JPS62272530A - Mask for transferring photoelectron - Google Patents
Mask for transferring photoelectronInfo
- Publication number
- JPS62272530A JPS62272530A JP61116411A JP11641186A JPS62272530A JP S62272530 A JPS62272530 A JP S62272530A JP 61116411 A JP61116411 A JP 61116411A JP 11641186 A JP11641186 A JP 11641186A JP S62272530 A JPS62272530 A JP S62272530A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric
- substance
- gallium arsenide
- photoelectron
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 29
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 6
- 239000011733 molybdenum Substances 0.000 claims abstract description 6
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 6
- 239000010937 tungsten Substances 0.000 claims abstract description 6
- QHRPVRRJYMWFKB-UHFFFAOYSA-N [Sb].[Cs] Chemical compound [Sb].[Cs] QHRPVRRJYMWFKB-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 239000003870 refractory metal Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- LZDVDTNBLCLMGQ-UHFFFAOYSA-N cesium telluride Chemical compound [Cs][Te][Cs] LZDVDTNBLCLMGQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔概要〕
特定の結晶方位を有する光電物質、例えば、ガリウムヒ
素、ガリウムヒ素リン、シリコン、アンチモンセシウム
等の半導体等の単結晶体の一部領域に非光電物質の薄膜
を形成して構成された光電子転写用光電マスクである。[Detailed Description of the Invention] 3. Detailed Description of the Invention [Summary] Photoelectric material having a specific crystal orientation, for example, a part of a single crystal such as a semiconductor such as gallium arsenide, gallium arsenide phosphide, silicon, antimony cesium, etc. This is a photoelectric mask for photoelectronic transfer, which is constructed by forming a thin film of a non-photoelectric material on a region.
本発明は光電子転写用マスクの改良に関する。 The present invention relates to improvements in photoelectronic transfer masks.
特に、その安定性と一様性とを向上する改良に関する。In particular, it relates to improvements that improve its stability and uniformity.
半導体装置の製造方法においては、微細パターンを転写
するためリソグラフィー法が使用されるが、このリソグ
ラフィー法には一般にマスクが必要である。このマスク
としては、従来、ガラス等の基板上にクローム等の不透
光性物質の薄膜を形成し、その上にレジスト膜を形成し
、フォトマスクを介してこのレジスト膜を霧光した後現
像してレジスト膜よりなるエツチングマスクを形成し、
このエツチングマスクを使用してクローム等の不透光性
物質をエツチングして製造していた。In a method of manufacturing a semiconductor device, a lithography method is used to transfer a fine pattern, but this lithography method generally requires a mask. Conventionally, this mask is made by forming a thin film of a non-light-transmitting substance such as chrome on a substrate such as glass, forming a resist film on top of the thin film, exposing the resist film to light through a photomask, and then developing it. to form an etching mask made of a resist film,
This etching mask was used to etch non-transparent materials such as chrome.
か＼る光露光を使用して製造されるマスクにあっては、
フランホーファー回折の影響を避は難く、解像力や精度
に限界があった。For masks manufactured using such light exposure,
It was difficult to avoid the effects of Fraunhofer diffraction, and there were limits to resolution and accuracy.
そこで、電子線をもって露光する電子線露光法が開発さ
れた。Therefore, an electron beam exposure method was developed in which exposure is performed using an electron beam.
この電子線露光法の一つとして、光電転写法が開発され
た。この光電転写法においては、光電効果を有する光電
物質をもって形成されたパターンを有する光電マスクが
使用される。かかる光電マスクに光を照射して、光電物
質のみから（光電物質をもって構成されたパターンの領
域のみから）光電子を射出させ、光電物質をもって形成
されたパターン状に電子線を射出してパターン状に露光
するものである。A photoelectric transfer method has been developed as one of these electron beam exposure methods. In this photoelectric transfer method, a photoelectric mask having a pattern formed of a photoelectric material having a photoelectric effect is used. The photoelectric mask is irradiated with light to emit photoelectrons only from the photoelectric material (only from the area of the pattern made up of the photoelectric material), and an electron beam is emitted in the pattern formed by the photoelectric material to form a pattern. It is something that is exposed to light.
この光電転写法において必須の光電マスクは。The photoelectric mask is essential in this photoelectric transfer method.
従来、パターニングした基板上に沃化セシュウム等の光
電物質を薄く蒸着したり、基板に蒸着した光電物質薄膜
に直接バターニングしたりして作られていた。。Conventionally, photoelectric materials such as cesium iodide are deposited thinly on a patterned substrate, or by direct patterning on a thin film of photoelectric material deposited on a substrate. .
