JPS62282413A - Porcelain compound for voltage nonlinear resistance unit - Google Patents
Porcelain compound for voltage nonlinear resistance unitInfo
- Publication number
- JPS62282413A JPS62282413A JP61126086A JP12608686A JPS62282413A JP S62282413 A JPS62282413 A JP S62282413A JP 61126086 A JP61126086 A JP 61126086A JP 12608686 A JP12608686 A JP 12608686A JP S62282413 A JPS62282413 A JP S62282413A
- Authority
- JP
- Japan
- Prior art keywords
- component
- parts
- varistor
- voltage
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052573 porcelain Inorganic materials 0.000 title description 5
- 150000001875 compounds Chemical class 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 235000019402 calcium peroxide Nutrition 0.000 description 3
- QDOXWKRWXJOMAK-UHFFFAOYSA-N chromium(III) oxide Inorganic materials O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 2
- 101100389125 Rattus norvegicus Egln3 gene Proteins 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 description 2
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- 229910005224 Ga2O Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910017509 Nd2 O3 Inorganic materials 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910002637 Pr6O11 Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910009442 Y2O Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- -1 and Bi 2O3 Chemical compound 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は電子機器に用いられるコンデンサとバリスタの
両機能を有する電圧非直線性抵抗体（容量性バリスタ）
磁器組成物に関する。[Detailed Description of the Invention] Industrial Application Field The present invention is a voltage nonlinear resistor (capacitive varistor) that is used in electronic equipment and has both the functions of a capacitor and a varistor.
Relating to a porcelain composition.
従来の技術
電子機器において、機器の内外部より伝播する異常電圧
やノイズ等によってトランジスタや集積回路等の半導体
の破壊や誤動作を防止するため、各種のコンデンサやバ
リスタ等が使用されているが、コンデンサやバリスタの
単品ではこれらノイズ、パルス、サージ等の吸収、除去
が不完全である。近年登場した電圧非直線性抵抗体すな
わち容量性バリスタは、コンデンサとバリスタの両機能
。Conventional technology In electronic devices, various capacitors and varistors are used to prevent semiconductors such as transistors and integrated circuits from being destroyed or malfunctioning due to abnormal voltages and noise propagated from inside and outside the device. A single varistor or varistor cannot fully absorb or remove these noises, pulses, surges, etc. Voltage nonlinear resistors, or capacitive varistors, that have appeared in recent years function as both capacitors and varistors.
を有するもので、ノイズ、パルス、サージ等の吸収、除
去又はバイパスとしての機能を単品で行うことができる
。It can function as a single item to absorb, remove, or bypass noise, pulses, surges, etc.
発明が解決しようとする問題点
しかし、従来のＳｒＴｉＯ３材に半導体化元素（Ｎｄｚ
０５゜Ｔａ２０５ 、 ＣａＯ２等）ならびに粒界に析
出する元素（Ｂｉ 、 Ｃｕ 、 Ｍｎ等）を添加し
て炸裂した容量性バリスタは、サージ耐量が１ｏ〜６０
Ａと小さいため、信頼性が乏しく、利用範囲も限定され
たものであった。また、電子機器の高性能、多機能化に
伴い、小型大容量でなおかつサージ耐量の大きな信頼性
の高い容量性バリスタが要求されている。Problems to be Solved by the Invention However, the conventional SrTiO3 material does not contain semiconductor elements (Ndz).
Capacitive varistors exploded by adding elements (Bi, Cu, Mn, etc.) that precipitate at the grain boundaries have a surge resistance of 1o to 60°.
Because of its small A, its reliability was poor and its range of use was limited. Further, as electronic devices become more sophisticated and multifunctional, there is a demand for highly reliable capacitive varistors that are small in size, have a large capacity, and have large surge resistance.
問題点を解決するための手段
本発明にかかわる磁器組成物は、ｓ ｒ（、−ｘ ）％
ＴｉＯ。Means for Solving the Problems The porcelain composition according to the present invention has s r(,-x )%
TiO.
