JPH1152199A - Optical signal transmission and reception module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make it possible to decrease the number of parts coupled to a single mode fiber and to reduce the size and cost of a module by partly absorbing reception light by a light receiving element, converting this light into an electric signal, condensing the light for transmission remaining without being absorbed in the light receiving element by a built-in lens and making this light incident on an optical transmission path. SOLUTION: The light from a station side propitiating in an optical fiber 62 emerges from the end face of this optical fiber 62 and turns to the light 63 spreading at the angle determined by its numerical aperture. This light enters the light receiving layer 65 of a photodiode 64 existing just before the optical fiber. About half the light is absorbed therein. The absorbed light changes to an electric signal. The remaining half of the light transmits the layer. The reception light emerges from the light emitting layer 71 of a semiconductor laser 70. This light enters the photodiode 64 from its rear surface 67 and about half thereof is absorbed in the light receiving layer 65 and is loss. The light of the power of the remaining half emerges to a space 66 from the front surface. The transmitted laser beam 73 is converged by the built-in lens 74 and is made incident into the inside of the optical fiber 62.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of an optical transceiver module used for optical two-way communication. In particular, the present invention relates to a ping-pong transmission type optical transmission / reception module having an optical transmission path, a light receiving element, a lens, and a light emitting element, so that transmission and reception are exclusively performed. That is, signal transmission is bidirectional, but transmission and reception are not performed at the same time, and the transmission is performed in a complementary manner.

[0002]

2. Description of the Related Art Due to a reduction in transmission loss of an optical fiber and an improvement in characteristics of a semiconductor laser (hereinafter abbreviated as LD) and a semiconductor light receiving element (hereinafter abbreviated as PD), light, particularly wavelength 1.3 μm or 1. Communication of signals (telephone, facsimile, television image signal, and the like) using light in a long wavelength band of .55 μm is becoming popular. This is generally called optical communication.
In particular, recently, a system for simultaneously exchanging signals in two directions using one optical fiber has been studied. The advantage of this method is that only one fiber is required.

FIG. 1 shows one wavelength (λ) of such a system.
FIG. This requires the optical demultiplexers 2 and 4 on the station side and the subscriber side. The office side amplifies the telephone or facsimile (FAX) signal as a digital signal or an analog signal, and then drives the semiconductor laser LD1 to send the signal to the optical fiber 1 as a signal of the intensity of the light having the wavelength λ. The optical signal enters the optical fiber 3 by the optical splitter 2, propagates through the optical fiber 3, and is distributed to the subscriber. The optical fiber 3 is laid around subscribers such as homes, offices, factories and the like. The direction in which a signal is sent from the station side to the subscriber side in this way is called a downlink system.

On the subscriber side, the down signal is taken out to the optical fiber 5 by the optical demultiplexer 4 and received by the light receiving element PD2. The PD 2 converts the received optical signal into an electric signal, amplifies the signal, performs signal processing, and reproduces it as a telephone voice or a FAX signal.

On the other hand, the subscriber transmits a telephone or facsimile image signal to the office. The semiconductor laser LD2 that emits light having the wavelength λ is modulated by a telephone signal or an image signal, and transmitted as an optical signal to the office through the optical fiber 6, the optical demultiplexer 4, and the optical fiber 3. The direction in which a signal is sent from the subscriber side to the station side in this way is called an uplink system. The station side extracts this optical signal to the optical fiber 7 by the optical demultiplexer 2, and
Received by D1. This is converted into an electric signal and sent to the exchange or signal processing circuit. Here at one wavelength, going up,
Downlink signal transmission cannot be performed simultaneously. Therefore, uplink and downlink signals are transmitted alternately at different times. This is called ping-pong transmission.

Thus, using one optical fiber,
In order to perform two-way communication using light of one wavelength, both the station side and the subscriber side need a functional element for separating an optical path. In FIG. 1, the optical demultiplexers 2 and 4 play the role. The optical demultiplexer can collectively introduce the light having the wavelength λ into one optical fiber. Conversely, light having a wavelength λ propagating through one optical fiber can be distributed to two different optical fibers. An optical demultiplexer is indispensable for two-way communication using one optical fiber.

Several types of optical demultiplexers have been proposed. There are a type using two optical fibers, a type using an optical waveguide, and a type using a multilayer mirror. FIG. 2 shows an optical fiber or optical waveguide type. The two light waveguide portions are brought closer to each other and evanescently coupled to enable energy exchange. By appropriately selecting the distance D and the length L of the coupling section, it is possible to impart a light demultiplexing / combining function. In FIG. 2, the light entered into the optical fiber 8 comes out to the optical fiber 11 as P3. However, about half of the light is transferred to the fiber 12 and becomes unused light. Conversely, when the light P4 is input from the fiber 11, the light becomes approximately half the amount of light and exits from the fibers 8 and 9.

[0008] Such an optical demultiplexer can be used for an optical demultiplexer on the station side as well as an optical demultiplexer on the subscriber side. The optical demultiplexer of FIG. 3 is obtained by depositing a dielectric multilayer film on a diagonal surface of an isosceles triangular prism glass block, and attaching another equivalent glass block to form a square prism. The dielectric multilayer film serves as an interference filter. When light having an angle of 45 degrees with respect to the bonding surface is incident, about half of the light is reflected and the remaining light is transmitted. Such a light demultiplexing function is realized by appropriately selecting the thickness and the refractive index of the dielectric film. Several other optical demultiplexers have been proposed.

As described above, the light is transmitted at a certain intensity ratio (for example, 1:
Elements that are divided into different paths in 1) are called optical demultiplexers and demultiplexers / multiplexers. Those using optical fibers or glass blocks are already commercially available. What should be emphasized about the function of the above-mentioned elements is that half the amount of light is wasted in any case. This is unavoidable because of the single wavelength and the reversibility of light.

FIG. 4 is a schematic diagram showing a configuration example of a conventional optical transmission / reception module on the subscriber side. The end of the optical fiber 16 connected to the office is connected to an outdoor optical fiber 18 by an optical connector 17. This is separated into upstream light and downstream light by an optical fiber type optical splitter 21. As described above, it is possible to provide a function of splitting light 1: 1 according to the length of the proximity distance between the proximity portions 20 of the two optical fibers. The upstream light of the semiconductor laser (LD) is put into the optical fiber 18 and the downstream light is taken out from the optical fiber 19 side.
The signal is received by a photodiode (PD).

The optical fiber 18 is connected to an LD module 25 by an optical connector 22. The LD module is for converting a digital signal from the subscriber into an optical signal and transmitting it to the station. The optical fiber 19 is connected to the PD module 27 by the optical connector 23. This is for converting an optical signal from the station side into an electric signal and receiving it on the subscriber side. There is also an example using an optical demultiplexer called a beam splitter. For example, EP4632
14-B1 and the like.

FIG. 5 is a sectional view of a semiconductor light emitting element module 28 according to a conventional example. A semiconductor laser chip 29 and a photodiode 30 for monitoring the output of the semiconductor laser chip 29 are provided. The semiconductor laser 29 is connected to the header 3 via a submount.
2 is attached to the pole 31. The photodiode 30 is fixed on the upper surface of the header 32. A plurality of lead pins 33 are provided at the bottom of the header 32. Through hole 3
5, a cylindrical cap 34 having a semiconductor laser 29,
It is welded to the header 32 so as to surround the photodiode 30. Lead pins and chips 29, 30 by wire
Are connected to an external circuit.

Above the header is a cylindrical lens holder 36. The lens holder 36 has a condenser lens 37 in the center hole. A conical housing 38 is further welded onto the lens holder 36. Housing 3
At 8 is attached a ferrule 39 and an optical fiber 40 whose tip is fixed by the ferrule. The semiconductor laser 29, the lens, the optical fiber, and the like are aligned, and the lens holder 36 and the housing 38 are fixed. The lens enhances the light collecting property to increase the coupling ratio between the laser and the optical fiber. Light emitted from behind the semiconductor laser is monitored by the monitoring photodiode, and the drive current is controlled by the feedback circuit. Thus, the output of the semiconductor laser can be kept constant even if there is a temperature change.

The present invention relates not only to the structure of a semiconductor laser but also to the structure of a photodiode. Therefore, the light receiving element module according to the conventional example will also be described. FIG.
FIG. 2 is a sectional view of a light receiving element module according to a conventional example. P
A D chip 41 is fixed on a disk-shaped header 42. The header 42 has a plurality of lead pins 43. The lens holder 46 holds the condenser lens 47. A housing 48 is welded to the upper part of the lens holder 46. A ferrule 49 to which the tip of the optical fiber 50 is fixed is inserted into the housing 48.

