JPS62281240A - Cathode-ray tube - Google Patents
Cathode-ray tubeInfo
- Publication number
- JPS62281240A JPS62281240A JP12676486A JP12676486A JPS62281240A JP S62281240 A JPS62281240 A JP S62281240A JP 12676486 A JP12676486 A JP 12676486A JP 12676486 A JP12676486 A JP 12676486A JP S62281240 A JPS62281240 A JP S62281240A
- Authority
- JP
- Japan
- Prior art keywords
- water glass
- bi2o3
- compound
- shadow mask
- ray tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 235000019353 potassium silicate Nutrition 0.000 claims abstract description 21
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 229910021480 group 4 element Inorganic materials 0.000 claims abstract 5
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract description 32
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 20
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- RLQWHDODQVOVKU-UHFFFAOYSA-N tetrapotassium;silicate Chemical compound [K+].[K+].[K+].[K+].[O-][Si]([O-])([O-])[O-] RLQWHDODQVOVKU-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 229940125904 compound 1 Drugs 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 description 15
- 239000000843 powder Substances 0.000 description 14
- 238000000498 ball milling Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101100336480 Drosophila melanogaster Gem2 gene Proteins 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000007780 powder milling Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 3、発明の詳細な説明 [産業上の利用分野] 本発明は、シャドウマスクを有する陰極線管に関する。[Detailed description of the invention] 3. Detailed description of the invention [Industrial application field] The present invention relates to a cathode ray tube with a shadow mask.
さらに詳しくはシャドウマスクのドーミングを低減する
ため、シャドウマスクの電子ビーム照射面側に熱変形を
抑制する物質で被膜成形してなる陰極線管に関する。More specifically, the present invention relates to a cathode ray tube formed by forming a coating on the electron beam irradiation surface side of the shadow mask with a material that suppresses thermal deformation in order to reduce doming of the shadow mask.
[従来の技術]
通常のシャドウマスク式カラー陰極線管の構成を第1図
に示す。第1図において、(1)は内部を高真空に保つ
ための外囲器、(2は3本の電子ビームを放出するため
の電子銃、(3)は色選択電極を構成するシャドウマス
クであり、たとえば多数のスリットを有する薄い鉄板か
らなる。(4)は外囲器(1)の一部を構成する透光性
のガラスパネル、(5)は蛍光面で赤、緑、青に発光す
る蛍光体のストライプがガラスパネル(4)の内面に順
次塗布されており、これらストライブ群が各々前記シャ
ドウマスク(3)のスリット群の各々:こ電子光学的に
正確に対応するような位置関係に設けられている。[Prior Art] The structure of a conventional shadow mask type color cathode ray tube is shown in FIG. In Figure 1, (1) is an envelope for maintaining a high vacuum inside, (2 is an electron gun for emitting three electron beams, and (3) is a shadow mask that constitutes a color selection electrode. For example, it consists of a thin iron plate with many slits. (4) is a translucent glass panel that forms part of the envelope (1), and (5) is a fluorescent screen that emits red, green, and blue light. stripes of phosphor are successively applied to the inner surface of the glass panel (4), and each of these stripes is positioned in such a way that it corresponds exactly electro-optically to each of the slit groups of the shadow mask (3). established in a relationship.
つぎに前記カラー陰極線管の動作について説明する。電
子銃(2から放出された3本の電子ビームは偏向装置(
6)により蛍光面(5)の全面を走査するように偏向さ
れてシャドウマスク(3)に到達する。このシャドウマ
スク(3)は3本の電子ビームが各々に対応する色の蛍
光体ストライブだけを叩くようにさせる色選択機能を有
する。そして前記のごとくこれらの位置関係は本来正確
な対応ができるように設定されている。Next, the operation of the color cathode ray tube will be explained. The three electron beams emitted from the electron gun (2) are deflected by a deflection device (
6), the light beam is deflected to scan the entire surface of the phosphor screen (5) and reaches the shadow mask (3). This shadow mask (3) has a color selection function that allows the three electron beams to hit only the phosphor stripes of their respective colors. As described above, these positional relationships are originally set to allow accurate correspondence.
