JPS62226634A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS62226634A JPS62226634A JP6873086A JP6873086A JPS62226634A JP S62226634 A JPS62226634 A JP S62226634A JP 6873086 A JP6873086 A JP 6873086A JP 6873086 A JP6873086 A JP 6873086A JP S62226634 A JPS62226634 A JP S62226634A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- epoxy resin
- subassembly
- sealing layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000003822 epoxy resin Substances 0.000 claims abstract description 28
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 28
- 238000007789 sealing Methods 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 18
- 239000008188 pellet Substances 0.000 claims description 4
- 230000009974 thixotropic effect Effects 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000012778 molding material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- -1 imidazole compound Chemical class 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分計〕
本発明は、エポキシ樹脂封止層の成形に型を用いないよ
うにした樹脂モールド型の半導体素子の製造方法に係り
、特に比較的小型のダイオードなどの製造に好適な半導
体素子の製造方法に関する。[Detailed Description of the Invention] [Industrial Application] The present invention relates to a method for manufacturing a resin mold type semiconductor element in which a mold is not used for molding an epoxy resin sealing layer, and in particular, a method for manufacturing a semiconductor element of a relatively small size. The present invention relates to a method for manufacturing a semiconductor device suitable for manufacturing diodes and the like.
比較的小型のダイオードとしては、従来から樹脂モール
ド型のものが広く使用されている。Conventionally, resin molded diodes have been widely used as relatively small diodes.
そして、この樹脂モールド型のダイオードも。And this resin mold type diode too.
初期の頃はモールド成形用に型を用いたものが主として
使用されていたが、近年、型を用いないで封止層の成形
を行なった半導体素子が提案され、その例を特開昭５９
−１１３６４８号公報などに見ろことができろ。In the early days, molds were mainly used for molding, but in recent years, semiconductor devices in which the sealing layer was formed without using a mold have been proposed, and an example of this is described in JP-A-59
- You can see it in Publication No. 113648.
第２図はこのようなモールド成形型音用いないで製造さ
れたダイオードの例で、ＰＮ接合Ｊを有する半導体ペレ
ット１を１対になったリード電極２で挟持し、Ｐ ｂ
−Ｓ ｎ合金のろう材３で固着させた半導体のサブアセ
ンブリをエポキシ樹脂でモールドし、封止層４としたも
のである。なお、この図で、５はＮｉメッキ層、６はシ
リコン樹脂の表面安定化層、７はリード部、８４’！Ａ
ｇメッキ層であり、２ａｔＸヘツダ一部、２ｂはフラン
ジ部である。Figure 2 shows an example of a diode manufactured without using such a molding die, in which a semiconductor pellet 1 having a PN junction J is sandwiched between a pair of lead electrodes 2, and P b
A semiconductor subassembly fixed with a -Sn alloy brazing material 3 is molded with epoxy resin to form a sealing layer 4. In this figure, 5 is a Ni plating layer, 6 is a surface stabilizing layer of silicone resin, 7 is a lead part, and 84'! A
2atX is a part of the header, and 2b is a flange.
ところで、このモールド成形型を用いない半導体素子の
製造方法としては、従来から第３図に示す方法が用いら
れていた。By the way, as a method of manufacturing a semiconductor element without using a mold, a method shown in FIG. 3 has been used conventionally.
この第３図において、１０はサブアセンブリ、１１はモ
ールド材Ｍ？ニ一定量吐出するノズルであり、このとき
のモールド材Ｍとしてを工、分子内にエポキシ基を有す
るエポキシ樹脂と、このエポキシ樹脂１００モルに対し
て３〜１５モルの有機二塩基酸ジヒドラジドおよび同じ
く１００モルに対して２〜７モルのイミダゾール化合物
を含有させた。速硬化性でかつ揺変性に富む一液形のエ
ポキシ樹脂が用いられる。尚１表面安定化層６は図示を
省略している。In this FIG. 3, 10 is a subassembly, 11 is a molding material M? (2) It is a nozzle that discharges a certain amount, and the molding material M at this time is an epoxy resin having an epoxy group in the molecule, 3 to 15 moles of organic dibasic acid dihydrazide per 100 moles of this epoxy resin, and the same. The imidazole compound was contained in an amount of 2 to 7 moles per 100 moles. A one-component epoxy resin that is fast-curing and highly thixotropic is used. Note that the first surface stabilizing layer 6 is not shown.
サブアセンブリ１０はそのリード部が水平になるように
した上でこのリード部を軸として矢印のように所定の回
転速度で回転させられている。The subassembly 10 is rotated at a predetermined rotational speed as shown by an arrow around the lead portion with its lead portion being horizontal.
