JPS62267629A - Thermometer for cryogenic temperature - Google Patents
Thermometer for cryogenic temperatureInfo
- Publication number
- JPS62267629A JPS62267629A JP61110532A JP11053286A JPS62267629A JP S62267629 A JPS62267629 A JP S62267629A JP 61110532 A JP61110532 A JP 61110532A JP 11053286 A JP11053286 A JP 11053286A JP S62267629 A JPS62267629 A JP S62267629A
- Authority
- JP
- Japan
- Prior art keywords
- cryogenic
- amorphous silicon
- thermometer
- silicon film
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 技術分野
本発明は、極低温用温度計に関し、より詳細には、電気
抵抗値が極低温領域の温度によって変化することを利用
した温度計に関するものである。Detailed Description of the Invention (a) Technical Field The present invention relates to a thermometer for cryogenic temperatures, and more particularly to a thermometer that utilizes the fact that electrical resistance changes depending on the temperature in the cryogenic region. .
（ｂ） 従来技術
一般に、極低温用温度計は、極低温状態下で稼動される
ＭＨＤ発電、核融合炉用超電導磁石、超電導送電、超高
速磁気浮上列車等における極低温の計測に用いられてい
る。(b) Prior Art In general, cryogenic thermometers are used to measure cryogenic temperatures in MHD power generation, superconducting magnets for nuclear fusion reactors, superconducting power transmission, ultrahigh-speed magnetic levitation trains, etc. that operate under cryogenic conditions. There is.
この種の極低温用温度計としては、ゲルマニラムやシリ
コン等の単結晶あるいはカーボンの薄膜の電気抵抗が温
度によって変化することを利用したものがある。その−
例を第６図および第７図を用いて説明する・
即ち、銅の基板上に焼結アルミナでなる絶縁性基板５１
を板状に形成してクリーニングし、［第６図（Ａ）参照
］、第６図（Ｂ）に示すように抵抗体としてのカーボン
被膜５２を電子ビームで蒸着し、しかる後第６図（Ｃ）
に示すようにカーボン被膜５２の両端部に接触し、絶縁
基板５１の表面に沿い、かつ抵抗値測定用リード線を接
続するためのランド部５３ａ、５４ａが形成された導体
パターン５３．５４が形成される。This type of cryogenic thermometer utilizes the fact that the electrical resistance of a single crystal such as gelmanilam or silicon or a thin film of carbon changes with temperature. That-
An example will be explained using FIGS. 6 and 7. In other words, an insulating substrate 51 made of sintered alumina on a copper substrate
is formed into a plate shape and cleaned [see FIG. 6(A)]. As shown in FIG. 6(B), a carbon film 52 as a resistor is deposited with an electron beam, and then as shown in FIG. C)
As shown in FIG. 2, conductive patterns 53 and 54 are formed which are in contact with both ends of the carbon coating 52, along the surface of the insulating substrate 51, and have land portions 53a and 54a for connecting lead wires for resistance value measurement. be done.
さらに、その上面に第６図ＣＤ）に示すようなガラス保
護膜５５を形成し、第６図（Ｅ）に示すようにリード線
接続用のランド部５３ａ。Further, a glass protective film 55 as shown in FIG. 6CD) is formed on the upper surface thereof, and a land portion 53a for connecting lead wires is formed as shown in FIG. 6(E).
５４ａのみが露出する極低温用温度計１００が完成する
。A cryogenic thermometer 100 in which only 54a is exposed is completed.
しかしながら、このようなカーボン薄膜極低温用温度計
１００は、第４図中、曲線（イ）に示すようしこ磁場の
強さに対して抵抗値があまり変化しないため、上述の超
電導磁石等の強磁場中における温度測定に１よ好適であ
るが、抵抗／温度の変化特性が第５図中曲線（イ）に示
すように温度変化に対する抵抗変化が若干少ないという
欠点がある。However, in such a carbon thin film cryogenic thermometer 100, the resistance value does not change much with respect to the strength of the magnetic field as shown by the curve (A) in FIG. Although it is more suitable than 1 for temperature measurement in a strong magnetic field, it has the disadvantage that the resistance change with respect to temperature change is somewhat small, as shown in the resistance/temperature change characteristic as shown by curve (a) in FIG.
