JPS62266878A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPS62266878A JPS62266878A JP61111008A JP11100886A JPS62266878A JP S62266878 A JPS62266878 A JP S62266878A JP 61111008 A JP61111008 A JP 61111008A JP 11100886 A JP11100886 A JP 11100886A JP S62266878 A JPS62266878 A JP S62266878A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- light
- diameter
- package
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 17
- 230000003287 optical effect Effects 0.000 abstract description 16
- 239000013307 optical fiber Substances 0.000 abstract description 15
- 238000004891 communication Methods 0.000 abstract description 7
- 239000000835 fiber Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 4
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 230000001808 coupling effect Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光通信用受光素子のパッケージ構造に関する
。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a package structure of a light receiving element for optical communication.
従来の技術
光Ｌ Ａ Ｎなどに代表されるニューメディア分野の急
激な展開期を迎え、光通信分野が大きな注目をあびてい
る。この光通信システムにとって重要な点は、次の２点
に集約される。その一つは、伝送損失の少ない高性能な
光ファイバーの開発であり、他の一つは、システムを構
成する光部品と受発光素子の高性能化と高信頼化である
。The optical communications field is attracting a lot of attention as the new media field, represented by conventional technology optical LAN, is entering a period of rapid development. The important points for this optical communication system can be summarized into the following two points. One of these is the development of high-performance optical fibers with low transmission loss, and the other is to improve the performance and reliability of the optical components and light-receiving elements that make up the system.
光通信用受光素子にとって重要な特性とは、第一に、光
ファイバーとの結合性が高く、受光感度が高いこと、第
二に、遮断周波数が高いことの二つである。これらの特
性を満たすため、デバイス構造としては、ＰＩＮフォト
ダイオードやアバランシェフォトダイオード（ＡＰＤ）
が使用され、これによって、ＩＧＨｚ程度の高速化を達
成している。しかしながら、上記第一の点を解決できる
決定的な有効なパッケージ構造は、今のところ見出され
ていない。The two important characteristics for a light-receiving element for optical communication are, firstly, high coupling with optical fibers and high light-receiving sensitivity, and secondly, high cut-off frequency. In order to meet these characteristics, device structures such as PIN photodiodes and avalanche photodiodes (APD) are used.
is used, thereby achieving high speeds on the order of IGHz. However, no definitive and effective package structure that can solve the above first point has been found so far.
通常、使用される光ファイバーは、コア直径が５０μｍ
のＧＩ５０／１２５タイプの光７フイバーであり、
開口角（ＮＡ）は、約０．２である。このＧＴ５０／１
２５タイプの光ファイバーを伝搬した光伝送信号を受光
素子の受光部に有効に入射させるには、第２図に示され
るように、光ファイバー１と受光素子３との間をできる
限り近づけて、パッケージのガラスレンズ６の外面に、
最接近のところまで、持ってくる結合方式がもっばら用
いられている。第２図の構造により、長波長帯ＰＩＮフ
ォトダイオードの場合、受光径：８０μｍで、最大受光
感度０．７〜０．８／、、量子効率７０〜８０％が実現
されている。Usually, the optical fiber used has a core diameter of 50 μm.
It is a GI50/125 type optical 7 fiber,
The aperture angle (NA) is approximately 0.2. This GT50/1
In order to effectively make the optical transmission signal propagated through the 25 type optical fiber enter the light receiving part of the light receiving element, as shown in FIG. On the outer surface of the glass lens 6,
The coupling method that brings the objects to the closest point is often used. With the structure shown in FIG. 2, in the case of a long wavelength band PIN photodiode, a maximum light receiving sensitivity of 0.7 to 0.8/, and a quantum efficiency of 70 to 80% is achieved at a light receiving diameter of 80 μm.