The tip of the optical fiber 50 is cut obliquely. Light emitted from the optical fiber 50 is condensed by a lens and enters the light receiving element 41. In order to receive 1.3 μm light or 1.55 μm light as a light receiving element (PD),
PDs using nP as a substrate and InGaAs as a light receiving layer are often used. As described above, the present invention has a lot to do with the structure of the light receiving element. Therefore, the structure of the conventional light receiving element will be described in more detail.

FIG. 7 is a sectional view of a conventional semiconductor light receiving element chip. On the n-InP substrate 52, n-InP
P buffer layer 53, n-InGaAs light receiving layer 54, n-
The InP window layer 55 is epitaxially grown. n-I
The central portion of the nP window layer 55 and the InGaAs light receiving layer 54 is a zinc diffusion region 56. A ring-shaped p-electrode 57 is formed on this p-type region. An n-electrode 61 is formed on the n-InP substrate 52. An area surrounded by the p-electrode 57 is covered with an antireflection film 58.
The outside of the p-electrode 57 is protected by a passivation film 59. Signal light enters from the side of the InP window layer where the antireflection film 58 is located, is absorbed by the InGaAs light absorption layer, and is converted into an electric signal.

FIG. 8 is a graph showing the sensitivity characteristics of such a light receiving element. The horizontal axis is wavelength (μm), and the vertical axis is sensitivity (A / W). The sensitivity graph shows the rising part P,
A flat portion Q and a falling portion R are included. In this example, the wavelength range showing high sensitivity ranges from 1.0 μm to 1.6 μm. The high sensitivity range is determined by the material of the light absorbing layer. This case is determined by the material characteristics of the InGaAs light receiving layer 54. A photodiode having such a wide sensitivity characteristic has been used in a conventional light receiving element module. The light emitted from the optical fiber spreads in a substantially circular shape. Therefore, a light receiving element having a circular light receiving surface is used.

[0018]

A conventional optical transmitting / receiving module combining an optical demultiplexer, a semiconductor light emitting element and a light receiving element is composed of three main parts as shown in FIG. Having three parts increases the size and price. In addition, there is a problem that it is difficult to use for long-distance communication because light loss occurs at a branching filter or a coupling portion of an optical fiber. Therefore, there is a problem that it is difficult to spread the optical transmission / reception module to general households.

Several modules for bidirectional communication without using an optical demultiplexer have been proposed. Japanese Patent Publication No. Hei 7-58806: This is a multimode optical fiber + surface emitting LED + light receiving element, LED, P
D. The LED is bonded directly on the PD. JP-A-57-172873: Surface-emitting LEDs and PDs are also arranged from the side closer to the multimode optical fiber. A small LED is manufactured in a part of the PD.
Housed in a package.

Each of them is a multimode optical fiber and has a large diameter. The diameter of the emitted light is as large as about 100 μm. This is N. A. (Numerical aperture), so that the beam has a large cross-sectional area. In this case, even if a small laser is provided in the center of the PD, most of the light reaches the light receiving element through a portion other than the laser. Since the beam is wide (200 μm to 300 μm in diameter) and the laser chip is small, a lot of light reaches a place other than a shadow, and the light enters a light receiving element having a wide light receiving surface. Does not allow the received light to be absorbed by the laser. Since wide multimode light is propagated through the multimode optical fiber, it cannot be used for optical communication aimed at by the present invention.

An optical fiber used for optical communication is a single mode fiber having a core diameter of 10 μm. Multimode fibers are unsuitable because they cannot transmit much information over long distances without distortion. The small core diameter makes coupling difficult and the laser must be aligned and fixed close to the core end face of the fiber. Laser chip is several hundred μm
And a width of several hundred μm, most of the light is blocked when placed in front of a single mode fiber. Even if a photodiode is placed behind it, no light reaches the photodiode. , Cannot be used for subscriber optical communication using single mode fiber.

It is a first object of the present invention to provide a small and inexpensive optical transceiver module which can be coupled to a single mode fiber and has a smaller number of components. It is a second object of the present invention to provide an optical transmitting and receiving module with low light loss. It is a third object of the present invention to provide an optical transceiver module that can greatly contribute to practical use of an optical subscriber system. It is a fourth object of the present invention to provide an optical transmitting / receiving module that can reduce assembly costs by reducing the number of alignment points.

[0023]

An optical transmitting / receiving module according to the present invention is an optical transmitting / receiving module for performing transmission / reception through one optical transmission line, wherein the light receiving element with the lens and the light emitting element are viewed from the side close to the optical transmission path. Yes, the light receiving element with the lens receives the received light emitted from the optical transmission path, absorbs a part of the emitted light, converts it into an electric signal, and the light for transmission out of the light emitting element enters the light receiving element and receives the light. A part of the light is absorbed, and the rest is condensed by a built-in lens to be incident on an optical transmission path. Except for the built-in lens, Japanese Patent Application No. 8-104405, which is a prior application of the present inventors.
There is much in common with the issue “Optical transceiver module”.

The light transmitting / receiving module of the present invention comprises a special light receiving element and a light emitting element which are provided with a lens and partially transmit signal light, and are arranged in a straight line. No branch exists. The reception light and the transmission light are not spatially separated by the branch. The reception light and the transmission light propagate on the same straight line. No splitting is required and the transmitted and received light is not separated. The present invention has a remarkable feature in a light receiving element (photodiode). It uses a partially transmissive and partially absorbing photodiode. Since it is partially transmissive, a light emitting element can be provided in series immediately after that. Further, a monolithic (built-in) lens is formed on the light receiving element, and the light of the light emitting element is condensed by the lens and is input into an optical transmission path (optical fiber, optical waveguide). The feature of the present invention is that the light receiving element is partially transmissive and has a lens, and the light receiving element and the light emitting element are connected in series. The light receiving element has a very unique property of partial absorption and partial transmission. Any ratio of absorption: transmission may be used. This can be determined freely according to the purpose, the capability of the light emitting element, and the capability of the light receiving element. However, for the sake of simplicity, the embodiments of the present invention will be described hereinafter with half absorption and half transmission.

Photodiodes are classified into a front illuminated type (as shown in FIG. 7) and a back illuminated type (incident from the substrate side). In any case, the opposite side of a conventional photodiode is shielded by an electrode so that light does not leak.
It can be said that all light is absorbed by the light receiving element. Instead, the light receiving element used in the present invention uses a transmissive light receiving element, which is also a transflective light receiving element. The transflective light receiving element (photodiode) itself is novel.
The present invention is not limited to this, and a light emitting element is provided immediately after such a light receiving element to form an optical transceiver module. This is a very novel device in which the light receiving element and the light emitting element are linearly arranged.
In addition, the photodiode is provided with a condensing lens to converge light from the light emitting element to enter the optical transmission path. A lens for the light emitting element, not for the light receiving element itself, is built into the light receiving element.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Why are conventional optical transceiver modules large and expensive? The present inventor has thought variously about the cause. Conventional optical transmission / reception modules use optical demultiplexers. Why do we need an optical demultiplexer? In order to realize two-way communication with one optical fiber, light must be divided into going and returning. Therefore, in the conventional optical transmitting and receiving module, the optical demultiplexer was essential.

In the optical fiber couplers of FIGS. 1 and 2 and the multilayer mirror of FIG. 3, the light intensity is always half or the designed branching ratio. The ratio of the amount of light that enters the optical fiber from the laser and the ratio of the amount that exits the optical fiber and enters the light receiving element is complementary. That is, the coupling efficiency T of the laser
Is increased, the light receiving efficiency R of the photodiode decreases. Because of the use of bifurcations, T
+ R = 1. There is such a thumb rule even if there is no loss. For example, T = 0.5 and R = 0.5. This is an unavoidable difficulty as long as the system uses one wavelength.

Here, for the sake of simplicity, let us proceed to the case of a 1: 1 branch. Furthermore, the reason why the optical fiber optical splitter and the mirror optical splitter are used is that it is necessary to clearly distinguish the optical paths of the light emitting element and the light receiving element.
If the optical demultiplexer shown in FIGS. 1 to 3 is used, the optical path is clearly divided into two. It seems natural to split the optical path in two because the light flows in different directions.

There is an error in common sense. Don't be preoccupied with prejudice. Is it really necessary to divide the optical path into two using the branch? It may be necessary if transmitting and receiving at the same time. However, here, it is limited to ping-pong transmission. In the case of ping-pong transmission, transmission and reception times are different. It is sufficient that the laser emits light during transmission and that only the photodiode operates during reception.

The inventor has noticed that branching the optical path is not essential for ping-pong transmission. Even if the photodiode and the laser diode are placed in series on one optical path, the laser light should reach the optical fiber if the photodiode transmits some light. The present invention has been made based on such an idea. That is, in the present invention, the optical transmission line, the semi-transmissive light receiving element, and the light emitting element are arranged in series on one optical path. The difference from the conventional module lies in the non-branching linear type and the light-receiving element semi-transmission type.