一方、カーボン被膜５２の抵抗／温度の変化特性を向上
させるためのカーボン被膜５２の代りにゲルマニウムの
単結晶を用いた温度計もあるが、この後者の従来例は、
第５図中、曲線（ロ）に示されるように抵抗／温度の変
化特性は非常に大きくなるものの、磁場に対する影響が
第４図の曲線（ロ）に示すように非常に大きくなってし
まい上述のような超電導磁石等の高磁場中では、使用が
困難になってしまうという問題点がある。On the other hand, there is also a thermometer that uses germanium single crystal instead of the carbon film 52 to improve the resistance/temperature change characteristics of the carbon film 52, but this latter conventional example is
Although the resistance/temperature change characteristics become very large as shown by the curve (b) in Fig. 5, the influence on the magnetic field becomes very large as shown by the curve (b) in Fig. 4, which is explained above. There is a problem in that it becomes difficult to use superconducting magnets such as those in high magnetic fields.
また、ゲルマニウムの代りにシリコンの単結晶を用いた
ものも同様の問題が生じてしまう。Further, a similar problem occurs when silicon single crystal is used instead of germanium.
（ｃ） 目的
上述の事情に鑑み本発明がなされたもので、その目的は
、抵抗／温度の変化特性が大きく、かつ磁場による抵抗
変化の少ない極低温用温度計を提供することにある。(c) Purpose The present invention has been made in view of the above-mentioned circumstances, and its purpose is to provide a cryogenic thermometer that has large resistance/temperature change characteristics and little resistance change due to magnetic fields.
（ｄ） 構成
上述の目的を達成するために本発明に係る極低温用温度
計は、絶縁基板上に非晶質シリコン膜を形成し、この非
晶質シリコン膜の表面↓こ互いに短絡しない２つの金属
導体でなる電極を近接して形成し、この２つの電極間の
抵抗値をもとに極低温領域における温度を計測し得るよ
うに構成したことを特徴とするものである。(d) Structure In order to achieve the above-mentioned object, the cryogenic thermometer according to the present invention forms an amorphous silicon film on an insulating substrate, and prevents short-circuiting between the surfaces of this amorphous silicon film. The device is characterized in that two electrodes made of metal conductors are formed close to each other, and the temperature in the cryogenic region can be measured based on the resistance value between the two electrodes.
以下５本発明の実施例を添付図面に基づいて説明する。Hereinafter, five embodiments of the present invention will be described based on the accompanying drawings.
本実施例に係る極低温用温度計は、次のような工程でも
って作られる。即ち、
■ 第２図（Ａ）に示すようなガラスまたはセラミック
等からなる０、５ｍｍ程度の板厚を有する絶縁基板１を
形成し、その表面をクリーニングする。The cryogenic thermometer according to this embodiment is manufactured through the following steps. That is, (1) An insulating substrate 1 made of glass or ceramic and having a thickness of about 0.5 mm is formed as shown in FIG. 2(A), and its surface is cleaned.
■ 第２図（Ｂ）に示すように、絶縁基板１上に非晶質
シリコン被膜２を１００オングストローム〜１０００オ
ングストローム程度、形成（堆積）する。この形成方法
は、いわゆる化学気相成長法（一般にｒＣＶＤＪと称さ
れている）によるが、具体的し；１ま、絶縁基板１をサ
ブストレイトとして真空槽（例えば石英ベルジャ）内に
配置し、この真空槽内を約０．５〜１．０Ｘ１０−ａト
ールの真空度に排気し、シランＳｉＨ４のガスとリンを
いわゆる不純物のドーピング材として導入し、この真空
槽内でグロー放電させてＮ型の非晶質シリコンを絶縁基
板１上に上述した所定の膜厚となるまで蒸着堆積させる
ことによって非晶質シリコン被膜２を形成する。(2) As shown in FIG. 2(B), an amorphous silicon film 2 having a thickness of about 100 angstroms to 1000 angstroms is formed (deposited) on an insulating substrate 1. This formation method is based on the so-called chemical vapor deposition method (generally referred to as rCVDJ). The inside of the vacuum chamber was evacuated to a degree of vacuum of approximately 0.5 to 1.0 x 10-a torr, silane SiH4 gas and phosphorus were introduced as so-called impurity doping materials, and glow discharge was performed in the vacuum chamber to form an N-type The amorphous silicon film 2 is formed by depositing amorphous silicon on the insulating substrate 1 by vapor deposition until it reaches the above-mentioned predetermined film thickness.
