JPH01227211A - Manufacture of thin film magnetic head - Google Patents

Manufacture of thin film magnetic head

Info

Publication number
JPH01227211A
JPH01227211A JP5149988A JP5149988A JPH01227211A JP H01227211 A JPH01227211 A JP H01227211A JP 5149988 A JP5149988 A JP 5149988A JP 5149988 A JP5149988 A JP 5149988A JP H01227211 A JPH01227211 A JP H01227211A
Authority
JP
Japan
Prior art keywords
film
thin film
tip
photoresist
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5149988A
Other languages
Japanese (ja)
Inventor
Takashi Kawabe
川邊 隆
Ataru Kobayashi
中 小林
Moriaki Fuyama
盛明 府山
Masatoshi Tsuchiya
土屋 正利
Eiji Ashida
栄次 芦田
Makoto Morijiri
誠 森尻
Shinji Narushige
成重 真治
Shinichi Hara
真一 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5149988A priority Critical patent/JPH01227211A/en
Publication of JPH01227211A publication Critical patent/JPH01227211A/en
Pending legal-status Critical Current

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  • Magnetic Heads (AREA)

Abstract

PURPOSE:To obtain a thin film magnetic head which prevent the occurrence of etching remainder at the tip of resin by forming a thin film which is a mask material, after that, etching this thin film and an upper magnetic film with photoresist films as a mask and obtaining a prescribed form. CONSTITUTION:After forming a lower magnetic film 12, a gap film 13, a conductor film 14 and a layer insulating layer film 15 on a substrate 11, an upper magnetic film 16 and an alumina 17 as a tip mask part are formed by a spattering method. Next, an upper photoresist 21 and a lower photoresist 22 are formed on step parts. With these resists 21 and 22 as the mask material, the alumina film 17 is patterned by a method in which CF4 gas is used and the magnetic film 16 is patterned by using AR gas. Next, the resists 21 and 22 are peeled off and a photoresist 23 to etch a resin tip 18 is formed. Next, the tip 18 is removed by a method in which oxygen gas is used, the photoresist 23 is peeled off the etching remainder of the resin tip is prevented from occurring.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は薄膜磁気ヘッドの製造方法に係り、特に、層間
絶縁層の露出が無い薄膜磁気ヘッドの製造方法に関する
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a thin film magnetic head, and more particularly to a method of manufacturing a thin film magnetic head in which no interlayer insulating layer is exposed.

〔従来の技術〕[Conventional technology]

磁気記録の高密度化、高速化に伴って、薄膜磁気ヘッド
の性能を向上させるために、磁気ギャップの深さをでき
るだけ小さくすることが要求されている。この磁気ギャ
ップは、磁気ヘッド表面を研磨加工することによって形
成されるが、加工の際に研磨面(トラ゛ツク面)に、磁
気ヘッドに用いられている導体コイルの層間絶縁層樹脂
が露出すると、磁気ディスク表面にクラッシュして信号
を破壊してしまう。このため、従来より、特開昭59−
30220号公報に示されているように、上部磁性膜パ
ターンを形成した後、この絶縁層樹脂の先端部をエツチ
ング除去する方法が広く採用されている。
As the density and speed of magnetic recording increases, it is required to reduce the depth of the magnetic gap as much as possible in order to improve the performance of thin-film magnetic heads. This magnetic gap is formed by polishing the surface of the magnetic head, but if the interlayer insulating layer resin of the conductor coil used in the magnetic head is exposed on the polished surface (track surface) during machining, , it crashes into the magnetic disk surface and destroys the signal. For this reason, conventionally, JP-A-59-
As shown in Japanese Patent Application No. 30220, a widely used method is to form an upper magnetic film pattern and then remove the tip of the insulating layer resin by etching.

