JPS6226459Y2 - - Google Patents

Info

Publication number
JPS6226459Y2
JPS6226459Y2 JP1982009231U JP923182U JPS6226459Y2 JP S6226459 Y2 JPS6226459 Y2 JP S6226459Y2 JP 1982009231 U JP1982009231 U JP 1982009231U JP 923182 U JP923182 U JP 923182U JP S6226459 Y2 JPS6226459 Y2 JP S6226459Y2
Authority
JP
Japan
Prior art keywords
wafer
substrate holder
substrate
holder
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982009231U
Other languages
Japanese (ja)
Other versions
JPS58111942U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP923182U priority Critical patent/JPS58111942U/en
Publication of JPS58111942U publication Critical patent/JPS58111942U/en
Application granted granted Critical
Publication of JPS6226459Y2 publication Critical patent/JPS6226459Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【考案の詳細な説明】 (a) 考案の技術分野 本考案はLPE膜成長作業において作業性を改
良した基板ホルダの構造に関する。
[Detailed description of the invention] (a) Technical field of the invention The invention relates to the structure of a substrate holder that improves workability in LPE film growth operations.

(b) 技術の背景 単結晶基板上に結晶軸を同じくする同種或は
異種結晶を成長せしめるエピタキシヤル技術は
半導体或は磁気バブルメモリデバイスなどに広
く用いられている。
(b) Background of the Technology Epitaxial technology, in which crystals of the same type or different types having the same crystal axis are grown on a single crystal substrate, is widely used in semiconductors and magnetic bubble memory devices.

こゝでエピタキシヤル成長には融液中で行う
液相エピタキシヤル成長(LPE)とガス雰囲気
中で行う気相エピタキシヤル成長とがあるが本
考案は液相エピタキシヤル成長(以後LPE)に
使用する基板ホルダに関するものである。
There are two types of epitaxial growth: liquid phase epitaxial growth (LPE) performed in a melt and vapor phase epitaxial growth performed in a gas atmosphere, but this invention is used for liquid phase epitaxial growth (hereinafter referred to as LPE). The present invention relates to a substrate holder.

以下磁性ガーネツト膜のLPE成長を例として
本考案を説明する。
The present invention will be explained below using LPE growth of a magnetic garnet film as an example.

磁気バブルメモリ用材料として使用される磁
性ガーネツトは非磁性であるガドリニウム・ガ
リウム・ガーネツトGd3Ga5O12(略称GGG)基
板の上にLPE成長法により形成されている。
The magnetic garnet used as a material for magnetic bubble memory is formed by LPE growth on a non-magnetic gadolinium gallium garnet Gd 3 Ga 5 O 12 (GGG) substrate.

こゝで基板として用いられるGGGは直径3
インチで厚さ約500μmのものが一般に用いら
れており、この上に必要とする組成をもつ磁性
膜を成長させるには必要なガーネツト成分から
なる酸化物を例えばPbO−B2O3系のフラツク
スと共に白金坩堝を用いて充分に熔融した後、
この融液中にGGG結晶基板(以下ウエハ)を
浸漬し液温を飽和点以下に保つことにより、
GGGウエハ上にこれと結晶軸の等しい磁性ガ
ーネツト結晶膜を成長せしめるものである。
The GGG used as the substrate here has a diameter of 3
Generally, a magnetic film with a thickness of approximately 500 μm in inches is used, and in order to grow a magnetic film with the required composition on this film, an oxide consisting of the necessary garnet component, such as a PbO-B 2 O 3 flux, is used. After sufficiently melting using a platinum crucible with
By immersing a GGG crystal substrate (hereinafter referred to as a wafer) in this melt and keeping the liquid temperature below the saturation point,
A magnetic garnet crystal film having the same crystal axis as the GGG wafer is grown on the GGG wafer.

