JPS62253187A - Making of matrix display unit - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a matrix display device having high display quality such as high contrast.

The prior art relates more specifically to a method of manufacturing a substrate constituting a matrix display device. A characteristic feature of the substrate is that a single or plural non-linear two-terminal elements are provided for each picture element, and are also electrically connected to each picture element electrode. The present invention is related to the manufacturing method of this non-linear two-terminal element in terms of wood quality.

The term "non-linear two-terminal element" herein refers to a two-terminal element whose current-voltage characteristics exhibit non-linearity and approximately exhibit constant voltage characteristics in a relatively large voltage region.

A 7-trix display device with a non-linear two-terminal element is one of the keys to realizing a high-density 5-capacity display. In other words, the current major FJIlG in technology related to matrix display devices as mentioned above is
With the spread of computers, the expansion of advanced information communication networks, and the increasing sophistication of video information, the realization of a matrix display device is considered to be one of the core technologies for realizing the potential of matrix display devices for large amounts of information. Display media for this purpose include, for example, liquid crystal display elements, electroluminescent display elements, electrophoretic display elements, electrochromic display elements, plasma display elements, and the like.

The present invention relates to a matrix display device, which we have discovered, which is equipped with a non-linear two-terminal element for each picture element and is composed of at least one substrate, and therefore,
Strictly speaking, there is no prior art example for the manufacturing method disclosed by the present invention. That is, the present invention appears to have clear novelty. Hereinafter, we will discuss the inventiveness of the method for manufacturing a matrix display device provided by the present invention, taking the case of a liquid crystal matrix display device as an example.

A cross-sectional view and a plan view of the structure of a non-linear two-terminal element for a matrix display device to which the present invention relates are shown in FIG. 3, and a layout diagram on a substrate is shown in FIG. 3 and 4 are examples of at least one substrate of a liquid crystal matrix display device, for example. In FIG. 3, (al is a cross-sectional view of the configuration, (bl is a plan view, 101 is a substrate, 102 is a lower conductor layer with a gap, 103 is a semiconductor layer, and 104 is an upper conductor layer. Figure 4 fat corresponds to the case where one stage of non-linear two-terminal elements is used for each picture element, and Figure 4 (bl) corresponds to the case where two stages of non-linear two-terminal elements are used for each picture element. In the figure,
111 is a terminal, 112 is a bus bar, 113 is a lower conductor layer, 114 is a composite layer of a semiconductor layer and an upper conductor layer, and 115 is a picture element electrode.

The nonlinearity in the voltage-current characteristics is shown in Figure 3 as follows:
It is assumed that this occurs inside the semiconductor layer 103 or at the contact portion between the semiconductor layer 103 and the conductor layer 102 or 104. It is also understood from FIG. 4 that a non-linear element is provided for each picture element on at least one of the substrates that sandwich the liquid crystal layer to form a liquid crystal panel.

We have previously explained that the semiconductor layer and the upper conductor layer in FIG.
Since there is no suitable etchant for semiconductors made of compounds of 3), selenium (Se), and sulfur (S), and tellurium (Te), they were formed using a lift-off process.

FIG. 5 is a sectional view of a structure for explaining a typical example of the method as described above. In FIG. 5, 121 is a substrate, 1
22 is a transparent indium oxide layer (hereinafter referred to as 170 layer) containing tin (S n ), and 123 is an arsenic (As
), 124 is a tellurium (Te) layer, and 125 is a resist layer.

Among the manufacturing methods of matrix display devices that we have previously adopted,
The key method for manufacturing a nonlinear two-terminal element will be explained below using FIG. 5. First, a substrate 121 having 170 layers 122 with gaps as shown in FIG.
As shown in FIG. 5fbl, a photoresist layer 125 having a reverse tapered cross section is formed. Furthermore, arsenic (As)
A compound of selenium (Se) and sulfur (S) is vacuum-deposited to obtain a semiconductor layer 123 [Fig. As a result, the semiconductor layer of the photoresist layer 125'' is removed by swelling and dissolving.
, a photoresist layer 125 having a reverse tapered cross section is formed by photolithography so that the openings are smaller than in the case of (b). Furthermore, tellurium (Te) is vacuum deposited to form a tellurium (Te) layer 124. In this way, the photoresist layer 125 shown in FIG. The layer is automatically removed to obtain te+ in FIG. 5. Thus, a non-linear two-terminal element for liquid crystal matrix display is obtained.

