JPS62222670A - Organic thin-film element - Google Patents
Organic thin-film elementInfo
- Publication number
- JPS62222670A JPS62222670A JP61066289A JP6628986A JPS62222670A JP S62222670 A JPS62222670 A JP S62222670A JP 61066289 A JP61066289 A JP 61066289A JP 6628986 A JP6628986 A JP 6628986A JP S62222670 A JPS62222670 A JP S62222670A
- Authority
- JP
- Japan
- Prior art keywords
- organic thin
- electrode
- thin film
- film
- molecules
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 62
- 238000012546 transfer Methods 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 5
- 239000002120 nanofilm Substances 0.000 abstract description 36
- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 4
- -1 Cyanide compound Chemical class 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229960005190 phenylalanine Drugs 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- YRNWIFYIFSBPAU-UHFFFAOYSA-N 4-[4-(dimethylamino)phenyl]-n,n-dimethylaniline Chemical compound C1=CC(N(C)C)=CC=C1C1=CC=C(N(C)C)C=C1 YRNWIFYIFSBPAU-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001371 alpha-amino acids Chemical class 0.000 description 2
- 235000008206 alpha-amino acids Nutrition 0.000 description 2
- 239000008346 aqueous phase Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- CJVYYDCBKKKIPD-UHFFFAOYSA-N 1-n,1-n,2-n,2-n-tetramethylbenzene-1,2-diamine Chemical compound CN(C)C1=CC=CC=C1N(C)C CJVYYDCBKKKIPD-UHFFFAOYSA-N 0.000 description 1
- SLXKOJJOQWFEFD-UHFFFAOYSA-N 6-aminohexanoic acid Chemical compound NCCCCCC(O)=O SLXKOJJOQWFEFD-UHFFFAOYSA-N 0.000 description 1
- ZOGDWKYFYGEYAU-UHFFFAOYSA-N C(Cl)(Cl)Cl.ClC(C(=O)O)Cl Chemical compound C(Cl)(Cl)Cl.ClC(C(=O)O)Cl ZOGDWKYFYGEYAU-UHFFFAOYSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 150000003926 acrylamides Chemical class 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229940024606 amino acid Drugs 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229960002684 aminocaproic acid Drugs 0.000 description 1
- 229940009098 aspartate Drugs 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001661 cadmium Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195712 glutamate Natural products 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002828 nitro derivatives Chemical class 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- FHCPAXDKURNIOZ-UHFFFAOYSA-N tetrathiafulvalene Chemical compound S1C=CSC1=C1SC=CS1 FHCPAXDKURNIOZ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［発明の目的コ
（産業上の利用分野）
本発明は、有機薄膜を用いた素子に係り、特にドナー性
分子とアクセプタ性分子間の電荷移動現象を利用した新
しい機能素子に関する。[Detailed Description of the Invention] [Purpose of the Invention (Industrial Field of Application) The present invention relates to an element using an organic thin film, and particularly relates to a new function utilizing a charge transfer phenomenon between a donor molecule and an acceptor molecule. Regarding elements.
（従来の技術）
近年、ラングミーア・ブロジェット法（以下、ＬＢ法と
いう）に代表される有機分子の超薄膜形成技術の進展に
より、有機薄膜各種素子への応用技術開発が活発化して
いる。ダーラム（Ｄｕ ｈ ｒ ａｍ）大学のロバーツ
（Ｇ、Ｇ、Ｒｏｂｅｒｔｓ ）の、有機薄膜を用いたＭ
ＩＳ素子の研究を代表として、この釉の研究が各所で行
われている。しかし現状では、有機薄膜の性質を有効に
利用した新しい機能の素子は未だ実現されていない。(Prior Art) In recent years, with the progress of ultra-thin film formation technology of organic molecules represented by the Langmeer-Blodgett method (hereinafter referred to as LB method), the development of applied technology to various organic thin film devices has become active. Roberts (G, G, Roberts) of Durham University, using organic thin films.
Research on this glaze is being conducted in various places, with research on IS elements being a representative example. However, at present, no element with new functions that effectively utilizes the properties of organic thin films has yet been realized.
