JPS62260158A - Light receiving member - Google Patents

Abstract

PURPOSE:To improve particularly moisture resistance, continuous repetitive use characteristic, electrical breakdown strength characteristic, use environment characteristic, durability, etc. by providing a surface protective layer constituted of a non-single crystalline material contg. boron nitride having 4-coordinate structure and boron nitride having 3-coordinate structure in combination. CONSTITUTION:This member consists of a base 101 and a light receiving layer having at least a photoconductive layer 102 constituted of an amorphous material essentially consisting of a silicon atom and contg. at least either of a hydrogen atom or halogen atom and the surface protective layer 103 on the base. The surface protective layer 103 is constituted of the non-single crystalline material contg. the boron nitride having the 4-coordinate structure and the boron nitride having the 3-coordinate structure in combination. The light receiving member which has always stable electrostatic chargeability, forms the image having excellent quality for a long period of time and is used for an electrophotographic sensitive body, etc. is thus obtd.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to a light-receiving member having a photoconductive layer made of amorphous silicon having silicon atoms as a matrix, and a surface protective layer having particularly excellent properties. The present invention relates to a light-receiving member suitable for an electrophotographic photoreceptor provided on a photoconductive layer.

(Description of Prior Art) Conventionally, as a light-receiving member used for electrophotographic photoreceptors, etc., in addition to being superior in the consistency of its photosensitivity region compared to other types of light-receiving members, Vickers For example, Japanese Patent Laid-Open No. 1983-197-
Amorphous materials (hereinafter referred to as 'a-5i (H, )") light-receiving members are attracting attention.

By the way, such a light-receiving member has a-5+ on a support.
01. X), the illumination ji? T! FJ is obi? i! It prevents charge from being injected into the photoconductive layer from the free surface side when subjected to treatment, and improves the moisture resistance, continuous repeated usage characteristics, electrical pressure resistance, usage environment characteristics, and durability of the leading Ti layer. It is known to provide a surface protective layer on the photoconductive layer in order to improve properties and obtain stable image quality over a long period of time.

As for the surface protective layer, which is required to efficiently exhibit each of the above-mentioned 11 functions, various non-single-crystalline materials having high resistance and sufficient light transmittance, that is, amorphous materials are used. Or/and polycrystalline materials have been proposed, and one of those proposals is an amorphous material containing boron nitride (hereinafter referred to as 'a-BJ).
It is known to use a thin film composed of (Refer to JP-A-59-12448 and JP-A-60-61760.) However, when the thin film composed of a-BN is used as a surface protective layer, the a-BN thin film is sometimes M. Deterioration due to various mechanical damages such as corona discharge during processing and contact with other parts, such as cleaning blades, may occur, making it difficult for the surface protective layer to perform the above-mentioned functions for a long period of time. There is a problem in that it becomes impossible to perform effectively. Also, the a-8Nl
Light-receiving members using films have insufficient charging ability, and when images are formed using such light-receiving members, deterioration of image quality may occur, such as ghosting on the image. There is also the problem that there is.

[Purpose of the invention]

The present invention solves the above-mentioned problems related to the surface protective layer of a light-receiving member used in electrophotographic photoreceptors, etc., and provides a light-emitting device having an improved surface protective layer that exhibits desired functions over a long period of time. The main purpose is to provide a receiving member.

Another object of the present invention is to provide a light-receiving member for use in electrophotographic photoreceptors and the like, which has a stable charging ability at all times and provides images of excellent quality over a long period of time.

[Structure of the invention]

The present inventors have conducted extensive research in order to solve the above-mentioned problems related to the surface protective layer of a light-receiving member used as an I/A photoreceptor for electrophotography, etc., and to achieve the above-mentioned object of the present invention. However, we have found that the structure of the BN thin film used as the surface protective layer is an important factor.

That is, two types of structures are known for the nitride borax sheave crystal: a hexagonal system in which the number of coordinations of the constituent elements is 3, and a cubic system in which the coordination number of the constituent elements is 4.

The present inventors have made a finding regarding how the structure of the boron nitride is 3U when a thin film composed of boron nitride is used as a surface preservation ZI layer of a light-receiving member used in an electrophotographic photoreceptor. 74 digits above, boron nitride of any structure cannot be used as a surface protective layer.
We found that boron nitride having a structure with a specific coordination number is suitable.

In other words, hexagonal crystals with a coordination number of 3 have the same structure as graphite, are very soft, and have a Mohs hardness of 2, so when used as a surface image of 3fflffl, corona discharge causes It has been found that it is susceptible to the impact of active substances such as generated ions, ozone, and electrons, and that it deteriorates due to various types of aSS damage, including contact with cleaning blades.

On the other hand, those with a cubic structure in which the coordination number of the constituent elements is 4 were found to have high hardness and sufficient resistance to corona discharge and mechanical impact. .

Therefore, from the standpoint of strength alone, it is preferable that the surface protective layer be made of an amorphous material containing four-coordinated four-structured boron nitride.

By the way, image formation using electrophotography consists of steps such as corona charging of the light-receiving member, image π light, development with toner, transfer to paper, and cleaning of the light-receiving member. In this case, the surface of the light-receiving member comes into contact with a member made of a different material. As a result, the quality of the image transferred onto paper is greatly influenced by the quality of the contact between the members used in each process and the surface of the light-receiving member. Considering this, if the surface of the light-receiving member is too hard, the blade will wear out quickly and cleaning defects will likely occur. Additionally, the lifespan of the blade is shortened, which increases the cost of maintaining the copier. vice versa,
If the surface of the light-receiving member is too soft, the surface of the light-receiving member will be
The light-receiving member is more likely to be scraped by the blade, resulting in more image defects, and the life of the light-receiving member is shortened, increasing the cost of maintaining the copying machine.

In this way, the surface hardness of the light-receiving member must be determined by taking into consideration the balance with the hardness of the various members that come into contact with it in various processes. When used as a surface protective layer of a light-receiving member, further improvements are required for each member of each process of image formation by electrophotography.

Based on these findings, the inventor conducted further research and found that when a non-single-crystal material in which boron nitride with a four-coordination structure and boron nitride with a three-coordination structure are mixed is used as a surface protective layer. It has been found that it is possible to obtain an electrophotographic light-receiving member having a surface hardness that is well balanced with the various members used in each process.

The present invention has been completed based on this knowledge, and its main points are a support, and on the support,
A photoreceptive member comprising a photoconductive layer made of an amorphous material based on silicon atoms and containing at least one of hydrogen atoms or halogen atoms, and a photoreceptor layer having at least a surface protective layer. In the light-receiving member, the surface protective layer is made of a non-single-crystalline material containing a mixture of boron nitride having a four-coordinate structure and boron nitride having a three-coordinate structure.

The light-receiving member provided by the present invention is characterized by its surface protective layer, and in addition to the support,
Other constituent layers including the photoconductive layer can be arbitrarily selected depending on the purpose of use. Therefore, below, typical examples of the layer structure of the photoreceptive member of the present invention will be those for electrophotography. Although the case will be explained, the light receiving member of the present invention is not limited thereto.

FIGS. 1(A) to 1(1) are diagrams schematically showing typical examples of the layer structure of the light-receiving member of the present invention for use in electrophotography.

In the example shown in FIG. 1 (8), the leading 'f'
The f1 layer 102 and the surface protection layer 103 are provided in this order, and the surface protection layer 103 has a free surface 107.

In the example shown in FIG. 1(B), a charge injection blocking layer 104, a photoconductive layer 102 and a surface protective layer 103 are provided on a support 101.
are arranged in this order.

In the example shown in FIG. 1(C), a long wavelength light absorption layer 105, a light guide T1 layer 102 and a surface protection layer 103 are provided on a support 101.
are arranged in this order.

In the first example shown in the DJ diagram, an adhesive layer 106, a photoconductive layer 102, and a surface protection layer 103 are provided in this order on a support.

In the example shown in FIG. 1(E), a charge injection blocking layer 104, an adhesion layer log, a light guiding Ti layer 102, and a surface protective layer 103 are provided in this order, and the example shown in FIG. 1(F) is a long one. Wavelength light absorption layer 105, adhesion layer 106, light guide? IT layer 102
and a surface protective layer 103 are provided in this order.

In the example shown in FIG. 1(G), a long wavelength light absorption layer 105. Charge injection blocking layer 104, photoconductive layer 102
and a surface protection layer +03 are provided in this order, and in the example, the order of the long wavelength light absorption layer +05 and the charge injection blocking layer 104 can be changed.

In the first example shown in FIG. 111, a long wavelength light absorbing F3+05, a charge injection blocking layer 104, a photoconductive layer 102, and a surface preservation layer 103 are provided on a support.

In the example shown in FIG. 1 (■), a charge injection blocking layer 104. A photoconductive layer 102, an intermediate layer 108, and a surface protective layer 103 are provided in this order.

The support 101 used in the light-receiving member of the present invention may be electrically conductive or electrically insulating. Examples of the electrically conductive support include NlCr, stainless steel, AQ, and Cr. , Mo, ^u, Nb, Ta, V, TI
.

Examples include metals such as Pt and Pb, and alloys thereof.

Examples of the electrically insulating support include films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, and polyamide, glass, ceramic, paper, and the like. It is preferable that at least one surface of these electrically insulating supports is conductively treated, and a light-receiving layer is provided on the conductively treated surface side.

