JPS62266532A - Illuminating optical system - Google Patents

Illuminating optical system

Info

Publication number
JPS62266532A
JPS62266532A JP61109978A JP10997886A JPS62266532A JP S62266532 A JPS62266532 A JP S62266532A JP 61109978 A JP61109978 A JP 61109978A JP 10997886 A JP10997886 A JP 10997886A JP S62266532 A JPS62266532 A JP S62266532A
Authority
JP
Japan
Prior art keywords
light
optical system
lens
light source
illumination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61109978A
Other languages
Japanese (ja)
Other versions
JP2739712B2 (en
Inventor
Noriyuki Mitomi
三富 徳行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP61109978A priority Critical patent/JP2739712B2/en
Publication of JPS62266532A publication Critical patent/JPS62266532A/en
Application granted granted Critical
Publication of JP2739712B2 publication Critical patent/JP2739712B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Sources And Details Of Projection-Printing Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)

Abstract

PURPOSE:To effectively utilize a light flux from a light source, to improve light converging efficiency and to uniformly illuminate a surface to be illuminated, by arranging at a part of light converging system a lens which mainly generates an introvert comatic aberration. CONSTITUTION:A light converging optical system 4 converges a light source image formed in the vicinity of the 2nd focus into a position in the vicinity of a field lens 5 and makes the image incident upon the left end face of an optical integrator 6 for forming many light fluxes with uniform light distributing characteristics. A meniscus-shaped lens 4A for mainly generating an introvert comatic aberration is arranged on a part of the optical system 4 so that the center of curvature of the lens surface is positioned in the 2nd focus direction where the light source image based upon an elliptic reflector 2 is formed. Consequently, peripheral light fluxes among illuminating light fluxes can be prevented from vignetting and utilized as illuminating light and the light converging efficiency can be improved.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は電子回路等の微細パターンをクエ・・面上に投
影焼付けをし集積回路を製造する半導体焼付装置に好適
な照明光学系に関し、特に光源からの光束の有効利用を
図つ次照明光学系に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an illumination optical system suitable for a semiconductor printing apparatus for producing integrated circuits by projecting and printing fine patterns such as electronic circuits onto a surface. In particular, the present invention relates to an illumination optical system that aims to effectively utilize the luminous flux from a light source.

(従来の技術) 最近の半導体装造技術にit電子回路の、IfJ集積化
にftい・高密度の回路パターンが形成可能のリングラ
フィ技術が要求されている。
(Prior Art) Recent semiconductor manufacturing technology requires phosphorography technology that can form thin, high-density circuit patterns for IfJ integration of IT electronic circuits.

一般にマスク又はレチクル面上の回Mパターンtウェハ
面上に転写する場合、ウェハ1M上に転写される回路パ
ターンの解像線幅は光源の波長に比例してくる。この為
従来から波長200〜300 n7y1  の遠紫外(
ディープUV領域)の短い波長全発振する超高圧水銀灯
やキセノン水銀ランプ等が多く用いられている。
Generally, when a circuit pattern t on a mask or reticle surface is transferred onto a wafer surface, the resolution line width of the circuit pattern transferred onto the wafer 1M is proportional to the wavelength of the light source. For this reason, far ultraviolet light (with a wavelength of 200 to 300 n7y1) has traditionally been
Ultra-high pressure mercury lamps, xenon mercury lamps, etc. that oscillate at short wavelengths (in the deep UV region) are often used.

又半導体製造におけるウェー・面上への焼付ケ露尤にお
いては集光効率の向上、焼付は面全面における均一!S
元そして物理光学的効果のjit制御のためにマスク面
への照明光束に一定の拡がり角を持たせることが要求さ
れる。この為、従来#i、V、+、輝度の光源を用い集
光光学系とウェー面との1iljにプライアイレンズと
呼ばれるレンズアレイやオプティカルファイバー末等か
ら成る所謂オプティカルインチグレータとコンデンサー
レンズ?用い均−照明及び光束の拡がり全所定量1’j
たせた照明光学系t−構成している。
In addition, when it comes to baking and exposing wafers and surfaces in semiconductor manufacturing, the light collection efficiency is improved and the baking is uniform over the entire surface! S
In order to control the original and physical optical effects, it is required that the illumination light beam onto the mask surface has a constant divergence angle. For this reason, conventionally, using a light source of #i, V, +, brightness, a so-called optical inch grater and a condenser lens consisting of a lens array called a prior eye lens, an optical fiber end, etc. are used to connect the condensing optical system and the wave surface. Use average - total predetermined amount of illumination and luminous flux spread 1'j
The illumination optical system consists of an integrated illumination optical system.