FIG. 9 shows the principle of the present invention. An optical fiber 62, a photodiode 64, and a laser diode 70 are arranged in series on the same optical path. The photodiode 64 has a light receiving layer 65 on a front surface 66 and a built-in lens 74 on a rear surface 67. This is a lens in which the substrate side of the light receiving element is formed in a hemispherical shape by etching. This is a semi-transmissive photodiode in which the light receiving layer (absorbing layer) is thin and half of incident light passes through. The laser diode 70 is located behind the laser diode 70. The light receiving layer 65 of the photodiode and the light emitting layer 71 of the semiconductor laser 70 are arranged on the optical path of the optical fiber. The transmission light from the semiconductor laser 70 is condensed by the crop lens and efficiently enters the core of the optical fiber. Since light from a semiconductor laser or a light emitting diode diverges, it does not enter a single mode optical fiber without a lens. In the present invention, since a built-in lens is provided in the light receiving element, a separate lens is not required. This is, of course, a conceptual diagram, and actually more specific measures are taken. The end face 69 of the optical fiber is cut obliquely, and the chip is housed in a package.

First, the received light will be described. Light from the station side that has propagated through the optical fiber 62 is
Out of the end face of the N. A. The light 63 spreads at an angle determined by the (numerical aperture). This enters the light receiving layer 65 of the photodiode 64 immediately before. Here, about half of the light is absorbed. The absorbed light turns into an electrical signal. About half of the light is transmitted. The transmitted received light 68 enters the semiconductor laser 70, but there is no problem because it is ping-pong transmission and the reception time is different from the transmission time. When light is emitted from the optical fiber, the semiconductor laser does not emit light.

Next, the transmitted light is emitted from the light emitting layer 71 of the semiconductor laser 70. Approximately half is absorbed by the light receiving layer 65 from the back surface 67 of the photodiode 64. This is a loss. The other half of the light exits the surface 66 into space. The transmitted laser light 73 is transmitted through the built-in lens 7.
4 converges and enters the optical fiber 62. In this way, about half of the received light is received, and about half of the transmitted light can enter the optical fiber. In each case, about half is lost.

The basic idea of the present invention utilizes the basic physical phenomenon that light travels straightforwardly. Furthermore, a photodiode absorbs all light,
Contrary to the conventional idea that it is better to obtain a sensitivity close to 0%, the present invention absorbs only half of the incident light and performs photoelectric conversion,
The other half uses a completely new photodiode that transmits and has an integrated lens. In the conventional bidirectional module, the optical path of the light-receiving element and the light-emitting element has been captured by a firm prejudice that the optical path must be different, so the optical path was forcibly bent and an optical demultiplexer was used. Since there is no branch, the present invention does not require an optical demultiplexer. Since there is a built-in lens, a separate lens is unnecessary.

According to the present invention, since the semi-transmissive photodiode and the laser are arranged on the axis of the optical fiber, the following effects can be obtained. One is that an optical coupler (optical demultiplexer) is not required. The other is that all components can be accommodated in one package, so that the module can be downsized. Since the lens is integrated with the light receiving element, there is no need for troublesome alignment. Furthermore, since the number of parts is small, the module is inexpensive. Inexpensiveness is most important for widespread use of optical communication, but the present invention meets such a demand.

Here, a method of manufacturing a built-in lens (monolithic lens) will be described. Some proposals have been made to incorporate a lens into a light receiving element. However, in each case, an independent spherical lens for condensing light on the light receiving element is omitted to reduce the cost, and the light receiving element is simply provided. Without exception, the light was condensed by a built-in lens to increase the light receiving sensitivity of the light receiving element. Naturally, the focal length was extremely short and the curvature was large (the radius of curvature was small). A curved surface with a remarkably strong height difference was required.

The lens provided in the light receiving element in the present invention is not such a lens. This lens converges transmission light from a laser that is separated rearward and couples it to a fiber in front. The image of the end face of the optical fiber by the lens can be formed not on the light receiving layer of the light receiving element but on the laser end face. The curvature is smaller and the radius of curvature is larger. The difference in height is small. Since the light receiving element is designed to transmit half of the laser light, the light receiving element functions as a lens for the laser. Although the basic concept is different from the present invention, a conventional example of a lens having a light receiving element will be described first.

M.MAKIUCHI, O.WADA, T.KUMAI, H.HAMA
GUCHI, O.AOKI, Y.OIKAWA, "SMALL-JUNCTION-AREA GaInA
s / InP pin PHOTODIODE WITH MONOLITHIC MICROLENS ", E
LECTRONICS LETTERS, vol.24, No.2, p109 (1988)

This is an InP using InGaAs as a light receiving layer.
This is a lens in which a part of a spherical surface is formed on the bottom surface of an InP substrate of a system photodiode. Chip size is 200
μm × 200 μm. The radius of curvature of the spherical lens is 55
μm. The lens aperture is 50 μm. The central angle of the curved surface is as large as 2 tan ^-1 (25/55) = 50 °. Since the focal length of the uniconvex lens is R / (n-1), in this case, it is extremely short, about 20 to 40 [mu] m.

A photoresist is applied to the bottom surface of the substrate in a lens shape (not a uniform thickness), and the bottom surface is etched. Portions without photoresist are uniformly etched.
This etch has the ability to etch the photoresist as well. Since the photoresist has a convex lens shape, the vicinity of the periphery of the photoresist is etched deeper, and the center is etched shallower. The result is a convex lenticular ridge. This lens converges light and concentrates it on the light receiving layer. All the collected light is absorbed by the light receiving layer of the photodiode.

Although the present embodiment is the same in that a built-in lens is provided on the light receiving element chip, the function of the photodiode and the purpose of condensing the lens are different from those of the present invention and these conventional examples.
We need to make a clear distinction between the two.

FIG. 17 shows a light beam when a light beam from an optical fiber enters a light receiving element having a built-in spherical lens according to a conventional example. A beam emerges from the end point G of the optical fiber. The beam travels while spreading in a cone. Let the axis be GT. A spherical lens b and a light receiving surface (light receiving layer) Q are shown. The light receiving surface Q is on the opposite side of the fiber. There is a p-electrode covering the entire surface on the light receiving surface. Since the lens must be on the fiber side, it is a back-illuminated photodiode. The substrate closer to the optical fiber is the substrate and the ring-shaped n
An electrode is formed. The curved surface of the lens formed on the substrate is NL
bJH. GH and GN are the aperture angles (si
n ⁻¹ (n ₂ / n ₁ )) corresponds to a full spread. The aperture angle is determined by the refractive indices n ₂ and n ₁ of the cladding and the core.
Here, θ = 5.7 °. 1. Half the opening angle
Beams having a spread of 9 ° are indicated by GJ and GL.

In this element, a lens having a part of a spherical surface is formed on the substrate side (etching the substrate).
GH are condensed and enter the light receiving surface and are all absorbed. Since all the light enters through the lens, the light receiving sensitivity is enhanced. In this example, the radius of curvature of the lens is 100 μm. The distance between the light receiving element and the optical fiber is 500 μm. As described above, a light receiving element in which a lens for condensing light on the light receiving layer of the light receiving element is already proposed. It can be clearly seen that the conventional example of FIG. 17 has a different purpose and function from those of the present invention shown in FIGS.

Next, how the built-in lens is formed on the light receiving element will be described. As shown in FIG. 18A, a resist 82 is formed in a hemispherical shape on the back surface of the InP base 80 plate. Then, the InP substrate 80 is irradiated with an argon ion beam 83.
Then, the resist 82 is ion-etched. The portion 86 initially covered by the resist 82 remains as it is. The uncovered back surface portion 81 is uniformly etched.

However, since the etching also removes the resist 82, it becomes as shown in FIG. The part covered with the resist gradually loses its protection by the resist and gradually becomes exposed. Since the resist thickness has a gradient, this portion becomes an inclined surface 87. When the resist 82 is entirely removed, a hemispherical protrusion is formed as shown in FIG. This is the built-in lens 74. This corresponds to the lens 74 in FIGS.

[0046]

【Example】

[Embodiment (FIG. 9: Built-in lens faces LD)] In the embodiment of FIG. 9, a photodiode (PD) 64 with a lens and a semiconductor laser (LD) 70 are connected in series on the axis of an optical fiber 62. Are arranged. Photodiode 6
Reference numeral 4 designates a thin active layer (absorbing layer) or other epitaxially grown layer provided on the substrate. Since the active layer is thin, only about half of the light is absorbed and the rest is transmitted as it is. In the case where the active layer is InGaAs (λg = 1.67 μm), if the thickness of the active layer is 0.7 μm, just half light is absorbed and half is transmitted. This is because α = 1 μm ⁻¹ . When the active layer is InGaAsP (λg = 1.4 μm),
When the thickness of the active layer is 1 μm, half transmission and half absorption are obtained. This is because α = 0.7 μm ⁻¹ . Roughly 0.
Since 5 = exp (−0.7), 0.7 / α gives an active layer thickness of absorption: transmission = 1: 1.

