JPS62264836A - Combined machine for thin substrate - Google Patents

Abstract

PURPOSE:To permit a single set of machine to obtain a high accurate thin substrate, by providing a thin substrate cutting mechanism, which consists of a bearing turnably supporting a cylindrical blade fixing frame, and a grinding mechanism which comprises a main spindle and a grinding tool. CONSTITUTION:A substrate cutting mechanism 20, which secures a bearing 21 to a bed 10, rotatably supports a blade fixing frame 22 by the bearing 21. The blade fixing frame 22 is formed into a cylindrical shape, and its one end part fixes a blade 23 in a tensely tightened condition. An ingot supporting mechanism 30 high accurately moves between a grinding mechanism 40 and the thin substrate cutting mechanism 20 by a guide mechanism comprising a guide 12, feed screw thread 13, etc. provided on the bed 10. The grinding mechanism 40, which is provided on the bed 10, comprises a driving motor 43, main spindle 41 and a grinding tool 42. Accordingly, a single set of machine continuously performs end surface grinding of an ingot 31 and cutting of a thin substrate.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a multi-tasking machine used for manufacturing thin substrates of crystal, silicon, hyphenium, etc., and particularly,
The present invention relates to a multi-processing machine for manufacturing thin substrates, which allows a single machine to perform grinding of an ingot end face and cutting into thin pieces of the ground ingot end face.

[Conventional technology]

Conventionally, the method of manufacturing thin substrates, such as wafers, by cutting thin ingots of crystals such as quartz or silicon is as follows:
Usually, a method consisting of five main steps as shown in FIG. 6 is adopted.

That is, the ingot is cut into thin pieces in a wafer cutting step 601, and the periphery of the cut wafer is chamfered in a beveling step 602 to prevent chips, scratches, cracks, etc. from occurring during lapping. Next, in a lapping step 606, the wafer is lapped to remove warpage generated during cutting, crack layers and marks on the wafer surface, and process the wafer so that it has a predetermined thickness.

After that, in the polishing process 6o4, in order to remove the warpage of the wafer and improve its smoothness, polishing is performed on both sides of the wafer, and then etching process 605 is performed.
An etching process is performed to remove the altered layer on the front surface of the wafer caused by machining. Finally, in a mirror polishing process 606, the mirror surface of the wafer is polished again and finished, resulting in a final wafer.

[Problems to be solved by the invention]

In manufacturing such wafers, when processing the wafer,
In particular, removing warpage that occurs when cutting wafers is a major issue. Therefore, various wafer cutting methods have been proposed, but with any of the methods, it is difficult to cut the wafer while greatly reducing the occurrence of warpage. For this reason, it is necessary to reliably remove the warp in the processing step after cutting the wafer, but conventional wafer manufacturing methods have not been able to sufficiently remove the warp.

In the conventional wafer manufacturing method, the following reasons are thought to be the reasons why warpage generated during wafer cutting cannot be sufficiently removed.

In other words, when cutting a wafer in the wafer cutting process, the wafer 71 is cut due to changes in cutting resistance due to cuts during cutting, deformation of the blade (pressure oil) caused by heat generation, etc.
Warping occurs (Fig. 7(a)). Therefore, in the lapping process and the polishing process, the wafer 71 is processed while applying pressure with the upper and lower surface plates 75 and 76 to remove the warpage (FIG. 7(b)).

However, in this case, the wafer 71 is a thin piece, and
- One side is concave and the other side is convex (sometimes both sides are concave), and the entire surface is arched, so the surface plate 75.
When pressure is applied from above and below by 76, the elasticity of the wafer 71 causes the wafer 71 to bend into a flat shape.

For this reason, although the warpage that occurs when the material bends and becomes flat can be removed by lapping and polishing, the warpage that occurs when the material bends and becomes flat when pressure is applied cannot be removed. Therefore, when the vertical pressure from the surface plates 75 and 76 is removed, the wafer returns to its warped shape (FIG. 7(C)), and warpage of a predetermined value of 1 or more cannot be removed. If you want to minimize the warpage, it may be possible to reduce the pressure applied by the upper and lower surface plates 75 and 76, but since the processing time will increase accordingly, the production efficiency will deteriorate and it is not practical.