このうちマスクとウエハt−密7#若しくは数十ミクロ
ノ程度離して焼付けを行う所謂コンタクト/ りrl 
+シミティ露元法ではコンデンサーレンズに工9オプテ
イカルインテグレータのIj4t−無限通に形成するよ
うにしている。又ステッパー存のマスクのパターンtウ
ェー面上に投影光学系?用いて投影露光する所−グロジ
エクション露元法ではコンデンサーレンズによりオプテ
ィカルインチグレータの像全投影元学系の入射1はに形
成するようにしてFyr浦ケーラー照明系七bt :t
V、 している。
Among these, the so-called contact/rel where the mask and wafer are printed with a distance of about 7# or several tens of microns apart.
+ In the shimity exposure method, the condenser lens is formed to have an Ij4t-infinity connection with an optical integrator. Also, is there a projection optical system on the pattern T-way surface of the mask existing in the stepper? In the glossejection exposure method, a condenser lens is used to form the entire image of the optical inch grater at the incidence 1 of the projection system.
V. I'm doing it.

しかしながらこれらの照明光学系では構成している。X
元字慶木の有効径及び元学的諸収差等の、1?畳により
照明光束のうち周辺光束がクラして照明光として利用さ
れないものが多くあル集光効率を低下させ−この結果ス
ループツ)1低下させる原因となっていた。照明光学系
における集光効率の向上はg臓吸収レジストやCgL(
Contrast Enchancament Lag
er )等の使用により最近特に重要な課題となってい
るθ(発明が解決しようとする問題点) 本発明は光源からの光束の有効利用を図夛集光効率の向
上を図った、特に半導体焼付は装置に好適な照明光学系
の提供を目的とする。
However, these illumination optical systems are configured. X
1 of Genji Keiki's effective diameter and various elementary aberrations, etc.? Due to the tatami mats, the peripheral light flux of the illumination light flux is distorted, and much of it is not used as illumination light, which reduces the light collection efficiency (as a result, the throughput rate)1 decreases. Improving the light collection efficiency in the illumination optical system is achieved by using G-absorbing resist or CgL (
Contrast Enchancament Lag
The present invention aims to effectively utilize the luminous flux from the light source, which has recently become a particularly important issue due to the use of The purpose of printing is to provide an illumination optical system suitable for the device.

(問題点を解決するための手段) 欄内反射鏡の第1焦点近傍に光#全配置し、該光源から
の光束全集光光学系によりオプティカルインチグレータ
ーに導光し、該オプティカルインチグレーターから射出
し次光束全利用して被照射面?照射する照明光学系にお
いて、前記集光光学系の一部に王に内向性コマ収差を発
生させるレンズを配置し次ことである。
(Means for solving the problem) All light is placed near the first focal point of the transom reflector, and the light beam from the light source is guided to an optical inch grater by a total focusing optical system, and then exits from the optical inch grater. Is the irradiated surface using the entire luminous flux? In the illumination optical system that emits light, a lens that causes inward comatic aberration is disposed in a part of the condensing optical system.

この他本発明の特徴は実施例において記載されている。Other features of the invention are described in the Examples.

(実施例) 第1図は本発明全半導体製造法の1つであるコンタクト
/プロキクミテイ露光装置に適用し友ときの一実施例の
光学系の概略図である。
(Embodiment) FIG. 1 is a schematic diagram of an optical system of an embodiment applied to a contact/pro-kikumitei exposure apparatus, which is one of the all-semiconductor manufacturing methods of the present invention.

同図において1は光源で例えば超高圧水銀灯から成って
いる。2は欄内反射鋭で第1焦点近傍に2源lが配置さ
れておシ1光源lからの光束を@円反射鏡2の第2焦点
近傍に配置したフィールドレンズ3の近傍に集光してい
る。4は集光光学系であり第2焦点近傍に形成されてい
るi#9 t−フィールドレンズ5の近傍に集光し1配
元特性が均一な多数の光束を形成する為のオプティカル
・インチグレーター6の左端面に入射させている。7は
オプティカル・インチグレーター6により形成された多
数光束を用いて被lflR4mB’に照明する為のコリ
メーターレンズである。
In the figure, reference numeral 1 denotes a light source, for example, an ultra-high pressure mercury lamp. Reference numeral 2 is an in-column reflector with two sources 1 placed near the first focal point, and the light beam from the 1 light source 1 is condensed near the field lens 3 placed near the second focal point of the circular reflector 2. ing. 4 is a condensing optical system, and is an optical inching grater for condensing light near the i#9 T-field lens 5 formed near the second focal point and forming a large number of light beams with uniform one-element characteristics. The light is incident on the left end face of 6. Reference numeral 7 denotes a collimator lens for illuminating the target lflR4mB' using the multiple light beams formed by the optical inching grater 6.

