JPS62277723A - Formation of wsi2 - Google Patents
Formation of wsi2Info
- Publication number
- JPS62277723A JPS62277723A JP12158586A JP12158586A JPS62277723A JP S62277723 A JPS62277723 A JP S62277723A JP 12158586 A JP12158586 A JP 12158586A JP 12158586 A JP12158586 A JP 12158586A JP S62277723 A JPS62277723 A JP S62277723A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wsi2
- substrate
- film thickness
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910008814 WSi2 Inorganic materials 0.000 abstract description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002253 acid Substances 0.000 abstract description 2
- 238000010306 acid treatment Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract 3
- 230000008020 evaporation Effects 0.000 abstract 2
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 230000001934 delay Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
発明の詳細な説明
（産業上の利用分野）
本発明は半導体装置の配線や電極として用いるＷＳｉ２
の形成方法に関する。[Detailed Description of the Invention] Detailed Description of the Invention (Field of Industrial Application) The present invention relates to WSi2 used as wiring and electrodes of semiconductor devices.
The present invention relates to a method of forming.
（従来の技術）
近年、Ｓｉ集積回路を代表とする半導体装置において素
子寸法の微細化による高密度化及び高速化が計られてい
る。かかる微細化に伴って、従来より電極や配線として
多用されてきた多結晶Ｓｉや拡散層の抵抗の増大による
信号伝播の遅延等の問題が生じてきた。この問題を解決
する方法として、耐熱性に優れたＷＳｉ２を多結晶Ｓｉ
や拡散層の上部に形成して低抵抗化を実現する方法が提
案されている。(Prior Art) In recent years, efforts have been made to increase the density and speed of semiconductor devices, typically Si integrated circuits, by miniaturizing element dimensions. With such miniaturization, problems have arisen, such as delays in signal propagation due to increased resistance of polycrystalline Si and diffusion layers, which have conventionally been frequently used as electrodes and wiring. As a way to solve this problem, WSi2 with excellent heat resistance was replaced with polycrystalline Si.
A method has been proposed in which low resistance is achieved by forming the semiconductor layer on top of the diffusion layer.
従来、ＷＳｉ２の形成方法としては、ＷとＳｉとを同時
に蒸着した後、高温のアニールを行ってシリサイド形成
を行う方法、又はＳｉの表面にＷを蒸着した後、アニー
ルを行ってシリサイド形成を行う方法（熱アニール法）
等が行われている。Conventionally, WSi2 has been formed by depositing W and Si simultaneously and then performing high-temperature annealing to form silicide, or by depositing W on the surface of Si and then performing annealing to form silicide. Method (thermal annealing method)
etc. are being carried out.
（発明が解決しようとする問題点）
前記の従来の方法で形成されるＷＳ１２膜の電気抵抗は
、バルクの値に比して大きいという欠点がある。例えば
、ムラルカ（Ｓ、Ｐ、Ｍｕｒａｒｕｋａ）著シリサイヅ
フォープイエルエスアイアブリエイションズにューヨー
クアカテ゛ミックプレス、１９８３）誌（Ｓｉｌｉｃｉ
ｄｅｓ ｆｏｒ ＶＬＳＩ Ａｐｐｌｉｃａｔｉｏｎｓ
（、Ｎｅｗ ｙｏｒｋ ＡｃａｄｅｍｉｃＰｒｅｓｓ、
１９８３））に記載されている様に、ＷＳｉ２の場合
にはバルクの比抵抗が〜１２．５ｐΩでｍであるのに対
して、前記の方法で形成された膜の値は〜７ｏｐΩ・ｃ
ｍｍ嵩高。(Problems to be Solved by the Invention) The electrical resistance of the WS12 film formed by the above-mentioned conventional method is large compared to the bulk value. For example, see Silici, S.P. Muraruka, New York Academic Press, 1983.
des for VLSI Applications
(, New York Academic Press,
1983)), in the case of WSi2, the bulk resistivity is ~12.5 pΩ, m, whereas the value of the film formed by the above method is ~7 opΩ·c.
mm bulky.
従来の形成法によるＷＳｉ２膜では１０００人の膜厚を
用いた場合、シート抵抗は〜７０／口と高い値になり、
微細な絶縁ゲート電界効果トランジスターのゲートや配
線に応用する際には、従来法によった場合より小さな電
気抵抗のＷＳｉ２膜が必要である。When using a WSi2 film formed using the conventional formation method and using a film thickness of 1000 mm, the sheet resistance is as high as ~70/mm.
When applied to gates and interconnections of minute insulated gate field effect transistors, a WSi2 film with lower electrical resistance is required than when using conventional methods.
本発明の目的は、従来法で得られるＷＳｉ２膜の示す高
電気抵抗の問題点を解消した、低抵抗ＷＳｉ２の形成方
法を提供することにある。An object of the present invention is to provide a method for forming a low-resistance WSi2 film that solves the problem of high electrical resistance exhibited by WSi2 films obtained by conventional methods.
（問題点を解決するための手段）
本発明はＷとＳｉとを反応させてＷＳｉ２を形成する方
法において、少なくとも表面にＳｉ層を有した基板を８
５０℃以上の温度に加熱せしめた状態でＷの堆積を行っ
て、膜堆積と同時にシリサイド化反応を生じせしめるこ
とを特徴としたＷＳｉ２の形成方法である。(Means for Solving the Problems) The present invention provides a method for forming WSi2 by reacting W and Si, in which a substrate having at least a Si layer on the surface is
This method of forming WSi2 is characterized in that W is deposited under heating to a temperature of 50° C. or higher, and a silicidation reaction occurs simultaneously with film deposition.