そこで、まず、第３図１ａｌに示すように、ノズル１１
から所定量のモールド材Ｍ（粘度の高い液状のもの）を
サブアセンブリ１０の中央部の半導体ベレットが存在す
る部分に滴下させる。このとき、ノズル１１からモール
ド材Ｍが吐出されてくる速度を適当な早さに保つと、サ
ブアセンブリ１０が回転しているため、同図１ｂｌに示
すようにモールド材Ｍが付着したあと、このモールド材
Ｍ＋、順次サブアセンブリに巻き取られてゆき、滴下が
終ったあと、同図＋Ｃ）に示すように、このモールド材
Ｍはサブアセンブリの半導体ペレット部分に、回転方向
にほぼ均一に分布した形となる。Therefore, first, as shown in FIG. 3 1al, the nozzle 11
A predetermined amount of molding material M (highly viscous liquid material) is dropped onto the central portion of the subassembly 10 where the semiconductor pellet is present. At this time, if the speed at which the molding material M is discharged from the nozzle 11 is maintained at an appropriate speed, since the subassembly 10 is rotating, after the molding material M has adhered as shown in FIG. The molding material M+ was wound around the subassembly one after another, and after the dripping was finished, this molding material M was distributed almost uniformly in the rotational direction on the semiconductor pellet part of the subassembly, as shown in Figure 1+C). It takes shape.
そこで、さらにサブアセンブリの回転を続けろと、第３
［Ｆ］ｌｄ）に示すように、モールド材であるエポキシ
樹脂の揺変性と、サブアセンブリの回転による遠心力に
よりモールド材（工球形に成形されてゆき、これに伴っ
て電極に形成されているフランジ部の方にも流れてゆき
、最終的には同図（ｅｌに示すように、はぼ球形となり
、このあと所定の硬化処理を施こせば樹脂モールド型半
導体素子が完成する。なお、詳細は上記した公報に開示
があるので省略する。So, the third one asked me to continue rotating the subassembly.
As shown in [F]ld), the thixotropy of the epoxy resin, which is the molding material, and the centrifugal force caused by the rotation of the subassembly cause the molding material to be formed into a spherical shape, and the electrode is formed accordingly. It also flows towards the flange part, and finally becomes a spherical shape as shown in the same figure (el). After that, if a prescribed hardening process is performed, a resin molded semiconductor element is completed. Since it is disclosed in the above-mentioned publication, it will be omitted.
しかしながら、この従来の方法では、第４図に示すよう
に、電極２のヘッダ一部２ａとフランジ部２ｂの間にボ
イドＢが発生し易く、信頼性の低下馨もたらす虞れが多
いという問題点があった。However, in this conventional method, as shown in FIG. 4, voids B are likely to occur between the header part 2a and the flange part 2b of the electrode 2, which may lead to a decrease in reliability. was there.
本発明の目的は、上記した従来技術の問題点を除き、モ
ールド材による封止層中でのボイドの発生を抑え、信頼
性に富んだ半導体素子を容易に得ることができろように
した半導体素子の製造方法を提供するにある。An object of the present invention is to eliminate the problems of the prior art described above, suppress the generation of voids in the sealing layer caused by the molding material, and easily obtain a highly reliable semiconductor element. The present invention provides a method for manufacturing an element.
〔問題点′ｌｔ解決″’ｆるための手段〕上記問題点は
、本発明によれば、エポキシ樹脂をサブアセンブリに滴
下して巻付ける工程を減圧状態で行ない、その後、大気
圧に戻してエポキシ樹脂の硬化？行なうことにより解決
される。[Means for solving the problem] According to the present invention, the above problem is solved by performing the process of dropping the epoxy resin onto the subassembly and wrapping it under reduced pressure, and then returning it to atmospheric pressure. The problem can be solved by curing the epoxy resin.
ボイドは減圧中に発生するので、その後での大気圧中で
の硬化中に押し潰されてしまい、硬化後の樹脂封止層に
はボイドが残らない。Since voids are generated during depressurization, they are crushed during subsequent curing at atmospheric pressure, and no voids remain in the resin sealing layer after curing.
以下１本発明による半導体素子の製造方法について、図
示の実施例により詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a semiconductor device according to the present invention will be described in detail below with reference to illustrated embodiments.
第１図は本発明の一実施ｆＱｆｔ示す説明図で、以下、
この第１図の工程層１から／１６５まで、順次説明する
。FIG. 1 is an explanatory diagram showing one implementation of the present invention fQft.
Process layers 1 to /165 in FIG. 1 will be sequentially explained.