このエツチング方法の具体例として、前記公知例中には
、酸素等を用いたイオンミリング法があげられており、
また、ウェットエツチングの可能性も示されているが、
いずれの手法を用いる場合でも、上部磁性膜パターンを
保護するために、この部分をホトレジスト等で被覆して
おくことが必要である。
As a specific example of this etching method, the above-mentioned known examples include an ion milling method using oxygen etc.
The possibility of wet etching has also been shown,
Regardless of which method is used, it is necessary to cover this portion with photoresist or the like in order to protect the upper magnetic film pattern.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし、−度パターニングを終了した上部磁性膜部分に
、再び、ホトレジストパターンを形成する場合には、実
際の製造工程では、必ず、パターン位置ずれが生じるた
め、このずれによってホトレジストで被覆された部分の
複縁層樹脂がエツチングされずに残ってしまう原因とな
っていた。
However, when forming a photoresist pattern again on the upper magnetic film part that has been patterned, in the actual manufacturing process, the pattern position will inevitably shift. This caused the composite edge layer resin to remain unetched.

本発明の目的は、絶縁層樹脂の先端部を精度良く除去す
る方法を提供することにある。
An object of the present invention is to provide a method for accurately removing the tip of an insulating layer resin.

〔課題を解決するための手段〕[Means to solve the problem]

前記目的は、あらかじめ上部磁性膜の上に、絶縁層樹脂
の先端部を除去する工程において、マスク材となり得る
薄膜(以下、先端部マスク膜と呼・ぶ)を成膜した後、
この薄膜と上部磁性膜とを、同一のホトレジストパター
ンをマスク材としてエツチングして所定のパターン形状
を得てから、絶縁層樹脂の先端部を除去することにより
達成される。
The purpose is to form a thin film that can be used as a mask material (hereinafter referred to as a tip mask film) on top of the upper magnetic film in advance in the process of removing the tip of the insulating layer resin.
This is achieved by etching this thin film and the upper magnetic film using the same photoresist pattern as a mask material to obtain a predetermined pattern shape, and then removing the tip of the insulating layer resin.

一般に、絶縁層樹脂の先端部を除去する工程には、公知
例中に示されているように、酸素を用いた反応性ドライ
エツチングが用いられることが多いため、先端部マスク
膜の材料は、耐酸素エツチング性にすぐれた物質、すな
わち、酸素エツチング速度の遅い物質が望ましい。この
具体例には、酸化アルミニウム、酸化硅素等の無機酸化
物、クロム等の金属があげられる。
Generally, in the step of removing the tip of the insulating layer resin, reactive dry etching using oxygen is often used as shown in the known examples, so the material of the tip mask film is A material with excellent oxygen etching resistance, ie, a material with a slow oxygen etching rate, is desirable. Specific examples include inorganic oxides such as aluminum oxide and silicon oxide, and metals such as chromium.

また、この先端部マスク膜の厚さが小さすぎると、先端
部除去工程において、上部磁性膜表面が露出してしまい
、上部磁性膜の厚さが減少したり、上部磁性膜表面が変
質したりする問題が生じることがわかつており、一方、
先端部マスク膜の厚さが大きすぎると、上部磁性膜のパ
ターニング精度が悪くなって、記録密度を決定するトラ
ック幅のばらつきが大きくなってしまうこともわかって
いる。従って、先端部マスク膜の厚さは、酸素エツチン
グ速度を考慮しながら、できる限り薄く決定するのが望
ましく、通常、0.1〜1.0μmの範囲で適用するの
が望ましい。
Furthermore, if the thickness of this tip mask film is too small, the surface of the upper magnetic film will be exposed during the tip removal process, resulting in a decrease in the thickness of the upper magnetic film or a change in quality of the upper magnetic film surface. It is known that problems arise due to
It is also known that if the thickness of the tip mask film is too large, the patterning accuracy of the upper magnetic film deteriorates, resulting in large variations in the track width that determines the recording density. Therefore, it is desirable to determine the thickness of the tip mask film to be as thin as possible while taking into consideration the oxygen etching rate, and it is generally desirable to apply the thickness in the range of 0.1 to 1.0 μm.