For example, if it is glass, NiCr, 8Q,
Cr, MOlAu, Ir, Nb, Ta, V%Ti
, Pt, Pd, Ink, ITO (In203÷Sn)
By providing a thin film made of bamboo, conductivity is imparted,
Or, if it is a synthetic resin film such as polyester film, NiCr, AQ, 8g, Pb, Zn, Ni, A
A thin film of metal such as u, Cr, Mo, Ir, Nb, Ta, V, TQ, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the gold scraps. , imparts electrical conductivity to its surface. The shape of the support can be a plate, an endless belt, or a cylinder with a smooth or uneven surface, and its thickness is determined as appropriate to form a desired light-receiving member. When flexibility as a member is required, it can be made as thin as possible within a range that allows the function as a support to be fully exhibited. However, from the viewpoint of manufacturing and handling of the support, mechanical strength, etc., the thickness is usually set to 10μ or more.

In the light-receiving member of the invention shown in FIG. 1(B), the charge injection blocking layer 104 provided between the support lot and the photoconductive F1102 is a leading layer. This is a layer provided to prevent electrons from being injected from the support side into the photoconductive TFi layer 102 when the lt layer 102 undergoes charging treatment, and the charge injection blocking N104 is made of hydrogen or polycrystalline silicon. (Hereinafter, it will be referred to as 'po 1y-5i (H,X) J.

), or so-called non-single crystal silicon containing both (hereinafter referred to as 'Non-5i (H,X) J).
(In addition, what is commonly called microcrystalline silicon is a-5t
are categorized. ), atoms belonging to Group 1II of the Periodic Table (hereinafter referred to as "Group 1II atoms") or atoms belonging to Group ■ of the Periodic Table (hereinafter referred to as "Group ■ atoms") ).

The first ! contained in the charge injection blocking layer 104! ! Specifically, the group atoms include B (boron), 8Q (aluminum), Ga (gallium), In (indium), and Tl.
Although thallium) and the like can be used, particularly preferred are B and Ga. Also, specifically as a group V atom, ? (phosphorus), As (arsenic), Sb (antimony)
, Bi (bismuth), etc. can be used, but P and As are particularly preferred. And the first I+ group element contained in the charge injection blocking layer 104? Or the group II atoms are 3 to 5 x IO'aLomic ppm, preferably 50 to I x 1O'aLomic ppm,
It is desirable to set it as lXl0' to 5 x lo3atomicppIo.

Further, the amount of halogen atoms or hydrogen atoms contained in the charge injection blocking Jij1104 is lXl0' to 7x10'
atofflic ppm, especially poly-5i
(It,X), preferably lXIO
3-2 X 1G'atoa+ic ppm, a-
1 x 10' when composed of 5i (II, X)
It is desirable that the charge injection blocking layer 104 of the photoreceptive member of the present invention has a thickness of 0.03 to 15 μm, preferably 0.0 μm.
It is desirable that it be 4 to lθμ, most preferably 0.05 to 8μ.

In the light-receiving member of the wooden invention shown in FIG. N containing at least one
on-5t (If, By efficiently absorbing the light, the light absorption layer 105 has a function of significantly preventing interference phenomena caused by reflection of long wavelength light on the surface of the support 101. The amount of Ge atoms, the amount of Sn atoms, or the sum thereof contained in the long wavelength light absorption layer 105 is i ~ lo'at
offiic ppHl, preferably 1x lo'~
9 x 1G' atom tc ppm, more preferably 5 x 10' to 8 x 10' atomic p
It is desirable to set it to pm. Also, the long wavelength light absorption layer 105
The amount of hydrogen atoms or halogen atoms contained therein is preferably 1 x 103 to 3 x 10'atomic p
It is desirable to use poly-5i (G
e, Sn) (If, X) preferably I X 1
03~2 x 10'atomic ppm, a
-5I (Ge.

Sn) (ll, X) (f) preferably 1 xl
It is desirable to set G' to 6 xlO' atomic ppm.

Furthermore, the long wavelength light absorption layer 10 in the light receiving member 7 of the present invention
The layer thickness of No. 5 is from 0.05 to 25μ, preferably from 0.07 to
It is desirable that the thickness be 20μ, most preferably 0.1 to 15μ.

In the light-receiving member of the present invention shown in FIG. 1(D), the adhesive layer toe provided between the support 101 and the photoconductive layer 102 has a function of improving the adhesion between the support 101 and the photoconductive layer 102. Non-5i (It, X) (hereinafter referred to as '
Non-5i (0, C, N) (It, X) J
It is written as. ). And the adhesive layer 10
The amount of oxygen atoms, carbon atoms, and nitrogen atoms contained in 6,
Or the sum of at least two of them is 100 to
9 X 10'atomic ppm preferably 10
(It is desirable to set it as 1 to 4 x 10' atomic ppm, and the amount of hydrogen atoms or halogen atoms contained in the adhesion 5106 or the sum thereof is preferably 10 to 7 x 10' atomic ppm I11
and especially poly-5i(0,C,N) ()1. X
) in case of 10~2 x lo'atomic pp
m, a-5i (0,C,N) (11,X) if I X 10' ~ 7 X 10'aLomic
It is desirable to set it to ppm.

Incidentally, the charge injection blocking layer 104, the long wavelength light absorption layer 105, and the adhesion layer 106 in the light receiving member of the present invention can be used in combination, and the first example shows a typical example thereof. (E) to (H).

Furthermore, in the light-receiving member of the present invention, at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms is contained in the charge injection blocking layer 104 or the long wavelength light absorption layer 105, so that these layers have a It is also possible to have the function as an adhesion layer, and the long wavelength light absorption layer 105 may contain Group 1II atoms or Group V atoms, or the charge injection blocking layer 104 may contain germanium atoms or By containing tin atoms, it is possible to create a structure that has both of the functions of these layers.

By the way, the charge injection blocking layer 104, the long wavelength light absorption layer tOS, and the adhesion layer 106 in the light receiving member of the present invention are made of N.
Although it is composed of a material based on on-Si (II, I can give you an alternative.

One method is to raise the substrate temperature to a high temperature, specifically 400℃.
In this method, the temperature is set at ~450° C., and a film is deposited on the substrate by plasma CVD.

Another method is to first form an amorphous film on the surface of the substrate, that is, to form the film by plasma CVD on the substrate whose temperature is about 250°C, and then to remove the amorphous film for 70 minutes.
This is a method of converting into poly by two-ring treatment. The annealing process involves heating the substrate to 400-450°C for about 20 minutes, or applying laser light for about 20 minutes.
This is done by irradiating for a minute.

The light i? of the light receiving member of the present invention? it1mto2 is a-5
i(II.

X) or a-5i(Ge, Sn) (H,
It can contain at least one selected from Group 1II atoms, Group V atoms, and/or oxygen atoms, carbon atoms, and nitrogen atoms.

Specific examples of the halogen atoms (X) to be contained in the photoconductive layer 102 include fluorine, chlorine, bromine, and iodine, with fluorine, trous, and chlorine being particularly preferred. [The amount of hydrogen atoms (1()) or the amount of halogen atoms (Xl, or the sum of the amounts of hydrogen atoms and halogen atoms (11÷X
) is preferably 1 to 40 at OmIC'6, more preferably 5 to 30 atOmIC'6. Furthermore, the purpose of containing Group 1 II atoms or Group V atoms in the photoconductive layer 102 is to The objective is to control the conductivity of 102. As such Group 1 II atoms and Group Ⅰ atoms, atoms similar to those contained in the charge injection blocking layer 104 described above can be used;
When it is contained in the photoconductive layer 102, it is contained with a substance having the opposite polarity to that contained in the charge injection blocking layer 104, or a substance having the same polarity as that contained in the charge injection blocking layer 104. It can be contained in an amount much smaller than that contained in 713104.

The amount of Group 1 II atoms or Group Ⅰ atoms contained in the photoconductive layer 102 is preferably I x 10-'~! ×1
0' atomic ppm, more preferably 5XlO
-2 to 5XIc" atoI!tic ppm, optimally 1 x 10-' to 2 x 102)02ato
It is desirable to set it to ppIll.

Moreover, the purpose of containing at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in the photoconductive layer 102 is to conduct light. In addition to increasing the dark resistance of the It layer 102, the leading? liF! The objective is to improve the film quality of J102. The amount of such atoms contained in the photoconductive layer 102 is preferably lX10-' to 50ato
mic%, more preferably 2xlO-'~40atom
ic! , optimally 3 X 10-3 to 30 atoms
It is desirable to set it to c%.

Furthermore, germanium atoms (G
e) or tin atoms (Sn), the purpose of containing such atoms is to improve the sensitivity to long wavelength light such as laser light, and in this case, the photoconductive The number of atoms contained in the layer 102 is preferably 1 to 9.
Preferably, the amount is 5 x lo'atomic ppm.

Furthermore, in the light-receiving member of the present invention, the layer thickness of the light-guiding Il layer is one of the important factors for efficiently achieving the object of the present invention, and is necessary to impart desired characteristics to the light-receiving member. Therefore, it is necessary to pay sufficient attention when designing the light-receiving member, and the thickness is usually 1 to 100μ, but preferably 3 to 100μ.
80μ, optimally 5 to 50μ.