Although the laser beam spreads greatly, the diameter of the single mode fiber 62 is only 10 μm, so that the laser beam does not enter the fiber as it is. Therefore, a laser image is formed on the end face of the fiber by the lens 74 formed in the light receiving element. The coupling efficiency between the laser and the optical fiber can be increased by the monolithic lens 74 of the light receiving element. Instead of increasing the amount of light incident on the light receiving element itself, a lens is provided in the light receiving element so that light from the light emitting element easily enters the optical fiber. Such is unparalleled.

FIG. 11 shows the convergence action of the built-in lens 74. This is to converge the light of the semiconductor laser and enter the end face of the optical fiber. The purpose is to increase the coupling efficiency between the semiconductor laser and the optical fiber. The purpose is not to converge the received light entering the light receiving element. In other words, the light receiving element is merely a lens when viewed from the laser. Laser is 300μ
It is assumed that m × 300 μm × 100 μm. The light emitted from the single mode optical fiber spreads at a spread angle of 5.7 °. On the other hand, the light emitted from the laser has a divergence angle of 15 ° (half). The lens calculated the radius of curvature under the condition that the lens refracts and converges the 15 ° divergent beam of the laser and makes it incident on the fiber at 5.7 °. The refractive index of InP with respect to 1.3 μm light is 3.5.

In the same example, the thickness of the light receiving element is 100 μm,
The diameter (light receiving diameter) of the light receiving layer is 80 μm. For example, the radius of curvature of the built-in lens is 100 μm. The distance between the light receiving element and the optical fiber was 140 μm, and the distance between the lens and the laser was 50 μm. With this configuration, the sensitivity is 0.45 A / W,
1 mW (current 30 mA) coupling power to the optical fiber was obtained.

This is only an example. The relationship between the parameters will be further clarified by FIG. The center F of the optical fiber end face, the center G of the flat face of the light receiving element, the center H of the light receiving element lens, and the center K of the laser end face are aligned on the same optical axis FK. It is assumed that the curved surface of the lens is centered at a point J on the optical axis and has a radius of curvature R. The thickness of the light receiving element (lens) is L
And Let n be the lens refractive index. Let A be the distance between the laser end face K and the lens center H. Let B be the distance between the center G of the flat surface and the center F of the optical fiber. For simple thin lenses,
The focal length f that satisfies A ^-1 + B ^-1 = f ^-1 is determined. However, such a thick lens is not so simple. Although not simple, there should be a unique relationship between the distances A and B in the case of paraxial light. What is done here is to obtain the formula of a thick-walled, plano-convex lens.

[Formula of Built-in Lens] Assume that light emitted from the laser K at an angle Ψ with the optical axis enters the lens at a point T on the lens surface. Let HT = s. ∠ Let TJH = θ. That is, the light is incident on a point T which forms an angle θ with respect to the axis. The point T is separated by s from H. Here, it is assumed that the light is refracted so as to form an angle β with the radius JT, travels in the light receiving element, and reaches a point W on the flat surface. It is assumed that WG = t. It is assumed that the light was successfully incident on F from W toward the center F of the optical fiber. The angle of incidence on the optical fiber is φ.近似, φ, θ, etc. are linearly approximated as sufficiently small values. Of course, calculation can be performed without linear approximation, but it becomes complicated. Here, it is made linear for convenience of explanation. The following six equations hold between these parameters.

S = AΨ = θR (1) nβ = Ψ + θ (2) s = t + L (θ-β) (3) t = φB (4) φ = n (θ-β) (5)

(1) includes two equations. This indicates that the length s of the HT is AΨ when viewed from K, and Rθ when viewed from J. (2) is Snell's law at the point T. With respect to the base line JT of refraction, the incident angle is θ + Ψ, and the refraction angle is β, which is like this. The sin function has been linearized. (3) expresses the difference between the deviation s of the incident point T and the deviation t of the exit point W due to the bending of the light beam in the lens L.

The downward tilt of the beam in the lens is (θ−
β), the shift is reduced by the length L multiplied by the length (s → t). This is why it is a thick lens. In (4), since the angle at which W is viewed from the optical fiber is φ and the distance is B, the product Bφ gives the deviation t of W.
(5) is Snell's law at the W point. In addition to Snell's law, four distance conditions are imposed.

When the angle expression is summarized by φ, θ−β = φ /
n, θ = φ {n−1− (R / A)} ^{− 1} ,
Substituting into (1), (3), and (4),

Rφ {n−1− (R / A)} ⁻¹ = φB + φL / n (6)

Is obtained. Pay the denominator except φ,

{B + (L / n) {n-1- (R / A)} = R (7)

This is the formula of the lens of the present invention. Since L and R are determined by the arrangement of the lenses, when the distance A between the lens and the laser is determined, the distance B from the flat surface to the point where the image is formed is known. Light enters the optical fiber. It has a very complicated shape. In the limit of L → 0, the formula for the thin lens described above is f = R / (n−1).

The equation (7) indicates that the radius of curvature R and the thickness L of the lens are
Is determined, it becomes a guide on what to do between the lens (light receiving element) and the laser A and between the lens and the optical fiber B.

However, this only tells where to place the laser and optical fiber when the lens is already provided. I will not be silent about how to design the lens. How do you optimally design a lens? This depends on the characteristics of the laser and the aperture angle of the optical fiber.

That is, the optimum lens can be determined in consideration of the spread angle of the light emitted from the laser and the spread angle of the light of the optical fiber. For example, in the case of a certain single mode optical fiber, half of the spread angle of light is 5.7 °. In some lasers, the half of the spread angle of the emitted light is 15
゜. Of course, the laser beam has a skirt like Gaussian, but the spread is roughly 30 ゜ (15 ゜ in half)
That is.

Then, how much laser light is introduced into the optical fiber? This determines the guidelines for lens design. For example, if all the light included in the 15 ° emitted from the laser is greedyly attempted to enter the optical fiber, a condition is given that the light emitted at an angle of 15 ° from the laser is incident on the optical fiber at 5.7 °. Good.

As a result, another equation for the laser-lens distance A, the radius of curvature R, and the lens-optical fiber distance B is obtained. Since the lens formula (determining the relationship between A and B) was obtained earlier, R can be obtained as a function of A by cooperating with the formula. Since this relationship is unique, the design of the lens can be performed.

[Design of Lens] In the above calculation, φ,
θ, β, Ψ, etc. were variables. This time, the divergence angle レ ー ザ of the laser beam (eg, 15 °) and the divergence angle φ of the optical fiber (eg, 5.7 °) are fixed, and the laser light emitted at Ψ is φ
Consider the above equation again as entering the optical fiber at an angle of? This time, it is assumed that R is a parameter. Equation (3) gives the basic constraint condition of the lens. Substituting (1), (4) and (5) into (3),

AΨ = φB + Lφ / n (8)

Is obtained. Here, φ, Ψ, L, and n are known numbers. (8) determines the relationship between A and B. It seems strange that the relationship between the two is determined without R, but it is not. On the other hand, R is fixed to a certain number. In that sense, (8) is an intermediate expression, but it has some convenience.

This is because A is determined when B is determined, and B is determined when A is determined. Let's try it concretely. Optical fiber divergence angle φ = 5.7 ° =
Since 0.1 (radian), Ψ = 15 ゜ = 0.26 (radian), and n = 3.5, for example, if the thickness of the light receiving element is L = 100 μm, it is easy.

2.6A = B + 28.6 (9)

The result is as follows. For example, if the distance A between the laser and the lens is 50 μm, the distance B between the light receiving element and the optical fiber is B
= 101 μm (case). A more wide
= 64 μm, B = 138 μm (case). If A = 90 μm, B = 20
5 μm (case).

Since A and B are determined in this way, if these are included in the lens formula (7), the radius of curvature R of the curved surface can be calculated. This means that the lens has been designed. It can be easily understood by substituting (8) for (7).

[0072]

(Equation 10)

Is obtained. Assuming the above parameters, φ = 0.1, Ψ = 0.26, and n = 3.5,

R = 1.80 A (11)

Is obtained. In the above cases, A = 50 μm, B = 101 μm, R = 90 μm A = 64 μm, B = 138 μm, R = 115 μm A = 90 μm, B = 205 μm, R = 162 μm.

The expressions (7), (8) and (10) have generality. This holds true no matter what φ or Ψ is. L has an arbitrary property, which is a thickness of the light receiving element and is determined by conditions such as ease of manufacturing the light receiving element. Once L is determined, there is only one free variable. When one A is determined, B and R are automatically determined. Thus, the optimum design of the lens can be achieved.