There is no suitable etchant for semiconductors made of compounds of arsenic (As), selenium (Se), and sulfur (S), and therefore, in the formation of the non-linear two-terminal elements, which are important in the manufacture of matrix display devices, As mentioned above, a lift-off process was essential.

Problems to be Solved by the Invention For example, in a liquid crystal display device, on at least one of the substrates sandwiching the liquid crystal layer, the above-mentioned non-linear two terminals are electrically connected in cascade to each pixel for each pixel. Providing the element significantly improves the display quality of the liquid crystal panel. Just to be sure, we are the first to discover such a non-linear two-terminal element.

In the conventional manufacturing method of a matrix display substrate having the non-linear two-terminal element, especially in the manufacturing method of the non-linear two-terminal element, a lift-off process is essential. Because of this, manufacturing is complicated, manufacturing costs increase, manufacturing yield decreases, and furthermore, if the semiconductor layer or the upper conductor layer is made thicker than about 500", lift-off will occur. There were a lot of problems, including incompleteness.

Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a non-linear two-terminal element formed in each picture element on a substrate constituting a matrix display device. Sequentially, a lower conductor layer having a gap, arsenic (A
In manufacturing a non-linear two-terminal device including a semiconductor layer made of a compound of s), selenium (Se), and sulfur (S), and an upper conductor layer laminated on the semiconductor layer, the semiconductor layer and When forming the upper conductor layer, continuous deposition is performed using a single mask, and the semiconductor layer is deposited from a plurality of directions, and the island region of the semiconductor layer includes the island region of the upper conductor layer. The present invention provides a method for manufacturing such a matrix display device.

The lower conductor layer is indium oxide (ITO) containing tin (Sn), tin oxide containing antimony (Sb),
Titanium (Ti), chromium (Cr) or aluminum (
It is desirable that it consists of Ajri.

The preferred percentage of arsenic (As) in the compound is from 10 atomic % to 80 atomic %.

The upper conductor layer is made of tellurium (Te), aluminum (A
However, it is preferably made of chromium (CrL) or titanium (Ti).

In the above manufacturing method, the mask is preferably formed of a magnetic metal, and the attachment of the mask to the substrate is preferably achieved by magnetic attraction.

In the above manufacturing method, it is desirable that the mask be attached to the substrate via a spacer by magnetic attraction.

Function The conventional manufacturing method of the matrix display device to which the present invention relates,
In particular, in the conventional manufacturing method of non-linear two-terminal elements,
This method involves a lift-off process one or more times, thus increasing the number of man-hours (increasing the manufacturing cost and significantly reducing the manufacturing yield).

According to the manufacturing method of the present invention, in the key manufacturing method of a non-linear two-terminal element, in the formation of the semiconductor layer and the upper conductor layer, -times of installation in a vacuum chamber and subsequent continuous Vt evaporation are performed. , the non-linear two-terminal element for matrix display can be obtained. That is, it has become possible to eliminate photolithography methods, especially lift-off processes. As a result, the number of man-hours during manufacturing is reduced, manufacturing costs are reduced, and manufacturing yields are improved. Further, even when the semiconductor layer and the upper conductor layer were deposited to a thickness of about several micrometers, no peeling occurred and the manufacturing yield did not decrease.

Embodiment FIGS. 1 and 2 are flowcharts for explaining one embodiment of a typical method for manufacturing a non-linear two-terminal element, which is a key component in the method for manufacturing a matrix display device according to the present invention. Figures 1 and 2
The figure is a sectional view of the structure.