素子応用の面から見て有機材料の特性の中で特に注目さ
れるのは、分子間の電荷移動の現象である。有機材料に
は、イオン化ポテンシャルが小さく他の分子に電子を供
給して自らは正のイオン状態になシ易いドナー性分子と
、電子親和力が大きく他の分子から電子を受取り自らは
負のイオン状態にな夛易いアクセプタ性分子とがある。Among the characteristics of organic materials from the perspective of device applications, the phenomenon of intermolecular charge transfer is particularly noteworthy. Organic materials have donor molecules that have a small ionization potential and easily become positive ions by supplying electrons to other molecules, and donor molecules that have a high electron affinity and receive electrons from other molecules and become negative ions themselves. There are many acceptor molecules.
これら二種の分子間には電荷移動錯体と総称される化合
物が形成されることはよく知られている。例えば、ペレ
リンとテトラシアノキノジメタン（ＴＣＮＱ） との
間の化合物は電荷の移動しない中性分子からなる化合物
であるが、テトラメチルフェニレンジアミン（ＴＭＰＤ
）とＴＣＮＱではそれぞれ分子が正、負となったイオン
性の化合物となる。また、テトラチアフルバレン（ＴＴ
Ｆ）とクロラニルの場合のように、温度や圧力によって
中性からイオン性への転移が観測されることも知られて
いる。It is well known that a compound collectively called a charge transfer complex is formed between these two types of molecules. For example, the compound between pererin and tetracyanoquinodimethane (TCNQ) is a compound consisting of neutral molecules that do not transfer charge, but tetramethylphenylenediamine (TMPD)
) and TCNQ are ionic compounds with positive and negative molecules, respectively. In addition, tetrathiafulvalene (TT
It is also known that a transition from neutrality to ionicity is observed depending on temperature and pressure, as in the case of F) and chloranil.
この様な有機材料の電荷移動の現象を素子の動作原理と
して応用する場合、電荷移動の効率、応答速度、制御性
等の電荷移動の特性そのものが優れていること、及び電
荷移動を起こすような材料、素子が容易に形成できるこ
と、等が要求される。When applying the phenomenon of charge transfer in organic materials as the operating principle of an element, it is important that the charge transfer characteristics themselves, such as charge transfer efficiency, response speed, and controllability, are excellent, and that the charge transfer phenomenon that causes charge transfer is excellent. Materials and elements that can be easily formed are required.
電荷移動錯体結晶については、結晶作成が極めて難しい
こと、および電荷移動を外部で制御することが難しいこ
と、等の問題がある。また、金属と有機分子膜の間の電
荷移動を光や電界によ多制御してスイッチング素子ある
いはメ七り素子に利用する試みもなされているが、これ
らの電荷移動の効率、応答速度、寿命等に大きな問題を
抱えている。この様に電荷移動の現象は、素子応用の可
能性が期待されつつも、現状では未だ実用に供されてい
ない。There are problems with charge transfer complex crystals, such as that it is extremely difficult to create the crystal and that it is difficult to control charge transfer externally. In addition, attempts have been made to control the charge transfer between metals and organic molecular films using light or electric fields and use them in switching devices or switching devices, but the efficiency of charge transfer, response speed, and lifespan of these devices are difficult to achieve. etc. have big problems. Although the phenomenon of charge transfer is expected to have potential for device applications, it has not yet been put to practical use.
（発明が解決しようとする問題点）
以上のように有機薄膜は、新しい機能の素子への応用が
期待されながら、未だその様な素子は実現されていない
。(Problems to be Solved by the Invention) As described above, although organic thin films are expected to be applied to devices with new functions, such devices have not yet been realized.
本発明は上記の点に鑑みなされたもので、有機薄膜の電
荷移動現象ｆｆ：動作原理とした、新しい機能の有機薄
膜素子を提供することを目的とする。The present invention has been made in view of the above points, and an object of the present invention is to provide an organic thin film element with a new function based on the charge transfer phenomenon ff of an organic thin film as an operating principle.
