JPS62224515A - Protection method for cutting artificial diamond coat - Google Patents
Protection method for cutting artificial diamond coatInfo
- Publication number
- JPS62224515A JPS62224515A JP6762886A JP6762886A JPS62224515A JP S62224515 A JPS62224515 A JP S62224515A JP 6762886 A JP6762886 A JP 6762886A JP 6762886 A JP6762886 A JP 6762886A JP S62224515 A JPS62224515 A JP S62224515A
- Authority
- JP
- Japan
- Prior art keywords
- coat
- artificial diamond
- diamond film
- cutting
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 41
- 239000010432 diamond Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000853 adhesive Substances 0.000 claims abstract description 6
- 230000001070 adhesive effect Effects 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000003786 synthesis reaction Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- 239000000498 cooling water Substances 0.000 abstract description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 6
- 239000005357 flat glass Substances 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000011010 flushing procedure Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005219 brazing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、放熱を要する半導体素子の放熱体として用い
る人工ダイヤモンド膜の切断保護方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for protecting an artificial diamond film from cutting, which is used as a heat dissipation body for a semiconductor element that requires heat dissipation.
本発明の概要を以下に述べる。 An outline of the present invention will be described below.
半導体素子の放熱体として用いる人工ダイヤモンド膜の
切断加工において、加工部に吹きつけられた冷却水によ
り発生する人工ダイヤモンド膜の剥離及び微小欠けを防
止することを目的に、人工ダイヤモンド膜上に剥離保護
板を接着し、剥離保護板と人工ダイヤモンド膜を同時に
切断する発明である。Peeling protection is applied to the artificial diamond film for the purpose of preventing peeling and micro-chips in the artificial diamond film caused by cooling water sprayed onto the processed area during cutting of the artificial diamond film used as a heat dissipation body for semiconductor devices. This invention involves bonding plates and cutting the peeling protection plate and the artificial diamond film at the same time.
従来、Ｓｉｓ ＳｉＣ％ 八１ｘ（ｈ 、５ｉＪ４．
ＢＮ、等の人工ダイヤモンド膜合成用基板上に、低圧
気相合成法等によって合成付着せしめた人工ダイヤモン
ド膜の切断加工は、人工ダイヤモンド膜が高硬度である
ことに加え、脆いという性質から、放電現象付加した研
削あるいは放電及び電解現象を付加した研削、又は、タ
イヤモンド砥石による一般研削法等が実施されていたが
、高硬度の人工ダイヤモンド膜と刃具との間に発生する
多大な熱の発生防止と、刃具摩耗を減少させる為に、研
削加工部に多量の冷却水を吹きつけながら研削すること
が必要とされ、この冷却なしでは、数ｍｍたりとて加工
することができなかった。Conventionally, Sis SiC% 81x (h, 5iJ4.
Cutting of an artificial diamond film synthesized and deposited on a substrate for synthetic diamond film synthesis such as BN by low-pressure vapor phase synthesis, etc. is difficult due to the high hardness and brittle nature of the artificial diamond film. Grinding with added phenomena, grinding with addition of electrical discharge and electrolytic phenomena, or general grinding using a tire grindstone have been carried out, but a large amount of heat is generated between the highly hard artificial diamond film and the cutting tool. In order to prevent this and reduce tool wear, it is necessary to spray a large amount of cooling water onto the grinding area during grinding, and without this cooling, it would not be possible to grind even a few millimeters.
しかしながら、従来の方法で切断せしめた人工ダイヤモ
ンド膜は、加工部に吹きつけられた冷却水の衝突エネル
ギーを受け、人工ダイヤモンド膜合成用基板からの剥離
及び微小欠けを生じ、直径１インチから直径６インチの
大きさをもつ人工ダイヤモンド膜合成用基板から１ｍｍ
角の製品を切り出すに際し、歩留りが２５〜３３％と低
い値となり製品のコストダウン化の大きな障害となって
いた。However, the artificial diamond film cut using the conventional method receives collision energy from the cooling water sprayed onto the processed area, resulting in peeling from the artificial diamond film synthesis substrate and micro-chips. 1 mm from the inch-sized artificial diamond film synthesis substrate
When cutting corner products, the yield was as low as 25 to 33%, which was a major obstacle to reducing product costs.