（但しＸは０≦Ｘ≦０．６の範囲）（以下第１成分と呼
ぶ）１００モル部と、Ｎｂ２ｏ５．Ｔａ２０５゜ＷＯ，
、ＣａＯ２，Ｌａ２０． 、 Ｎｄ２Ｏ３，Ｙ２Ｏ，、
Ｓｍ２Ｏ３゜Ｄｙ２Ｏ３’ Ｇｄ２Ｏ３及びＰｒ６０．
、の内少なくとも１種の金属酸化物（以下第２成分と呼
ぶ） ｏ、ｏｏ ｓ〜３．００モル部と、ｃｒ２ｏ、
（以下第３成分と呼ぶ）ｏ、ｏ１〜２．００モル部と、
Ｂｉ２Ｏ３，ＣｕＯ、ＭｎＯ２゜Ｆｅ２Ｏ，、Ｃｏ２０
． 、 ＮｉＯ、ＺｎＯ、Ｌｉ２Ｏ、Ｎａ２Ｏ及びに２
０ の内少なくとも１種の酸化物（以下第４成分と呼
ぶ）０．０１〜２．００モル部と、人β２０３゜Ｂ Ｏ
、ＣａＯ２，Ｔｉｅ□、 ＺｒＯ２，ＳｎＯ□、 （ａ
ｏ 。(However, X is in the range of 0≦X≦0.6) (hereinafter referred to as the first component) 100 mole parts and Nb2o5. Ta205゜WO,
, CaO2, La20. , Nd2O3,Y2O,,
Sm2O3°Dy2O3' Gd2O3 and Pr60.
, at least one metal oxide (hereinafter referred to as the second component) o, oo s ~ 3.00 mol parts, cr2o,
(hereinafter referred to as the third component) o, o 1 to 2.00 mol parts,
Bi2O3, CuO, MnO2゜Fe2O,, Co20
．． , NiO, ZnO, Li2O, Na2O and Ni2
0.01 to 2.00 mole part of at least one oxide (hereinafter referred to as the fourth component) of
, CaO2, Tie□, ZrO2, SnO□, (a
o.
ＳｒＯ、ＢａＯ、ＰｂＯ、Ｇａ２Ｏ，、Ｉｎ２Ｏ３，Ｍ
ｇＯ及び５ｂ２０３ の内少なくとも１種の酸化物（
以下第６成分と呼ぶ）０．０１〜３．００モル部とを含
むものである。SrO, BaO, PbO, Ga2O,, In2O3, M
At least one oxide of gO and 5b203 (
(hereinafter referred to as the sixth component) from 0.01 to 3.00 mole parts.
作用
第１成分の内Ｃａはバリスタ電圧の非直線係数及びサー
ジ耐量を向上させるのに効果のある成分で、第２成分は
５ｒ（１，、ＣａＴｉ０． を原子価制御の原理によ
り半導体化させるのに必要な成分で、第３成分は、バリ
スタ特性に寄与する成分で、第４成分および第５成分は
サージ耐量、バリスタ電圧の非直線係数を改善するのに
効果のある成分である。Among the first components, Ca is effective in improving the nonlinear coefficient and surge resistance of the varistor voltage, and the second component is 5r(1, CaTi0. The third component is a component that contributes to the varistor characteristics, and the fourth and fifth components are components that are effective in improving the surge resistance and the nonlinear coefficient of the varistor voltage.
実施例 以下、実施例をあげて、本発明につき詳細に説明する。Example EXAMPLES Hereinafter, the present invention will be described in detail with reference to Examples.
実施例１
第１成分のＸが第１表の第１成分の欄のＸの値になるよ
うに、市販の工業用原料５ｒＣＯ，粉末（純度９９幅以
上） 、 ＣｈＣＯ，粉末（純度９９チ以上）及びＴｉ
Ｏ□粉末（純度９９幅以上）をそれぞれ秤量配合し、ボ
ールミルで２０時間混合した。これを乾燥した後、この
粉末を１１６０°Ｃの温度で２時間仮焼した。その後ボ
ールミルで湿式粉砕した。Example 1 Commercially available industrial raw materials 5rCO, powder (purity of 99 or more), ChCO, powder (purity of 99 or more) were used so that X of the first component would be the value of X in the first component column of Table 1. ) and Ti
O□ powder (purity 99 or higher) was weighed and blended, and mixed in a ball mill for 20 hours. After drying, this powder was calcined at a temperature of 1160°C for 2 hours. Thereafter, it was wet-pulverized using a ball mill.
