JPS62264658A - Contact-type image sensor - Google Patents
Contact-type image sensorInfo
- Publication number
- JPS62264658A JPS62264658A JP61108091A JP10809186A JPS62264658A JP S62264658 A JPS62264658 A JP S62264658A JP 61108091 A JP61108091 A JP 61108091A JP 10809186 A JP10809186 A JP 10809186A JP S62264658 A JPS62264658 A JP S62264658A
- Authority
- JP
- Japan
- Prior art keywords
- light
- image sensor
- contact
- copy
- document
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発明はイメージセンサに関するもので、特に、原稿
を等倍(1対1)で読み取るための密着型イメージセン
サに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an image sensor, and particularly to a contact type image sensor for reading a document at the same magnification (1:1).
(従来の技術)
従来から、例えばファクシミリ、イメージスキャナ等の
装置に組み込まれて用いられ原稿を等゛メージセンサが
提案されている。このような密着型イメージセンサは縮
小光学系が不要であるため、装置の小型化が図れる等の
特徴を有している。この密着型イメージセンサは原稿か
らの反射光を受光するための多数の受光部を例えば原稿
の幅と同じ寸法となるようにアレイ状に具えている。又
、これら受光部に低温プロセス(200〜300℃の温
度)で大面積に作製できる水素化アモルファスシリコン
を用いる研究開発が行われている。(Prior Art) Conventionally, an image sensor has been proposed that is incorporated into a device such as a facsimile machine or an image scanner, and is used to scan a document. Since such a contact type image sensor does not require a reduction optical system, it has the feature that the device can be made smaller. This contact type image sensor includes a large number of light-receiving sections for receiving reflected light from a document, arranged in an array so as to have the same dimension as the width of the document, for example. Further, research and development is being conducted to use hydrogenated amorphous silicon, which can be manufactured in a large area by a low-temperature process (at a temperature of 200 to 300° C.), for these light-receiving parts.
このような密着型イメージセンサにおいては、原稿の読
み取りを高解像度で行うため原稿と、受光部とを密着さ
せる必要かあるが、反面、原稿に光を照射しこの原稿か
らの反射光を受光部で受光することによって原稿の読み
取りを行なわねばな゛ らないため、光源からの光を原
稿に照射(入射)させる方法が重要となる・
以F、図面を参照してこのような方法につき説明する。In such a close-contact image sensor, it is necessary to place the document and the light receiving section in close contact in order to read the document with high resolution. Since the document must be read by receiving light from the light source, a method for irradiating (injecting) the light from the light source onto the document is important.Hereinafter, this method will be explained with reference to the drawings. .
箪30は1f饗の宰1−塑イメーシセンサの轄明図であ
って、このイメージセンサを用いたW、稿読み取り装置
の概略を示したものである。支持体11に受光部13を
具えて成るイメージセンサ15と、原稿17との間に例
えば高さ7〜8mm程度のロッドレンズアレイ19が設
けられている。尚、このロッドレンズアレイ19と、受
光部13及び原稿17との間には光収束のための空隙が
それぞれ設けられている。又、例えばこのロッドレンズ
アレイ19の近傍に原稿に光を照射するための光源21
が設けられている。従って、この装置によれば、原稿1
7の情報を1対1で受光部13に導くことが出来る。The cabinet 30 is a schematic diagram of a plastic image sensor in the 1F hall, and shows an outline of a document reading device using this image sensor. A rod lens array 19 having a height of, for example, about 7 to 8 mm is provided between an image sensor 15 having a light receiving section 13 on a support 11 and an original 17. Note that gaps are provided between the rod lens array 19, the light receiving section 13, and the original 17 for light convergence. Further, for example, a light source 21 for irradiating light onto the original is provided near the rod lens array 19.
is provided. Therefore, according to this device, the original 1
7 information can be guided to the light receiving section 13 on a one-to-one basis.