しかしながらこのばあい、電子銃(aから放出された電
子ビームのうち約80%がシャドウマスク(3)に衝突
してさえぎられ、シャドウマスク(3)に全く無意味な
熱エネルギーを与え、シャドウマスク(3)を昇温させ
る。その結果、シャドウマスク(3)は熱膨張により変
形し、正確に対応していたシャドウマスク(3)と蛍光
体ストライブの位置関係がずれて色ずれの大きな要因と
なる。However, in this case, about 80% of the electron beam emitted from the electron gun (a) collides with the shadow mask (3) and is blocked, giving completely meaningless thermal energy to the shadow mask (3) and damaging the shadow mask. (3).As a result, the shadow mask (3) is deformed due to thermal expansion, and the positional relationship between the shadow mask (3) and the phosphor strips, which had been accurately matched, is shifted, which is a major cause of color shift. becomes.
これらの問題点を解決する方法として、特開昭55−7
6553号公報では、シャドウマスク(3)の電子ビー
ム照射面にシャドウマスク(3)を構成する物質よりも
電子ビームの反射率の大きな物質からなる被膜を設ける
ことや、また特公昭60−14459号公報では、10
をこえた原子番号を有する重金属の材料を含む溶液を吹
付塗布して前記電子ビームを反射するための塗膜(7)
を設けることが提案されており、前記重金属材料として
鉛、タングステンおよびビスマスがえらばれ、またこれ
らの炭化物、硫化物および酸化物についてもその有用性
が述べられている。As a method to solve these problems, JP-A-55-7
Japanese Patent Publication No. 6553 discloses that a coating made of a material having a higher electron beam reflectivity than the material constituting the shadow mask (3) is provided on the electron beam irradiated surface of the shadow mask (3), and Japanese Patent Publication No. 14459/1983 discloses that In the official bulletin, 10
A coating film (7) for reflecting the electron beam by spraying a solution containing a heavy metal material having an atomic number exceeding
It has been proposed that lead, tungsten, and bismuth be used as the heavy metal materials, and the usefulness of their carbides, sulfides, and oxides has also been described.
特公昭60−14459号公報に開示された塗gl(7
1が設けられたシャドウマスクを用いた陰極線管を製造
するばあい、いずれの重金属材料を用いるばあいも、そ
の微粒子の平均粒径を1−以下にするのが好適とされて
おり、たとえば被膜材料として酸化ビスマス(Bi20
3)をえらんだばあい、通常数−〜数十虜程度の大粒径
の粒子を粉砕して用いる。従来粉砕方法としてボールミ
ル法を用いており、ボールミル時に酸化ビスマスと水ガ
ラスおよび適量の水を同時に加え、5〜7日間のボール
ミルを行なった後再度水ガラスおよび水を適量加えてシ
ャドウマスク上に塗布し乾燥して前記のドーミングを低
減するシャドウマスクを製造し、通常のカラー陰極線管
の製造工程を経てえられている。Painted GL (7
When manufacturing a cathode ray tube using a shadow mask provided with 1, it is preferable that the average particle diameter of the fine particles be 1- or less, regardless of the use of any heavy metal material. Bismuth oxide (Bi20
If 3) is selected, particles with a large particle size of several to several tens of particles are usually ground and used. Conventionally, the ball mill method is used as a grinding method, and during ball milling, bismuth oxide, water glass, and an appropriate amount of water are added at the same time, and after ball milling for 5 to 7 days, water glass and water are added again and an appropriate amount of water is applied onto the shadow mask. This is then dried to produce a shadow mask that reduces the above-mentioned doming, and is obtained through the usual manufacturing process of color cathode ray tubes.
すなわち、Bi2O3と水ガラスおよび適量の水とを混
合し、Bi2O3粉末の平均粒径が1μm以下になるま
で、ボールミルによる粉砕を行なったのち、シャドウマ
スク上に塗布し、乾燥して450℃程度で30分間はど
焼付けが行なわれている。That is, Bi2O3, water glass, and an appropriate amount of water are mixed, and after pulverizing with a ball mill until the average particle size of Bi2O3 powder becomes 1 μm or less, it is applied on a shadow mask, dried, and heated at about 450°C. Baking is carried out for 30 minutes.
