JPH0430721B2 - - Google Patents
Info
- Publication number
- JPH0430721B2 JPH0430721B2 JP58246080A JP24608083A JPH0430721B2 JP H0430721 B2 JPH0430721 B2 JP H0430721B2 JP 58246080 A JP58246080 A JP 58246080A JP 24608083 A JP24608083 A JP 24608083A JP H0430721 B2 JPH0430721 B2 JP H0430721B2
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- voltage
- component
- noise
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 7
- 229910002367 SrTiO Inorganic materials 0.000 claims description 6
- 230000001419 dependent effect Effects 0.000 claims description 6
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 6
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 4
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910011255 B2O3 Inorganic materials 0.000 claims description 2
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 claims description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims 1
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910002637 Pr6O11 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Description
産業上の利用分野
本発明は電子機器や電気機器で発生する異常電
圧、ノイズ、静電気などを吸収もしくは除去する
SrTiO3を主成分とする電圧依存性非直線抵抗体
を得るための電圧依存性非直線抵抗体磁器組成物
に関するものである。
従来例の構成とその問題点
従来、各種電子機器、電気機器における異常高
電圧（以下サージと呼ぶ）の吸収、雑音の除去、
火花消去などのために電圧依存性非直線抵抗特性
を有するSiCバリスタやZnO系バリスタなどが使
用されていた。このようなバリスタの電圧−電流
特性は近似的に次式のように表わすことができ
る。
Ｉ＝（Ｖ／Ｃ）〓
ここで、Ｉは電流、Ｖは電圧、Ｃはバリスタ固
有の定数であり、αは電圧非直線指数である。
SiCバリスタのαは２〜７程度、ZnO系バリス
タではαが50にもおよぶものがある。このような
バリスタはサージのように比較的高い電圧の吸収
に優れた性能を有しているが、誘電率が低く固有
静電容量が小さいため、バリスタ電圧以下の低い
電圧の吸収（例えばノイズなど）に対してはほと
んど効果を示さず、また誘電損失角（tanδ）も５
〜10％と大きい。
一方、これらのノイズなどの除去には組成や焼
成条件を適当に選択することにより、見かけの誘
電率が５×104程度でtanδが１％前後の半導体磁
器コンデンサが利用されている。しかし、この半
導体磁器コンデンサはサージなどによりある限度
以上の電流が素子に印加されると破壊したり、コ
ンデンサとしての機能を果たさなくなつたりす
る。
上記のような理由で電気機器、電子機器におい
ては、サージ吸収やノイズ除去などの目的のため
には、通常バリスタとコンデンサ及び他の部品
（例えばコイル）とを組み合わせて使用され、例
えばノイズフイルタはこのような構成になつてい
る。
第１図は一般的な従来のノイズフイルタ回路を
示し、第２図はバリスタとコンデンサ及びコイル
を組み合わせて構成された従来のノイズフイルタ
回路を示しており、１はコイル、２はコンデン
サ、３はバリスタである。
しかし、このような第２図に示す構成は機器内
部における部品点数が多くなる上に機器の小形化
動向に相反するという欠点を有していた。
発明の目的
本発明は上記のような従来のサージ吸収、ノイ
ズ除去における欠点を除去し、バリスタとコンデ
ンサの両方の機能を有し、１個の素子でサージ吸
収及びノイズ除去が可能でバリスタ電圧が比較的
低い複合機能を有するバリスタを作るのに好適な
電圧依存性非直線抵抗体磁器組成物を提供するこ
とを目的としている。
発明の構成
本発明は上記のような目的を達成するために、
SrTiO3（以下第１成分と呼ぶ）を99.698〜
73.000mol％と、Nb2O5、Ta2O5、WO3、La2O3、
CeO2、Nd2O3、Y2O3、Pr6O11、Sm2O3、Eu2O3、
Sc2O3、Dy2O3の内の少なくとも１種類以上の金
属酸化物（以下第２成分と呼ぶ）を0.001〜
