JPS62247577A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPS62247577A JPS62247577A JP61090437A JP9043786A JPS62247577A JP S62247577 A JPS62247577 A JP S62247577A JP 61090437 A JP61090437 A JP 61090437A JP 9043786 A JP9043786 A JP 9043786A JP S62247577 A JPS62247577 A JP S62247577A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- znse
- emitting diode
- light emitting
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- NVMVLBOIYVUMOZ-UHFFFAOYSA-N lithium arsenide Chemical compound [Li][As]([Li])[Li] NVMVLBOIYVUMOZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000001451 molecular beam epitaxy Methods 0.000 abstract description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 10
- 239000011159 matrix material Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は発光ダイオードの構造に関し、特にセレン化亜
鉛半導体を用いた高効率の青色発光ダイオードの構造に
関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to the structure of a light emitting diode, and more particularly to the structure of a highly efficient blue light emitting diode using a zinc selenide semiconductor.
従来の技術
■−■族化合物半導体であるセレン化亜鉛（ＺｎＳａ）
は、青色発光ダイオードの材料として有望である。従来
、このＺｎ５ｅを用いた発光ダイオードとして第２図に
示すような構造の素子が考案されている〔例えばジャパ
ニーズ ジャーナルオプ アプライド フィジックス（
、ｒａｐａｎｅｓｅＪｏｕｒｎａｌ ｏｆ Ａｐｐ
ｌｉ６ｄ Ｐｈｙｓｉｃｓ） 誌、第１６巻第１号
（昭和５２年）Ｐ、７７−８４〕。Conventional technology Zinc selenide (ZnSa), a ■-■ group compound semiconductor
is a promising material for blue light-emitting diodes. Conventionally, an element with a structure as shown in Fig. 2 has been devised as a light emitting diode using this Zn5e [for example, Japanese Journal Op Applied Physics (
,rapaneseJournal of App
li6d Physics), Vol. 16, No. 1 (1977) P, 77-84].
同図で１２はＮ型Ｚｎ５ｅ単結晶、１３は二酸化硅素（
ＳｉＯ□）からなる絶縁層、４は金属電極、６はオーム
性電極である。この素子の両電極間に、金属電極４が正
となるような電圧を印加すると、トンネル効果により金
属電極からＮ型Ｚｎ５ｅ単結晶中へ正孔が注入さγし、
これが自由電子と再結合して青色の発光を生じる。In the figure, 12 is N-type Zn5e single crystal, 13 is silicon dioxide (
4 is a metal electrode, and 6 is an ohmic electrode. When a voltage is applied between both electrodes of this element so that the metal electrode 4 becomes positive, holes are injected from the metal electrode into the N-type Zn5e single crystal due to the tunnel effect.
This recombines with free electrons to produce blue light.
発明が解決しようとする問題点
しかしながら上述のような従来の構成では、絶縁層の素
材がＺｎ５ｅとは全く異なるため、両者を連続的に形成
することは不可能である。このため両者の界面に不純物
が堆積したり、欠陥が発生することになり、その結果注
入された正孔が有効に再結合せず、発光効率が低下する
という問題点があった。Problems to be Solved by the Invention However, in the conventional structure as described above, since the material of the insulating layer is completely different from Zn5e, it is impossible to form both continuously. For this reason, impurities are deposited or defects are generated at the interface between the two, resulting in a problem that the injected holes are not effectively recombined and the luminous efficiency is reduced.
本発明はかかる点に濫みてなされたもので、高効率のＺ
ｎ Ｓ ｅ”青色発光ダイオードを提供することを目
的としている。The present invention has been made to take advantage of these points, and is a highly efficient Z
The present invention aims to provide an "n S e" blue light emitting diode.