In Fig. 1, 1 is a substrate, 2 is a lower conductor layer with a gap, and this may be made of a primary structure with titanium (Ti) or chromium (Cr) laminated on 170 layers, or a composite layer. good. However, the cross section of the lower conductor layer is preferably tapered rather than steep. 3 is a semiconductor layer, 4 is an upper conductor layer, and 5 is a permanent magnet plate magnetized in the thickness direction, preferably a samarium-cobalt magnet or a ferrite magnet. Reference numeral 6 denotes a spacer made of organic resin or metal, and is shaped so that the cross section near the opening of the mask is equivalently inversely tapered, as shown in FIG. 1 (bl, fcl). 8 is a mask made of magnetic metal; 8 is a semiconductor layer deposited on the mask; 9 is a conductor layer attached to the mask; 10 is a plurality of deposition directions when forming the semiconductor layer;
11 is the single deposition direction during the formation of the two-part conductor layer.

In FIG. 2, 21 is a substrate, 22 is a lower conductor layer having a gap, and the same can be said as described above. 23 is a semiconductor layer, 24 is an upper conductor layer, and 25 is a permanent magnet plate magnetized in the thickness direction, and the same can be said as described above. 26 is a gap naturally generated due to warping of the mask, etc., 27
28 is a mask made of magnetic metal, 28 is a semiconductor layer deposited on the mask, 29 is a conductor layer attached to the mask, 30 is a plurality of deposition directions when forming a semiconductor layer, and 31 is a part of a conductor layer formed. single deposition direction.

In the method for manufacturing a matrix display device according to the present invention, a typical procedure for manufacturing a non-linear two-terminal element, which is a key element, will be described below. As shown in Figure 1 (al and Figure 2 + a),
Purchase substrates 1 and 21 with a lower conductor layer with a gap. The substrate 1 or 21 is generally selected from an insulating material with a smooth surface, such as glass, ceramic, or plastic. In some cases, the substrate is further required to have translucency. The lower conductor layer is preferably formed of TTO, tin oxide containing antimony (Sb), titanium (Ti), chromium (Cr), aluminum (AI), etc. Next, permalloy, SUS 430, nickel, etc. A metal mask made of a thin magnetic metal plate [FIG. 2 25], or a hole in the metal mask,
A spacer with a large hole [Fig. 1 6] glued is aligned with a substrate having a lower conductor layer with a gap using an aligner, etc., and magnetized in the thickness direction on the other main surface of the substrate. The permanent magnet plates are brought into close contact and fixed so as to sandwich the substrate [see 1. in Figure 1]. (C1), Figure 2 (bl.

(C)]. The metal mask is wet or dry etched,
Alternatively, it is usually produced by laser processing. The spacer excessively exposes a positive pattern forming dry film or a positive photoresist layer attached to the metal mask from the metal mask side,
It can be obtained by developing it or by backing out a metal film with larger openings than the metal mask. Next, it is placed in a vacuum chamber, and arsenic (As) and selenium (S) are placed in a vacuum chamber.
Using a compound of e) and sulfur (S) as a source, it is deposited from a plurality of directions by a resistance heating evaporation method or an electron beam heating evaporation method (first appearance), FIG. 2(b)]. Next, from a single direction, the upper conductor layer [Figure 1 4. 24] is deposited by a resistance heating evaporation method or an electron beam heating evaporation method [FIGS. 1(C) and 2(C)].

The upper conductor layer is made of tellurium (Te) and titanium (Ti).

Preferably, it is made of aluminum (Al) or chromium (Cr). Next, the permanent magnet plate and the metal mask are removed to obtain a non-linear two-terminal element for matrix display [FIGS. 1(d) and 2(d)]. As a result of observation using a metallurgical microscope, it was confirmed that this non-linear two-terminal element had a structure as shown in FIG.

Individual examples are shown below. In this embodiment, a liquid crystal display device will be described, but the present invention is not limited thereto.

(Example 1) A substrate having a non-linear two-terminal element was manufactured by the procedure shown in FIG. Substrate 1 is silicon dioxide (S) on soda glass.
i 02 ) was used.

Two types of lower conductor layers 2 were prepared, each of which was made of titanium (Ti) or TTO and had a thickness of approximately 2000 mm. The semiconductor layer 3 contains approximately 40 atomic percent arsenic (As) and selenium (S
The film was formed by a resistance heating evaporation method using a molybdenum (MO) boat using a compound having a component ratio of about 15 atomic % of e) and about 15 atomic % of sulfur (S) as a thin deposition source. The upper conductor layer 4 was made of tellurium (Te). The thickness of the semiconductor layer 3 is approximately 400 mm, 500 A, 1000 mm,
2000 people.

