JPS62244166A - Manufacture of solid-state image sensor - Google Patents
Manufacture of solid-state image sensorInfo
- Publication number
- JPS62244166A JPS62244166A JP61089117A JP8911786A JPS62244166A JP S62244166 A JPS62244166 A JP S62244166A JP 61089117 A JP61089117 A JP 61089117A JP 8911786 A JP8911786 A JP 8911786A JP S62244166 A JPS62244166 A JP S62244166A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- photodetector
- image sensor
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 4
- 238000003384 imaging method Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 abstract description 18
- 206010047571 Visual impairment Diseases 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 101100115215 Caenorhabditis elegans cul-2 gene Proteins 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は信顛性を向上させた固体撮像装置の製造方法に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a solid-state imaging device with improved reliability.
本発明は、受光素子とキャリア転送手段を有する固体撮
像装置の製造方法に於いて、受光素子の一部を半導体基
体に設けた後、その一部を種結晶として半導体層を絶縁
層の上に成長させ、その成長層に受光素子を形成する製
造方法によって、残像が少なく、感度が良く、信顛性の
高い固体撮像装置を提供するものである。The present invention provides a method for manufacturing a solid-state imaging device having a light-receiving element and a carrier transfer means, in which a part of the light-receiving element is provided on a semiconductor substrate, and then a semiconductor layer is formed on an insulating layer using the part as a seed crystal. By using a manufacturing method in which a light receiving element is formed in the grown layer, a solid-state imaging device with little afterimage, high sensitivity, and high reliability is provided.
光電変換部と電荷転送部を同一平面上に配置した固体撮
像装置は従来から知られているが、この構造に於いては
受光面積を大きくするには限界があった。Solid-state imaging devices in which a photoelectric conversion section and a charge transfer section are arranged on the same plane have been known for some time, but this structure has a limit in increasing the light-receiving area.
受光感度をあげるためには受光面積を大きくする必要性
があるが、光電変換部と電荷転送部を上下に重ねてアモ
ルファスＳｉ （ａ−Ｓｉ ：Ｈ）又は多結晶Ｓｉを用
いた積層型センサが開発されている。この構成によれば
光電変換部を上部表面全面に設けることができるので受
光感度は向上する。第２図にそのセンサの単位画素の断
面構造図が示されている。In order to increase the light-receiving sensitivity, it is necessary to increase the light-receiving area, but a stacked sensor using amorphous Si (a-Si:H) or polycrystalline Si, in which the photoelectric conversion part and charge transfer part are stacked one on top of the other, can be used. being developed. According to this configuration, the photoelectric conversion section can be provided on the entire upper surface, so that the light receiving sensitivity is improved. FIG. 2 shows a cross-sectional structural diagram of a unit pixel of the sensor.
Ｐ層のａ−３ｉＣ：Ｈ層１０はＩＴＯ’Ｑｉ極１１から
ａ−ｓｉ：Ｉｌｌり９への電荷の注入を防止するための
バリヤ層であり、短波長光吸収による青感度劣化を防止
する層でもある。光電変換はｉ層であるａ−５ｉ：Ｈ層
９で行われ、発生した信号電荷は層内を走行して、第２
金属電極８に到達し、蓄積ダイオード２に蓄積される。The a-3iC:H layer 10 of the P layer is a barrier layer for preventing charge injection from the ITO'Qi electrode 11 to the a-si:Il layer 9, and prevents deterioration of blue sensitivity due to absorption of short wavelength light. It's also a layer. Photoelectric conversion is performed in the a-5i:H layer 9, which is the i layer, and the generated signal charges travel within the layer and are transferred to the second layer.
It reaches the metal electrode 8 and is stored in the storage diode 2.
ここにＩＭｉされた信号電荷は、トランスファゲート１
５に、パルス電圧を印加して垂直ＣＣＤ部３から読み出
される。読み出し部にインターライン転送ＣＣＤを用い
ているので、各画素に蓄積された信号電荷は、垂直ブラ
ンキング期間に垂直ＣＣＤ部３へ転送され、次のフィー
ルドの発生信号電荷が、蓄積ダイオード２に蓄積されて
いる間に外部に取り出される。（１９８３年テレビジョ
ン学会全国大会予稿集第４５．４６頁）
〔発明が解決しようとする問題点〕
ａ−Ｓｉ又は多結晶Ｓｉを用いた積層型置体操像装置の
開発によって、受光面積をそれ以前のイメージセンサに
比較して広くすることができるようにはなったが、アモ
ルファスＳｉ等の非単結晶半導体を用いている事に起因
して、残像が多く、装置の信頼性が低いという問題点は
依然として未解決であった。The signal charge IMi is transferred to the transfer gate 1.
