JPS62249365A - Sun light storage battery - Google Patents
Sun light storage batteryInfo
- Publication number
- JPS62249365A JPS62249365A JP61092710A JP9271086A JPS62249365A JP S62249365 A JPS62249365 A JP S62249365A JP 61092710 A JP61092710 A JP 61092710A JP 9271086 A JP9271086 A JP 9271086A JP S62249365 A JPS62249365 A JP S62249365A
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- layer
- negative electrode
- solid electrolyte
- positive electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010949 copper Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 239000007784 solid electrolyte Substances 0.000 claims abstract description 21
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 238000010248 power generation Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910018030 Cu2Te Inorganic materials 0.000 abstract description 14
- 238000010276 construction Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- -1 Cu+ ion Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
- H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
- H01M10/0562—Solid materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/46—Accumulators structurally combined with charging apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体のｐ／ｎ接合の光起電力を使った太陽
電池より得られる電力を固体電解質二次電池を用いて蓄
電する太陽光蓄電池に関し、さらに詳しくは、前記ｐ／
ｎ接合を構成するｐ型半導体であるＣｕ２ＴｅがＣｕ＋
イオン導電性固体電解質を用いる前記固体電解質二次電
池の正極を兼ねる新規な太陽光蓄電池に関する。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a solar storage battery that uses a solid electrolyte secondary battery to store electric power obtained from a solar cell using photovoltaic power of a semiconductor p/n junction. , More specifically, the p/
Cu2Te, which is a p-type semiconductor constituting an n-junction, is Cu+
The present invention relates to a novel solar storage battery that also serves as the positive electrode of the solid electrolyte secondary battery using an ion-conductive solid electrolyte.
従来の技術
半導体のｐ／ｎ接合の光起電力を使う太陽電池は、それ
自体蓄電機能がないため、太陽電池単独では光が照射さ
れている間しか電力を供給することが出来ない。Conventional Solar Cells Using P/N Junction Photovoltaic Power of a Semiconductor Does Not Have a Power Storage Function, Therefore, Solar Cells Alone Can Only Supply Electric Power While Being Irradiated with Light.
又、光の照射がない場合でも電力を供給するために、従
来太陽電池は、ニッケル・カドミウム電池といった二次
電池と組み合わせた太陽光蓄電装置として最も用いられ
ている。このような目的に用いられる二次電池として、
在来の液体電解質を用いるニッケル・カドミウム電池等
に換えて、電池構成要素がすべて固体状であり原理的に
液もれがなく、薄形、小形化が容易な固体電解質二次電
池を用いることで、太陽電池と二次電池の一体化。Furthermore, in order to supply power even when there is no light irradiation, conventional solar cells are most commonly used as solar power storage devices in combination with secondary batteries such as nickel-cadmium batteries. As a secondary battery used for such purposes,
Instead of conventional nickel-cadmium batteries that use liquid electrolytes, use solid electrolyte secondary batteries, which have all battery components in a solid state, have no leakage in principle, and can be easily made thin and compact. So, the integration of solar cells and secondary batteries.
パンケージの共有化等がはかれるなど数々の従来にはな
い利点が得られる。A number of advantages not previously available can be obtained, such as the ability to share pan cages.
本発明者らは共に、このような固体電解質二次電池のう
ち、Ｃｕ イオン導電性固体電解質を用いる二次電池と
太陽電池とを複合化した太陽光蓄電装置を提案した。太
陽電池の単セル数と、二次電池の単セル数を好適に組み
合せることで、蓄電効率の優れた装置とすることができ
るという利点をこの装置は有してはいる。The present inventors together proposed a solar power storage device that combines a solar cell and a secondary battery using a Cu 2 ion conductive solid electrolyte among such solid electrolyte secondary batteries. This device has the advantage that by suitably combining the number of single cells of the solar cell and the number of single cells of the secondary battery, it is possible to obtain a device with excellent power storage efficiency.
発明が解決しようとする問題点
しかし、このような太陽光蓄電装置は、正極と負極と電
解質とにより構成される二次電池と、半導体のｐ／ｎ接
合で構成される太陽電池との２つの独立した素子をあく
までも複合化したもので、各々独立した製造プロセスで
作られた各素子を同一パッケージ内に納めたものである
。構成要素あるいは材料としては少なくとも正極、負極
、固体電解質材料の３つの他に、ｐ型半導体、ｎ型半導
体の５つの要素が必要である。また、電圧の好適な組み
合せを得るためには、各々複数個の素子が必要となる。Problems to be Solved by the Invention However, such solar power storage devices have two types: a secondary battery composed of a positive electrode, a negative electrode, and an electrolyte, and a solar cell composed of a p/n junction of semiconductors. It is essentially a composite of independent elements, with each element manufactured using an independent manufacturing process housed in the same package. As constituent elements or materials, at least five elements are required: a positive electrode, a negative electrode, a solid electrolyte material, and a p-type semiconductor and an n-type semiconductor. Further, in order to obtain a suitable combination of voltages, a plurality of elements are each required.