このようにして得られた５ｒ（１，、ＣａｘＴｉ０．粉
末（第１成分）１００モル部に対して市販の試薬特級（
純度９９．９係以上） Ｎｂ ｚＯｓ ｒ Ｔ ＩＬ２
０ ｓ 、ＷＯｓ ＊Ｃｏｏ□、 Ｌａ２Ｏ３、Ｎｄ２
Ｏ３、Ｙ２Ｏ，、Ｓｍ２０． 、 Ｄｙ２０．。Commercially available reagent special grade (
Purity 99.9 or higher) Nb zOs r T IL2
0 s, WOs *Coo□, La2O3, Nd2
O3, Y2O,, Sm20. , Dy20. .
Ｇｄ２Ｏ，及びＰｒ６Ｏ１１の内少なくとも１種の金属
酸化物（第２成分）と、試薬特級（純度９９．９％以上
）Ｃｒ２０３（第３成分）と、Ｂｉ２Ｏ，、Ｃｕｂ。At least one metal oxide among Gd2O and Pr6O11 (second component), special reagent grade (purity 99.9% or higher) Cr203 (third component), and Bi2O, Cub.
ＭｎＯ、Ｆｅ２Ｏ，、Ｃｏ２Ｏ３，ＮｉＯ、ＺｎＯ、Ｌ
ｉ２Ｏ。MnO, Fe2O,, Co2O3, NiO, ZnO, L
i2O.
Ｎ！Ｌ２０及びに２０ の内少なくとも１種の酸化物
（第４成分）と、ム１２０． 、 Ｂ２０． 、 Ｃａ
Ｏ２，ＴｉＯ２゜ＺｒＯ、ＳｎＯ□、ＣａＯ、ＳｒＯ、
ＢａＯ、ＰｂＯ、Ｇａ２Ｏ３゜Ｉｎ２Ｏ，、ＭｇＯ及び
５ｂ２ｏ、 ｏ内少なくとも１種の酸化物（第５成分
）を第１表に示すように秤量配合しボールミルで２０時
時間式混合した。乾燥後、６重量係のポリビニールアル
コール水溶［Ｔｈバインダとして１０重量係添加混合し
、３２メツシユパスに造粒した。この造粒粉末を１ｏｏ
ｏｋｙ／ｉの圧力で円板形に成形した。N! at least one oxide (fourth component) among L20 and N20, and M120. , B20. , Ca
O2, TiO2゜ZrO, SnO□, CaO, SrO,
BaO, PbO, Ga2O3°In2O, MgO, and at least one oxide of 5b2o, o (fifth component) were weighed and blended as shown in Table 1 and mixed in a ball mill for 20 hours. After drying, a polyvinyl alcohol aqueous solution of 6 parts by weight [10 parts by weight as a Th binder] was added and mixed, and granulated into 32 mesh passes. 1 oo of this granulated powder
It was molded into a disk shape under a pressure of oky/i.
これらの成形体を空気中において１ｏ００°Ｃの温度で
加熱処理した後、 Ｎ２（９６容積幅）にＮ２（６容積
係）を加えた還元性雰囲気中で１４００’Ｃの温度で４
時間焼成し、直径約６ＩＪ＆。These molded bodies were heat treated in air at a temperature of 1000°C, and then heated at a temperature of 1400°C in a reducing atmosphere of N2 (96 volume width) plus N2 (6 volume parts).
Fired for an hour, diameter approximately 6IJ&.
厚さ約０．７ＴＩｓの半導体磁器を得た。次に、これを
空気中で１１６０′Ｃの温度で４時間熱処理した。A semiconductor porcelain with a thickness of about 0.7 TIs was obtained. Next, this was heat treated in air at a temperature of 1160'C for 4 hours.