［発明の構成］
（問題点を解決するための手段）
本発明にかかる有機薄膜素子は、ドナー性分子とアクセ
プタ性分子を含む有機薄膜の有機分子間の電荷移動現象
を利用する多端子素子であり、具体的には、有機薄膜に
電圧を印加するための第１ 、＠２の電極と、電圧印加
によるドナー性分子とアクセプタ性分子間の電荷移動現
象に伴う電位変化を出力する第３の電極の少なくとも３
つ電極を設けたことを特徴とする。[Structure of the Invention] (Means for Solving the Problems) The organic thin film device according to the present invention is a multi-terminal device that utilizes a charge transfer phenomenon between organic molecules of an organic thin film containing donor molecules and acceptor molecules. Specifically, there are first and second electrodes for applying voltage to the organic thin film, and a third electrode for outputting potential changes due to charge transfer phenomenon between donor molecules and acceptor molecules due to voltage application. at least 3 of the electrodes
It is characterized by having two electrodes.
ここで有機薄膜は、ドナー性分子を含む第１の有機薄膜
とアクセプタ性分子を含む第２の有機薄膜の積層構造と
してもよいし、ドナー性分子とアクセプタ性分子を共に
含む混合薄膜としてもよい。Here, the organic thin film may have a laminated structure of a first organic thin film containing donor molecules and a second organic thin film containing acceptor molecules, or may be a mixed thin film containing both donor molecules and acceptor molecules. .
また、本発明において好ましくは、有機薄膜としてＬＢ
法によ膜形成された単分子膜あるいはこれを複数層累積
した超薄膜を用いる。有機物質中を動く電子あるいはホ
ールの速度は一般に無機半導体中のそれより遅いが、数
又〜数１０Ｘという超薄膜を用いることにより、十分高
速度の電荷移動が可能であシ、ま九実際にＬＢ法により
その様な膜形成が可能である。Further, in the present invention, preferably LB is used as the organic thin film.
A monomolecular film formed by a method or an ultra-thin film formed by stacking multiple layers thereof is used. The speed of electrons or holes moving in organic materials is generally slower than that in inorganic semiconductors, but by using ultra-thin films of several to several tens of times, it is possible to transfer charges at a sufficiently high speed. Such a film can be formed by the LB method.
（作用）
本発明の構成によれば、第１．第２の電極によって有機
薄膜に電圧を印加することによりドナー性分子とアクセ
プタ性分子間で電荷移動が生じ、これによる有機薄膜内
の電位変化を第３の電極から出力することで、有機薄膜
のみを用いた新しい３端子のしきい値素子が得られる。(Function) According to the configuration of the present invention, first. By applying a voltage to the organic thin film with the second electrode, charge transfer occurs between donor molecules and acceptor molecules, and the resulting change in potential within the organic thin film is output from the third electrode, allowing only the organic thin film to move. A new three-terminal threshold device using this method can be obtained.
（実施例） 以下本発明の実施例を図面を参照して説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
第１図は一実施例の有機薄膜素子である。図において、
１はＡｔ電極（第３の電極）であシ、この上に絶縁性分
子を含む有機薄膜（絶縁性分子膜）２を介してドナー性
分子を含む第１の有機薄膜（ドナー性分子膜）３、アク
セプタ性分子を含む第２の有機簿膜（アクセプタ性分子
膜）４が順次積層され、更にこの上に絶縁性分子膜５が
積層されている。この絶縁性分子膜５上には、所定間隔
をおいて第１のＡｕ電極（第１の電極）６および第２の
Ａｕ電極（第２の電極）７が形成されている。FIG. 1 shows an example of an organic thin film device. In the figure,
Reference numeral 1 denotes an At electrode (third electrode), and a first organic thin film (donor molecular film) containing donor molecules is formed on the At electrode (third electrode) through an organic thin film (insulating molecular film) 2 containing insulating molecules. 3. A second organic film (acceptor molecular film) 4 containing acceptor molecules is sequentially laminated, and an insulating molecular film 5 is further laminated thereon. A first Au electrode (first electrode) 6 and a second Au electrode (second electrode) 7 are formed on this insulating molecular film 5 at a predetermined interval.
