JPS62239347A - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JPS62239347A JPS62239347A JP8166486A JP8166486A JPS62239347A JP S62239347 A JPS62239347 A JP S62239347A JP 8166486 A JP8166486 A JP 8166486A JP 8166486 A JP8166486 A JP 8166486A JP S62239347 A JPS62239347 A JP S62239347A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- nickel
- copper
- magneto
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000010949 copper Substances 0.000 claims abstract description 26
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 229910052742 iron Inorganic materials 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 11
- 239000011651 chromium Substances 0.000 claims abstract description 11
- 239000011135 tin Substances 0.000 claims abstract description 8
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 7
- 229910000640 Fe alloy Inorganic materials 0.000 claims abstract description 7
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 239000011701 zinc Substances 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 229910052718 tin Inorganic materials 0.000 claims abstract description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000011733 molybdenum Substances 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 35
- 239000010409 thin film Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 12
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 description 19
- 239000000956 alloy Substances 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910017060 Fe Cr Inorganic materials 0.000 description 2
- 229910002544 Fe-Cr Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- 229910019589 Cr—Fe Inorganic materials 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 229910017767 Cu—Al Inorganic materials 0.000 description 1
- 229910017112 Fe—C Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Abstract
Description
【発明の詳細な説明】
イ、産業上の利用分野
本発明は光Ｃｄ気記録媒体、特に磁気光学記憶素子に関
するものである。DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to an optical Cd recording medium, particularly to a magneto-optical storage element.
ロ、従来技術
光ディスクは、高密度、大容璽、高速アクセスの特徴を
持ち、種々の研究開発が行われている。B. Prior Art Optical disks have the characteristics of high density, large capacity, and high speed access, and various research and development efforts are being carried out on them.
このうち、一度だけ追加記録できる光ディスクの記録媒
体としては、Ｔ”ｅＯｘ ％ Ｔ６Ｃ％ Ｔｅ −３ｎ
−３ｅ等が知られ、一部商品化されている。 一方、書
き換えが可能である光記３．にとしては、光磁気記録が
注目されている。Among these, as an optical disc recording medium that can be additionally recorded only once, T”eOx % T6C% Te -3n
-3e etc. are known, and some have been commercialized. On the other hand, 3. optical records that can be rewritten. For this purpose, magneto-optical recording is attracting attention.
光磁気記録媒体としては、ＭｎＢ１ 、ＭｎＣｕＢ１な
どの多結品薄ｊ模、’Ｉ’ｂＦｅ 、ＧｄＦｅ 、Ｇｄ
Ｃｏ 。As magneto-optical recording media, multi-crystalline thin film such as MnB1, MnCuB1, 'I'bFe, GdFe, Gd
Co.
ｏｙ＋マａ 、ＧｄＴｂＦｓ 、ＴｂＤｙＦｅなどの非
晶質薄膜などが知られている。 例えば、特開昭５９−
１７１０５５号公報には、希土類−遷移金属アモルファ
ス合金薄膜（例えばＧｄＴｂＦｅ）と、酸素を含有しな
いＡＩＮ又はＳ ｉ ３ Ｎ ４からなる透明誘電体膜
と、Ｔｉ又はＴ ｉＮからなる反射膜とをこの順にて基
板上に積層せしめた磁気光学記憶素子が示されている。Amorphous thin films such as oy+ma, GdTbFs, and TbDyFe are known. For example, JP-A-59-
171055 discloses that a rare earth-transition metal amorphous alloy thin film (for example, GdTbFe), a transparent dielectric film made of oxygen-free AIN or Si 3 N 4, and a reflective film made of Ti or TiN are arranged in this order. A magneto-optic storage element is shown laminated on a substrate.
しかしながら、上記のように、磁性層に希土類金属を用
いた場合、非常に酸化されやすく、磁気光学特性が劣化
しやすい。 ところが、これまでの媒体においては、そ
うした酸化による経時変化を十分には防止できていない
。However, as described above, when rare earth metals are used in the magnetic layer, they are very easily oxidized and the magneto-optical properties are likely to deteriorate. However, conventional media have not been able to sufficiently prevent such changes over time due to oxidation.
ハ０発明の目的
本発明の目的は、酸化による経時変化が防止され、再生
信号の品質の向上した光磁気記録媒体を提供することに
ある。OBJECTS OF THE INVENTION An object of the present invention is to provide a magneto-optical recording medium that is prevented from changing over time due to oxidation and has improved quality of reproduced signals.