まず、第１図の工程／１６１に示すように、サブアセン
ブＩＪＩ（ｌ減圧雰囲気中に保持し、第３図の従来例に
おけるｉり〜ｌｃ）の工程と同じようにしてサブアセン
ブリ１０）ｋ回転させながらエポキシ樹脂Ｍ４一定量０
滴下ノズルから吐出させ、それｔサブアセンブリ１０に
付着９巻き付ける。なお、この時の条件としては、雰囲
気温度５０〜１００℃、気圧０．１〜１．０Ｔｏｒｒが
適当である。First, as shown in step 161 in FIG. 1, the subassembly 10) is rotated in the same manner as in the process of subassembly IJI (l held in a reduced pressure atmosphere, and i to lc in the conventional example in FIG. 3). epoxy resin M4 constant amount 0
It is discharged from the dripping nozzle and wrapped around the subassembly 10 9 times. Note that the appropriate conditions at this time are an ambient temperature of 50 to 100°C and an atmospheric pressure of 0.1 to 1.0 Torr.
しかして、この工程では、エポキシ樹脂を巻き付けてい
るため、減圧下ではあるが、従来例の場合と同じくエポ
キシ樹脂中にボイドが残ってしまうことが多い。However, in this process, since the epoxy resin is wrapped around the epoxy resin, voids often remain in the epoxy resin, as in the conventional example, even though it is under reduced pressure.
次に、４２の工程に移り、ここでも減圧状態のままとし
、これも第３図の従来例におけるｔｄ）、 ｔｅｌの工
程と同じようにしてサブアセンブリ１０を引続き回転さ
せ、遠心力によりエポキシ樹脂Ｍの形状を球形に成形す
る。Next, the process moves to step 42, where the reduced pressure is maintained, and the subassembly 10 is continued to be rotated in the same manner as the steps td) and tel in the conventional example shown in FIG. 3, and the epoxy resin is Mold the shape of M into a sphere.
この時の条件は、雰囲気温度、気圧とも７Ｆ６１の場合
と同一で良い。The conditions at this time may be the same as in the case of 7F61 in terms of ambient temperature and atmospheric pressure.
続いて／Ｉ６３の工程に進むと、ここでは減圧状態から
大気圧中に戻し、引続きサブアセンブリ１０を回転させ
ながら今度ｔＸ４１．／％２のときより高い、例えば１
６０〜２００℃で加熱する。しかして、この工程に入ま
た最初の頃を工、まだエポキシ樹脂Ｍ ｔｘ硬化してい
ないから、この工程で、それまで減圧下にあった雰囲気
を大気圧（戻すと、減圧下で発生したエポキシ樹脂Ｍ中
のボイドは押し潰されてなくなってしまう。Next, proceeding to the step /I63, the pressure is returned from the reduced pressure state to atmospheric pressure, and while the subassembly 10 is being rotated, the next step is tX41. /%2, e.g. 1
Heat at 60-200°C. However, since the epoxy resin Mtx has not yet been cured at the beginning of this process, when the atmosphere that had been under reduced pressure is returned to atmospheric pressure (returning to atmospheric pressure), the epoxy resin generated under reduced pressure is The voids in the resin M are crushed and disappear.
こうして、加熱しながら数分間おくと、エポキシ樹脂Ｍ
の表面部分が少し硬化するから、そうなったら温度？下
げ、サブアセンブリの回転を止めても、エポキシ樹脂モ
ールドの形が変形しないようになる。なお、このときの
加熱の条件は、上記したように１６０〜２００℃が適当
である。In this way, if you leave it for a few minutes while heating, the epoxy resin M
The surface part of will harden a little, so what about the temperature? Even if the subassembly is lowered and the subassembly stops rotating, the shape of the epoxy resin mold will not be deformed. Note that the appropriate heating conditions at this time are 160 to 200°C, as described above.
その後、腐４の工程で一坦冷却したあと、ひき続いて屑
５の工程に進み、ここでは、封止層４としてモールドし
たエポキシ樹脂Ｍの性能が充分発揮されるように、予め
定められた所定の条件で硬化を行う。Thereafter, after uniform cooling in the step 4, the process proceeds to the step 5, in which a predetermined amount of water is used to fully demonstrate the performance of the epoxy resin M molded as the sealing layer 4. Curing is performed under predetermined conditions.
この実施例では、温度１２０℃〜１８０℃１時間３〜２
４時間で良好な封止特性が得られた。In this example, the temperature was 120°C to 180°C for 1 hour 3 to 2 hours.
Good sealing properties were obtained within 4 hours.
従って、この実施例によれば、エポキシ樹脂からなる封
止層４中にボイドが残存する虞れをなくすことができ、
高い信頼！！：ヲもった半導体素子ン容易に得ることが
できろ。Therefore, according to this embodiment, it is possible to eliminate the possibility that voids remain in the sealing layer 4 made of epoxy resin,
High trust! ! : It would be easy to obtain semiconductor devices with good quality.