又、第4図は従来の密着型イメージセンサの他の例の説
明図である。このイメージセンサの場合受光部13の中
央部分に光導入用の窓23が設けられていて、支持体l
!の、受光部13の設けである側とは反対側に設けられ
た光源21の光をこの窓23を通して原稿21に照射す
る。さらに、この受光部13上には第4図中25で示す
ような膜厚が数μm程度の透光性の絶縁膜が設けられて
いて、この絶縁膜25によって原稿と、受光部との間の
距離を維持して受光部で受光する原稿からの反射光1を
増加させていた。FIG. 4 is an explanatory diagram of another example of a conventional contact type image sensor. In the case of this image sensor, a window 23 for introducing light is provided in the center of the light receiving section 13, and a support l
! The original 21 is irradiated with light from a light source 21 provided on the side opposite to the side on which the light receiving section 13 is provided through this window 23 . Furthermore, a light-transmitting insulating film with a thickness of several μm as shown by 25 in FIG. The amount of reflected light 1 from the document received by the light receiving section is increased by maintaining the distance .
(発明が解決しようとする問題点)
しかしながら、ロッドレンズアレイを用いたような従来
の密着型イメージセンサアレイはロッドレンズアレイを
設ける分だけ、密着型イメージセンサアレイが大型にな
ってしまうという問題点かあった。さらに、このロッド
レンズアレイを用いる分だけ密着型イメージセンサが高
価になるという問題点があった。(Problems to be Solved by the Invention) However, a conventional contact type image sensor array using a rod lens array has a problem in that the size of the contact type image sensor array becomes large due to the provision of the rod lens array. There was. Furthermore, there is a problem in that the contact type image sensor becomes more expensive due to the use of this rod lens array.
又、受光部に光源からの光導入用の窓を有した構造の従
来の密着型イメージセンサの場合は、このイメージセン
サの製造工程において窓形成のための複雑な製造工程が
必要なこと及び窓と、受光部とを高精度に位置合わせし
ながら製造を行うことが必要であるという問題点があっ
た。従って、製造コストを高めること、製造歩留まりを
低下させること等の原因となる。さらに、受光部上に反
射光量を増加させるための絶縁膜を形成する工程が必要
であるという問題点があった。In addition, in the case of a conventional contact image sensor having a structure in which a light receiving part has a window for introducing light from a light source, a complicated manufacturing process for forming the window is required in the manufacturing process of this image sensor, and a window is required to form the window. There is a problem in that it is necessary to perform manufacturing while aligning the light receiving section and the light receiving section with high precision. Therefore, this causes an increase in manufacturing cost and a decrease in manufacturing yield. Furthermore, there is a problem in that it requires a step of forming an insulating film on the light receiving section to increase the amount of reflected light.
この発明の目的は、上述した問題点を除去し、簡易な構
造であっても原稿の読み取りを高解像度で行うことか出
来る密着型イメージセンサを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned problems and provide a contact image sensor that can read a document with high resolution even if it has a simple structure.
(問題点を解決するための手段)
この目的の達成を図るため、この発明によれば、支持体
に原稿からの反射光を受光するための受光部を具える密
着型イメージセンサにおいて、前述の受光部を前述の支
持体に設けた凹部内に設け、この凹部外の支持体部分に
原稿と接触する接触部を具えることを特徴とする。(Means for Solving the Problems) In order to achieve this object, the present invention provides a contact image sensor having a light receiving section on a support for receiving reflected light from a document, as described above. The present invention is characterized in that the light-receiving section is provided in a recess provided in the support described above, and a contact portion that comes into contact with the original is provided in a portion of the support outside the recess.
尚、原稿を照射する光源を、例えば支持体を透明性の支
持体を以って構成しこの支持体の、原稿と接触する側と
は反対側に設けたものとすることか出来る。この場合、
この光源の光が透明性支持体を透過し原稿を照射する。Note that the light source for irradiating the original can be constructed by, for example, a transparent support and provided on the opposite side of the support from the side that contacts the original. in this case,
The light from this light source passes through the transparent support and illuminates the original.