The present invention relates to a processing machine for solving the above-mentioned problems, and aims to provide a multi-purpose processing machine that is particularly effective for manufacturing high-precision wafers through the main manufacturing process as shown in FIG. It is something to do. In the manufacturing process described above, the end face of the ingot is ground into a flat reference surface in an end face grinding process 501, and then a wafer cutting process 50 is performed.
In step 2, the end face side of the ingot is cut into thin pieces to create a wafer, and then the peripheral edge is chamfered in a beveling process 506, followed by a lapping process 504, a polishing process 505, 506, etc. It is used to manufacture wafers.

Here, the lapping steps 504 and 506 and the borizing steps 505 and 506 are aimed at removing wafer warpage and saw marks as in the conventional manufacturing method, but according to the present manufacturing method, the initial end face Since the wafer is lapped and polished using the flat reference surface created in the grinding step 501 as a reference, even if pressure is applied in the vertical direction of the wafer by the upper and lower surface plates, the entire wafer will not bend or deform. It has an excellent effect of being able to reliably and sufficiently remove warpage in lapping and polishing processes.

The present invention simplifies the manufacturing process and achieves higher precision and higher quality by making it possible to perform edge grinding and wafer cutting in a single machine in the thin substrate manufacturing method described above. The purpose of the present invention is to provide a multi-tasking machine for manufacturing thin substrates that is capable of manufacturing wafers (thin substrates).

[Means for solving problems and their effects]

In order to achieve the above object, the multi-processing machine for manufacturing thin substrates according to the present invention includes a blade identification frame having a blade at the front portion and forming a cylindrical TC shadow, and a support member rotatably supporting the blade fixing frame. a grinding mechanism equipped with a rotatable grinding tool installed alongside the thin substrate cutting mechanism; and a grinding mechanism provided opposite the thin substrate cutting mechanism and the grinding mechanism to fix the ingot. an ingot support mechanism including an index slide mounted so as to be movable back and forth with respect to the blade fixing frame; and a moving table on which the ingot support mechanism is mounted so as to be movable between the blade fixing frame and the grinding mechanism. It is composed (・ru.

With this configuration, one machine can grind the end face of the ingot to create a flat reference surface, and
You can create a thin substrate by cutting the end face of this ingot into thin pieces.

〔Example〕

Hereinafter, one embodiment of the present invention will be described based on FIGS. 1 to 4.

FIG. 1 is a plan view including a partial cross section of this embodiment, FIG. 2 is a side view also including a partial cross section, FIG. 3 is a front view, and FIG. 4 is an explanatory view showing the state of cutting and end face grinding. .

In these drawings, 10 is a bed, 20 is a thin substrate cutting mechanism, 30 is an ingot support mechanism, and 40 is a grinding mechanism.

The thin substrate cutting mechanism 20 has a bearing 21 fixed to the bend 10, and may be configured by selecting an aerostatic pressure bearing in consideration of rotation accuracy, durability, etc.) The blade fixing frame 22 is rotatably supported by the bearing 21. ing. The blade fixing frame 22 is formed into a cylindrical shape, and one end thereof has a structure for fixing the blade 23 in a tensioned state (not shown), and the other end has a structure for holding and transporting a thin substrate (not shown). ), etc., in an open state. A pulley or gear 24 is formed on the outer periphery of the other end of the blade fixing frame 22, and the rotation of the motor 25 is transmitted through a transmission member such as a belt 26.

In this embodiment, a belt 26 is stretched between the motor 25-side boob IJ 25 a and the blade fixing frame 22-side pulley 24 .

The ingot support mechanism 30 is provided facing the thin substrate cutting mechanism 20, and is made up of main parts such as a guide 12, a feed screw 16, and a drive motor 14 provided on the bed 1o. The mechanism allows movement between the grinding mechanism 40 and the thin substrate cutting mechanism 2o with high precision. The ingot support mechanism 60 includes a guide 35,
An ingot support member is attached to a table mechanism composed of a feed screw 36, a drive motor 37, an indexing slide 34, etc.

The ingot 31 is fixed and placed on the blade 33 via an adhesive substrate 32 made of carbon or the like, and the ingot 61 can be moved back and forth with respect to the blade fixing frame, and is marked and positioned by the 1 drive motor 37.

The grinding mechanism 40 is provided on the bed 10 apart from the thin substrate cutting mechanism 20, and is composed of a drive motor 43, a main shaft 41, and a grinding tool 42 (in this embodiment, the drive motor 46 Although the main shaft 41 and the main shaft 41 have a direct connection structure, it is of course possible to use a belt drive method or the like as appropriate.

Incidentally, the same applies to the main shaft 41 (it is not specified, but it is also possible to adopt a hydrostatic wheel bearing or the like assuming high precision and high quality).

