JPS62240187A - Piercing method using laser light - Google Patents

Piercing method using laser light

Info

Publication number
JPS62240187A
JPS62240187A JP61083378A JP8337886A JPS62240187A JP S62240187 A JPS62240187 A JP S62240187A JP 61083378 A JP61083378 A JP 61083378A JP 8337886 A JP8337886 A JP 8337886A JP S62240187 A JPS62240187 A JP S62240187A
Authority
JP
Japan
Prior art keywords
hole
density
laser light
laser beam
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61083378A
Other languages
Japanese (ja)
Inventor
Takashi Ozawa
隆史 小澤
Ichiro Munakata
一郎 宗像
Ryoichi Ozaki
小崎 良一
Hiroaki Takagi
宏明 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61083378A priority Critical patent/JPS62240187A/en
Publication of JPS62240187A publication Critical patent/JPS62240187A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means

Abstract

PURPOSE:To maintain the temp. around a piercing part at a gentle gradient and to prevent cracking by irradiating low-density laser light below the energy density for piercing to the periphery of the piercing part. CONSTITUTION:The low-density laser light 12 is irradiated on the periphery of a through-hole 2 and the high-density laser light 13 is irradiated on the piercing part at the time of piercing a through-hole having about 0.1mm diameter to a circuit board 1. The energy density of the low-density laser light 12 is made lower than the energy density to pierce the through-hole 2 to the board 1. The ambient temp. of the through-hole 2 is heated to about the intermediate temp. of the boring temp. and room temp. by irradiating such low-density laser light 12, by which the temp. gradient around the piercing part is made gentle. The generation of microcracks around the piercing part is, therefore, prevented and the reliability of the circuit board 1 is improved.

Description

【発明の詳細な説明】 “  〔概要〕 レーザ光を用いセラミック基板等に穿孔を設けるに際し
、 穿孔エネルギ密度以下の低密度レーザ光を穿孔部の周囲
に照射することにより、 穿孔部周囲の温度勾配を緩やかにし、穿孔の周囲にクラ
ンクが生じないようにしたものである。
[Detailed Description of the Invention] “ [Summary] When perforating a ceramic substrate, etc. using a laser beam, the temperature gradient around the perforation is reduced by irradiating the area around the perforation with a low-density laser beam that is less than the perforation energy density. This is done by making the hole gentler so that no cranking occurs around the perforation.

〔産業上の利用分野〕[Industrial application field]

本発明はレーザを用いた穿孔方法、特に穿孔時にクラン
クが生じ易いセラミック基板等に穿孔を設ける方法の改
良に関する。
The present invention relates to a drilling method using a laser, and particularly to an improvement in a method of drilling holes in ceramic substrates and the like that are prone to cranking during drilling.

例えば、混成集積回路基板にスルーボールを設けるに際
し、ガラスまたはセラミックにてなる該基板に設ける透
孔は、基板材料が極めて難加工性であること、直径が0
.1mm程度の微小加工を要求されること等により、レ
ーザ加工が利用されている。
For example, when providing a through ball in a hybrid integrated circuit board, the through hole provided in the board made of glass or ceramic must be made of extremely difficult-to-process material, or have a diameter of 0.
.. Laser machining is used because micromachining of about 1 mm is required.

〔従来の技術〕[Conventional technology]

第4図(イ) 、 (o)はレーザ光を用いた従来の穿
孔方法を説明するための図である。
FIGS. 4(a) and 4(o) are diagrams for explaining a conventional drilling method using laser light.

第4図(イ)において、ガラスまたはセラミ、りにてな
る混成集積回路用の基板lは、その上面に形成および搭
載する回路素子と、下面に形成および搭載する回路素子
とを接続するスルーポールを設けるため、例えば直径0
.1mm程度の透孔2を穿設する。
In FIG. 4(a), a substrate l for a hybrid integrated circuit made of glass, ceramic, or resin has through-holes connecting circuit elements formed and mounted on its upper surface and circuit elements formed and mounted on its lower surface. For example, to provide a diameter of 0
.. A through hole 2 of about 1 mm is bored.