[発明が解決しようとする問題点]
しかしながら前記のようにして陰極線管を製造すると陰
極線管を組立てたあと、アウトガスが多く、ともすれば
寿命の短い製品ができることかある。その主要な原因は
、本発明者らが鋭意研究の結果、B+2o3がCO□と
反応し、B!202CO3・■
、H2Oを生成するためであることがわかった。この反
応は水ガラスが空気中のCO2ガスを吸収しゃすいため
ボールミル中に促進されやすかった。また、バインダー
として用いるカリウム系水ガラス中ではCO2ガス吸収
により に2C03が生成し、この化合物は強吸湿性で
あるため、上記反応をさらに促進する。(ダブリュー・
ニー・ウィンダ(W、 A。[Problems to be Solved by the Invention] However, when cathode ray tubes are manufactured as described above, after the cathode ray tubes are assembled, there is a lot of outgas, which may result in a product with a short lifespan. As a result of intensive research by the present inventors, the main cause is that B+2o3 reacts with CO□, and B! It was found that this was to generate 202CO3.■ and H2O. This reaction was easily accelerated during ball milling because water glass easily absorbed CO2 gas in the air. Furthermore, in the potassium-based water glass used as a binder, 2C03 is produced by absorption of CO2 gas, and since this compound is strongly hygroscopic, it further accelerates the above reaction. (W/
Ni Winda (W, A.
Wink) の「インダストリアル アンド エンジ
ニアリング ケミストリー(Industrial a
ndEngineering Chemistry)、
18巻、 251頁、1964年」参照)。Wink)'s ``Industrial and Engineering Chemistry''
ndEngineering Chemistry),
18, p. 251, 1964).
本発明はアウトガスの少ない、かつ製造工程上の管理に
対しても、それほど細心の注意を必要としない陰極線管
を提供することを目的とするものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a cathode ray tube that produces less outgas and does not require careful attention to manufacturing process management.
[問題点を解決するだめの手段]
本発明はBi2O3と原子番号32以下の■族元素の酸
化物との化合物と、水ガラスとの混合物をシャドウマス
ク上に塗布、焼付けしてなることを特徴とする陰極線管
に関し、CO2と化合しゃすいa;2o3のかわりにB
12o3と5i02、G1302またはTiQ2との化
合物を用いるものである。[Means for Solving the Problems] The present invention is characterized in that a mixture of a compound of Bi2O3 and an oxide of a Group I element having an atomic number of 32 or less, and water glass is applied onto a shadow mask and baked. Regarding the cathode ray tube, which combines with CO2, B instead of a;2o3
A compound of 12o3 and 5i02, G1302 or TiQ2 is used.
[作用および実施例l
B12(hと本発明に使用しうる原子番号32以下の■
族元素の酸化物としては、s r 02、Ge07、T
iO2などがあげられ、Bi2O3とそれら酸化物との
化合物としては、8i12 SiO?O,Bi12
GeO?o 、 Bi+?TiO2゜などがあげられ
る、Bi12 5102g 、B1I2 Ge026
またはB!+z Ti021は、Bi2036モルと
5i021モル、GeO21モルまたはTi021モル
とが化合したものであり、たとえばBi12 SiO
昂、は融点的900”Cの物質である。5i02、ae
o2またはTiO2含有■は僅が2〜3.6%にしかす
ぎないのに、これらの化合物はCO2との化合物を全く
生成しない。またBi2O3単独よりも融点が高く安定
な化合物である(イー・エム・レビン(E、H,LeV
in)らの[ジャーナル オブ リサーチ オブ ザ
ナショナル ピュアロウ オブ スタンダーX(JOI
IRNAL OF RESEARCHor the N
ational Bureau of 5tandar
ds) 、68A巻、21.201頁、1964年」参
照)。[Function and Examples 1 B12 (h and ■ with atomic number 32 or less that can be used in the present invention
Group element oxides include s r 02, Ge07, T
Examples include iO2, and compounds of Bi2O3 and these oxides include 8i12 SiO? O, Bi12
GeO? o, Bi+? Examples include TiO2゜, Bi12 5102g, B1I2 Ge026
Or B! +z Ti021 is a combination of Bi2036 mol and 5i021 mol, GeO21 mol or Ti021 mol, for example, Bi12 SiO
5i02, ae is a substance with a melting point of 900"C.