次にこの磁器の両面にオーミックＡｇペーストを塗布し
、ａａｏ’ｃの温度で焼付けて容量性バリスタを得た。Next, ohmic Ag paste was applied to both sides of this porcelain and baked at a temperature of aao'c to obtain a capacitive varistor.
次に容量性バリスタの特性評価を行うために、静電容量
Ｃ０誘電正接ｔａｎδ、バリスタ電圧ｖ、。Next, in order to evaluate the characteristics of the capacitive varistor, the capacitance C0 dielectric loss tangent tan δ, the varistor voltage v,
非直線係数α、及びサージ耐量を測定し、第２表に示す
結果を得た。The nonlinear coefficient α and surge resistance were measured, and the results shown in Table 2 were obtained.
尚、ｃ 、 ｔａｎδは通常のブリ・フジ回路を用い２
０°Ｃ、Ｉ ＫＨｚで測定した。また、ｖｌ はバリス
タに１ｍムの電流を流した時の電圧を測定し、αはバリ
スタに１ｍＡ、１０ｍＡの電流を流した時の電圧ｖ１．
ｖ、ｏを測定し、次式より求めた。In addition, c and tan δ are 2 using the usual Buri-Fuji circuit.
Measurements were made at 0°C and I KHz. In addition, vl is the voltage measured when a current of 1 mm is passed through the varistor, and α is the voltage v1 when currents of 1 mA and 10 mA are passed through the varistor.
v and o were measured and calculated from the following formula.
α” １ ／ （ｌｏｇ （Ｌｏ／ Ｖ＋ ） ）また
、サージ耐量は、バリスタに電圧ｓＶ、時間２０μｓの
矩形波形のサージを加え、その後Ｖ。α” 1 / (log (Lo/V+)) Also, the surge resistance is determined by applying a rectangular waveform surge of voltage sV and time of 20 μs to the varistor, and then increasing the voltage to V.
を測定し初期値に対して１０憾変化した時の最大電流値
を測定した。was measured, and the maximum current value when the current value changed by 10 from the initial value was measured.
また、寿命試験は、次に示す条件で式中負荷寿命試験を
１０００時間行い、コンデンサ特性とノくリスタ特性を
前述の方法で測定した。Further, in the life test, a load life test in the formula was performed for 1000 hours under the conditions shown below, and the capacitor characteristics and the nozzle characteristics were measured by the method described above.
湿雰囲気中負荷寿命試験条件は温度６６±２°Ｃ１相対
湿度９０〜９６幅の恒温恒湿槽にて直流電圧２ｏＶ連続
印加である。The load life test conditions in a humid atmosphere were continuous application of a DC voltage of 2 oV in a constant temperature and humidity chamber with a temperature of 66±2° C. and a relative humidity range of 90 to 96.
（以下金 白）
試料番号１は、第４成分、第５成分の添加効果を調べる
ための比較試料で、第４成分、第６成分を添加すること
により、バリスタ電圧の非直線係数とサージ耐量が改善
されている事がわかる。試料番号１０，２２．４９は第
６成分の成分量が０．０１モル部未満で、特性改善の効
果がなく、試料番号５，１７．４４はその成分量が３．
００モル部を超え、サージ耐量が６０Ａ以下、ｔａｎδ
が３チ以上となり、寿命試験後の△ｖ１が１０Ｌ４以上
、Δｔａｎδが３０％以上あるので本発明の範囲外とし
た。(hereinafter referred to as gold and white) Sample number 1 is a comparison sample to investigate the effect of adding the fourth and fifth components.By adding the fourth and sixth components, the nonlinear coefficient of the varistor voltage and the surge resistance It can be seen that this has been improved. Sample Nos. 10 and 22.49 have an amount of the sixth component of less than 0.01 mole part and have no property improvement effect, and Sample Nos. 5 and 17.44 have an amount of the sixth component of less than 0.01 mole part.
