JPS5922283A - Method for testing magnetic bubble memory element - Google Patents

Method for testing magnetic bubble memory element

Info

Publication number
JPS5922283A
JPS5922283A JP57129924A JP12992482A JPS5922283A JP S5922283 A JPS5922283 A JP S5922283A JP 57129924 A JP57129924 A JP 57129924A JP 12992482 A JP12992482 A JP 12992482A JP S5922283 A JPS5922283 A JP S5922283A
Authority
JP
Japan
Prior art keywords
bubble memory
memory element
magnetic
magnetic field
magnetic bubble
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57129924A
Other languages
Japanese (ja)
Inventor
Yutaka Mori
豊 森
Toshihiro Hoshi
星 敏弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57129924A priority Critical patent/JPS5922283A/en
Publication of JPS5922283A publication Critical patent/JPS5922283A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To guarantee operation from a disturbance magnetic field or the like, by providing a magnetic bubble memory element to which no regular disturbance is applied ordinally with a means to apply the disturbance selectively to a rotary magnetic field in testing of the operation of the magnetic bubble memory element. CONSTITUTION:A control part 1 controls a driving circuit 2 in accordance with a built in program to drive the magnetic bubble memory element 6 and execute the test of reading/writing operation. The control part 1 controls the on/off of oscillators 3x, 3y to oscillate asynchronous optional frequency with the frequency of rotary magnetic field HR driving current sent from a driving circuit 2 and superpose noise current of which amplitude is optionally set up by amplifiers 4x, 4y to driving current applied to coils 6x, 6y from the driving circuit 2 through modulation transformers 5x, 5y. If the control part 1 controls the on/off of optional one/both of oscillators 3x, 3y as required, driving current based on superposing or non-superposing is supplied selectively with optional period to coils 6x, 6y.

Description

【発明の詳細な説明】 (a)  発明の技術分野 磁気バブルメモリ素子におけるその動作試験方法の改良
に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to an improvement in a method for testing the operation of a magnetic bubble memory device.

(b)  技術の背景 バブルメモリ素子は磁性薄膜の膜面に垂直バイアス磁性
をかけて得られる磁気バブルの有無を2進情報の1.0
に対応させ、この磁気バブルによる信号列にバイアス磁
界の局部的な勾配を与えてシフトさせ、所定のバブル伝
送路を転送する構成を有する不揮発性のシリアル磁性メ
モリ素子である。
(b) Background of the technology Bubble memory elements use binary information of 1.0 to determine the presence or absence of magnetic bubbles obtained by applying perpendicular bias magnetism to the surface of a magnetic thin film.
This is a nonvolatile serial magnetic memory element having a configuration in which a signal train generated by magnetic bubbles is shifted by applying a local gradient of a bias magnetic field to the signal train and transferred through a predetermined bubble transmission path.

(c)  従来技術と問題点 従来よりバブルメモリ素子は垂直方向に磁化容易軸を有
するガーネット、薄膜を磁性薄膜として使用し、永久磁
石によって得られる一定の垂直磁界(バイアス磁界HB
)中において、該磁性薄膜に接し各ビット位置に配置し
て得られるT1、シェブロンまたはハーフディスク形状
等の磁性体例えばパーマロイ薄片に与える面内回転磁界
あるいは導体パターンに通電して得られる@部磁界によ
って局部垂直磁界勾配を得て磁気薄膜における多数例え
ば〜10’個の有効磁気バブル全同時に効率よく移動す
ると共に磁気バブルの発生、消滅、拡大および分割等の
制御を選択的に行って磁性メモリとする。バブルメモリ
素子における動作例えば磁気バブル移動の動作特性に回
転磁界(HR)の大きさとバイアス磁界(HB)の大き
さに対して動作する領域を測定した第1図に示す磁気バ
ブルメモリ素子のマージン曲線の一例で評価される。曲
線により囲まれた内側の領域が一定の動作条件における
動作領域であり、同一バブルメモリ素子においても温度
あるいはHR周波数によって変化する。
(c) Conventional technology and problems Bubble memory elements have traditionally used garnet, a thin film with an axis of easy magnetization in the perpendicular direction, as a magnetic thin film, and a constant perpendicular magnetic field (bias magnetic field HB) obtained by a permanent magnet.
), T1 is obtained by placing it in contact with the magnetic thin film at each bit position, an in-plane rotating magnetic field is applied to a magnetic material such as a chevron or half-disk shape, for example, a permalloy thin piece, or a @-part magnetic field is obtained by applying current to a conductive pattern. By obtaining a local perpendicular magnetic field gradient, a large number of effective magnetic bubbles, for example ~10', in a magnetic thin film can be efficiently moved all at the same time, and the generation, disappearance, expansion, and division of magnetic bubbles can be selectively controlled to create a magnetic memory. do. Operation in a bubble memory element For example, the margin curve of the magnetic bubble memory element shown in Fig. 1 is a measurement of the operating region for the magnitude of the rotating magnetic field (HR) and the magnitude of the bias magnetic field (HB) in the operational characteristics of magnetic bubble movement. It is evaluated with an example. The inner region surrounded by the curve is the operating region under constant operating conditions, and even in the same bubble memory element, it changes depending on the temperature or HR frequency.

