JPS6222554B2 - - Google Patents
Info
- Publication number
- JPS6222554B2 JPS6222554B2 JP13816080A JP13816080A JPS6222554B2 JP S6222554 B2 JPS6222554 B2 JP S6222554B2 JP 13816080 A JP13816080 A JP 13816080A JP 13816080 A JP13816080 A JP 13816080A JP S6222554 B2 JPS6222554 B2 JP S6222554B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- gan
- insulating
- film
- pit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910002601 GaN Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000866 electrolytic etching Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 241000080590 Niso Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13816080A JPS5762578A (en) | 1980-10-01 | 1980-10-01 | Manufacture of light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13816080A JPS5762578A (en) | 1980-10-01 | 1980-10-01 | Manufacture of light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5762578A JPS5762578A (en) | 1982-04-15 |
| JPS6222554B2 true JPS6222554B2 (pl) | 1987-05-19 |
Family
ID=15215416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13816080A Granted JPS5762578A (en) | 1980-10-01 | 1980-10-01 | Manufacture of light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5762578A (pl) |
-
1980
- 1980-10-01 JP JP13816080A patent/JPS5762578A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5762578A (en) | 1982-04-15 |
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