00 mole part, surge resistance is 60 A or less, tan δ
was 3 inches or more, Δv1 after the life test was 10L4 or more, and Δtan δ was 30% or more, so it was determined to be outside the scope of the present invention.
尚、本発明での実施例では、第４成分として金属酸化物
を使用したが、最終的に金属酸化物が得られれば本発明
の目的が達成されるので、第４成分として金属元素、炭
酸塩、水酸化物、硝酸塩。In the examples of the present invention, a metal oxide was used as the fourth component, but since the purpose of the present invention is achieved if a metal oxide is finally obtained, metal elements and carbonic acid are used as the fourth component. salts, hydroxides, nitrates.
シュウ酸塩を用いてもさしつかえない。It is also possible to use oxalate.
発明の効果
以上のように本発明の電圧非直線性抵抗体磁器組成物は
、Ｓｒ（、−ｘ）ＣａｘＴｉＯｓ （但しＸは０≦Ｘ≦
０６６の範囲）が１００モル部とＩｔ）２０５． Ｔｌ
＆２０５ 。Effects of the Invention As described above, the voltage nonlinear resistor ceramic composition of the present invention has Sr(,-x)CaxTiOs (where X is 0≦X≦
066 range) is 100 mole parts and It)205. Tl
&205.
ＷＯ３、ＣａＯ２、Ｌａ２Ｏ３、Ｎｄ２Ｏ３、Ｙ２Ｏ５
、Ｓｍ２０．。WO3, CaO2, La2O3, Nd2O3, Y2O5
, Sm20. .
ＤＹ２０ｓ 、 Ｇｄ２Ｏ３及びＰｒ６０．、 （７）
内少くとも１種ノ金属酸化物を０．００６〜３．００モ
ル部と、Ｃｒ２Ｏ３が０．０１〜２．００モル部とＢｉ
２Ｏ３、ＣｕＯ、ＭｎＯ２゜Ｆｅｄ、 、 Ｃｏ２０．
、 ＮｉＯ、ＺｎＯ、Ｌｉ□Ｏ、Ｎａ２Ｏ及びに２０
の内少くとも１種の酸化物０．０１〜２．Ｏ。DY20s, Gd2O3 and Pr60. , (7)
0.006 to 3.00 mole parts of at least one metal oxide, 0.01 to 2.00 mole parts of Cr2O3, and Bi
2O3, CuO, MnO2°Fed, , Co20.
, NiO, ZnO, Li□O, Na2O and Ni20
At least one oxide of 0.01 to 2. O.
モル部トＡｇｚＯｓ 、 Ｂ２Ｏ３，（ｓｅｏ□、 Ｔ
ｉＯ２，ＺｒＯ□。Mol part AgzOs, B2O3, (seo□, T
iO2, ZrO□.
５ｎ０２ 、 ＣａＯ、ＳｒＯ、ＢａＯ、ＰｂＯ、Ｇａ
２Ｏ３゜Ｉｎ２Ｏ５、ＭｎＯ及び５ｂ２０５ｔｙ）内少
くとも１種の酸化物０．０１〜３．００モル部を含むた
め、信頼性が高く静電容量が大きくなる。5n02, CaO, SrO, BaO, PbO, Ga
Since it contains 0.01 to 3.00 mole parts of at least one oxide among 2O3゜In2O5, MnO, and 5b205ty), it has high reliability and a large capacitance.