このように構成された素子の動作を次に説明する。第１
のＡｕ電極６と第２のＡｕ電極２間に、例えば第２のＡ
ｕ電極７を接地して第１のＡｕ電極６側が正となる電圧
を印加すると、あるしきい値以上でドナー性分子（Ｄ）
膜３からアクセプタ性分子（ト）膜４へ電子が遷移し、
それぞれＤ” 、 Ａ−のイオン状態となり、有機薄膜
の伝導度が増大する。但しこの現象は、第１のＡｕ電極
６とＡ／、電極１に挾まれた部分でのみ生じる。即ちＡ
ｔ電極１と第２のＡｕ電極７間については、Ａｔ電、匝
１と第１のＡｕ電極６の間とは逆方向の電界がかかるた
め、電子の遷移は生じない。そこでＡｔ電極１を出力電
極としてその電位変化を見ると、第１のＡｕ電極６の電
位があるしきい値に達することにより急激に上昇する。The operation of the element configured in this way will be described next. 1st
For example, between the Au electrode 6 and the second Au electrode 2,
When the u electrode 7 is grounded and a voltage is applied such that the first Au electrode 6 side is positive, donor molecules (D)
Electrons transfer from the membrane 3 to the acceptor molecule (g) membrane 4,
They become D" and A- ion states, respectively, and the conductivity of the organic thin film increases. However, this phenomenon occurs only in the portions sandwiched between the first Au electrode 6 and A/, and electrode 1. That is, A
Since an electric field is applied between the t-electrode 1 and the second Au electrode 7 in the opposite direction to that between the t-electrode 1 and the first Au electrode 6, no electron transition occurs. Therefore, when the At electrode 1 is used as an output electrode and its potential changes are observed, the potential of the first Au electrode 6 suddenly increases when it reaches a certain threshold value.
つまりこの素子はしきい値素子として機能することにな
る。In other words, this element functions as a threshold element.
この有機薄膜素子の具体的な製造工程例は次の通シであ
る。ポリーＬ−フェニルアラニンを１＝５の体積比のジ
クロル酢酸−クロロホルム溶液に約１１ｎ９／−の濃度
となるように溶解してＬＢ膜展開溶液を形成した。この
製膜分子は１３ ｄｙｎｅ／ｃｒｎ社の表面圧で凝縮膜
となることが表面圧−分子占有面積曲線から知られた。A specific example of the manufacturing process for this organic thin film element is as follows. An LB membrane developing solution was prepared by dissolving poly-L-phenylalanine in a dichloroacetic acid-chloroform solution having a volume ratio of 1=5 to a concentration of about 11n9/-. It was known from the surface pressure-molecule occupied area curve that this film-forming molecule forms a condensed film at a surface pressure of 13 dyne/crn.
ＬＢＢ形成装置は市販の垂直引上げ方式のものを用い、
展開、累積に先だって水相をｍ＝６．０に設定し、共存
塩として２価カドミウム塩を約０．０５ｍＭ添加し、水
温を２０℃に保った。Ａｔ電極１となるＡｔ膜を形成し
たガラス基板をとの水相に設置し、上記製膜分子を６０
０μｔトラニツト法により展開して、表面圧ｔ−２０ｄ
ｙｎａ ／αに設定して単分子膜を安定させた。そして
引上げ速度７０μｍ ７ｍ ｉ ｎでこの基板を引上げ
、単分子からなるＬＢ膜を累積した。累積数は１０層と
した。これが絶縁性分子膜２である。The LBB forming device uses a commercially available vertical pulling type device.
Prior to development and accumulation, the aqueous phase was set at m=6.0, about 0.05 mM of divalent cadmium salt was added as a coexisting salt, and the water temperature was maintained at 20°C. A glass substrate on which an At film was formed to become At electrode 1 was placed in an aqueous phase of
Developed by 0μt tranit method, surface pressure t-20d
The monolayer was stabilized by setting yna /α. Then, this substrate was pulled up at a pulling speed of 70 μm and 7 min to accumulate an LB film consisting of a single molecule. The cumulative number was 10 layers. This is the insulating molecular film 2.
ドナー性分子膜３としては、パラフェニレンジアミンと
ポリーＬ−フェニルアラニンｔｌ：ＩＫ混合したものを
上記と同様の方法で単層形成した。As the donor molecular film 3, a single layer of a mixture of paraphenylene diamine and poly L-phenylalanine tl:IK was formed in the same manner as above.
