JPS622391B2 - - Google Patents
Info
- Publication number
- JPS622391B2 JPS622391B2 JP58091747A JP9174783A JPS622391B2 JP S622391 B2 JPS622391 B2 JP S622391B2 JP 58091747 A JP58091747 A JP 58091747A JP 9174783 A JP9174783 A JP 9174783A JP S622391 B2 JPS622391 B2 JP S622391B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- rotating magnetic
- bubble
- bubble memory
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims description 16
- 238000012360 testing method Methods 0.000 claims description 12
- 230000000903 blocking effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 229910000889 permalloy Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010998 test method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004173 biogeochemical cycle Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明はバブルメモリ素子における動作試験方
法の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to an improvement in an operation testing method for bubble memory devices.
(b) 技術の背景
バブルメモリ素子は磁性薄膜の膜面に垂直バイ
アス磁界をかけて得られる磁気バブルの有無を2
進情報の1、0に対応させ、この磁気バブルによ
る信号列にバイアス磁界の局部的な勾配を与えて
シフトさせ、所定のバブル伝送路を転送する構成
を有する不揮発性のシリアル磁性メモリ素子であ
る。バブル伝送路は該磁性薄膜に接し各ビツト位
置に配置して得られるT1、シエブロンまたはハ
ーフデイスク形状等の磁性体例えばパーマロイパ
ターンに与える面内回転磁界あるいは導体パター
ンに通電して得られる局部磁界によつて局部垂直
磁界勾配を得て磁性薄膜における多数例えば〜
106ビツトの有効磁気バブルを同時に効率良く、
移動、発生、消滅、拡大および分割等の制御を選
択的に行つて磁性メモリとするものである。(b) Background of the technology Bubble memory elements are made by applying a perpendicular bias magnetic field to the surface of a magnetic thin film to detect the presence or absence of magnetic bubbles.
This is a non-volatile serial magnetic memory element that has a configuration in which the signal train caused by magnetic bubbles is shifted by applying a local gradient of a bias magnetic field to correspond to 1 and 0 in binary information, and is transferred through a predetermined bubble transmission path. . The bubble transmission path is formed by applying an in-plane rotating magnetic field to a T1, chevron or half-disk shaped magnetic material such as a permalloy pattern, which is obtained by placing it in contact with the magnetic thin film at each bit position, or a local magnetic field obtained by energizing a conductor pattern. Thus, we can obtain local perpendicular magnetic field gradients in the magnetic thin film, e.g.
10 6- bit effective magnetic bubbles at the same time and efficiently.
A magnetic memory is created by selectively controlling movement, generation, disappearance, expansion, division, etc.
(c) 従来技術と問題点
従来より磁気バブルメモリ素子の機能を保証す
るために、第1図a,b,cに示すような構成と
駆動方法で磁気バブルメモリ素子に回転磁界HR
を印加して磁気バブルの移動を行つている。第1
aはコイル駆動回路のブロツク図、第1図bはコ
イルの駆動信号におけるタイムチヤートおよび第
1図cはコイルの電流を流すタイムチヤートであ
る。LX,LYはコイル、SX1a,SX1b,SX2a,S
X2b,SY1a,SY1b,SY2a,SY2bはスイツチング
素子であり、機械接点により表示したが通常半導
体素子による電流スイツチにより構成され、また
コイルLX,LYは直角配置にあるものとする。そ
して磁気バブルメモリ素子は他のメモリと同様に
直流動性および動作試験の他のデータ保持機能を
確保するために連続動作試験、必要によつては環
境サイクル、物理的衝撃等の試験が施されるがこ
れらは駆動条件を一定率例えば駆動電圧を一律に
変更して発生する誤動作の偶然性に基くもので例
えば磁気バブルがパーマロイパターンを伝搬中ど
の部分で例えば磁気バブルが一つのパーマロイパ
ターン内の何処を移動中に、または磁気バブルが
二つの隣接するパーマロイパターン間の隙間を飛
越す時に誤動作を発生したのかを把握することが
出来ない為、試験時間を無駄に長く必要とした
り、迅速な不良解析が出来ない欠点があつた。(c) Prior art and problems In order to guarantee the functionality of the magnetic bubble memory element, a rotating magnetic field H R is applied to the magnetic bubble memory element using the configuration and driving method shown in FIG.