Next, referring to FIGS. 4(a) and 4(bl), an example of the operation of this multitasking machine will be described. Input drive signals to the Y-axis and Y-axis, respectively.
Control the axis and set the position at 6 points.

Since the warpage of the cut surface is usually 10 to 20 μm, the finishing allowance for the grinding tool 42 may be determined appropriately.

Next, by inputting a motion signal to the drive motor 14 and controlling the Y-axis, the ingot 61 is moved by a stroke X1 to a position facing the grinding mechanism 40, and the end face is ground to form the flat reference surface described above. Next, the drive motor 37
The Y-axis moves by a stroke of X1 and leaves the grinding tool 42 (point E in the figure). Next, in this state, move the X-axis stroke X2 with (・) and move to point F, the position where the blade center axis and shaft center coincide with each other. The 'AM surface of the ingot is positioned at point A, which protrudes violetly from the blade 23. In this case, the amount of protrusion from the blade 26 on the end face of the ingot is usually the warp dimension of 10 to 20 μm plus the thickness of the thin substrate. Then, at the same time as positioning the ingot 31, the X-axis is rotated to move the stroke X3 required for cutting, and the cutting is completed.

(Point B in the figure) Immediately before completion of cutting, a thin substrate holding and transporting mechanism (not shown) operates, and the separated thin substrate is attracted by a vacuum chuck or the like and placed on a transport system. Next, control the Y axis and move by stroke Yl to return to point C and complete the entire process.

The thin substrate 31a, whose surface has been ground into a flat reference surface in this way, is then transported to the next step, where processing such as grinding, lapping, and bolin knobs is performed using the reference surface as described in I above as a reference. Let's go.

Note that the operation diagram shown in FIG. 4 (bl) is a general diagram and is not limited thereto.

According to such a multi-tasking machine, it is possible to continuously perform end face grinding of an ingot (in other words, forming a reference surface mark on a thin substrate) and cutting of a thin substrate with a single machine with a simple structure. You can do it. Therefore, warping or saw marks can be reliably removed to produce high-precision, high-quality thin substrates. still,
According to this configuration, by configuring fewer driving parts, error factors that occur during driving can be reduced, resulting in high precision and
High quality thin substrates can be obtained.

In addition, the thin substrate to be processed by the multitasking machine of the present invention is
Not only wafers as substrates for semiconductors (applicable to various similar thin substrates).Furthermore, materials for thin substrates include crystal, Noricon, and Hygallium, as well as lithium oxide, optical glass, etc. It can also be applied to thin substrates made of .

〔'Effect of the invention〕

As described above, according to the multi-tasking machine of the present invention, a single machine can perform both the grinding process of the end face of an ingot and the cutting process of a thin substrate, and a thin substrate with high precision and high quality can be obtained. It can be applied to various fields such as those mentioned above, and its industrial effects are very large.

[Brief explanation of drawings]

Figures 1 to 1 show one embodiment of the present invention,
FIG. 1 is a plan view including a partial cross section of this embodiment, FIG. 2 is a side view including a partial cross section facing the opposite direction, FIG. 3 is a front view, and FIG.
al is an explanatory diagram showing the state of cutting and end face grinding, al is an operation sequence diagram, FIG. 5 is a process diagram showing an example of the thin substrate manufacturing method using the multitasking machine of the present invention, and FIG. and FIG. 7 (al, (bl, (C1) is a process diagram showing an example of a conventional thin substrate manufacturing method and an explanatory diagram of occurrence of warping. 10 Bed, 20 - Thin substrate cutting mechanism, 30...
...Ingot support F'lJ ff4.40...
Grinding fitting groove, 12.35...Guide, 31 ・Implementation i・
, 26...Blade, 42...Grinding tool. Figure 1 Figure 3 Figure 4 0' c (b) Figure 5 @ 6 causes Figure 7 (a)

Claims (1)

[Claims] a thin substrate cutting mechanism comprising a cylindrical blade fixing frame with a blade at at least one end; a bearing fixed on a bed and rotatably supporting the blade fixing frame; and a thin substrate cutting mechanism arranged on the bed. a grinding mechanism consisting of a main spindle and a grinding tool installed separately from each other; an ingot support mechanism that faces the blade and the grinding tool and supports the ingot; A multi-tasking machine for thin substrates, comprising a movable table movable from grinding or from grinding to cutting, which grinds the end face of an ingot into a flat shape, and then cuts the end face side of the ingot into thin pieces.