本実施例でd集光光学系4の一部に王に内向性コマ収差
を発生させるメニスカス形状のレンズ4Aを、特に欄内
反射鏡2による光源像の形成されている第2焦点方向に
レンズ面の自車中心が位置するようにしている。これK
よシ照明光束のうち周辺光束のケラレを防止し照明光と
して利用出来るようにしている。
In this embodiment, a meniscus-shaped lens 4A that causes inward comatic aberration is installed in a part of the d condensing optical system 4, especially in the direction of the second focal point where the light source image is formed by the column reflector 2. The center of the vehicle is positioned on the surface. This is K
It prevents vignetting of the peripheral luminous flux of the illumination luminous flux so that it can be used as illumination light.

fir、 2J!;Qけこのときの集光光学系4の横収
差図であυ1同図囚は光軸上、同図@は最軸外の光束に
おける収差図である。
fir, 2J! ;Q is a transverse aberration diagram of the condensing optical system 4 at this time.

第3図は各々集光光学系4の最適像面でのスポットダイ
ヤグラムであり、同図囚は光軸上1同図■は最軸外にお
ける光束を示す。
FIG. 3 is a spot diagram at the optimum image plane of the condensing optical system 4, where the figure shows the light flux on the optical axis, and the figure 3 shows the light flux at the farthest off-axis.

第4図は欄内反射鏡の第2焦点而での光源像の強vW分
布の説明図である。同図に示すように光源像の強度分布
は近似的にガウス分布となっている。
FIG. 4 is an explanatory diagram of the strong vW distribution of the light source image at the second focal point of the column reflecting mirror. As shown in the figure, the intensity distribution of the light source image is approximately a Gaussian distribution.

一般にこのときの広かつt光束の全てを利用することが
出来れば好ましい。
Generally, it is preferable if all of the wide and t luminous flux at this time can be utilized.

しかしながら実際には主に周辺光束が各光学要素の有効
径により制限されたり・又光学系の諸収差等の影響によ
りケラしてしまう。
However, in reality, the peripheral light beam is mainly limited by the effective diameter of each optical element, and is vignetted due to the influence of various aberrations of the optical system.

即ち第4図において実際の照明光束として使用されるの
は同図の斜線で示した範囲Pの部分となり範囲Qの部分
は照明光学系によシケラレでしまうので被照射面には入
射しない。そこで本実施例ではこの範囲Q12)部分が
範囲Pに含まれるように集光光学系の一部のレンズのレ
ンズ形状1特足しS第3図(5)に示すように内向性コ
マ収差全発生させることにより達成している。
That is, in FIG. 4, the part used as the actual illumination light beam is the area P indicated by diagonal lines in the figure, and the part Q is shredded by the illumination optical system and does not enter the illuminated surface. Therefore, in this embodiment, the lens shape 1 of some lenses of the condensing optical system is added so that this range Q12) is included in the range P, and the inward coma aberration is completely generated as shown in FIG. 3 (5). This is achieved by making

これにより光源の光l1kt−増大させることなく被照
射面への入射光tt増大させて集光効率の同上を図って
いる。
As a result, the incident light tt on the irradiated surface is increased without increasing the light l1kt of the light source, thereby increasing the light collection efficiency.