is applied to move the magnetic bubble. 1st
1a is a block diagram of the coil drive circuit, FIG. 1b is a time chart of the coil drive signal, and FIG. 1c is a time chart of the current flowing through the coil. L X , L Y are coils, S X1a , S X1b , S X2a , S
X2b , S Y1a , S Y1b , S Y2a , and S Y2b are switching elements, and although they are shown as mechanical contacts, they are normally constructed by current switches using semiconductor elements, and the coils L X and L Y are assumed to be arranged at right angles. . And, like other memories, magnetic bubble memory devices are subjected to continuous operation tests, environmental cycles, physical shock tests, etc. as necessary, to ensure DC performance and other data retention functions of operation tests. However, these are based on the coincidence of malfunctions that occur when the driving conditions are changed at a constant rate, for example, the driving voltage. It is not possible to determine whether a malfunction has occurred during movement of the permalloy pattern or when a magnetic bubble jumps over the gap between two adjacent permalloy patterns, resulting in unnecessarily long test times and rapid failure analysis. There was a drawback that I couldn't do it.
(d) 発明の目的
本発明の目的は上記の欠点を除去するためHR
を形成する為のコイルの駆動信号における任意位
置に単数または複数の短いオフ時間を設けて回転
磁界に疑似的なノイズを発生させ、磁気バブルメ
モリ試験における効率的な手段と迅速なエラー発
生モードの解析手段を提供しようとするものであ
る。(d) Object of the invention The object of the invention is to eliminate the above-mentioned drawbacks .
By setting one or more short off-times at arbitrary positions in the coil drive signal to generate a pseudo noise in the rotating magnetic field, this method is an efficient means for magnetic bubble memory testing and a quick error generation mode. It is intended to provide a means of analysis.
(e) 発明の構成
この目的は、バイアス磁界と回転磁界を与えて
磁気バブルを駆動するバブルメモリ素子におい
て、前記回転磁界を発生する為に、直角に配向し
た2組の回転磁界コイルに印加する2相の駆動信
号の任意の位相位置に、単数又は複数の予め設定
した時間幅を有するパルスを発生するパルス発生
手段と、該パルス発生手段が発生するパルスによ
り前記駆動信号の前記回転磁界コイルへの印加を
阻止する駆動信号阻止手段とを備え、該駆動信号
阻止手段により阻止された前記駆動信号を前記各
回転磁界コイルに印加して前記バブルメモリ素子
の動作を試験することを特徴とするバブルメモリ
素子の試験方法を提供することによつて達成する
ことが出来る。(e) Structure of the Invention The object is to apply a bias magnetic field and a rotating magnetic field to two sets of rotating magnetic field coils oriented at right angles in order to generate the rotating magnetic field in a bubble memory element that drives a magnetic bubble by applying a bias magnetic field and a rotating magnetic field. a pulse generating means that generates a pulse having a single or plural preset time widths at an arbitrary phase position of a two-phase drive signal; and a pulse generated by the pulse generating means that directs the drive signal to the rotating magnetic field coil. a drive signal blocking means for blocking application of the bubble, and the drive signal blocked by the drive signal blocking means is applied to each of the rotating magnetic field coils to test the operation of the bubble memory element. This can be achieved by providing a method for testing memory devices.
(f) 発明の実施例
以下、図面を参照しつつ本発明の一実施例につ
いて説明する。第2図aは本発明の一実施例にお
けるバブルメモリ素子の試験方法によるブロツク
図および第2図bはコイル電流のタイムチヤート
を示す。図において1はバブルメモリ素子、11
は制御部、12は駆動信号のタイミング発生器、
13は疑似妨害のため駆動信号の任意位相位置に
逆極性パルスを送出するパルス発生器、14はア
ンド回路および15はコイル駆動回路である。(f) Embodiment of the invention An embodiment of the invention will be described below with reference to the drawings. FIG. 2a shows a block diagram of a test method for a bubble memory device according to an embodiment of the present invention, and FIG. 2b shows a time chart of a coil current. In the figure, 1 is a bubble memory element, 11
12 is a control unit; 12 is a drive signal timing generator;
13 is a pulse generator that sends out a pulse of opposite polarity at an arbitrary phase position of a drive signal for pseudo-interference, 14 is an AND circuit, and 15 is a coil drive circuit.