o2 or TiO2 containing only 2-3.6%, these compounds do not form any compounds with CO2. It is also a stable compound with a higher melting point than Bi2O3 alone (E.M. Levin (E, H, LeV
in) et al. [Journal of Research of the
National Pure Row of Standard X (JOI
IRNAL OF RESEARCHor the N
ational Bureau of 5tandar
ds), Vol. 68A, p. 21.201, 1964).
B12(hとSiO2との化合物としてB!+z 5
i021、Bi2O3とaeo2との化合物としてBi
+z Ge0B、B12(hとTlO2との化合物と
しテBi+2’ Ti02fi’lr 用イるばあい、
あらかじめ6モルのB+=03と1モルの5i02粉末
、Gem2粉末まタハTiO2粉末を600’C以上、
好ましくは800℃以下で焼成し合成した3iI2 3
102g粉末、Bi、2 Ge0,6粉末またはB
i +t Ti02o粉末を用いる。B12 (as a compound of h and SiO2 B!+z 5
i021, Bi as a compound of Bi2O3 and aeo2
+z Ge0B, B12 (h and TlO2 as a compound and Bi+2'Ti02fi'lr)
In advance, 6 moles of B+=03, 1 mole of 5i02 powder, Gem2 powder and TiO2 powder were heated at 600'C or higher.
3iI2 3 synthesized preferably by firing at 800°C or less
102g powder, Bi, 2 Ge0,6 powder or B
i +t Ti02o powder is used.
本発明に用いる水ガラスとしては、ナトリウム系水ガラ
ス、カリウム系水ガラスなどがあげられる。Examples of the water glass used in the present invention include sodium water glass and potassium water glass.
前記Bi2O3とSiO2、GeO2またはTiO2と
の化合物1部(重量部、以下同様)に対して水0.6〜
0.8部および水ガラス0.2〜0.4部が用いられる
。0.6 to 1 part of water (parts by weight, same hereinafter) of the compound of Bi2O3 and SiO2, GeO2 or TiO2
0.8 parts and 0.2-0.4 parts of water glass are used.
Bi+z SiO?o粉末、3i12 Gem加粉
末またはBi+?Ti026粉末と水とをボールミル法
などにより、平均粒径が1μm以下となるまで粉砕した
のち、水ガラスを適当量加え、塗布液を作製する。えら
れた塗布液をシャドウマスクの電子ビーム照射面側に常
法により乾燥前の塗膜の厚さが3〜7爛となるように塗
布したのち、室温で自然乾燥する。Bi+z SiO? o powder, 3i12 Gem-added powder or Bi+? After pulverizing Ti026 powder and water using a ball mill method or the like until the average particle size becomes 1 μm or less, an appropriate amount of water glass is added to prepare a coating solution. The resulting coating solution is applied to the electron beam irradiated side of the shadow mask by a conventional method so that the coating film has a thickness of 3 to 7 coats before drying, and then air-dried at room temperature.
つぎに400〜500℃、好ましくは450℃で、15
〜45分間、好ましくは30分間、空気中で焼付けを行
ない、通常の陰極線管の製造工程を経て、本発明の陰極
線管が製造される。Next, at 400 to 500°C, preferably 450°C, 15
The cathode ray tube of the present invention is manufactured by performing baking in air for up to 45 minutes, preferably 30 minutes, and following the usual cathode ray tube manufacturing process.
なお、本発明に用いるシャドウマスクとしては、従来よ
り陰極線管に用いられているものでよい。Note that the shadow mask used in the present invention may be one that has been conventionally used in cathode ray tubes.