出来上がった装置に高信頼性を期待するとき、構成要素
はできるだけ少ない方が望ましいし、また、太陽電池と
二次電池とが連続したひとつの製造プロセスで構成され
ることが望ましい０
問題点を解決するだめの手段
本発明は、太陽電池を構成するｐ型半導体が、二次電池
の正極としても作用できるＣ ｕ ２ Ｔ ｅを正極用
いることで、最小限必要な構成要素を５つから４つに減
らすことのできる太陽光蓄電池を提供するものである。When expecting high reliability from the finished device, it is desirable to have as few components as possible, and it is also desirable that the solar cell and the secondary battery be constructed in one continuous manufacturing process.0 Problem solved The present invention reduces the minimum number of required components from five to four by using Cu 2 Te as a positive electrode for the p-type semiconductor that constitutes the solar cell, which can also function as the positive electrode of a secondary battery. This provides a solar storage battery that can reduce the amount of energy used.
まだ、太陽電池と二次電池とが連続したひとつの製造プ
ロセスで構成することが了能となる。It is still possible to configure solar cells and secondary batteries in one continuous manufacturing process.
すなわち、本発明に従う太陽光蓄電池は、ｐ型半導体で
あるＣｕ２Ｔｅを正極とし、Ｃｕ イオン導電性固体電
解質と、金属銅を主体とする負極から成る起電力が約０
．２５ Ｖの固体電解質二次電池である蓄電部ａと、ｎ
型半導体であるｃａ’ｒｅと、前記正極としても作用す
るｐ型半導体であるＣｕ２Ｔｅとの接合により形成され
るｐ／ｎ接合から成る起電力がｏ、ｓ ｏ−ｏ、ｅ ｏ
ｖである発電部すよｐ構成される。ＣｄＴｅ層の上に
Ｃｕ２Ｔｅ層が形成され、さらにその上に順次形成され
たＣｕ＋イオン導電性固体電解質層と、金属銅を主体と
する負極層（Ｃｕ 負極層と略す）の４層より成り、Ｃ
ｄＴｅ層とＣｕ負極層とを電気的に接続することで本発
明による太陽光蓄電池が形成される。Ｃｕ負極層は、光
がｐ／ｎ接合部まで達することができるように、網目状
、格子状、あるいはくし状等に形成される。That is, the solar storage battery according to the present invention has an electromotive force of about 0, which is composed of a positive electrode made of Cu2Te, which is a p-type semiconductor, a Cu ion conductive solid electrolyte, and a negative electrode mainly made of metallic copper.
．． Power storage units a and n are 25 V solid electrolyte secondary batteries.
The electromotive force formed by the p/n junction formed by the junction of ca're, which is a type semiconductor, and Cu2Te, which is a p-type semiconductor that also acts as the positive electrode, is o, so-o, e o.
The power generation section p is composed of v and p. It consists of four layers: a Cu2Te layer is formed on the CdTe layer, a Cu + ion conductive solid electrolyte layer is sequentially formed on top of the Cu2Te layer, and a negative electrode layer (abbreviated as Cu negative electrode layer) mainly made of metallic copper.
A solar storage battery according to the present invention is formed by electrically connecting the dTe layer and the Cu negative electrode layer. The Cu negative electrode layer is formed in a mesh, lattice, or comb shape so that light can reach the p/n junction.
Ｃｕ＋イオン導電性固体電解質層としては、光の透過性
を考慮して、一般式、
ＲｂＣｕ４Ｉ、、−ｘＣＪ３＋ｘ（Ｘ＝ ０．２５〜０
．７５ ）で表わされるＯｕ＋イオン導電性固体電解質
が好適に用いられる。The Cu+ ion conductive solid electrolyte layer has the general formula RbCu4I, -xCJ3+x (X=0.25~0
．． 75) is preferably used.
