JPS6227555B2 - - Google Patents
Info
- Publication number
- JPS6227555B2 JPS6227555B2 JP57186407A JP18640782A JPS6227555B2 JP S6227555 B2 JPS6227555 B2 JP S6227555B2 JP 57186407 A JP57186407 A JP 57186407A JP 18640782 A JP18640782 A JP 18640782A JP S6227555 B2 JPS6227555 B2 JP S6227555B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- thin film
- glass
- printing
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920005989 resin Polymers 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 description 11
- 238000007639 printing Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 4
- 239000000839 emulsion Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- -1 chalcogenide compound Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、アモルフアスシリコン太陽電池に利
用される、ガラスを基板とする薄膜素子の量産方
法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for mass producing thin film elements using glass as a substrate, which are used in amorphous silicon solar cells.
従来例の構成とその問題点
従来例は第１図に示す様にガラス基板１の上に
パツシベーシヨン樹脂５が各素子ごとに分離され
て塗布されている。７，８は電気端子である。素
子中央部のAA断面を第２図に示す。ガラス基板
上に形成した第一の電極２の上にアモルフアスシ
リコン、カルコゲナイド化合物半導体等の薄膜３
を堆積しその上に第２の電極４に形成し更にその
上にエポキシ樹脂等のパツシベーシヨン樹脂５を
塗布してある。パツシベーシヨン樹脂５は主に電
極２，４が薄膜３の防湿を機械的保護の役割を果
たし、太陽電池や光起電力素子の場合は電極４と
樹脂５が共に透明であるかあるいは電極２が透明
電極である必要がある。電極２，４は各々端子
７，８は最終的に持続されている。パツシベーシ
ヨン樹脂５は一般にスクリーン印刷で塗布し加熱
して硬化乾燥させる。塗布された樹脂のパターン
を目印にして樹脂が分離されたガラス面６，６′
等にダイヤモンドやタングステンカーバイド等の
刃先をもつカツテイングマシンで縦横にキズをつ
けた後キズをつけた面を外側にして折り曲げる様
に力を加えて割り、第１図の場合12個の素子が分
離できる。Structure of the Conventional Example and its Problems In the conventional example, as shown in FIG. 1, a passivation resin 5 is applied on a glass substrate 1 separately for each element. 7 and 8 are electrical terminals. Figure 2 shows the AA cross section of the central part of the device. A thin film 3 of amorphous silicon, chalcogenide compound semiconductor, etc. is formed on a first electrode 2 formed on a glass substrate.
A second electrode 4 is formed thereon, and a passivation resin 5 such as epoxy resin is applied thereon. In the passivation resin 5, the electrodes 2 and 4 mainly play the role of mechanically protecting the thin film 3 from moisture, and in the case of solar cells or photovoltaic elements, either the electrode 4 and the resin 5 are both transparent, or the electrode 2 is transparent. Must be an electrode. The terminals 7, 8 of the electrodes 2, 4, respectively, are finally sustained. The passivation resin 5 is generally applied by screen printing and cured and dried by heating. Glass surfaces 6, 6' where the resin is separated using the pattern of the applied resin as a guide
After making scratches in the vertical and horizontal directions using a cutting machine with a cutting edge made of diamond, tungsten carbide, etc., force is applied to bend the cut surface with the scratched side facing outward to break it, resulting in 12 elements in the case shown in Figure 1. Can be separated.
従来例の第一の欠点はカツテイング不良の多い
ことである。カツテイングマシンの刃先が少しで
も樹脂５にかかればその部分はガラスにキズがつ
かず折り曲げるとガラスが任意の形状に破損して
しまい不良品が多発する。 The first drawback of the conventional example is that there are many cutting defects. If the edge of the cutting machine touches the resin 5 even slightly, the glass will not be scratched in that area, but when bent, the glass will break into an arbitrary shape, resulting in many defective products.
パツシベーシヨン樹脂５は通常の印刷と異なり
厚みが20μ〜100μぐらいあり、スクリーン印刷
でパターンのボケを除去するのは困難である。ま
た硬化、乾燥のための加温によつて一時的に粘度
が低下し、６，６′の部分の間隔0.2〜0.5mmのス
リツトが部分的につながり易い。 Unlike ordinary printing, the passivation resin 5 has a thickness of about 20 to 100 microns, and it is difficult to remove pattern blurring by screen printing. Furthermore, the viscosity temporarily decreases due to heating for curing and drying, and the slits at 0.2 to 0.5 mm in the 6 and 6' portions tend to be partially connected.