この動作領域を示すマージン曲線は該バブルメモリ素子
を構成するガーネット基板、磁性薄膜、磁性体薄片、H
BおよびHR等における物理量およびその誤差集積によ
って微妙に異なる。
The margin curve indicating this operating region is the garnet substrate, magnetic thin film, magnetic thin piece, H
It differs slightly depending on the physical quantities and their error accumulation in B, HR, etc.

従来バブルメモリの動作試験はHnの大きさとHBの大
きさを例えば第1図の中心域A、 B、 C。
In the conventional bubble memory operation test, the magnitude of Hn and the magnitude of HB were measured, for example, in the central areas A, B, and C in Figure 1.

Dの各条件点に設定して、それぞれの条件下において一
定のメモリ書込み/読取シ動作を行って性能を確認して
いるか外乱磁界等に対する動作保証、特に回転磁界に対
するしよう乱についての動作保証は考えられていない欠
点があった。
Is the performance confirmed by setting each condition point of D and performing certain memory write/read operations under each condition?Is there a guarantee of operation against disturbance magnetic fields, etc., especially against disturbances to rotating magnetic fields? There were some drawbacks that I hadn't thought about.

(d)  発明の目的 本発明の目的は従来例のしよう乱も加えられていなかっ
た磁気バブルメモリ素子の動作試験にお1 ける回転磁界にも選択的にじよう乱を加える手段を有し
、外乱磁界等に対する動作保証の方法を提供しようとす
るものである。
(d) Object of the Invention The object of the present invention is to have a means for selectively adding disturbance to a rotating magnetic field in an operation test of a magnetic bubble memory element, which has not been subjected to any disturbance in the conventional example; The purpose is to provide a method for guaranteeing operation against disturbance magnetic fields and the like.

(e)発明の構成 この目的は磁気バブルメモリ素子のメモリ動作試験装置
において、磁気バブルメモリ素子にデータを書込み/読
取る手段、回転磁界を与えるXおよびYコイルの駆動電
流に重畳して該駆動′6流に、且相互に非同期の任意の
周波数ならびに振幅を有するノイズ電流を重畳する手段
および重畳動作についてXおよびYコイルの何れか一方
または両方をオン・オフ制御する手段を備え、磁気バブ
ルメモリ素子の動作試験においてXおよびY回転磁界の
何れか一万オたは両方に非同期ノイズの重畳。
(e) Structure of the Invention The object of the present invention is to provide a memory operation test device for a magnetic bubble memory element, which is a means for writing/reading data into a magnetic bubble memory element, and a means for writing/reading data into a magnetic bubble memory element, by superimposing the driving currents of the X and Y coils to provide a rotating magnetic field to drive the magnetic bubble memory element. A magnetic bubble memory element, comprising means for superimposing a noise current having an arbitrary frequency and amplitude asynchronously with each other on the 6th current, and means for controlling on/off of either or both of the X and Y coils for the superimposition operation. During operation tests, asynchronous noise was superimposed on either or both of the X and Y rotating magnetic fields.