かかる穿孔用のレーザ光3は、縦軸をレーザ光のエネル
ギ密度Ed、横軸を透孔中心からの距離dとした第4図
(TI)に示すように、穿孔径のばらつきを少なくし効
率的に穿孔する等のため、透孔2に対向しエネルギが集
中し、穿孔エネルギ密度へを超えるピークを有する密度
分布である。
As shown in FIG. 4 (TI), where the vertical axis is the energy density Ed of the laser beam and the horizontal axis is the distance d from the center of the hole, the laser beam 3 for drilling can reduce variations in the hole diameter and improve efficiency. Because of the drilling, etc., energy is concentrated facing the through hole 2, resulting in a density distribution with a peak exceeding the drilling energy density.

レーザ光3を照射したセラミック基板1は、極部的に1
000℃以上となって溶融飛散し透孔2が穿設され、透
孔2の内壁に導体層を被着しスルーホールが完成する。
The ceramic substrate 1 irradiated with the laser beam 3 is partially
When the temperature reaches 000° C. or more, it melts and scatters, forming a through hole 2. A conductive layer is coated on the inner wall of the through hole 2, and the through hole is completed.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

」二記透孔2の穿設に際し、レーザ光3のエネルギ密度
は透孔2の穿設部に集中している。そのため、透孔部と
その周囲との温度勾配は極めて急勾配となり大きい内部
ひずみが発生し、透孔2の周囲にマイクロクラックが発
生したり、時を経てマイクロクランクを発生および成長
させる残留ひずみが残るという問題点があった。
2. When drilling the through hole 2, the energy density of the laser beam 3 is concentrated in the hole where the through hole 2 is formed. As a result, the temperature gradient between the through hole and its surroundings becomes extremely steep, generating large internal strain, which may cause microcracks to occur around the through hole 2, and residual strain that causes microcranks to develop and grow over time. There was a problem that remained.

内壁に被着する導体層が切断したり、マイクロクランク
に浸透した後工程の処理液がスルーボールの導体層を腐
食させる等の要因となり、混成集積回路の信頼性が損な
われることになる。
The reliability of the hybrid integrated circuit is impaired because the conductor layer attached to the inner wall may be cut, or the processing liquid in the post-process that has permeated the microcrank may corrode the conductor layer of the through ball.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

第1図は本発明を適用し回路基板1に透孔2を穿設する
基本方法を説明するための図である。
FIG. 1 is a diagram for explaining a basic method of forming a through hole 2 in a circuit board 1 to which the present invention is applied.

第1図において、回路基板1には、透孔2の周囲に照射
する低密度レーザ光12と、透孔2の穿設部に照射する
高密度レーザ光13を照射する。
In FIG. 1, a circuit board 1 is irradiated with a low-density laser beam 12 that irradiates the area around a through-hole 2 and a high-density laser beam 13 that irradiates the perforated portion of the through-hole 2 .

低密度レーザ光12のエネルギ密度は、基板1に透孔2
を穿設する穿孔エネルギ密度以下であり、高密度レーザ
光13ののエネルギ密度は、基板1に透孔2を穿設する
穿孔エネルギ密度以上にする。
The energy density of the low-density laser beam 12 is
The energy density of the high-density laser beam 13 is set to be equal to or higher than the drilling energy density for drilling the through hole 2 in the substrate 1.

そこで、基板lにレーザ光12.13を照射すると、低
密度レーザ光12が透孔2の周囲をレーザ穿孔温度と室
温との中間温度に加熱し、高密度レーザ光13が透孔穿
設部をレーザ穿孔温度に加熱し、透孔2が穿設される。
Therefore, when the substrate l is irradiated with laser light 12.13, the low-density laser light 12 heats the area around the through-hole 2 to a temperature intermediate between the laser drilling temperature and room temperature, and the high-density laser light 13 heats the area around the through-hole 2. is heated to a laser drilling temperature, and a through hole 2 is drilled.