又は、支持体の凹部内に受光部と隣接させて発光部を形
成し、この発光部を原稿読み取りのための光源としても
良い。Alternatively, a light emitting section may be formed in the concave portion of the support body adjacent to the light receiving section, and this light emitting section may be used as a light source for reading the document.
(作用)
このような構成によれば、原稿がこの凹部外の支持体部
分の接触部によって支持される。さらに、受光部を凹部
内部に設けであるから原稿面と受光部上側表面との間に
は原稿からの反射光を充分に得ることが出来る程度の空
隙であって、かつ、高解像度で読み取りが行える程度に
狭い空隙が形成される。(Function) According to such a configuration, the document is supported by the contact portion of the support portion outside the recess. Furthermore, since the light-receiving section is provided inside the recess, there is a gap between the document surface and the upper surface of the light-receiving section, which is large enough to receive sufficient reflected light from the document, and which allows for high-resolution reading. A gap as narrow as possible is formed.
(実施例)
以ド、第1図及び71g2図を参照してこの発明の実施
例につき説明する。尚、これらの図はこの発明か理解出
来る程度に概略的に示しであるにすぎず、各構成成分の
寸法、形状及び配置関係は図示例に限定されるものては
ない。尚、各図において同一の構成成分については同一
の符号を付して示しである。又、従来と同一の構成成分
については同一の符号を付して示しである。(Example) Hereinafter, an example of the present invention will be described with reference to FIG. 1 and FIG. 71g2. It should be noted that these drawings are only schematic illustrations to the extent that the present invention can be understood, and the dimensions, shapes, and arrangement relationships of each component are not limited to the illustrated examples. In each figure, the same components are designated by the same reference numerals. In addition, the same components as in the prior art are denoted by the same reference numerals.
第1図はこの発明の密着型イメージセンサを示す断面図
である。尚、第1図を図面か複雑化することを回避する
ため、断面を示すハツチングを省略し示しである。FIG. 1 is a sectional view showing a contact type image sensor of the present invention. Note that, in order to avoid complicating the drawing in FIG. 1, hatching indicating the cross section is omitted.
第1図において、31は支持体を示し、この実施例の場
合この支持体31を例えばガラス等の透明性絶縁基板を
以って構成しである。又、この実施例の場合、この透明
性絶縁基板31の原稿17と密着する側の基板面に紙面
と垂直な方向と平行な方向に長尺形状の凹部33を設け
である。さらに、この実施例の場合この凹部33の内部
底面の、凹部33の幅方向のほぼ半分の領域上でかつ凹
部33の長尺方向と平行な領域上に原稿からの反射光を
受光して原稿を読み取るための受光部13がアレイ状に
多数設けである。さらに、この凹部33内部底面の残り
の領域を例えば透明性絶縁基板31の、原稿17とは反
対側に設けられた光源21からの光を導入するための窓
領域35として機能するように構成しである。In FIG. 1, reference numeral 31 denotes a support, and in this embodiment, the support 31 is made of a transparent insulating substrate such as glass. In the case of this embodiment, an elongated recess 33 is provided on the side of the transparent insulating substrate 31 that is in close contact with the original 17 in a direction parallel to a direction perpendicular to the plane of the paper. Furthermore, in this embodiment, the reflected light from the original is received on the area on the inner bottom surface of the recess 33, which is approximately half the area in the width direction of the recess 33 and parallel to the longitudinal direction of the recess 33. A large number of light receiving sections 13 are provided in an array for reading the information. Further, the remaining area of the inner bottom surface of the recess 33 is configured to function as a window area 35 for introducing light from the light source 21 provided on the opposite side of the transparent insulating substrate 31 from the original 17, for example. It is.