二０発明の構成及びその作用効果
即ち、本発明は、金属）！ｌ膜からなる光磁気記録層と
、反射膜とが＋ｆｉ層されている光磁気記録媒体におい
て、銅を主成分としかつアルミニウム、シリコン、スズ
、亜鉛及びニッケルの少な（とも１種を含有する銅合金
と、鉄を主成分としかつ銅、クロム及びニッケルの少な
くとも１種を含有する鉄合金と、ニッケルを主成分とし
かつシリコン、モリブデン、鉄、クロム及び銅の少なく
とも１４＠を含有するニッケル合金とからなる群より選
ばれた１種又は２種以上の混合物によって、前記反射膜
が形成されていることを特徴とする光磁気記録媒体に係
るものである。20 Structure of the invention and its effects, that is, the present invention is metal)! In a magneto-optical recording medium in which a magneto-optical recording layer consisting of a +fi layer and a reflective film are formed, a magneto-optical recording medium containing copper as a main component and containing a small amount of aluminum, silicon, tin, zinc and nickel (all containing one kind of copper) is used. an iron alloy containing iron as a main component and at least one of copper, chromium, and nickel; and a nickel alloy containing nickel as a main component and at least 14@ of silicon, molybdenum, iron, chromium, and copper. The present invention relates to a magneto-optical recording medium characterized in that the reflective film is formed of one or a mixture of two or more selected from the group consisting of:
本発明によれば、上記組成の反射膜を設けているので、
カー回転角の増大に加え、光磁気配ｔ！層の酸化防出効
果が十分となることが判明した。According to the present invention, since the reflective film having the above composition is provided,
In addition to increasing the Kerr rotation angle, the magneto-optical distribution t! It was found that the oxidation prevention effect of the layer was sufficient.
これは、」−記反射膜を構成する合金元素が酸素の拡散
を阻止する作用をもつからであると考えられる。This is thought to be because the alloy elements constituting the reflective film have the effect of inhibiting oxygen diffusion.
本発明の目的を達成する上で、上記反射膜は次の３つの
グループの少なくとも１種又は２種以上の混合物によっ
て形成される（但し、「％」はａｔｏ＋＊ｉｃ％（原子
％）を表わす）。In order to achieve the object of the present invention, the above-mentioned reflective film is formed of at least one kind or a mixture of two or more of the following three groups (however, "%" represents ato+*ic% (atomic %). ).
＋１）、銅合金
この銅合金は銅を主成分とするもの、好ましくは銅を６
０ａＬｏｍｔｃ％以上含有する合金であり、例えば、Ｃ
ｕ−ＡＮ系合金（８，５〜１１％Ａ！、０〜４％Ｆｅｓ
残部Ｃｕ ） 、Ｃｕ−３ｉ系合金（１〜４％Ｓ ｉ
ｓ Ｏ〜１％Ｍｎ 、 Ｏ〜１．７５％Ｓｎ 、０．１
％Ｚｎ、残部Ｃｕ ） 、Ｃｕ−３ｎ、系合金（４〜１
２％Ｓｎ 、０．２５％以下ＰｂまたはＺｎｓ残部Ｃｕ
）、Ｃｕ −３ｎ−Ｚｎ系合金（２０％以下Ｓｎ、１７
％以下Ｚｎ （Ｚｎ ＜Ｓｎ ） 、０〜少量のｐｂ
、残部Ｃｕ）、Ｃｕ Ｚｎ系合金（１７％以下Ｚｎｓ
残部Ｃｕ）、Ｃｕ−Ｎｉ系合金（８０％Ｃｕ、２０％Ｎ
ｔｓあるいは７５％Ｃｕ、２０％Ｎｉ ％ ５％Ｚｎ、
あるいは７０％Ｃｕ、３０％Ｎｉ）。 なお、例えば、
Ｃｕ −３ｉ系合金とは、ＣｕとＳｉとが全体の９５％
以上である合金をさす（以下も同様）。+1), copper alloy This copper alloy is one whose main component is copper, preferably 6
It is an alloy containing 0aLomtc% or more, for example, C
u-AN alloy (8.5~11% A!, 0~4% Fes
balance Cu), Cu-3i alloy (1~4%Si
sO~1%Mn, O~1.75%Sn, 0.1
%Zn, balance Cu), Cu-3n, system alloy (4-1
2% Sn, 0.25% or less Pb or Zns balance Cu
), Cu-3n-Zn alloy (20% or less Sn, 17
% or less Zn (Zn<Sn), 0 to a small amount of PB
, balance Cu), Cu Zn-based alloy (17% or less Zns
balance Cu), Cu-Ni alloy (80% Cu, 20% N
ts or 75%Cu, 20%Ni% 5%Zn,
or 70% Cu, 30% Ni). In addition, for example,
Cu-3i alloy is made up of 95% Cu and Si.
