JPS6227156B2 - - Google Patents
Info
- Publication number
- JPS6227156B2 JPS6227156B2 JP54170993A JP17099379A JPS6227156B2 JP S6227156 B2 JPS6227156 B2 JP S6227156B2 JP 54170993 A JP54170993 A JP 54170993A JP 17099379 A JP17099379 A JP 17099379A JP S6227156 B2 JPS6227156 B2 JP S6227156B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- metal
- mask member
- resist
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 238000000992 sputter etching Methods 0.000 claims description 13
- 238000010849 ion bombardment Methods 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 5
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 5
- 229910002113 barium titanate Inorganic materials 0.000 description 5
- 229910000859 α-Fe Inorganic materials 0.000 description 5
- -1 photoceram Chemical class 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】
本発明はイオンエツチング用金属のマスクの形
成方法に係り、とくに磁気デイスク装置の磁気ヘ
ツドブロツク等、フオトセラム、チタン酸バリウ
ム、フエライト等の金属酸化物に対するイオンエ
ツチングを行う場合に適用して好適なイオンエツ
チング用金属マスクの形成方法に係る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a metal mask for ion etching, particularly when performing ion etching on metal oxides such as photoceram, barium titanate, ferrite, etc., such as magnetic head blocks of magnetic disk devices. The present invention relates to a method of forming a metal mask for ion etching which is suitable for application.
イオン・エツチングとはAr+等のイオンを電界
により加速し被加工材をターゲツトとして衝突さ
せ、これによつて被加工材をエツチングする加工
法であり、被加工材を所望の形状に加工するため
に、Ti等よりなるマスク部材を被加工上に形成
してイオン衝撃によるエツチングを防止するもの
である。 Ion etching is a processing method in which ions such as Ar + are accelerated by an electric field and collide with the workpiece as a target, thereby etching the workpiece. In addition, a mask member made of Ti or the like is formed on the workpiece to prevent etching due to ion bombardment.
さて近年、磁気デイスク装置に対する記録密度
の向上が一層強く望まれ、これに応えるために磁
気ヘツドを狭トラツク化し、また磁気ヘツドが受
ける揚力の調整を行う磁気ヘツドのスライグの加
工を極めて精密に行う必要が生じている。 Now, in recent years, there has been a strong desire to improve the recording density of magnetic disk devices, and in order to meet this demand, the magnetic head has been made to have a narrower track, and the slig of the magnetic head, which adjusts the lifting force that the magnetic head receives, has been processed with extreme precision. A need has arisen.
この加工は例えば深さが４μｍ〜８μｍ、幅が
数μｍ〜数百μｍの溝をを形成するものであり、
機械加工を行うには寸法が小さ過ぎると共に量産
性に欠け、またレーザー加工によつてもコスト等
の点から量産性に欠けると同時に精度が悪い。更
に、エツチング液を使用した化学的エツチングを
行うには深が大であるために所定のレジストパタ
ーンに正確に合致する加工を行うことが困難であ
る。 This process forms, for example, a groove with a depth of 4 μm to 8 μm and a width of several μm to several hundred μm.
The dimensions are too small for machining, and it lacks mass productivity, and laser processing also lacks mass productivity and accuracy due to costs and other factors. Furthermore, since the depth is too large for chemical etching using an etching solution, it is difficult to perform processing that accurately matches a predetermined resist pattern.
これに対して、イオン・エツチングを行うなら
ば、エツチングがマスクに対し垂直な方向、すな
わち深さ方向に進み横方向には殆んど進行しない
ため、精密な加工が可能であり、量産性も良い。 On the other hand, if ion etching is used, the etching progresses in a direction perpendicular to the mask, that is, in the depth direction, and hardly progresses in the lateral direction, making it possible to perform precise processing and improve mass production. good.
しかしながら、イオン・エツチングの際に被加
工材およびマスク部材がイオン衝撃を受けて加熱
され、熱膨張係数の違い等や温度分布の違い等か
ら被加工材とマスク部材との界面に歪応力が形成
され、マスク部材が剥離する問題がしばしば生じ
た。また、好適なマスク部材としてイオン衝撃に
耐え得る強さ、換言すればスパツタ率の小さな周
知部材である。Tiを使用する場合には、被加工
材であるフオトセラム，チタン酸バリウム，フエ
ライト等に対し選択エツチングを行い得るエツチ
ング液として適当なものがないという不便があ
る。 However, during ion etching, the workpiece and mask member are heated by ion bombardment, and strain stress is formed at the interface between the workpiece and mask member due to differences in thermal expansion coefficients and temperature distribution. This often caused the problem of the mask member peeling off. Further, as a suitable mask member, it is a well-known member that has the strength to withstand ion bombardment, in other words, has a small spatter rate. When using Ti, there is an inconvenience that there is no suitable etching solution that can perform selective etching on photoceram, barium titanate, ferrite, etc., which are the workpiece materials.