尚、これ\らの受光部13を、凹部33の底面側から順
次に設けられた一方の電極及び遮光層を兼ねた第一電極
37と、例えば水素化アモルファスシリコンから成る受
光層39と、第一電極とは電気的に分離され透明導電膜
から成る第二電極41とで構成しである。又、第1図中
、43は受光部13を保護するための表面保護絶縁層を
示す。又、45は原稿17と接触する接触部を示し、こ
の場合透明性絶縁基板31の、凹部33外部の周辺部分
が接触部と成り、この部分と原i17とか接触する。It should be noted that these light-receiving parts 13 include a first electrode 37 which also serves as one electrode and a light-shielding layer, which are provided sequentially from the bottom side of the recess 33, a light-receiving layer 39 made of hydrogenated amorphous silicon, for example, The second electrode 41 is electrically separated from the first electrode and is made of a transparent conductive film. Further, in FIG. 1, reference numeral 43 indicates a surface protection insulating layer for protecting the light receiving section 13. Further, 45 indicates a contact portion that comes into contact with the original 17. In this case, the peripheral portion of the transparent insulating substrate 31 outside the recess 33 becomes the contact portion, and the original i17 comes into contact with this portion.
このような構造の密着型イメージセンサは、光源21を
発し透明絶縁性基板31を透過した光か原稿17を1)
α射し、この原i+7からの反射光が凹部33内部に設
けた受光部13によって受光され電気信号に変換される
。A contact type image sensor having such a structure detects the light emitted from the light source 21 and transmitted through the transparent insulating substrate 31 or the original 17 (1).
The reflected light from the source i+7 is received by the light receiving section 13 provided inside the recess 33 and converted into an electrical signal.
以ド、この発明の密着型イメージセンサの製造方法につ
き簡県に説明する。Hereinafter, a method for manufacturing a contact type image sensor according to the present invention will be briefly explained.
透明絶縁性基板31)Hにレジストを塗布した後、凹部
33を形成するためこの基板31の=一部をストライブ
状に露出するようなレジストパターンを形成する。次に
、プラズマエツチンク或いはフ・ン酸系エッチャントに
よフて、レジストパターンから露出している基板部分を
例えば数μm−数10μmの範囲内の好適な深さにエツ
チングする。After applying a resist to the transparent insulating substrate 31)H, a resist pattern is formed such that a portion of the substrate 31 is exposed in a stripe shape in order to form the recesses 33. Next, the portion of the substrate exposed from the resist pattern is etched to a suitable depth within the range of several micrometers to several tens of micrometers using plasma etching or a fluoric acid etchant.
次に、従来から行われているフォトエツチングプロセス
及びプラズマCVD、蒸着等の成膜技術を用いて第一電
極37、受光層39、第二電極41及び表面保護絶縁層
43を順次に形成して、この発明の密着型イメージセン
サを得ることが出来る。Next, a first electrode 37, a light-receiving layer 39, a second electrode 41, and a surface protection insulating layer 43 are sequentially formed using a conventional photoetching process, plasma CVD, vapor deposition, and other film forming techniques. , the contact type image sensor of the present invention can be obtained.
尚、凹部33内部に形成する受光部13の大きさ及び位
置を設計に応じ変更することが出来る。例えば凹部33
の側面から入射する光量が原稿読み取りのために必要な
光量以りである場合であれば、凹部33底面の全面に受
光部13を設けても良い。又、受光部13を設ける位置
を必要に応じ凹部33の側面としても良い。Note that the size and position of the light receiving section 13 formed inside the recess 33 can be changed depending on the design. For example, the recess 33
The light receiving section 13 may be provided on the entire bottom surface of the recess 33 if the amount of light incident from the side surface is greater than the amount of light necessary for reading the document. Further, the light receiving section 13 may be provided on the side surface of the recess 33 as required.