発明が解決しようとする問題点
しかしながら、従来の構造の光通信用受光素子のパッケ
ージには、以下に述べるような問題点を有している。ま
ず、受光素子３とフラットレンズ６との間隔ｄをできる
限り小さくすることが、感度の向上を計るうえで、必須
条件である。ところが、間隔ｄの大きさは、ステムヘッ
ダーの高さ、受光素子３のチップの厚み、フラットレン
ズ６の支持台の高さの大小で、±１００μｍ程度のばら
つきを有する。Problems to be Solved by the Invention However, the conventional structure of a package for a light-receiving element for optical communication has the following problems. First, in order to improve sensitivity, it is essential to make the distance d between the light receiving element 3 and the flat lens 6 as small as possible. However, the size of the distance d varies by about ±100 μm depending on the height of the stem header, the thickness of the chip of the light receiving element 3, and the height of the support base of the flat lens 6.
一方、光ファイバーを出た光信号のビームは、開口角Ｎ
Ａ＝０．２の大きさで広がるため、光ファイバー１の先
端と受光素子３と間の距離が最大２００μｍ程度速くな
ると、受光感度は、４以下に低下してしまう。したがっ
て、パッケージの寸法公差の範囲内で、受光感度は大き
くばらつくことになる。また、受光素子チップ上に設け
た内部結線用の全細線が、盛り上がると、これがレンズ
６の内面と衝突し内部結線の損傷を発生することがある
。On the other hand, the beam of the optical signal exiting the optical fiber has an aperture angle N
Since it spreads with a magnitude of A=0.2, when the distance between the tip of the optical fiber 1 and the light receiving element 3 increases by about 200 μm at most, the light receiving sensitivity decreases to 4 or less. Therefore, the light receiving sensitivity will vary widely within the range of the dimensional tolerance of the package. Furthermore, if all the thin wires for internal connections provided on the light receiving element chip swell up, they may collide with the inner surface of the lens 6, causing damage to the internal connections.
さらに、フラットレンズキャップのガラス厚が薄いほど
、光ファイバーとチップとの間隔を小さくすることがで
きるが、機械的な強度を保つ必要性から、板厚は０．３
Ｍ以上必要となり、この面からも、感度向上を実現する
のは困難である。一般に、ガラス面での入射光の反射を
防ぐため、受光波長の署波長の無反射コーティング（Ａ
Ｒコート）を施し、受光感度の向上を計っているが、こ
のことは、フラットキャップのコスト高にもつながって
いる。Furthermore, the thinner the glass thickness of the flat lens cap, the smaller the distance between the optical fiber and the chip, but due to the need to maintain mechanical strength, the plate thickness is 0.3
M or more is required, and from this point of view as well, it is difficult to improve sensitivity. Generally, in order to prevent reflection of incident light on the glass surface, anti-reflection coating (A
R coating) is applied to improve light-receiving sensitivity, but this also increases the cost of the flat cap.
本発明は、以上述べた光通信用受光素子の課頭となる問
題点を解決する方策を提案するものである。The present invention proposes a method for solving the above-mentioned problems of light receiving elements for optical communication.
問題点を解決するための手段
今まで述べたような問題点を解決するため、本発明は、
入射光ビーム径を１００μｍ以下に絞り得る両面凸形状
のマイクロレンズ系を、受光前面に配設したことを特徴
とする半導体受光装置である。Means for Solving the Problems In order to solve the problems as described above, the present invention provides the following:
This semiconductor light receiving device is characterized in that a microlens system having a convex shape on both sides that can narrow down the incident light beam diameter to 100 μm or less is disposed on the front surface of the light receiving surface.
作用
本発明によると、光信号のビームは、前途のようにＮＡ
＝０．２の開口角で広がるが、このビームを両面凸形状
のマイクロレンズで集光し、受光部全体で受ける光学系
を用いることによって、フラットレンズパッケージを用
いることなしに、光ファイバーとの結合性が高く、受光
感度の優れた受光デバイスを容易に実現することができ
る。According to the present invention, the beam of optical signals has a NA of
= 0.2, but by using an optical system that focuses this beam with a microlens with a convex shape on both sides and receives it in the entire light receiving section, it is possible to couple it to an optical fiber without using a flat lens package. A light-receiving device with high sensitivity and excellent light-receiving sensitivity can be easily realized.
