JPS62265787A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS62265787A JPS62265787A JP10865286A JP10865286A JPS62265787A JP S62265787 A JPS62265787 A JP S62265787A JP 10865286 A JP10865286 A JP 10865286A JP 10865286 A JP10865286 A JP 10865286A JP S62265787 A JPS62265787 A JP S62265787A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- type
- layer
- groove
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 7
- 239000002019 doping agent Substances 0.000 abstract description 4
- 208000031481 Pathologic Constriction Diseases 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 30
- 238000005253 cladding Methods 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 235000000722 Celosia argentea Nutrition 0.000 description 1
- 240000008365 Celosia argentea Species 0.000 description 1
- 241001669573 Galeorhinus galeus Species 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
- H01S5/3081—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping using amphoteric doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
発明の要約
ｎ−１〜５とする（ｎｉｌ）Ａ面を斜面とする溝加工ま
たは段差加工を施した（１００）面方位ｐ型ＧａＡｓ基
１上に、ＡｆＧａＡｓ ： Ｓ ｉ層、ＡｆＧａＡｓ
： Ｂｅクラッド層、Ａｊ！ＧａＡｓ活性層、Ａｊ：Ｇ
ａＡｓ ： Ｓｎクラッド層を成長させる。Ｓｌは（１
００）面上ではｎ型、 （ｎｉｌ）面上ではｐ型とし
て働くためＡλＧａＡｓ ： Ｓ ｉ層は溝部分でのみ
ｐ型となり、ここに電流路かできる。DETAILED DESCRIPTION OF THE INVENTION Summary of the Invention AfGaAs: S i-layer, AfGaAs
: Be cladding layer, Aj! GaAs active layer, Aj:G
aAs: Grow Sn cladding layer. Sl is (1
Since it acts as an n-type on the 00) plane and a p-type on the (nil) plane, the AλGaAs:Si layer becomes p-type only in the groove portion, and a current path is created here.
このような内部電流狭搾型半導体レーザを１回の分子線
エピタキシャル成長により作製することかできる。Such an internal current narrowing type semiconductor laser can be manufactured by one-time molecular beam epitaxial growth.
発明の背景 この発明は、半導体レーザの製造方法に関し。Background of the invention The present invention relates to a method for manufacturing a semiconductor laser.
とくに、たとえば分子線エピタキシャル成長法を用いて
内部電流狭搾部をもつ半導体レーザを装造する方法に関
する。In particular, the present invention relates to a method of fabricating a semiconductor laser having an internal current constriction section using, for example, molecular beam epitaxial growth.
従来の内部電流狭搾機（１４を有するＡ、ｇＧａＡｓ／
Ｇａ Ａ ｓ半導体レーザは、まず１回口の結晶成長
で基板上にそれとは逆の導電型の層を成長させ、その一
部をストライブ状にエツチングによって除去し、ここに
電流経路を設けることができるようにし、２回目の結晶
成長においてそのＪ！成板上二重異種接合構造を成長さ
せていた。Conventional internal current narrower (with 14 A, gGaAs/
GaAs semiconductor lasers are made by first growing a layer of the opposite conductivity type on a substrate in a single crystal growth process, and then removing a portion of it by etching in a stripe pattern to create a current path there. , and in the second crystal growth, that J! A double heterojunction structure was grown on the plate.
しかしながらこのような従来の半導体レーザの製造方法
においては、２回の結晶成長工程を必要とする。２０目
の成長時に基板かｌ”Ｉ温にさらされるため逆バイアス
電流阻止層となるべき１回口と２回目の成長の界面に欠
陥を導入しやすいという問題点がある。However, such a conventional semiconductor laser manufacturing method requires two crystal growth steps. Since the substrate is exposed to l''I temperature during the 20th growth, there is a problem that defects are likely to be introduced at the interface between the first growth and the second growth, which should serve as a reverse bias current blocking layer.
発明の概要
この発明は、結晶成長工程を２回に分ける必要のない半
導体レーザ、とくに内部電流挟片型の半導体レーザを製
造する方法を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor laser, particularly an internal current sandwich type semiconductor laser, which does not require dividing the crystal growth process into two steps.