アクセプタ性分子膜４としては、テトラシアノキノジメ
タンをポリーＬ−フェニルアラニンと１：１に混合した
ものをやはり同様の方法で単層形成した。以上のドナー
性分子膜とアクセプタ性分子膜の累積を１０回繰返して
ＬＢ膜超超格子形成した。As the acceptor molecular film 4, a single layer of tetracyanoquinodimethane mixed with poly L-phenylalanine at a ratio of 1:1 was formed in the same manner. The above-described accumulation of the donor molecular film and acceptor molecular film was repeated 10 times to form an LB film super-superlattice.
この超格子上に、先の絶縁性分子膜２と同様の絶縁性分
子膜５を形成し、その上に直径０．３ ｗａｘのＡｕ電
極６．７を１ｆｆｉ１１間隔で形成した。An insulating molecular film 5 similar to the above-mentioned insulating molecular film 2 was formed on this superlattice, and Au electrodes 6.7 each having a diameter of 0.3 wax were formed thereon at intervals of 1ffi11.
第２図はこのように構成された素子に、第１のＡｕ電極
６と第２のＡｕ電極２間に電圧を印加した時の、Ａｔ電
極１と第２のＡｕ電極７間の′電圧変化を測定した結果
である。図から明らかなようにこの実施例の素子では、
第１のＡｕ電極６と第２のＡｕ 電極７間の電圧が３
ｖ近傍でＡｔ電極ｌと第２のＡｕ電極７間の電圧が急激
に立上がる特性を示す。FIG. 2 shows the voltage change between the At electrode 1 and the second Au electrode 7 when a voltage is applied between the first Au electrode 6 and the second Au electrode 2 in the element configured in this way. This is the result of measuring. As is clear from the figure, in the device of this example,
The voltage between the first Au electrode 6 and the second Au electrode 7 is 3
The voltage between the At electrode 1 and the second Au electrode 7 rises rapidly in the vicinity of v.
第３図は別の実施例の有機薄膜素子である。この素子で
は有機薄膜中に第３の電極が埋め込まれた構造としてい
る。即ちＡｔ電極（第１の電極）１１上に絶縁性分子膜
１２、アクセプタ性分子膜１３、ドナー性分子膜１４、
絶縁性分子膜１５を順次積層形成し、この上にＡｔ電極
（第３の電極）１６を形成した後、更にこの上に絶縁性
分子膜１７、ト°ナー性分子膜１８、アクセプタ性分♀
膜１９、絶縁性分子膜２０を積層し、その上にＡｔ電極
（第２の電極）２ノを形成している。Ａｔ電極１ノと１
６間のドナー性分子膜とアクセプタ性分子膜の積層ｊ＠
序と、Ａｔ′Ｉ！ｌ極１６と２極間６ドナー性分子膜と
アクセプタ性分子膜の積層順序とは異なっている。FIG. 3 shows another example of an organic thin film device. This element has a structure in which a third electrode is embedded in an organic thin film. That is, on the At electrode (first electrode) 11, an insulating molecular film 12, an acceptor molecular film 13, a donor molecular film 14,
After sequentially forming an insulating molecular film 15 and forming an At electrode (third electrode) 16 thereon, an insulating molecular film 17, a toner molecular film 18, and an acceptor component are formed on top of this.
A film 19 and an insulating molecular film 20 are laminated, and an At electrode (second electrode) 2 is formed thereon. At electrode 1 and 1
Lamination of donor molecular film and acceptor molecular film between 6＠
Introduction and At'I! The stacking order of the donor molecular film and the acceptor molecular film between the l pole 16 and the two poles is different.
このように構成された素子もしきい値素子として機能す
る。即ちＡｔ電極１１を接地してＡｔ電極２１に電圧を
印加すると、これが所定値以上でＡｔ電極１６上のドナ
ー性分子膜１８とアクセプタ性分子膜１９間で電子遷移
が生じる。Ａｔ電極１６下の部分ではこの様な電子遷移
は生じない。従ってＡｔ電極１６には、先の実施例と同
様にある点で急激に立上がる電位変化が現れる。The element configured in this manner also functions as a threshold element. That is, when the At electrode 11 is grounded and a voltage is applied to the At electrode 21, when the voltage exceeds a predetermined value, an electron transition occurs between the donor molecular film 18 and the acceptor molecular film 19 on the At electrode 16. Such electronic transition does not occur in the portion below the At electrode 16. Therefore, a potential change appears on the At electrode 16, which suddenly rises at a certain point, as in the previous embodiment.