実施例
第１図は本発明実施例の受光装置の概要側断面図であり
、光フアイバー１２両面凸形状レンズ系２、受光素子（
チップ）３．サブマウント４．システム５をそなえてい
る。つぎに、この受光素子に、角度αの光ビームが入射
する場合を述べる。Embodiment FIG. 1 is a schematic side sectional view of a light receiving device according to an embodiment of the present invention, which includes an optical fiber 12, a double-sided convex lens system 2, a light receiving element (
Chip) 3. Submount 4. Equipped with System 5. Next, a case will be described in which a light beam at an angle α is incident on this light receiving element.
マイクロレンズの焦点距離をｆ、前側焦点位置をｆＦ、
後側焦点位置をｆＢとする。物点すなわち、光ファイバ
ー１の先端からの距＊Ｓは、マイクロレンズ先端からフ
ァイバ端距離をＶとして、Ｓ＝Ｖ＋ｆ−ｆｒ、像点の位
置Ｓ′は、同図よすＳ’＝ｂ＋ ｆ−ｆＢである。−＋
−・＝’ｙ、＜レンズの公式）と像倍率ｍ＝％＝冊（ｓ
ｉｎａ＝ＮＡ＝０．２）であり、ｔａｎβ＝Ｔ＃Ｄ、／
ｘが成り立ち全てのパラメータを決定できる。The focal length of the microlens is f, the front focal position is fF,
Let the back focal position be fB. The object point, that is, the distance *S from the tip of the optical fiber 1, is S=V+f-fr, where the distance from the microlens tip to the fiber end is V, and the position S' of the image point is S'=b+f- fB. −+
−・='y, <lens formula) and image magnification m=%=book (s
ina=NA=0.2), tanβ=T#D, /
x holds true and all parameters can be determined.
通常、ステム５の形状が決まれば、距１ｂ−ｘが決まり
、受光径φＤも既知であるから、受光径φＤの大きさに
入射ビームが絞れるファイバーレンズ間圧ｗＩＶを求め
ればよい。Normally, once the shape of the stem 5 is determined, the distance 1b-x is determined and the light receiving diameter φD is also known, so it is sufficient to find the pressure wIV between the fiber lenses that allows the incident beam to be focused to the size of the light receiving diameter φD.
このように使用するファイバの開口角と受光素子の受光
径φＤによって、最適な受光感度が得られる距ｍＶを実
験的に求めればよい。ただし、このような光学系が、有
効に作用するのは、受光径が、以下に述べるように、１
００μｍ以下の場合に特に顕著な効果があり、受光径が
３００μｍ程度では、第２図に示すフラットレンズで間
隔αを相当大きくしても、十分な結合効率が得られるた
め、両凸の集光効果を必要としない。The distance mV at which the optimum light-receiving sensitivity can be obtained can be determined experimentally based on the aperture angle of the fiber used and the light-receiving diameter φD of the light-receiving element. However, such an optical system works effectively only when the receiving diameter is 1 as described below.
The effect is particularly remarkable when the receiving diameter is 00 μm or less, and when the receiving diameter is about 300 μm, sufficient coupling efficiency can be obtained even if the distance α is considerably increased using a flat lens shown in Figure 2. Does not require effect.
本発明のパッケージを用いた実施例について述べる。こ
こでは、ＩｎＧａＡｓを用いた長波長ＰＩＮフォトダイ
オードへの適応例について説明する。An example using the package of the present invention will be described. Here, an example of application to a long wavelength PIN photodiode using InGaAs will be described.
ＳドープのＮ−ＩｎＰ基板上に、液相成長法により低不
純物濃度のｎ−１ｎＰ層とｎ−１ｎＧａＡｓ層をそれぞ
れ２μｍブフ成長した。キャリア濃度は、５ Ｘ １０
１５．ａｍ−３である。On an S-doped N-InP substrate, an n-1nP layer and an n-1nGaAs layer with a low impurity concentration were each grown to a thickness of 2 μm by liquid phase growth. The carrier concentration is 5 x 10
15. am-3.