第３図は、石英ガラス板上に５ Ｘ １０＝ Ｔｏｒｒ
の真空下で抵抗加熱法で形成した前述の一般式でｘ＝ｏ
、ｓであるＲｂＣｕ４１１，５ＣＧ、５膜（膜厚３．５
μ）の光吸収スペクトルを示したものである。４６０ｎ
ｍ以下で吸収があシ太陽光の紫外部の光は通しにくいけ
れど実用上問題なく使用することができる。また、Ｘ＝
０．２６〜０．７５の範囲では、ＲｂＣｕ ａ Ｉ ２
−ｘｃ ｌ ３＋、 の分解電圧は、約ｏ、ｅｏｖであ
シ、長期間に渡って発電部すより０．５〜０．６ Ｖの
電圧が蓄電部ａの充電のために印加された場合でも、Ｃ
ｕ イオン導電性固体電解質層の分解による蓄電部乙の
劣化が生じる恐れはきわめて少ない。Figure 3 shows 5 x 10 = Torr on a quartz glass plate.
In the above general formula formed by resistance heating method under vacuum of
, s RbCu411,5CG, 5 films (thickness 3.5
The figure shows the optical absorption spectrum of μ). 460n
Although it is difficult for light in the ultraviolet region of sunlight to pass through, it can be used without any practical problems. Also, X=
In the range of 0.26 to 0.75, RbCu a I 2
The decomposition voltage of -xc l 3+, is approximately o, eov, and when a voltage of 0.5 to 0.6 V is applied to the power generation unit for a long period of time to charge the power storage unit a. But, C
There is very little risk that the power storage unit B will deteriorate due to decomposition of the ion conductive solid electrolyte layer.
次に、ＣｄＴｅ層とＣｕ負極層との電気的接続は、必要
に応じ、順方向の電圧降下が０．１〜０．３層程度のダ
イオードを介して行うことができる。このようなダイオ
ードとしては通常のゲルマニウムダイオードが使用でき
る。接続はＣｄＴｅ層からＣｕ負極層に向って電子が流
れる方向が順方向となるようになされる。こうすること
で、光照射がない場合、蓄電部乙にたくわえられた電気
が、発電部すを通して漏れるのを有効に防止することが
できる。Next, the CdTe layer and the Cu negative electrode layer can be electrically connected, if necessary, via a diode with a forward voltage drop of about 0.1 to 0.3 layers. An ordinary germanium diode can be used as such a diode. The connection is made such that the direction in which electrons flow from the CdTe layer to the Cu negative electrode layer is the forward direction. By doing so, it is possible to effectively prevent the electricity stored in the power storage unit B from leaking through the power generation unit B when there is no light irradiation.
作用
光が照射している場合、発電部すで生じた電圧０．５０
〜ｏ、ｅｏＶの電子は、外部負荷へ送られそこで利用消
費されるとともに、その一部はＣｄＴａ層とＣｕ負極の
電気接続部を通ってＣｕ負極に至り、ここで正極層であ
るＣｕ２Ｔｅ層より遊離して＋
Ｃｕ イオン導電性固体電解質層を通ってきたＣｕ＋イ
オンと結合してＣｕとしてＣｕ負極層に蓄えられる。光
が照射していない場合は、このようにして蓄電部已に蓄
えられた電気はＣｕ２Ｔｅ層を正極とし、Ｃｕ負極層を
負極とする蓄電部ａより外部負荷へ供給することができ
る。When the working light is irradiating, the voltage generated in the power generation section is 0.50
The electrons at ~o, eoV are sent to an external load where they are used and consumed, and some of them pass through the electrical connection between the CdTa layer and the Cu negative electrode to reach the Cu negative electrode, where they are transferred from the Cu2Te layer which is the positive electrode layer. The liberated +Cu+ ions combine with the Cu+ ions that have passed through the conductive solid electrolyte layer and are stored as Cu in the Cu negative electrode layer. When no light is irradiated, the electricity thus stored on the side of the power storage unit can be supplied to an external load from the power storage unit a, which has the Cu2Te layer as the positive electrode and the Cu negative electrode layer as the negative electrode.
以下、実施例により説明する。Examples will be explained below.
実施例
第１図は本発明の実施例の１つである太陽光蓄電池の構
造を示す断面略図である。Embodiment FIG. 1 is a schematic cross-sectional view showing the structure of a solar storage battery that is one of the embodiments of the present invention.