こゝでLPE成長は経済性の面から複数個の
GGGウエハを基板ホルダに固定して融液中に
浸漬して行うが、ウエハの直径は3インチ
(76.2mm)と大きいにも拘わらずその厚さは約
500μmと薄く、また結晶は酸化物であるため
機械的に脆く、容易に割れ(クラツク)が発生
するのでウエハ保持については強い力はかけら
れない。
From an economic standpoint, LPE growth requires multiple
This is done by fixing a GGG wafer to a substrate holder and immersing it in the melt, but even though the wafer has a large diameter of 3 inches (76.2 mm), its thickness is approximately
Since it is thin at 500 μm and the crystal is an oxide, it is mechanically fragile and easily cracks, so strong force cannot be applied to hold the wafer.

またLPE成長は均一な膜成長を行うためにウ
エハを回転させ乍ら行う必要があり、この際融
液の比重が大きいので基板ホルダは可成りの強
度を必要とし、また材質として融液と反応しな
い金属であることが必要で、このため白金
(pt)が主として用いられ、また硬度の点から
白金・金(pt・Au)合金が用いられることも
ある。
In addition, LPE growth must be performed while rotating the wafer in order to achieve uniform film growth, and since the specific gravity of the melt is high, the substrate holder needs to be quite strong, and the material must react with the melt. For this reason, platinum (PT) is mainly used, and platinum-gold (PT-Au) alloys are sometimes used due to its hardness.

本考案はかゝる基板ホルダの構造に関するも
のである。
The present invention relates to the structure of such a substrate holder.

(c) 従来技術と問題点 第1図は基板ホルダの従来構造である。(c) Prior art and problems FIG. 1 shows a conventional structure of a substrate holder.

こゝで上部のキヤツプ1には直径約8mmのア
ルミナ棒が挿入され白金線などにより固定さ
れ、このアルミナ棒はモータに連結されて基板
ホルダが回転するようになつている。
Here, an alumina rod with a diameter of about 8 mm is inserted into the upper cap 1 and fixed with a platinum wire or the like, and this alumina rod is connected to a motor to rotate the substrate holder.

次に基板ホルダには長い支柱2と短い支柱3
があつて保持用リング4,5を支えているが、
短い支柱3は最上段の保持用リング4のみを支
え第2段以下の保持用リングは長い支柱2とこ
れより出ている2本の支持棒6により保持され
ている。
Next, the board holder has a long support 2 and a short support 3.
supports the retaining rings 4 and 5,
The short strut 3 supports only the uppermost retaining ring 4, and the second and lower retaining rings are held by the long strut 2 and two support rods 6 protruding from it.

なお第1図の基板ホルダは2個の保持用リン
グからなるように画いてあるが、実際には下側
の保持用リング5と同様な構造のものが複数個
直列に形成されている。
Although the substrate holder in FIG. 1 is illustrated as consisting of two holding rings, in reality, a plurality of rings having the same structure as the lower holding ring 5 are formed in series.

また各保持用リング4,5にはウエハの固定
用としてL字形の固定治具7が複数個(この実
施例は4個)設けてあり、ウエハは保持用リン
グの水平方向に出ているPt線或はPt板を保持台
とし、垂直方向のPt線或はPt板を爪として折り
曲げることによりウエハを固定していた。
Further, each holding ring 4, 5 is provided with a plurality of L-shaped fixing jigs 7 (four in this embodiment) for fixing the wafer, and the wafer is attached to a Pt that extends horizontally from the holding ring. A wire or a Pt plate was used as a holding base, and the wafer was fixed by bending the vertical Pt wire or Pt plate as a claw.

こゝで保持用リング4,5は支柱2に対して
10〜15゜傾けて設けられているが、この理由は
基板ホルダを融液より引き上げた際にウエハに
附着する融液の量をなるべく少くするためであ
る。
Here, the retaining rings 4 and 5 are attached to the column 2.
The wafer is tilted at an angle of 10 to 15 degrees, and the reason for this is to minimize the amount of melt adhering to the wafer when the substrate holder is lifted out of the melt.

かゝる構成をとる基板ホルダが一般に用いら
れているが、ウエハを基板ホルダにセツトする
場合、ウエハが薄くまた脆いために慎重に作業
する必要があり、そのためウエハの取り付けに
時間を要し作業性が悪かつた。
Substrate holders with such a configuration are generally used, but when setting a wafer in the substrate holder, it is necessary to work carefully because the wafer is thin and brittle, and therefore it takes time and labor to attach the wafer. It was a bad idea.