5.000mol％と、Al2O3（以下第３成分と呼ぶ）を
0.300〜15.000mol％と、B2O3、Ag2O、CuO、
MnO2、SiO2、Co2O3、NiO、MoO3、BeO、
Fe2O3、Li2O、Cr2O3、ZrO2、PbO、BaO、
CaO、MgO、TiO2、ZnO、P2O5、Sb2O3、
V2O5、Na2O、SrOの内の少なくとも１種類以上
の金属酸化物（以下第４成分と呼ぶ）を0.001〜
5.000mol％含有してなる電圧依存性非直線抵抗
体磁器組成物に係わるものである。
実施例の説明
以下に本発明による実施例を上げて具体的に説
明する。
SrCO2およびTiO2をSrTiO3になるようにそれ
ぞれ秤量配合し、ボールミルで約15時間撹拌混合
し、これを乾燥し、次に粉砕した後、1000℃、３
時間焼成し、再び粉砕してSrTiO3（第１成分）を
作製した。
次に、上記第１成分にNb2O5、Ta2O5、WO3、
La2O3、CeO2、Nb2O3、Y2O3、Pr6O11、Sm2O3、
Eu2O3、Sc2O3、Dy2O3の内の少なくとも１種類
以上の金属酸化物（第２成分）と、Al2O3（第３
成分）と、B2O3、Ag2O、CuO、MnO2、SiO2、
Co2O3、NiO、MoO3、BeO、Fe2O3、Li2O、
Cr2O3、ZrO2、PbO、BaO、CaO、MgO、
TiO2、ZnO、P2O5、Sb2O3、V2O5、Na2O、SrO
の内の少なくとも１種類以上の金属酸化物（第４
成分）を下記の第１表に示す配合比率になるよう
に秤量配合した。
次にボールミルで約20時間撹拌混合した（ただ
し、水溶性物質を用いる場合はエチルアルコール
などを用いて撹拌混合した。）。
次に、これを乾燥した後粉砕し、10〜15wt％
のポリビニルアルコールなどの有機結合剤を混合
して造粒し、全型圧力約2.0t／cm2で10mmφ×１mm
ｔの円板状に成形した。
これらの成形体をN2（95容積％）＋H2（５容積
％）に還元雰囲気中で約1400℃、４時間焼成し
た。次に、空気中1100℃、３時間熱処理を行つ
た。こうして得られた第３図に示す焼成体４は出
発原料とほぼ同じ組成であつた。
上記焼成体４の両平面に銀などの導電性ペース
トを塗布し、550℃で焼付けることにより電極５，
６を形成した。
上記の操作によつて得られた素子の特性を以下
の第２表に示す。
Industrial Application Field The present invention absorbs or removes abnormal voltage, noise, static electricity, etc. generated in electronic and electrical equipment.
The present invention relates to a voltage-dependent nonlinear resistor ceramic composition for obtaining a voltage-dependent nonlinear resistor containing SrTiO 3 as a main component. Conventional configurations and their problems Conventionally, various electronic devices and electrical devices have been used to absorb abnormally high voltages (hereinafter referred to as surges), remove noise,
SiC varistors and ZnO-based varistors, which have voltage-dependent nonlinear resistance characteristics, were used to eliminate sparks. The voltage-current characteristics of such a varistor can be approximately expressed as follows. I=(V/C) Here, I is current, V is voltage, C is a constant specific to the varistor, and α is a voltage nonlinear index. The α of SiC varistors is about 2 to 7, and the α of some ZnO-based varistors is as high as 50. Although such varistors have excellent performance in absorbing relatively high voltages such as surges, their low dielectric constant and small specific capacitance prevent them from absorbing low voltages below the varistor voltage (e.g. noise, etc.). ), and the dielectric loss angle (tanδ) is 5.
