JPS62259453A - Probe card - Google Patents
Probe cardInfo
- Publication number
- JPS62259453A JPS62259453A JP61102530A JP10253086A JPS62259453A JP S62259453 A JPS62259453 A JP S62259453A JP 61102530 A JP61102530 A JP 61102530A JP 10253086 A JP10253086 A JP 10253086A JP S62259453 A JPS62259453 A JP S62259453A
- Authority
- JP
- Japan
- Prior art keywords
- lsi
- substrate
- probe card
- bumps
- pads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はLSIのウェハーテスト時に使用するプローブ
カードに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a probe card used during LSI wafer testing.
第3図(a) 、 (b)において、従来、この種のウ
ェハー上のLSIテストに用いるプローブカードは第2
図に示すウェハー1上のLSI 2に形成された複数個
のバンプ3,3・・・と同数の針4,4.・・・を備え
、各折4の一端を多層基板5に支持させ、その他端をバ
ンプ3と1対1で対応する位置に配列した構造になって
おり、各折4をLSI 2の各バンプ3に接触させたま
ま、図示しないプローバ装置からの信号をプローブカー
ドのコンタクトピン6に通して針4に入力し、針4とバ
ンプ3との間で信号の授受を行う測定治具として用いら
れている。In FIGS. 3(a) and 3(b), the probe card conventionally used for this type of LSI test on a wafer is
A plurality of bumps 3, 3 . . . formed on the LSI 2 on the wafer 1 shown in the figure and the same number of needles 4, 4 . ..., one end of each fold 4 is supported by the multilayer substrate 5, and the other end is arranged in a position corresponding to the bump 3 on a one-to-one basis, and each fold 4 is connected to each bump of the LSI 2. 3, a signal from a prober device (not shown) is input to the needle 4 through the contact pin 6 of the probe card, and is used as a measuring jig for transmitting and receiving signals between the needle 4 and the bump 3. ing.
しかしながら、上述した従来のプローブカードは針によ
ってLSIのバンプに接触しているので、LSI 2の
一辺当りにたくさんのバンプ3をもつLSI用のプロー
ブカードの場合には、より細い針を使うことになりその
製造が困難となる。又、細い針であるため、強度が減少
し、耐久性に欠点がある。However, in the conventional probe card mentioned above, the needle contacts the bumps of the LSI, so in the case of a probe card for an LSI that has many bumps 3 per side of the LSI 2, a thinner needle is used. This makes manufacturing difficult. In addition, since the needle is thin, its strength is reduced and its durability is disadvantageous.
本発明の目的はLSIのバンプから受ける接触圧に対す
る耐久性を向上したプローブカードを提供することにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a probe card that has improved durability against contact pressure from bumps on an LSI.
本発明はウェハー上に形成されたLSIの複数個のバン
プの各々と1対1に対応させてプローブカード用基板上
に複数個の接触用パッドを隆起させて形成したことを特
徴とするプローブカードである。The present invention provides a probe card characterized in that a plurality of contact pads are formed by protruding them on a probe card substrate in one-to-one correspondence with each of a plurality of bumps of an LSI formed on a wafer. It is.
以下、本発明の一実施例を図により説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第1図(a) 、 (b)において、本発明に係るプロ
ーブカードはLSI 2の各バンプ3と1対1に対応さ
せてプローブカード用多層基板5の板面上に複数個の接
触用パッド7.7・・・を隆起させて形成したものであ
る。また、基板5の周縁にはコンタクトピン6.6・・
・が設けられており、各コンタクトピン6と各パッド7
とは基板5内に通して配線されている。In FIGS. 1(a) and 1(b), the probe card according to the present invention has a plurality of contact pads on the surface of a multilayer substrate 5 for a probe card in one-to-one correspondence with each bump 3 of the LSI 2. 7.7... is formed by raising it. Further, contact pins 6.6 are provided at the periphery of the substrate 5.
- are provided, each contact pin 6 and each pad 7
is wired through the board 5.
また、基板5の一部には基板5を貫通した目合せ用孔8
が設けである。Further, in a part of the substrate 5, an alignment hole 8 penetrating through the substrate 5 is provided.
is the provision.