In the above example, given the laser divergence angle レ ー ザ and the optical fiber divergence angle φ, almost all the light of the laser enters the optical fiber (here, 50% absorption in the light receiving layer is out of the question). You should have a lens design as you should.
However, if all the light of the laser does not need to enter the optical fiber, A can be made wider because the value of Ψ becomes smaller. Then, R can be increased and B can be decreased on the contrary. Not only lasers but also light emitting diodes can be handled in the same way. In that case, Ψ will be wider, so B will be longer and A will be shorter. Although φ is small because it is a single mode optical fiber,
If this is a multimode, φ can be made wider,
B can be shorter and A can be longer. A is determined in consideration of the dimensions of the package, and R and B are determined.

[Embodiment (FIG. 10: Built-in lens on the optical fiber side)] The second embodiment shown in FIG.
D) 64 and a semiconductor laser (LD) 70 are arranged in series. The lens 74 faces the optical fiber, and the light receiving layer 65 faces the laser 70. Also about half of the transmission light of the semiconductor laser is absorbed by the light receiving element. Only about half of the received light is perceived by the light receiving element. Such circumstances are the same as in the embodiment. Since the lens 74 is on the optical fiber side, the received light reaches the light receiving layer through the substrate. However, the substrate is InP, has a wide band gap, and does not absorb received light.

[Embodiment (FIG. 12: Addition of Monitoring Photodiode)] This laser can emit not only the front light 72 but also a part of the light 77 in the rear direction. A photodiode 85 for monitoring is provided further behind the end face 76 behind the laser 70. Since the backward light 77 of the laser enters the light receiving surface 84, the intensity of the laser light can be monitored. Rather, conventional laser modules are
Generally, the laser and the monitor PD are housed in one package. Therefore, the optical transceiver module of the present invention can be easily manufactured by adding a semi-transmission type PD with a lens to such an existing device.

[Example (FIG. 13: Incline the surface so that no returning light enters the laser)] End surface 69 of optical fiber 62
Is cut obliquely so that when the laser light 73 is reflected by the end face 69, it becomes oblique light 78 so as not to return to the laser. Further, photodiode PD6 with an intermediate lens
4 is also inclined so that the reflected light 79 from the rear lens 74 travels in an oblique optical path and does not enter the laser 70. It prevents return light and prevents unstable operation of the laser. The oblique cutting angle of the optical fiber is about 4 to 8 degrees. Since the inclination of the reflected light is twice as large, it does not return to the laser.

[Embodiment (FIG. 14: Structure of Transflective Photodiode with Lens: Planar Type)] One of the salient features of the present invention lies in its unique photodiode. It transmits light unlike ordinary photodiodes. Moreover, about half of the light is absorbed and detected, and about half of the light is transmitted. Both sides of the PD are not closed by the electrodes. It has an integrated lens on either side. The absorption layer (light receiving layer) is thin. The conventional light receiving element has a light receiving layer of 4 μm to 6 μm, but the light receiving layer of the present invention has a light receiving layer of about 0.7 μm (in the case of InGaAs) to 1 μm.
μm (in the case of InGaAsP). The light receiving layer is determined to transmit about half of the light.

FIG. 14 shows a cross section of an example of the photodiode. This is an example of an InGaAs photodiode having a sensitivity of 1.0 μm to 1.6 μm. The difference from the conventional example shown in FIG. 7 is that about 50% of the light is transmitted. On the InP substrate 90, I
nP buffer layer 91, InGaAs light receiving layer 92, InP
The window layers 93 are epitaxially grown in that order. In
The GaAs light receiving layer 92 is thinner than the conventional light receiving layer.

A circular p-type region 94 is formed from the center of the upper surface by zinc diffusion. A portion of the InGaAs light-receiving layer 92 which has become a p-type region and an n-type InGaAs immediately below the portion.
The layer corresponds to the light receiving layer 65 in FIGS. p-type region 9
A ring-shaped p-electrode 95 is provided on the upper surface of 4. The inside of the ring electrode 95 is a region where light is to be incident, and an antireflection film 96 is formed. Dielectric multilayer film with signal light λ
Are all reflected into the InP window layer with little reflection. The outside of the ring electrode 95 is a passivation film 97.
There is. The passivation film covers the edge of the PN junction with the window layer 93.

On the bottom surface of the InP substrate 90, a convex lens 74 is formed. A ring-shaped n-electrode 98 is provided which is connected not to the entire back surface but only to the outer portion. Ring n electrode 9
The area surrounded by 8 is covered with an antireflection film 99. Both the p-electrode and the n-electrode are electrodes whose central portions are open. Approximately 50% of the incident light entering from the top exits the lower opening.

There are two conditions for achieving this. One is the ring shape of the n-electrode, and the other is InGaAs.
This means that the s layer is made thinner (thin light receiving layer). The former can be clearly seen from the drawings. Since the thinning is difficult to understand only from the drawings and is an important feature of the present invention, it will be described in detail below.

Consider a case in which light enters a solid, passes through the inside, and exits on the opposite surface. The transmitted light is obtained by subtracting the reflection on the front surface of the solid, the reflection on the back surface, and the absorption inside the solid from the incident light. The reflection on the front and back surfaces can be reduced to a level that does not cause a problem by providing an antireflection film. Also in this example, the reflection on the front and back surfaces is extremely reduced by the antireflection films 96 and 99. The main loss is absorption loss inside the solid. In such a case, the light transmittance T is represented by α as the solid light absorption coefficient and d as the thickness.

T = exp (−Δαd) (12)

Is represented by Σ means that the product αd is calculated for each solid through which light passes, and the sum of them is obtained. Since approximately exp (−0.7) = 0.5, a layer having a thickness d (= 0.7 / α) where αd becomes 0.7 absorbs half of the light and transmits half of the light. The window layer, substrate and buffer layer are made of InP. InP has a wider band gap than InGaAs. Light having an energy smaller than the band gap can pass through the solid as it is. Since the signal light is 1.0 μm to 1.6 μm, it is hardly absorbed by InP. It is absorbed only by the InGaAs light receiving layer (n type + p type). Therefore, it is sufficient to consider only the InGaAs light receiving layer. Here, simply InGaAs
However, the composition ratio of In and Ga is actually determined. This is because lattice matching must be performed with the InP substrate.

For 1.3 μm light often used in optical communication, the absorption coefficient of the InGaAs light-receiving layer is α = 10 ⁴ cm ^−1.
= 1 μm ⁻¹ . Conventionally, the only purpose is to increase the detection efficiency by absorbing all the light, so that an InGaAs light-receiving layer that is too thick of 4 to 6 μm has been used. Since the present invention wants a finite (about half) absorption, the thickness d must be chosen carefully. FIG. 15 is a calculation result showing a relationship between the thickness d and the transmittance T with respect to the value of α. The horizontal axis indicates the thickness d (μm) of the InGaAs light receiving layer, and the vertical axis indicates the transmittance T (%). It is about 60% at 0.5 μm, about 50% at 0.7 μm, and about 40% at 0.9 μm. 3 at 1 μm
It drops to 6%.

If 50% transmission and 50% absorption are desired, the InGaAs thickness may be set to d = 0.7 μm. This value is surprisingly thin. In the past, it was designed with a view to absorbing all light, so it was thick as shown on the left (4
６6 μm). The present invention uses an extremely thin light-receiving layer of about 1/8 of the conventional photodiode. The photodiode having such a thin light receiving layer is excellent and new.

A method for manufacturing the planar photodiode shown in FIG. 14 will be described. The starting substrate is a sulfur S-doped n-type InP substrate. The thickness is 300 μm and the carrier concentration is n = 5 ×
It is 10 ¹⁸ cm ^-3 . A high-purity InP buffer layer having a thickness of 2.5 μm was grown on the substrate.

On the buffer layer, a high-purity InGaAs light-receiving layer (absorption layer) was grown to a thickness of 0.7 μm. The carrier concentration of InGaAs is n = 1 × 10 ¹⁵ cm
It is ^-3 . An InP window layer having a thickness of 1.5 μm was grown on the absorption layer. The carrier concentration is n = 2 to 3 × 10 ¹⁵ cm
It is ^-3 . For these epitaxial growths, chloride vapor phase epitaxy (C-VPE) using chloride was used. The present invention is not limited to this, and an MO-CVD method using an organic metal may be used.

Next, zinc is selectively diffused on the window layer using SiNx as a mask. A p-type region 94 is formed in a portion corresponding to the center of the chip. This extends to a part of the window layer 93 and the InGaAs light receiving layer 92. A ring-shaped p-electrode 95 is formed on the periphery of the p-type region. This is AuZn
An alloy p-electrode. Next, a built-in lens 74 is formed on the back surface of the InP substrate by photolithography and etching. Further, a ring-shaped n-electrode 98 is provided on the back surface of the n-type InP substrate. This is an AuGeNi alloy electrode.