~10%, which is large. On the other hand, in order to remove these noises, semiconductor ceramic capacitors with an apparent dielectric constant of about 5×10 4 and a tan δ of about 1% are used by appropriately selecting the composition and firing conditions. However, if a current exceeding a certain limit is applied to the element due to a surge or the like, this semiconductor ceramic capacitor may be destroyed or may no longer function as a capacitor. For the reasons mentioned above, in electrical and electronic equipment, varistors are usually used in combination with capacitors and other parts (e.g. coils) for purposes such as surge absorption and noise removal.For example, noise filters are It is structured like this. Figure 1 shows a general conventional noise filter circuit, and Figure 2 shows a conventional noise filter circuit configured by combining a varistor, a capacitor, and a coil, where 1 is a coil, 2 is a capacitor, and 3 is a I'm a barista. However, the configuration shown in FIG. 2 has the disadvantage that the number of parts inside the device increases and it is contrary to the trend toward miniaturization of devices. Purpose of the Invention The present invention eliminates the drawbacks of conventional surge absorption and noise removal as described above, has the functions of both a varistor and a capacitor, enables surge absorption and noise removal with one element, and reduces the varistor voltage. The object is to provide a voltage-dependent nonlinear resistance ceramic composition suitable for making a varistor with a relatively low composite function. Structure of the Invention In order to achieve the above objects, the present invention has the following features:
SrTiO 3 (hereinafter referred to as the first component) from 99.698 to
73.000mol%, Nb 2 O 5 , Ta 2 O 5 , WO 3 , La 2 O 3 ,
CeO2 , Nd2O3 , Y2O3 , Pr6O11 , Sm2O3 , Eu2O3 ,
At least one metal oxide of Sc 2 O 3 and Dy 2 O 3 (hereinafter referred to as the second component) from 0.001 to
5.000mol% and Al 2 O 3 (hereinafter referred to as the third component)
0.300~15.000mol%, B2O3 , Ag2O , CuO,
MnO2 , SiO2 , Co2O3 , NiO, MoO3 , BeO ,
Fe 2 O 3 , Li 2 O, Cr 2 O 3 , ZrO 2 , PbO, BaO,
CaO, MgO, TiO2 , ZnO , P2O5 , Sb2O3 ,
At least one metal oxide of V 2 O 5 , Na 2 O, and SrO (hereinafter referred to as the fourth component) from 0.001 to
This relates to a voltage-dependent nonlinear resistor ceramic composition containing 5.000 mol%. DESCRIPTION OF EMBODIMENTS Examples according to the present invention will be specifically described below. SrCO 2 and TiO 2 were weighed and blended to form SrTiO 3 , stirred and mixed in a ball mill for about 15 hours, dried, then pulverized, and then heated at 1000℃ for 3 hours.
SrTiO 3 (first component) was produced by firing for a time and pulverizing again. Next, Nb 2 O 5 , Ta 2 O 5 , WO 3 ,
La 2 O 3 , CeO 2 , Nb 2 O 3 , Y 2 O 3 , Pr 6 O 11 , Sm 2 O 3 ,
At least one metal oxide (second component) selected from Eu 2 O 3 , Sc 2 O 3 , and Dy 2 O 3 and Al 2 O 3 (third component).
components), B 2 O 3 , Ag 2 O, CuO, MnO 2 , SiO 2 ,
Co2O3 , NiO, MoO3 , BeO, Fe2O3 , Li2O ,
Cr2O3 , ZrO2 , PbO, BaO, CaO , MgO,
TiO 2 , ZnO, P 2 O 5 , Sb 2 O 3 , V 2 O 5 , Na 2 O, SrO
At least one metal oxide of
Components) were weighed and blended so as to have the blending ratios shown in Table 1 below. Next, the mixture was stirred and mixed in a ball mill for about 20 hours (however, when using a water-soluble substance, ethyl alcohol or the like was used for stirring and mixing). Next, this is dried and crushed, and 10 to 15 wt%
Mix organic binder such as polyvinyl alcohol and granulate it to 10mmφ x 1mm at a total mold pressure of about 2.0t/ cm2.
It was molded into a t-sized disc. These compacts were fired at about 1400° C. for 4 hours in a reducing atmosphere of N 2 (95% by volume) + H 2 (5% by volume). Next, heat treatment was performed in air at 1100°C for 3 hours. The thus obtained fired body 4 shown in FIG. 3 had almost the same composition as the starting material. By applying a conductive paste such as silver to both surfaces of the fired body 4 and baking it at 550°C, the electrode 5,
6 was formed. The characteristics of the device obtained by the above operation are shown in Table 2 below.