A characteristic feature of the light-receiving member of the present invention is that the surface protection [103] is located on the photoconductive Fl 102 described above and has a free surface 107. The surface image MU layer 103 improves various properties required of a light-receiving member, such as moisture resistance, continuous repeated use characteristics, electrical pressure resistance, use environment characteristics, and durability, and also improves the light-receiving layer. It functions to prevent charges from being injected into the photoconductive layer 102 from the free surface 107 side when the photoconductive layer 102 is subjected to charging treatment.

The surface protective layer 103 of the light-receiving member of the present invention has 4
A non-single crystal material containing a mixture of boron nitride with a coordination structure and boron nitride with a tricoordination structure [hereinafter referred to as 'Non-BN
It is written as j. ], i.e., amorphous material [hereinafter, '
It is written as a-[IN]. ] or polycrystalline material [hereinafter referred to as 'poly-BN'. ] or a mixture of the two, and may further contain at least one of a nitrogen atom or a halogen atom [hereinafter referred to as 'Non-38(11,X)4' . ] Regarding the proportion of each atom forming 4-3 of the surface image 1111o:+, the composition ratio of Non-BN (H,
When expressed as lN+-Il) +-y(11,X)y, it is desirable that the following conditions be satisfied.

For X: 0.1≦X≦0.9, preferably 0.2≦X≦O, a optimally 0.3≦X≦0.7 For y: 0.4≦y≦40, preferably 0゜5≦y≦30, optimally l≦y≦20 In the light-receiving member of the present invention, the layer thickness of the surface protective layer +03 is also one of the important factors for efficiently achieving the object of the present invention. Although it is determined as appropriate depending on the desired purpose, it may be determined based on mutual and organic relationships depending on the number of constituent atoms contained in the surface protective layer or the characteristics required for the surface image AK KJ. It is necessary to decide. Furthermore, it is also necessary to consider economic efficiency, including productivity and mass production.

For these reasons, the surface protective layer 1 of the light-receiving member of the present invention
The layer thickness of 03 is preferably 0.003 to 30μ, more preferably 0.004 to 20μ, optimally o, oos to 1
It is 0μ.

Furthermore, in the light-receiving member of the present invention, an intermediate layer 108 may be formed between the above-mentioned surface protective layer 103 and photoconductive layer 102, and the intermediate layer 1i3108 is made of a carbon atom-containing layer a-5i ( II, X) or poly-5i (
II, X)! The amount of carbon atoms contained in the intermediate layer 108 is preferably 20 to 90 atoms.
mic%, more preferably 30-85 atomic%,
The optimum content is preferably 40 to 80 atomic%. Further, the hydrogen atoms contained in the intermediate layer 1'08 (
+1), the amount of halogen atoms (X), and hydrogen atoms +
The amount of halogen atoms (H◆X) is preferably 1 to 70a
tomic%, more preferably 2-65atomic%
, is optimally desirably s ~ 60 atomic%, and the layer thickness of the intermediate layer 108 is preferably 0.0 atomic%.
03-30μm5 more preferably 0.004-20μm
1. Optimally, it is desirable to set it to o, oos to lOμm.

Next, a method for forming the constituent layers of the light-receiving member of the present invention will be explained.

The amorphous material constituting the light-receiving member of the present invention can be prepared using a glow discharge method (alternating current CVD such as low frequency CVD, high frequency CVD or microwave CVD, or direct current discharge CVD, etc.), sputtering method, It can be formed by various thin film deposition methods such as a vacuum evaporation method, an ion blating method, a photo CVD method, and a thermal CVD method. These thin film deposition methods vary depending on manufacturing conditions, equipment capital investment,
The method is selected and adopted as appropriate depending on factors such as the production scale and the desired characteristics of the light-receiving member to be produced, but it is relatively easy to control the conditions for producing a light-receiving member with the desired characteristics. However, since halogen atoms and hydrogen atoms can be easily introduced together with silicon atoms,
Glow discharge method or sputtering method is suitable. Further, the glow discharge method and the sputtering method may be used together in the same system.

For example, in order to form a surface protective layer composed of Non-BN (H,
A raw material gas for B supply that can supply B, a raw material gas for N supply that can supply nitrogen atoms (N), and a raw material gas for introducing hydrogen atoms (I) or/and halogen atoms (X) as necessary. A raw material gas for non-BN is introduced into a deposition chamber whose inside can be made to have a reduced pressure, and a glow discharge is generated in the deposition chamber.
A layer consisting of (H,X) is formed.

As the raw material gas for B supply, BxHt, B2O
2゜B,l(,,8B1111.Ba1112.BFz
, 8C11 and the like, which are in a gaseous state or can be gasified.

In addition, as the raw material gas for the N supply, I7, N11
．． ,NF,,NF,CI,NFCl2,NC1,,N2
F2. N2F4, NH2Cl.

Examples include compounds in a gaseous state or which can be gasified, such as NIIF, NIl, F, and the like.

In addition, in order to form a Non-BN (II,
Either the raw material gas for N supply is introduced into the deposition chamber together with an inert gas such as A to form a plasma atmosphere, and the BN target is sputtered, or the raw material gas for N supply is introduced into the deposition chamber using the B target as a target. It is formed by introducing a large amount of plasma to form a plasma atmosphere and sputtering it with the B target.

In addition, a-5i (It,
In order to form a layer composed of 4114 X), basically, along with a raw material gas for supplying Si that can supply silicon atoms (Sil), hydrogen atoms (11) for introduction or/and halogen atoms (X) are used. A raw material gas for introduction is introduced into a deposition chamber whose interior can be reduced in pressure, a glow discharge is generated in the deposition chamber, and a-
5i (II, X) is formed.

As the gas for supplying Si, 5illa, 5i2)
16.5i3116, 5i4II+o, etc., and gaseous silicon hydride (silanes) such as Si:I4, Si , 11. is preferred.

Further, as the raw material gas for introducing halogen atoms, there are many halogen compounds, such as halogen gas,
Gaseous or gasified halogen compounds, such as halides, interhalogen compounds, and halogen-substituted silane conductors, are preferred. Specifically, fluorine, chlorine, bromine,
Iodine halogen gas, 8rF, CIF, CIF, 8
“F6, BrF3, IF,, ICI.

Interhalogen compounds such as IBr, and 5IF4.5I2
Examples include silicon halides such as Fa, 5tC14, and Sl[Hr4.

When using a gaseous silicon halide or a gasified silicon halide as described above, a-
This is particularly effective since a layer composed of 5i can be formed.

Further, as the raw material gas for supplying hydrogen atoms, hydrogen gas, IIF, llCl, ! Halides such as IBr, Hr, 5illa, 5izHa, 5isHa
, 5i4H+o, or 5i112
F2.5i11, 12.5ilL2CI2.5iHC1
3, S i II 28 r 2 , S i If
Gaseous or gasified materials such as halogen-substituted silicon hydride such as B r s can be used, and when these raw material gases are used, it is extremely effective in terms of controlling electrical or photoelectric characteristics. The hydrogen atom that is effective (
Since the content of 11) can be easily controlled,
It is valid.

When the hydrogen halide or the halogen-substituted silicon hydride is used, hydrogen atoms (H) are also introduced at the same time as the halogen atoms, which is particularly effective.

In order to form a group consisting of a-5t(II, A silicon compound gas containing halogen atoms may be introduced into the deposition chamber to form a plasma 7 surrounding the gas.

In addition, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, such as II or the above-mentioned silane gases, is introduced into the deposition chamber for sputtering to form a plasma of the gas; an surrounding atmosphere. Just do it.

For example, in the case of the reactive sputtering method, an SI tube is used to introduce a gas for introducing halogen atoms, H, and gases, including inert gases such as He and Ar as necessary, into the deposition chamber. to form a plasma atmosphere, and
a-5i()1. on the support by sputtering a target. A layer consisting of X) is formed.

a-5iGe (II, X) by glow discharge method
To form a layer consisting of silicon atoms (Si)
A raw material gas for co-supply of Sr (co-supply), a raw material gas for Ge supply that can supply germanium atoms (Ge), and a hydrogen atom that supplies hydrogen atoms (11) and/or halogen atoms (X). (11) Or/and a raw material gas for supplying halogen atoms (X) is introduced at a desired gas pressure into a hanging deposition chamber whose interior is reduced in pressure, a glow discharge is generated within the deposition chamber, and the material is placed in a predetermined position in advance. A color composed of a-5iGe (HlX) is formed on a given support surface.

Substances that can be used as the raw material gas for supplying Si, the atomic gas for supplying halogen atoms, and the raw material gas for supplying hydrogen atoms include those used when forming the layer composed of the above-mentioned a-5i(11,X). What you have is used as is.

In addition, as the material gas for supplying Ge, G e Il 4, Gezlla, Ge5Ha
, GeaH+a, Ge5ll+*, Ge5ll+*,
Ge7111a, GeaHras GeolI2o
Germanium hydride in a gaseous state or in a gasified form can be used. In particular, ease of handling during layer creation work,
From the point of view of good Ge supply efficiency, Ge tI 4, c
e2It, t and G e 3II are preferred.

a-5iGe (Il,X) by sputtering method
To form a layer composed of , a target made of silicon and a target made of germanium, or a target made of silicon and germanium, are used and sputtered in a desired gas atmosphere. Do it by doing this.

a-5iGe (II
, This can be carried out by heating and vaporizing by a heating method, an electron beam method (E, B, method), etc., and causing the flying evaporated material to pass through a desired gas plasma atmosphere.