この先端部マスク膜と上部磁性膜をエツチングする際は
、アルゴンガスを用いたドライエツチング法が多く用い
られるが、一般に、先端部マスク膜として望ましい物質
、すなわち、酸素エツチング速度の遅い物質は、アルゴ
ンエツチング速度も遅い場合が多く、パターニング後の
上部磁性膜の寸法ばらつきが大きくなることが多い。こ
れを避けるための手法の一例として、先端部マスク膜を
アルゴン以外のガスによる反応性ドライエツチングでパ
ターニングした後、続いてアルゴンガスによるドライエ
ツチング法を用いて上部磁性膜をパターニングする方法
が有効である。例えば、先端部マスク膜として酸化アル
ミニラ11膜を用いた場合は、アルゴンガスのみでトラ
イエツチングした場合よりも、ふつ化炭素や塩化炭素系
のガスを用いて酸化アルミニウム膜をエツチングした後
でアルゴンガスを用いて上部磁性膜をエツチングした場
合のほうが、エツチング速度が大きく、寸法ばらつきが
小さい。
When etching the tip mask film and the upper magnetic film, a dry etching method using argon gas is often used, but in general, argon etching is the preferred material for the tip mask film, that is, a material with a slow oxygen etching rate. The etching speed is often slow, and the dimensional variation of the upper magnetic film after patterning is often large. An effective method to avoid this is to pattern the tip mask film by reactive dry etching using a gas other than argon, and then pattern the upper magnetic film using dry etching using argon gas. be. For example, when an aluminum oxide 11 film is used as the tip mask film, it is better to use argon gas after etching the aluminum oxide film using carbon fluoride or carbon chloride gas than when using argon gas alone. When etching the upper magnetic film using etching, the etching speed is higher and dimensional variations are smaller.

一方、前述の手段を適用すべく、ホトレジストパターン
をマスク材として先端部マスク膜と上部磁性膜をエツチ
ングするには、ホトレジストを高精度に形成する必要が
ある。従って、絶縁層樹脂段差の下部は、できるだけホ
トレジスト膜厚を小さくするのが望ましく、例えば、ホ
トレジスト形成工程を二つに分けて、段差上部と下部の
ホトレジストを別々に形成する等の方法をとることが望
ましい。特に、ドライエツチング法を適用する場合は、
ホトレジストパターン側壁への再付着発生を防ぐために
、上記の方法は有効である。
On the other hand, in order to apply the above-mentioned means and to etch the tip mask film and the upper magnetic film using a photoresist pattern as a mask material, it is necessary to form the photoresist with high precision. Therefore, it is desirable to reduce the photoresist film thickness as much as possible at the bottom of the insulating layer resin step. For example, the photoresist forming process may be divided into two, and the photoresist for the top and bottom of the step may be formed separately. is desirable. Especially when applying the dry etching method,
The above method is effective in preventing re-adhesion to the sidewalls of the photoresist pattern.

〔作用〕[Effect]

前述の手段をとることにより、上部磁性膜の上面を先端
部マスク膜が保護しているために、絶縁層樹脂の先端部
除去工程で高精度なホトレジスト形成が不要となる。
By taking the above-mentioned measures, since the top surface of the upper magnetic film is protected by the tip mask film, it becomes unnecessary to form a highly accurate photoresist in the step of removing the tip of the insulating layer resin.

また、先端部マスク膜の厚さが、上部磁性膜の厚さ(通
常1〜3μm)と比べて小さいために、エツチング時に
上部磁性膜の寸法ばらつきも小さくできる。
Furthermore, since the thickness of the tip mask film is smaller than the thickness of the upper magnetic film (usually 1 to 3 μm), dimensional variations in the upper magnetic film can be reduced during etching.

また、先端部マスク膜と上部磁性膜を、同一のホトレジ
ストパターンをマスクにして同一工程でエツチングでき
るため、工程数も少ない。
Furthermore, since the tip mask film and the upper magnetic film can be etched in the same process using the same photoresist pattern as a mask, the number of steps is also reduced.