Various boards of 3,000, 4,000, 5,000, and 6,000 layers were made, and the thickness of the tellurium (Te) Jil, which is the upper conductor layer 4, was about 200 layers for each board.

500 people, 1000 people, 2000 people, 3000 people.

128 substrates having non-linear two-terminal elements each satisfying each of a total of 2×8×8=128 conditions were obtained, with the number of substrates changed to 4,000, 5,000, and 8,000.

When the electrical characteristics of the nonlinear two-terminal elements of each of the substrates were measured, the nonlinearity in current-voltage characteristics was significant in all cases. The capacitance of this product was also relatively small, which was preferable. When liquid crystal matrix display devices were manufactured using these substrates, the display contrast was 10:1 or more using a driving method with a bias of 1/7 and a duty of 1/1000.

(Example 2) A substrate having a non-linear two-terminal element was manufactured according to the procedure shown in FIG. Substrate 1 is silicon dioxide (S) on soda glass.
i 02 ) was used.

Two types of lower conductor layers 2, each made of titanium (Ti) or TTO, each having a thickness of approximately 2000 mm were prepared. The semiconductor layer 3 contains approximately 40 atomic percent arsenic (As) and selenium (
The component ratio of Se) is approximately 5 at%, 10 at%, 20 at%, 30 at%, 40 at%, 50 at%, 55 at%
They were formed by a resistance heating evaporation method using a molybdenum (MO) boat using various compounds of arsenic (As), selenium (Se), and sulfur (S) as evaporation sources. The upper conductor layer 4 was made of tellurium (Te). The thickness of the semiconductor layer 3 was approximately 2,300. The thickness of the upper conductor layer was approximately 1000 layers. In this way, 14 substrates having non-linear two-terminal elements each satisfying 2×7=14 conditions were obtained.

When the electrical characteristics of the nonlinear two-terminal elements of each of the substrates were measured, the nonlinearity in current-voltage characteristics was significant in all cases. The capacitance of this product was also relatively small, which was preferable. When liquid crystal matrix display devices were manufactured using these substrates, the display contrast was 10:1 or more using a driving method with a bias of 1/7 and a duty of 1/1000.

(Example 3) A substrate having a non-linear two-terminal element was manufactured according to the procedure shown in FIG. Substrate 1 is silicon dioxide (S) on soda glass.
i 02 ) was used.

The lower conductor layer 2 was made of two types of titanium (Ti) or TTO with a thickness of approximately 1,500 yen.

The semiconductor layer 3 contains about 10 atomic % of arsenic (As).
, 20 atom%, 30 atom%, 50 atom%.

Contains 65 at%, 80 at%, and the remainder is selenium (Se)
and sulfur (S) in an equal atomic percent,
It was obtained by a resistance heating vapor deposition method using a molybdenum (Mo) boat using a compound of arsenic (As), selenium (Se), and sulfur (S) as a vapor deposition source. The thickness of the semiconductor layer is approximately 2
The number of people was 500.

The upper conductor layer 4 is made of tellurium (Te), titanium (Ti), aluminum (Al), and chromium (Cr) with a thickness of approximately 1500 nm.
It was formed using a resistance heating vapor deposition method. Thus, the total is 2X6X
48 substrates having non-linear two-terminal elements satisfying each of 4=48 conditions were obtained.

When the electrical characteristics of the nonlinear two-terminal elements of each of the substrates were measured, the nonlinearity in current-voltage characteristics was significant in all cases. The capacitance of this product was also relatively small, which was preferable. In all cases where liquid crystal matrix display devices were manufactured using these substrates, the display contrast was 10:1 or higher using a driving method with a bias of 1/7 and a duty of 1/1000.

(Example 4) A substrate having a non-linear two-terminal element was manufactured according to the procedure shown in FIG. The substrate 21 is made of silicon dioxide (
A material coated with S s 02 ) was used.