■ しかる後、第１図および第２図（Ｃ）に示すように
、＜シ歯状のｆｆ１ｉ （以下「＜シ歯状部」という）
３ｂとこのくし歯状部３ｂの基端から延出したランド部
３ａを有する電極３と、この電極３のくし歯状部３ｂの
くし歯と相対的に嵌入の位置にあるくし歯状部４ｂを有
し、その基端から延出したランド部４ａを有する電極４
を形成する。この電極３，４を形成するには、電極３，
４を膜形成すべき形状以外の部位をステンレス薄板また
はポリエステルテープでマスキングし、アルゴンガス雰
囲気中でＡ２等を１μｍ〜５μｍ程度の膜厚となるまで
スパッタリングする。■ After that, as shown in Fig. 1 and Fig. 2 (C),
3b, an electrode 3 having a land portion 3a extending from the base end of the comb-teeth-like portion 3b, and a comb-teeth-like portion 4b in a fitted position relative to the comb-teeth of the comb-teeth-like portion 3b of the electrode 3. An electrode 4 having a land portion 4a extending from its base end.
form. In order to form the electrodes 3 and 4, the electrodes 3,
4 is masked with a thin stainless steel plate or polyester tape, and A2 or the like is sputtered to a film thickness of about 1 μm to 5 μm in an argon gas atmosphere.
■ 第２図（Ｄ）に示すように、電極３，４のランド部
３ａ 、４ａ以外の部位を耐湿、耐水性をもたせるため
にガラス被膜５で被覆する。(2) As shown in FIG. 2(D), portions of the electrodes 3 and 4 other than the land portions 3a and 4a are coated with a glass coating 5 to provide moisture and water resistance.
■ 第１図に示すようにランド部３ａ 、 ４ａに抵抗
値副室用のリードｖＡ６，７を溶着、超音波ボンディン
グ等の手段を用いて連結固定する。(2) As shown in FIG. 1, the leads vA6 and 7 for the resistance sub-chamber are connected and fixed to the land portions 3a and 4a by means of welding, ultrasonic bonding, etc.
このようにして、作られた極低温用温度計２００を用い
て超電導磁石あるいはＭＨＤ発電装置等における極低温
を検出すべき部位に配設し、温度検出を行なうと、第４
図の曲線（ハ）をもって示すように、磁場に対する影響
は、従来のカーボン温度計に比して略同等の優れた特性
を有すると共に従来のゲルマニウム湿度計の場合に比し
て約１／１０に低減される。When the cryogenic thermometer 200 made in this manner is placed at the part of a superconducting magnet or MHD power generation device where extremely low temperatures are to be detected and temperature is detected, the fourth
As shown by the curve (c) in the figure, the effect on the magnetic field has approximately the same excellent characteristics as the conventional carbon thermometer, and is about 1/10 of that of the conventional germanium hygrometer. reduced.
しかも、抵抗／温度変化特性は、第５図の曲線（ハ）を
もって示すように温度が従来のゲルマニウム温度計に比
して約１／２に低下するものの従来のカーボン温度計の
場合に比して大幅に向上したものになる。Furthermore, the resistance/temperature change characteristics are lower than those of conventional carbon thermometers, although the temperature decreases to about 1/2 compared to conventional germanium thermometers, as shown by curve (c) in Figure 5. This will result in a significant improvement.
また、上述した非晶質シリコン被膜２は、等方性があり
、真空槽から引き上げる際やカッティングする際、その
方向性を考慮しなくてすむので、囃結晶シリコン被膜や
カーボン被膜による場合に比べて、製作し易いという利
点がある。In addition, the amorphous silicon film 2 described above is isotropic, and there is no need to consider its direction when pulling it out of the vacuum chamber or cutting it, compared to the case of using a crystalline silicon film or a carbon film. It has the advantage of being easy to manufacture.
尚、本発明は、上述の実施例に限定されることなく、そ
の要旨を逸脱しない範囲内で種々変形実施することがで
きる。It should be noted that the present invention is not limited to the above-described embodiments, and can be modified in various ways without departing from the spirit thereof.
例えば、計測用のリード線の取付けは、上述の実施例に
示すように電極３．４のランド部３ａ 、４ａに直接に
接続する代りに第３図に示すように絶縁基板１１の上表
面に形成された非晶質シリコン被膜１２上に形成された
電極１３゜１４の基部にランド部１３ａ、１４ａを形成
する。その近傍に端子部２０．２２を膜形成し。For example, the lead wires for measurement may be attached to the upper surface of the insulating substrate 11 as shown in FIG. Land portions 13a and 14a are formed at the bases of the electrodes 13 and 14 formed on the formed amorphous silicon film 12. Terminal portions 20 and 22 are formed in the vicinity thereof.