Refers to alloys with the above (the same applies below).
（２）、鉄合金
この鉄合金は鉄を主成分とするもの、好ましくは鉄を３
０ａｔｏｍｉｃ％以上含有する合金であり、例えば、Ｆ
ｅ −Ｃｒ−Ｎｉ系合金（１９〜２０％Ｃｒ、２２〜２
４％Ｎｉ 、２〜３％Ｍｏ 、 Ｌ 〜１．７５％Ｃｕ
、１〜３．２５％Ｓｉ、０．０７％Ｃ１残部［？ｅ、ま
たは２０％Ｃｒ、２９％Ｎｉ 、２％Ｍｏ ％ ４％Ｃ
Ｌ１％１％５ｉ３０．０７％Ｃ１残部Ｆｅ、または２５
％Ｃｒ、３５％Ｎｉ、５％Ｍｏ ％ ０．２ Ｎｏ、５
％Ｃ３残部Ｆｃ）、Ｆｅ −Ｃｒ系合金（４〜１０％Ｃ
ｒ 、 ０．５〜１．５％ＭＯｓ残部Ｆｅ）。(2) Iron alloy This iron alloy is mainly composed of iron, preferably 3 iron.
It is an alloy containing 0 atomic% or more, for example, F
e -Cr-Ni alloy (19-20% Cr, 22-2
4%Ni, 2~3%Mo, L~1.75%Cu
, 1-3.25% Si, 0.07% C1 balance [? e, or 20%Cr, 29%Ni, 2%Mo% 4%C
L1%1%5i30.07%C1 balance Fe, or 25
%Cr, 35%Ni, 5%Mo% 0.2 No, 5
%C3 balance Fc), Fe-Cr alloy (4~10%C
r, 0.5-1.5% MOs balance Fe).
（３）、ニッケル合金
このニッケル合金はニッケルを主成分とするもの、好ま
しくはニッケルを３０ａ Ｌｏｗ ｉ ｃ％以上含有す
る合金であり、例えば、Ｎｉ−３ｉ系合金（８５％Ｎｉ
％ ｔｏ％Ｓｉ 、３９ＡＣｕ 、Ｚ％Ａｆ） 、Ｎ
ｉ −Ｃｕ系合金（６３％Ｎｉ 、 ２９〜３０％Ｃｕ
、 Ｑ、９〜２％Ｆｅ 、 ０．１〜４％Ｓｉ 、
０〜２．７５％Ａｌ）、Ｎｉ−Ｍｏ−Ｆｅ系合金（６０
〜６５％Ｎｉ 、 ２５〜３５％Ｍｏ ％５％Ｆｅ ）
、Ｎｉ −Ｍｏ −Ｆｅ−Ｃｒ系合金（５５〜６０％
Ｎｉ 、、１５〜２０％Ｍｏ ｓ ６％Ｆｅ、、１２〜
１６％Ｃｒ５５％Ｗ） 、Ｎｉ −Ｍｏ −Ｆｅ −Ｃ
ｒ −Ｃｕ系合金（６０％Ｎｉ、５％ＭＯ１８％Ｆｅ
、２１％Ｃｒ。(3) Nickel Alloy This nickel alloy is one whose main component is nickel, preferably an alloy containing 30a Low i c% or more of nickel. For example, Ni-3i alloy (85%Ni
%to%Si, 39ACu, Z%Af), N
i-Cu alloy (63%Ni, 29~30%Cu
, Q, 9~2%Fe, 0.1~4%Si,
0-2.75% Al), Ni-Mo-Fe alloy (60
~65%Ni, 25~35%Mo%5%Fe)
, Ni-Mo-Fe-Cr alloy (55-60%
Ni, 15~20%Mos 6%Fe, 12~
16%Cr55%W), Ni-Mo-Fe-C
r -Cu-based alloy (60%Ni, 5%MO18%Fe
, 21%Cr.
