JPS62276705A - Dielectric ceramic composition - Google Patents

Dielectric ceramic composition

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Publication number
JPS62276705A
JPS62276705A JP61120584A JP12058486A JPS62276705A JP S62276705 A JPS62276705 A JP S62276705A JP 61120584 A JP61120584 A JP 61120584A JP 12058486 A JP12058486 A JP 12058486A JP S62276705 A JPS62276705 A JP S62276705A
Authority
JP
Japan
Prior art keywords
ceramic composition
dielectric ceramic
dielectric
dielectric constant
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61120584A
Other languages
Japanese (ja)
Inventor
謙治 河端
行雄 坂部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP61120584A priority Critical patent/JPS62276705A/en
Publication of JPS62276705A publication Critical patent/JPS62276705A/en
Pending legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 3、発明の詳細な説明 (産業上の利用分野) この発明は誘電体磁器組成物に関し、特にキュリ一点を
低温側へ移動させた誘電体磁器組成物に関する。
Detailed Description of the Invention 3. Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a dielectric ceramic composition, and particularly to a dielectric ceramic composition in which the Curie point is moved to the low temperature side.

(従来技術) 従来、この種の誘電体磁器組成物としては、BaTiO
3を主体とし、キュリ一点を低温側へ移動させる添加物
いわゆるシフタとしてのBaSnO3,CaZrOs、
 BaZr0iあるいはCaSnO3を添加した磁器組
成物が知られている。
(Prior Art) Conventionally, as this type of dielectric ceramic composition, BaTiO
BaSnO3, CaZrOs as a so-called shifter, which is an additive that moves one point of Curie to the lower temperature side.
Porcelain compositions containing BaZrOi or CaSnO3 are known.

(発明が解決しようとする問題点) このような磁器組成物は、たとえばコンデンサの小型・
薄板化にともなって、誘電率が大きく、結晶粒子の大き
さくグレインサイズ)が均一でかつ結晶粒子が微細であ
ることが要求されるようになってきた。
(Problems to be Solved by the Invention) Such ceramic compositions can be used, for example, in small capacitors and
As plates become thinner, it has become necessary to have a large dielectric constant, uniform crystal grain size, and fine crystal grains.

しかしながら、そのような従来の磁器組成物は、結晶の
大きさが5〜20μmと大きく、その結果として抗折力
および絶縁破壊電圧が小さくなるためこれらの要求を満
たすことはできなかった。
However, such conventional ceramic compositions cannot meet these requirements because the crystal size is as large as 5 to 20 μm, resulting in small transverse rupture strength and dielectric breakdown voltage.

それゆえに、゛この発明の主な目的は、誘電率が大きく
かつ結晶粒子が微細な誘電体磁器組成物を提供すること
である。
Therefore, the main object of the present invention is to provide a dielectric ceramic composition with a large dielectric constant and fine crystal grains.

(問題点を解決するための手段) この発明は、BaTiOs 100モル部に対して、C
e0tを2〜6モル部、旧20.を0.1〜4モル部、
およびZrO□を2〜6モル部含む、誘電体磁器組成物
である。
(Means for Solving the Problems) This invention provides that for 100 mol parts of BaTiOs, C.
2 to 6 mole parts of e0t, old 20. 0.1 to 4 mole parts,
and ZrO□ in a dielectric ceramic composition containing 2 to 6 mole parts.

(発明の効果) この発明によれば、キュリ一点が低温側へ移動されてお
り、かつ誘電率が大きく、結晶粒子が微細な誘電体磁器
組成物を得ることができる。そして、結晶粒子が微細で
あるため抗折力および絶縁破壊電圧が太き(なる。
(Effects of the Invention) According to the present invention, it is possible to obtain a dielectric ceramic composition in which the Curie point is moved to the low temperature side, the dielectric constant is large, and the crystal grains are fine. Since the crystal grains are fine, the transverse rupture strength and dielectric breakdown voltage are large.

この発明の上述の目的、その他の目的、特徴および利点
は、以下の実施例の詳細な説明から一層明らかとなろう
The above objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the following embodiments.