同端子部２０．２２のランド部２０ａ、２２ａと上述の
ランド部１４ａ、１３ａの間をたるみを有した状態で３
０〜５０μｍ程度の直径を有する金線２１．２３でボン
ディングにより接続し、さらに端子部２０．２２のそれ
ぞれのランド部２０ｂ、２２ｂに計測用のリード線１６
゜１７をそれぞれ接続するようにしても良い。3 with slack between the land parts 20a, 22a of the same terminal part 20.22 and the above-mentioned land parts 14a, 13a.
A gold wire 21.23 having a diameter of approximately 0 to 50 μm is connected by bonding, and a lead wire 16 for measurement is connected to each land portion 20b, 22b of the terminal portion 20.22.
17 may be connected to each other.
この場合には、極低温用温度計に対するリード線１６．
１７の引っ張り等による悪影響を防止することができる
。In this case, lead wire 16. for the cryogenic thermometer.
17 can be prevented from being adversely affected by the pulling or the like.
また、上述の各実施例においては、電極かくし歯状に形
成されているが単なる帯状であっても良い。さらに非晶
質シリコンの表面側に形成される保護被膜の有無はその
使用状態に応じて省略することができる。Further, in each of the above-described embodiments, the electrodes are formed in the shape of comb teeth, but they may be simply formed in the shape of a band. Further, the presence or absence of a protective film formed on the surface side of the amorphous silicon can be omitted depending on the usage condition.
（ｅ） 効果
以上詳しく説明したところより既に明らかなように１本
発明によれば、抵抗／温度変化特性が大きくかつ磁場に
よる抵抗変化が少ないので。(e) Effects As is already clear from the detailed explanation above, according to the present invention, the resistance/temperature change characteristic is large and the resistance change due to a magnetic field is small.
高磁場中における極低温度の検出を極めて正確に行なう
ことができる極低温用温度計を提供することができる。A cryogenic thermometer that can extremely accurately detect extremely low temperatures in a high magnetic field can be provided.
第１図は、本発明に係る極低温用温度計の一実施例の構
成を示す平面図、第２図（Ａ）〜（Ｄ）のそれぞれは、
第１図に示す極低温用温度計の製造工程を示す断面図、
第３図は、本発明に係る極低温用湿度計の他の実施例の
構成を示す平面図、第４図は、磁場強度と抵抗変化率と
の関係を示す特性図、第５図は、温度と抵抗値との関係
を示す特性図、第６図（Ａ）〜第６図（Ｅ）゛のそれぞ
れは、従来の極低温用温度計の製造工程を示す平面図、
第７図は、第６図（Ａ）〜第６図（Ｅ）に示す従来の極
低温用温度計の構成を示す断面図である。
１．１１・・・・・・絶縁基板、
２．１２・・・・・・非晶質シリコン被膜。
３．４，１３，１４・・・・・・電極。
３ａ、４ａ、１３ａｆ １４ａ、２０ａ１２０ｂ 、
２２ａ 、 ２２ｂ ・・・・・・ランド部。
５・・・・・・ガラス被膜、
６．７・・・・・・リード線。
２０．２２・・・・・・端子部。
２１．２３・・・・・・金線。FIG. 1 is a plan view showing the configuration of an embodiment of a cryogenic thermometer according to the present invention, and FIGS. 2(A) to 2(D) each show the following:
A cross-sectional view showing the manufacturing process of the cryogenic thermometer shown in FIG.
FIG. 3 is a plan view showing the configuration of another embodiment of the cryogenic hygrometer according to the present invention, FIG. 4 is a characteristic diagram showing the relationship between magnetic field strength and resistance change rate, and FIG. Characteristic diagrams showing the relationship between temperature and resistance value, FIGS. 6(A) to 6(E) are respectively plan views showing the manufacturing process of a conventional cryogenic thermometer;
FIG. 7 is a sectional view showing the structure of the conventional cryogenic thermometer shown in FIGS. 6(A) to 6(E). 1.11...Insulating substrate, 2.12...Amorphous silicon coating. 3.4, 13, 14... electrode. 3a, 4a, 13af 14a, 20a120b,
22a, 22b... Land portion. 5...Glass coating, 6.7...Lead wire. 20.22...Terminal section. 21.23...Gold wire.