〔実施例〕〔Example〕

以下、本発明の一実施例を、第1図および第2図を用い
て説明する。第1図および第2図は、本発明の手法を用
いた場合の薄膜磁気ヘッドの製造工程の一部を示し、第
1図は磁気ヘッド素子部の側断面図、第2図は上面図を
示す。
An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. 1 and 2 show part of the manufacturing process of a thin film magnetic head using the method of the present invention, FIG. 1 is a side sectional view of the magnetic head element section, and FIG. 2 is a top view. show.

まず、第1図および第2図(a)に示したように、基板
11上に下部磁性膜12.ギャップ膜13、導体コイル
142層間絶縁層樹脂ISの各パターンを形成した後、
上部磁性膜16、及び、先端部マスク膜としてのアルミ
ナ膜(厚さ0.4μm)17をスパッタリング法で成膜
した。次に、第1図および第2図(b)に示すように、
段差部・分に上部ホトレジスト21、及び、下部ホトレ
ジスト22の各パターンを形成した。このホトレジスト
パターン21、及び、22をマスク材として、まず、C
F4ガスを用いたイオンミリング法でアルミナ膜17を
パターニングし、ひき続いてアルゴンガスを用いたイオ
ンミリング法で上部磁性膜16をパターニングして、第
1図および第2図(c)に示した構造を得た。次いで、
第1図および第2図(cl)に示したように、ホトレジ
スト21、及び、22を剥離した後、第1図および第2
図(e)に示すように、樹脂先端部18をエツチングす
るためのホトレジスト23を形成した。
First, as shown in FIGS. 1 and 2(a), a lower magnetic film 12 is placed on a substrate 11. After forming each pattern of the gap film 13, the conductor coil 142, and the interlayer insulation layer resin IS,
An upper magnetic film 16 and an alumina film (thickness: 0.4 μm) 17 as a tip mask film were formed by sputtering. Next, as shown in FIG. 1 and FIG. 2(b),
Patterns of an upper photoresist 21 and a lower photoresist 22 were formed at the stepped portions. Using these photoresist patterns 21 and 22 as mask materials, first, C.
The alumina film 17 was patterned by ion milling using F4 gas, and then the upper magnetic film 16 was patterned by ion milling using argon gas, as shown in FIGS. 1 and 2(c). I got the structure. Then,
As shown in FIGS. 1 and 2 (cl), after peeling off the photoresists 21 and 22,
As shown in Figure (e), a photoresist 23 for etching the resin tip 18 was formed.

この時、上部磁性膜16の表面はアルミナ膜17で覆わ
れているため、高精度なホトレジストパターン形成は不
要であった。次いで、酸素ガスを用いたイオンミリング
法により、樹脂先端部18を除去し、ホトレジスト23
を剥離して、第1図および第2図(f)に示した構造を
持つ薄膜磁気ヘッドを得た。
At this time, since the surface of the upper magnetic film 16 was covered with the alumina film 17, there was no need to form a highly accurate photoresist pattern. Next, the resin tip 18 is removed by ion milling using oxygen gas, and the photoresist 23 is removed.
By peeling off the film, a thin film magnetic head having the structure shown in FIGS. 1 and 2(f) was obtained.

こうして得られた磁気ヘッドは、ホトレジストの合わせ
ずれに起因する樹脂先端部のエツチング残りが生じない
ため、従来に比べて、信頼性が大きく向上した。
The thus obtained magnetic head has greatly improved reliability compared to the conventional magnetic head because no etching residue is left on the resin tip due to misalignment of the photoresist.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、層間絶縁層樹脂の先端部分を確実に除
去できるため、磁気ディスクとのクラッシュを起こさな
い薄膜磁気ヘッドが得られる。
According to the present invention, since the tip portion of the interlayer insulating layer resin can be reliably removed, a thin film magnetic head that does not cause a crash with a magnetic disk can be obtained.