非重畳を選択しつ\書込み/読取シ試験を行うことを特
徴とする磁気バブルメモリ素子の試験方法を提供するこ
とによって達成することが出来る。
This can be achieved by providing a method for testing a magnetic bubble memory device characterized by selecting non-overlapping and performing a write/read test.

(f)  発明の実施例 以下本発明の一実施例について図面を参照しつ\説明す
る。第2図は本発明の一実施例における磁気バブルメモ
リ素子の試験方法によるブロック図、第3図はXコイル
またはYコイルの回転磁界を与える。駆動電流にノイズ
iiiを重畳したときの波形例を示す。
(f) Embodiment of the Invention An embodiment of the invention will be described below with reference to the drawings. FIG. 2 is a block diagram of a test method for a magnetic bubble memory device according to an embodiment of the present invention, and FIG. 3 shows a rotating magnetic field of an X coil or a Y coil. An example of a waveform when noise iii is superimposed on the drive current is shown.

図において1は制御部、2は回転磁界(I(R)駆動回
路+3X−7は発振器+4X+ yは増幅器、5x。
In the figure, 1 is a control unit, 2 is a rotating magnetic field (I(R) drive circuit +3X-7 is an oscillator +4X+, y is an amplifier, and 5x.

ytf変調トランス、6は磁気バブルメモリ素子および
6x、’Jは回転磁界用駆動コイルである。図、□−− 示省略したが磁気パズルメモリ素子の構成に必要なHB
用永久磁石その他の要素および駆動回路2を除くその他
の直接ならびに間接周辺回路は正常なデータの省込み/
読取り動作構成のために完備しているものとする。制御
部1は自蔵するプログラムに従って駆動回路2を制御し
、磁気バブルメモリ素子6を駆動して書込み/読取り動
作試験を行う。発振器3 Xy 3’ v増幅器4x、
’lおよび変調トランス5x、7がなければ従来の動作
試験に変りないが、こ\では制御部lは発振器3x+7
をオン/オフ制御して駆動回路2より送出するHR駆動
電流の周波数に非同期の任意の周波数を発振せしめ、増
幅器4x、yにおいて任意の振幅としたノイズ電流を変
調トランス5x、yを介し、駆動回路2よりコイル6X
17に与えられる駆wJ電流に重畳させる。尚制御部1
は必要によって発振器3x、7の何れか任意の一方また
は両方をオン/オフ制御すればコイル6x、yには任意
の周期で選択的に重畳。
ytf modulation transformer, 6 is a magnetic bubble memory element, and 6x, 'J is a rotating magnetic field drive coil. Figure, □-- Although not shown, HB necessary for the configuration of the magnetic puzzle memory element
Permanent magnets and other elements and other direct and indirect peripheral circuits other than drive circuit 2 are normal data save/
shall be complete for read operation configuration. The control unit 1 controls the drive circuit 2 according to a stored program, drives the magnetic bubble memory element 6, and performs a write/read operation test. Oscillator 3 Xy 3' v amplifier 4x,
'l and the modulation transformers 5x and 7 are not used, it is the same as the conventional operation test, but in this case, the control part l is the oscillator 3x+7.
is controlled on/off to oscillate an arbitrary frequency asynchronous to the frequency of the HR drive current sent out from the drive circuit 2, and drive the noise current with an arbitrary amplitude in the amplifiers 4x, y through the modulation transformers 5x, y. Coil 6X from circuit 2
It is superimposed on the drive wJ current given to 17. Furthermore, control section 1
is selectively superimposed on the coils 6x and y at an arbitrary period by controlling on/off any one or both of the oscillators 3x and 7 as necessary.

非重畳による駆動電流が与えられる。また第2図は変調
トランス5x、7による重畳動作を不平衡形によったが
必要によっては平衡形の変調方式によっても同様の結果
が得られることはいう迄もない。
A non-overlapping drive current is provided. Although FIG. 2 shows an unbalanced superimposition operation by the modulation transformers 5x and 7, it goes without saying that similar results can be obtained by using a balanced modulation system if necessary.