The lower conductor layer 22 is made of tin oxide containing approximately 1000 antimony (Sb), chromium (Cr), or aluminum (A).
1) were prepared. semiconductor layer 2
3 contains arsenic (As), selenium (Se), and sulfur (S) containing about 30 at% arsenic (As), about 10 at% selenium (Se), and about 60 at% sulfur (S). The film was formed by a resistance heating evaporation method using a molybdenum (MO) boat using a compound of 1 as an evaporation source. The thickness of the semiconductor layer is approximately 200 mm
There were 0 people. The upper conductor layer 24 was formed from tellurium (Te) with a thickness of approximately 2000 nm using a resistance heating evaporation method. Thus,
In total, three substrates having non-linear two-terminal elements satisfying each of three conditions were obtained.

When the electrical characteristics of the nonlinear two-terminal elements of each of the substrates were measured, the nonlinearity of LJ in the current-voltage characteristics was significant in all cases. The capacitance of this product was also relatively small, which was preferable. In all cases where liquid crystal matrix display devices were manufactured using these substrates, the display contrast was 10:1 or higher using a driving method with an I/7 bias and a duty of 1/1000.

Effects of the Invention The present invention relates to a method for manufacturing a matrix display device using non-linear two-terminal elements. These non-linear two-terminal elements have great utility in other industrial fields, and therefore the present invention has great industrial utility.

[Brief explanation of drawings]

1 and 2 are cross-sectional views of the structure for explaining the present invention in detail, FIG. 3 is a cross-sectional view and a plan view of the structure of a non-linear two-terminal element, and FIG. 4 is a substrate having a non-linear two-terminal element. FIG. 5 is a cross-sectional view showing a typical manufacturing method of a conventional non-linear two-terminal element. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Lower conductor layer having a gap, 3...Semiconductor layer, 4...Upper conductor layer, 5...・Permanent magnet plate magnetized in the thickness direction, 6. Old spacer, 7. Mask made of magnetic metal, 8. Semiconductor layer deposited on the mask, 9. ...Conductor layer attached to the mask, 1
0... Multiple evaporation directions when forming a semiconductor layer, 1
1... Single vapor deposition direction when forming the upper conductor layer,
21...Substrate, 22...Lower conductor layer having a gap, 23...Semiconductor layer, 24...
... Upper conductor layer, 25 ... Permanent magnet plate magnetized in the thickness direction, 26 ... Naturally generated gap,
27. Old...Mask made of magnetic metal, 28...
- Semiconductor layer deposited on the mask, 29... Conductor layer attached to the mask, 30... Multiple deposition directions during semiconductor layer formation, 31... Single evaporation direction during upper conductor layer formation. Name of agent: Patent attorney Toshio Nakao
Hehe. Taste 8 Peng −

Claims (5)

[Claims] (1) A non-linear two-terminal element formed in each picture element on a substrate constituting a matrix display device, in which a lower conductor layer having a gap, an arsenic layer on the gap and on the lower conductor layer are arranged in sequence. In manufacturing a nonlinear two-terminal device comprising a semiconductor layer made of a compound of (As), selenium (Se), and sulfur (S), and an upper conductor layer laminated on the semiconductor layer, the semiconductor layer and the When forming the upper conductor layer, continuous vapor deposition is performed using one mask, and the semiconductor layer is vapor-deposited from a plurality of directions so that the island region of the semiconductor layer includes the island region of the upper conductor layer. A method for manufacturing a matrix display device characterized by: (2) The lower conductor layer is composed of indium oxide containing tin (Sn), tin oxide containing antimony (Sb), and titanium (Ti).
), chromium (Cr), or aluminum (Al). (3) The upper conductor layer is made of tellurium (Te), aluminum (
A method for manufacturing a matrix display device according to claim 1, wherein the matrix display device is made of Al), chromium (Cr), or titanium (Ti). (4) The method for manufacturing a matrix display device according to claim (1), wherein the mask is made of a magnetic metal, and the mask is attached to the substrate by magnetic attraction. (5) The method for manufacturing a matrix display device according to claim (1), wherein the mask is made of a magnetic metal and is attached to the substrate by magnetic attraction through a spacer.