JPS62265747A - Cooler for semiconductor - Google Patents
Cooler for semiconductorInfo
- Publication number
- JPS62265747A JPS62265747A JP10846086A JP10846086A JPS62265747A JP S62265747 A JPS62265747 A JP S62265747A JP 10846086 A JP10846086 A JP 10846086A JP 10846086 A JP10846086 A JP 10846086A JP S62265747 A JPS62265747 A JP S62265747A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- bellows
- refrigerant
- pressure
- irregular load
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 239000003507 refrigerant Substances 0.000 claims abstract description 18
- 238000001816 cooling Methods 0.000 claims description 11
- 230000008602 contraction Effects 0.000 claims description 7
- 230000007547 defect Effects 0.000 abstract description 2
- 230000001788 irregular Effects 0.000 abstract 4
- 238000009835 boiling Methods 0.000 description 5
- 230000000452 restraining effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- BOSAWIQFTJIYIS-UHFFFAOYSA-N 1,1,1-trichloro-2,2,2-trifluoroethane Chemical compound FC(F)(F)C(Cl)(Cl)Cl BOSAWIQFTJIYIS-UHFFFAOYSA-N 0.000 description 1
- AJDIZQLSFPQPEY-UHFFFAOYSA-N 1,1,2-Trichlorotrifluoroethane Chemical compound FC(F)(Cl)C(F)(Cl)Cl AJDIZQLSFPQPEY-UHFFFAOYSA-N 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体冷却装置に係り、特に、半導体の均一加
圧に好適な半導体冷却装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor cooling device, and particularly to an improvement of a semiconductor cooling device suitable for uniformly pressurizing a semiconductor.
従来の装置は、特開昭５８−３６１７３号公報に記載の
ように、容器の外壁面に半導体を接触させて、半導体の
発熱によって容器内の冷媒を沸騰させ、この沸騰した冷
却をベローズを介して凝縮器に導き、冷却、液化する構
造となっていた。As described in Japanese Patent Application Laid-Open No. 58-36173, a conventional device brings a semiconductor into contact with the outer wall of a container, causes the heat generated by the semiconductor to boil the refrigerant in the container, and cools the boiled water through a bellows. The structure was such that it was guided to a condenser, cooled, and liquefied.
しかし、容器内冷媒の蒸気圧が、半導体の加圧力に偏荷
重として影響を及ぼす点については考慮されていなかっ
た。However, no consideration was given to the fact that the vapor pressure of the refrigerant in the container affects the pressing force on the semiconductor as an uneven load.
従来装置の一例を第３図ないし第６図に断面で示す。第
３図は冷却装置の全体を第４図は第３図、の■部を拡大
して示しており、第５図は第４図の断面■−■である。An example of a conventional device is shown in cross section in FIGS. 3 to 6. FIG. 3 shows the entire cooling device, and FIG. 4 is an enlarged view of section 2 in FIG. 3, and FIG.
又、第６図は第３図の■矢視図を示している。半導体素
子１は放熱面を沸騰容器２の外壁面に接触させて冷却を
行なっており。Further, FIG. 6 shows a view taken in the direction of the arrow ■ in FIG. The semiconductor element 1 is cooled by bringing its heat radiation surface into contact with the outer wall surface of the boiling vessel 2.
沸騰容器２の内部ではボスト３、フィン４に熱が伝わり
、更に、フィン４から冷媒５〜と伝えられる。冷媒５は
フィン４から得た熱で沸騰し、その蒸気はｒｌ縮器６の
内部へ導かれる。′Ｉ５縮管７．フィン８とで構成され
ており、凝縮管７は外部の空気８．フィン９によって冷
却されている。このため、凝縮管７へ入った蒸気は凝縮
し液化し、重力によって沸騰容器２へと′Ｑ流する。冷
媒の液面はＩＯであり、又、半導体１はアノード、カソ
ード側で電位が異なり、更に、複数の半導体を使用する
場合には、半導体相互間を絶縁する必要があり、沸騰容
器２と凝縮器６間を絶縁継手１１で接続している。又、
半導体に不具合があった場合、交換が便利なようにベロ
ーズ１２が接続されている。Inside the boiling vessel 2, heat is transmitted to the boss 3 and fins 4, and further from the fins 4 to the refrigerant 5. The refrigerant 5 is boiled by the heat obtained from the fins 4, and its vapor is led into the RL condenser 6. 'I5 contraction7. The condensing pipe 7 is composed of external air 8. It is cooled by fins 9. Therefore, the steam entering the condensing pipe 7 is condensed and liquefied, and flows into the boiling vessel 2 by gravity. The liquid level of the refrigerant is IO, and the potential of the semiconductor 1 is different between the anode and cathode sides.Furthermore, when using multiple semiconductors, it is necessary to insulate the semiconductors from each other, and the boiling container 2 and condensation The devices 6 are connected by an insulating joint 11. or,
A bellows 12 is connected for convenient replacement in the event of a defect in the semiconductor.