In both the sputtering method and the ion blasting method, in order to contain halogen atoms in the layer to be formed, a gas of the above-mentioned halide or a silicon compound containing halogen atoms is introduced into the deposition chamber, and the gas is It is sufficient to form a plasma atmosphere of Plasma of these gases may be introduced into the deposition chamber to form an atmosphere. Furthermore, as the raw material gas for supplying halogen atoms, the above-mentioned halides or silicon compounds containing halogen are effective examples. But in addition, )IF, llCl
, 1IBr, )II, etc., 5j
lhFi, 5i11. I2.5iH2CIz, 5ill
(: I3, S+IhBr2.5illOr, etc., halogen is replaced with silicon hydride, and G e If F 3 ,
G e II 2 F 2, G e It , F
, G e II CI3, Ge1l, C1,, Ge)
13CI, Ge1lBr,, G e II 2
B r 2 , G e II 3 B r, G
etth 1, G e It 2) x, G e 831
Hydrogenated halogenated germanium such as GeF4, G
eCl4, GeBr4. Ga1a, GeF2, G
Gaseous or gasified materials such as germanium halides such as eCIx, Gear, Ge12, etc. can also be used as effective starting materials.

A photoreceptive layer made of amorphous silicon containing tin atoms (hereinafter referred to as 'a-5iSn(It,X)4) is formed using a glow discharge method, a sputtering method, or an ion blating method. In forming the layer composed of a-5iGe (II,
This is carried out by using it in place of the starting material for supplying Sn) and controlling its amount in the layer to be formed.

Substances that serve as raw material gas for supplying the tin atoms (Sn), tin hydride (Snl14), SnF, 5n
F4.5nC1x, 5nCIa, 5n8r2. S
nBr4. Gaseous or gasifiable tin halides such as SnI2 and Sna can be used, and when tin halides are used, a-5t containing halogen atoms can be used on a predetermined support. This is particularly effective because the diagnosis can be made by forming a layer consisting of two or more layers. Among these, 5nC14 is preferable from the viewpoint of ease of handling during layer formation work, good Sn supply efficiency, etc.

When using 5nCL as a starting material for supplying tin atoms (Sn), in order to gasify it, solid 5nCL is required.
It is desirable to heat the IIC 14 and to blow an inert gas such as Ar or lee into it for bubbling using the inert gas. Introduce.

Using the glow discharge method, sputtering method, or ion blating method, a-5i (11,
In order to form a layer composed of an amorphous material containing a group II atom or a group V atom, nitrogen atom, oxygen atom or carbon atom, during the formation of a-5i (If, , a starting material for introducing a Group 1 II atom or a Group V atom, a starting material for introducing an oxygen atom, a starting material for introducing a nitrogen atom,
Alternatively, the starting material for introducing carbon atoms may be
ill,

For example, in order to form a layer composed of a-5i (II, X) containing atoms (0, C, N) using the glow discharge method, the above-mentioned a-5i (II, When forming the structure, the starting material for introducing atoms (0, C, N) is used together with the starting material for forming a-Si (Il, This is done by controlling their inclusion.

As a starting material for such introduction of atoms (0, C, N), most of the gaseous substances or substances that can be gasified have at least atoms (0, C, N) as constituent atoms. Things can be used.

Specifically, as starting materials for introducing oxygen atoms (0), for example, oxygen (0°), ozone (03), -nitrogen oxide (N
O), -nitrogen dioxide (N, 0), nitrogen sesquioxide Ohoko), nitrogen tetroxide (N204), nitrogen pentoxide (N20
s), nitrogen trioxide (NO3), disiloxane (lI3siO5iH3), trisiloxane: / (H3SiO5iH20Sil+3) whose constituent atoms are nitrogen trioxide (NO3), silicon atom (Si), oxygen atom (0), and hydrogen atom (H).
Examples of starting materials for introducing carbon atoms (C) include lower siloxanes such as methane (C++, )
, ethane ([:2H1l), propane (CJa), n-
Butane (n-CJ+o), pentane (C8I112)
Saturated hydrocarbons having 1 to 5 carbon atoms such as ethylene (C2)1
4), propylene ((3Ha), butene-1 (C4H6
), butene-2 (C41+a), isobutylene (C<l
1a), ethylene hydrocarbons having 2 to 5 carbon atoms such as pentene (Csll+o), acetylene (1:dh), methylacetylene (C31+4), butyne (C4Ha), etc.
Examples include acetylenic hydrocarbons having 2 to 4 carbon atoms, and examples of starting materials for introducing nitrogen atoms (N) include nitrogen (
N2), ammonia (NH3), hydrazine (HJN)
I2), hydrogen azide (HN3), ammonium azide (
N)14NS), nitrogen trifluoride (F3N), and nitrogen tetrafluoride CFJN).

For example, when a glow discharge method is used to form a layer or layer region containing oxygen atoms, a material for introducing oxygen atoms is added to a starting material selected as desired from among the starting materials for forming the photoreceptor layer described above. Starting materials are added. As such a starting material for introducing oxygen atoms, almost any gaseous substance or substance that can be gasified can be used as long as it has at least an oxygen atom as a constituent atom.

For example, a source gas containing silicon atoms (Si), a source gas containing oxygen atoms (0), and hydrogen atoms (11) or/and halogen atoms (×
) as constituent atoms at a desired mixing ratio, or alternatively, a raw material gas containing silicon atoms (St) as constituent atoms and oxygen atoms (0) and hydrogen atoms (formerly as constituent atoms) are used. A raw material gas containing atoms is also mixed at a desired mixing ratio, or a raw material gas containing silicon atoms (Si) and oxygen atoms (
0) and hydrogen atoms (1()) can be mixed and used.

Also, separately, silicon atoms (Si) and hydrogen atoms (11)
You may mix and use the raw material gas which has an oxygen atom (0) as a constituent atom with the raw material gas which has a constituent atom.

Specifically, for example, oxygen (02), ozone (0,), -
Nitrogen oxide (NO), nitrogen dioxide (NOz), -nitrogen dioxide (N20), nitrogen sesquioxide (Naps), nitrogen tetroxide (N20<), nitrogen sesquioxide (N20B), nitrogen trioxide (NO3), silicon atoms ( Si) and oxygen atom (0)
For example, lower siloxanes such as disiloxane (H3SiO5i)I3) and trisiloxane (I(sslO5ll+20sil13)), which have a hydrogen atom (11) and a hydrogen atom (11), can be mentioned.

To form a layer or layer region containing oxygen atoms by sputtering, a single crystal or Si wafer, a 5i02 wafer, or a wafer containing a mixture of Si and SiO□ is used as a target. Various gases; sputtering may be performed in an ambient atmosphere.

For example, if a Si wafer is used as a target,
A raw material gas for introducing oxygen atoms and hydrogen atoms and/or halogen atoms as necessary is diluted with a diluent gas as necessary, and introduced into a deposition chamber for sputtering to generate a gas plasma of these gases. What is necessary is just to form and sputter the said Si wafer.

Alternatively, by using Si and 5i02 as separate targets or using a single mixed target of Si and 5i02, at least hydrogen atoms ( I+) or/
It can be formed by sputtering in a gas atmosphere containing halogen atoms (X) as constituent atoms. As the raw material gas for introducing oxygen atoms, the raw material gas for introducing oxygen atoms among the raw material gases shown in the example of glow discharge described above can be used as an effective gas also in the case of sputtering.

For example, in order to form a layer composed of amorphous silicon containing carbon atoms by the glow discharge method, a raw material gas containing silicon atoms (Si) and a raw material gas containing carbon atoms (C) are used. Gas and 1, if necessary, a raw material gas whose constituent atoms are hydrogen atoms (11) and/or halogen atoms (X) are mixed at a desired mixing ratio, or silicon atoms (Si) are used. A raw material gas containing atoms and a raw material gas containing carbon atoms (C) and hydrogen atoms (H) are also mixed at a desired mixing ratio, or silicon atoms (St) are used. The raw material gas as constituent atoms, silicon atoms (Si), carbon atoms (
A raw material gas containing C) and hydrogen atoms (former atoms) is mixed, or a raw material gas containing silicon atoms and hydrogen atoms is used.

Si is effectively used as such raw material gas.
5il14.5iJa, 5iJ with and H as constituent atoms
Silicon hydride gas such as silanes such as aSi4111o, saturated hydrocarbons containing C and H as constituent atoms, e.g. saturated hydrocarbons having 1 to 4 carbon atoms, ethylene hydrocarbons having 2 to 4 carbon atoms, 2 carbon atoms -3 acetylenic hydrocarbons and the like.

Specifically, the colored hydrocarbons include, for example, methane (C
H4), ethane (czua), propane (csua),
n-butane (rho (:4H,.), pentane (C1H1
2) As the ethylene hydrocarbon, ethylene (C2
H8), propylene (C311a), butylene: / -1
(C4116), butene-2 (C411aJ, inbutylene (C-Ha), pentene (csllto)) Acetylene hydrocarbons include acetylene (c2o2), methylene 7-cetylene (C3114), butylene (C4116)
) etc.