The portion surrounded by the p-electrode on the front surface and the portion surrounded by the n-electrode on the back surface are portions through which light is transmitted. It is necessary to prevent reflection. Λ / 4 of SiON (λ =
A 1.3 μm) antireflection film is formed inside the ring electrode. 1.3 of the photodiode thus manufactured
The transmittance T for μm was about 50% as designed.

Embodiment (FIG. 16: Structure of Transflective Photodiode: Mesa Type) FIG. 14 shows a planar type photodiode, but the present invention can of course be applied to a mesa type photodiode. FIG. 16 shows an embodiment of the mesa photodiode. On the n-type InP substrate 100,
An n-type InP buffer layer 101, an n-type InGaAs light receiving layer 102, and ap + -type InP window layer 103 are epitaxially grown. On the upper surface of the p ⁺ -type window layer 103, a p-electrode 104 on a ring is provided. Since the central portion is an entrance through which light passes, the antireflection film 105 is formed. n-type InP substrate 10
A convex lens 74 is formed on the back surface of the zero. A ring n-electrode 109 is provided around the rear surface of the substrate so as to surround the lens. The central lens portion is covered with an anti-reflection film 110.

In the case of the mesa type, it is called a mesa because the upper portion is narrow and resembles a plateau. In this case, a p ⁺ -type InP window layer is epitaxially grown directly on the InGaAs layer without zinc diffusion. The periphery of the epitaxial layer is removed by etching to form a mesa shape. The exposed side inclined surface is covered with a passivation film 106 of SiNx. The carrier concentration of the p ⁺ InP window layer is p = 1-5 × 1
0 ¹⁸ cm ^-3 . The thickness of the InGaAs light receiving layer (absorption layer) is 0.7 μm. This is also about 5 μm for 1.3 μm.
The transmittance was 0%.

[Example (FIG. 19: PD in Package)
LD- and PD-containing elements)] The disk-shaped metal header 111 has four lead pins 112, 11 protruding from the lower surface.
3, 114, and 115. The pole 119 is slightly deviated from the center of the upper surface of the header 111. A semi-transparent PD chip with lens 64 mounted on the submount 120 is fixed horizontally on the upper top surface of the pole 119. The LD attached to the submount 122 is provided on the side surface of the pole middle part.
The chip 70 is fixed.

A monitor PD 85 is mounted via a submount 123 directly below the LD axis and at the center of the upper surface of the header. This PD monitors the intensity of the laser light emitted downward. The inclination (12 degrees) is to prevent reflected light from returning to the laser and causing unstable operation. These three elements are arranged in series on one straight line. A cap 124 having a glass window 126 for fixing the three elements is fixed to the upper surface of the header 111.

FIGS. 19 (b), (c) and (d) show examples of the submount 120 for mounting the PD 64. FIG.
The submount in (b) has a notch 128 and is metallized 130 on the entire front and back surfaces. The bottom electrode n of the photodiode chip is soldered to metallization 130.
The upper p-electrode is connected to the pin 114 by a wire. Part (c) of the submount has a metallization 129 to which an n-electrode is soldered. It is further connected to the pins 115 by wires. The submount of (d) has no notch 128, and
32 is pierced to allow light to pass therethrough. The built-in lens is mounted so as to fit into these notches and through holes.

As a semiconductor laser, a 1.3 μm InGaAsP laser chip was used. The LD chip size is 300 μm × 300 μm × 100 μm (thickness).
This is fixed to an AlN submount. The photodiode is an InGaAs PD as described above. The PD chip size is 450 μm × 450 μm × 300 μm (thickness). The light receiving section is circular and has a diameter of about 200 μm.

The laser chip 70 was soldered to the AlN submount 122 with AuSn. Semi-permeable (5
0% transmission) The photodiode chip 64 is mounted on the Al ₂ O ₃ submount 120, and the monitor photodiode 85 is mounted on the A
It was soldered to the l ₂ O ₃ submount 123 with AuSn. These submounts were soldered to the header by SnPb solder in the order of monitor PD, LD, and 50% PD.

As described above, the submount 120 is (b)
Things like (d) can be used. N electrode of each chip,
The p-electrodes are each connected directly to ground by solder or to pins by wires. If all three elements share the ground,
All wiring can be performed by four lead pins.

Next, the cap with glass window 124 is fixed to the header 111. Since the glass window has no light-collecting action, it is not necessary to align the cap. The cap is welded and fixed to the header at a position where the center of the header 111 and the center of the cap 124 substantially match. The reason why the cap may be one with a glass window instead of one with a lens is that the light receiving element has a built-in lens. Caps without ball lenses are inexpensive. Also, since there is no need for alignment, installation is easy.

A package in which the three elements thus formed are contained in a package is called a transmitting / receiving device. This alone can be used as a device. However, it can also be made into a pigtail type module including a connection with an optical fiber or a receptacle type module.

Embodiment (FIG. 20: Example of Pigtail Type Module) FIG. 20 is a cross-sectional view of a pigtail type optical transmission / reception module of the present invention. The ferrule holder 13 is further placed on the header 111 described above.
3 is fixed. The tip of the single mode fiber 62 is inserted and fixed in the ferrule 136, and the tip 137 is obliquely cut at 8 degrees. This ferrule 136 is inserted into the central shaft hole of the cylindrical ferrule holder 133 made of stainless steel. The elastic bend limiter 134 is
It is attached to 3. Prevents excessive bending at the root of the optical fiber.

A PD 64 with a lens and a laser 70 are placed on the optical axis where the light emitted from the optical fiber travels. 1.3 μm light is oscillated by the laser, and while monitoring the amount of light at the other end of the optical fiber, the holder 133 is moved in the horizontal direction with respect to the header 111 to determine the optimum position. A part is Y
The holder 133 is fixed at that position on the header by AG laser welding. Further, the optimum position is obtained by moving the ferrule 136 in the axial direction with respect to the ferrule holder 133. The part B is YAG laser welded and the ferrule is fixed to the holder. After performing double alignment in this way,
The holder 133 and the ferrule 136 were fixed.

1.31 μm light was incident on this module, and the sensitivity of the photodiode 64 was measured. When the applied voltage was 5 V, a sensitivity value of 0.43 A / W was obtained. In a normal receiving module, a sensitivity value of 0.85 A / W is normally obtained. That is, the sensitivity value was about half that of a normal PD. The result was as designed.

Further, a driving current of 30 mA was passed through the LD 70, and the coupling power to the optical fiber (the power emerging at the other end of the optical fiber) was measured. The result was 0.29 mW. In this embodiment, laser light is focused by a spherical lens. The standard value of the coupling power in a laser module using a spherical lens is 0.6 mW. As for laser light, half power can be taken out as compared with a normal module. This is also as designed.

The above is a static property. The operation with respect to the pulse signal light was also examined. Commonly used in optical communication 1
An optical signal of 55 Mbps was used. Receiving a 155 Mbps pulse signal and driving a laser at 155 Mbps to transmit an optical signal were alternately repeated. The PD module and the LD module are connected by an optical fiber coupler, and there is no inferiority to the conventional transmission / reception system in which the LD and the PD are operated alternately. There was no problem.

[Embodiment (FIG. 21: Example of Receptacle Type Module)] When it is desired to make an optical fiber detachable, a receptacle type is used. As shown in FIG. A cylindrical LD fixing flange 140 is further fixed to the header in which the monitor PD, LD, PD with lens, and cap with glass window are attached. A dummy fiber 142 whose end face is obliquely polished is attached to the tip of the LD fixing flange 140. The end face of the female connector 143 is welded to the tip of the LD fixing flange.

An axial hole is drilled at the center of the housing. A sleeve 148 is inserted into the hole. A male screw portion 147 is cut on the outer periphery of the housing. A ferrule 155 is inserted through the housing of the male connector 150. The tip of the single mode optical fiber is fixed to the ferrule. This tip is not cut diagonally.
Although slightly rounded, it is rotationally symmetric about the axis. The key 156 determines the relative position in the circumferential direction.

The two connectors can be connected by inserting the ferrule 155 into the sleeve 148 and screwing the female thread 153 into the male thread 147. The leading end of the fiber contacts the trailing end surface of the dummy fiber. The optical fiber, laser, and PD are coupled via a dummy fiber. The purpose of using the dummy is to prevent reflected light from returning to the laser. This is because if the optical fiber 154 itself is cut obliquely, the optical fiber axis deviates from the optical axis, and if the optical fiber deviates from a predetermined direction, the optical fiber and the laser are not coupled.