更に、選択エツチングを行わなくてもよいリフ
トオフ法を適用してマスク部材（Ti）を形成す
る場合には、MR―83（東京応化製）を使用す
ると、レジスト剥離液がアルカリ性であるために
磁気ヘツド・ブロツクの接着に使用されるガラス
を侵する不都合があるのみならず、レジストの下
地に相当するフオトセラム，チタン酸バリウム，
フエライト等の光反射率が小さいためにレジスト
の切れ（不要レジストを有機溶剤で溶解除去する
処理のこと）が悪く精密なパターンの形成が困難
である。 Furthermore, when forming the mask member (Ti) by applying the lift-off method that does not require selective etching, it is recommended to use MR-83 (manufactured by Tokyo Ohka) because the resist stripping liquid is alkaline and therefore magnetic. Not only does it have the disadvantage of corroding the glass used for adhering the head block, but photoceram, barium titanate, which is the base for the resist,
Due to the low light reflectance of ferrite and the like, resist cutting (a process in which unnecessary resist is dissolved and removed using an organic solvent) is difficult, making it difficult to form precise patterns.
従つて、本発明は上記諸問題を解決することを
目的としており、この目的は本発明においては、
金属酸化物よりなる被加工材に対してイオン・エ
ツチングを行うにあたり被加工材上にイオン衝撃
を遮断する金属製のマスク部材を形成するイオ
ン・エツチング用金属マスクの形成方法におい
て、被加工材上にAl又はAl合金又はCr又は他の
酸素に対する親和性が大きな金属よりなる密着層
を成膜し、しかる後にリフトオフ法に従つて金属
製のマスク部材を形成することによつて達成され
るが、以下その一実施例を図面に従つて詳細に説
明する。 Therefore, the purpose of the present invention is to solve the above-mentioned problems, and this purpose is to:
In a method for forming a metal mask for ion etching, which forms a metal mask member that blocks ion bombardment on the workpiece when performing ion etching on the workpiece made of metal oxide, This is achieved by forming an adhesion layer made of Al or Al alloy, Cr, or other metal with a high affinity for oxygen, and then forming a metal mask member according to the lift-off method. One embodiment will be described in detail below with reference to the drawings.
第１図〜第５図は本発明に係る金属マスクの形
成方法を工程順に示す工程図であり、１はフオト
セラム，チタン酸バリウム，フエライト等の金属
酸化物よりなる被加工材、２はAl，Al合金又は
Cr等よりなる密着層、４，４ａはTi等よりなる
マスク形成部材である。 FIGS. 1 to 5 are process diagrams showing the method for forming a metal mask according to the present invention in order of steps. 1 is a workpiece made of a metal oxide such as photoceram, barium titanate, ferrite, etc.; 2 is a workpiece made of a metal oxide such as photoceram, barium titanate, ferrite, etc.; Al alloy or
The adhesion layer 4, 4a is made of Cr or the like, and mask forming members are made of Ti or the like.
本実施例においては、まず第１図に示す被加工
材上に第２図に示すように密着層２を500Å程度
の厚さに成膜する。次に、AZ1350J（シツプレー
社製）レジストをスピンコートし、プレベイク処
理を行い、所望パターンに従つて露光・現像を行
い、そしてポストベイク処理を行うことによつて
第３図に示すように所望パターンに従つたレジス
ト層３を形成する。上記露光においては、レジス
トの下地が金属製の密着層であり反射率が高いた
め精密な露光が行えると共に、現像に際しても不
要レジストの除去が容易に行われる。なお、第３
図に示すレジスト層３の厚さは次工程で形成する
金属マスク４，４ａの厚さより大である。 In this embodiment, first, as shown in FIG. 2, an adhesive layer 2 is formed to a thickness of about 500 Å on the workpiece shown in FIG. Next, AZ1350J (manufactured by Shippray) resist is spin-coated, pre-baked, exposed and developed according to the desired pattern, and post-baked to form the desired pattern as shown in Figure 3. A resist layer 3 is formed accordingly. In the above exposure, since the base of the resist is a metal adhesive layer and has a high reflectance, precise exposure can be performed, and unnecessary resist can be easily removed during development. In addition, the third
The thickness of the resist layer 3 shown in the figure is greater than the thickness of the metal masks 4, 4a formed in the next step.
すなわち、次にTi等の金属よりなるマスク部
材４，４ａをレジスト層３の厚さより薄く第４図
に示すように形成する。 That is, next, mask members 4, 4a made of metal such as Ti are formed to be thinner than the thickness of the resist layer 3, as shown in FIG.
すると、レジスト層３の上に位置するマスク部
材４とレジスト層３と同一面に位置するマスク部
材４ａとは分離される。 Then, the mask member 4 located on the resist layer 3 and the mask member 4a located on the same surface as the resist layer 3 are separated.