面木実施例において照明光束の周辺光束の有効利用を図
る為に集光光学系において内向性コマ収差を発生させる
レンズとしてはメニスカス形状に限らず前後の光学系を
制御すればどのようなレンズ形状のものであっても可能
である。
In the face tree embodiment, in order to effectively utilize the peripheral light flux of the illumination light flux, the lens that generates inward coma aberration in the condensing optical system is not limited to a meniscus shape, but any lens shape can be used as long as the front and rear optical systems are controlled. It is possible even if the

(発明の効果) 本発明によれば光源からの光束の有効利用を図シS集光
効率を向上させると共に被照射面の均一照明が可能な半
導体露光装置に好適な照明光学系t−達成することがで
きる。
(Effects of the Invention) According to the present invention, an illumination optical system suitable for a semiconductor exposure apparatus capable of effectively utilizing the luminous flux from the light source, improving the light collection efficiency, and uniformly illuminating the irradiated surface is achieved. be able to.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の光学系の概略図1第2図、
第3図は各々本発明に係る集光光学系の慣収庄図とスポ
ットダイヤグラムの説明図1第4図は本発明に係る川内
反射鏡の第2焦点面での光源像の強度分布の説明図であ
る。 図中1は光源、2は川内反射鏡、3.5はフィールドレ
ンズ、4は集光光学系、6はオプティカルインチグレー
ター、7けコリメーターレンズ、8は被照射面である。
FIG. 1 is a schematic diagram of an optical system according to an embodiment of the present invention.
FIG. 3 is an explanatory diagram of a convergence diagram and a spot diagram of the condensing optical system according to the present invention. FIG. 4 is an explanatory diagram of the intensity distribution of the light source image at the second focal plane of the Kawauchi reflector according to the present invention. It is a diagram. In the figure, 1 is a light source, 2 is a Kawauchi reflector, 3.5 is a field lens, 4 is a condensing optical system, 6 is an optical inch grater, 7 is a collimator lens, and 8 is an irradiated surface.

Claims (2)

【特許請求の範囲】[Claims] (1)楕円反射鏡の第1焦点近傍に光源を配置し、該光
源からの光束を集光光学系によりオプティカルインテグ
レーターに導光し、該オプテイカルインテグレーターか
ら射出した光束を利用して被照射面を照射する照明光学
系において、前記集光光学系の一部に主に内向性コマ収
差を発生させるレンズを配置したことを特徴とする照明
光学系。
(1) A light source is placed near the first focal point of the elliptical reflector, the light flux from the light source is guided to an optical integrator by a condensing optical system, and the light flux emitted from the optical integrator is used to illuminate the illuminated surface. 1. An illumination optical system for irradiating an object, characterized in that a lens that mainly generates inward comatic aberration is disposed in a part of the condensing optical system.
(2)前記レンズメニスカス形状を成し、前記楕円反射
鏡による光源像の形成されている該楕円反射鏡の第2焦
点方向にレンズ面の曲率中心を向けて配置したことを特
徴とする特許請求の範囲第1項記載の照明光学系。
(2) A patent claim characterized in that the lens has a meniscus shape and is arranged with the center of curvature of the lens surface facing the second focal direction of the elliptical reflector where a light source image is formed by the ellipse reflector. The illumination optical system according to item 1.
JP61109978A 1986-05-14 1986-05-14 Illumination optical system, printing apparatus and circuit manufacturing method Expired - Fee Related JP2739712B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61109978A JP2739712B2 (en) 1986-05-14 1986-05-14 Illumination optical system, printing apparatus and circuit manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61109978A JP2739712B2 (en) 1986-05-14 1986-05-14 Illumination optical system, printing apparatus and circuit manufacturing method

Publications (2)

Publication Number Publication Date
JPS62266532A true JPS62266532A (en) 1987-11-19
JP2739712B2 JP2739712B2 (en) 1998-04-15

Family

ID=14523975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61109978A Expired - Fee Related JP2739712B2 (en) 1986-05-14 1986-05-14 Illumination optical system, printing apparatus and circuit manufacturing method

Country Status (1)

Country Link
JP (1) JP2739712B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0933951A1 (en) * 1998-01-28 1999-08-04 NEC Corporation Relay lens for image projector

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60218635A (en) * 1984-04-13 1985-11-01 Canon Inc Lighting device
JPS62178207A (en) * 1986-01-31 1987-08-05 Dainippon Screen Mfg Co Ltd Optical system for illumination

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60218635A (en) * 1984-04-13 1985-11-01 Canon Inc Lighting device
JPS62178207A (en) * 1986-01-31 1987-08-05 Dainippon Screen Mfg Co Ltd Optical system for illumination

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0933951A1 (en) * 1998-01-28 1999-08-04 NEC Corporation Relay lens for image projector
US6149276A (en) * 1998-01-28 2000-11-21 Nec Corporation Image projector

Also Published As

Publication number Publication date
JP2739712B2 (en) 1998-04-15

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