〔作用〕[Effect]

上記手段によれば、穿孔部の周囲を低密度レーザ光で加
熱し、該穿孔部周囲の温度勾配が緩やかになることによ
り、マイクロクラックの発生を無(し、残留ひずみを無
害レベルに低減することができるため、混成集積回路の
スルーホールの形成に本発明方法を適用したとき、混成
集積回路の信頼性が向上する。
According to the above means, the area around the perforation is heated with a low-density laser beam, and the temperature gradient around the perforation becomes gentle, thereby eliminating the generation of microcracks and reducing residual strain to a harmless level. Therefore, when the method of the present invention is applied to the formation of through holes in a hybrid integrated circuit, the reliability of the hybrid integrated circuit is improved.

〔実施例〕〔Example〕

以下に、本発明を適用し回路基板1に透孔2を穿設する
実施例につき図面を用いて説明する。
EMBODIMENT OF THE INVENTION Below, the Example which applies this invention and drills the through-hole 2 in the circuit board 1 is demonstrated using drawing.

第2図は穿孔部周囲の加熱と穿孔用の加熱とを別工程に
した本発明の一実施例を説明するための図、第3図は穿
孔部周囲を加熱すると共に穿孔する本発明の他の実施例
を説明するための図である。
Fig. 2 is a diagram for explaining an embodiment of the present invention in which the heating around the perforation part and the heating for the perforation are performed in separate steps, and Fig. 3 is a diagram for explaining an embodiment of the present invention in which the heating around the perforation part and the heating for the perforation are performed in separate steps. It is a figure for explaining an example.

なお、第2図、第3図の実施例では、セラミ・7りにて
なる基板1に直径0.1mmの透孔2を穿設した例であ
り、透孔2を穿設するため繰り返し多数回照射するレー
ザ光のエネルギ密度は、約0.3ジユール/パルスであ
る。使用レーザ光のエネルギ密度特性を示す第2図(ハ
)と第3図(El) 、 (+1)において、縦軸はレ
ーザ光のエネルギ密度Ed、横軸は透孔中心からの距離
dである。
In the embodiment shown in FIGS. 2 and 3, a through hole 2 with a diameter of 0.1 mm is drilled in a substrate 1 made of ceramic porcelain. The energy density of the laser beam irradiated twice is approximately 0.3 Joule/pulse. In Figure 2 (C) and Figure 3 (El) and (+1) showing the energy density characteristics of the laser beam used, the vertical axis is the energy density Ed of the laser beam, and the horizontal axis is the distance d from the center of the through hole. .

第2図(イ)は穿孔部周囲を加熱する予熱状態を説明す
るための側面図、第2図(rl)は穿孔の穿設状態を説
明するための側断面図、第2図(ハ)は使用したレーザ
光のエネルギ密度分布を示す図であり、第2図(ハ)は
縦軸がレーザ光のエネルギ密度分布Ed、横軸が透孔中
心からの距離dである。
Fig. 2 (a) is a side view for explaining the preheating state of heating the surroundings of the perforation, Fig. 2 (rl) is a side sectional view for explaining the state of drilling the perforation, and Fig. 2 (c) 2 is a diagram showing the energy density distribution of the laser beam used, and in FIG. 2(C), the vertical axis is the energy density distribution Ed of the laser beam, and the horizontal axis is the distance d from the center of the through hole.