そこで、この状態で被加工材１ごとアセトン中
に浸漬し超音波振動を加えると、レジスト層３が
一部溶解され下地から剥離するので、このレジス
ト層３と一緒にマスク部材の一部４が除去され
る。こうして、第５図に示すように、被加工材１
上に密着層２を介し所望形状のマスク部材４ａを
形成し終える。 Therefore, when the workpiece 1 is immersed in acetone in this state and ultrasonic vibration is applied, a portion of the resist layer 3 is dissolved and peeled off from the base, so that a portion 4 of the mask member is removed together with the resist layer 3. removed. In this way, as shown in FIG.
A mask member 4a having a desired shape is formed on top with the adhesive layer 2 interposed therebetween.
形成されたマスク部材４ａは金属同士である密
着層２に十分な強度で密着しており、更に密着層
２は被加工材１中に含まれるSiO2等の酸化物に
おける酸素と大きな親和性を有した元素、Al，
Cr等を含み、従つて密着層２と被加工材１との
密着力も大である。 The formed mask member 4a is in close contact with the adhesion layer 2, which is made of metal, with sufficient strength, and the adhesion layer 2 has a high affinity for oxygen in oxides such as SiO 2 contained in the workpiece 1. The element Al,
It contains Cr, etc., and therefore the adhesion between the adhesion layer 2 and the workpiece 1 is high.
このため、イオン・エツチングに際し、イオン
衝撃による温度上昇等に十分に耐え得て、マスク
部材４ａが剥離することがなくなる。また、密着
層２自体は薄くかつマスク部材４ａに比較しスパ
ツタ率が大きいので、イオン・エツチングの進行
を阻害することは無視することができる。更にレ
ジスト剤としては、下地層がAl，Al合金，Cr等
の金属であり、種々の周知のレジスト剤を使用す
ることができる。 Therefore, during ion etching, the mask member 4a can sufficiently withstand temperature increases caused by ion bombardment, and the mask member 4a will not peel off. Furthermore, since the adhesive layer 2 itself is thin and has a higher sputtering rate than the mask member 4a, the inhibition of the progress of ion etching can be ignored. Further, as the resist agent, the base layer is made of metal such as Al, Al alloy, Cr, etc., and various known resist agents can be used.
以上説明したように本発明によれば、イオン・
エツチング中におけるマスク部材の剥離を防止
し、露光・現像に際してレジストの切れを良くし
て精密なパターン形成を可能とする等の効果が奏
せられる。 As explained above, according to the present invention, ions and
Effects such as preventing peeling of the mask member during etching and making it possible to form a precise pattern by improving the cutting of the resist during exposure and development can be achieved.
第１図ないし第５図は本発明に基づくイオン・
エツチング用金属マスクの形成工程を示す図であ
る。
１……被加工材、２……密着層、３……レジス
ト層、４，４ａ……マスク部材。
FIGS. 1 to 5 show the ion beams according to the present invention.
FIG. 3 is a diagram showing a process of forming a metal mask for etching. 1... Work material, 2... Adhesive layer, 3... Resist layer, 4, 4a... Mask member.
Claims (1)
エツチングを行うにあたり、被加工材上にイオン
衝撃を遮断する金属製のマスク部材を形成するイ
オンエツチング用金属マスクの形成方法におい
て、 被加工材上にAl又はAl合金又はCr又は酸素に
対する親和性が大きな他の金属よりなる密着層を
成膜し、 しかる後、リフトオフ法に従つて金属製のマス
ク部材を形成することを特徴とするイオンエツチ
ング用金属マスクの形成方法。[Claims of Claims] 1. A method for forming a metal mask for ion etching, which forms a metal mask member that blocks ion bombardment on a workpiece when performing ion etching on a workpiece made of a metal oxide. In this step, an adhesion layer made of Al, Al alloy, Cr, or other metal with high affinity for oxygen is formed on the workpiece, and then a metal mask member is formed using the lift-off method. Characteristic method for forming a metal mask for ion etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17099379A JPS5696076A (en) | 1979-12-28 | 1979-12-28 | Formation of metallic mask for ion etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17099379A JPS5696076A (en) | 1979-12-28 | 1979-12-28 | Formation of metallic mask for ion etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5696076A JPS5696076A (en) | 1981-08-03 |
| JPS6227156B2 true JPS6227156B2 (en) | 1987-06-12 |
Family
ID=15915122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17099379A Granted JPS5696076A (en) | 1979-12-28 | 1979-12-28 | Formation of metallic mask for ion etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5696076A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52125431A (en) * | 1976-04-15 | 1977-10-21 | Fujitsu Ltd | Dry etching method |
| JPS5432143A (en) * | 1977-08-17 | 1979-03-09 | Hitachi Ltd | Etching process |
-
1979
- 1979-12-28 JP JP17099379A patent/JPS5696076A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52125431A (en) * | 1976-04-15 | 1977-10-21 | Fujitsu Ltd | Dry etching method |
| JPS5432143A (en) * | 1977-08-17 | 1979-03-09 | Hitachi Ltd | Etching process |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5696076A (en) | 1981-08-03 |
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