[Embodiment (10) (FIG. 22: Example of module omitting monitor PD)] Since ping-pong transmission is used, no received light exists when the laser is emitting, and the receiving photodiode is idle. Will be. The receiving photodiode can then be used for monitoring the laser. At the time of reception, it is used to detect the original received light, and at the time of transmission, it is used to monitor the laser. By making one PD perform both functions of reception and monitoring, a photodiode for monitoring can be omitted. FIG. 22 shows such an embodiment. This is effective in reducing module costs.

[Embodiment (11)] (FIG. 23: Example of Module with Built-in Amplifier) An amplifier is provided near a receiving photodiode to amplify a photocurrent. As shown in FIG. Instead of taking out the photocurrent generated by the photodiode to the outside through the pin, the photocurrent is amplified by an amplifier 160 provided at a close position and then output to the outside. The amplifier 160 can use, for example, a Si amplifier chip. This is photodiode 6
4 and placed on the same submount 120. The electrodes of the PD and the electrodes of the amplifier are connected by an Au wire. Since the photocurrent is immediately amplified, an output signal with less noise can be obtained. FIG. 23A shows a case where there is a monitor PD. FIG. 23B shows a structure in which the monitor PD is omitted.

[Electric Circuit Combined with Amplifier] FIG.
4 shows an electric circuit diagram. FIG. 24A shows a circuit example when there is a monitor PD. The cathode of the receiving PD is connected to the _VPD pin. A reverse bias of, for example, 5 V is applied to V _PD . The anode inputs to amplifier 160. The amplifier is driven by a power supply terminal V _CC and a ground terminal. The power supply voltage V _CC is 3.3 V, 5.5 V, or the like. The amplified output appears at the OUT terminal. The laser 70 has the anode grounded to the case.

The cathode is pulled by a negative voltage so that a drive current flows through the LD. The cathode of the monitor PD is also connected to the case, and the photocurrent is detected by the other monitor OUT. It is a simple circuit. FIG. 24B shows a circuit example when the monitor PD is omitted. The photocurrent of the receiving PD is amplified by the amplifier 160. It is the same, but the monitor OUT terminal is connected to the cathode side. Furthermore the load resistance R reverse bias voltage via the _PD is V _PD
Is applied.

As described above, OUT is set using the monitor resistor.
In addition to the method of obtaining the laser output from the voltage drop, the output of the amplifier is divided into the monitor output and the reception light output, and the reception light,
There is also a method of taking both of the laser light intensity signals from the amplifier.

[Embodiment (12): Mounted in a Box Type Package] The pigtail type and receptacle type modules have been described. In addition to such a longitudinal type in which the pin and the axis are parallel, the present invention can be housed in a horizontal package. FIG. 25 shows a box-type package in which a transmitting / receiving module is housed. FIG. 25A shows a fiber 62 and a PD.
64 is a plan view of only the LD 70. A semi-transmissive PD 64 with a lens on the axis of the single mode fiber 62,
There is a laser 70. Since InGaAsP is an active layer, the PD has a thickness of α = 0.7 μm ⁻¹ and a thickness of 1 μm in order to make absorption and transmission 50% each. The lens is on the laser side when the light receiving layer 65 of the PD is closer to the optical fiber.
This may of course be reversed. FIG. 25 (b) shows a state of being housed in a package.

The package is a box-shaped ceramic. A combination of the lower housing 171 and the upper housing 172 is provided. The box housing has four pins. The PD anode pin 173, the PD cathode pin 174, the LD cathode pin 175, the LD anode pin 176, and the like. Metallized 177, 178, 179, etc. are printed on the housing. The cathode and anode of the PD are connected to pins by metallization and plating.

The LD 70 is also fixed on the metallization.
The LD anode is connected to pin 176 by wire 180. The dimensions of the element are the same as in the example already described. The distance between the fiber and the light receiving element is 140 μm, and the thickness of the light receiving element is 10
The radius of curvature of the lens having a magnetic flux density of 0 μm is 100 μm, the distance between the apex of the light receiving element lens and the laser is 50 μm, and the laser length is 300 μm. The total length of the package is less than 2 mm. The whole becomes very compact, the number of parts is small, and the module becomes low cost and has high productivity.

The first to twelfth embodiments described above are only limited embodiments of the present invention. There are still some other variations. Here are some of them.

(1) The light receiving layer is made of InGaAsP (λg =
When using a light receiving element of 1.4 μm), α = 7000c
Since m ⁻¹ = 0.7 μm ⁻¹ , the thickness of the light receiving layer is set to 1.0 μm.
When m, absorption: transmission = 1: 1. This is 1.3
The light receiving element senses μm and does not sense 1.55 μm.

(2) The light wavelength is 1.3 μm as an example, but is not limited to this. The light may be 1.55 μm. 0.8
It can also be used in the μm band. In that case, a GaAs-based semiconductor laser and a low-cost Si photodiode can be used. Since the bandgap of Si is wide, the substrate portion is 0.1 mm.
Transmits 8 μm. Light is absorbed by the light-receiving layer, but 5
The thickness is reduced to achieve 0% transmission.

(3) The optical fiber may be a multi-mode fiber. In the multi mode, φ is larger, so that B becomes narrower and it becomes easier to balance with A.

(4) The partner of optical coupling is not limited to an optical fiber. It may be an optical waveguide. The light that has been subjected to complicated processing by the optical waveguide can be coupled to the optical transceiver module of the present invention.

(5) The transmittance of the photodiode is 50%
However, the present invention is not limited to this. Is stronger laser light better in the system, or should the photodiode sensitivity be prioritized? The transmittance can be selected in a range from several percent to 90 several percent. Thus, the present invention is a highly practical invention including a wide range of applications.

[0127]

In front of a photodiode with a semi-transmissive lens, which no one would have ever thought of,
By placing the laser behind it, the present invention has succeeded in eliminating the need for expensive and bulky optical couplers and lenses from the optical transceiver module. One ferrule is enough. In addition, one package can be omitted.
Since the optical coupler, ferrule, package, and lens are all expensive components, the cost reduction effect by omitting them is remarkable.

As a result, it becomes possible to mass-produce low-cost optical transceiver modules that are indispensable for bidirectional optical communication, particularly for optical subscriber systems. FIG. 23 illustrates the difference in structure between the present invention and the conventional example. FIG. 26A shows the configuration of a conventional module. Optical fiber coupler (optical demultiplexer) 21, independent LD module 25, independent P
D module 27, three optical connectors 17, 22, 23
is necessary. On the other hand, as shown in FIG. 26B, the present invention does not require an optical splitter, and requires only one optical connector, one ferrule, one module, and one package. Moreover, no lens is required. Lens alignment is not required. This is a significant improvement.

[Brief description of the drawings]

FIG. 1 is a schematic diagram illustrating bidirectional optical communication using light of one wavelength λ for transmission and reception.

FIG. 2 shows a 2: 1 optical demultiplexer using an optical fiber or an optical waveguide. When light of P1 is input from one input of one, it is output as output light P3 to the other, and the same light is output. FIG. 4 is a schematic configuration diagram illustrating that when a transmission light P4 is input to a fiber, the transmission light is propagated as P2 to one of the first optical fibers.

FIG. 3 is a configuration diagram of an optical demultiplexer using a glass block.

FIG. 4 is a diagram showing a configuration example of an optical transmission / reception module on the subscriber side in optical subscriber communication according to a conventional example.

FIG. 5 is a longitudinal sectional view of a semiconductor light emitting element module according to a conventional example.

FIG. 6 is a longitudinal sectional view of a semiconductor light receiving element module according to a conventional example.

FIG. 7 is a central longitudinal sectional view of a photodiode chip according to a conventional example.

FIG. 8 is a graph showing a wavelength sensitivity characteristic of a photodiode chip according to a conventional example.

FIG. 9 shows an optical fiber and a semi-transmissive photodiode with a lens (P) such that the light receiving layer of the PD faces the optical fiber.
D) is a schematic configuration diagram of the optical transceiver module according to the first embodiment of the present invention in which semiconductor lasers are arranged in a straight line.

FIG. 10 shows an optical fiber, a semi-transmissive photodiode (PD) with a lens,
FIG. 9 is a schematic configuration diagram of an optical transceiver module according to a second embodiment of the present invention in which semiconductor lasers are arranged in a straight line.

FIG. 11 is a schematic configuration diagram of an optical transceiver module showing an example of dimensions of each component of the first embodiment of the present invention in which an optical fiber, a semi-transmissive photodiode with a lens, and a semiconductor laser are arranged in a straight line. (A) is a top view which shows the example of a dimension.
(B) is a diagram showing a definition of a dimension parameter.

FIG. 12 is a schematic configuration diagram of an optical transceiver module according to a third embodiment of the present invention in which an optical fiber, a semi-transmissive photodiode with a lens, a semiconductor laser, and a monitor PD are arranged in a straight line.