Claims (1)
ｘは０≦ｘ≦０．５の範囲）が１００モル部と、Ｎｂ＿
２Ｏ＿５、Ｔａ＿２Ｏ＿５、ＷＯ＿３、ＣｅＯ＿２、Ｌ
ａ＿２Ｏ＿３、Ｎｄ＿２Ｏ＿３、Ｙ＿２Ｏ＿３、Ｓｍ＿
２Ｏ＿３、Ｄｙ＿２Ｏ＿３、Ｇｄ＿２Ｏ＿３及びＰｒ＿
６Ｏ＿１＿１の内少なくとも１種の金属酸化物を０．０
０５〜３．００モル部と、Ｃｒ＿２Ｏ＿３が０．０１〜
２．００モル部と、Ｂｉ＿２Ｏ＿３、ＣｕＯ、ＭｎＯ＿
２、Ｆｅ＿２Ｏ＿３、Ｃｏ＿２Ｏ＿３、ＮｉＯ、ＺｎＯ
、Ｌｉ＿２Ｏ、Ｎａ＿２Ｏ及びＫ＿２Ｏの内少なくとも
１種の酸化物０．０１〜２．００モル部と、Ａｌ＿２Ｏ
＿３、Ｂ＿２Ｏ＿３、ＧｅＯ＿２、ＴｉＯ＿２、ＺｒＯ
＿２、ＳｎＯ＿２、ＣａＯ、ＳｒＯ、ＢａＯ、ＰｂＯ、
Ｇａ＿２Ｏ＿３、Ｉｎ＿２Ｏ＿３、ＭｇＯ及びＳｂ＿２
Ｏ＿３の内少なくとも１種の酸化物０．０１〜３．００
モル部とを含む電圧非直線性抵抗体磁器組成物。100 mol parts of Sr_(_1_-_x_)Ca_xTiO_3 (where x is in the range of 0≦x≦0.5) and Nb_
2O_5, Ta_2O_5, WO_3, CeO_2, L
a_2O_3, Nd_2O_3, Y_2O_3, Sm_
2O_3, Dy_2O_3, Gd_2O_3 and Pr_
0.0 of at least one metal oxide of 6O_1_1
05 to 3.00 mole parts and 0.01 to 0.01 to Cr_2O_3
2.00 mole parts, Bi_2O_3, CuO, MnO_
2, Fe_2O_3, Co_2O_3, NiO, ZnO
, 0.01 to 2.00 mol parts of at least one oxide of Li_2O, Na_2O and K_2O, and Al_2O
_3, B_2O_3, GeO_2, TiO_2, ZrO
_2, SnO_2, CaO, SrO, BaO, PbO,
Ga_2O_3, In_2O_3, MgO and Sb_2
At least one oxide of O_3 0.01 to 3.00
Voltage nonlinear resistor ceramic composition comprising molar parts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61126086A JPS62282413A (en) | 1986-05-30 | 1986-05-30 | Porcelain compound for voltage nonlinear resistance unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61126086A JPS62282413A (en) | 1986-05-30 | 1986-05-30 | Porcelain compound for voltage nonlinear resistance unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62282413A true JPS62282413A (en) | 1987-12-08 |
Family
ID=14926257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61126086A Pending JPS62282413A (en) | 1986-05-30 | 1986-05-30 | Porcelain compound for voltage nonlinear resistance unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62282413A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0249404A (en) * | 1988-08-11 | 1990-02-19 | Murata Mfg Co Ltd | Composite functional element |
| JPH02106904A (en) * | 1988-10-17 | 1990-04-19 | Murata Mfg Co Ltd | Complex function element |
| JPH0329208A (en) * | 1989-03-15 | 1991-02-07 | Matsushita Electric Ind Co Ltd | Dielectric ceramic composition |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5735303A (en) * | 1980-07-30 | 1982-02-25 | Taiyo Yuden Kk | Voltage vs current characteristic nonlinear semiconductor porcelain composition and method of producing same |
| JPS57187906A (en) * | 1981-05-14 | 1982-11-18 | Taiyo Yuden Kk | Semiconductor porcelain composition with nonlinear voltage/current characteristic and method of producing same |
| JPS60107803A (en) * | 1983-11-17 | 1985-06-13 | 松下電器産業株式会社 | Voltage dependent nonlinear resistor porcelain composition |
| JPS60107804A (en) * | 1983-11-17 | 1985-06-13 | 松下電器産業株式会社 | Voltage dependent nonlinear resistor porcelain composition |
| JPS6153160A (en) * | 1984-08-18 | 1986-03-17 | 松下電器産業株式会社 | Voltage depending non-linear resistor ceramic composition |
| JPS625612A (en) * | 1985-07-02 | 1987-01-12 | 松下電器産業株式会社 | Voltage depending non-linear resistor ceramic composition |
| JPS62179103A (en) * | 1986-01-31 | 1987-08-06 | 松下電器産業株式会社 | Voltage-dependant nonlinear resistance porcelain compound |
-
1986
- 1986-05-30 JP JP61126086A patent/JPS62282413A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5735303A (en) * | 1980-07-30 | 1982-02-25 | Taiyo Yuden Kk | Voltage vs current characteristic nonlinear semiconductor porcelain composition and method of producing same |