ところが、か＼る光電マスクにあっては、蒸着膜が均一
に形成されにくく、また、異物も付着しやすく、要する
に一様性がなく、その結果、転写像に一様性がないとい
う欠点があり、また、蒸着膜と基板との結合が不十分で
あり、光やイオンの照射に曝されると、光電物質が容易
に剥離し。However, such photoelectric masks have the drawback that the deposited film is difficult to form uniformly, and foreign matter is also likely to adhere, resulting in a lack of uniformity in the transferred image. Also, the bond between the deposited film and the substrate is insufficient, and the photoelectric material easily peels off when exposed to light or ion irradiation.
光電マスクとしての安定性が劣るという欠点があった。The drawback was that the stability as a photoelectric mask was poor.
本発明の目的は、この欠点を解消することにあり、一様
性と安定性のすぐれた光電子転写用光電マスクを提供す
ることにある。An object of the present invention is to eliminate this drawback, and to provide a photoelectric mask for photoelectronic transfer with excellent uniformity and stability.
上記の目的を達成するために本発明が採った手段は、特
定の結晶方位を有する光電物質の単結晶体の一部領域に
非光電物質の一膜を形成して光電子転写用光電マスクを
構成することにある。The means taken by the present invention to achieve the above object is to construct a photoelectric mask for photoelectronic transfer by forming a film of a non-photoelectric material on a partial region of a single crystal of a photoelectric material having a specific crystal orientation. It's about doing.
光電物質としては半導体例えばガリウムヒ素、カリウム
ヒ素リン、シリコン、セシウムテルル。Photoelectric materials include semiconductors such as gallium arsenide, potassium arsenide phosphide, silicon, and cesium tellurium.
アンチモンセシウム等がすぐれており、非光電物質とし
てはタングステン、タンタル、モリブデン等のリフラク
トリメタルがすぐれており、特定の結晶方位は使用され
る光電物質によって異なるが、上記のガリウムヒ素の場
合は（１００）面である。Antimony cesium etc. are excellent, and as non-photoelectric materials, refractory metals such as tungsten, tantalum, and molybdenum are excellent.The specific crystal orientation varies depending on the photoelectric material used, but in the case of the above-mentioned gallium arsenide ( 100) surface.
光電物質の単結晶体はバルク結晶でも、また。Single crystals of photoelectric materials can also be bulk crystals.
他の基板上にＭＢＥ法等を使用して形成された結晶膜で
もよい、バルク結晶の場合は反射型がよく、薄い結晶膜
の場合は透過型が望ましい。A crystal film formed on another substrate using the MBE method or the like may be used. In the case of a bulk crystal, a reflection type is preferable, and in the case of a thin crystal film, a transmission type is preferable.
光電物質のバルク結晶を使用する場合は一様性の問題も
安定性の問題もち然に解消され、結晶膜の場合も、結晶
膜と基板との化学的結合は強固であるから、安定性の問
題は解消される。また、一様性の問題も、従来技術に比
し、はるかにすぐれている。When bulk crystals of photoelectric materials are used, problems of uniformity and stability are immediately solved, and in the case of crystalline films, the chemical bond between the crystalline film and the substrate is strong, so stability problems are easily solved. The problem will be resolved. Also, the problem of uniformity is much better than in the prior art.
単結晶の場合、励起光の波長を適当に選べば、光電子を
面に垂直方向に高い確率をもって放出することができ、
光電子ビームの輝度を向上しうる。In the case of a single crystal, if the wavelength of the excitation light is appropriately selected, photoelectrons can be emitted with high probability in the direction perpendicular to the surface.
The brightness of the photoelectron beam can be improved.
以下１図面を参照しつ〜、本発明の一実施例に係る光電
子転写用マスクについてさらに説明する。A photoelectronic transfer mask according to an embodiment of the present invention will be further described below with reference to one drawing.
第２図参照
反射型の場合厚さは任意であるが、透過型の場合は約１
０００人の厚さに成長させ１表面の結晶方位は（１００
）であるガリウムヒ素の単結晶基板ｌ上に、真空蒸着法
またはスパッタ法を使用して。For reflective type, the thickness is arbitrary, but for transmissive type, the thickness is about 1
The crystal orientation of one surface is (100
) using vacuum evaporation or sputtering on a single crystal substrate of gallium arsenide.
タングステン、タンタル、モリブデンの膜２を厚さ数百
〜数千人に形成する。A film 2 of tungsten, tantalum, and molybdenum is formed to a thickness of several hundred to several thousand.
