、 4Acに囲まれたトンネル状のもので左右の
側壁4Acにはローラ!が取り付けられ、その上に基板
ji載せたトレイlが両端の脚部/cによシ装置し、ロ
ーラ!によって搬送される。トレイlの下方には、下壁
l/−c上にターゲット3が設置され、発生したスパッ
タ粒子を基板上コ上に供給して所定の厚さに成膜するよ
うになっている。
FIG. 1a and FIG. 1A show an embodiment of the present invention, and the device has upper and lower walls, side walls +a,
It is a tunnel-like thing surrounded by 4Lb and 4Ac, and there are rollers on the left and right side walls 4Ac! is attached, and the tray l with the substrate ji placed on it is mounted on the legs /c at both ends, and the rollers are mounted! transported by. A target 3 is installed below the tray 1 on the lower wall 1/-c, and the generated sputter particles are supplied onto the substrate to form a film to a predetermined thickness.

ターゲット3から隣接するトレイの隙間を通り上壁に向
かって直進しようとするスパッタ粒子を上壁l/−aに
到達する前に捕捉するため、隣接するトレイlの端部に
互いに重なり合う部分/bが設けられるとともに、ター
ゲット3からトレイの下側に沿いローラ!に向かって直
進しようとするスパッタ粒子をローラjに到達する前に
捕捉するため、トレイlはその両端脚部lcとターゲッ
ト3の間に(ローラjとターゲット3とはほぼ同じ高さ
にある)スカート(遮蔽板)/ai垂下している。さら
に、ターゲット3およびトレイlはそれらの間の距離を
一定に保ったまま、下壁弘すから高い位置に設置され、
下壁弘すに到達するスパッタ粒子を少なくするようにな
っている(ターゲット30下壁弘すからの高さHは10
0.以上とするのが好ましい)。
In order to capture sputtered particles that are about to go straight from the target 3 toward the upper wall through the gap between the adjacent trays before reaching the upper wall l/-a, there is a portion /b at the end of the adjacent tray l that overlaps with each other. A roller is provided along the bottom of the tray from target 3! In order to capture the sputtered particles that are about to go straight towards the target before they reach the roller j, the tray l is placed between its both end legs lc and the target 3 (roller j and the target 3 are at approximately the same height). Skirt (shielding plate)/ai is hanging down. Further, the target 3 and the tray I are installed at a high position from the lower wall while keeping the distance between them constant.
The sputtered particles reaching the lower wall are reduced (the height H of the target 30 from the lower wall is 10
0. or more).

第2図は別の実施例を示し、真空楢弘は上下および側壁
ta、弘す、弘Cで囲まれたトンネル状のもので、側壁
Fcにはローラjが取シ付けられ。
FIG. 2 shows another embodiment, in which the vacuum tunnel is in the form of a tunnel surrounded by upper and lower walls and side walls ta, ridge, and ridge C, and a roller j is attached to the side wall Fc.

その上を基板λを載せたトレイ/が搬送される。A tray/with a substrate λ placed thereon is transported.

ローラjは真空槽φの下方に設けられたモータ6から、
ベルト伝動装置7を介して駆動される。
The roller j is driven by a motor 6 installed below the vacuum chamber φ.
It is driven via a belt transmission 7.

トレイlの下方には、下壁弘す上にターゲット3が設置
され、発生したス・ξツタ粒子を基板λ上に供給する。
A target 3 is installed below the tray 1 on the lower wall, and supplies the generated ivy particles onto the substrate λ.

この実施例においては、第1図の実施例とは異なってト
レイ10脚部/cは下方に延長され、これに対応してロ
ーラ!は真空槽の側壁4tcの下部に取り付けられてい
る。そこで、ローラjはターゲット3に直接対向しない
ので、ターゲット3からローツタに向かって直進しよう
とするスパッタ粒子はトレイ10脚部/cに衝突して捕
捉され。
In this embodiment, unlike the embodiment of FIG. 1, the tray 10 legs/c are extended downwardly, and the rollers correspondingly extend downwardly. is attached to the lower part of the side wall 4tc of the vacuum chamber. Therefore, since the roller j does not directly face the target 3, the sputtered particles that try to go straight from the target 3 toward the rotor collide with the legs/c of the tray 10 and are captured.