Claims (7)
晶質シリコン膜の表面に互いに短絡しない２つの金属導
体でなる電極を近接して形成し、この２つの電極間の抵
抗値をもとに極低温領域における温度を計測し得るよう
に構成したことを特徴とする極低温用温度計。(1) An amorphous silicon film is formed on an insulating substrate, and electrodes made of two metal conductors that do not short-circuit each other are formed close to each other on the surface of this amorphous silicon film, and the resistance value between these two electrodes is A cryogenic thermometer characterized in that it is configured to be able to measure temperature in a cryogenic region based on.
請求の範囲第１項記載の極低温用温度計。(2) The cryogenic thermometer according to claim 1, wherein the amorphous silicon film is an n-type semiconductor.
シラン中に不純物としてのリンをドーピングして得られ
たアモルファスシリコン膜である特許請求の範囲第２項
記載の極低温用温度計。(3) The cryogenic thermometer according to claim 2, wherein the amorphous silicon film is an amorphous silicon film obtained by doping phosphorus as an impurity into silane by chemical vapor deposition. .
許請求の範囲第１項記載の極低温用温度計。(4) The cryogenic thermometer according to claim 1, wherein the electrode is made of a thin film metal such as aluminum.
を存して配設されている特許請求の範囲第４項記載の極
低温用温度計。(5) The cryogenic thermometer according to claim 4, wherein the two electrodes are disposed facing each other in a plane with a constant gap.
求の範囲第１項記載の極低温用温度計。(6) The cryogenic thermometer according to claim 1, wherein the insulating substrate is a plate-shaped ceramic.
１項記載の極低温用温度計。(7) The cryogenic thermometer according to claim 1, wherein the insulating substrate is glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61110532A JPS62267629A (en) | 1986-05-16 | 1986-05-16 | Thermometer for cryogenic temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61110532A JPS62267629A (en) | 1986-05-16 | 1986-05-16 | Thermometer for cryogenic temperature |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62267629A true JPS62267629A (en) | 1987-11-20 |
| JPH0584453B2 JPH0584453B2 (en) | 1993-12-02 |
Family
ID=14538193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61110532A Granted JPS62267629A (en) | 1986-05-16 | 1986-05-16 | Thermometer for cryogenic temperature |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62267629A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004264157A (en) * | 2003-02-28 | 2004-09-24 | Kenji Sumiyama | Transition metal cluster assembly having low-magnetic resistance and manufacturing method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5580023A (en) * | 1978-12-12 | 1980-06-16 | Matsushita Electric Ind Co Ltd | Thermistor |
| JPS55117934A (en) * | 1979-03-05 | 1980-09-10 | Matsushita Electric Ind Co Ltd | Thermosensitive element |
| JPS5870588A (en) * | 1981-09-28 | 1983-04-27 | シ−メンス・アクチエンゲゼルシヤフト | Temperature sensor and method of producing same |
| JPS58170001A (en) * | 1982-03-31 | 1983-10-06 | アンリツ株式会社 | Temperature sensitive device |
| JPS6140526A (en) * | 1984-07-31 | 1986-02-26 | Mitsuteru Kimura | Temperature sensor |
-
1986
- 1986-05-16 JP JP61110532A patent/JPS62267629A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5580023A (en) * | 1978-12-12 | 1980-06-16 | Matsushita Electric Ind Co Ltd | Thermistor |
| JPS55117934A (en) * | 1979-03-05 | 1980-09-10 | Matsushita Electric Ind Co Ltd | Thermosensitive element |
| JPS5870588A (en) * | 1981-09-28 | 1983-04-27 | シ−メンス・アクチエンゲゼルシヤフト | Temperature sensor and method of producing same |
| JPS58170001A (en) * | 1982-03-31 | 1983-10-06 | アンリツ株式会社 | Temperature sensitive device |
| JPS6140526A (en) * | 1984-07-31 | 1986-02-26 | Mitsuteru Kimura | Temperature sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004264157A (en) * | 2003-02-28 | 2004-09-24 | Kenji Sumiyama | Transition metal cluster assembly having low-magnetic resistance and manufacturing method therefor |
| JP4500988B2 (en) * | 2003-02-28 | 2010-07-14 | 国立大学法人 名古屋工業大学 | Low magnetoresistance transition metal cluster aggregate and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0584453B2 (en) | 1993-12-02 |
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