問題点を解決するだめの手段
本発明は上記問題点を解決するため、絶縁層をもＺｎ５
ａ単結晶で構成し、Ｎ型Ｚｎ５ｅ層と絶縁層を連続的に
形成し得るようにしたものである。Means for Solving the Problems In order to solve the above problems, the present invention also uses Zn5 for the insulating layer.
It is constructed of a single crystal, and is designed to allow continuous formation of an N-type Zn5e layer and an insulating layer.
作用
本発明は上記の手段により、Ｎ型Ｚｎ５ｅ層と絶縁層の
界面を不純物や欠陥のない良好な状態にし、注入された
正孔を有効に発光に寄与せしめて発光効率を高めるもの
である。Operation The present invention uses the above-mentioned means to make the interface between the N-type Zn5e layer and the insulating layer in a good condition free of impurities and defects, and allows the injected holes to effectively contribute to light emission, thereby increasing the light emission efficiency.
実施例 以下、本発明を実施例により詳細に説明する。Example Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は、本発明による発光ダイオードの構造を模式的
に示す断面図である。同図において、１はＮ型砒化ガリ
ウム（ＧａムＳ）単結晶基板、２は前記基板１上にエピ
タキシャル成長させたＮ型Ｚｎ５ｅ層、３はさらにその
上にエピタキシャル成長させた絶縁性Ｚｎ５ｅ層、４は
金属電極層、６はオーム性電極である。ここで、基板に
ＧａＡｇを用いるのは、格子定数がＺｎ５ｅとほぼ同一
であり、良好なＺｎ５ａ単結晶層をエピタキシャル成長
させることができるためである。このエピタキシャル成
長の方法としては、例えば分子線エピタキシー法が好適
である。この場合、結晶母体原料のＺｎ５ｅと共に適切
な不純物を蒸発させ、その種類を変えることによりＮ型
Ｚｎ５ｅ層２と絶縁性Ｚｎ５ｅ層３を順次連続的に成長
させることができる。またＭｏｃｖｎ法などの気相成長
法でも不純物原料ガスを切シ換えることによシ、同様の
成長を行うことができる。ここで、Ｎ型Ｚｎ５ｅ層に添
加する不純物としては、アルミニウム、ガリウム。FIG. 1 is a cross-sectional view schematically showing the structure of a light emitting diode according to the present invention. In the figure, 1 is an N-type gallium arsenide (GaM S) single crystal substrate, 2 is an N-type Zn5e layer epitaxially grown on the substrate 1, 3 is an insulating Zn5e layer epitaxially grown thereon, and 4 is an N-type Zn5e layer epitaxially grown on the substrate 1. The metal electrode layer 6 is an ohmic electrode. Here, GaAg is used for the substrate because its lattice constant is almost the same as that of Zn5e, and a good Zn5a single crystal layer can be epitaxially grown. As a method for this epitaxial growth, for example, molecular beam epitaxy is suitable. In this case, the N-type Zn5e layer 2 and the insulating Zn5e layer 3 can be successively grown in sequence by evaporating appropriate impurities together with Zn5e, which is the crystal host raw material, and changing the types of impurities. Further, similar growth can be performed using a vapor phase growth method such as the Mocvn method by switching the impurity source gas. Here, aluminum and gallium are used as impurities added to the N-type Zn5e layer.
インジウム、弗素、塩素の何れかが好適である。Any one of indium, fluorine, and chlorine is suitable.
このＮ型Ｚｎ５ｅ層２の電子密度は高効率を得るために
、ｅｓ ｘ １ｏ’Ｖ ｃｒＡ以上とすることが望まし
い。In order to obtain high efficiency, the electron density of this N-type Zn5e layer 2 is desirably greater than es x 1o'V crA.
また絶縁性ｚｎｓｅ層３は、Ｚｎ５ａの原料が高純度で
あれば不純物を全く添加しなくても得られるが、窒素、
燐、砒素、リチウム、ナトリウムの何れかを添加すると
より高抵抗化し、好適である。Furthermore, the insulating Znse layer 3 can be obtained without adding any impurities if the Zn5a raw material is of high purity;
It is preferable to add any one of phosphorus, arsenic, lithium, and sodium to increase the resistance.