第４図はその素子特性を示したものである。これは、第
３図の各有機薄膜を先の実施例と同様の材料、方法でＬ
Ｂ法により形成した素子について測定した結果である。FIG. 4 shows the device characteristics. Each organic thin film in FIG. 3 was made using the same materials and method as in the previous example
These are the results of measurements on elements formed by Method B.
図から明らかなように先の実施例の素子と同様の特性が
得られている。As is clear from the figure, characteristics similar to those of the device of the previous example are obtained.
本発明は上記実施例に限られるものではない。The present invention is not limited to the above embodiments.
例えば用いる有機薄膜はドナー性分子とアクセプタ性分
子間電荷移動現象を利用できるものであればよく、ドナ
ー性分子膜とアクセプタ性分子膜の積層構造の他、ドナ
ー性分子とアクセプタ性分子の混合膜を用いることがで
きる。また本発明は有機薄膜の伝導度特性の他、例えば
吸光率等の変化を利用する素子であって、二つの信号電
圧入力用′社標と制御電極を設けた多端子素子等に利用
することができる。For example, the organic thin film to be used may be one that utilizes the charge transfer phenomenon between donor molecules and acceptor molecules, and may have a laminated structure of donor molecules and acceptor molecules, or a mixed film of donor molecules and acceptor molecules. can be used. In addition to the conductivity characteristics of organic thin films, the present invention also relates to elements that utilize changes in absorbance, etc., and can be applied to multi-terminal elements equipped with two signal voltage input marks and a control electrode. I can do it.
本発明において用いられるドナー性分子とじては、以下
に示すようなものが挙げられる。Examples of donor molecules used in the present invention include those shown below.
（１） 以下のような構造式をもつフルバレン型ドナ
ー（２） 以下のような構造式をもつ含Ｓ複素環型ド
ナーｅ−８ｅ
Ｔｏ−Ｔ。(1) Fullvalene type donor having the following structural formula (2) S-containing heterocyclic donor e-8e To-T having the following structural formula.
Ｓ ここでφはフェニル基を表わす。S Here, φ represents a phenyl group.
（３）以下のような構造式をもつアミン型ドナーＨ２
テトラメチルベンジジン
（４）以下のような構造式をもつ金属化合物型ドナＦｅ
フエロセン
０・・・Ｈ・・・０
０・・・Ｈ・・・０
（５）以下のような構造式をもつシアニン色素ドナーＲ
Ｒ
ＲＲ
ＲＲ
ＲＲ
Ｍｅ Ｍｅ（６）以下の
ような構造式をもつ含Ｎ複素猿型ドナー−−−イ２ゝづ
、□ゝゝ−−− ポリアセチレン（１）から（７）に
示したドナー性分子はその構造式のままでも、おるいは
それを骨格として、ＣＨ，（ＣＨ２＋Ｆ１． ＣＨ辻Ｃ
Ｈ２量ＣＨ２＝ＣＨ’、堂ＣＨ２す（ｎ及びｐ 十ｑ
＋ｔは８以上）からなる疎水基を有した誘導体でも、あ
るいは−〇〇〇Ｈ、−ＯＨ。(3) Amine type donor H2 having the following structural formula Tetramethylbenzidine (4) Metal compound type donor Fe having the following structural formula
Ferrocene 0...H...0 0...H...0 (5) Cyanine dye donor R having the following structural formula
R RR RR RR Me Me (6) N-containing complex type donor with the following structural formula---I2ゝゝゝゝゝゝゝ--- Donor properties shown in polyacetylenes (1) to (7) The molecule can retain its structural formula, or use it as a skeleton to form CH, (CH2+F1. CH Tsuji C
H2 amount CH2 = CH', do CH2 (n and p 10q
+t is 8 or more), or -〇〇〇H, -OH.
−８ｏ、Ｈ、−ＣＯＯＲ’ 、−ＮＨ３，−１＃（Ｒ’
） Ｙ” （Ｙは八〇グン）からなる親水基を有する誘
導体でも、あるいはこれら疎水基と親水基を共に有する
誘導体でもよい。-8o, H, -COOR', -NH3, -1#(R'
) Y" (Y is 80 g), or a derivative having both a hydrophobic group and a hydrophilic group.