３％Ｃｕ５１％Ｓｉ、１％Ｍｎ、１％Ｗ、または４４〜
４７％Ｎｉ 、 ５．５〜？、５％Ｍｏ 、２１〜２３
％Ｃｒ５Ｏ１１５％ＣＬＩＸ １％Ｓｉ、１〜２％Ｍｎ
、２．５％Ｃｏ 。3%Cu51%Si, 1%Mn, 1%W, or 44~
47%Ni, 5.5~? , 5%Mo, 21-23
%Cr5O115%CLIX 1%Si, 1-2%Mn
, 2.5% Co.
１％Ｗ、 １．７〜２．５％Ｎｂ、残部Ｆａ）、Ｎｉ
−Ｃｒ−Ｃｕ−Ｍｏ系合金（５６〜５７％Ｎｉ 、９３
〜２４％Ｃｒ、８％Ｃｕ、４％ＭＯ２２％Ｗ、１％Ｓｉ
またはＭｎ）、Ｎｉ −Ｃｒ−Ｆｅ系合金（７９，５％
Ｎｉ、１３％Ｃｕ５６．５％Ｆｅ 、 ０．２％Ｃ１１
，あるいは３０〜３４％Ｎｉ５１９〜２２％Ｃｒ 、
０．５％Ｃｕ ％ １％Ｓｉ 、 １．５％Ｍｎｓ残部
Ｆｅ）。1% W, 1.7-2.5% Nb, balance Fa), Ni
-Cr-Cu-Mo alloy (56-57%Ni, 93%
~24%Cr, 8%Cu, 4%MO22%W, 1%Si
or Mn), Ni-Cr-Fe alloy (79.5%
Ni, 13%Cu56.5%Fe, 0.2%C11
, or 30-34%Ni519-22%Cr,
0.5%Cu% 1%Si, 1.5%Mns balance Fe).
上記の各合金の混合物から反射膜を形成してもよく、例
えば銅合金とニッケル合金とを１：５〜５：１で混合す
ることができる。The reflective film may be formed from a mixture of the above-mentioned alloys, for example, a copper alloy and a nickel alloy may be mixed at a ratio of 1:5 to 5:1.
他方、上記光磁気記録層は、膜面に垂直方向に磁化容易
軸を有するものであって、公知の材質、即ちＴｂＦｅ
、ＧｄＦｅ 、Ｇｄ’ｌ’ｂＦｅＣｏ 、ＧｄＣ。On the other hand, the magneto-optical recording layer has an axis of easy magnetization perpendicular to the film surface, and is made of a known material, ie, TbFe.
, GdFe, Gd'l'bFeCo, GdC.
等の希土類−遷移金属アモルファス合金で構成すること
ができる。 その製膜には、公知のようにスパッタリン
グを採用してよい。It can be composed of a rare earth-transition metal amorphous alloy such as. Sputtering, as is well known, may be used for forming the film.
また、この光磁気記録層上には、上記反射膜との間に透
明誘電体膜が設けられるが、こうした誘電体としては、
５ｉ３ＮｎをはじめＡＩＮ、Ｓｉｎｇ、ＺｎＳ、ＩＴＯ
（Ｉｎｄｉｕｍ Ｔｉｎ ０ｘｉｄｅ）等が挙げら
れる。 この誘電体膜はスパッタリングによって光磁気
記録層上に積層して設けることができるが、光磁気記録
層と基板との間にも設けて光磁気記録層を誘電体膜でサ
ンドインチした構造としてもよい。 このサンドイッチ
構造にすれば、基板として樹脂基板を用いるときに生じ
がちな基板からの酸素の取り込みが膜形成時に生じ難く
なるので、有利であると考えられる。Further, a transparent dielectric film is provided on this magneto-optical recording layer between it and the above-mentioned reflective film.
5i3Nn, AIN, Sing, ZnS, ITO
(Indium Tin Oxide) and the like. This dielectric film can be laminated on the magneto-optical recording layer by sputtering, but it can also be provided between the magneto-optical recording layer and the substrate and the magneto-optical recording layer is sandwiched between dielectric films. good. This sandwich structure is considered to be advantageous because the incorporation of oxygen from the substrate, which tends to occur when a resin substrate is used as the substrate, is less likely to occur during film formation.