(d) 考案の目的 ウエハを基板ホルダに固定する作業性の向上
を目的とする。
(d) Purpose of the invention The purpose is to improve the workability of fixing a wafer to a substrate holder.

(e) 考案の構成 ウエハの基板ホルダへの固定法として従来保
持用リングに設けられている数個の固定治具を
用いて行つていたのに対し本考案は2個の支柱
の各段に夫々切り込み部を設けて基板周辺の1
部を把持させ、これに対向して各段の保持リン
グに1個又は2個の保持具を設けて基板周辺の
対向部を固定する構成となすものである。
(e) Structure of the device Conventionally, the wafer was fixed to the substrate holder using several fixing jigs provided on the holding ring, but the present invention uses two support holders at each stage. A notch is provided in each of the periphery of the board.
The structure is such that one or two holders are provided on each stage of the holding ring in opposition to this to fix the opposing parts around the substrate.

第2図は本考案を実施した基板ホルダの側面
図また第3図はこれを構成する保持用リングの
正面図である。
FIG. 2 is a side view of a substrate holder embodying the present invention, and FIG. 3 is a front view of a holding ring constituting the same.

すなわち長い2本の支柱8,9においてこれ
と保持用リング10の接合部に隣接してこの上
にウエハの厚みに見合つた切り込み部11と1
2とが設けられている。また2つの支柱を結ぶ
直線を底辺とする二等辺三角形の頂点相当位置
には従来と同じ固定治具13が設けられてい
る。
That is, in the two long columns 8 and 9, notches 11 and 1 corresponding to the thickness of the wafer are formed adjacent to the joint between the two long columns 8 and 9 and the holding ring 10.
2 is provided. Furthermore, the same fixing jig 13 as in the prior art is provided at a position corresponding to the apex of an isosceles triangle whose base is a straight line connecting the two supports.

すなわちウエハの固定法としては2つの支柱
に設けられている2つの切り込み部11,12
にウエハを挿入後固定治具13の爪を曲げるこ
とにより行われる。
In other words, the method for fixing the wafer is to use the two notches 11 and 12 provided on the two supports.
This is done by bending the claws of the fixing jig 13 after inserting the wafer.

なお固定されたウエハの安定化のためには第
3図に示すように長い2つの支柱8,9はかな
りの間隔をとる必要があり、これと固定治具1
3とを結んだ形状が正三角形状となることが望
ましい。
In order to stabilize the fixed wafer, it is necessary to leave a considerable distance between the two long supports 8 and 9 as shown in FIG.
It is desirable that the shape formed by connecting 3 and 3 is an equilateral triangle.

また更に安定した固定法としては保持用リン
グの中心より90゜の角度に2つの長い支柱8,
9があり、第1図の場合と同様に2個の固定治
具13を正四角形状に配置すればよい。
An even more stable fixing method is to install two long posts 8 at a 90° angle from the center of the retaining ring.
9, and two fixing jigs 13 may be arranged in a regular square shape as in the case of FIG.