(実施例) 原料としてBaTiO3,Ce0z、 BizO3,Z
rO2およびMnCO2を、別表1の組成となるように
秤量して混合した。この混合物にポリビニルアルコール
からなるバインダを3重量%添加し、アルミナボールと
ともにポリエチレンポットに入れて16時間、湿式混合
し粉砕した。次いで、これを蒸発乾燥して造粒した後、
加圧して直径10龍、厚さ1.2龍の円板に形成し、1
330℃〜1390℃で2時間焼成して磁器素体を得た
。こうして得た円板状の磁器素体の両生面に銀ペースト
を塗布し、800℃で焼き付けて電極を形成し、試料と
した。
(Example) BaTiO3, Ce0z, BizO3,Z as raw materials
rO2 and MnCO2 were weighed and mixed to have the composition shown in Attached Table 1. To this mixture, 3% by weight of a binder made of polyvinyl alcohol was added, and the mixture was placed in a polyethylene pot together with alumina balls, wet-mixed for 16 hours, and pulverized. Next, after evaporating and drying this and granulating it,
Press and form into a disk with a diameter of 10 mm and a thickness of 1.2 mm.
A porcelain body was obtained by firing at 330°C to 1390°C for 2 hours. Silver paste was applied to both sides of the disc-shaped porcelain body thus obtained and baked at 800°C to form electrodes, which were used as samples.

このようにして作成した試料について、次に示す特性を
それぞれの条件や測定方法を用いて測定し、別表2の結
果を得た。
The following characteristics of the samples prepared in this way were measured using the respective conditions and measurement methods, and the results shown in Appendix 2 were obtained.

(1)焼成温度 (2)誘電率−周波数1にHz 、印加電圧IVr。(1) Firing temperature (2) Dielectric constant - frequency 1 to Hz, applied voltage IVr.

m、s 、温度20℃の条件下での値。m, s, values under the condition of temperature 20°C.

(3)誘電損失:周波数IKHz、印加電圧IVr、a
+、s 、温度20℃の条件下での誘電損失をtanδ
で表した値。
(3) Dielectric loss: frequency IKHz, applied voltage IVr, a
+, s, dielectric loss under the condition of temperature 20℃ is tanδ
The value expressed in .

(4)誘電率変化率:+20℃での誘電率の値基準とし
、−25℃および+85℃での誘電率の値における変化
を百分率で表した値。
(4) Permittivity change rate: A value expressed as a percentage of the change in dielectric constant value at -25°C and +85°C, using the dielectric constant value at +20°C as a standard.

(5)グレインサイズ:SEMによって磁器素体表面を
観察し求めた粒径の平均値。
(5) Grain size: average value of grain size determined by observing the surface of the porcelain body using SEM.

また、試料番号1の試料については、さらに抗折力およ
び絶縁破壊電圧を測定し、その比較例として、従来の組
成物であるBaTi0a −CaZrO3−BizO、
−MnO1系磁器で試料を作成し、前述の(2)。
In addition, for the sample No. 1, the transverse rupture strength and dielectric breakdown voltage were further measured, and as a comparative example, the conventional compositions BaTi0a-CaZrO3-BizO,
- A sample was prepared from MnO1-based porcelain, and the above-mentioned (2) was performed.

(3)、  (4)および(5)の各特性と抗折力およ
び絶縁破壊電圧とを測定し、これらの結果を別表3に合
わせて示した。
The properties (3), (4), and (5), transverse rupture strength, and dielectric breakdown voltage were measured, and the results are shown in Attached Table 3.

なお、別表1および別表2中で*を付したものは、この
発明の範囲外のものであり、それ以外はこの発明の範囲
内のものである。
In addition, those marked with * in Attached Tables 1 and 2 are outside the scope of this invention, and the others are within the scope of this invention.

この別表1および別表2から明らかなように、この発明
の誘電体磁器組成物における組成の限定理由は次の通り
である。
As is clear from Attached Tables 1 and 2, the reasons for limiting the composition of the dielectric ceramic composition of the present invention are as follows.

(1) Ce0tの添加が2モル部未満では、キュリ一
点が室温近くまで降下せず、誘電率が5000未満にな
りかつ誘電損失が1%を超えるので好ましくない(試料
番号15参照)。また、CeO□の添加が6モル部を超
えると、誘電率が5000未満になり好ましくない(試
料番号16参照)。
(1) If the amount of Ce0t added is less than 2 molar parts, the Curie point will not drop to near room temperature, the dielectric constant will be less than 5000, and the dielectric loss will exceed 1%, which is not preferable (see sample number 15). Moreover, if the addition of CeO□ exceeds 6 mol parts, the dielectric constant becomes less than 5000, which is not preferable (see sample number 16).