第１図参照
リソグラフィー法を使用して、タングステン、タンタル
、モリブデンの膜２を所望のパターンにパターニングし
て、光電マスクを製造する。A photoelectric mask is manufactured by patterning a film 2 of tungsten, tantalum, and molybdenum into a desired pattern using a lithography method (see FIG. 1).
以上の工程をもって製造された光電マスクは。The photoelectric mask is manufactured using the above process.
一様性、安定性がすぐれている他に、励起光の波長を５
０００人より長波長に選ぶことにより光電子が面に垂直
な方向に高い確率をもって放出されて輝度が高い、また
、適当な温度制御がなされ＼ば、結晶面は高真空中にお
いても、安定であり、寿命も延びる。In addition to excellent uniformity and stability, the wavelength of the excitation light can be adjusted to 5
By choosing a wavelength longer than 0,000, photoelectrons are emitted with a high probability in the direction perpendicular to the surface, resulting in high brightness. Also, if appropriate temperature control is performed, the crystal surface is stable even in a high vacuum. , lifespan is also extended.
以上説明せるとおり、本発明に係る光電子転写用マスク
は、特定の結晶方位を有する光電物質、例えば、ガリウ
ムヒ素、ガリウムヒ素リン、シリコン、アンチモンセシ
ウム等の半導体等の単結晶体の一部領域に非光電物質の
薄膜を形成して構成されているので、一様性、安定性が
すぐれており、また、光電子が面に垂直な方向に高い確
率をもって放出されて輝度が高い、また、適当な温度制
御がなされ−ば、結晶面は高真空中においても、安定で
あり、寿命も延びる。As explained above, the photoelectron transfer mask according to the present invention can be applied to a partial region of a photoelectric material having a specific crystal orientation, such as a single crystal of a semiconductor such as gallium arsenide, gallium arsenide phosphide, silicon, or antimony cesium. Since it is composed of a thin film of non-photoelectric material, it has excellent uniformity and stability, and photoelectrons are emitted with a high probability in the direction perpendicular to the surface, resulting in high brightness. If the temperature is controlled, the crystal plane will be stable even in high vacuum, and the lifetime will be extended.
第１図は１本発明の一実施例に係る光電子転写用マスク
の断面図である。
第２図は、本発明の一実施例に係る光電子転写用マスク
の製造工程図である。
１・・・単結晶基板、
２・争・タングステン、タンタル、モリブデンの膜。
−Ｊ、FIG. 1 is a sectional view of a photoelectronic transfer mask according to an embodiment of the present invention. FIG. 2 is a manufacturing process diagram of a photoelectronic transfer mask according to an embodiment of the present invention. 1...Single crystal substrate, 2.Tungsten, tantalum, molybdenum film. -J,
Claims (1)
位は特定の方位である基板上の一部領域に非光電物質の
薄膜が形成されてなることを特徴とする光電子転写用マ
スク。 ［２］前記光電物質は半導体であり前記非光電物質はリ
フラクトリメタルであることを特徴とする特許請求の範
囲第１項記載の光電子転写用マスク。 ［３］前記半導体は、ガリウムヒ素、ガリウムヒ素リン
、シリコン、セシウムテルル、および、アンチモンセシ
ウムの群から選ばれたものであり、前記リフラクトリメ
タルは、タングステン、タンタル、および、モリブデン
の群から選ばれたものであり、前記特定の結晶方位は、
〔１００〕面であることを特徴とする特許請求の範囲第
２項記載の光電子転写用マスク。[Claims] [1] A thin film of a non-photoelectric substance is formed in a partial region on a substrate, which is made of a single crystal of a photoelectric substance, and the crystal orientation of the single crystal is in a specific direction. Photoelectronic transfer mask. [2] The photoelectric transfer mask according to claim 1, wherein the photoelectric material is a semiconductor and the non-photoelectric material is a refractory metal. [3] The semiconductor is selected from the group of gallium arsenide, gallium arsenide phosphide, silicon, cesium tellurium, and antimony cesium, and the refractory metal is selected from the group of tungsten, tantalum, and molybdenum. and the specific crystal orientation is
The photoelectronic transfer mask according to claim 2, which has a [100] plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61116411A JPS62272530A (en) | 1986-05-20 | 1986-05-20 | Mask for transferring photoelectron |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61116411A JPS62272530A (en) | 1986-05-20 | 1986-05-20 | Mask for transferring photoelectron |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62272530A true JPS62272530A (en) | 1987-11-26 |
Family
ID=14686397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61116411A Pending JPS62272530A (en) | 1986-05-20 | 1986-05-20 | Mask for transferring photoelectron |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62272530A (en) |
-
1986
- 1986-05-20 JP JP61116411A patent/JPS62272530A/en active Pending
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