また、）ＩＥ板の構成材料は種々のものが採用可能であ
るが、ポリエチレンテレフタレート、ポリ塩化ビニル、
三酢酸セルロース、ポリカーボネート、ポリイミド、ポ
リアミド、ポリメチルメタクリレートの如きプラスチッ
クスがある。 ガラス等、セラミックス等からなる基板
も使用可能である。In addition, various materials can be used for the IE board, including polyethylene terephthalate, polyvinyl chloride,
Plastics include cellulose triacetate, polycarbonate, polyimide, polyamide, and polymethyl methacrylate. Substrates made of glass, ceramics, etc. can also be used.
或いは金属基板も使用してもよい。 基板又は基体の形
状はシート、カード、ディスク、ドラムの他、長尺テー
プ状でもよい。Alternatively, a metal substrate may also be used. The shape of the substrate or base body may be a sheet, a card, a disk, a drum, or a long tape.
第１図は、基板ｌ上に、誘電体膜５と光磁気記録層２と
誘電体膜３と反射膜４とが順次積層された、本発明に基
づく光磁気記録媒体の一例を示すものである。 ここで
、各層の厚みは、誘電体膜５がｔｏｏｏ〜２０００人、
光磁気記録層２が２００〜４００人、誘電体膜３が３０
０〜７００ 人、反射膜４が２５０〜１０００人である
のがよい。 この反射膜４の存在によって、耐蝕性の向
上に加えてカー回転角の増大、Ｓ／Ｎの向上が得られる
。FIG. 1 shows an example of a magneto-optical recording medium according to the present invention, in which a dielectric film 5, a magneto-optical recording layer 2, a dielectric film 3, and a reflective film 4 are sequentially laminated on a substrate l. be. Here, the thickness of each layer is such that the dielectric film 5 has a thickness of too much to 2000,
200 to 400 people for magneto-optical recording layer 2, 30 people for dielectric film 3
It is preferable that the number of people is 0 to 700, and the number of people of the reflective film 4 is 250 to 1000. The presence of this reflective film 4 not only improves corrosion resistance but also increases Kerr rotation angle and improves S/N.
ホ、実施例 以下、本発明を実施例について更に詳細に説明する。E, Example Hereinafter, the present invention will be explained in more detail with reference to Examples.
ｌ施±
透明ポリカーボネート基板上に、膜厚１４００人のｓｉ
、Ｎ４誘電体膜と膜厚２５０人のＧｄＴｂＦｅＣ。1400mm Si film thickness is applied on a transparent polycarbonate substrate.
, N4 dielectric film and GdTbFeC with a film thickness of 250 nm.
非晶質合金薄膜とがスパッタリングによって順次形成さ
れ、その上に、膜厚５００人の５ｉｓＮ、誘電 １体膜
（保護膜）が窒素雰囲気中での反応性スパッタリングに
よって形成された。 更にその上に、１０００人のＣｕ
−Ａｌ系合金膜（８，５〜１１％Ａ１、θ〜４％Ｆ ｅ
、残部Ｃｕ）がスパッタリングによって反射膜として
形成された。An amorphous alloy thin film was sequentially formed by sputtering, and a dielectric monolithic film (protective film) having a thickness of 500 nm was formed thereon by reactive sputtering in a nitrogen atmosphere. Furthermore, on top of that, 1000 Cu
-Al-based alloy film (8.5~11%A1, θ~4%Fe
, the remainder Cu) was formed as a reflective film by sputtering.
このようにして作製された光磁気記録媒体を温度６０℃
、相対湿度８０％の恒温恒湿槽に入れて、耐腐蝕性試験
を行った。The magneto-optical recording medium produced in this way was heated to 60°C.
A corrosion resistance test was conducted by placing the sample in a constant temperature and humidity chamber at a relative humidity of 80%.
止較貫
実施例において、反射膜としてＴｉ膜を用いた以外は同
様の記録媒体を作成し、ごれを上記した耐腐蝕性試験に
供した。A recording medium similar to that used in the stop comparison example was prepared except that a Ti film was used as the reflective film, and the dirt was subjected to the corrosion resistance test described above.