ローラ!に到達することはない。roller! will never be reached.

第3図はさらに別の実施例を示し、第2図の水平搬送型
に対して、真空槽弘が傾斜して設置された斜め搬送型で
ある。そこで、モータ6からローラ!に回転を伝達する
ベルト伝動装置7.7rは一方の装置7′が長いベルト
ラ備えたものとなっている。
FIG. 3 shows yet another embodiment, which is an oblique transfer type in which the vacuum chamber is installed at an angle, as opposed to the horizontal transfer type shown in FIG. So, from motor 6 to roller! One of the belt transmission devices 7.7r for transmitting rotation to the belt is provided with a long belt tracker 7'.

この実施例においても、トレイlの脚部ICは下方に延
長されていて、ローラjはターゲット3に直接対向せず
、ローラに向かって直進しようとするスパッタ粒子はト
レイの脚部/Cに衝突して捕捉される。
In this embodiment as well, the leg part IC of the tray l is extended downward, the roller j does not directly oppose the target 3, and the sputtered particles trying to go straight toward the roller collide with the leg part C of the tray. captured.

なお、上記各実施例はターゲットな下壁に設けたいわゆ
る庇付はタイプであるが、ターゲット壁付はタイプのい
わゆる縦送り型あるいは上面取り付はタイプの横送り型
の場合に対しても、例えば遮蔽板の位置を変更するなど
して実施することができる。
In addition, each of the above embodiments is a so-called eaves attachment type provided on the lower wall of the target, but the target wall attachment type is a so-called vertical type, or the upper surface mounting is a horizontal type. For example, this can be implemented by changing the position of the shielding plate.

本発明の連続スパッタリング装置を用いて半導体に成膜
する場合、トンネル状に形成された真空槽内を、基板を
載せた多数のトレイがローラによシ連続的に搬送され、
基板にはターゲットから発生したスパッタ粒子が堆積、
成膜される。その際真空槽内の上下左右の壁へのスパッ
タ粒子の付着。
When forming a film on a semiconductor using the continuous sputtering apparatus of the present invention, a large number of trays carrying substrates are continuously conveyed by rollers through a tunnel-shaped vacuum chamber.
Sputtered particles generated from the target are deposited on the substrate.
A film is formed. At that time, sputtered particles adhere to the top, bottom, left and right walls of the vacuum chamber.

堆積が捕捉装置によって抑制され、スパッタ粒子の堆積
はその大部分が基板およびトレイ等の運動部分のみに生
じ、壁や固定部分にはほとんど生じない(運動部分に形
成された成膜は、外部に取シ出される度に除去すること
ができるので問題は々い)。
Deposition is suppressed by the trapping device, and most of the sputtered particles are deposited only on moving parts such as the substrate and tray, and almost never on walls and fixed parts (films formed on moving parts are not exposed to the outside). (This is a problem because it can be removed every time it is taken out.)

〔発明の効果〕〔Effect of the invention〕

本発明は、トレイが、その近傍を通り真空槽の固定部分
に向かって直進しようとするスノぞツタ粒子を捕捉する
手段を備えているため、ターゲットが見込む真空槽の固
定部分はすべて遮蔽されることになフ、それらの部分に
はほとんどスパッタ粒子の堆積が生じ々いので、従来必
要とされていた真空槽内の膜除去に関する保守管理は不
要となシ。
In the present invention, since the tray is equipped with a means for capturing snow ivy particles that try to pass straight toward the fixed part of the vacuum chamber through the tray, all the fixed parts of the vacuum chamber from which the target can be seen are shielded. In particular, since almost no sputtered particles are deposited in those areas, there is no need for maintenance related to film removal inside the vacuum chamber, which was required in the past.

連続スパッタリング装置本来の利点である清浄な高真空
維持が装置内部を大気に開放しないことにより達成でき
、生産性の向上と経費の節減に寄与するところが大きい
Maintaining a clean high vacuum, which is an inherent advantage of continuous sputtering equipment, can be achieved by not exposing the inside of the equipment to the atmosphere, which greatly contributes to improving productivity and reducing costs.