FIG. 13 is a book in which an optical fiber, a semi-transmissive photodiode with a lens, and a semiconductor laser are arranged in a straight line, the end face of the optical fiber is cut obliquely, and the photodiode is tilted so that reflected light does not return to the laser. FIG. 13 is a schematic configuration diagram of an optical transceiver module according to a fourth embodiment of the present invention.

FIGS. 14A and 14B are a central longitudinal sectional view and a top view of a planar type transflective photodiode with a lens used in the present invention. FIGS. There are ring electrodes above and below, and a lens is formed on the bottom surface of the InP substrate.

FIG. 15 shows a graph of 1.0 μm used in an embodiment of the present invention.
In an InGaAs photodiode that can be used at a wavelength of about 1.6 μm, InGaAs (λg = 1.6 μm)
9 is a graph showing calculation results regarding the relationship between the thickness d (μm) of the light receiving layer and the transmittance T (%).

16A and 16B are a central longitudinal sectional view and a top view of a mesa-type transflective photodiode with a lens used in the present invention. There are ring electrodes above and below, and a lens is formed on the bottom surface of the InP substrate.

FIG. 17 is a schematic ray diagram showing light beam convergence of a conventional light-receiving element with a lens in which a lens for converging light to a light-receiving layer of the light-receiving element is provided on a light-receiving element substrate.

FIG. 18 is a process chart for explaining a method of forming an assembling lens on a light receiving element substrate. (A) shows a stage in which a hemispherical resist is applied and formed. (B) is a diagram showing a state during ion etching of the substrate. (C) is a diagram showing a state in which etching has been completed and lens-like protrusions have remained.

FIG. 19 is a vertical sectional view (a) of a module of the present invention in which a window glass, a PD with a 50% transmission lens, a laser (LD), and a monitor PD are linearly arranged and housed in one package, and a plan view of a submount ( b), a plan view of another submount (c), and a plan view of another submount (d).

[FIG. 20] A glass window, a 50% transmission photodiode with a lens, a laser, and a monitor PD are linearly housed in one package, and a ferrule holder is attached to the tip of the linear window.
FIG. 3 is a longitudinal sectional view of a pigtail type optical transceiver module of the present invention in which a package and an optical fiber are integrated.

FIG. 21 is a view showing the present invention in which a glass window, a 50% transmission PD with a lens, a laser, and a monitor PD are linearly housed in a single package, and a detachable connector is provided at the end thereof so that an optical fiber can be freely attached and detached. FIG. 3 is a longitudinal sectional view of the receptacle type optical transceiver module of FIG.

FIG. 22 is a longitudinal sectional view of a module in which a glass window, a 50% transmission photodiode with a lens, and a laser are housed in one package (a), a plan view of a submount (b), and a plan view of another submount (c). ), Plan view of another submount (d). The monitor photodiode is removed from that of FIG.

FIG. 23 is a longitudinal sectional view of an optical transmitting and receiving module including an amplifier for amplifying a photocurrent of a photodiode. (A) is an example provided with a monitor PD, and (b) is an example without a monitor PD.

24 is an example of an electric circuit of the module of FIG. 21. (A)
An example in which a monitor light receiving element is provided, and FIG.

FIG. 25 shows an embodiment in which the optical transceiver module of the present invention is housed in a box-type package. (A) is a plan view of only an optical fiber, a light receiving element, and a laser. (B) is a longitudinal sectional view of a state where the optical fiber, the light receiving element, and the laser are housed in a box-shaped package.

FIG. 26 is a simplified comparison diagram of a conventional example and a module of the present invention. (A) is a configuration diagram of a conventional example, which has a branch and LD and P
D is separated. Two lenses are required. (B) is a configuration diagram of the present invention. LD and PD are on the same straight line. No separate lens is required.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Optical fiber 2 Optical splitter 3 Optical fiber 4 Optical splitter 5 Optical fiber 8 Optical fiber 9 Optical fiber 10 Proximity part 13 Glass block 14 Glass block 15 Multilayer mirror 16 Optical fiber 17 Optical connector 18 Optical fiber 21 Optical fiber Optical splitter 22 Optical connector 23 Optical connector 25 Semiconductor laser module 27 Light receiving element module 28 Semiconductor laser module 29 Semiconductor laser chip 30 Photodiode chip 31 Pole 32 Header 33 Lead pin 34 Cap 35 Through hole 36 Lens holder 37 Lens 38 Housing 39 Ferrule Reference Signs List 40 optical fiber 41 light receiving element chip 42 header 43 lead pin 44 cap 45 opening (window) 46 lens holder 47 lens 48 housing 49 ferrule 50 Fiber 51 End face of optical fiber 52 n-InP substrate 53 n-InP buffer layer 54 n-InGaAs light receiving layer 55 n-InP window layer 56 zinc diffusion region (p-type region) 57 p electrode 58 antireflection film 59 passivation film 60 incident Light 61 n electrode 62 optical fiber 63 received light from optical fiber 64 transflective photodiode with lens 65 light receiving layer 66 front face of photodiode 67 back face of photodiode 68 transmitted received light 69 end face of optical fiber 70 semiconductor laser 71 semiconductor laser Emitting layer 72 Laser light 73 Transmitted laser light 74 Built-in lens 75 Condensing lens 76 Back end face of laser 77 Back light from laser 78 Oblique reflected light 79 Oblique reflected light 80 InP substrate 81 Back surface not covered with resist 82 Resist 83 Ion beam Mu 8 Light-receiving layer 85 Monitor PD 86 Back surface covered with resist 87 Curved surface formed by etching 90 n-type InP substrate 91 n-type InP buffer layer 92 n-type InGaAs light-receiving layer 93 n-type InP window layer 94 p-type region 95 p-electrode 96 Anti-reflection film 97 Passivation film 98 n-electrode 99 Anti-reflection film 100 n-type InP substrate 101 n-type InP buffer layer 102 n-type InGaAs light receiving layer 103 p ⁺ type InP window layer 104 p-electrode 105 anti-reflection film 106 passivation Film 109 n-electrode 110 anti-reflection film 111 header 112 pin 119 pole 120 PD submount 122 laser submount 123 monitor photodiode submount 124 cap 126 glass window 133 ferrule holder 134 bend limiter 36 ferrule

Claims (11)

[Claims] 1. An optical transmitting and receiving module for transmitting and receiving alternately by dividing time by using light of one wavelength λ for transmission and reception, and transmitting signal light from the outside or transmitting the signal light to the outside. A transmission medium consisting of an optical fiber or an optical waveguide to be transmitted, and an electrode disposed on the axis of the transmission medium, having electrodes on the front and back surfaces, having a built-in lens, having a thin light receiving layer, and absorbing a part of the incident light of wavelength λ. A light-receiving element that transmits the rest, and a light-emitting element that is disposed on the axis of the transmission medium behind the light-receiving element and generates light having a wavelength of λ, and transmission light from the light-emitting element enters the light-receiving element and is partially absorbed. An optical transmission / reception module, wherein the remaining light passes through a light receiving element and is condensed by a built-in lens to enter a transmission medium. 2. The optical transceiver module according to claim 1, comprising an optical fiber, a light receiving element with a lens, and a light emitting element. 3. The optical transceiver module according to claim 1, comprising an optical waveguide, a light receiving element with a lens, and a light emitting element. 4. The optical transmitting / receiving module according to claim 1, wherein a monitoring light receiving element is arranged behind the light emitting element. 5. A light-emitting element comprising InGaAsP.
A semiconductor laser of 3 μm or 1.5 μm band, and the light receiving element with a lens is made of InGaAs or InGaAsP.
The optical transceiver module according to any one of claims 1 to 4, wherein the optical transceiver module is a PIN photodiode composed of a series. 6. The optical transceiver module according to claim 5, wherein the thickness of the light receiving layer of InGaAs (λg = 1.67 μm) is about 0.7 μm. 7. The optical transceiver module according to claim 5, wherein the thickness of the light receiving layer of InGaAsP (λg = 1.4 μm) is about 1.0 μm. 8. The method according to claim 1, wherein the coupling system between the optical fiber, the light receiving element and the light emitting element is a pigtail type fixing the optical fiber to the optical element. Optical transceiver module. 9. The optical transmission / reception according to claim 1, wherein the coupling system between the optical fiber, the light receiving element and the light emitting element is a receptacle type in which the optical fiber can be attached to and detached from these elements. module. 10. The light receiving element for reception is used for monitoring the light quantity of the light emitting element at the time of transmission, so that the light receiving element for reception also serves as the light receiving element for monitoring. 10. The optical transceiver module according to any one of 5 to 9. 11. The optical transceiver module according to claim 1, wherein an amplifier for amplifying an electric signal of the receiving photodiode is housed in the same package as the light receiving element for light receiving.