たとえばBi+2Si026粉末、Bi12 Ge0
n粉末またはBi+z T!(h粉末3koを用いた
ばあいについて以下に説明する。For example, Bi+2Si026 powder, Bi12 Ge0
n powder or Bi+z T! (The case using h powder 3ko will be explained below.
該粉末に水2gを加え、ボールミルを3日間行った。え
られた混合液にナトリウム系水ガラス(固形分28.2
5%、モル比5i02 / Na2O−3,43>を6
007加え、よく混合(1日間程度)しシャドウマスク
の電子ビーム照射面側に、乾燥前の塗膜の厚さが10μ
田となるように塗布した。乾燥は空気中、室温で0.1
5時間行なったのち、焼付けを空気中450℃で30分
間行ない、塗膜が設けられたシャドウマスクを製造した
。ついでえられたシャドウマスクを用い通常の陰極線管
の製造工程を経て、陰極線管を製造した。なお、ナトリ
ウム系水ガラスのかわりにカリウム系水ガラスを用いて
も同様の陰極線管をうろことができる。2 g of water was added to the powder, and ball milling was performed for 3 days. Sodium-based water glass (solid content 28.2
5%, molar ratio 5i02/Na2O-3,43>6
In addition to 007, mix well (for about 1 day) and apply a coating film with a thickness of 10μ before drying on the electron beam irradiated side of the shadow mask.
It was applied to form a rice field. Drying in air at room temperature is 0.1
After 5 hours, baking was performed in air at 450° C. for 30 minutes to produce a shadow mask provided with a coating film. A cathode ray tube was then manufactured using the obtained shadow mask through the usual cathode ray tube manufacturing process. Note that a similar cathode ray tube can be used by using potassium water glass instead of sodium water glass.
第2図は、従来の陰極線管に用いられるB12Chとカ
リウム系水ガラスからなる塗膜の赤外吸収スペクトルを
示すグラフである。図中01)は電子ビーム照射前、(
+21は電子ビーム照射後のスペクトルであり、 (a
)のピークはBi12 31g2o中のs r 04の
吸収を示し、(b+のピークはB ! +2 S i
Oa中のB1−0の吸収を示す。第2図から明らかな
ように、上記のような混合物からなるシャドウマスク上
の塗膜が電子ビーム照射をうけると、Bi2O3は水ガ
ラス中の5i02と反応し、8+12 3i021を生
成することがある。これは塗膜の接着強度を低下させる
。しかしながら本発明に用いる、Bi12 5i020
. Bi12 GC!020またはB i +2
T i Oには水ガラスとさらに反応することがないた
め、長期間にわたって安定した接着強度を有する塗膜か
えられる。FIG. 2 is a graph showing the infrared absorption spectrum of a coating film made of B12Ch and potassium water glass used in a conventional cathode ray tube. 01) in the figure is before electron beam irradiation, (
+21 is the spectrum after electron beam irradiation, (a
) peak indicates absorption of s r 04 in Bi12 31g2o, and (b+ peak indicates B ! +2 S i
The absorption of B1-0 in Oa is shown. As is clear from FIG. 2, when a coating film on a shadow mask made of the above mixture is irradiated with an electron beam, Bi2O3 may react with 5i02 in water glass to produce 8+12 3i021. This reduces the adhesive strength of the coating. However, Bi12 5i020 used in the present invention
.. Bi12 GC! 020 or B i +2
Since T i O does not react with water glass further, a coating film having stable adhesive strength over a long period of time can be obtained.
[発明の効果] 本発明の陰極線管は以下のような効果を奏する。[Effect of the invention] The cathode ray tube of the present invention has the following effects.
■Bt2o3と5i02 、GeO2またはTiO2と
の化合物がCO2と化合しないため、アウトガス発生の
原因となる物質が生成せず、安定した高性能の陰極線管
かえられる。(2) Since the compound of Bt2o3 and 5i02, GeO2 or TiO2 does not combine with CO2, substances that cause outgassing are not generated, allowing a stable and high-performance cathode ray tube to be replaced.