（作用）
ｗｓ４２の電気抵抗を小さくするためには、低抵抗な結
晶相の結晶粒の成長を促すことが重要である。ＷＳｉ、
２の低抵抗な結晶相が得られる様な温度に基板加熱を行
ってＷを蒸着すれば、蒸着と同時に結晶粒の成長を促進
せしめた低抵抗な結晶相が得られる。(Function) In order to reduce the electrical resistance of ws42, it is important to promote the growth of crystal grains of a low resistance crystal phase. WSi,
If W is vapor-deposited by heating the substrate to a temperature at which a low-resistance crystal phase of No. 2 can be obtained, a low-resistance crystal phase that promotes the growth of crystal grains can be obtained at the same time as vapor deposition.
更に、第２図に示すように、（１００）面方位の単結晶
Ｓｉ基板を用いた時、膜形成時の基板温度を８５０℃以
上にすることによって基板垂直方向のＷＳｉ２（２００
）面方位のピークの他の面方位のＷＳｉ２のピークに対
する強度が粉末ＷＳｉ２の場合に比して、著しく大きく
なる。このことは、ＷＳｉ２がＳｉの結晶にエピタキシ
ャル成長する傾向が強くなることを示している。この作
用に上って結晶粒の成長は更に促進され、粒径が増加し
、より低抵抗なＷＳｉ２膜を形成することができる。ま
た（１００）面方位以外の単結晶Ｓｉ基板を用いても、
同様な傾向がいえる。Furthermore, as shown in Figure 2, when using a (100) single-crystal Si substrate, by setting the substrate temperature at 850°C or higher during film formation, the WSi2 (200)
) The intensity of the peak of the plane orientation with respect to the peak of WSi2 of other plane orientations is significantly larger than that of powder WSi2. This indicates that WSi2 has a strong tendency to epitaxially grow on Si crystals. Due to this effect, the growth of crystal grains is further promoted, the grain size increases, and a WSi2 film with lower resistance can be formed. Furthermore, even if a single crystal Si substrate with a plane other than the (100) orientation is used,
A similar trend can be seen.
（実施例）
第１図は本発明によっズＰ型（１００）面方位の単結晶
Ｓｉ基板１上にＷＳｉ：Ｊｉ ３を形成した工程を示す
。通常の酸洗浄を行った後、希釈弗酸処理により清浄表
面としたｐ型（１００）面方位の単結晶Ｓｉ基板１を原
着装置内で８５０℃から９５０℃の任意温度に加熱して
、第１図に示すように、前記Ｐ型Ｓｉ基板上にＷを蒸着
した。(Example) FIG. 1 shows the process of forming WSi:Ji 3 on a single-crystal Si substrate 1 having a p-type (100) plane orientation according to the present invention. After carrying out ordinary acid cleaning, a p-type (100)-oriented single crystal Si substrate 1 whose surface was cleaned by diluted hydrofluoric acid treatment was heated to an arbitrary temperature between 850°C and 950°C in a doping apparatus. As shown in FIG. 1, W was deposited on the P-type Si substrate.
４００人膜厚相当のＷを蒸着することにより、蒸着と同
時に膜厚約１０００人、比抵抗４０１１Ω・ｃｍのＷＳ
ｉ２膜３が形成された。By depositing W equivalent to a film thickness of 400 mm, a WS with a film thickness of approximately 1000 mm and a resistivity of 4011 Ω cm was simultaneously deposited.
An i2 film 3 was formed.
また、他の条件を上言己と同じにして、８００人膜厚相
当のＷを蒸着して膜厚約２０００人のＷＳｉ２膜３形成
したところ、その比抵抗は更に低くなり、〜２７）１Ω
・ａｍになった。In addition, when other conditions were the same as above and WSi2 film 3 was deposited to a thickness of about 2000 by depositing W equivalent to the thickness of 800, the resistivity was even lower, ~27) 1Ω.
・It became am.
また、ＳＯＩ構造の基板を用いても同様の効果がある。Further, a similar effect can be obtained by using a substrate having an SOI structure.
（発明の効果）
本発明によれば、低抵抗なＷＳｉ２膜を形成することが
できる。(Effects of the Invention) According to the present invention, a low resistance WSi2 film can be formed.
第１図は、本発明の方法によってＷＳｉ２膜を形成する
工程を示す断面模式図である。FIG. 1 is a schematic cross-sectional view showing the process of forming a WSi2 film by the method of the present invention.
Claims (1)
いて、少なくとも表面に単結晶Ｓｉ層を有した基板を８
５０℃以上の温度に加熱した状態でＷの堆積を行って、
膜堆積と同時にシリサイド化反応を生じせしめることを
特徴としたＷＳｉ＿２の形成方法。In the method of forming WSi_2 by reacting W and Si, a substrate having a single crystal Si layer on at least the surface is
Depositing W while heated to a temperature of 50°C or higher,
A method for forming WSi_2 characterized by causing a silicidation reaction simultaneously with film deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12158586A JPS62277723A (en) | 1986-05-26 | 1986-05-26 | Formation of wsi2 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12158586A JPS62277723A (en) | 1986-05-26 | 1986-05-26 | Formation of wsi2 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62277723A true JPS62277723A (en) | 1987-12-02 |
Family
ID=14814884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12158586A Pending JPS62277723A (en) | 1986-05-26 | 1986-05-26 | Formation of wsi2 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62277723A (en) |
-
1986
- 1986-05-26 JP JP12158586A patent/JPS62277723A/en active Pending
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