上記Ｎ型Ｚｎ５ｅ層２の厚さは１μｍ以上とすることが
望ましい。これよりも薄い場合には、結晶性の低下のた
め発光効率が低くなることがある。また絶縁性Ｚｎ５ｅ
層３の厚さは５０〜５００オングストロームの範囲内に
選ぶことが望ましい。この範囲よりも薄い場合には電圧
印加時に絶縁破壊をおこすことがあり、また厚い場合に
はトンネル効果による電流が流れにくくなり、効率が低
下する。The thickness of the N-type Zn5e layer 2 is preferably 1 μm or more. If it is thinner than this, the luminous efficiency may decrease due to a decrease in crystallinity. Also insulating Zn5e
The thickness of layer 3 is preferably selected within the range of 50 to 500 angstroms. If it is thinner than this range, dielectric breakdown may occur when a voltage is applied, and if it is thicker, it becomes difficult for current to flow due to the tunnel effect, resulting in a decrease in efficiency.
なお、金属電極層４の材料としては、正孔の注入効率を
高めるためなるべく仕事関数の大きい金属が望ましく、
特に金が好適である。またその厚さは、発生した光を効
率よく外部に取り出すため、導電性を損わない範囲でな
るべく薄いことが望ましく、１００〜５ｏｏオングスト
ロームとするのが好適である。Note that as the material for the metal electrode layer 4, a metal with as large a work function as possible is preferable in order to increase the hole injection efficiency.
Gold is particularly suitable. Further, in order to efficiently extract the generated light to the outside, the thickness is preferably as thin as possible without impairing conductivity, and is preferably 100 to 50 angstroms.
以上に述べた発光ダイオードの動作原理は従来例と同様
であるが、本発明の場合にはＮ型Ｚｎ５ｅ層２と絶縁性
Ｚｎ５ｅ層３が連続的にエピタキシャル成長されている
ため界面に不純物や欠陥が存在せず、金属電極層４から
注入された正孔が有効に発光に寄与し、高い発光効率が
得られることになるＯ
発明の効果
以上述べてきたように、本発明によれば、界面における
正孔注入効率の低下を防止し、高い発光効率を有するＺ
ｎ５ｅ青色発光ダイオードを実現することができ、実用
的にきわめて有用である。The operating principle of the light emitting diode described above is the same as that of the conventional example, but in the case of the present invention, since the N-type Zn5e layer 2 and the insulating Zn5e layer 3 are epitaxially grown continuously, impurities and defects are not present at the interface. O does not exist, and the holes injected from the metal electrode layer 4 effectively contribute to light emission, resulting in high luminous efficiency. Z that prevents a decrease in hole injection efficiency and has high luminous efficiency
It is possible to realize an N5E blue light emitting diode, which is extremely useful in practice.
第１図は本発明の一実施例の発光ダイオードを示す断面
図、第２図は従来の発光ダイオードを示す断面図である
。
１・・・・・・Ｎ型ＧａＡｓ単結晶基板、２・・・・・
・Ｎ型Ｚｎ５ｅ層、３・・・・・絶縁性Ｚｎ５ａ層、４
・・・・・・金属電極層、５・・・・・オーム性電極層
、１２・・・・・・Ｎ型Ｚｎ５ｅ単結晶、１３・・・・
・・５ｉｎ２絶縁層。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名１〜
情’ｊ ＧｃＬＡｓ ？！＊ｒａｋ第１図 ２−
、・１Ｊ４
３−・１株ヰ七５４
十−−−會涜しｔ掻槽
Ｓ−゛χ−４扛Ｉｔｎ
第２図 １゜−１−９９□。５６細。FIG. 1 is a sectional view showing a light emitting diode according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional light emitting diode. 1... N-type GaAs single crystal substrate, 2...