アクセプタ性分子としては、以下に示すような分子を用
いることができる。As the acceptor molecule, the following molecules can be used.
（８） 以下のような構造式をもつシアン化合物凰ア
クセグタ
ＮＣＣＮ
（９）以下のような構造式をもつキノン型アクセグタｅ
００ 以下のような構造式をもっニトロ化合物型アクセ
ゾタ
（８）からα０に示したアクセプタ性分子はその構造式
のままでも、あるいはそれを骨格として、ＣＨ５（ＣＨ
２垢、 ＣＨ３（−Ｃ）Ｉ２祐４ＣＨ２＝ＣＨ２ヤＣＨ
２九（ｎ及びｐ 十ｑ ＋ｔは８以上）からなる疎水基
を有した誘導体でも、あるいは−ＣＯＯＨ、−ＯＨ。(8) Cyanide compound accessor NCCN with the following structural formula (9) Quinone type accessor e 00 with the following structural formula e 00 From nitro compound type accessor (8) with the following structural formula to α0 The acceptor molecule shown can be used as its structural formula or as a backbone of CH5 (CH
2 marks, CH3 (-C) I2 Yu 4 CH2 = CH2 Ya CH
29 (n and p 10q + t are 8 or more), or -COOH, -OH.
−８Ｏ５Ｈｌ −ＣＯＯＲ’ 、−ＮＨ２，−Ｎ”（Ｒ
’）、Ｙ−（Ｙはハロゲン）からなる親水基を有する誘
導体でも、あるいはこれら疎水基と親水基を共に有する
誘導体でもよい。-8O5Hl -COOR', -NH2, -N''(R
'), Y- (Y is a halogen), or a derivative having both these hydrophobic and hydrophilic groups.
本発明でのドナー性分子膜やアクセプタ性分子膜におい
て、ドナー性分子やアクセプタ性分子と混合して用いら
れる絶縁性分子、あるいは絶縁性分子膜に用いられる絶
縁性分子としては、以下のような分子が用いられる。In the donor molecule film and acceptor molecule film in the present invention, the insulating molecules used in combination with the donor molecule and acceptor molecule, or the insulating molecules used in the insulating molecule film, are as follows. molecules are used.
αυ 下記一般式で表わされる置換可能々飽和炭化水素
誘導体
−Ｘ
ここで、Ｒは置換可能なＣＨ３（ＣＨｚ）ｎ−あるいは
ＣＨ，−ｆＣＨ２９ＣＨ２＝ＣＨ２屋ＣＨ２１（但し、
ｎ及びｐ＋ｑ＋ｔは８以上）からなる疎水基でおる。ま
たＸは親水基を表わし、−Ｃｏｏ）Ｉ 、 −ＯＨ、−
８ｏ３Ｈ。αυ Substitutable saturated hydrocarbon derivative -X represented by the following general formula, where R is substitutable CH3(CHz)n- or CH, -fCH29CH2=CH2yaCH21 (however,
n and p+q+t are 8 or more). Moreover, X represents a hydrophilic group, -Coo)I, -OH, -
8o3H.
−ＣＯＯＲ’ 、 −ＮＨ、−Ｎ”（Ｒ’）３Ｙ″″（
ＹはハＯ）ｆ ７ ）などが挙げられる。-COOR', -NH, -N"(R')3Y""(
Y is HaO)f7), and the like.
αり 種々の重合性分子
例えば、置換可能なアクリレート、メタクリレート、ビ
ニルエーテル、スチレン、ビニルアルコール、アクリル
アミド、アクリルなどのビニル重、合体。あるいは、ア
ラニン、グルタメート、アスパルテート、などのα−ア
ミノ酸、ε−アミノカプロン酸等のα−アミノ酸以外の
アミノ酸。ヘキサメチレンジアミン等のジアミンと、ヘ
キサメチレンジカルノン酸等のジカルデン酸１：１混合
物よシなるポリアミド重合体。Various polymerizable molecules such as vinyl polymers and polymers such as substitutable acrylates, methacrylates, vinyl ethers, styrene, vinyl alcohols, acrylamides, and acrylics. Alternatively, α-amino acids such as alanine, glutamate, aspartate, etc., and amino acids other than α-amino acids such as ε-aminocaproic acid. A polyamide polymer consisting of a 1:1 mixture of a diamine such as hexamethylene diamine and a dicardic acid such as hexamethylene dicarnoic acid.