厚さ０．２ｍｍのモリブデン（ＭＯ）箔１の上に真空蒸
着法で厚さ２５μ、大きさｓｘＥ５ｍ＋ｎ角のＣｄＴａ
層２を形成し、さらにその上に順次真空蒸着法で、厚さ
０．２μのＣｕ２Ｔｅ層３．厚さ３．５μのＲｂＧｕ４
Ｉ ｔｓＣ１５，５より成るＣｕ イオン導電性固体電
解質層４゜厚さ０．３μの金属銅膜より成るＣｕ負極層
５がくし状に形成される。６は片面に導電性の酸化イン
ジウム、スズの薄膜６ａ′ｓ？よび６ｂを有するガラス
板であり、Ｃｕ負極層５と導電性薄膜６２ＬおよびＣｕ
２ Ｔ ｅ層３の一部と導電性薄膜６ｂとが各々電気
的に接続するように配置されている。６ＣはＣｕ２Ｔｅ
層３と導電性薄膜６ｂとを電気的に接続するためのｐｔ
ペーストより成る導電性塗料によりＣｕ２Ｔａ層３の上
に形成した電気接続用端子である。CdTa with a thickness of 25μ and a size sxE5m+n square is deposited on a molybdenum (MO) foil 1 with a thickness of 0.2mm by vacuum evaporation method.
Layer 2 is formed, and then a Cu2Te layer 3 with a thickness of 0.2 μm is sequentially deposited on top of the layer 2 by vacuum evaporation. RbGu4 with a thickness of 3.5μ
A Cu ion conductive solid electrolyte layer 4 made of I tsC15.5 and a Cu negative electrode layer 5 made of a metal copper film having a thickness of 0.3 μm are formed in a comb shape. 6 is a thin film of conductive indium oxide and tin on one side 6a's? and 6b, and includes a Cu negative electrode layer 5, a conductive thin film 62L, and a Cu negative electrode layer 5.
A part of the 2Te layer 3 and the conductive thin film 6b are arranged so as to be electrically connected to each other. 6C is Cu2Te
PT for electrically connecting layer 3 and conductive thin film 6b
This is an electrical connection terminal formed on the Cu2Ta layer 3 using a conductive paint made of paste.
ガラス板６とモリブデン箔１とはエポキシ樹脂系接着剤
子により接着されている。８はゲルマニウムダイオード
であυ、図中、ダイオードの回路記号で示したように、
ＣｄＴａ層２から電子がＣｕ負極層５へ流れ込むように
接続されている。ｅＰ９は■極端子、１０はθ極端子で
ある。The glass plate 6 and the molybdenum foil 1 are bonded together using an epoxy resin adhesive. 8 is a germanium diode υ, as shown by the diode circuit symbol in the figure,
The CdTa layer 2 is connected so that electrons flow into the Cu negative electrode layer 5. eP9 is a ■ pole terminal, and 10 is a θ pole terminal.
第２図はこのような太陽光蓄電池を３０分間太陽光にで
らした後、暗所で■極端子９とｅ極端子１０を通して２
０’Ｃで６０μ人の一定電流で３０分間放電した際の■
極端子ｅとθ極端子間の電圧変化を示したものである。Figure 2 shows that after exposing such a solar storage battery to sunlight for 30 minutes, it is connected to
■ When discharged for 30 minutes with a constant current of 60μ at 0'C
It shows the voltage change between the pole terminal e and the θ pole terminal.
図中、１ｏサイクル目。In the figure, the 10th cycle.
１００サイクル目とあるのは、３０分間太陽光による充
電を行なった後、６０μ人で３０分間放電する充、放電
サイクルを１０サイクル、１００サイクルくシ返した際
の放電時の端子間電圧の変化を示したものである。１ｏ
Ｏサイクル後でもほとんど初期の特性と変りない放電特
性を与える。The 100th cycle refers to the change in voltage between the terminals during discharge when the charging and discharging cycles are repeated for 10 and 100 cycles after being charged by sunlight for 30 minutes and then discharged for 30 minutes by a 60μ person. This is what is shown. 1o
Even after the O cycle, the discharge characteristics are almost the same as the initial characteristics.
発明の効果
以上本発明に従えば、太陽光発電部のｐ型半導体である
Ｃｕ２Ｔｅを、固体電解質二次電池より成る蓄電部の正
極としても作用させることで、構成要素の数を従来の６
つから４つに減じた太陽光蓄電池を提供できる。Effects of the Invention According to the present invention, by making Cu2Te, which is a p-type semiconductor in the solar power generation section, also act as the positive electrode of the power storage section consisting of a solid electrolyte secondary battery, the number of components can be reduced to 6 compared to the conventional one.
It is possible to provide solar storage batteries reduced from one to four.