【表】【table】
【表】【table】
【表】
(注) ＊……比較例
[Table] (Note) *……Comparative example
【表】【table】
【表】【table】
【表】
ここで、素子のバリスタとしての特性評価は上
述した電圧−電流特性式
Ｉ＝（Ｖ／Ｃ）〓
（ただし、Ｉは電流、Ｖは電圧、Ｃはバリスタ
固有の定数、αは非直線指数）におけるαとＣに
よつて行うことが可能である。しかし、Ｃの正確
な測定が困難であるため、本発明においては1nA
のバリスタ電流を流した時の単位厚み当りのバリ
スタ電圧（以下V1nA／mmと呼ぶ）の値と、
α＝１／log（V10nA／V1nA）〔ただし、V10nAは
10mAのバリスタ電流を流した時のバリスタ電
圧、V1nAは1mAのバリスタ電流を流した時のバ
リスタ電圧〕の値によりバリスタとしての特性評
価を行つている。また、コンデンサとしての特性
評価は測定周波数1KHzにおける誘電率ε、誘電
損失角tanδで行つている。
以上示したように第３成分が含まれない場合、
αが小さく実用的でない。また、第３成分を含む
場合αは大きくなり、添加量が増加するに従つて
V1nA／mmが減少し、低いバリスタ電圧の素子を
得ることができる。さらに、第４成分を含む場合
にはαがさらに大きくなり、バリスタ電圧が低
く、α、誘電率の大きい素子を得ることができ
る。
従つて、第２成分，第３成分を含むことにより
バリスタおよびコンデンサとしての基本的特性を
得ることができ、その上さらに第４成分を添加す
るとさらに特性を改善することができる。
このような効果が得られるのは、第４成分の添
加量が0.001〜5.000mol％の範囲である。
またこのような効果が現われるのは第２成分が
0.001〜5.000mol％の範囲であり、5.000mol％を
超えるとtanδが著しく大きくなる。また、第３成
分は添加量の増加にともなつてバリスタ電圧を下
げる効果があるが、この効果が現われるのは
0.300mol％〜15.000mol％の範囲である。
15.000mol％を超えると誘電率が著しく減少し、
実用的でなくなる。
なお、実施例では第２，第４成分の組合せにつ
いては一部しか示さなかつたが、それぞれ複数種
類の物質を組合せて規定した添加量の範囲内であ
れば同様の効果があることを確認した。
以上述べたように主成分としてSrTiO3を用い、
第２，第３成分を添加することにより、バリスタ
およびコンデンサとしての基本的特性を得ること
ができる。さらに、第４成分を添加すると特性を
さらに改善することができる。また、第３成分は
添加量が増加するとバリスタ電圧を下げる効果を
有し、低いバリスタ電圧の素子を得ることがで
き、静電気ノイズなどの低電圧サージの吸収に有
効である。
第１図に示す従来のフイルタ回路に第５図のノ
イズ入力Ａを印加すると第５図の出力状況曲線Ｃ
となり、十分にノイズを吸収除去していない。
第２図に示す従来のバリスタを含むフイルタ回
路ではノイズ吸収除去に効果は得られるが、バリ
スタを別個に必要とするため部品点数が多くな
る。
そこで本発明による素子を使用して第４図に示
すような回路を作り、第５図に示すようなノイズ
入力Ａを印加したところ、第５図の出力状況曲線
Ｂのようになり、ノイズを十分に吸収除去するこ
とができた。
なお、第４図で７は本発明による素子、８はコ
イルである。
発明の効果
以上述べたように本発明による磁器組成物を利
用した素子は従来にないバリスタとコンデンサの
複合機能を有し、従来のノイズフイルタ回路を簡
略化し、小形、高性能、低コスト化に寄与するも
のであり、各種電気機器、電子機器のサージ、ノ
イズ吸収に利用が可能であり、その実用上の価値
は極めて大きい。[Table] Here, the characteristics of the device as a varistor are evaluated using the above voltage-current characteristic equation I = (V/C) (where I is the current, V is the voltage, C is a constant unique to the varistor, and α is a This can be done by α and C in the linear index). However, since accurate measurement of C is difficult, in the present invention, 1 nA
The value of the varistor voltage per unit thickness (hereinafter referred to as V 1nA /mm) when a varistor current of
The characteristics of the varistor are evaluated based on the value of the varistor voltage when a varistor current of 10 mA is applied, and V 1nA is the varistor voltage when a varistor current of 1 mA is applied. In addition, the characteristics as a capacitor are evaluated using the dielectric constant ε and dielectric loss angle tan δ at a measurement frequency of 1 KHz. As shown above, if the third component is not included,
α is small and impractical. Also, when a third component is included, α increases, and as the amount added increases,
V 1nA /mm is reduced, and a device with a low varistor voltage can be obtained. Furthermore, when the fourth component is included, α becomes even larger, and it is possible to obtain an element with a low varistor voltage, a large α, and a large dielectric constant. Therefore, by including the second component and the third component, the basic characteristics of a varistor and a capacitor can be obtained, and by further adding the fourth component, the characteristics can be further improved. Such an effect can be obtained when the amount of the fourth component added is in the range of 0.001 to 5.000 mol%. Also, this effect appears when the second component is