１３はフランジ。13 is a flange.
上記従来技術は容器内冷媒の蒸気圧が半導体の加圧力に
影響を及ぼす点について配慮がされておらず、半導体の
加圧力に偏荷重が加わる問題があった。The above-mentioned conventional technology does not take into consideration the fact that the vapor pressure of the refrigerant in the container affects the pressing force of the semiconductor, and there is a problem in that an uneven load is applied to the pressing force of the semiconductor.
第７図に半導体の冷却に使用される冷媒フロン１１３
（トリクロロ、トリフルオロエタン）の蒸気圧線図を示
す、冷媒の蒸気圧は温度によって変り、４７．６℃で大
気圧、これより温度が低い場合には容器内が負圧、４７
．６°Ｃより温度が高い場合には正圧となる。今８０℃
の場合を考えるとゲージ圧力で約２ ｋｇ ／ ｃＪと
なり、第６図ではＰの圧力、すなわち、２ ｋｇ ／
ａｌが夫々の容器に加わることになる。ベローズ１２の
内径が２．５ｃｍである場合には、その断面積が約５ｄ
となり、圧力Ｐ＝２ｋｇ／ｃｏｆの場合には約１０ｋｇ
の力が夫々の容器に加わり、第６図のように容器２が四
個の場合には４０ｋｇが加わることになる。Figure 7 shows refrigerant Freon 113 used for cooling semiconductors.
(trichloro, trifluoroethane). The vapor pressure of the refrigerant changes depending on the temperature. At 47.6°C, it is atmospheric pressure, and when the temperature is lower than this, the inside of the container is under negative pressure.
．． If the temperature is higher than 6°C, there will be positive pressure. 80℃ now
Considering the case of , the gauge pressure is approximately 2 kg/cJ, and in Figure 6, the pressure of P, that is, 2 kg/cJ.
al will be added to each container. When the inner diameter of the bellows 12 is 2.5 cm, its cross-sectional area is approximately 5 d.
Therefore, when the pressure P = 2 kg/cof, it is approximately 10 kg
A force of 40 kg is applied to each container, and when there are four containers 2 as shown in FIG.
一方、半導体は冷却のため沸騰容器２にはさまれ両側か
らＦの力で加圧、接触している。力Ｆは半導体の接触面
全面に均一に分散して加えられることが望ましいが、前
述の蒸気圧によって、第６図の紙面の下方に力が加えら
れているため半導体の接触面での加圧力はｆ□＞ ｆ
２となり、加圧力がアンバランスになる。すなわち、偏
荷重が加わることになる。この偏荷重は半導体にとって
耐え得る範囲内であれば問題は生じないが、冷媒を高い
温度で使用しようとすると偏荷重が半導体に許容値を超
えるため、冷媒温度を低く迎えなければならない欠点が
あった。On the other hand, the semiconductor is sandwiched between the boiling containers 2 for cooling and is pressed and contacted by the force of F from both sides. It is desirable that the force F be applied in a uniformly distributed manner over the entire contact surface of the semiconductor, but due to the aforementioned vapor pressure, the force is applied below the plane of the paper in Figure 6, so the pressing force on the contact surface of the semiconductor is is f□＞f
2, and the pressurizing force becomes unbalanced. In other words, an unbalanced load will be applied. This unbalanced load does not pose a problem as long as it is within a range that the semiconductor can withstand, but if you try to use the refrigerant at a high temperature, the unbalanced load will exceed the allowable value for the semiconductor, so there is a drawback that the refrigerant temperature must be kept low. Ta.