第2図(イ)において、セラミック基板1に透孔2を穿
設するに先立ち透孔穿設部およびその周囲に低密度レー
ザ光12を照射する。低密度レーザ光12は第2図(ハ
)に点線で示すように穿孔エネルギ密度A以下、例えば
0.15ジユ一ル/パルス程度であり、低密度レーザ光
12の照射によって穿孔2を穿設する部分とその周囲は
、例えば数百°C程度に予備加熱される。
In FIG. 2(A), prior to drilling a through hole 2 in a ceramic substrate 1, a low density laser beam 12 is irradiated onto the through hole portion and its surroundings. The low-density laser beam 12 has a drilling energy density of less than A, for example, about 0.15 units/pulse, as shown by the dotted line in FIG. The area to be heated and its surroundings are preheated to, for example, several hundred degrees Celsius.

第2図(■)において、低密度レーザ光12の照射を終
了した直後に高密度レーザ光13を照射する。
In FIG. 2 (■), immediately after completing the irradiation with the low density laser beam 12, the high density laser beam 13 is irradiated.

高密度レーザ光13は第2図(ハ)に実線で示すように
穿孔エネルギ密度A以上、例えば0.3ジユール/パル
スであり、高密度レーザ光13の照射によって穿孔2が
穿設される。
The high-density laser beam 13 has a drilling energy density A or higher, for example, 0.3 joules/pulse, as shown by the solid line in FIG.

第3図(イ)は穿孔の穿設状態を説明するための側断面
図、第3図(II)は第3図(イ)に示すレーザ光のエ
ネルギ密度分布を示す図、第3図(ハ)は透孔部に照射
する低密度レーザ光あエネルギ密度分布を示す図であり
、第3図(II)、(ハ)は縦軸がレーリ′光のエネル
ギ密度分布Ed、横軸が透孔中心からの距離dである。
FIG. 3(A) is a side sectional view for explaining the drilling state of the hole, FIG. 3(II) is a diagram showing the energy density distribution of the laser beam shown in FIG. 3(A), and FIG. C) is a diagram showing the energy density distribution of the low-density laser beam irradiated to the transparent hole, and in FIGS. It is the distance d from the hole center.

第3図(イ)において、透孔穿設部およびその周囲に照
射する低密度レーザ光12と、透孔穿設部に照射する低
密度レーザ光14とは、同期させ同時に照射する。
In FIG. 3(a), the low-density laser beam 12 that is irradiated to the hole-piercing portion and its surroundings and the low-density laser beam 14 that is irradiated to the hole-boring portion are synchronized and irradiated at the same time.