It is in the range of 0.001 to 5.000 mol%, and when it exceeds 5.000 mol%, tan δ becomes significantly large. In addition, the third component has the effect of lowering the varistor voltage as the amount added increases, but this effect appears only after
It ranges from 0.300mol% to 15.000mol%.
When it exceeds 15.000mol%, the dielectric constant decreases significantly,
becomes impractical. Although only some of the combinations of the second and fourth components were shown in the examples, it was confirmed that similar effects can be obtained if multiple types of substances are combined and within the specified addition amounts. . As mentioned above, using SrTiO 3 as the main component,
By adding the second and third components, basic characteristics as a varistor and a capacitor can be obtained. Furthermore, the properties can be further improved by adding a fourth component. Furthermore, when the amount of the third component added increases, it has the effect of lowering the varistor voltage, making it possible to obtain an element with a low varistor voltage, and is effective in absorbing low voltage surges such as static electricity noise. When the noise input A shown in FIG. 5 is applied to the conventional filter circuit shown in FIG. 1, the output situation curve C shown in FIG.
Therefore, the noise is not sufficiently absorbed and removed. The conventional filter circuit including a varistor shown in FIG. 2 is effective in absorbing and removing noise, but requires a separate varistor, which increases the number of parts. Therefore, when a circuit as shown in Fig. 4 was made using the element according to the present invention and a noise input A as shown in Fig. 5 was applied, the output situation curve B in Fig. 5 was obtained, and the noise was reduced. It was able to be sufficiently absorbed and removed. In FIG. 4, 7 is an element according to the present invention, and 8 is a coil. Effects of the Invention As described above, the element using the ceramic composition of the present invention has an unprecedented combined function of a varistor and a capacitor, and simplifies the conventional noise filter circuit, making it compact, high-performance, and low-cost. It can be used to absorb surges and noise in various electrical and electronic devices, and its practical value is extremely large.
第１図，第２図はそれぞれ従来におけるノイズ
フイルタ回路の回路図、第３図は本発明による磁
器組成物を用いた素子の断面図、第４図は本発明
による磁器組成物を用いたノイズフイルタ回路の
回路図、第５図は本発明と従来のノイズフイルタ
回路による入力ノイズと出力ノイズの状況を比較
して示す特性図である。
Figures 1 and 2 are circuit diagrams of conventional noise filter circuits, Figure 3 is a cross-sectional view of an element using the ceramic composition according to the present invention, and Figure 4 is a noise filter circuit diagram using the ceramic composition according to the present invention. The circuit diagram of the filter circuit, FIG. 5, is a characteristic diagram showing a comparison of the input noise and output noise situations of the present invention and the conventional noise filter circuit.