尚、透明性絶縁基板31に設ける凹部33の形状につい
ては、その凹部33の側面を受光部13の製造を行い易
いようななだらかな斜面とするのが好適である一0又、
凹部33の深さをこの凹部33内部に設ける受光部13
のF側表面と、原稿17の面との間に原稿17からの反
射光が充分に得られる程度の空隙が形成されるようなす
法とし、かつ、読み取り解像度か低■しないような適切
な空隙が得られるよう深さがあまり浅いと原稿17から
の反射光が受光部13全域に至らないため感度(明11
コ比)の低下を来す。又、凹部33の深さを必要以トに
深くした場合受光部13を形成するためのフォトリソグ
ラフィーの精度を低下させたり、隣接する受光部13へ
反射光が漏れ読み取り精度を低下させる等の弊害が生ず
るので、このような点を考慮して四部33の形状を決定
する必要がある。Regarding the shape of the recess 33 provided in the transparent insulating substrate 31, it is preferable that the side surface of the recess 33 be a gentle slope so that the light receiving section 13 can be easily manufactured.
The light receiving section 13 is provided with the depth of the recess 33 inside the recess 33.
A gap is formed between the F-side surface of the document 17 and the surface of the document 17 to the extent that sufficient reflected light from the document 17 can be obtained, and an appropriate gap is formed so as not to reduce the reading resolution. If the depth is too shallow to obtain a
This results in a decrease in the ratio of Furthermore, if the depth of the recess 33 is made deeper than necessary, there may be problems such as a decrease in the accuracy of photolithography for forming the light receiving section 13, or a reduction in reading accuracy due to the leakage of reflected light to the adjacent light receiving section 13. Therefore, it is necessary to decide the shape of the four parts 33 in consideration of such points.
隣接する受光部13への反射光の漏れを防止するため、
アレイ状に多数設ける受光部毎に対応させて複数の凹部
33を支持体にアレイ状に設けても良い。このような構
造の密着型イメージセンサの例を第2図に示しである。In order to prevent the reflected light from leaking to the adjacent light receiving section 13,
A plurality of recesses 33 may be provided in an array on the support body, corresponding to each of the light receiving portions provided in a large number in an array. An example of a contact type image sensor having such a structure is shown in FIG.
尚、第2図はこのような構造の密着型イメージセンサア
レイを原稿側から見て示したモ面図である。又、既に示
した第1図は第2図に示すニーI線における断面図に相
当するものである。Incidentally, FIG. 2 is a top view showing the contact type image sensor array having such a structure as viewed from the document side. Further, the already shown FIG. 1 corresponds to the sectional view taken along the knee I line shown in FIG. 2.
尚、丘述した実施例では、光源を支持体く透明性絶縁基
板)31の、原8!17とは反対側に別途設けf−4/
l”1で6日ロ+、t−が イ孕1λば −ン上シ体3
1に1)守けた凹部33内部に受光部13と隣接するよ
うに例えば発光素子を形成し、この発光素子を原稿読み
取り用の光源とすることも出来る。この場合であれば、
支持体31を透明性材料としなくとも良い。In the embodiment described above, the light source is separately provided on the side opposite to the base 8!17 of the support (transparent insulating substrate) 31.
l"1 and 6 days ro +, t- is 1 λ bar -n upper shi body 3
1) For example, a light emitting element may be formed inside the protected recess 33 so as to be adjacent to the light receiving section 13, and this light emitting element may be used as a light source for reading the document. In this case,
The support body 31 does not have to be made of a transparent material.
又、上述した実施例は受光部13をアレイ状に設けた密
着型イメージセンサとした例につき説明した。しかし、
例えば読み取り原稿の形状等に応じ受光部13の配置を
変更すると共に、凹部33の形状及び配置を変更し種々
の構造、例えばマトリクス状に受光部を配置したような
密着型イメージセンサを構成することも出来る。Furthermore, the above-described embodiments have been described with reference to examples in which the light receiving sections 13 are provided in an array as a contact type image sensor. but,
For example, the arrangement of the light receiving section 13 can be changed depending on the shape of the original to be read, and the shape and arrangement of the recessed section 33 can be changed to configure various structures, for example, a contact image sensor in which the light receiving sections are arranged in a matrix. You can also do it.
