JPS62226407A - Manufacture of magnetic head - Google Patents

Abstract

PURPOSE:To obtain a magnetic head with an excellent magnetic characteristic at a high yield by forming a magnetic layer by an ion etching method using a batch twice and selectively removing a mask remaining after the 1st etching ends. CONSTITUTION:A magnetic thin film 6 is built up on an insulating layer 4 formed on a conductive layer 3. Next a resist pattern 7 in the desired shape of a magnetic layer is formed on the film 6, which is ion-etched. In that case it is etched by half its thickness. Then a resist pattern 8 is again patterned. In the consecutive ion etching, the resist pattern 8 is patterned so that a part around the gap part of the magnetic layer cannot be thin compared with other parts. The film 6 is ion-etched to form an upper magnetic layer 6. Such an inexpensive, high reliability magnetic head can be obtained at a high yield that employs a resist as an insulating layer and has a magnetic layer with an excellent magnetic characteristic.

Description

[Detailed description of the invention] [Industrial application field] This article relates to four methods of making Honmei Mei If bowl-ken heads.

[Conventional technology]

Conventionally, in a magnetic head formed by laminating an insulating layer, a lower magnetic layer, a conductor layer, an upper magnetic layer, and a holding layer on a substrate, a % Co-Zr based sputtered thin film with high magnetic permeability is used as the magnetic layer. And the vicinity of the gap part of the magnetic layer is magnetic II! If the structure is intentionally made thinner than the other parts of the l It was formed by an etching process.

In a structure where the vicinity of the magnetic gap is thinner than the other parts of the magnetic layer as shown in FIG. 2(e),
Magnetic saturation is difficult to occur and the generated magnetic field is steep.

[Problem that the invention seeks to solve]

However, the above-mentioned prior art cannot be applied to the formation of the upper magnetic layer of a magnetic head when a resist is used as the insulating layer 4. This is because when the resist pattern 1 is removed by the lift-off method, the insulating layer 4 is also removed at the same time, and the above-mentioned conventional technique uses an inorganic material (Sin, etc.) as the insulating layer.

This method has the problem that it can only be applied when materials such as At, O, etc.) or polyimide resins are used.

The above-mentioned inorganic materials and polyimide resins are disadvantageous in that they are expensive compared to resists, have poor step coverage, and are difficult to shape, and are therefore undesirable for use in the insulating layer of a magnetic head. Furthermore, if the step coverage of the insulating layer is poor, the conductor layer or the upper magnetic layer formed thereon will be cut or easily cut at the step, and the yield will naturally decrease.

SUMMARY OF THE INVENTION The present invention is intended to solve these problems, and its purpose is to provide a magnetic head with poor magnetic properties, low cost, and high reliability with a high gold yield.

[Means to solve all problems]

The method for manufacturing a magnetic head of the present invention includes forming an insulating layer, a lower magnetic layer, a conductor layer, an upper magnetic layer, a protective layer, and a protective layer on a substrate. In the manufacturing process of the magnetic head by laminating the magnetic head 1-4, at least one of the lower magnetic layer and the upper magnetic layer 1-1 is intentionally made thinner than other parts of the magnetic layer 1- in the vicinity of the gap part. Formed on the lower or upper magnetic /f# by two patch ion etching methods, and
After the second etching is completed, the etching mask material remaining on the magnetic layer is selectively etched in the same patch.
It is characterized by removal.

〔Example〕

FIG. 1 is a diagram showing the process of forming an upper magnetic layer in an embodiment of the present invention. In (a), the conductor layer 5 is formed to cover the gold and the insulation layer 4 (formed of resist)
A magnetic thin film 6 of CoZr is deposited on top in a sputtering device. In this example, the film was deposited to a thickness of 4 μm. Then (b
), a resist pattern 7 having a desired magnetic layer shape is formed on the magnetic thin film. Since the etching rate of the resist by ion etching is high in the tapered part, the thickness of the resist in this part must be 70 minutes, but in this example, the resist was spun so that the resist thickness was 6 μm in the tapered part. Coded. Next, at (0), CoZr is ion-etched using a thin gkAr gas. In this example, initial Co-zr
Etching was performed by half of the thickness of 4 μm, which is 2 μm. Ar gas pressure4. The etching rate of Co-Zr was 333 A/=, and it took 1 hour to etch 2 μm. Next, following this, resist etching is performed. Etching Ot gas instead of Ar gas. Gas pressure 4.0X10-4τo
rr, etching only the resist at a power of 300W. In this case, the resist etching rate is 500
0A/am, but C! That of 0-Zr is 100A/
jalI or less, and the selectivity is 50 or more. (C)
The resist remaining after the Co Zr etching at All of it is removed by gas etching, but the amount of Co Zr etched at this time is at most 1
000A, no problem. In (d), the resist pattern 8 is patterned again, but in ion etching with R<(e), the area near the gap of the magnetic layer is made thinner by 2 μm compared to other parts of the magnetic layer.
Pattern the resist. In (e), Co-Zr ion etching is performed in the same manner as in (C), and the upper magnetic j-
The formation of is completely completed. Does the resist pattern 8, which is an etching mask, still remain on the upper magnetic layer?
Since all the unnecessary parts of co Zr have been etched, the resist insulation wt 4 is already exposed, and when the remaining resist pattern 8 is etched away in the same way as in (C), the remaining resist pattern 8 must be removed by etching. The insulating layer is etched by the same thickness. but,
The damage to the insulating layer is small compared to removing all the remaining resist using a wet method. This is because during co-Zr etching, the surface of the resist pattern 80, which is an etching mask, is also hit by Ar plasma and altered in quality, making it difficult to remove the resist using the two-layer method. This is because the resist, which is an insulating layer that has not been removed, is more easily removed by the wet method, and if the resist pattern 8 is removed by the wet method, the insulating layer will be permanently damaged. Put it away.

〔Effect of the invention〕

As described above, according to the present invention, in the manufacturing process of a magnetic head, the magnetic layer is formed by two batches of ion etching, and the etching mask material remaining in the same batch after the first etching is completed. By selectively removing the resist, a magnetic head that uses resist as an insulating layer has a magnetic layer with excellent magnetic properties, and is inexpensive and highly reliable, which can be obtained at a high yield.

[Brief explanation of drawings]

1(a) to 1(e) are diagrams showing the manufacturing process of the magnetic layer in the present invention, and FIGS. 2(a) to 2(f) are diagrams showing the manufacturing process of the conventional magnetic layer. The diagrams shown in FIGS. 3(a) to 3(e) are diagrams showing the conventional manufacturing process of a magnetic layer. 1...Basis 2...Lower magnetic layer 3...Conductor layer 4...Insulating layer 5, 7.8...Resist pattern 6.9...Upper magnetic layer. Above (b) CC) (El Whisper 1 C) (C) Koto 2 times

Claims (1)

[Claims] On the substrate, an insulating layer, a lower magnetic layer, a conductor layer, an upper magnetic layer,
In the manufacturing process of a magnetic head by laminating a protective layer, a structure in which at least one of the lower magnetic layer and the upper magnetic layer is intentionally made thinner than other parts of the magnetic layer near the gap part. The lower or upper magnetic layer is formed by two batches of ion etching, and after the first etching is completed, the etching mask material remaining on the magnetic layer is selectively etched and removed in the same batch. A method of manufacturing a magnetic head.