(f) 考案の効果 本考案はLPE膜成長工程において基板ホルダ
にウエハを固定する作業性の向上を目的として
なされたもので、従来細心の注意を振つて保持
用リングに固定していたのに対し本考案のホル
ダを用いる場合は2個の支柱に設けられている
切り込み部に挿入後固定治具の爪を用いて固定
すればよく、そのため作業能率を大幅に向上す
ることができた。
(f) Effects of the invention This invention was made with the aim of improving the workability of fixing the wafer to the substrate holder during the LPE film growth process. On the other hand, when using the holder of the present invention, it is only necessary to insert the holder into the notches provided in the two pillars and then fix it using the claws of the fixing jig, which greatly improves work efficiency.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のLPE膜成長用基板ホルダの斜視
図、第2図は本考案にかゝる基板ホルダの側面
図、第3図、第4図は保持用リングの正面図であ
る。 図において、2,8,9は長い支柱、3は短い
支柱、4,5,10は保持用リング、7,13は
固定治具、11,12は切り込み部。
FIG. 1 is a perspective view of a conventional substrate holder for LPE film growth, FIG. 2 is a side view of the substrate holder according to the present invention, and FIGS. 3 and 4 are front views of a holding ring. In the figure, 2, 8, and 9 are long struts, 3 is a short strut, 4, 5, and 10 are retaining rings, 7 and 13 are fixing jigs, and 11 and 12 are notches.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 複数個の単結晶薄層基板を階層状に保持しなが
ら高温の溶液中に浸潰することにより該基板上に
エピタキシヤル成長を行う基板ホルダにおいて、
該ホルダの2個の支注の各段に設けられた夫々の
切り込み部と、各段の保持リング上に該切り込み
部に対向して設けられた1個又は2個の保持具と
により前記基板が固定されてなることを特徴とす
るLPE膜成長用基板ホルダ。
A substrate holder that performs epitaxial growth on a plurality of single-crystal thin-layer substrates by holding them in a layered manner and immersing them in a high-temperature solution,
The substrate is secured by a notch provided in each step of the two supports of the holder, and one or two holders provided opposite to the notch on the retaining ring of each step. A substrate holder for LPE film growth, characterized in that: is fixed thereto.
JP923182U 1982-01-26 1982-01-26 Substrate holder for LPE film growth Granted JPS58111942U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP923182U JPS58111942U (en) 1982-01-26 1982-01-26 Substrate holder for LPE film growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP923182U JPS58111942U (en) 1982-01-26 1982-01-26 Substrate holder for LPE film growth

Publications (2)

Publication Number Publication Date
JPS58111942U JPS58111942U (en) 1983-07-30
JPS6226459Y2 true JPS6226459Y2 (en) 1987-07-07

Family

ID=30021884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP923182U Granted JPS58111942U (en) 1982-01-26 1982-01-26 Substrate holder for LPE film growth

Country Status (1)

Country Link
JP (1) JPS58111942U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5540209U (en) * 1978-09-07 1980-03-14

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533641Y2 (en) * 1977-05-17 1980-08-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5540209U (en) * 1978-09-07 1980-03-14

Also Published As

Publication number Publication date
JPS58111942U (en) 1983-07-30

Similar Documents

Publication Publication Date Title
JPS6226459Y2 (en)
US4243472A (en) Method for liquid phase epitaxy multiple dipping of wafers for bubble film growth
CN113232176B (en) Seed crystal cutting device and method for casting single crystal high-temperature alloy in different crystal orientations
US4190683A (en) Method for forming a liquid phase epitaxial film on a wafer
US20150308011A1 (en) Methods for producing rectangular seeds for ingot growth
US3903841A (en) Vacuum holder in epitaxial growth apparatus
US4191365A (en) Horizontal/inclined substrate holder for liquid phase epitaxy
JPS5918199A (en) Liquid phase epitaxial growth of garnet film
CN214529316U (en) Liquid phase epitaxial substrate clamp for bismuth-doped rare earth iron garnet film growth
JPS5917899Y2 (en) wafer holder
JP2003292395A (en) Liquid phase-growing apparatus and liquid phase-growing method
JPH0971499A (en) Substrate holder for producing bismuth-substituted rare earth iron garnet
CA1163538A (en) Holder for liquid phase epitaxial growth
JPH05186291A (en) Liquid-phase epitaxial growth device
JPH06157189A (en) Single crystal growth device
JP3229559B2 (en) Method for producing iron garnet thick film by liquid phase epitaxial method
JP4253221B2 (en) Method for producing magnetic garnet single crystal film
JPS5776821A (en) Liquid phase epitaxial growing method
JPS63170915A (en) Liquid phase epitaxial crystal growth apparatus
JP2955965B2 (en) Protruding pallets for single crystal production
JPH08165193A (en) Jig for fixing substrate
JPS61151090A (en) Crystal growth of garnet film
JPH0569080B2 (en)
JPH0765767A (en) Sample mount for scanning electron microscope
JPS61174192A (en) Method for growing crystal