この成長基板にＺｎ拡散を行ないｎ−１ｎＧａＡｓ層の
一部分をＰ＋領域に反転させ、電極を形成し、ＰＩＮフ
ォトダイオードとした。チップ表面にＡＲコート膜を形
成し、厚さ２００μｍのチップを作成した。受光径は、
８０μｍである。暗電流は、ＶＲ＝ １０ｙで１ｎＡで
ある。This growth substrate was subjected to Zn diffusion, a portion of the n-1nGaAs layer was inverted to a P+ region, and an electrode was formed to form a PIN photodiode. An AR coating film was formed on the surface of the chip to create a chip with a thickness of 200 μm. The receiving diameter is
It is 80 μm. The dark current is 1 nA at VR=10y.
このチップをＴＯ−１８ステムにダイスボンドした後、
ワイヤーポンドを行なった。この後、外半径ｚ＝０．８
ｍｍ、内半径ｒ２＝０．５ｍ＋ｍ、厚さ１ｍ、屈折率ｎ
＝１．５の両凸のマイクロレンズのついたパッケージで
キャッピングを行なった。After die bonding this chip to the TO-18 stem,
We did wire pounding. After this, the outer radius z=0.8
mm, inner radius r2=0.5m+m, thickness 1m, refractive index n
Capping was performed using a package with a biconvex microlens of =1.5.
本実施例による受光感度特性を、下表に従来例と対比し
て示す。The light receiving sensitivity characteristics of this example are shown in the table below in comparison with the conventional example.
〈以 下 余 白〉
発明の効果
本発明により、両凸形状のマイクロレンズの付いたパッ
ケージの場合には、最小０．６４、最大０．７６Ａ／／
、平均０．６８への受光感度Ｓが得られた。結果として
、従来のＡＲコート付ラフラットレンズパッケージ同等
の受光感度ＳをＡ Ｒ，コートなしで達成することがで
きた。また、感度のばらつきも光ファイバーの位置を調
整することによって、相対的に小さくなり、組立ロット
による変動も少なくなった。<Margin below> Effects of the invention According to the present invention, in the case of a package with a biconvex microlens, the minimum power is 0.64 and the maximum is 0.76 A//
, an average light receiving sensitivity S of 0.68 was obtained. As a result, we were able to achieve the same light-receiving sensitivity S as a conventional AR coated flat lens package without AR coating. In addition, by adjusting the position of the optical fiber, variations in sensitivity have become relatively small, and variations due to assembly lots have also been reduced.
さらに、光ファイバーを受光素子に最接近する必要もな
く、ファイバ端面の損傷の心配が全くなくなり、信頼性
の窩いデバイスを実現することができた。Furthermore, there is no need to bring the optical fiber closest to the light-receiving element, and there is no need to worry about damage to the end face of the fiber, making it possible to realize a reliable optical device.
前述したように、両凸マイクロレンズ集光径は、受光径
１００μ−以下の場合に受光感度を上げる方法として特
に有効である。As described above, the condensing diameter of the biconvex microlens is particularly effective as a method of increasing the light receiving sensitivity when the light receiving diameter is 100 μm or less.
第１図は、本発明の両凸マイクロレンズ付パッケージの
概要個所両面、第２図は、従来のフラットレンズパッケ
ージの断面図である。
１・・・・・・光ファイバ、２・・・・・・両凸形状マ
イクロレンズ系、３・・・・・・受光素子、４・・・・
・・サブマウント、５・・・・・・ステム、６・・・・
・・フラットレンズ。FIG. 1 is a schematic view of both sides of a package with a double-convex microlens according to the present invention, and FIG. 2 is a sectional view of a conventional flat lens package. 1... Optical fiber, 2... Biconvex microlens system, 3... Light receiving element, 4...
...Submount, 5...Stem, 6...
・Flat lens.