本発明に係るプローブカードは接触用パッド7を下向き
にして基板5を図示しないプローブ装置に装着するとと
もに、基板5のコンタクトピン6をプローブ装置の信号
線に接続して用い、基板5の目合せ用孔8を通して接触
用パッド7をLSI 2のバンプ3に位置合せしてパッ
ド7とバンプ3とを接触させ、その間で信号の授受を行
いLSIの電気的特性を検査する。In the probe card according to the present invention, the substrate 5 is attached to a probe device (not shown) with the contact pads 7 facing downward, and the contact pins 6 of the substrate 5 are connected to signal lines of the probe device. The contact pad 7 is aligned with the bump 3 of the LSI 2 through the hole 8, the pad 7 and the bump 3 are brought into contact, and signals are exchanged between them to test the electrical characteristics of the LSI.
本発明は以上説明したように接触用パッドを基板上に隆
起させて形成したので、 LSIのバンプの個数増大に
伴い接触用パッドとして細径のものを用いる場合にも、
接触用パッドがLSIのバンプがら受ける接触圧力に対
して十分な耐久性をもっことができ、バンプの個数が多
いLSIのテスト用として用いることができる。さらに
接触用パッドが耐久性を備えているので、該パッドをL
SIのバンプに十分な押圧力をもって接触させることが
でき、接触抵抗を十分に小さくして信号の授受を行い微
小信号までもピックアップして正確な試験を行うことが
できる効果を有するものである。As explained above, in the present invention, the contact pads are formed by protruding them on the substrate, so that even when using small diameter contact pads as the number of bumps in LSI increases,
The contact pad can have sufficient durability against the contact pressure exerted by the bumps of the LSI, and can be used for testing LSIs with a large number of bumps. Furthermore, since the contact pad is durable,
This has the effect that it can be brought into contact with the bumps of the SI with sufficient pressing force, the contact resistance can be sufficiently reduced, signals can be sent and received, and even minute signals can be picked up to perform accurate tests.
第1図(a)は本発明のプローブカードを示す正面図、
(b)は一部所面した側面図、第2図はLSIを形成し
たウェハーを示す正面図、第3図(a)は従来のプロー
ブカードを示す正面図、(b)は同側面図であ・る。FIG. 1(a) is a front view showing a probe card of the present invention;
(b) is a partial side view, FIG. 2 is a front view showing a wafer on which LSI is formed, FIG. 3 (a) is a front view showing a conventional probe card, and (b) is the same side view. be.
Claims (1)
の各々と1対1に対応させてプローブカード用基板上に
複数個の接触用パッドを隆起させて形成したことを特徴
とするプローブカード。(1) A probe card characterized in that a plurality of contact pads are formed by raising a plurality of contact pads on a probe card substrate in one-to-one correspondence with each of a plurality of bumps of an LSI formed on a wafer. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61102530A JPS62259453A (en) | 1986-05-02 | 1986-05-02 | Probe card |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61102530A JPS62259453A (en) | 1986-05-02 | 1986-05-02 | Probe card |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62259453A true JPS62259453A (en) | 1987-11-11 |
Family
ID=14329860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61102530A Pending JPS62259453A (en) | 1986-05-02 | 1986-05-02 | Probe card |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62259453A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01123157A (en) * | 1987-11-09 | 1989-05-16 | Hitachi Ltd | Probe head for semiconductor lsi inspecting apparatus and preparation thereof |
JPH01184477A (en) * | 1988-01-18 | 1989-07-24 | Hitachi Ltd | Probe head for semiconductor lsi inspecting device and its manufacture |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5927541A (en) * | 1982-06-03 | 1984-02-14 | テキサス・インスツルメンツ・インコ−ポレイテツド | Semiconductor circuit device |
JPS62217627A (en) * | 1986-03-18 | 1987-09-25 | Mitsubishi Electric Corp | Probing device for semiconductor element |
-
1986
- 1986-05-02 JP JP61102530A patent/JPS62259453A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5927541A (en) * | 1982-06-03 | 1984-02-14 | テキサス・インスツルメンツ・インコ−ポレイテツド | Semiconductor circuit device |
JPS62217627A (en) * | 1986-03-18 | 1987-09-25 | Mitsubishi Electric Corp | Probing device for semiconductor element |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01123157A (en) * | 1987-11-09 | 1989-05-16 | Hitachi Ltd | Probe head for semiconductor lsi inspecting apparatus and preparation thereof |
JPH0640106B2 (en) * | 1987-11-09 | 1994-05-25 | 株式会社日立製作所 | Probe head for semiconductor LSI inspection device and manufacturing method thereof |
JPH01184477A (en) * | 1988-01-18 | 1989-07-24 | Hitachi Ltd | Probe head for semiconductor lsi inspecting device and its manufacture |
JPH0810246B2 (en) * | 1988-01-18 | 1996-01-31 | 株式会社日立製作所 | Method for manufacturing probe head for semiconductor LSI inspection device |
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