本発明は研削、切断加工時に吹きつける冷却水の衝突エ
ネルギーが原因で生ずる人工ダイヤモンド膜合成用基板
と人工ダイヤモンド膜の剥離を防止するため、切断前に
人工ダイヤモンド膜上に剥離保護板を接着して、加工歩
留まりを向上させる事を目的としたものである。In the present invention, in order to prevent separation between the artificial diamond film synthesis substrate and the artificial diamond film caused by collision energy of cooling water sprayed during grinding and cutting, a peeling protection plate is bonded onto the artificial diamond film before cutting. The purpose of this is to improve processing yield.
本発明は、人工ダイヤモンド膜合成用基板上に人工ダイ
ヤモンド膜を合成付着せしめた後に、該人工ダイヤモン
ド膜上に、有機接着剤やろう等の接合材料で、厚さ数十
ないしは数百μｍのガラス又はプラスチック製の剥離保
護板を接着し、剥離保護板及び接合材料、人工ダイヤモ
ンド膜、人工ダイヤモンド膜合成用基板を同時に切断す
ると、加工部に吹きつける冷却水の直接的な衝突エネル
ギーは、剥離保護板に発生するマイクロクランクが吸収
し、また剥離保護板を介した間接的衝突エネルギーは、
人工ダイヤモンド膜と剥離保護板との間に介在する接合
材料の弾性変形作用で吸収され、人工ダイヤモンド膜と
人工ダイヤモンド膜合成用基板の界面で発生する衝突力
は充分にやわらげられるのである。切断後の剥離保護板
は、周知のように接合材料を加熱あるいはアセトン、ト
リクレン等の有機溶剤に浸漬する等の方法で溶出するこ
とにより簡単に取り去ることが出来るのである。The present invention involves synthetically adhering an artificial diamond film onto a substrate for synthetic diamond film synthesis, and then applying a bonding material such as an organic adhesive or wax to a glass film with a thickness of several tens to hundreds of micrometers. Or, if a plastic peel protection plate is glued and the peel protection plate, bonding material, artificial diamond film, and artificial diamond film synthesis substrate are simultaneously cut, the direct collision energy of the cooling water sprayed onto the processed area will cause the peel protection The microcrank generated on the plate absorbs it, and the indirect collision energy via the peeling protection plate is
The collision force generated at the interface between the artificial diamond film and the substrate for synthesizing the artificial diamond film can be sufficiently alleviated by being absorbed by the elastic deformation of the bonding material interposed between the artificial diamond film and the peeling protection plate. As is well known, the peelable protective plate after cutting can be easily removed by eluting the bonding material by heating or dipping it in an organic solvent such as acetone or trichlene.
以下に本発明の代表的実施例を記す。 Representative examples of the present invention are described below.
実施例１
厚さ約６００μｍ、直径３インチのＳｉ単結晶上に、マ
イクロ波プラズマＣＶＤ法により、厚さ約１２μｍの人
工ダイヤモンド膜を合成付着させ、人工ダイヤモンド膜
上に、厚さ２００μｍ、直径３インチの白板ガラスを約
８０℃で溶解するろう材を１２０℃に加熱滴下した接合
材料を介して、室温固化させ接着した。Example 1 An artificial diamond film with a thickness of about 12 μm was synthesized and deposited on a Si single crystal with a thickness of about 600 μm and a diameter of 3 inches by microwave plasma CVD method. An inch of white plate glass was bonded through a bonding material in which a brazing filler metal that melts at approximately 80°C was heated to 120°C and solidified at room temperature.
この状態で、白板ガラス側から冷却水を吹きつけながら
ダイヤモンドディスクで１ｍｍ格子に切断加工した後、
アセトン洗浄により白板ガラス、接合材料を除去した後
に、人工ダイヤモンド合成用基板と人工ダイヤモンド膜
の界面の剥離を観察し歩留り率を算出したところ、８２
〜９５％に向」ニした。In this state, while spraying cooling water from the white plate glass side, cut into a 1mm grid using a diamond disk.