As a raw material gas containing Si, C, and 11 as constituent atoms,
Examples include alkyl silicides such as 5i(C1h)n and Si(C2H5)a. In addition to these raw material gases, 112 can of course be used as the raw material gas for H introduction.

To form a layer composed of a-5iG (Il,
This is carried out by sputtering a wafer mixed with these materials in a desired gas atmosphere.

For example, when using an SI wafer as a target, the raw material gas for introducing carbon atoms, hydrogen atoms, and/or halogen atoms may be Ar, II, or Ill as necessary.
The gas may be diluted with a diluent gas such as E and introduced into a deposition chamber for sputtering to form a gas plasma of these gases and sputtered onto the St wafer 8.

In addition, if SL and C are used as separate targets, or if a single target containing Si and C is used, the raw material for introducing hydrogen atoms and/or halogen atoms is used as the sputtering gas. The gas may be diluted with a diluent gas as needed, introduced into a deposition chamber for sputtering, and sputtered by forming gas plasma.

As the raw material gas for introducing each atom used in the sputtering method, the raw material gas used in the glow discharge method described above can be used as is.

For example, when a glow discharge method is used to form a photoreceptor layer region containing nitrogen atoms, a starting material for introducing nitrogen atoms is added to a starting material selected as desired from among the starting materials for forming the photoreceptive layer described above. Add substance. As the starting material for introducing nitrogen atoms, almost any gaseous substance or gasifiable substance having at least nitrogen atoms as a constituent atom can be used.

For example, a raw material gas containing silicon atoms (St), a raw material gas containing nitrogen atoms (N), and hydrogen atoms (11) or/and halogen atoms (X
) with a raw material gas having constituent atoms at a desired mixing ratio, or a raw material gas having silicon atoms (Sf) with nitrogen atoms (N) and hydrogen atoms (H).
The constituent atoms and the raw material gas can also be used by mixing them at a desired mixing ratio.

Also, separately, silicon atoms (Si) and hydrogen atoms (11)
You may mix and use the raw material gas which has a nitrogen atom (N) as a constituent atom with the raw material gas which has a nitrogen atom (N) as a constituent atom.

A starting material that is effectively used as a raw material gas for introducing nitrogen element (N) used when forming a nitrogen atom-containing layer or layer region has N as a constituent atom or a mixture of N and H.
For example, nitrogen (N2), ammonia (
Ni+, ), hydrazine (lI2NNII2) hydrogen azide (lIN3), ammonium azide (NII4Ns
), and nitrogen compounds such as boron nitrides and azides. In addition, halogenated nitrogen compounds such as nitrogen trifluoride CF3N) and nitrogen tetrafluoride CF,N) can be mentioned, since in addition to introducing nitrogen atoms, halogen atoms can also be introduced.

To form a nitrogen atom-containing layer or pjJ region by sputtering method: 1. @Crystalline or Si wafers, polycrystalline Si wafers, Si, N4 wafers, or Si (Si) wafers containing a mixture of Si and N4 are targeted, and these are sputtered in various gas atmospheres. It can be done by.

For example, if a Si wafer is used as a target,
A raw material gas for introducing nitrogen atoms and hydrogen atoms or/and halogen atoms as necessary is diluted with a diluent gas as necessary and introduced into a deposition chamber for sputtering. The Si wafer may be sputtered by forming plasma.

Alternatively, by using Si and Si3N4 as separate targets or by using a single mixed target of Si and Si3N4, the dilution gas as a sputtering gas can be used in an atmosphere or at least hydrogen atoms (11
) or/and by sputtering in a gas atmosphere containing halogen atoms (X) as constituent atoms. As the raw material gas for introducing oxygen atoms, the raw material gas for introducing nitrogen atoms among the raw material gases shown in the glow discharge example described above can be used as an effective gas also in the case of sputtering.

In addition, using the glow discharge method, sputtering method, or ion blating method, ! group atoms or group V
When forming a layer composed of a-5i (II, This is accomplished by controlling the amount of these starting materials into the layer being formed.

Specifically, as a starting material for introducing a first H group atom, for introducing a boron atom, B2)1. , B 4 II I O
, B s II *, Ba1l++ −BaH+o,
Boron hydride such as Ba1l+2.881114, BF3
, BCIs, and boron halides such as BBr3. In addition, AQ C1s, GaC15, Ga (
CI+3) 2, InC15, TQCla, etc. can also be mentioned.

Specifically, as a starting material for introducing a group V atom, for introducing a phosphorus atom, hydrogenated phosphorus PH41 such as PH3, P2) 16, etc.
,PF3,PF,,Pct,,PCl5,pHr,,P
Br3. Examples include halogenated phosphorus such as Pr3. In addition, A s 11, ^sFs, ^sc1. , AsB
r3, ^sFs, 5bHs, SbF3, SbF,, 5b
C1s, 5bC1s, BiI3, BjC13, Bier
s and the like can also be mentioned as effective starting materials for introducing Group I atoms.

As described above, the light-receiving layer of the light-receiving member of the present invention is formed using a glow discharge method, a sputtering method, or the like. ! The content of group atoms or group V atoms, oxygen atoms, carbon atoms, nitrogen atoms, hydrogen atoms and/or halogen atoms can be controlled by controlling the respective contents of each atom-supplying starting material gas flowing into the deposition chamber. This is done by controlling the flow rate or the gas flow rate ratio of each starting material for supplying atoms.

In addition, conditions such as support temperature, gas in the deposition chamber, discharge power, etc. when forming each constituent layer such as the leading 11 layer and the surface protective layer are ffi in order to obtain a light-receiving member having desired characteristics.
This is an important factor and should be selected as appropriate, taking into consideration the function of the layer to be formed.

Furthermore, these layer formation conditions may differ depending on the type and amount of each of the atoms mentioned above to be contained in each constituent layer such as the photoconductive layer and the surface protective layer. It is also necessary to take this decision into consideration.

Specifically, No. 2 has a mixture of 4-coordinate structure and 3-coordinate structure.
A surface protective layer made of n-BN (N,
3,56M112) When forming by Blaz 7CVD method, the gas pressure in the deposition chamber is usually 10-2 to 1 OTorr.
more preferably 5 X 10' to 2 Tor
r, optimally 0.1 to I Torr. In addition, the support temperature is usually So~700°C, but especially for non-
BN (N, 50 to 400°C for X1 layer,
poly-[IN(11, 200 for X1 layer)
~700°C. Furthermore, the discharge power is usually 0. O1~5
W/Cl112, more preferably 0.02-2W/cI
112, and furthermore, the gas ratio of the B supply raw material gas, the N supply raw material gas, and the ^r gas is such that B/N is 1.
/100 to 5/1, more preferably i/80 to 4/1, and Ar/B+N to 1/1 to 0.

In addition, Non-B with a mixture of 4-coordinate structure and 3-coordinate structure
Microwave (2,4
5GIIZ) When forming by plasma CVD method, the gas pressure in the deposition chamber is usually 10-4 to 2 Torr, more preferably 5 x 10-' to 1. OTorr, optimally 5 x 10-' to 0.7 Torr, and discharge power usually 0.1 to 50 W/cm'', more preferably 0.2
~30W/c1112. The support temperature and the gas flow rate ratio of each source gas are the same as in the case of the high frequency plasma CVD method described above.

Furthermore, Non-B with a mixture of 4-coordinate structure and 3-coordinate structure
When forming a surface protective layer made of N (11,X) by sputtering, the gas pressure in the deposition chamber is usually 10"
'~I Torr, more preferably 5 X 1G-'
~0.7 Torr, and discharge power is 0.01~IO
W/cm2, more preferably 0.05-8W7cm
Set it to 2. The support temperature is the same as in the case of the high frequency plasma CVD method described above.

In addition, when forming a layer consisting of a-5i (H, Preferably it is 50 to 250°C.

The gas pressure inside the deposition chamber is normally 0. O1 to I Torr, particularly preferably 0.1 to 0.5 Torr.

The discharge power is usually from 0.00 to 50 W/cm, but more preferably from 0.01 to 30 W/am.
shall be. Particularly preferably 0.01-20W/cm
2.

When forming an a-5iGe (11, Body temperature, usually 50-35
The temperature is preferably 0°C, more preferably 50 to 300°C, particularly preferably 100 to 300°C. The gas pressure inside the deposition chamber is normally 0. O1 to 5 Torr,
Preferably it is 0.001 to 3 Torr, particularly preferably 0.01 to ITorr. Further, the discharge power is usually set to o, oos to sow/cm', preferably 0.01 to 30 W/Cff12. Particularly preferably 0. O1 to 20 W/cm2.

However, the specific conditions for layer formation, such as support temperature, discharge power, and gas pressure in the deposition chamber, are usually difficult to determine individually.

Therefore, in order to form an amorphous material layer with desired characteristics,
It is desirable to determine optimal conditions for layer formation based on mutual and organic relationships.

Next, a method for manufacturing a photoconductive member formed by a glow discharge decomposition method will be described.

FIG. 2 shows a manufacturing process for a light-receiving member for electrophotography using the glow discharge decomposition method.