第１図は本発明の実施例の１つである太陽光蓄電池の断
面構造を示す略図、第２図は実施例の太陽光蓄電池の放
電特性を示す図、第３図は本発明の太陽光蓄電池に用い
られるＧｕ イオノ導電性固体電解質薄膜の光吸収ス
ペクトルを示す図である。
１・・・・・・モリブデン箔、２・・・・・・ＣｄＴｅ
層、３・・・・・・Ｃｕ２Ｔｅ層、４・・・・・・Ｃｕ
イオン導電性固体電解質層、６・・・・・・Ｃｕ負極
層。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名／−
−−モ１ノプデン箔
２−−− ＣｔＴｅ層
３−−− Ｃｕ−ｚ ７ａＪ
第２図
Ｏｆｏ ２０ ３０ガＱ叱時間（分
ジFIG. 1 is a schematic diagram showing the cross-sectional structure of a solar storage battery that is one of the embodiments of the present invention, FIG. 2 is a diagram showing the discharge characteristics of the solar storage battery of the embodiment, and FIG. FIG. 2 is a diagram showing a light absorption spectrum of a Gu ionoconductive solid electrolyte thin film used in a storage battery. 1... Molybdenum foil, 2... CdTe
Layer, 3...Cu2Te layer, 4...Cu
Ionic conductive solid electrolyte layer, 6...Cu negative electrode layer. Name of agent: Patent attorney Toshio Nakao and 1 other person/-
--Monoden foil 2---- CtTe layer 3--- Cu-z 7aJ Figure 2 Ofo 20 30g
Claims (3)
＾＋イオン導電性固体電解質と、金属銅を主体とする負
極とにより構成される蓄電部と、（ｂ）ｎ型半導体Ｃｄ
Ｔｅと、前記蓄電部（ａ）の正極であるｐ型半導体Ｃｕ
＿２Ｔｅとの接合により形成されるｐ／ｎ接合より成る
発電部とにより構成され、前記ｎ型半導体ＣｄＴｅと前
記金属銅を主体とする負極とが電気的に接続されている
ことを特徴とする太陽光蓄電池。(1) (a) P-type semiconductor Cu_2Te is used as the positive electrode, Cu
^+ A power storage unit composed of an ion-conductive solid electrolyte and a negative electrode mainly made of metallic copper, and (b) an n-type semiconductor Cd.
Te and the p-type semiconductor Cu which is the positive electrode of the power storage unit (a).
and a power generation section consisting of a p/n junction formed by joining with _2Te, and the solar cell is characterized in that the n-type semiconductor CdTe and the negative electrode mainly made of metal copper are electrically connected. Photoacid battery.
がｎ型半導体ＣｄＴｅから金属銅を主体とする負極へ向
かって電子が流れる方向を順方向として、ダイオードを
介して電気的に接続されていることを特徴とする特許請
求第１項記載の太陽光蓄電池。(2) The n-type semiconductor CdTe and the negative electrode mainly made of metal copper are electrically connected via a diode with the direction in which electrons flow from the n-type semiconductor CdTe toward the negative electrode mainly made of metal copper as the forward direction. The solar storage battery according to claim 1, characterized in that:
Ｃｕ＿４Ｉ＿２＿−＿ｘＣｌ＿３＿＋＿ｘ（ｘ＝０．２
５〜０．７５）で表わされる化合物であることを特徴と
する特許請求の範囲第１項又は第２項記載の太陽光蓄電
池。(3) Cu^+ ion conductive solid electrolyte has the general formula, Rb
Cu_4I_2_-_xCl_3_+_x(x=0.2
5-0.75), the solar storage battery according to claim 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61092710A JPH07118332B2 (en) | 1986-04-22 | 1986-04-22 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61092710A JPH07118332B2 (en) | 1986-04-22 | 1986-04-22 | Solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62249365A true JPS62249365A (en) | 1987-10-30 |
| JPH07118332B2 JPH07118332B2 (en) | 1995-12-18 |
Family
ID=14062020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61092710A Expired - Lifetime JPH07118332B2 (en) | 1986-04-22 | 1986-04-22 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07118332B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5354996A (en) * | 1976-10-29 | 1978-05-18 | Agency Of Ind Science & Technol | Productin of solar battery |
| JPS5766868U (en) * | 1980-10-08 | 1982-04-21 |
-
1986
- 1986-04-22 JP JP61092710A patent/JPH07118332B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5354996A (en) * | 1976-10-29 | 1978-05-18 | Agency Of Ind Science & Technol | Productin of solar battery |
| JPS5766868U (en) * | 1980-10-08 | 1982-04-21 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07118332B2 (en) | 1995-12-18 |
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