(g)  発明の詳細 な説明したように本発明によれば制御部により回転磁界
駆動回路を制御する他、発振!a衾制御して回転磁界用
駆動コイルの駆動直流に対して、その一方または両方に
選択的にノイズ電流が重畳されて(1妓気バブルメモリ
素子が駆動されるので効率良く外乱磁界に対する動作試
験を行うことが出来る。
(g) Detailed Description of the Invention According to the present invention, in addition to controlling the rotating magnetic field drive circuit by the control unit, oscillation! A Noise current is selectively superimposed on one or both of the driving direct current of the rotating magnetic field drive coil under control (1) Since the bubble memory element is driven, the operation test against the disturbance magnetic field can be efficiently performed. can be done.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来および本発明の一実施例における磁気バブ
ルメモリ素子のマージン曲〜の一例を示す図、第2図は
本発明の一実施例における磁気バブルメモリ素子の試験
方法によるブロック図および第3図はその回転磁界駆動
コイルに与えられるノイズ重畳の應動電流波形図を示す
。 図において1は制御部、2は回転磁界駆動回路。 3x、yけ発掘器+5X+yは変調トランス、 6は磁
気バブルメモリ素子および6x、yは回転磁界用駆動コ
イルである。 才1図 R 才2図
FIG. 1 is a diagram showing an example of the margin curve of a magnetic bubble memory device according to a conventional example and an embodiment of the present invention, and FIG. 2 is a block diagram and a diagram showing a test method for a magnetic bubble memory device according to an embodiment of the present invention. FIG. 3 shows a noise-superimposed vibration current waveform diagram applied to the rotating magnetic field drive coil. In the figure, 1 is a control unit, and 2 is a rotating magnetic field drive circuit. 3x and y are a modulation transformer, 6 is a magnetic bubble memory element, and 6x and y are rotating magnetic field drive coils. Age 1 figure R Age 2 figure

Claims (1)

【特許請求の範囲】[Claims] 磁気バブルメモリ素子のメモリ動作試験装置において、
磁気バブルメモリ素子にデータを書込み/読取る手段、
回転磁界を与えるXおよびYコイルの駆動電流に重畳し
て該駆動電流に、且相互に非同期の任意の周波数ならび
に振幅によるノイズ電流を重畳する手段および重畳動作
についてXおよびYコイルの何れか一方まだは両方をオ
ン・オフ制御する手段を備え、磁気バブルメモリ素子の
動作試験においてXおよびY回転磁界の何れか一方また
は両方に非同期ノイズの重畳、非重畳を選択し″)\書
込み/読取り試験を行うことを特徴とする磁気バブルメ
モリ素子の試験方法。
In a memory operation test device for magnetic bubble memory elements,
means for writing/reading data to/from a magnetic bubble memory element;
Regarding the means and superimposition operation for superimposing a noise current of an arbitrary frequency and amplitude that is asynchronous with each other on the drive current of the X and Y coils that provide a rotating magnetic field, either one of the X and Y coils is not yet used. is equipped with a means for controlling both on and off, and selects whether or not asynchronous noise is superimposed on either or both of the X and Y rotating magnetic fields in the operation test of the magnetic bubble memory element, and performs a write/read test. A method for testing a magnetic bubble memory device, characterized in that:
JP57129924A 1982-07-26 1982-07-26 Method for testing magnetic bubble memory element Pending JPS5922283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57129924A JPS5922283A (en) 1982-07-26 1982-07-26 Method for testing magnetic bubble memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57129924A JPS5922283A (en) 1982-07-26 1982-07-26 Method for testing magnetic bubble memory element

Publications (1)

Publication Number Publication Date
JPS5922283A true JPS5922283A (en) 1984-02-04

Family

ID=15021771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57129924A Pending JPS5922283A (en) 1982-07-26 1982-07-26 Method for testing magnetic bubble memory element

Country Status (1)

Country Link
JP (1) JPS5922283A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217287A (en) * 1983-05-25 1984-12-07 Fujitsu Ltd Testing method of bubble memory element
JPH01137464A (en) * 1987-11-20 1989-05-30 Sanyo Electric Co Ltd Video and audio reproducing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217287A (en) * 1983-05-25 1984-12-07 Fujitsu Ltd Testing method of bubble memory element
JPS622391B2 (en) * 1983-05-25 1987-01-19 Fujitsu Ltd
JPH01137464A (en) * 1987-11-20 1989-05-30 Sanyo Electric Co Ltd Video and audio reproducing device

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