In the gas cylinders 202, 203, 204, 205, 206 in the figure, raw material gases for forming the respective layers of the present invention are sealed, for example,
202 is 5i11. Gas (purity 99.999%) cylinder, 203 is B, II 6 gas (11 diluted with
Purity 99.999%, hereinafter B 2 II 6 / II
t) cylinder, 204 is NO gas (purity 99.5
%) cylinder, 205 diluted with lle B, II
, gas (purity 99.999%, hereinafter 82) e/lie
) cylinder, 206 is NO, gas (purity 99.99
9%) It is a cylinder.

To allow these gases to flow into the reaction chamber 201, make sure that the valves of the gas cylinders 202 to 206 and the leak valve 235 are closed, and also make sure that the inflow valves 2) and 2) are closed.
6. Outflow valve 2) 7~22) 1 Auxiliary valve 232~2
Make sure that valve 33 is open, and then open main valve 2.
Open reaction u201.34. When the reading on the vacuum gauge 236 reaches approximately 5 x 10-6 Torr after exhausting the inside of the gas pipe, the auxiliary valves 232-233 and the outflow valves 2) and 7-22) are closed.

1 when forming the first housing on the base cylinder 237
For example, 5il14 gas from 202 to the gas cylinder,
Gas cylinder, B2 from 203) 1a/l (2 gas, to gas cylinder, NO gas from 204, valves 222, 223
．． 224 and outlet pressure gauges 227 , 228 , 2
Adjust the pressure of 29 to I kg/cm2 and inlet valve 2)
2) 3.2) Gradually open 4 to allow the flow into the mass flow controllers 207, 208 and 209. Subsequently, outflow valve 2) 7.2) 11.2) 9, auxiliary valve 2
32 is gradually opened to allow the respective gases to flow into the reaction chamber.

At this time, adjust the outflow valve 2)7.2+8.2)9 so that the ratio of the 5il14 gas flow rate, BJa/112 gas flow rate, and NO gas flow rate becomes the desired value, and also adjust the pressure inside the reaction chamber to the desired value. While checking the reading on the vacuum gauge 236, adjust the opening of the main valve 234 so that the value is correct. Then, the temperature of the base cylinder 237 is raised to 50°C by the heating heater 238.
After ensuring that the temperature is set at ~350 t, power supply 240 is set to the desired power to cause a glow emission in the reaction H2or to form the first layer on the substrate cylinder.

When the first layer contains halogen atoms, a gas such as SiF, for example, is further added to the above gas to form the reaction chamber 201.
send to.

Depending on the selection of gas species when forming each layer, the layer formation speed can be further increased. For example, instead of SiH gas, 5i2)1. If layer formation is performed using a gas, the productivity can be increased several times.

To form a second store on the first layer created as described above, close the outflow valves 2) 7-22), open the auxiliary valves 232-233, and fully open the main valve 234. After once evacuating the system to a high vacuum, B 2 H6 / u e
This is accomplished by flowing gas, NH, and gas into the reaction chamber 101 at a desired flow rate ratio to generate glow discharge according to desired conditions.

When changing the amount of hydrogen atoms contained in the second layer, for example, H gas is added to the above gas, and 112
It can be controlled as desired by arbitrarily changing the flow rate of gas introduced into the reaction chamber +01 as desired.

When the second layer contains halogen atoms, a gas such as NF, for example, is further added to the above gas and the mixture is sent into the reaction chamber 101.

It goes without saying that all outflows other than the gases required when forming each layer are closed, and when forming each layer, the gas used to form the previous layer is inside the reaction chamber 101 and the outflow valve 2). 7-22) to the reaction chamber lO1, the outflow valve 2) 7-22
), open the auxiliary valves 232 to 233, fully open the main valve 234, and temporarily evacuate the system to a high vacuum, as necessary.

During layer formation, the base cylinder 237 is constantly rotated by a motor 239 at a desired speed to ensure uniform layer formation.

〔Example〕

EXAMPLES Hereinafter, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited thereto.

<Example 1> Using the manufacturing bag M shown in FIG. 2, an electrophotographic light-receiving member was formed on an aluminum cylinder which had been mirror-finished according to the preparation conditions shown in Table 1.

Separately, using the same type of apparatus as shown in FIG. 2, an aluminum substrate and a single crystal Si wafer were placed in a sample holder on a cylinder, and a wafer with only the surface layer of the same specifications was prepared separately.

For the light-receiving member (hereinafter referred to as drum), an electrophotographic device was set and the initial band was measured under various conditions. i! Check the electrophotographic characteristics such as power, residual potential, ghost, etc.
In addition, after 1.5 million sheets of actual machine durability, a decrease in charging ability, surface abrasion, increase in image defects, etc. were investigated.

Furthermore, the cleaner blade was intentionally replaced with one whose rubbing edge was worn out, and the cleaning performance was compared based on the degree of ground force blur that occurs on a solid white image. Furthermore, image deletion on the drum was also evaluated at 35° C. and 85% high temperature in a high temperature atmosphere.

In addition, the dielectric strength was investigated by applying a DC high voltage to the drum. Furthermore, the scratch resistance was examined by applying a constant load to a needle with a spherical tip and making scratches on the drum surface. The above evaluation results are shown in Table 752.

As seen in Table 2, good results were obtained for the main items. In particular, image defects, image smearing, and re-leaning (
Superiority was recognized in terms of soil strength (degree of yellowing).

Only the surface layer (hereinafter referred to as sample) deposited on an aluminum substrate and a single crystal Si wafer was subjected to EXAF, respectively.
When the coordination number was investigated by S and IR, it was found that it was a mixture of 4-coordination and 3-coordination. In addition, for the Si wafer sample for which IR measurement has been completed, scratch the substrate with a diamond needle in the shape of a hole/mm, and then use adhesive tape! i! An IJm test was conducted to determine the magnitude of residual stress.

<Example 2> A drum and a sample were produced in the same manner as in Example 1 under the production conditions shown in Table 3 by adding 112 gas to the raw material gas for the surface layer, and the same evaluation was performed.

The results are shown in Table 4.

As seen in Table 4, the same characteristics as in Example 1 were obtained.

Moreover, as a result of measuring the sample, it was found that it was a mixture of 4-coordinate and 3-coordinate.

<Example 3> When creating the surface layer, the bias voltage of the cylinder was ◆10
A drum and a sample were prepared in the same manner as in Example 1 under the preparation conditions shown in Table 1 so that the voltage was 0V, and the same evaluation was performed.

The results are shown in Table 5.

The same characteristics as in Example 1 were obtained for the shuttle shown in the 'fSs table.

Moreover, as a result of measuring the sample, it was found that it was a mixture of 4-coordinate and 3-coordinate.

<Example 4> A drum was prepared in the same manner as in Example 1 under the conditions shown in Table 6 for the charge injection blocking layer, photoconductive layer, and surface layer, and the same evaluation was performed.

The results are shown in Table 7.

As seen in Table 7, the same characteristics as in Example i were obtained.

<Example 5> Anodizing an aluminum cylinder to create an aluminum oxide layer (8Q2o3) on the cylinder surface,
This is used as a charge injection blocking layer, and a light guide layer is placed on top of this layer. it
Example 1 with the formation conditions shown in Table 8 for the layer and surface layer, respectively.
A drum was made in the same manner as above, and the same evaluation was conducted.

The results are shown in Table 9.

As shown in Table 9, the same characteristics as in Example 1 were obtained.

<Example 6> A long wavelength light absorption layer (hereinafter referred to as rIR absorption layer), a photoconductive layer, and a surface layer were prepared under the conditions shown in Table 10, respectively.
A drum was produced in the same manner as in Example 1, and the same evaluation was performed.

Furthermore, the drum was set in an electrophotographic apparatus that uses a semiconductor laser having a wavelength of 7 lSnm for image exposure, and it was checked whether interference fringes were formed on the image.

The results are shown in Table 11.

As seen in Table 11, characteristics similar to those of Example 1 were obtained, and no interference fringes appeared.

<Example 7> A drum was produced in the same manner as in Example 1 under the production conditions shown in Table 12 for the adhesive layer, photoconductive layer, and surface layer, and the same evaluation was performed.

The results are shown in Table 13.

As shown in Table 13, the same special P main as in Example 1 was obtained.

<Example 8> A drum was prepared in the same manner as in Example 1 with the IR absorbing layer, charge injection blocking layer, photoconductive layer, and surface layer each under the conditions shown in Table 14, and the drum was prepared in the same manner as in Example 6. was evaluated.

The results are shown in Table 15.

The same characteristics as in Example 1 were obtained in the 7515 table.

Example 9 A drum was prepared in the same manner as in Example 1 with the adhesion layer, charge injection blocking layer, photoconductive layer, and surface layer prepared under the conditions shown in Table 16, and the same evaluation was performed.

The results are shown in Table 17.

As shown in Table 17, the same special properties as in Example 1 were obtained.

<Example 10> A drum was prepared in the same manner as in Example 1, with the adhesion layer, IR absorption layer, and charge injection [1] stop layer, photosensitive layer, and surface layer each under the conditions shown in Table 18. The same evaluation as in Example 6 was performed.

The results are shown in Table 19.

As seen in Table 19, the same characteristics as in Example 1 were obtained.

<Example 11> A plurality of drums were prepared under the same conditions as in Example 1 except that the conditions for forming the light-guiding Ti layer were changed to several conditions shown in Table 20.