本発明の目的は半導体に与える偏荷重を低く迎えながら
冷媒温度を高い状態で使用可能な半導体冷却装置を提供
することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor cooling device that can be used at a high refrigerant temperature while receiving a low uneven load on the semiconductor.
上記圧力Ｐが容器２に力を及ぼすのはベローズ１２が伸
びるからであり、この伸びを拘束することにより容器２
への力は抑制される。すなわち、圧力Ｐによる力はこの
拘束する構造物にかかることになる。The pressure P exerts a force on the container 2 because the bellows 12 expands, and by restraining this expansion, the container 2
The power to is suppressed. That is, the force due to the pressure P is applied to this restraining structure.
本発明の目的は偏荷重を抑制し、半導体に本来の性能を
発揮させ、ベローズの伸びを拘束することにより達成さ
れる。The object of the present invention is achieved by suppressing unbalanced loads, allowing the semiconductor to exhibit its original performance, and restraining the elongation of the bellows.
冷媒温度が４７．６°Ｃより低い場合には蒸気圧は負圧
となるので、ベローズの収縮を拘束しなければならない
。このため、ベローズは伸縮の抑来が必要となる。When the refrigerant temperature is lower than 47.6°C, the vapor pressure becomes negative, so contraction of the bellows must be restrained. For this reason, the bellows must be restrained from expanding and contracting.
ベローズの伸縮を拘束することはベローズの機能を全く
殺すことではなく、軸方向の伸縮のみを拘束し、左右方
向の首振りは自由にさせておくことを意味している。こ
のため、半導体を交換する時には、第６図で左右方向に
ベローズ１２の頁を振らして半導体１と容器２の間隔を
空けて半導体を交換することができる。Restricting the expansion and contraction of the bellows does not mean killing the function of the bellows at all, but means restricting only the expansion and contraction in the axial direction and leaving the oscillation in the left and right directions free. Therefore, when replacing the semiconductor, the bellows 12 can be swung horizontally in FIG. 6 to create a space between the semiconductor 1 and the container 2, and the semiconductor can be replaced.
このような機構にするための一方法はベローズ１２の近
傍にリンク機構を設けることであり、又、冷却装置を大
形化させないためにはベローズ内部にリンク機構を取付
けることにより、これらを解決することができる。One way to create such a mechanism is to provide a link mechanism near the bellows 12, and in order to avoid increasing the size of the cooling device, these problems can be solved by installing a link mechanism inside the bellows. be able to.
１１以下１本発明の実施例を第１図、第２図により説明
する。図において２１はベローズ１２内に取付けたリン
クであり、ピン２２は両端がベローズ１２に固定されて
おり、中央部はリンクと係合している。このリンク２１
．ピン２２によりベローズ１２は軸方向の伸縮が拘束さ
れる。又、ベローズの左右動はリンク２１がピン２２と
の係合部で回動できるため可能である。11 Below, an embodiment of the present invention will be described with reference to FIGS. 1 and 2. In the figure, reference numeral 21 indicates a link installed within the bellows 12, and both ends of the pin 22 are fixed to the bellows 12, and the center portion engages with the link. This link 21
．． The pin 22 restricts expansion and contraction of the bellows 12 in the axial direction. Further, the bellows can be moved laterally because the link 21 can rotate at the engagement portion with the pin 22.
このリンク機構により、冷媒の蒸気圧が高くなった場合
には、リンク２１に引張力が作用してベローズ２１の伸
びを迎え、容器２に対し左方（第１図、第２図について
）に作用する力を無くすることが可能となる。このため
、蒸気圧によって生じる半導体接触面の偏荷重を無くし
、半導体１には均一な加圧力を与えることが可能となる
。又、リンク機構であり１回転が可能であることからベ
ローズ１２の首振りは可能で、半導体交換時には何等支
障は生じない。Due to this link mechanism, when the vapor pressure of the refrigerant becomes high, a tensile force is applied to the link 21, causing the bellows 21 to elongate and move to the left with respect to the container 2 (see Figs. 1 and 2). It becomes possible to eliminate the acting force. Therefore, it is possible to eliminate uneven load on the semiconductor contact surface caused by vapor pressure, and to apply a uniform pressing force to the semiconductor 1. Further, since it is a link mechanism and can rotate once, the bellows 12 can be oscillated, and no problem will occur when replacing semiconductors.