| JPS57187906A (en) * | 1981-05-14 | 1982-11-18 | Taiyo Yuden Kk | Semiconductor porcelain composition with nonlinear voltage/current characteristic and method of producing same |
| JPS60107803A (en) * | 1983-11-17 | 1985-06-13 | 松下電器産業株式会社 | Voltage dependent nonlinear resistor porcelain composition |
| JPS60107804A (en) * | 1983-11-17 | 1985-06-13 | 松下電器産業株式会社 | Voltage dependent nonlinear resistor porcelain composition |
| JPS6153160A (en) * | 1984-08-18 | 1986-03-17 | 松下電器産業株式会社 | Voltage depending non-linear resistor ceramic composition |
| JPS625612A (en) * | 1985-07-02 | 1987-01-12 | 松下電器産業株式会社 | Voltage depending non-linear resistor ceramic composition |
| JPS62179103A (en) * | 1986-01-31 | 1987-08-06 | 松下電器産業株式会社 | Voltage-dependant nonlinear resistance porcelain compound |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0249404A (en) * | 1988-08-11 | 1990-02-19 | Murata Mfg Co Ltd | Composite functional element |
| JPH02106904A (en) * | 1988-10-17 | 1990-04-19 | Murata Mfg Co Ltd | Complex function element |
| JPH0329208A (en) * | 1989-03-15 | 1991-02-07 | Matsushita Electric Ind Co Ltd | Dielectric ceramic composition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6257245B2 (en) | ||
| JPS6088401A (en) | Voltage depending nonlinear resistor porcelain composition | |
| JPS62282413A (en) | Porcelain compound for voltage nonlinear resistance unit | |
| JPS60107804A (en) | Voltage dependent nonlinear resistor porcelain composition | |
| JPS60107803A (en) | Voltage dependent nonlinear resistor porcelain composition | |
| EP0137044B1 (en) | Composition of porcelain for voltage-dependent, non-linear resistor | |
| JPH0430721B2 (en) | ||
| JPH03201503A (en) | Porcelain composition for voltage dependent nonlinear resistor | |
| JPS6229008A (en) | Dielectric ceramic composition | |
| JPH0345559A (en) | Ceramic composition having resistive element non-linear to electric voltage | |
| JPH03109261A (en) | Production of porcelain composition for nonlinear resistor having voltage dependency and varistor | |
| JPS62282412A (en) | Porcelain compound for voltage nonlinear resistance unit | |
| JPH04568B2 (en) | ||
| JPS62252904A (en) | Porcelain compound for voltage nonlinear resistance unit andmanufacture of the same | |
| JPS62252903A (en) | Porcelain compound for voltage nonlinear resistance unit andmanufacture of the same | |
| JP2944697B2 (en) | Voltage non-linear resistor ceramic composition | |
| JPS6348802A (en) | Porcelain compound for voltage dependent nonlinear resistor | |
| JPS62179103A (en) | Voltage-dependant nonlinear resistance porcelain compound | |
| JP3036128B2 (en) | Grain boundary oxidation type voltage non-linear resistance composition | |
| JPH0551553B2 (en) | ||
| JPH03261654A (en) | Voltage-dependent non-linear resistive porcelain composition and production of varistor | |
| JP2967439B2 (en) | Grain boundary oxidation type voltage non-linear resistance composition | |
| JPS625609A (en) | Voltage depending non-linear resistor ceramic composition | |
| JPH01226109A (en) | Voltage-dependent non-linearity resistor ceramic composition | |
| JPH0479201A (en) | Voltage nonlinear resistor porcelain composition |