この発明による半導体レーザの製造方法は。A method of manufacturing a semiconductor laser according to the present invention is as follows.
（＋００）面方位のｐ型ＧａＡｓＪＪ板上に（ｎｉｌ）
（ｎ−１〜５）Ａ面を露出させるストライブ状の溝また
は傾斜加工を施し、その上に分子線エピタキシャル成長
法によりＳｔドープのＧａＡｓまたはＡｊ２ＧａＡｓを
成長させることを特徴とする。(nil) on a p-type GaAs JJ plate with (+00) plane orientation.
(n-1 to 5) It is characterized in that a striped groove or slope process is performed to expose the A-plane, and St-doped GaAs or Aj2GaAs is grown thereon by molecular beam epitaxial growth.
これによって、Ａ面部のみがｐ型、他の平坦部はｎ型と
なり、１回の結晶成長で内部電流挟片型半導体レーザを
つくることができ、上記問題点が解決される。As a result, only the A-plane portion becomes p-type and the other flat portions become n-type, making it possible to produce an internal current sandwich type semiconductor laser with one crystal growth, thus solving the above-mentioned problem.
実施例の説明
第１図は、この発明の製造方法によって製造された半導
体レーザの概念図を共振器に垂直な断面として示すもの
である。DESCRIPTION OF EMBODIMENTS FIG. 1 shows a conceptual diagram of a semiconductor laser manufactured by the manufacturing method of the present invention as a cross section perpendicular to a resonator.
ここで、１はｎ側電極、２はｎ −ＧａＡｓコンタク
ト層、３はスズ（Ｓｎ）をドーパントとしたｎ−ＡＪＧ
ａＡｓクラッド層、４は活Ｘ Ｉ−ｘ
外層、５はベリリウム（Ｂｅ）をドーパントとしたｐ−
Ａｊ！ Ｇａ Ａｓクラッド層、６はシリｔ−ｙ
コン（Ｓｉ） ドープのＡｊ！ Ｇａ Ａｓ電流
秋ｚ ｌ−ｚ
搾層、７は（１００）面方位ｐ型ＧａＡｓ基板、８はｐ
側電極である。Here, 1 is an n-side electrode, 2 is an n-GaAs contact layer, and 3 is an n-AJG doped with tin (Sn).
aAs cladding layer, 4 is active X I-x outer layer, 5 is p- with beryllium (Be) dopant.
Aj! GaAs cladding layer, 6 is Si-doped Aj! 7 is a (100) plane orientation p-type GaAs substrate, 8 is a p-type GaAs substrate.
This is the side electrode.
この半導体レーザは次のようにして作製される。まず（
１００）面方位のｐ型ＧａＡｓ、、Ｍ板上７に（０１１
）方向にストライブ状の窓をあけたエツチング・マスク
を設け、硫酸−過酸化水索一水等を用いたウェット・ケ
ミカル・エツチングやドライ・エツチングによりＳ 、
Ｓ で示すような（ｎｉｌ）ｎ−１〜５１１ｊが露出す
るような溝加工を施す。This semiconductor laser is manufactured as follows. first(
100) p-type GaAs with plane orientation (011
), and wet chemical etching using sulfuric acid-peroxide solution or dry etching is performed to remove S.
Groove processing is performed so that (nil)n-1 to 511j, as shown by S, are exposed.
エツチング・マスクを除去したのち次に１分子線エピタ
キシャル成長（ＭＢＥ）法により、ＳｉドープＡｊ！Ｇ
ａＡｓ層６．ＢｅドープＡＪＧａＡｓ層５．Ａｊ！Ｇａ
Ａｓ系活性層４．ＳｎドープＡｌＧａＡｓ層３およびｎ
型ＧａＡｓ層２を連続的に成長させる。最後に、電極１
．８を設ける。After removing the etching mask, Si-doped Aj! G
aAs layer6. Be-doped AJGaAs layer5. Aj! Ga
As-based active layer 4. Sn-doped AlGaAs layer 3 and n
A type GaAs layer 2 is grown continuously. Finally, electrode 1
．． 8 will be provided.