After removing the white plate glass and bonding material by acetone cleaning, we observed peeling at the interface between the artificial diamond synthesis substrate and the artificial diamond film and calculated the yield rate, which was 82.
It reached ~95%.
実施例２
厚さ６００．ｃｒｍ、直径３インチの５ｉｊｉ結晶上に
マイクロ波ＣＶＤ法により、厚さ２２μｍの人工ダイヤ
モンド膜を合成付着させ、エポキシ系接着剤、を介し、
該人工ダイヤモンド股上に、厚さ１１００ｐ、直径３イ
ンチのエポキシ樹脂板を接着した。Example 2 Thickness: 600. An artificial diamond film with a thickness of 22 μm was synthetically deposited on a 5iji crystal with a diameter of 3 inches using a microwave CVD method, and an epoxy adhesive was used.
An epoxy resin plate with a thickness of 1100p and a diameter of 3 inches was adhered to the artificial diamond crotch.
この状態でエポキシ樹脂板側からダイヤモンドディスク
で冷却水を吹きつけなから１．５ｍｍ角に切断し、エポ
キシ樹脂板を、メチルエチルケトンで接着剤を溶出する
事により除去した後に、Ｓｉ基板と人工ダイヤモンド膜
の界面における剥離を観察し歩留り率を算出したところ
、８１〜９７％に向上した。In this state, the epoxy resin plate was cut into 1.5 mm square pieces without spraying cooling water with a diamond disk from the side, and the epoxy resin plate was removed by eluting the adhesive with methyl ethyl ketone, and then the Si substrate and the artificial diamond film were removed. When the peeling at the interface was observed and the yield rate was calculated, it was improved to 81 to 97%.
以下の実施例に示したように、本発明方法に従った切断
方法の歩留りは、従来法の２〜３倍の歩留まり率を得ら
れ、製品のコストダウン化に与えられる効果はまことに
大である。As shown in the examples below, the yield rate of the cutting method according to the present invention is two to three times higher than that of the conventional method, and the effect of reducing product costs is truly significant. .
以上that's all
Claims (1)
らなる２層構造体の人工ダイヤモンド膜上に、予め接着
剤、ろう等の接合材料により剥離保誤板を接着して後、
剥離保護板、接合材料、人工ダイヤモンド膜、人工ダイ
ヤモンド膜合成用基板を同時に切断する事を特徴とする
人工ダイヤモンド膜の切断保護方法。After adhering a releasable protection plate in advance to the artificial diamond film of the two-layer structure consisting of the artificial diamond film synthesis substrate and the artificial diamond film using a bonding material such as adhesive or wax,
A method for cutting and protecting an artificial diamond film, characterized by simultaneously cutting a peeling protection plate, a bonding material, an artificial diamond film, and a substrate for synthesizing the artificial diamond film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6762886A JPS62224515A (en) | 1986-03-26 | 1986-03-26 | Protection method for cutting artificial diamond coat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6762886A JPS62224515A (en) | 1986-03-26 | 1986-03-26 | Protection method for cutting artificial diamond coat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62224515A true JPS62224515A (en) | 1987-10-02 |
Family
ID=13350433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6762886A Pending JPS62224515A (en) | 1986-03-26 | 1986-03-26 | Protection method for cutting artificial diamond coat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62224515A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9484225B2 (en) | 2003-05-06 | 2016-11-01 | Micron Technology, Inc. | Method for packaging circuits |
-
1986
- 1986-03-26 JP JP6762886A patent/JPS62224515A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9484225B2 (en) | 2003-05-06 | 2016-11-01 | Micron Technology, Inc. | Method for packaging circuits |
| US10453704B2 (en) | 2003-05-06 | 2019-10-22 | Micron Technology, Inc. | Method for packaging circuits |
| US10811278B2 (en) | 2003-05-06 | 2020-10-20 | Micron Technology, Inc. | Method for packaging circuits |
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