As a result of subjecting these drums to the same evaluation as in Example 1,
In all cases, similar to Example 1, drums fully satisfying the electrophotographic characteristics were obtained.

<Example +2> A plurality of drums were prepared under the same conditions as in Example 2 except that the conditions for forming the photoconductive layer were changed to several conditions shown in Table 2).

As a result of subjecting these drums to the same evaluation as in Example 2,
In all cases, similar to Example 2, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 13> The conditions for forming the photoconductive layer were changed to several conditions shown in Table 22, and the other conditions were the same as in Example 3. We prepared 31 drums.

As a result of subjecting these drums to the same evaluation as in Example 3,
In all cases, similar to Example 3, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 14> A plurality of drums were prepared under the same conditions as in Example 4 except that the conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 23.

As a result of subjecting these drums to the same evaluation as in Example 4,
In all cases, similar to Example 4, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 15> The conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 24, the conditions for forming the photoconductive layer were changed to several conditions shown in Table 25, and the other conditions were as in Example 4. Under the same conditions, the second
A plurality of drums shown in Table 6 were prepared.

As a result of subjecting these drums to the same evaluation as in Example 4,
In all cases, similar to Example 4, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 16> The conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 24, the conditions for forming the photoconductive layer were changed to several conditions shown in Table 27, and the conditions for forming the surface layer were changed to several conditions shown in Table 27. A plurality of drums shown in Table 29 were prepared under the conditions shown in Table 28.

As a result of subjecting these drums to the same evaluation as in Example 4,
In all cases, similar to Example 4, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 17> The conditions for forming the charge injection blocking layer were changed to the type a conditions shown in Table 24, the conditions for forming the leading tTt5 were changed to several types of conditions shown in Table 27, and the conditions for forming the surface layer were A plurality of drums shown in Table 31 were prepared under the conditions shown in Table 30.

As a result of subjecting these drums to the same evaluation as in Example 4,
In all cases, similar to Example 4, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 18> A plurality of drums shown in Table 32 were prepared under the same conditions as in Example 5 except that the conditions for forming the leading layer were changed to several conditions shown in Table 25.

As a result of subjecting these drums to the same evaluation as in Example 5,
In all cases, similar to Example 5, drums fully satisfying the electrophotographic characteristics were obtained.

<Example! 9> The conditions for forming the surface layer were changed to those shown in Table TS28, the conditions for forming the photoconductive layer were changed to several conditions shown in Table 27, and the other conditions were the same as in Example 5. A plurality of drums shown in the table were prepared.

As a result of evaluating these drums in the same manner as in Example 5,
In all cases, similar to Example 5, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 20> The conditions for forming the surface layer were changed to those shown in Table 30, the conditions for forming the photoconductive layer were changed to several conditions shown in Table M27, and the other conditions were the same as in Example 5. , a plurality of drums shown in Table 34 were prepared.

As a result of subjecting these drums to the same evaluation as in Example 5,
In all cases, similar to Example 5, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 2)> The conditions for creating the IR absorption layer were changed to several conditions shown in Tables 35 and 36, and the third
A plurality of drums shown in Table 7 were prepared.

As a result of subjecting these drums to the same evaluation as in Example 6,
In all cases, similar to Example 6, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 24> The conditions for creating the IR absorption layer were changed to several conditions shown in Table 35.38, and the conditions for creating the layer were changed to the number f1 shown in Table 25.
, and the other conditions were the same as in Example 6.
A plurality of drums shown in Table 39 were prepared.

As a result of subjecting these drums to the same evaluation as in Example 6,
In all cases, similar to Example 6, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 23> The conditions for forming the IR absorption layer were changed to several conditions shown in Table 35.38, the conditions for forming the photoconductive layer were changed to several conditions shown in Table 27, and the conditions for forming the surface layer were changed to several conditions shown in Table 27. A plurality of drums shown in Table 7fr40 were prepared under the conditions shown in Table 28.

As a result of subjecting these drums to the same evaluation as in Example 6,
In all cases, similar to Example 6, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 24> The conditions for creating the IR absorption layer were changed to several conditions shown in Table 35.38, the conditions for creating the leading T1 circle were changed to several conditions shown in Table 27, and the conditions for creating the surface layer were changed to several conditions shown in Table 27. A plurality of 7iTr drums shown in Table 41 were used under the conditions shown in Table 30.

As a result of subjecting these drums to the same evaluation as in Example 6,
In all cases, similar to Example 6, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 25> The conditions for creating the adhesive layer were changed to several conditions shown in Table 42,
Other than that, a plurality of drums shown in Table 43 were prepared under the same conditions as in Example).

As a result of subjecting these drums to the same evaluation as in Example 7,
In all cases, similar to Example 7, drums fully satisfying the electrophotographic characteristics were obtained.

Practical flow example 26> The conditions for creating the adhesive layer were changed to several conditions shown in Table 44,
A plurality of drums shown in Table 45 were prepared under the same conditions as in Example 7, except that the conditions for forming the leading i-layer were changed to several conditions shown in Table 25.

As a result of subjecting these drums to the same evaluation as in Example 7,
In all cases, similar to Example 7, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 27> The conditions for creating the adhesive layer were changed to several conditions shown in Table 44,
The conditions for forming the leading TJ layer were changed to several conditions shown in Table 27, and the conditions for forming the surface layer were changed to the conditions shown in Table 28.
! A plurality of drums shown in table rS48 were prepared.

As a result of subjecting these drums to the same evaluation as in Example 7,
In all cases, similar to Example 7, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 28> The conditions for forming the adhesive layer were changed to several conditions shown in Table 44,
The light guide Ty, the layer creation conditions were changed to several conditions shown in Table 27, and the surface layer creation conditions were changed to the conditions shown in Table 30.
Shown in Table 47? We prepared 31 drums.

As a result of subjecting these drums to the same evaluation as in Example 7,
In all cases, similar to Example 7, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 29> The conditions for creating the IR absorbing layer were changed to several conditions shown in Tables 35 and 36, and the other conditions were the same as in Example 8.
A plurality of drums shown in Table 8 were prepared.

As a result of subjecting these drums to the same evaluation as in Example 8,
In all cases, similar to Example 8, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 30> The conditions for creating the charge injection blocking layer were changed to several conditions shown in Table 4S, the conditions for creating the IR absorption layer were changed to several conditions shown in Table 35.38, and the other conditions were not carried out. A plurality of drums shown in the @SO table were prepared under the same conditions as in Example 8.

As a result of subjecting these drums to the same evaluation as in Example 8,
In all cases, similar to Example 8, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 31> The conditions for creating the charge injection blocking layer were changed to several conditions shown in Table 51, the conditions for creating the IR absorption layer were changed to several conditions shown in Table 35.38, and the surface layer was created. A plurality of drums shown in Table 52 were prepared under the conditions shown in Table 28.

As a result of subjecting these drums to the same evaluation as in Example 8,
In all cases, similar to Example 8, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 32> The conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 51, and! A plurality of drums shown in Table 53 were prepared by changing the conditions for forming the R absorption layer to several conditions shown in Tables 35 and 38, and under the conditions for forming the surface layer as shown in Table 30.

As a result of subjecting these drums to the same evaluation as in Example 8,
In all cases, similar to Example 8, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 33> A plurality of drums shown in Table i55 were prepared under the same conditions as in Example 9 except that the conditions for forming the adhesive layer were changed to several conditions shown in Tables 44 and 54.

As a result of subjecting these drums to the same evaluation as in Example 9,
In all cases, similar to Example 9, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 34> The conditions for creating the charge injection blocking layer were changed to several conditions shown in Table 56, the conditions for creating the dense R layer were changed to several conditions shown in Table 44.57, and the other conditions were not carried out. Under the same conditions as Example 9,
A plurality of drums shown in Table 58 were prepared.

As a result of subjecting these drums to the same evaluation as in Example 9,
In all cases, similar to Example 9, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 35> The conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 24, the conditions for forming the adhesive layer were changed to several conditions shown in Table 44.57, and the conditions for forming the surface layer were changed to several conditions shown in Table 44.57. A plurality of drums shown in Table 59 were prepared under the conditions shown in Table 28.

As a result of subjecting these drums to the same evaluation as in Example 9,
In all cases, similar to Example 9, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 36> The conditions for creating the charge injection blocking layer were changed to several conditions shown in Table 24, the conditions for creating the adhesive layer were changed to several conditions shown in Table 44.57, and the conditions for creating surface] were changed to several conditions shown in Table 24. A plurality of drums shown in Table 60 were prepared under the conditions shown in Table 30.

As a result of subjecting these drums to the same evaluation as in Example 9,
In each case, similar to Example 1, drums that fully satisfied the electrophotographic characteristics were obtained.

<Example 37> TS was produced under the same conditions as in Example 10 except that the conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 61.
A plurality of drums shown in Table 62 were prepared.

As a result of subjecting these drums to the same evaluation as in Example 10, all drums were obtained which fully satisfied the electrophotographic characteristics as in Example 1O.

<Example 38> The conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 64, the conditions for forming the photoconductive layer were changed to several conditions shown in Table 63, and the other conditions were as in Example 1O. A plurality of drums shown in Table 65 were prepared under the same conditions as above.