図の構成においてパルス発生器13より逆極性
パルスの送出のないときは、制御部11に入力さ
れるアクセスに従つてタイミング発生器12より
送出する従来の第1図bと同様の駆動信号に従つ
て各アンド回路14経由コイル駆動回路15によ
りバブルメモリ素子1の駆動コイルLX,LYを駆
動して回転磁界を発生し、磁気バブルを1サイク
ル毎に1歩進する。 In the configuration shown in the figure, when the pulse generator 13 does not send out a pulse of opposite polarity, the timing generator 12 sends out a drive signal similar to the conventional drive signal shown in FIG. Then, the coil drive circuit 15 via each AND circuit 14 drives the drive coils L X and L Y of the bubble memory element 1 to generate a rotating magnetic field and move the magnetic bubble one step every cycle.
しかし、本発明の一実施例においては制御部1
1は図示省略したが、記憶部に蓄積した制御プロ
グラムおよび制御データに従つてパルス発生器1
3をして予め設定したパルス幅の逆極性パルスを
第2図bのb―2に示すように駆動信号の任意位
相位置に送出せしめればパルス発生器13からの
出力信号が印加されたアンド回路14は逆極性パ
ルスの部分については論理積が得られないのでコ
イル駆動回路15に印加される入力信号は第2図
bのb―1のように逆極性パルス部分が歯欠けと
なり、対応する部分のコイル電流、ここではLY
電流は第2図bのb―3に示すように不連続に変
化し部分的に回転磁界の変化に異状が発生する。
従つてこの位相を逐一変化するよう制御部11に
より制御すれば任意の位相位置において疑似的に
ノイズを重畳したのと同様の効果が得られ、前述
の(c)従来技術と問題点で述べた磁気バブルがパー
マロイパターンによる転送動作中に例えばパーマ
ロイパターン間の隙間を飛越すときに回転磁界の
不足で誤動作を起すような試験が容易に再現出来
る。以上はLYに逆極性パルスを1個重畳させる
ことで説明したが、1サイクルの任意位置に重畳
が制御出来るのでLXは勿論、1サイクル中の任
意位相位置に複数個の逆極性パルスを同様に重畳
出来ることはいう迄もない。 However, in one embodiment of the present invention, the control unit 1
Although 1 is not shown, the pulse generator 1 is operated according to the control program and control data stored in the storage unit.
3 and sends out a reverse polarity pulse with a preset pulse width at an arbitrary phase position of the drive signal as shown in b-2 of FIG. Since the circuit 14 cannot obtain a logical product for the reverse polarity pulse portion, the input signal applied to the coil drive circuit 15 has teeth missing in the reverse polarity pulse portion as shown in b-1 of FIG. The coil current of the section, here L Y
The current changes discontinuously as shown at b-3 in FIG.
Therefore, if the control unit 11 controls this phase to change one by one, an effect similar to that of pseudo-superimposing noise at an arbitrary phase position can be obtained, which is the same effect as described in (c) Prior Art and Problems above. It is easy to reproduce a test in which a magnetic bubble, for example, jumps over a gap between permalloy patterns during a transfer operation using permalloy patterns, and a malfunction occurs due to insufficient rotating magnetic field. The above explanation was made by superimposing one reverse polarity pulse on L It goes without saying that they can be superimposed in the same way.
(g) 発明の効果
以上説明したように本発明によれば、バブルメ
モリ素子の動作試験に際しコイルLX,LYの駆動
信号における任意位相位置に疑似パルスを重畳し
てオフ時間を設け、回転磁界に疑似にノイズを発
生させて効率的な試験手段とする他、エラー発生
モードの解析手段を提供する有力な試験方法を提
供することが出来る。(g) Effects of the Invention As explained above, according to the present invention, when testing the operation of a bubble memory element, a pseudo pulse is superimposed at an arbitrary phase position in the drive signals of the coils L In addition to providing an efficient test method by generating pseudo noise in a magnetic field, it is also possible to provide an effective test method that provides a means for analyzing error occurrence modes.