以上説明したように、本発明によれば、エポキシ樹脂に
よる半導体素子の封止工程の一部を減圧下で行なうとい
う簡単な構成により、封止層中でのボイドを容易になく
すことができるから、従来技術の問題点に充分に対処し
、エポキシ樹脂の滴下、巻付け成形による半導体素子の
利点？充分に活用しながら機械的強度、耐湿性に優れ、
高い信頼性の半導体素子を製造することができる。As explained above, according to the present invention, voids in the sealing layer can be easily eliminated by a simple configuration in which a part of the sealing process of the semiconductor element with the epoxy resin is performed under reduced pressure. , to fully address the problems of the prior art, and the advantages of semiconductor devices made by dropping and wrapping epoxy resin? It has excellent mechanical strength and moisture resistance while being fully utilized.
Highly reliable semiconductor elements can be manufactured.
第１図は本発明による半導体素子の製造方法の一実施例
を示す説明図、第２図は本発明の対象となる樹脂モール
ド型半導体素子の一例を示す断面図、第３囚はエポキシ
樹脂の巻付け成形による製造方法の従来例を示す説明図
、第４図は従来例におけろ問題点？説明するための断面
図である。
１・・・・・・半導体ベレツ）、２ａ・・・・・・ヘッ
ダ一部、２ｂ・・・・・・フランジ部％４・・・・・・
封止層、１０・・・・・・サブアセンブリ、Ｍ・・・・
・・エポキシ樹脂。
第 ＩＦｊＡ
ＩＱ−−−−”ｊ７丁乞ン７す
Ｍ−−−一エボキシ撞功１
４−−−一蚤ゴ」＝１
第２図FIG. 1 is an explanatory diagram showing an example of the method for manufacturing a semiconductor device according to the present invention, FIG. An explanatory diagram showing a conventional example of a manufacturing method using wrap-forming, FIG. 4 shows problems with the conventional example. It is a sectional view for explanation. 1...Semiconductor bezel), 2a...Header part, 2b...Flange part%4...
Sealing layer, 10... Subassembly, M...
··Epoxy resin. No. IFjA IQ----"j7-chop-7suM---1 eboxy combination 1 4----1 flea go" = 1 Figure 2
Claims (1)
されたサブアセンブリを、その電極部材のリード線延長
方向を水平な軸として回転させながら速硬化性および揺
変性のエポキシ樹脂を滴下して樹脂封止層を形成させる
ようにした樹脂モールド型半導体素子の製造方法におい
て、エポキシ樹脂をサブアセンブリに滴下しそれに巻付
ける工程を減圧状態で行ない、その後のエポキシ樹脂の
硬化工程を大気圧のもとで行なうように構成したことを
特徴とする半導体素子の製造方法。 ２、特許請求の範囲第１項において、上記減圧状態が０
．１ないし１．０Ｔｏｒｒの範囲となるように構成した
ことを特徴とする半導体素子の製造方法。[Claims] 1. A subassembly in which a semiconductor pellet is brazed and sandwiched between a pair of electrode members is rotated with the direction in which the lead wires of the electrode members extend as a horizontal axis, and fast-curing and thixotropic epoxy In a method for manufacturing a resin-molded semiconductor device in which a resin sealing layer is formed by dropping resin, the step of dropping epoxy resin onto a subassembly and wrapping it around the subassembly is performed under reduced pressure, and the subsequent step of curing the epoxy resin 1. A method for manufacturing a semiconductor device, characterized in that the method is configured to perform the steps under atmospheric pressure. 2. In claim 1, the reduced pressure state is 0.
．． 1. A method of manufacturing a semiconductor device, characterized in that the pressure is within a range of 1 to 1.0 Torr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6873086A JPS62226634A (en) | 1986-03-28 | 1986-03-28 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6873086A JPS62226634A (en) | 1986-03-28 | 1986-03-28 | Manufacture of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62226634A true JPS62226634A (en) | 1987-10-05 |
Family
ID=13382200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6873086A Pending JPS62226634A (en) | 1986-03-28 | 1986-03-28 | Manufacture of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62226634A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016070722A1 (en) * | 2014-11-06 | 2016-05-12 | 周宗涛 | Uv epoxy resin instillation forming method and application thereof |
-
1986
- 1986-03-28 JP JP6873086A patent/JPS62226634A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016070722A1 (en) * | 2014-11-06 | 2016-05-12 | 周宗涛 | Uv epoxy resin instillation forming method and application thereof |
| US10711089B2 (en) | 2014-11-06 | 2020-07-14 | CollTech (Dongguan) Bonding Technology Co., Ltd. | UV epoxy resin instillation molding method and application thereof |
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