電流挟片層６の成長時にＳｉをドーピング祠として用い
ると、良く知られているようにＳｔは（１００）面上で
はｎ型、 （ｎｉｌ）面上ではｐ型として働くため、
この層５は、エツチングによって形成された溝の内部で
はｐ型、構外の平坦部ではｎ型となる。その結果平坦部
では層６と５の界面が逆バイアス電流阻止層となり、溝
の内部のみに電流が流れる（ｐ型部を斜線で示す、領域
Ｒ）。When Si is used as a doping source during the growth of the current sandwich layer 6, as is well known, St acts as an n-type on the (100) plane and a p-type on the (nil) plane.
This layer 5 becomes p-type inside the groove formed by etching, and becomes n-type in the flat area outside the structure. As a result, in the flat part, the interface between layers 6 and 5 becomes a reverse bias current blocking layer, and current flows only inside the groove (region R, where the p-type part is indicated by diagonal lines).
ｎ型クラッド層３では逆にこの導電性の反転効果を避け
るｔ：めｎ型ドーパントとしてたとえばＳｎ等を用いる
。In the n-type cladding layer 3, on the other hand, Sn or the like is used as an n-type dopant to avoid this conductivity inversion effect.
以上の構成において、ｐ（ｔ１１ｌ電極８からｎ側電極
１に向って電流を流すと、この電流は上述の溝部Ｒを通
って活性層４の中央部へ効率よく集中し。In the above configuration, when a current flows from the p(t11l electrode 8 to the n-side electrode 1), this current passes through the groove R described above and is efficiently concentrated in the center of the active layer 4.
内部電流挟片型半導体レーザとして動作する。Operates as an internal current sandwich type semiconductor laser.
第２図は、エツチングによって溝加工ではなく斜面加工
を施す方法によって製造された半導体レーザを示してい
る。いわゆるテラス型半導体レーザである。第１図に示
すものと同一物には同一符号が付けられている。FIG. 2 shows a semiconductor laser manufactured by etching to form a slope instead of a groove. This is a so-called terrace type semiconductor laser. Components that are the same as those shown in FIG. 1 are given the same reference numerals.
ここでは（１００）面方位ｐ形ＧａＡｓ基板７上に（ｎ
１１）Ａ面（ｎ−１〜５）を斜面とするテラス状のエツ
チング加工を施し、その後その上に各層６．５，４，３
．２を成長させている。Here, (n
11) Perform a terrace-like etching process with the A side (n-1 to 5) as the slope, and then apply each layer 6.5, 4, 3 on top of it.
．． 2 is growing.
以上のようにしてこの発明によると、ドーパントを適宜
選択することにより、１０の結晶成長で内部電流挟片型
半導体レーザを作製することかできる。As described above, according to the present invention, by appropriately selecting a dopant, an internal current sandwich type semiconductor laser can be manufactured by growing 10 crystals.
」二足では活性層について特記しなかったか、活性層は
、単なるＡｊ７ Ｇａ Ａｓ単一層でも。``Nippo didn't mention anything about the active layer, and the active layer was just a single layer of Aj7 GaAs.
ｖ Ｌ−ｗ
多重量子井戸構造でも、いわゆるＧ ＲＩ Ｎ−５ＣＨ
（Ｇｒａｄｅｄ Ｉｎｄｅｘ ５ｅｐａｒａｔｅ Ｃｏ
ｎｒｉｎｃｍｃｎｔｌｆｅｔｅｒｏｓｔｒｕｃｔｕｒｅ
）構造でもよい。v L-w Even in a multiple quantum well structure, the so-called G RI N-5CH
(Graded Index 5 separate Co.
nrincmcntlfeterostructure
) structure.
第１図はこの発明による製造方法によって作製された半
導体レーザを示す断面図であり、第２図はこ“の発明に
よる他の製造方法によって作製された半導体レーザを示
す断面図である。
６・・・Ｓ１ド一プ電流狭搾層。
７・・・ｐ型ＧａＡｓ基板。
以 １゜
特許出願人 立石電機株式会社
代 理 人 弁理士 牛久部用
（外１名）
１ 、ｎザ１１ｔ極
２：ｎ”−ＧａＡｓコ／ｙクト９
３：ｎ−ＡＩＧｏＡｓ （スズトープ）クラット層４
活性層
５＋Ｉ）−Ａｔ！ＧａＡｓ （へリリウムトーブ）６
、／ソコ／トープＡ／ＧａＡｓ層
７、ｐ型ＧａＡｓ基板
Ｓ＋ 、 Ｓ２ ： （ｎｉｌ） Ａ面Ｒａｐ型部
第１図
第２図
−１丁、続辛甫１Ｅ書（自発）
昭和６１年１０月２Ｓ口
特許′［庁長官黒１）明雄殿
ｌ 事件の表示
昭和６１年特許願第１０８６５２号
２ 発明の名称
半導体レーザの製造方法
３ 補止をする者
′１を件との関係 特許出願人
住所 京都市右京区？Ｅ園土堂町１０番地名称 （
２９４）立石電機株式会社
４ 代理人
住所 〒１０５東京都港区西新橋１丁口１２番８号西
新橋中ビル５階
電話（０３） ５０８−０２９５
補正の内容
（１）明細書の特許請求の範囲の欄の記載を別紙の通り
補正する。
（２）同書第３頁第８行から第１３行の「この発明によ
る・・・特徴とする。」を次のように訂正する。
「 この発明による半導体レーザの製造方法は。
（１００）面方位のｐ型Ｇ ａ Ａ ｓ 、！！成板上
たはｐ型ＣａＡｓ層を表面層とするＧａＡｓ基板上に（
ｎｉｌ）（ｎ −１〜５）Ａ面を露出させるストライブ
状の溝または傾斜加工を施し、その上に分子線エピタキ
シャル成長法によりＳｉドープのＧａＡｓまたはＡｆＧ
ａＡｓを成長させ、かつその上にｎ型クラッド層をスズ
トープＡｊ２ＧａＡｓとする二組異種接合を設けたこと
を特徴とする。」（３）回書第５頁第工２行から第１３
行の「たとえばＳｎ等を用いる。」を、ｒＳｎを用いる
。」と訂正する。
以 −」ニ
特許請求の範囲
（＋００）面ツノ°位のｐ型ＧａＡｓ基板上またはｐ型
ＧａＡｓ層を表面層とするＧａＡｓ基板上に。
ｎを１〜５とする（ｎ１１） Ａ面を露出させる溝加工
または段刀加上を施し、その上にＳｉドープＡβ流狭挟
片をもつ半導体レーザの製造方法。FIG. 1 is a cross-sectional view showing a semiconductor laser manufactured by a manufacturing method according to the present invention, and FIG. 2 is a cross-sectional view showing a semiconductor laser manufactured by another manufacturing method according to this invention. 6. ... S1 doped current constriction layer. 7... P-type GaAs substrate. 1゜ Patent applicant: Tateishi Electric Co., Ltd. Agent: Patent attorney: For Ushikube (1 other person) 1, n the 11t pole 2 :n”-GaAs Co/y-Cot 9 3:n-AIGoAs (tin tope) crack layer 4
Active layer 5+I)-At! GaAs (helylium torch) 6
, /Soko/Tope A/GaAs layer 7, p-type GaAs substrate S+, S2: (nil) A-side Rap type part Figure 1 Figure 2-1, Zoku Shinbo 1E book (self-proposal) October 1985 2S Mouth Patent' [Office Commissioner Black 1] Mr. Akio l Indication of the case 1986 Patent Application No. 108652 2 Name of the invention Method for manufacturing a semiconductor laser 3 Relationship with the case regarding the person making the supplement' 1 Address of the patent applicant Ukyo Ward, Kyoto City? E Endodocho 10 name (
294) Tateishi Electric Co., Ltd. 4 Agent address: 5th floor, Nishi-Shinbashi Naka Building, 1-12-8 Nishi-Shinbashi 1-chome, Minato-ku, Tokyo 105 Telephone: (03) 508-0295 Contents of amendment (1) Regarding the patent claims in the specification The description in the range column will be corrected as shown in the attached sheet. (2) The phrase "This invention is characterized by..." in lines 8 to 13 of page 3 of the same book is corrected as follows. "The method for manufacturing a semiconductor laser according to the present invention is to produce a p-type GaAs with a (100) plane orientation on a plate or a GaAs substrate having a p-type CaAs layer as a surface layer (
nil) (n -1 to 5) A striped groove or inclined processing is performed to expose the A-plane, and Si-doped GaAs or AfG is formed thereon by molecular beam epitaxial growth.
It is characterized by growing aAs and providing two sets of heterojunctions on which the n-type cladding layer is tin-topped Aj2GaAs. (3) Circular, page 5, lines 2 to 13
In the line "For example, use Sn, etc.", rSn is used. ” he corrected. Claims 2. On a p-type GaAs substrate with a (+00) plane angle or on a GaAs substrate having a p-type GaAs layer as a surface layer. n is 1 to 5 (n11) A method for manufacturing a semiconductor laser which is subjected to groove machining or step machining to expose the A-plane and has a Si-doped Aβ flow narrowing piece thereon.
Claims (1)
とする（ｎ１１）Ａ面を露出させる溝加工または段差加
工を施し、その上にＳｉドープＡｌＧａＡｓまたはＧａ
Ａｓを成長させたことを特徴とする内部電流狭搾部をも
つ半導体レーザの製造方法。On a p-type GaAs substrate with (100) plane orientation, n is 1 to 5.
(n11) Perform groove processing or step processing to expose the A side, and then Si-doped AlGaAs or Ga
A method for manufacturing a semiconductor laser having an internal current constriction part characterized by growing As.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61108652A JPH07112092B2 (en) | 1986-05-14 | 1986-05-14 | Semiconductor laser and manufacturing method thereof |
| US07/048,616 US4839307A (en) | 1986-05-14 | 1987-05-11 | Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement |
| US07/297,025 US5010556A (en) | 1986-05-14 | 1989-01-13 | A stripe-shaped heterojunction laser with unique current confinement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61108652A JPH07112092B2 (en) | 1986-05-14 | 1986-05-14 | Semiconductor laser and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62265787A true JPS62265787A (en) | 1987-11-18 |
| JPH07112092B2 JPH07112092B2 (en) | 1995-11-29 |
Family
ID=14490238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61108652A Expired - Lifetime JPH07112092B2 (en) | 1986-05-14 | 1986-05-14 | Semiconductor laser and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07112092B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01239980A (en) * | 1988-03-22 | 1989-09-25 | Canon Inc | Semiconductor laser device |
| JPH0215689A (en) * | 1988-07-01 | 1990-01-19 | Sharp Corp | Manufacture of semiconductor laser element |
| JPH0279487A (en) * | 1988-09-14 | 1990-03-20 | Sharp Corp | Semiconductor laser element |
| JP2001244572A (en) * | 2000-03-02 | 2001-09-07 | Sony Corp | Method of manufacturing semiconductor laser light emitting device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5832482A (en) * | 1981-08-20 | 1983-02-25 | Nec Corp | Semiconductor laser |
| JPS6175586A (en) * | 1984-09-20 | 1986-04-17 | Rohm Co Ltd | Laser diode and manufacture thereof |
-
1986
- 1986-05-14 JP JP61108652A patent/JPH07112092B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5832482A (en) * | 1981-08-20 | 1983-02-25 | Nec Corp | Semiconductor laser |
| JPS6175586A (en) * | 1984-09-20 | 1986-04-17 | Rohm Co Ltd | Laser diode and manufacture thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01239980A (en) * | 1988-03-22 | 1989-09-25 | Canon Inc | Semiconductor laser device |
| US5115443A (en) * | 1988-03-22 | 1992-05-19 | Canon Kabushiki Kaisha | Semiconductor laser apparatus |
| WO1993013578A1 (en) * | 1988-03-22 | 1993-07-08 | Seiichi Miyazawa | Semiconductor laser device |
| JPH0215689A (en) * | 1988-07-01 | 1990-01-19 | Sharp Corp | Manufacture of semiconductor laser element |
| JPH0279487A (en) * | 1988-09-14 | 1990-03-20 | Sharp Corp | Semiconductor laser element |
| JP2001244572A (en) * | 2000-03-02 | 2001-09-07 | Sony Corp | Method of manufacturing semiconductor laser light emitting device |
| JP4696332B2 (en) * | 2000-03-02 | 2011-06-08 | ソニー株式会社 | Manufacturing method of semiconductor laser light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07112092B2 (en) | 1995-11-29 |
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