第1図aは従来および本発明の一実施例におけ
るバブルメモリ素子のコイル駆動回路によるブロ
ツク図、第1図bはその駆動信号におけるタイム
チヤート、第1図cは駆動コイルLX,LYにおけ
る駆動電流、第2図aは本発明の一実施例におけ
るバブルメモリ素子の試験方法によるブロツク図
および第2図bはそのタイムチヤートである。
図において1はバブルメモリ素子、11は制御
部、12はタイミング発生器、13はパルス発生
器、14はアンド回路、15はコイル駆動回路お
よびLX,LYはバブルメモリ素子の回転磁界用コ
イルである。
FIG. 1a is a block diagram of a coil drive circuit for a conventional bubble memory element and an embodiment of the present invention, FIG. 1b is a time chart of the drive signal, and FIG . FIG. 2a is a block diagram of a test method for a bubble memory device according to an embodiment of the present invention, and FIG. 2b is a time chart thereof. In the figure, 1 is a bubble memory element, 11 is a control unit, 12 is a timing generator, 13 is a pulse generator, 14 is an AND circuit, 15 is a coil drive circuit, and L X and L Y are rotating magnetic field coils of the bubble memory element. It is.
Claims (1)
を駆動するバブルメモリ素子において、前記回転
磁界を発生する為に、直角に配向した2組の回転
磁界コイルに印加する2相の駆動信号の任意の位
相位置に、単数又は複数の予め設定した時間幅を
有するパルスを発生するパルス発生手段と、該パ
ルス発生手段が発生するパルスにより前記駆動信
号の前記回転磁界コイルへの印加を阻止する駆動
信号阻止手段とを備え、該駆動信号阻止手段によ
り阻止された前記駆動信号を前記各回転磁界コイ
ルに印加して前記バブルメモリ素子の動作を試験
することを特徴とするバブルメモリ素子の試験方
法。1. In a bubble memory element that drives a magnetic bubble by applying a bias magnetic field and a rotating magnetic field, any phase of two-phase drive signals applied to two sets of rotating magnetic field coils oriented at right angles in order to generate the rotating magnetic field. a pulse generating means for generating a pulse having one or more preset time widths at a position; and a driving signal blocking means for preventing application of the driving signal to the rotating magnetic field coil by the pulses generated by the pulse generating means. A method for testing a bubble memory device, comprising: testing the operation of the bubble memory device by applying the drive signal blocked by the drive signal blocking means to each of the rotating magnetic field coils.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58091747A JPS59217287A (en) | 1983-05-25 | 1983-05-25 | Testing method of bubble memory element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58091747A JPS59217287A (en) | 1983-05-25 | 1983-05-25 | Testing method of bubble memory element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59217287A JPS59217287A (en) | 1984-12-07 |
JPS622391B2 true JPS622391B2 (en) | 1987-01-19 |
Family
ID=14035121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58091747A Granted JPS59217287A (en) | 1983-05-25 | 1983-05-25 | Testing method of bubble memory element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59217287A (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5727480A (en) * | 1980-07-23 | 1982-02-13 | Hitachi Ltd | Tester for magnetic bubble memory selection |
JPS57150181A (en) * | 1981-03-11 | 1982-09-16 | Fujitsu Ltd | Test method for magnetic bubble memory |
JPS57200986A (en) * | 1981-06-03 | 1982-12-09 | Fujitsu Ltd | Disturbance resistance magnetic characteristic testing method of magnetic bubble memory |
JPS5922283A (en) * | 1982-07-26 | 1984-02-04 | Fujitsu Ltd | Method for testing magnetic bubble memory element |
JPS59152583A (en) * | 1983-02-21 | 1984-08-31 | Hitachi Ltd | Testing method of magnetic bubble memory |
-
1983
- 1983-05-25 JP JP58091747A patent/JPS59217287A/en active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5727480A (en) * | 1980-07-23 | 1982-02-13 | Hitachi Ltd | Tester for magnetic bubble memory selection |
JPS57150181A (en) * | 1981-03-11 | 1982-09-16 | Fujitsu Ltd | Test method for magnetic bubble memory |
JPS57200986A (en) * | 1981-06-03 | 1982-12-09 | Fujitsu Ltd | Disturbance resistance magnetic characteristic testing method of magnetic bubble memory |
JPS5922283A (en) * | 1982-07-26 | 1984-02-04 | Fujitsu Ltd | Method for testing magnetic bubble memory element |
JPS59152583A (en) * | 1983-02-21 | 1984-08-31 | Hitachi Ltd | Testing method of magnetic bubble memory |
Also Published As
Publication number | Publication date |
---|---|
JPS59217287A (en) | 1984-12-07 |
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