以上の結果を第２図に示したが、θｋ（カー回転角）に
ついては両者ともそれ程度化がないが、Ｈｅ （保磁
力）については反射膜がＴ ｉの場合よりも本発明に基
づ（Ｃｕ −Ａｌ系合金の場合の方が変化がずっと少な
いことが分かる。The above results are shown in Figure 2, and although there is no significant difference in θk (Kerr rotation angle) in either case, He (coercive force) is better based on the present invention than when the reflective film is Ti. (It can be seen that the change is much smaller in the case of the Cu-Al alloy.
以上、本発明を例示したが、上述の例は本発明の技術的
思想に基づいて更に変形可能である。Although the present invention has been illustrated above, the above-mentioned example can be further modified based on the technical idea of the present invention.
図面は本発明の実施例を示すものであって、第１図は光
磁気記録媒体の断面図、
第２図は耐腐蝕試験の結果を比較して示すグラフ
である。
なお、図面に示す符号に於いて、
ｌ−・・・・・・・基板
２−・・・−・・・−・・光磁気記録層３．５・・−・
−−−一−−−誘電体膜４・−一−−−−−−−反射）
模
である。The drawings show examples of the present invention, and FIG. 1 is a cross-sectional view of a magneto-optical recording medium, and FIG. 2 is a graph showing a comparison of the results of a corrosion resistance test. In addition, in the symbols shown in the drawings, l-...Substrate 2--Magneto-optical recording layer 3.5--
---1----Dielectric film 4・-1----Reflection)
It is a model.
Claims (1)
されている光磁気記録媒体において、銅を主成分としか
つアルミニウム、シリコン、スズ、亜鉛及びニッケルの
少なくとも１種を含有する銅合金と、鉄を主成分としか
つ銅、クロム及びニッケルの少なくとも１種を含有する
鉄合金と、ニッケルを主成分としかつシリコン、モリブ
デン、鉄クロム及び銅の少なくとも１種を含有するニッ
ケル合金とからなる群より選ばれた１種又は２種以上の
混合物によって、前記反射膜が形成されていることを特
徴とする光磁気記録媒体。1. In a magneto-optical recording medium in which a magneto-optical recording layer made of a metal thin film and a reflective film are laminated, a copper alloy containing copper as a main component and at least one of aluminum, silicon, tin, zinc and nickel. , an iron alloy containing iron as a main component and at least one of copper, chromium, and nickel, and a nickel alloy containing nickel as a main component and at least one of silicon, molybdenum, iron-chromium, and copper. A magneto-optical recording medium characterized in that the reflective film is formed of one type or a mixture of two or more types selected from the group.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8166486A JPS62239347A (en) | 1986-04-09 | 1986-04-09 | Magneto-optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8166486A JPS62239347A (en) | 1986-04-09 | 1986-04-09 | Magneto-optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62239347A true JPS62239347A (en) | 1987-10-20 |
Family
ID=13752595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8166486A Pending JPS62239347A (en) | 1986-04-09 | 1986-04-09 | Magneto-optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62239347A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS639040A (en) * | 1986-06-30 | 1988-01-14 | Matsushita Electric Ind Co Ltd | Optical information recording medium |
| EP0329450A2 (en) * | 1988-02-17 | 1989-08-23 | Victor Company Of Japan, Limited | Optical record medium having an improved reflection thin film |
| JPH02226531A (en) * | 1989-02-27 | 1990-09-10 | Hitachi Ltd | Structure of optical disk |
| US20110051584A1 (en) * | 2009-08-31 | 2011-03-03 | Moser Baer India Limited | Optical recording mediums |
-
1986
- 1986-04-09 JP JP8166486A patent/JPS62239347A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS639040A (en) * | 1986-06-30 | 1988-01-14 | Matsushita Electric Ind Co Ltd | Optical information recording medium |
| EP0329450A2 (en) * | 1988-02-17 | 1989-08-23 | Victor Company Of Japan, Limited | Optical record medium having an improved reflection thin film |
| US5058098A (en) * | 1988-02-17 | 1991-10-15 | Victor Company Of Japan, Ltd. | Optical record medium having an improved reflection thin film |
| JPH02226531A (en) * | 1989-02-27 | 1990-09-10 | Hitachi Ltd | Structure of optical disk |
| US20110051584A1 (en) * | 2009-08-31 | 2011-03-03 | Moser Baer India Limited | Optical recording mediums |
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