Claims (1)
のマイクロレンズ系を、受光前面に配設したことを特徴
とする半導体受光装置。A semiconductor light-receiving device characterized in that a microlens system having convex surfaces on both sides and capable of narrowing the diameter of an incident light beam to 100 μm or less is disposed on the front surface of the light-receiving surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61111008A JP2568506B2 (en) | 1986-05-15 | 1986-05-15 | Semiconductor light receiving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61111008A JP2568506B2 (en) | 1986-05-15 | 1986-05-15 | Semiconductor light receiving device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62266878A true JPS62266878A (en) | 1987-11-19 |
| JP2568506B2 JP2568506B2 (en) | 1997-01-08 |
Family
ID=14550062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61111008A Expired - Lifetime JP2568506B2 (en) | 1986-05-15 | 1986-05-15 | Semiconductor light receiving device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2568506B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04111761U (en) * | 1991-03-14 | 1992-09-29 | ホーヤ株式会社 | Light receiving element |
| EP0690323A3 (en) * | 1994-06-29 | 1996-12-27 | Sumitomo Electric Industries | Analog photodiode module |
| JP2012098756A (en) * | 2012-02-07 | 2012-05-24 | Kyocera Corp | Optical path converting body and packaging structure thereof, and optical module with the same |
| CN114883420A (en) * | 2022-04-25 | 2022-08-09 | Nano科技(北京)有限公司 | Packaging structure and packaging method for improving high-power working characteristics of photoelectric detector |
| CN115220162A (en) * | 2022-08-10 | 2022-10-21 | 苏州天孚光通信股份有限公司 | Optical detector, packaging device and packaging method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6141213U (en) * | 1984-08-17 | 1986-03-15 | 富士通株式会社 | Light receiving module for optical communication |
-
1986
- 1986-05-15 JP JP61111008A patent/JP2568506B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6141213U (en) * | 1984-08-17 | 1986-03-15 | 富士通株式会社 | Light receiving module for optical communication |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04111761U (en) * | 1991-03-14 | 1992-09-29 | ホーヤ株式会社 | Light receiving element |
| EP0690323A3 (en) * | 1994-06-29 | 1996-12-27 | Sumitomo Electric Industries | Analog photodiode module |
| JP2012098756A (en) * | 2012-02-07 | 2012-05-24 | Kyocera Corp | Optical path converting body and packaging structure thereof, and optical module with the same |
| CN114883420A (en) * | 2022-04-25 | 2022-08-09 | Nano科技(北京)有限公司 | Packaging structure and packaging method for improving high-power working characteristics of photoelectric detector |
| CN115220162A (en) * | 2022-08-10 | 2022-10-21 | 苏州天孚光通信股份有限公司 | Optical detector, packaging device and packaging method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2568506B2 (en) | 1997-01-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2015039394A1 (en) | Coupling device of optical waveguide chip and pd array lens | |
| US7057158B2 (en) | Optical subassembly for high speed optoelectronic devices | |
| US20030010904A1 (en) | High speed fiber to photodetector interface | |
| JP6530871B1 (en) | Edge-incident light receiving element | |
| JPS62266878A (en) | Semiconductor photodetector | |
| KR100464333B1 (en) | Photo detector and method for fabricating thereof | |
| JPH1039162A (en) | Optical semiconductor device, semiconductor photodetector, and formation of optical fiber | |
| JPH04246868A (en) | P-i-n photodiode and method of improving efficiency thereof | |
| JP3417200B2 (en) | Optical transmission / reception module | |
| WO2022054188A1 (en) | Surface incidence-type semiconductor light-receiving element | |
| JPH09269440A (en) | Light transmitting and receiving module | |
| CN209199952U (en) | Integrated photodetector | |
| JPS63269580A (en) | Light detector | |
| JP3689644B2 (en) | Bidirectional optical communication device and bidirectional optical communication device | |
| JPH1152199A (en) | Optical signal transmission and reception module | |
| JP3100418B2 (en) | Light receiving device | |
| KR970005215B1 (en) | Semiconductor light detecting device | |
| CN109378349B (en) | Integrated photoelectric detector and manufacturing method thereof | |
| JPH05136446A (en) | Semiconductor photodetector | |
| CN217561783U (en) | Integrated optical engine structure | |
| JPH0562472B2 (en) | ||
| JPH0497574A (en) | Semiconductor light receiving device | |
| KR100326048B1 (en) | Optical module for receving light signal | |
| JPH0290685A (en) | Semiconductor photodetecting element | |
| JPH04291210A (en) | Manufacture of photocoupler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |