JPS63220587A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS63220587A
JPS63220587A JP5296487A JP5296487A JPS63220587A JP S63220587 A JPS63220587 A JP S63220587A JP 5296487 A JP5296487 A JP 5296487A JP 5296487 A JP5296487 A JP 5296487A JP S63220587 A JPS63220587 A JP S63220587A
Authority
JP
Japan
Prior art keywords
type
layer
doped
gaas
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5296487A
Other languages
Japanese (ja)
Inventor
Hiroshi Imamoto
浩史 今本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP5296487A priority Critical patent/JPS63220587A/en
Priority to US07/048,616 priority patent/US4839307A/en
Publication of JPS63220587A publication Critical patent/JPS63220587A/en
Priority to US07/297,025 priority patent/US5010556A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
    • H01S5/3081—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping using amphoteric doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a semiconductor laser without dividing a crystalgrowth process into two, by a method wherein the (n 11) A plane is exposed, Si-doped AlSGaAs on GaAs is grown on it, a double heterojunction whose n-type clad layer is composed of Si-doped AlSGaAs is installed and, futhermore, an n-type cap layer is installed. CONSTITUTION:The (n 11) (where n =1-3) A plane is exposed by making a stripe-shaped groove or a slope on a p-type GaAs substrate 7 of the orientation of plane (100) or on a GaAs substrate whose surface layer is composed of a p-type GaAs layer; Si-doped GaAs or AlGaAs 6 is grown on the assembly by using a molecular beam epitaxial growth method; a double heterojunction structure whose n-type clad layer is composed of an Si-doped AlGaAs layer 3 and whose cap layer is composed of Sn-doped GaAs is installed on the assembly. By this setup, only the 1A plane becomes a p-type and the remaining flat part becomes an n-type; an internal electric-current constriction part is constituted at the groove or at the stepped central part; it is possible to manufacture a semiconductor laser of the internal electric-current constriction type with a single crystal-growth process.

Description

【発明の詳細な説明】 発明の要約 ｎ−１〜３とする（ｎｉｌ）Ａ面を斜面とする溝加工ま
たは段差加工を施した（１００）面方位ｐ型ＧａＡｓ基
板上に、Ａ、ｇＧａＡｓ　：Ｓｉ層。DETAILED DESCRIPTION OF THE INVENTION Summary of the Invention A, gGaAs is deposited on a (100) plane oriented p-type GaAs substrate which has been subjected to groove processing or step processing with the (nil) A plane as a slope, n-1 to n-3. Si layer.

Ａ、ｉ：ＧａＡｓ　：　Ｂｅクラッド層、Ａ、ｇＧａＡ
ｓ活性層、ＡｊｑＧａＡｓ　：　Ｓ　ｉクラッド層、Ｇ
ａＡｓ：Ｓｎキャップ層を成長さぜる。Ｓｉは（１００
）面上ではｎ型、　　（ｎｉｌ）面一にではｐ型として
働くので、Ａｊ７ＧａＡｓ　ｓ　Ｓ　ｉ層は斜面でのみ
ｐ型となり、溝部分または段差加工の中央部は平坦とな
るからｎ型となり、ここに電流路ができる。このような
内部電流狭搾型半導体レーザを１回の分子線エピタキシ
ャル成長により作製することができる。A, i: GaAs: Be cladding layer, A, gGaA
s active layer, AjqGaAs: Si cladding layer, G
Grow an aAs:Sn cap layer. Si is (100
) works as n-type on the (nil) plane, and as p-type on the (nil) plane, the Aj7GaAs s Si layer becomes p-type only on the slope, and becomes n-type because the groove part or the central part of the step processing is flat. A current path is created here. Such an internal current narrowing type semiconductor laser can be manufactured by one-time molecular beam epitaxial growth.

発明の背景 この発明は、半導体レーザの製造方法に関し。Background of the invention The present invention relates to a method for manufacturing a semiconductor laser.

とくに、たとえば分子線エピタキシャル成長法を用いて
内部電流狭搾部をもつ半導体レーザを製造する方法に関
する。In particular, the present invention relates to a method of manufacturing a semiconductor laser having an internal current constriction section using, for example, molecular beam epitaxial growth.

従来の内部電流狭搾機構を有するＡ、ＱＧａＡｓ／　Ｇ
　ａ　Ａ　ｓ半導体レーザはまず１回目の結晶成長で基
板」二にそれとは逆の導電型の層を成長させ。A, QGaAs/G with conventional internal current constriction mechanism
In an aAs semiconductor laser, a first crystal growth process is performed on the substrate, and then a layer of the opposite conductivity type is grown.

その一部をストライプ状にエツチングによって除去し、
ここに電流経路を設けることができるようにし、２回目
の結晶成長においてその基板上に２重異種接合構造を成
長させていた。A part of it is removed by etching in stripes,
A current path can be provided here, and a double heterojunction structure is grown on the substrate during the second crystal growth.

しかしながらこのような従来の半導体レーザの製造方法
においては、２回の結晶成長工程を必要とする。２回目
の成長時に基板が高温にさらされるため逆バイアス電流
阻止層となるべき１回目と２回目の成長の界面に欠陥を
導入しやすいという問題点がある。However, such a conventional semiconductor laser manufacturing method requires two crystal growth steps. Since the substrate is exposed to high temperature during the second growth, there is a problem in that defects are likely to be introduced at the interface between the first and second growth, which should serve as a reverse bias current blocking layer.

発明の概要 この発明は、結晶成長工程を２回に分ける必要のない半
導体レーザ、とくに内部電流狭搾型の半導体レーザを製
造する方法を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor laser, particularly an internal current constriction type semiconductor laser, which does not require dividing the crystal growth process into two steps.

この発明による半導体レーザの製造方法は。A method of manufacturing a semiconductor laser according to the present invention is as follows.

（１００）面方位のｐ型ＧａＡｓ基板上またはｐ型Ｇａ
Ａｓ層を表面層とするＧ　ａ　Ａ　ｓ基板上に（ｎｉｌ
）（ｎ−１〜３）Ａ面を露出させるストライブ状の溝ま
たは傾斜加工を施し、その」二に２分子線エピタキシャ
ル成長法によりＳｉドープのＧａＡｓまたはＡｊ！Ｇａ
Ａｓを成長させ、その上にｎ型クラット層をＳｉドープ
ＡｌＧａＡｓ層。(100) p-type GaAs substrate or p-type Ga
On a GaAs substrate with an As layer as a surface layer (nil
) (n-1 to 3) A striped groove or slope processing is performed to expose the A plane, and then Si-doped GaAs or Aj! Ga
As is grown, and an n-type crat layer is formed on top of the Si-doped AlGaAs layer.

キャップ層をＳｎドープＧａＡｓとする２重異種接合構
造を設けたことを特徴とする。It is characterized by providing a double heterojunction structure in which the cap layer is made of Sn-doped GaAs.

これによってＡ面部のみがｐ型、他の平坦部はｎ型とな
り、溝部または段差加工中央部に内部電流狭搾部ができ
、１回の結晶成長で内部電流狭搾型半導体レーザをつく
ることができ、ト記問題点が解決される。とくにｎ型ク
ラッド層においては中央部に狭い平坦な部分ができるの
でここが両側の斜面ｐ型部に挟まれたｎ型部となり、狭
い電子の電流狭搾部ができる。As a result, only the A-plane part becomes p-type, and the other flat part becomes n-type, and an internal current narrowing part is created in the groove or the center part of the step process, making it possible to create an internal current narrowing type semiconductor laser with one crystal growth. This will solve the problem mentioned above. In particular, in the n-type cladding layer, a narrow flat portion is formed in the center, which becomes an n-type portion sandwiched between the sloped p-type portions on both sides, creating a narrow electron current constriction portion.

実施例の説明 第１図は、この発明の製造方法によって製造された半導
体レーザの構造を共振方向に垂直な断面として示すもの
である。DESCRIPTION OF THE EMBODIMENTS FIG. 1 shows the structure of a semiconductor laser manufactured by the manufacturing method of the present invention as a cross section perpendicular to the resonance direction.

ここで、１はｎ側電極、２はスズ（Ｓ　ｎ）をドーパン
トしたｎ−ＡＪＧａＡｓコンタクｘ　　　１−ｘ ト層、３はシリコン（Ｓｉ）をドーパントとじたｎ−Ａ
ｌ２　ＧａＡｓクラッド層で、これは電ｘ　　　Ｌ−ｘ 子の注入方向からの電流狭搾層として働く。４は活性層
、５はベリリウム（Ｂｅ）をドーパントしたｐ−Ａｉ　
Ｇａ　　　Ａｓクラッド層、６はシリ１−ｙ フン（Ｓｉ）　　ドープのＡｌ２　　Ｇａ　　　Ａｓ電
流狭ｚ　　　Ｌ−ｚ 搾層、７は（ｉｏｏ）面方位のｐ型ＧａＡｓ基板、８は
ｎ側電極である。Here, 1 is an n-side electrode, 2 is an n-AJGaAs contact layer doped with tin (S n), and 3 is an n-A contact layer doped with silicon (Si).
l2 GaAs cladding layer, which acts as a current confinement layer from the injection direction of x L-x electrons. 4 is an active layer, 5 is p-Ai doped with beryllium (Be)
A GaAs cladding layer, 6 a Si-doped Al2GaAs current narrowing layer, 7 a p-type GaAs substrate with an (ioo) plane orientation, and 8 an n-side electrode.

この半導体レーザは次のようにして作製される。まず（
１００）面方位のｐ型ＧａＡｓ基板上７に（０１０）方
位にストライブ状の窓をあけたエツチング・マスクを設
け、リン酸−過酸化水素一水等を用いたウェット・ケミ
カル・エツチングやドライ・エツチングによりＳｌ、Ｓ
２で示すような（ｎｉｌ）ｎ＝１〜３Ａ面が露出するよ
うな溝加工を施す。This semiconductor laser is manufactured as follows. first(
100) An etching mask with striped windows in the (010) orientation is provided on a p-type GaAs substrate with a plane orientation of 7, and wet chemical etching using phosphoric acid-hydrogen peroxide, etc. or dry etching is performed.・Sl, S by etching
Groove processing is performed to expose the (nil)n=1 to 3A surface as shown in 2.

エツチング・マスクを除去したのち１分子線エピタキシ
ャル成長（ＭＢＥ）法により、ＳｉドープＡｊ！ＧａＡ
ｓ層６．ＢｅドープＡｊ！ＧａＡｓ層５、Ａｊ！ＧａＡ
ｓ系活性層４．ＳｉドープＡ（ＧａＡｓ層およびｎ型Ｇ
ａＡｓ層２を連続的に成長させる。最後に電極１，８を
設ける。After removing the etching mask, Si-doped Aj! GaA
s layer 6. Be dope Aj! GaAs layer 5, Aj! GaA
s-based active layer 4. Si-doped A (GaAs layer and n-type G
The aAs layer 2 is grown continuously. Finally, electrodes 1 and 8 are provided.

電流狭搾層６およびｎ型クラッド層３の成長時にＳｉを
ドーピング制として用いると、良く知られているように
Ｓｉは（１（１０）面上ではｎ型。When Si is used as a doping system during the growth of the current confinement layer 6 and the n-type cladding layer 3, as is well known, Si becomes n-type on the (1(10) plane).

（ｎ　１１）面上ではｐ型として働く。このため、電流
狭搾層６についていえば、エツチングによって形成され
た溝の内部ではほとんどの部分が斜面となっているので
ｐ型となり、溝外の平坦部ではｎ型となる。ｐ型部を斜
線で示す。ｎｕクラッド層３は層６上に形成された層５
．４１につくられるので、このクラッド層３における溝
部中央（Ｒで示す）では平坦性が増し、ここがｎ型とな
り、その両側の斜面部がｐ型となり（ハツチングで示す
）、さらにその両側の平坦部ではｎ型となる。It acts as p-type on the (n 11) plane. For this reason, regarding the current confinement layer 6, most of the inside of the groove formed by etching is sloped, so it becomes p-type, and the flat part outside the groove becomes n-type. The p-type part is indicated by diagonal lines. nu cladding layer 3 is layer 5 formed on layer 6
．． 41, the flatness increases at the center of the groove (indicated by R) in this cladding layer 3, which becomes n-type, and the slopes on both sides thereof become p-type (indicated by hatching), and the flatness on both sides increases. In this case, it becomes n-type.

したがって２層５と６との界面においては両側の平坦部
が正孔に対する逆バイアス電流阻止層となる。また２層
２と３との界面においては、中央の平坦部Ｒの両側の斜
面部が電子に対する逆バイアス電流阻止層となる。第１
図ではｐｎ逆バイアス接合面を太く示しである。Therefore, at the interface between the two layers 5 and 6, the flat portions on both sides serve as reverse bias current blocking layers for holes. Further, at the interface between the two layers 2 and 3, the sloped portions on both sides of the central flat portion R serve as reverse bias current blocking layers for electrons. 1st
In the figure, the pn reverse bias junction surface is shown in bold.

ｎ型コンタクト層２では、逆にこの導電性の反転効果を
避けるためｎ型ドーパントとしてＳｎを用いている。In the n-type contact layer 2, Sn is used as an n-type dopant to avoid this conductivity inversion effect.

以」二の構成において、ｎ側電極８からｎ側電極１に向
って電流（正孔）を流すと、電極８からの正孔は、実線
の矢印で示すように１層６の斜面部を通って活性層４の
中央部に向い、電極１からの電子は、破線の矢印で示す
ように１層３の中央の平旦１部Ｒのみを通って活性層４
の中央部に向って、正孔と再結合し、レーザ発振が起こ
る。このようにして、電流は活性層４の中央部へ効率よ
く集中し、内部電流狭搾型半導体レーザとして動作する
。In the second configuration below, when a current (holes) is passed from the n-side electrode 8 to the n-side electrode 1, the holes from the electrode 8 move along the slope of the first layer 6 as shown by the solid arrow. The electrons from the electrode 1 pass through only the center part R of the first layer 3 and reach the active layer 4, as shown by the dashed arrow.
towards the center of the hole, it recombines with the hole and laser oscillation occurs. In this way, the current is efficiently concentrated in the center of the active layer 4, and the semiconductor laser operates as an internal current constriction type semiconductor laser.

第２図から第４図は他の実施例を示している。2 to 4 show other embodiments.

第２図では、エツチングによって溝加工の底部を平坦に
残すことによって製造された半導体レーザを示し、第３
図は上に凸状にエツチングを行ない製造された半導体レ
ーザを、第４図は、凸部の頂部に（１００）の平坦な面
を残すように加工されることによって製造された半導体
レーザをそれぞれ示している。これらの図において第１
図に示すものと同一物には同一符号がつけられている。FIG. 2 shows a semiconductor laser manufactured by leaving the bottom of the grooved flat by etching, and the third
The figure shows a semiconductor laser manufactured by etching it into a convex shape, and Figure 4 shows a semiconductor laser manufactured by etching it so that a (100) flat surface is left on the top of the convex part. It shows. In these figures, the first
Components that are the same as those shown in the figures are given the same reference numerals.

たたし電極１，８の図示か省略されている。これらの実
施例では、　（１００）面方位ｐ型ＧａＡｓ基板７に（
ｎｉｌ）Ａ面（ｎ−１〜３）を斜面とするテラス状のエ
ツチング加工を施し、その後その」−に各層６．５，４
，３．２を成長させている。The drawing electrodes 1 and 8 are omitted. In these embodiments, the (100)-oriented p-type GaAs substrate 7 has (
nil) A terrace-like etching process is performed with the A side (n-1 to 3) as the slope, and then each layer 6.5, 4
, 3.2 is growing.

以上のようにしてこの発明によるとドーパントを適宜選
択することにより１回の結晶成長で内部電流狭搾型半導
体レーザを作製することができる。As described above, according to the present invention, by appropriately selecting a dopant, an internal current narrowing type semiconductor laser can be manufactured by one crystal growth.

上記実施例では活性層について特記しなかったが、活性
層は単なるＡ、ｇ　　Ｇａ　　　Ａｓ単一層でｗ　　　
１−ｗ も、多重量子井戸構造でも、いわゆるＧＲＩＮ−８ＣＩ
Ｉ−８Ｑｗ構造でもよい。In the above embodiments, no special mention was made of the active layer, but the active layer was simply a single layer of A, g Ga As.
1-w also has a multi-quantum well structure, so-called GRIN-8CI.
An I-8Qw structure may be used.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの発明による製造方法によって作製された半
導体レーザを示す断面図であり、第２図、第３図、第４
図はこの発明による他の製造方法によって作製された半
導体レーザを示す断面図である。 １・・・ｎ側電極。 ２−−−Ｓ　ｎ　ドープｎ−Ａｊ？　　Ｇａ、−ｘ　Ａ
ｓコンタクト層。 ３−・−Ｓ　ｉ　　ドープｎ−Ａ、ｊ：　　　Ｇａ１−
ｘ　Ａｓクラッド層。 ４・・・活性層。 ５−−−　Ｂ　ｅ　ドープｐ−ＡＡ　　　Ｇ　ａ　１−
ｙ　Ａ　ｓクラッド層。 ６−−−　Ｓ　ｉ　　ドープＡ　Ｊ　　　Ｇ　ａ　１−
ｚ　Ａ　ｓ電流狭搾層。 ７・・・ｐ型ＧａＡｓ基板。 ８・・・ｐ側電極。 以　　上 特許出願人　　立石電機株式会社 代　理　人　　弁理士　牛久　健司　（外１名）１：ｎ
側電極 ２：３ｎトープｎ−Ａｊ’ｘＧａ、−、Ａｓ：１７タク
ト層３：Ｓｒ　ドープｎ−Ａ／、Ｇａ、−、Ａｓクラツ
１ζ層４：ン舌性Ｒ号 ５：Ｂｅ　　ド゛−プｐ−Ａ！ｙＧａｌ□ＡＳクラッド
、層６：Ｓｉ　　ドープＡ！、Ｇａ、−ｚＡｓ電！＊Ｆ
Ｊ７：ｐ堅ＧａＡＳ基収 ８：ｐ側を奴 第２図 第１図 第４図 第３図 ［FIG. 1 is a cross-sectional view showing a semiconductor laser manufactured by the manufacturing method according to the present invention, and FIGS.
The figure is a sectional view showing a semiconductor laser manufactured by another manufacturing method according to the present invention. 1... n-side electrode. 2---S n doped n-Aj? Ga, -x A
s contact layer. 3-.-S i doped n-A,j: Ga1-
x As cladding layer. 4...Active layer. 5--- B e doped p-AA Ga 1-
y As cladding layer. 6--- S i dope A J Ga 1-
z A s current constriction layer. 7...p-type GaAs substrate. 8...p side electrode. Patent applicant Tateishi Electric Co., Ltd. Representative Patent attorney Kenji Ushiku (1 other person) 1:n
Side electrode 2: 3n doped n-Aj'xGa, -, As: 17 tact layer 3: Sr doped n-A/, Ga, -, As crystal 1ζ layer 4: Tongue R No. 5: Be doped p-A! yGal□AS cladding, layer 6: Si doped A! , Ga, -zAs electric! *F
J7: p-side GaAS group 8: p-side side Figure 2 Figure 1 Figure 4 Figure 3 [

Claims (1)

【特許請求の範囲】[Claims] （１００）面方位のｐ型ＧａＡｓ基板上、またはｐ型Ｇ
ａＡｓ層を表面層とするＧａＡｓ基板上に、ｎ＝１〜３
とする（ｎ１１）Ａ面を露出させる溝加工または段差加
工を施し、その上にＳｉドープＡｌＧａＡｓまたはＧａ
Ａｓを成長させ、その上にｎ型クラッド層をＳｉドープ
ＡｌＧａＡｓとする２重異種接合を設け、さらにｎ型キ
ャップ層を設けたことを特徴とする内部電流狭搾部をも
つ半導体レーザの製造方法。On a p-type GaAs substrate with (100) plane orientation, or on a p-type G
On a GaAs substrate with an aAs layer as a surface layer, n=1 to 3
(n11) Perform groove processing or step processing to expose the A side, and then Si-doped AlGaAs or Ga
A method for manufacturing a semiconductor laser having an internal current constriction portion, characterized in that a double heterojunction is grown on which As is grown, an n-type cladding layer is made of Si-doped AlGaAs, and an n-type cap layer is further provided. .
JP5296487A 1986-05-14 1987-03-10 Manufacture of semiconductor laser Pending JPS63220587A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5296487A JPS63220587A (en) 1987-03-10 1987-03-10 Manufacture of semiconductor laser
US07/048,616 US4839307A (en) 1986-05-14 1987-05-11 Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
US07/297,025 US5010556A (en) 1986-05-14 1989-01-13 A stripe-shaped heterojunction laser with unique current confinement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5296487A JPS63220587A (en) 1987-03-10 1987-03-10 Manufacture of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS63220587A true JPS63220587A (en) 1988-09-13

Family

ID=12929572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5296487A Pending JPS63220587A (en) 1986-05-14 1987-03-10 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS63220587A (en)

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