第二の欠点は、印刷機のスクリーンが洗浄の時
に破損しやすいことである。印刷用の樹脂５は常
温でも１時間〜６時間で硬化が乾燥がはじまるた
め定期的に溶剤でふき取り洗浄する必要がある。
印刷用スクリーンは上記６，６′の0.2〜0.5mmの
スリツトに対応して乳剤の巾が小さい部分がある
ため洗浄の時に乳剤がメツシユからはがれ易い。 A second disadvantage is that the printing press screen is easily damaged during cleaning. The printing resin 5 begins to harden and dry in 1 to 6 hours even at room temperature, so it must be periodically wiped off and cleaned with a solvent.
Since the printing screen has a portion where the width of the emulsion is small corresponding to the slits 6 and 6' of 0.2 to 0.5 mm, the emulsion is easily peeled off from the mesh during cleaning.
第三の欠点は、薄膜３のパターンと樹脂５のパ
ターンのズレによる耐湿信頼性の低下である。ガ
ラス基板は外寸のバラツキが大きく、薄膜とパツ
シベーシヨン樹脂の印刷時にそれぞれ位置ズレす
ると薄膜３の端部が樹脂５からはみ出て露出し、
耐湿信頼性が低下する。 The third drawback is a decrease in moisture resistance reliability due to misalignment between the pattern of the thin film 3 and the pattern of the resin 5. Glass substrates have large variations in external dimensions, and if the positions of the thin film and the passivation resin are misaligned during printing, the edge of the thin film 3 will protrude from the resin 5 and be exposed.
Moisture resistance reliability decreases.
発明の目的
本発明は、上記従来例の三つの欠点を解決し、
ガラスカツテイング時の不良がほとんど無く、樹
脂を塗布するスクリーン印刷機のスクリーンの寿
命が３倍以上長持ちし、印刷の位置ズレによる素
子の耐湿然の低下を防ぐことができる。Purpose of the invention The present invention solves the three drawbacks of the above conventional example,
There are almost no defects during glass cutting, the life of the screen of the screen printing machine that applies the resin is more than three times longer, and it is possible to prevent the moisture resistance of the element from deteriorating due to misalignment of printing.
発明の構成
本発明は、硬質のパツシベーシヨン樹脂を各素
子ごとに分離せず連続して印刷し、樹脂を塗布し
た面と反対のガラス面にキズをつけてガラスと樹
脂を同時にカツテイングし、複数個の薄膜素子を
分離する方法である。Structure of the Invention The present invention involves printing a hard passivation resin continuously without separating each element, scratching the glass surface opposite to the resin-applied surface, and cutting the glass and resin at the same time. This is a method for separating thin film elements.
実施例の説明
第３図、第４図に本発明による実施例を示す。
樹脂３はエポキシ樹脂、シリコン樹脂等の耐湿性
に効果のある硬質（望しくはシヨア硬度80以上）
の樹脂を用いる。アモルフアスシリコンを用いる
太陽電池および光起電力素子の場合、0.5mm〜１
mm厚のガラス基板１の上にITO（インジウム・テ
イン・オキサイド）、SnO2等の透明電極２を電子
ビーム蒸着やスパツタリングで約500Å〜1500Å
形成し、その上にシランガス中のプラズマCVD
によつてＰ層、ｉ層、Ｎ層の三層から成る半導体
薄膜３を約3500Å〜5000Å堆積する。次に、アル
ミニウム、ニツケル、クロム、チタン等の金属を
真空蒸着して電極４を形成し、最後に硬質の樹脂
５をスクリーン印刷した後硬化乾燥させる。カツ
テイングは樹脂５を塗布した反対側のガラス面
９，９′の部分にカツテイングマシンでキズをつ
け、ガラス１と硬質の樹脂５を同時に割ることが
できる。従つて不良がほとんど発生しない。樹脂
が軟質の場合は割れにくく、樹脂のはく離が生じ
易い。エポキシ樹脂の場合、顔料の種類によつて
硬度と密着力が変わり、基板との密着力が強く硬
度の大きいものとして、酸化鉄（ベンガラ）やカ
ーボンを顔料に用いたアミン系エポキシ樹脂で良
い結果が得られた。本発明の様に樹脂を塗布する
面と反対のガラス面にキズをつける場合、ガラス
基板１を通して薄膜３のパターンが見えるため、
その中央部にカツテイングマシンのカツターヘツ
ドを顕微鏡を用いてセツトすることができ、従来
例の様なカツテイングや印刷の位置ズレによる耐
湿信頼性の低下は起こらない。第３図の実施例で
分かるように樹脂５をスクリーン印刷する時のス
クリーンには巾のせまい乳剤パターンが無いため
洗浄によつて乳剤がはく離することがない。従つ
て従来例に比べスクリーンが約３倍長持ちする。
スクリーン印刷の条件設定も細かいスリツトパタ
ーンが無いため容易である。DESCRIPTION OF EMBODIMENTS FIGS. 3 and 4 show embodiments of the present invention.