5, a pulse voltage is applied and the data are read out from the vertical CCD section 3. Since an interline transfer CCD is used in the readout section, the signal charge accumulated in each pixel is transferred to the vertical CCD section 3 during the vertical blanking period, and the signal charge generated in the next field is accumulated in the storage diode 2. It is taken out while it is being stored. (Proceedings of the National Conference of the Television Society of Japan, 1983, pp. 45 and 46) [Problems to be solved by the invention] By developing a stacked stationary imager using a-Si or polycrystalline Si, it is possible to increase the light-receiving area by Although it has become wider than previous image sensors, there are problems with the use of non-single crystal semiconductors such as amorphous Si, which causes many afterimages and low reliability of the device. The issue remained unresolved.
本発明に於いては、受光素子とキャリア転送手段を有す
る固体撮像装置を得るのに、先ず受光素子の一部を箪結
晶半一体基体上に設け、その一部を種単結晶として絶縁
股上に半導体単結晶層を成長させ、その単結晶半導体層
に受光素子を形成して上記問題点を解決した。In the present invention, in order to obtain a solid-state imaging device having a light-receiving element and carrier transfer means, a part of the light-receiving element is first provided on a semi-integral crystal substrate, and a part of the light-receiving element is placed on an insulating crotch as a seed single crystal. The above problem was solved by growing a semiconductor single crystal layer and forming a light receiving element in the single crystal semiconductor layer.
本発明の固体撮像装置に於いては、受光素子及びキャリ
ア転送手段のいずれの能動素子も単結晶半導体内に形成
されるので、装置の特性は従来のａ−Ｓｉ又は多結晶中
に形成された装置に比較して格段と向上する。しかも受
光部側の半導体単結晶層は下側の半導体単結晶層の一部
を種結晶として絶縁層上に形成されて、その構造はＳ０
１構造となるので、各素子の分離が確実に行える。In the solid-state imaging device of the present invention, since both the active elements of the light receiving element and the carrier transfer means are formed in a single crystal semiconductor, the characteristics of the device are different from those formed in conventional a-Si or polycrystalline semiconductors. Much improved compared to other devices. Moreover, the semiconductor single crystal layer on the light receiving part side is formed on the insulating layer using a part of the lower semiconductor single crystal layer as a seed crystal, and its structure is S0.
Since it has a single structure, each element can be separated reliably.
先ず、第１図Ａに示すように、従来の製造方法により、
Ｐ型車結晶Ｓｉ基板ｌ内及び絶縁膜７内に、光電変換さ
れた電荷を保持しておく蓄積ダイオード部２及びその蓄
積電荷を転送する垂直ＣＣＤ部３を形成する。この固体
撮像装置の構成に於いては、第１ポリ電極４と第２ポリ
電極５が垂直ＣＣＤ部の転送電極を構成し、トランスフ
ァーゲート１５は蓄積ダイオード部２に蓄積された電荷
を垂直ＣＣＤ部３へ移動させる時に用いられる。First, as shown in FIG. 1A, by a conventional manufacturing method,
A storage diode section 2 for holding photoelectrically converted charges and a vertical CCD section 3 for transferring the accumulated charges are formed in the P-type wheel crystal Si substrate 1 and in the insulating film 7. In the configuration of this solid-state imaging device, the first polyelectrode 4 and the second polyelectrode 5 constitute transfer electrodes of the vertical CCD section, and the transfer gate 15 transfers the charges accumulated in the storage diode section 2 to the vertical CCD section. Used when moving to 3.
次に選択エピタキシャル成長法によって、Ｓｉ基板ｌ内
のＮ″領域種結晶としてＮ型半導体単結晶層１２を絶縁
膜７の上に成長させる。この後、この単結晶半導体層１
２を各画素毎に分離し、アクセプターを拡散させてＰ″
領域１３を形成する。このｐ４ｈｌ域１３の一部に透明
電極１４を設けてイメージセンサを完成させる。Next, by selective epitaxial growth, an N-type semiconductor single crystal layer 12 is grown on the insulating film 7 as an N'' region seed crystal in the Si substrate l.