【図面の簡単な説明】 第1図および第2図は、本発明の一実施例としての工程
を示す図であり、第1図は薄膜磁気ヘッドの側断面図、
第2図は上面図を表わす。 11・・基板、12・・・下部磁性膜、13.・・・ギ
ャップ膜、14・・・導体コイル、15・・・層間絶縁
層樹脂、16・・・上部磁性膜、17・・・先端部マス
ク膜、18・・・樹脂先端部、21・・・上部ホトレジ
スト、22・・・第1 図
[BRIEF DESCRIPTION OF THE DRAWINGS] FIGS. 1 and 2 are diagrams showing steps as an embodiment of the present invention, and FIG. 1 is a side sectional view of a thin film magnetic head;
FIG. 2 represents a top view. 11... Substrate, 12... Lower magnetic film, 13. ... Gap film, 14... Conductor coil, 15... Interlayer insulating layer resin, 16... Upper magnetic film, 17... Tip mask film, 18... Resin tip, 21...・Top photoresist, 22...Fig. 1

Claims (1)

【特許請求の範囲】 1、基板上に下部磁性膜、ギャップ材、導体コイル、有
機樹脂層間絶縁膜、上部磁性膜を順次形成する薄膜磁気
ヘッドの製造方法において、前記上記磁性膜の上部に保
護薄膜を形成する第一の工程と、前記保護薄膜及び前記
上部磁性膜を感光性樹脂膜をマスク材としてエッチング
する第二の工程と、前記保護薄膜を前記マスク材として
前記有機樹脂層間絶縁膜の一部をエッチングする第三の
工程を含むことを特徴とする薄膜磁気ヘッドの製造方法
。 2、特許請求の範囲第1項において、 前記保護薄膜が無機酸化物、もしくは、金属からなるこ
とを特徴とする薄膜磁気ヘッドの製造方法。 3、特許請求の範囲第1項または第2項において前記第
二の工程の前記感光性樹脂膜の形成工程を、前記有機樹
脂層間絶縁膜の段差部分の上部に形成する工程と下部に
形成する工程の二つに分けたことを特徴とする薄膜磁気
ヘッドの製造方法。
[Claims] 1. A method for manufacturing a thin film magnetic head in which a lower magnetic film, a gap material, a conductor coil, an organic resin interlayer insulating film, and an upper magnetic film are sequentially formed on a substrate, wherein a protective layer is provided on the upper part of the magnetic film. a first step of forming a thin film, a second step of etching the protective thin film and the upper magnetic film using a photosensitive resin film as a mask material, and etching the organic resin interlayer insulating film using the protective thin film as a mask material. A method for manufacturing a thin film magnetic head, comprising a third step of partially etching. 2. The method of manufacturing a thin film magnetic head according to claim 1, wherein the protective thin film is made of an inorganic oxide or a metal. 3. In claim 1 or 2, the step of forming the photosensitive resin film in the second step is a step of forming the photosensitive resin film on the top and bottom of the stepped portion of the organic resin interlayer insulating film. A method for manufacturing a thin film magnetic head characterized by dividing the process into two steps.
JP5149988A 1988-03-07 1988-03-07 Manufacture of thin film magnetic head Pending JPH01227211A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5149988A JPH01227211A (en) 1988-03-07 1988-03-07 Manufacture of thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5149988A JPH01227211A (en) 1988-03-07 1988-03-07 Manufacture of thin film magnetic head

Publications (1)

Publication Number Publication Date
JPH01227211A true JPH01227211A (en) 1989-09-11

Family

ID=12888672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5149988A Pending JPH01227211A (en) 1988-03-07 1988-03-07 Manufacture of thin film magnetic head

Country Status (1)

Country Link
JP (1) JPH01227211A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0621583A2 (en) * 1993-04-19 1994-10-26 Read-Rite Corporation Process of making thin film magnetic head

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0621583A2 (en) * 1993-04-19 1994-10-26 Read-Rite Corporation Process of making thin film magnetic head
EP0621583A3 (en) * 1993-04-19 1995-11-15 Read Rite Corp Process of making thin film magnetic head.

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