【図面の簡単な説明】[Brief explanation of drawings]

第1図a% b、cは本発明実施例の断面正面図装置の
断面正面図および断面側面図。 l・・・トレイ    /a・・−スカート(遮蔽板)
/b・・・延長部   /c・・・脚部コ・・・基板 
    3・・・ターゲットグ・・・真空装置   F
a・・・土壁≠b・・・下壁    ≠C・・・左右壁
!・・・ローラ    650.モータ7.7′・・・
ベルト伝動装置 手続補正口(麗) 昭和62年 6月24日
Fig. 1a, b and c are a sectional front view and a sectional side view of a sectional front view device according to an embodiment of the present invention. l...Tray /a...-Skirt (shielding plate)
/b... Extension part /c... Leg part... Board
3...Target...Vacuum device F
a... Earthen wall ≠ b... Lower wall ≠ C... Left and right walls! ...Roller 650. Motor 7.7'...
Belt transmission device procedure correction port (Rei) June 24, 1986

Claims (1)

【特許請求の範囲】 1、トンネル状に形成された真空槽内を、基板を載せた
多数のトレイが連続的に搬送され、槽内適宜の箇所に設
置されたターゲットから発生したスパッタ粒子を基板上
に堆積、成膜する連続スパッタリング装置において、前
記トレイが、その近傍を通り真空槽内の固定部分に向っ
て直進しようとするスパッタ粒子を捕捉する手段を備え
ていることを特徴とする連続スパッタリング装置。 2、前記スパッタ粒子を捕捉する手段は、隣接したトレ
イの端部同志を重ならしめたものである特許請求の範囲
第1項記載の連続スパッタリング装置。 3、前記スパッタ粒子を捕捉する手段が、ローラとター
ゲットの間の遮蔽板である特許請求の範囲第1項又は第
2項記載の連続スパッタリング装置。 4、前記スパッタ粒子を捕捉する手段が、トレイの延長
された脚部である特許請求の範囲第1項、又は第2項記
載の連続スパッタリング装置。
[Claims] 1. A large number of trays carrying substrates are continuously conveyed through a tunnel-shaped vacuum chamber, and sputtered particles generated from targets placed at appropriate locations within the chamber are transferred to the substrate. A continuous sputtering apparatus for depositing and forming a film on a vacuum chamber, characterized in that the tray is equipped with a means for capturing sputtered particles passing through the tray and attempting to proceed straight toward a fixed part in a vacuum chamber. Device. 2. The continuous sputtering apparatus according to claim 1, wherein the means for capturing the sputtered particles is formed by overlapping the ends of adjacent trays. 3. The continuous sputtering apparatus according to claim 1 or 2, wherein the means for capturing the sputtered particles is a shielding plate between the roller and the target. 4. The continuous sputtering apparatus according to claim 1 or 2, wherein the means for capturing the sputtered particles is an extended leg of a tray.
JP29283185A 1985-12-27 1985-12-27 Continuous sputtering device Pending JPS62284074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29283185A JPS62284074A (en) 1985-12-27 1985-12-27 Continuous sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29283185A JPS62284074A (en) 1985-12-27 1985-12-27 Continuous sputtering device

Publications (1)

Publication Number Publication Date
JPS62284074A true JPS62284074A (en) 1987-12-09

Family

ID=17786915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29283185A Pending JPS62284074A (en) 1985-12-27 1985-12-27 Continuous sputtering device

Country Status (1)

Country Link
JP (1) JPS62284074A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897172A (en) * 1987-03-26 1990-01-30 Kabushiki Kaisha Toshiba Sputtering chamber structure for high-frequency bias sputtering process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544579A (en) * 1978-09-26 1980-03-28 Mitsubishi Heavy Ind Ltd Continuous vacuum evaporation apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544579A (en) * 1978-09-26 1980-03-28 Mitsubishi Heavy Ind Ltd Continuous vacuum evaporation apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897172A (en) * 1987-03-26 1990-01-30 Kabushiki Kaisha Toshiba Sputtering chamber structure for high-frequency bias sputtering process

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