・N-type Zn5e layer, 3...Insulating Zn5a layer, 4
...Metal electrode layer, 5...Ohmic electrode layer, 12...N-type Zn5e single crystal, 13...
...5in2 insulation layer. Name of agent: Patent attorney Toshio Nakao and 1 other person 1~
Love'j GcLAs? ! *rak Figure 1 2-
, ・1J4 3-・1 stock ヰ754 10--The meeting S-゛χ-4扛Itn Fig. 2 1゜-1-99□. 56 thin.
Claims (8)
ャル成長させたＮ型セレン化亜鉛層及び絶縁性セレン化
亜鉛層を備え、前記絶縁性セレン化亜鉛層の表面の少く
とも一部に金属電極層を設けたことを特徴とする発光ダ
イオード。(1) An N-type zinc selenide layer and an insulating zinc selenide layer are sequentially epitaxially grown on an N-type gallium arsenide single crystal substrate, and a metal electrode layer is formed on at least a part of the surface of the insulating zinc selenide layer. A light emitting diode characterized by being provided with.
ム、ナトリウムのうち少くとも一種が不純物として添加
されていることを特徴とする特許請求の範囲第１項記載
の発光ダイオード。(2) The light emitting diode according to claim 1, wherein at least one of nitrogen, phosphorus, lithium arsenide, and sodium is added as an impurity to the insulating zinc selenide layer.
ングストロームとしたことを特徴とする特許請求の範囲
第１項記載の発光ダイオード。(3) The light emitting diode according to claim 1, wherein the insulating zinc selenide layer has a thickness of 50 to 500 angstroms.
、インジウム、弗素、塩素のうち少くとも一種が不純物
として添加されていることを特徴とする特許請求の範囲
第１項記載の発光ダイオード。(4) The light emitting diode according to claim 1, wherein at least one of aluminum, gallium, indium, fluorine, and chlorine is added as an impurity to the N-type zinc selenide layer.
×１０＾１＾６／ｃｍ＾３以上としたことを特徴とする
特許請求の範囲第１項記載の発光ダイオード。(5) The electron density of the N-type zinc selenide layer at room temperature is 5
The light-emitting diode according to claim 1, characterized in that the light-emitting diode is at least ×10^1^6/cm^3.
たことを特徴とする特許請求の範囲第１項記載の発光ダ
イオード。(6) The light emitting diode according to claim 1, wherein the thickness of the N-type zinc selenide layer is 1 micron or more.
求の範囲第１項記載の発光ダイオード。(7) The light emitting diode according to claim 1, wherein gold is used for the metal electrode layer.
ロームとしたことを特徴とする特許請求の範囲第１項記
載の発光ダイオード。(8) The light emitting diode according to claim 1, wherein the metal electrode layer has a thickness of 100 to 500 angstroms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61090437A JPS62247577A (en) | 1986-04-18 | 1986-04-18 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61090437A JPS62247577A (en) | 1986-04-18 | 1986-04-18 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62247577A true JPS62247577A (en) | 1987-10-28 |
Family
ID=13998583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61090437A Pending JPS62247577A (en) | 1986-04-18 | 1986-04-18 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62247577A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6528395B2 (en) | 2000-04-27 | 2003-03-04 | Sumitomo Electric Industries, Ltd. | Method of fabricating compound semiconductor device and apparatus for fabricating compound semiconductor device |
-
1986
- 1986-04-18 JP JP61090437A patent/JPS62247577A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6528395B2 (en) | 2000-04-27 | 2003-03-04 | Sumitomo Electric Industries, Ltd. | Method of fabricating compound semiconductor device and apparatus for fabricating compound semiconductor device |
| US6815316B2 (en) | 2000-04-27 | 2004-11-09 | Sumitomo Electric Industries, Ltd. | Apparatus for fabricating compound semiconductor device |
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