These drums were subjected to the same evaluation as in Example 10, and as in Example 10, all drums were obtained that fully satisfied the electrophotographic characteristics.

<Example 39> The conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 64, the conditions for forming the photoconductive layer were changed to several conditions shown in Table 66, and the conditions for forming the surface layer were changed to several conditions shown in Table 66. A plurality of drums shown in Table 67 were prepared under the conditions shown in Table 28.

These drums were subjected to the same evaluation as in Example 10, and as in Example 10, all drums were obtained that fully satisfied the electrophotographic characteristics.

<Example 40> The conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 64, the conditions for forming the photoconductive layer were changed to several conditions shown in Table 66, and the conditions for forming the surface layer were changed to several conditions shown in Table 66. Under the conditions shown in Table 30, drums with the number 'a shown in Table 68 were prepared.

These drums were subjected to the same evaluation as in Example 10, and as in Example 10, all drums were obtained that fully satisfied the electrophotographic characteristics.

<Example 41> The formation conditions of the charge injection blocking layer were changed to several conditions shown in Table 51, the formation conditions of the In absorption layer were changed to the conditions of type a shown in Table 35.38, and the formation conditions of the photoconductive layer were A plurality of drums shown in Table M71 were prepared under the conditions for forming the surface layer as shown in Table 69 and the conditions for forming the surface layer as shown in Table 70.

As a result of subjecting these drums to the same evaluation as in Example 8,
In all cases, similar to Example 8, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 42> The conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 51, the conditions for forming the In absorption layer were changed to several conditions shown in Tables 35 and 38, and the conditions for forming the photoconductive layer were changed to several conditions shown in Table 51. The preparation conditions are shown in Table 72, the surface layer preparation conditions are shown in Table 70, and the conditions are shown in Table 73. Xt number of drums were prepared.

As a result of subjecting these drums to the same evaluation as in Example 8,
In all cases, similar to Example 8, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 43> The conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 51, the conditions for forming the I11 absorption layer were changed to several conditions shown in Table 35.38, and the conditions for forming the photoconductive layer were changed to several conditions shown in Table 35.38. A plurality of drums shown in Table 74 were prepared under the conditions for forming the surface layer as shown in Table 69 and the conditions for forming the surface layer as shown in Table 28.

As a result of subjecting these drums to the same evaluation as in Example 8,
In all cases, similar to Example 8, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 44> The conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 51, the conditions for forming the In absorption layer were changed to several conditions shown in Tables 35 and 38, and the conditions for forming the photoconductive layer were changed to several conditions shown in Table 35.38. A plurality of drums shown in Table 75 were prepared under the conditions shown in Table 72 for the production conditions and the conditions for the production of the surface layer shown in Table 28.

As a result of subjecting these drums to the same evaluation as in Example 8,
In all cases, similar to Example 8, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 45> The conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 51, the conditions for forming the In absorption layer were changed to several conditions shown in Table 35.38, and the conditions for forming the photoconductive layer were changed to several conditions shown in Table 35.38. A plurality of drums shown in Table 7rS76 were prepared under the conditions for forming the surface layer as shown in Table 6g and the conditions for forming the surface layer as shown in Table 30.

As a result of subjecting these drums to the same evaluation as in Example 8,
In all cases, similar to Example 8, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 46> The conditions for forming the charge injection blocking layer were changed to several conditions shown in Table 51, the conditions for forming the In absorption layer were changed to several conditions shown in Tables 35 and 38, and the conditions for forming the photoconductive layer were changed to several conditions shown in Table 35.38. A plurality of trams shown in Table 77 were prepared under the conditions shown in Table 72 and the conditions for forming the surface layer shown in Table 30.

As a result of subjecting these drums to the same evaluation as in Example 8,
In all cases, similar to Example 8, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 47> A plurality of drums were prepared in which the conditions for forming the charge injection blocking layer and the photoconductive layer were as shown in Table 78, and the conditions for forming the surface layer were shown in Table 7579.

As a result of subjecting these drums to the same evaluation as in Example 4,
In all cases, similar to Example 4, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 48> A plurality of drums were prepared in which the conditions for forming the absorption layer, the charge injection blocking layer, and the photoconductive layer of Example 11 were as shown in Table 80, and the conditions for forming the surface layer were as shown in Table 81.

As a result of subjecting these drums to the same evaluation as in Example 8,
In all cases, similar to Example 8, drums fully satisfying the electrophotographic characteristics were obtained.

<Example 49> A plurality of drums were prepared under the conditions for forming the dense rock layer, the IR absorption layer, the charge injection blocking layer, and the photoconductive layer as shown in Table 82, and the conditions for forming the surface layer as shown in Table 83. .

These drums were subjected to the same evaluation as in Example 1O, and as in Example 10, all drums were obtained that fully satisfied the electrophotographic characteristics.

Nut LN Example 50> A drum was prepared in the same manner as in Example 1 with the charge injection blocking layer, optical 47 layer, intermediate layer, and surface layer shown in Table TS84, and the same evaluation was conducted. As in Example 1, a drum with excellent electrophotographic properties was obtained.

〈Example 51〉 The mirror-finished cylinder was further subjected to swivel processing using a sword bit with various angles, and cylinders with the determined shape as shown in Fig. 3 and various cross-sectional patterns as shown in Table 85 were made. I prepared several books. The cylinders were sequentially set in the manufacturing apparatus shown in Fig. 2 and subjected to drum manufacturing under the same manufacturing conditions as in Example 1.The manufactured drums were evaluated in the same manner as in Example 1. As in Example 1, a drum fully satisfying the electrophotographic properties was obtained.

<Example 52> The surface of the mirror-finished cylinder was subjected to a so-called surface dimple treatment in which the surface of the cylinder was exposed to the falling of many bearing balls to produce countless dents on the cylinder surface, as shown in Fig. 4. A plurality of cylinders were prepared with the judgment shape as shown in Table 85 and various cross-sectional patterns as shown in Table 85.

The cylinders were sequentially set in the manufacturing apparatus shown in FIG. 2 and subjected to drum manufacturing under the same manufacturing conditions as in Example 1. The produced drums were evaluated in the same manner as in Example 1, and as a result, drums that fully satisfied the electrophotographic characteristics were obtained in all cases, as in Example 1.

Table 23 7524 Table 25 Table 32 'fS33 Table 34 Table 35 Table 35 (continued) Table 36 Table 36 (continued) 7537 Table 38 Table 38 (continued) 39 Table 40 Table 4L Table 45 Table 46 Table 47 Table 48 Table 49 Table 50 Table 51 Table 7352 Table 7 JS53 Table 55 Table 56 Table i61 Table 62 Table 64 Table 65 Table 67, Table 68, Table 71, Table 73, Table 74, Table 75, Table 76, Table 77, Table 85, Table 7586 (Summary of the effects of the invention). By providing a surface protective layer composed of a non-single-crystalline material containing a mixture of boron nitride with three-coordinated groove structure, it has particularly excellent moisture resistance, continuous repeated use characteristics, electrical pressure resistance, It has usage environment characteristics and durability, and when the light-receiving member of the present invention is applied as an electrophotographic image forming member, there is no influence of residual potential and its electrical characteristics are stable. In particular, it is excellent in image defects, image deletion, and cleanability.

[Brief explanation of drawings]

FIGS. 1(A) to 1(1) are diagrams schematically showing some typical examples of the layer structure of the light receiving member of the present invention, and 'fS2
The figure is an example of an apparatus for manufacturing the light-receiving member of the present invention, and is a schematic explanatory diagram of a manufacturing apparatus using a glow discharge method. FIGS. 3 and 4 are diagrams showing examples of the cross-sectional shape of the support of the light-receiving member of the present invention. 10 ports...Light receiving member, 101...Support, 102
...Leading conductor layer, 103...Surface protection layer, 104...
- Charge injection blocking layer, 105...Long wavelength light absorption layer, 10
6... Adhesive layer, 107... Free surface, 108...
Intermediate layer, 201... Reaction chamber, 202-206... Gas cylinder, 207-2) 1... Mass flow controller, 2) 2-2) 6... Inflow valve 2) 7-22)...
・Outflow valve, 222-226... valve 227-2
31... Pressure regulator, 2:12, 233... Auxiliary valve, 234... Main valve, 235... Leak valve 23B... Vacuum gauge, 237... Base cylinder, 238... Heater, 239...Motor, 240...High frequency power supply

Claims (6)

[Claims] (1) A support, a photoconductive layer made of an amorphous material based on silicon atoms and containing at least one of hydrogen atoms or halogen atoms, and a surface protective layer on the support. In the light receiving member comprising at least a light receiving layer, the surface protective layer is made of a non-single crystal material containing a mixture of boron nitride having a four-coordinate structure and boron nitride having a three-coordinate structure. A light-receiving member characterized by: (2) The light-receiving member according to claim (1), wherein the light-receiving layer has a multilayer structure of three or more layers. (3) The light-receiving member according to claim (2), wherein the light-receiving layer has a charge injection blocking layer. (4) The light-receiving member according to claim (2), wherein the light-receiving layer has a long wavelength light absorption layer. (5) The light-receiving member according to claim (2), wherein the light-receiving layer has an adhesive layer having a function of improving adhesiveness. (6) The light-receiving member according to claim (2), which has an intermediate layer between the photoconductive layer and the surface protection layer.