Resin 3 is a hard material that is effective in moisture resistance, such as epoxy resin or silicone resin (preferably Shore hardness of 80 or higher)
resin is used. For solar cells and photovoltaic devices using amorphous silicon, 0.5 mm to 1
A transparent electrode 2 made of ITO (indium tein oxide), SnO 2 , etc. is formed on a glass substrate 1 with a thickness of about 500 Å to 1500 Å by electron beam evaporation or sputtering.
Form and plasma CVD in silane gas on it
A semiconductor thin film 3 consisting of three layers, a P layer, an i layer, and an N layer, is deposited to a thickness of approximately 3500 Å to 5000 Å. Next, metals such as aluminum, nickel, chromium, and titanium are vacuum-deposited to form electrodes 4, and finally, hard resin 5 is screen printed and then hardened and dried. In cutting, a cut is made using a cutting machine on the glass surfaces 9, 9' on the opposite side to which the resin 5 is applied, and the glass 1 and the hard resin 5 can be broken at the same time. Therefore, almost no defects occur. If the resin is soft, it is difficult to break and peeling of the resin is likely to occur. In the case of epoxy resins, the hardness and adhesion vary depending on the type of pigment, and good results are obtained with amine-based epoxy resins that use iron oxide (red iron oxide) or carbon as pigments, as they have strong adhesion to the substrate and high hardness. was gotten. When scratching the glass surface opposite to the surface to which the resin is applied as in the present invention, the pattern of the thin film 3 is visible through the glass substrate 1.
The cutter head of the cutting machine can be set in the center using a microscope, and moisture resistance reliability does not deteriorate due to misalignment of cutting or printing as in the conventional example. As can be seen in the embodiment shown in FIG. 3, since there is no narrow emulsion pattern on the screen when the resin 5 is screen printed, the emulsion does not peel off during washing. Therefore, the screen lasts about three times longer than the conventional example.
Setting conditions for screen printing is also easy because there is no fine slit pattern.
発明の効果
本発明によれば、ガラス基板のカツテイング不
良が発生せず、樹脂の印刷が容易でスクリーンの
寿命が長く、素子の耐湿信頼性が低下することが
ない。Effects of the Invention According to the present invention, cutting defects of the glass substrate do not occur, resin printing is easy, the life of the screen is long, and the moisture resistance reliability of the device does not deteriorate.
第１図は従来技術を説明する為の多素子形成板
の平面図、第２図は第１図の断面図、第３図は本
発明の製造法を説明する為の多素子形成板の平面
図、第４図は第３図の断面図である。
１……ガラス基板、２，４……電極、３……薄
膜、５……樹脂、７，８……電気端子、９，９′
……カツトするガラス面。
Fig. 1 is a plan view of a multi-element forming plate for explaining the prior art, Fig. 2 is a sectional view of Fig. 1, and Fig. 3 is a plan view of a multi-element forming plate for explaining the manufacturing method of the present invention. FIG. 4 is a sectional view of FIG. 3. 1... Glass substrate, 2, 4... Electrode, 3... Thin film, 5... Resin, 7, 8... Electric terminal, 9, 9'
...Glass surface to cut.
Claims (1)
その上に連続した硬質のパツシベーシヨン樹脂を
塗布し硬化させた後、前記ガラス基板の前記樹脂
塗布面と対抗する面にキズをつけて前記ガラス基
板と樹脂を同時に割る薄膜素子の製造法。1 Forming multiple thin film elements on a glass substrate,
A method for manufacturing a thin film element in which a continuous hard passivation resin is applied thereon and cured, and then a surface of the glass substrate opposite to the resin-coated surface is scratched to simultaneously break the glass substrate and the resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57186407A JPS5975680A (en) | 1982-10-22 | 1982-10-22 | Manufacture of thin film element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57186407A JPS5975680A (en) | 1982-10-22 | 1982-10-22 | Manufacture of thin film element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5975680A JPS5975680A (en) | 1984-04-28 |
| JPS6227555B2 true JPS6227555B2 (en) | 1987-06-15 |
Family
ID=16187867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57186407A Granted JPS5975680A (en) | 1982-10-22 | 1982-10-22 | Manufacture of thin film element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5975680A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0361357U (en) * | 1989-10-17 | 1991-06-17 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5032589A (en) * | 1973-06-28 | 1975-03-29 | ||
| JPS58218179A (en) * | 1982-06-11 | 1983-12-19 | Sharp Corp | Thin film solar battery |
-
1982
- 1982-10-22 JP JP57186407A patent/JPS5975680A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5032589A (en) * | 1973-06-28 | 1975-03-29 | ||
| JPS58218179A (en) * | 1982-06-11 | 1983-12-19 | Sharp Corp | Thin film solar battery |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5975680A (en) | 1984-04-28 |
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