2 for each pixel and diffuse the acceptors to form P''
A region 13 is formed. A transparent electrode 14 is provided in a part of this p4hl region 13 to complete the image sensor.
本発明の製造方法によって得られる固体撮像装置は、ア
モルファス半導体よりモビリティが２桁も高い単結晶半
導体を用いるので、従来の固体撮像装置に比較して残像
がより少なく、またアモルファス半導体等に見られる経
年変化による信頼性の低下もない。The solid-state imaging device obtained by the manufacturing method of the present invention uses a single crystal semiconductor whose mobility is two orders of magnitude higher than that of an amorphous semiconductor, so there is less afterimage compared to a conventional solid-state imaging device, and there is less afterimage, which is seen in amorphous semiconductors. There is no decrease in reliability due to aging.
単結晶半導体を採用して装置の能率が向上したために、
本発明の装置に於いては１５００本の水平解像度を得る
のに従来の装置の２７３．５１０本のそれに対しては１
／２の大きさで済み、本発明によってイメージセンサの
小型化が可能となった。Because the efficiency of equipment has improved by using single crystal semiconductors,
In the device of the present invention, a horizontal resolution of 1,500 lines is obtained, compared to 273.510 lines in the conventional device.
/2, and the present invention has made it possible to downsize the image sensor.
第１図Ａ、Ｂは本発明の固体撮像装置の製造方法を示す
。第２図は従来のａ−３ｉ＠層構造ＣＣ口を示す。
ｌ・・・基板 ２・・・蓄積ダイオード部
３・・・垂直ＣＣＤ部 ４・・・第１ポリ電極５
・・・第２ポリ電極 ６・・・第１金属電極（Ａｊ
）７・・・絶縁膜 ８・・・第２金属電極（
Ａｌ ）９−ａ−Ｓｉ：Ｈ（ｉ層） １Ｏ−ａ
−５ｉ：Ｈ（ｐ層）１１・・・ＩＴＯ電極 １
２・・・３０１層１３・・・Ｐ゛拡散層 １４・
・・透明電極１５・・・トランスファゲート1A and 1B show a method for manufacturing a solid-state imaging device according to the present invention. FIG. 2 shows a conventional a-3i@layer structure CC port. l...Substrate 2...Storage diode section 3...Vertical CCD section 4...First polyelectrode 5
...Second polyelectrode 6...First metal electrode (Aj
) 7... Insulating film 8... Second metal electrode (
Al)9-a-Si:H (i layer) 1O-a
-5i:H (p layer) 11...ITO electrode 1
2...301 layer 13...P゛diffusion layer 14.
...Transparent electrode 15...Transfer gate
Claims (1)
造方法において、 上記受光素子の一部を半導体基体に設け、 該一部を種として、半導体層を成長させ、 該半導体層に上記受光素子を形成することを特徴とする
固体撮像装置の製造方法。[Claims] A method for manufacturing a solid-state imaging device having a light-receiving element and a carrier transfer means, comprising: providing a part of the light-receiving element on a semiconductor substrate; using the part as a seed, growing a semiconductor layer; A method of manufacturing a solid-state imaging device, comprising forming the above-mentioned light-receiving element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61089117A JPS62244166A (en) | 1986-04-17 | 1986-04-17 | Manufacture of solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61089117A JPS62244166A (en) | 1986-04-17 | 1986-04-17 | Manufacture of solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62244166A true JPS62244166A (en) | 1987-10-24 |
Family
ID=13961947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61089117A Pending JPS62244166A (en) | 1986-04-17 | 1986-04-17 | Manufacture of solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62244166A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05169547A (en) * | 1991-12-25 | 1993-07-09 | Sanwa Kogyo Kk | Method of molding top-sealing for automobile |
-
1986
- 1986-04-17 JP JP61089117A patent/JPS62244166A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05169547A (en) * | 1991-12-25 | 1993-07-09 | Sanwa Kogyo Kk | Method of molding top-sealing for automobile |
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