(発明の効果)
上述した説明からも明らかなように、この発明の密着型
イメージセンサによれば、原稿がこの凹部外の支持体部
分の接触部によって支持され、さらに、凹部内部に設け
た受光部の上側表面と、原稿面との間には原稿からの反
射光を充分に得ることか出来る程度の空隙であって、か
つ、高解像度で読み取りか行える程度に狭い空隙が形成
される。(Effects of the Invention) As is clear from the above description, according to the contact image sensor of the present invention, the document is supported by the contact portion of the support portion outside the recess, and the document is supported by the light receiving portion provided inside the recess. A gap is formed between the upper surface of the document and the document surface, which is large enough to receive sufficient reflected light from the document, and narrow enough to allow high-resolution reading.
従って、従来の様に受光部上に数μmの厚さの透明な絶
縁膜を設けなくとも、原稿を読み取ることが出来る。Therefore, the document can be read without providing a transparent insulating film several micrometers thick on the light receiving section as in the conventional case.
これがため、簡易な構造であっても原稿の読み取りを高
解像度で行うことが出来る密着型イメージセンサを提供
することが出来る。Therefore, it is possible to provide a contact type image sensor that can read a document with high resolution even if it has a simple structure.
第1図はこの発明の密着型イメージセンサの一実施例を
示す断面図、
第2図はこの発明の密着型イメージセンサの説明に供す
る平面図、
第3図及び第4図は従来の密着型イメージセンサの説明
図である。
13・・・受光部、 17・・・原稿21・
・・光源
31・・・支持体(透明性絶縁基板)
33・・・凹部、 35・・・窓領域37・
・・第一電極、 39・・・受光層41・・・
第二電極、 43・・・表面保護絶縁層15・・
・接触部。
特許出願人 沖電気工業株式会社代理人 弁理上
大 垣 孝 。
−″ 2−
?
イ疋東の^A−賢イメーシ゛tン寸の寥之フ月l゛第3
図
イ疋禾の2看型イメージでンqの説B月記第4図FIG. 1 is a sectional view showing an embodiment of the contact type image sensor of the present invention, FIG. 2 is a plan view for explaining the contact type image sensor of the present invention, and FIGS. 3 and 4 are conventional contact type image sensors. FIG. 2 is an explanatory diagram of an image sensor. 13... Light receiving section, 17... Original 21.
...Light source 31...Support (transparent insulating substrate) 33...Concave portion, 35...Window area 37.
...first electrode, 39...light-receiving layer 41...
Second electrode, 43... surface protection insulating layer 15...
・Contact part. Patent applicant Takashi Ogaki, attorney for Oki Electric Industry Co., Ltd. -″ 2-? The ^A-Ken image of Hitoto’s true story, Part 3
Figure 4 of the theory of Nq with the image of the 2-year-old model of Figure I
Claims (1)
部を具える密着型イメージセンサにおいて、 前記受光部を前記支持体に設けた凹部内に設け、該凹部
外の支持体部分に原稿と接触する接触部を具えることを
特徴とする密着型イメージセンサ。(1) In a contact image sensor in which a support is provided with a light receiving section for receiving reflected light from a document, the light receiving section is provided in a recess provided in the support, and a portion of the support outside the recess is provided. A contact image sensor characterized by having a contact part that comes into contact with a document.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61108091A JPS62264658A (en) | 1986-05-12 | 1986-05-12 | Contact-type image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61108091A JPS62264658A (en) | 1986-05-12 | 1986-05-12 | Contact-type image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62264658A true JPS62264658A (en) | 1987-11-17 |
Family
ID=14475641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61108091A Pending JPS62264658A (en) | 1986-05-12 | 1986-05-12 | Contact-type image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62264658A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19505964A1 (en) * | 1995-02-21 | 1996-08-29 | Siemens Ag | X-ray film image digitising device |
-
1986
- 1986-05-12 JP JP61108091A patent/JPS62264658A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19505964A1 (en) * | 1995-02-21 | 1996-08-29 | Siemens Ag | X-ray film image digitising device |
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