Claims (1)
Ta2O5、WO3、La2O3、CeO2、Nd2O3、Y2O3、
Pr6O11、Sm2O3、Eu2O3、Sc2O3、Dy2O3の内の
少なくとも１種類以上の金属酸化物を0.001〜
5.000mol％と、Al2O3を0.300〜15.000mol％と、
B2O3、Ag2O、CuO、MnO2、SiO2、Co2O3、
NiO、MoO3、BeO、Fe2O3、Li2O、Cr2O3、
ZrO2、PbO、BaO、CaO、MgO、TiO2、ZnO、
P2O5、Sb2O3、V2O5、Na2O、SrOの内の少なく
とも１種類以上を0.001〜5.000mol％含有してな
る電圧依存性非直線抵抗体磁器組成物。1 SrTiO 3 with 99.698 to 75.000 mol%, Nb 2 O 5 ,
Ta 2 O 5 , WO 3 , La 2 O 3 , CeO 2 , Nd 2 O 3 , Y 2 O 3 ,
At least one metal oxide of Pr 6 O 11 , Sm 2 O 3 , Eu 2 O 3 , Sc 2 O 3 , Dy 2 O 3 from 0.001 to
5.000 mol% and 0.300 to 15.000 mol% Al 2 O 3 ,
B2O3 , Ag2O , CuO, MnO2 , SiO2 , Co2O3 ,
NiO, MoO3 , BeO, Fe2O3 , Li2O , Cr2O3 ,
ZrO2 , PbO, BaO, CaO, MgO, TiO2 , ZnO,
A voltage-dependent nonlinear resistor ceramic composition containing 0.001 to 5.000 mol% of at least one of P2O5 , Sb2O3 , V2O5 , Na2O , and SrO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58246080A JPS60136205A (en) | 1983-12-23 | 1983-12-23 | Voltage dependent nonlinear resistor porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58246080A JPS60136205A (en) | 1983-12-23 | 1983-12-23 | Voltage dependent nonlinear resistor porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60136205A JPS60136205A (en) | 1985-07-19 |
| JPH0430721B2 true JPH0430721B2 (en) | 1992-05-22 |
Family
ID=17143178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58246080A Granted JPS60136205A (en) | 1983-12-23 | 1983-12-23 | Voltage dependent nonlinear resistor porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60136205A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6243108A (en) * | 1985-08-21 | 1987-02-25 | 太陽誘電株式会社 | Ceramic composition for varistor |
| JPS6243110A (en) * | 1985-08-21 | 1987-02-25 | 太陽誘電株式会社 | Ceramic composition for varistor |
| JPS6243106A (en) * | 1985-08-21 | 1987-02-25 | 太陽誘電株式会社 | Ceramic composition for varistor |
| JPS6243107A (en) * | 1985-08-21 | 1987-02-25 | 太陽誘電株式会社 | Ceramic composition for varistor |
| JPS6243109A (en) * | 1985-08-21 | 1987-02-25 | 太陽誘電株式会社 | Ceramic composition for varistor |
| JPS62282412A (en) * | 1986-05-30 | 1987-12-08 | 松下電器産業株式会社 | Porcelain compound for voltage nonlinear resistance unit |
| JPS6364959A (en) * | 1986-09-02 | 1988-03-23 | ティーディーケイ株式会社 | Semiconductor ceramic composition |
| JPH03138909A (en) * | 1989-10-24 | 1991-06-13 | Matsushita Electric Ind Co Ltd | Voltage dependent non-linear resistor element and its manufacture |
| CN117941679B (en) * | 2024-03-26 | 2024-05-31 | 安徽正合雅聚新材料科技有限公司 | Silver-loaded glass antibacterial agent and transparent antibacterial resin product and product thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842219A (en) * | 1981-09-04 | 1983-03-11 | 松下電器産業株式会社 | Composite function element |
| JPS5990904A (en) * | 1982-11-16 | 1984-05-25 | 株式会社村田製作所 | Porcelain composition for voltage nonlinear resistor |
-
1983
- 1983-12-23 JP JP58246080A patent/JPS60136205A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842219A (en) * | 1981-09-04 | 1983-03-11 | 松下電器産業株式会社 | Composite function element |
| JPS5990904A (en) * | 1982-11-16 | 1984-05-25 | 株式会社村田製作所 | Porcelain composition for voltage nonlinear resistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60136205A (en) | 1985-07-19 |
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