■Bi2O3と5102、GeO2またはTiO2との
化合物は水ガラス中の5i02と反応しないため、塗膜
の接着強度が低下しない。(2) Compounds of Bi2O3 and 5102, GeO2 or TiO2 do not react with 5i02 in water glass, so the adhesive strength of the coating film does not decrease.
■B103と5i02、aeo2またはTiO2との化
合物の電子ビーム散乱能力はBi20aと全く同一であ
る。(2) The electron beam scattering ability of a compound of B103 and 5i02, aeo2 or TiO2 is exactly the same as that of Bi20a.
【図面の簡単な説明】
第1図は、通常のシャドウマスク式カラー陰極線管の構
成を示す部分断面図であり、第2図は、電子ビーム照射
前および照射後のBi2O3とカリウム系水ガラスから
なる塗膜の赤外吸収スペクトルを示すグラフである。
代 理 人 大 岩 増 雄″;P1
圓[Brief Description of the Drawings] Fig. 1 is a partial cross-sectional view showing the structure of a normal shadow mask type color cathode ray tube, and Fig. 2 shows the composition of Bi2O3 and potassium water glass before and after electron beam irradiation. It is a graph showing the infrared absorption spectrum of the coating film. Agent: Masuo Oiwa'';P1
circle
Claims (4)
酸化物との化合物と、水ガラスとの混合物をシャドウマ
スク上に塗布、焼付けしてなることを特徴とする陰極線
管。(1) A cathode ray tube characterized in that it is formed by coating and baking a mixture of a compound of Bi_2O_3 and an oxide of a group IV element having an atomic number of 32 or less, and water glass on a shadow mask.
_2、GeO_2および/またはTiO_2である特許
請求の範囲第(1)項記載の陰極線管。(2) The oxide of a group IV element with an atomic number of 32 or less is SiO
_2, GeO_2 and/or TiO_2. The cathode ray tube according to claim (1).
酸化物との化合物が、Bi_1_2SiO_2_0、B
i_1_2GeO_2_0および/またはBi_1_2
TiO_2_0である特許請求の範囲第(1)項記載の
陰極線管。(3) A compound of Bi_2O_3 and an oxide of a group IV element with an atomic number of 32 or less is Bi_1_2SiO_2_0, B
i_1_2GeO_2_0 and/or Bi_1_2
The cathode ray tube according to claim (1), which is TiO_2_0.
系水ガラスである特許請求の範囲第(1)項記載の陰極
線管。(4) The cathode ray tube according to claim (1), wherein the water glass is sodium-based water glass or potassium-based water glass.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61126764A JPH0731984B2 (en) | 1986-05-29 | 1986-05-29 | Cathode ray tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61126764A JPH0731984B2 (en) | 1986-05-29 | 1986-05-29 | Cathode ray tube |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62281240A true JPS62281240A (en) | 1987-12-07 |
JPH0731984B2 JPH0731984B2 (en) | 1995-04-10 |
Family
ID=14943346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61126764A Expired - Lifetime JPH0731984B2 (en) | 1986-05-29 | 1986-05-29 | Cathode ray tube |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0731984B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0215532A (en) * | 1988-07-04 | 1990-01-19 | Mitsubishi Electric Corp | Manufacture of color braun tube |
JPH04179026A (en) * | 1990-11-08 | 1992-06-25 | Mitsubishi Electric Corp | Manufacture of shadow mask |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61126766A (en) * | 1984-11-22 | 1986-06-14 | Toshiba Battery Co Ltd | Flat type cell |
-
1986
- 1986-05-29 JP JP61126764A patent/JPH0731984B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61126766A (en) * | 1984-11-22 | 1986-06-14 | Toshiba Battery Co Ltd | Flat type cell |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0215532A (en) * | 1988-07-04 | 1990-01-19 | Mitsubishi Electric Corp | Manufacture of color braun tube |
JPH04179026A (en) * | 1990-11-08 | 1992-06-25 | Mitsubishi Electric Corp | Manufacture of shadow mask |
Also Published As
Publication number | Publication date |
---|---|
JPH0731984B2 (en) | 1995-04-10 |
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