更に、第１図、第２図では、リンク機構をベローズ１２
の内部に収納しており構造が簡単で、装置の大型化を押
えることができる。Furthermore, in FIGS. 1 and 2, the link mechanism is a bellows 12.
The structure is simple, and it is possible to prevent the device from becoming larger.
本実施例によれば、半導体加圧力の偏荷重を抑制するこ
とができ、半導体の性能を十分にＪ８揮させることがで
きる。According to this embodiment, it is possible to suppress the unbalanced load of the semiconductor pressurizing force, and it is possible to fully demonstrate the performance of the semiconductor J8.
又、半導体交換時には半導体の加圧力を解放するが、従
来構造のリンク機構が無く、温度が低い場合にはベロー
ズの収縮量が不揃いとなり、半導体の交換に労を要した
が１本発明によれば、これも解決されることになり、作
業上の効果もある。In addition, when replacing a semiconductor, the pressing force on the semiconductor is released, but there is no link mechanism in the conventional structure, and when the temperature is low, the amount of contraction of the bellows becomes uneven, making it laborious to replace the semiconductor. If so, this problem will also be resolved, and there will be some operational benefits.
本発明によれば、半導体加圧力の偏荷重を抑制すること
ができ、半導体の性能を十分に発揮させることができる
。According to the present invention, it is possible to suppress the unbalanced load of the semiconductor pressing force, and the performance of the semiconductor can be fully exhibited.
第１図は本発明の一実施例の半導体冷却装置の部分断面
図、第２図は第１図の■−■矢視断面図。
第３図は従来の冷却装置の断面図、第４図は第３図の■
部拡大図、第５図は第４図のＶ部所面図、第６図は第３
図の■矢視図、第７図は冷媒の蒸気圧線図を示す。
ゝ、 ２FIG. 1 is a partial cross-sectional view of a semiconductor cooling device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line ■-■ in FIG. Figure 3 is a cross-sectional view of a conventional cooling device, and Figure 4 is
Figure 5 is an enlarged view of the V section in Figure 4, Figure 6 is a view of the V section in Figure 4, and Figure 6 is an enlarged view of the
Figure 7 shows the vapor pressure diagram of the refrigerant.ゝ, 2
Claims (1)
熱によつて前記容器の内部の冷媒を沸騰させ、前記冷媒
をベローズを介して凝縮器に導き、冷却、液化する半導
体冷却装置において、前記ベローズの軸方向の伸縮を拘
束する機構を備えたことを特徴とする半導体冷却装置。 ２、前記ベローズ内にリンク機構を備え、前記ベローズ
の軸方向の伸縮を拘束したことを特徴とする特許請求の
範囲第１項記載の半導体冷却装置。[Claims] 1. A semiconductor is brought into contact with the outer wall surface of a container, a refrigerant inside the container is boiled by the heat generated by the semiconductor, and the refrigerant is led to a condenser through a bellows to be cooled and liquefied. What is claimed is: 1. A semiconductor cooling device comprising: a mechanism for restricting expansion and contraction of the bellows in the axial direction; 2. The semiconductor cooling device according to claim 1, wherein a link mechanism is provided in the bellows to restrict expansion and contraction of the bellows in the axial direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10846086A JPH0644597B2 (en) | 1986-05-14 | 1986-05-14 | Semiconductor cooling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10846086A JPH0644597B2 (en) | 1986-05-14 | 1986-05-14 | Semiconductor cooling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62265747A true JPS62265747A (en) | 1987-11-18 |
| JPH0644597B2 JPH0644597B2 (en) | 1994-06-08 |
Family
ID=14485327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10846086A Expired - Lifetime JPH0644597B2 (en) | 1986-05-14 | 1986-05-14 | Semiconductor cooling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0644597B2 (en) |
-
1986
- 1986-05-14 JP JP10846086A patent/JPH0644597B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0644597B2 (en) | 1994-06-08 |
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