(2)Bit(hの添加が0.1モル部未満では、誘電
率が悪くなり好ましくない(試料番号11.試料番号1
2.試料番号13および試料番号14参照)、また、B
i2O3の添加が4モル部を超えると、誘電率が5oo
o未滴になり好ましくない(試料番号17参照)。
(2) If the addition of Bit (h is less than 0.1 mole part, the dielectric constant deteriorates, which is not preferable (Sample No. 11. Sample No. 1
2. (see sample number 13 and sample number 14), and B
When the addition of i2O3 exceeds 4 molar parts, the dielectric constant becomes 5oo
o It is undesirable as it will not drip (see sample number 17).

(3)ZrO□の添加が2モル部未満では、焼結しない
ので好ましくない(試料番号18参照)。また、ZrO
,の添加が6モル部を超えると、誘電率が5000未満
になり好ましくない(試料番号19参照)。
(3) Addition of less than 2 mole parts of ZrO□ is not preferable because sintering does not occur (see sample number 18). Also, ZrO
If the addition amount exceeds 6 mole parts, the dielectric constant becomes less than 5000, which is not preferable (see sample number 19).

別表2に示したように、この実施例によれば、誘電率が
5000以上と高く、誘電損失が1%以下の誘電体磁器
組成物が得られる。しかも、別表3に示したように、従
来のBaTi0,1−CaZrQz  BizO、−M
n02系の磁器組成物に比べてグレインサイズが1/1
0と著しく微細になり、その結果として、従来よりも抗
折力として62%および絶縁破壊電圧として57%の向
上が認められる、誘電体磁器組成物が得られる。
As shown in Attached Table 2, according to this example, a dielectric ceramic composition with a high dielectric constant of 5000 or more and a dielectric loss of 1% or less can be obtained. Moreover, as shown in Attached Table 3, conventional BaTi0,1-CaZrQz BizO,-M
Grain size is 1/1 compared to n02 series porcelain composition
As a result, a dielectric ceramic composition is obtained which has a transverse rupture strength of 62% and a dielectric breakdown voltage improved by 57% compared to the conventional one.

特許出願人 株式会社 村田製作所 代理人 弁理士 岡 1) 全 啓 (ほか1名)Patent applicant Murata Manufacturing Co., Ltd. Agent: Patent Attorney Oka 1) Zenhiro (1 other person)

Claims (1)

【特許請求の範囲】 1 BaTiO_3100モル部に対して、CeO_2
を2〜6モル部、 Bi_2O_3を0.1〜4モル部、およびZrO_2
を2〜6モル部含む、誘電体磁器組成物。 2 前記成分に対して、さらに添加物としてMnO_2
を0.01〜0.5重量%含有させた、特許請求の範囲
第1項記載の誘電体磁器組成物。
[Claims] 1 CeO_2 for 1100 mol parts of BaTiO_3
2 to 6 mol parts, 0.1 to 4 mol parts of Bi_2O_3, and ZrO_2
A dielectric ceramic composition containing 2 to 6 mole parts. 2 In addition to the above components, MnO_2 is added as an additive.
The dielectric ceramic composition according to claim 1, which contains 0.01 to 0.5% by weight of.
JP61120584A 1986-05-26 1986-05-26 Dielectric ceramic composition Pending JPS62276705A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61120584A JPS62276705A (en) 1986-05-26 1986-05-26 Dielectric ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61120584A JPS62276705A (en) 1986-05-26 1986-05-26 Dielectric ceramic composition

Publications (1)

Publication Number Publication Date
JPS62276705A true JPS62276705A (en) 1987-12-01

Family

ID=14789893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61120584A Pending JPS62276705A (en) 1986-05-26 1986-05-26 Dielectric ceramic composition

Country Status (1)

Country Link
JP (1) JPS62276705A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2632301A1 (en) * 1988-06-03 1989-12-08 Europ Composants Electron HIGH PERMITTIVITY CERAMIC COMPOSITION AND CAPACITOR USING THE SAME

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2632301A1 (en) * 1988-06-03 1989-12-08 Europ Composants Electron HIGH PERMITTIVITY CERAMIC COMPOSITION AND CAPACITOR USING THE SAME

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