前述の低密度レーザ光12の中心部に照射し穿孔穿設部
にλj向する低密度レーザ光14ば、第3図(ハ)に示
すように穿孔エネルギ密度分布下、例えば0.15ジユ
一ル/パルス程度であり、低密度レーザ光12と14と
の同期レーザ光のエネルギ密度分布は、第3図(ロ)に
示すように、透孔2に対向し穿孔エネルギ密度Δ以上、
例えば0.3ジユール/パルスになり、透孔2が穿設さ
れる。
The low-density laser beam 14 that is irradiated onto the center of the aforementioned low-density laser beam 12 and directed in the direction λj toward the perforated portion is, for example, 0.15 µm under the perforation energy density distribution as shown in FIG. The energy density distribution of the synchronized laser beams with the low-density laser beams 12 and 14 is about 1.5 mm/pulse, and the energy density distribution of the laser beam synchronized with the low-density laser beams 12 and 14 is more than the drilling energy density Δ, facing the through hole 2, as shown in FIG. 3 (b).
For example, the amount is 0.3 Joule/pulse, and the through hole 2 is bored.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明は透孔部の周囲に穿孔エネ
ルギ密度以下の低密度レーザ光で照射し加熱するため、
透孔部周囲の温度勾配(内部応力勾配)が従来方法より
も緩やかになり、マイクロクラックの発生を無くし、残
留ひずめを無害レヘルに低減することができる。その結
果、本発明を混成集積回路基板のスルーポール用の透孔
に適用したとき、混成集積回路の信頼性を向上した効果
が顕著である。
As explained above, the present invention heats the periphery of the hole by irradiating it with a low-density laser beam that is less than the drilling energy density.
The temperature gradient (internal stress gradient) around the through hole becomes gentler than in the conventional method, eliminating the occurrence of microcracks and reducing residual strain to a harmless level. As a result, when the present invention is applied to a through hole for a through pole of a hybrid integrated circuit board, the effect of improving the reliability of the hybrid integrated circuit is remarkable.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明を適用し回路基板に透孔を穿設する基本
方法を説明するための図、 第2図は本発明の一実施例を説明するための図、第3図
は本発明の他の実施例を説明するための図・ 第4図はレーザ光を用いた従来の穿孔方法を説明するた
めの図、 である。 図中において、 1は回路基板、2は透孔、 12、14は低密度レーザ光、 13は高密度レーザ光、 を示ず。 (ハ) Aづと明、f1化i7づC方色合jΣさ勇1日珂オうた
よりdつ図第3 図 A〈イ芒11J%yっ−づCうを化イ多へ古え口月才う
へ表*tnm昂2 図 嵯来方珪Σ説萌す5人的っ図 寡 ArTr7′1
FIG. 1 is a diagram for explaining the basic method of drilling a through hole in a circuit board by applying the present invention, FIG. 2 is a diagram for explaining an embodiment of the present invention, and FIG. Figure 4 is a diagram for explaining another embodiment of the present invention. Figure 4 is a diagram for explaining a conventional drilling method using laser light. In the figure, 1 is a circuit board, 2 is a through hole, 12 and 14 are low-density laser beams, and 13 is a high-density laser beam. (C) Azuto Akira, f1 i7zuC square color combination jΣsayu 1st day Kao song dtsu Figure 3 Gesai Uhe table * tnm 昂2 Zusakira kei Σ theory Moesu 5 people Zuko ArTr7'1

Claims (1)

【特許請求の範囲】[Claims] レーザ光を用いた穿孔加工に際し穿孔部の周囲は、穿孔
エネルギ密度以下の低密度レーザ光(12)によって、
該穿孔部と穿孔部周囲との温度勾配が緩やかになるよう
に加熱されることを特徴としたレーザ光を用いた穿孔方
法。
During drilling using a laser beam, the area around the drilling area is treated with a low-density laser beam (12) that is less than the drilling energy density.
A drilling method using laser light, characterized in that heating is performed so that the temperature gradient between the drilling part and the surroundings of the drilling part becomes gentle.
JP61083378A 1986-04-11 1986-04-11 Piercing method using laser light Pending JPS62240187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61083378A JPS62240187A (en) 1986-04-11 1986-04-11 Piercing method using laser light

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61083378A JPS62240187A (en) 1986-04-11 1986-04-11 Piercing method using laser light

Publications (1)

Publication Number Publication Date
JPS62240187A true JPS62240187A (en) 1987-10-20

Family

ID=13800753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61083378A Pending JPS62240187A (en) 1986-04-11 1986-04-11 Piercing method using laser light

Country Status (1)

Country Link
JP (1) JPS62240187A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2002092276A1 (en) * 2001-05-11 2004-08-26 三菱電機株式会社 Laser processing method and apparatus for laminated material
WO2012014815A1 (en) * 2010-07-27 2012-02-02 旭硝子株式会社 Method for abrasion processing of glass substrate for semiconductor chip mounting
JP2014214036A (en) * 2013-04-24 2014-11-17 旭硝子株式会社 Method for forming through-hole through glass substrate by using laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2002092276A1 (en) * 2001-05-11 2004-08-26 三菱電機株式会社 Laser processing method and apparatus for laminated material
WO2012014815A1 (en) * 2010-07-27 2012-02-02 旭硝子株式会社 Method for abrasion processing of glass substrate for semiconductor chip mounting
JP2014214036A (en) * 2013-04-24 2014-11-17 旭硝子株式会社 Method for forming through-hole through glass substrate by using laser

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