これらの分子はそれ自身累積が可能な場合は単独で用い
ることができる。単独で製膜できないよ（＋４＋
うな分子はへで示したような単独で製膜できる絶縁性分
子と混合して用いる。These molecules can be used alone if they themselves can be accumulated. It is not possible to form a film by itself (+4+) Such molecules are used in combination with insulating molecules that can be formed into films by themselves, as shown in section 3.
［発明の効果コ
以上述べたように本発明によれば、ドナー性分子とアク
セプタ性分子を含む有機薄膜を用い、電圧印加によシド
ナー性分子とアクセプタ性分子間の電荷移動を利用する
有機薄膜素子であって、電圧を印加する二つの電極の他
に電荷移動の結果化じる電位変化を出力する電極を設け
て、新しいしきい値素子を提供することができる。[Effects of the Invention] As described above, according to the present invention, an organic thin film that uses an organic thin film containing donor molecules and acceptor molecules and utilizes charge transfer between donor molecules and acceptor molecules upon application of a voltage can be obtained. A new threshold element can be provided by providing, in addition to the two electrodes for applying a voltage, an electrode for outputting a potential change resulting from charge transfer.
第１図は本発明の一実施例の有機薄膜素子を示す図、第
２図はその特性を示す図、第３図は他の実施例の有機薄
膜素子を示す図、第４図はその特性を示す図である。
１・−Ａｔ電極（第３の電極）、２，５・・・絶縁性分
子膜、３・・・ドナー性分子膜、４・・・アクセプタ性
分子膜、６・・・Ａｕ電極（第１の電極）、２・・・Ａ
ｕ ’ｄｌ極（第２の電極）、１１・・・Ａｔ電極（第
１の電極）、１２．１５．１７．２０・・・絶縁性分子
膜、１３゜１９・・・アクセプタ性分子膜、１４．Ｉｌ
ｌ・・・ドナー性分子膜、１６・・・Ａｔ電極（第３の
電極）、２１・・・Ａｔ電極（第２の電極）。
出願人代理人 弁理士 鈴 江 武 彦Ｍ １
Ｍｔ
第 １ 図
Ｍ＋ −Ｍ２ ｎｏ電Ｆｉｆｆ）
第２ｒ３
−一一一一〜
−〜か ■■ ０FIG. 1 is a diagram showing an organic thin film device according to an embodiment of the present invention, FIG. 2 is a diagram showing its characteristics, FIG. 3 is a diagram showing an organic thin film device according to another embodiment, and FIG. 4 is a diagram showing its characteristics. FIG. 1.-At electrode (third electrode), 2, 5... Insulating molecular film, 3... Donor molecular film, 4... Acceptor molecular film, 6... Au electrode (first electrode), 2...A
u'dl pole (second electrode), 11... At electrode (first electrode), 12.15.17.20... insulating molecular film, 13°19... acceptor molecular film, 14. Il
1... Donor molecular film, 16... At electrode (third electrode), 21... At electrode (second electrode). Applicant's agent Patent attorney Takehiko Suzue M 1
Mt 1st Figure M+ -M2 no electric Fiff) 2nd r3 -1111~ -~? ■■ 0
Claims (7)
を有し、この有機薄膜に電圧を印加するための第１、第
２の電極と、電圧印加による前記ドナー性分子とアクセ
プタ性分子間の電荷移動現象による電位変化を出力する
第３の電極の少なくとも３個の電極を有することを特徴
とする有機薄膜素子。(1) It has an organic thin film containing a donor molecule and an acceptor molecule, first and second electrodes for applying voltage to the organic thin film, and a connection between the donor molecule and the acceptor molecule by applying a voltage. An organic thin film element comprising at least three electrodes, a third electrode outputting a potential change due to a charge transfer phenomenon.
３の電極を出力電極として、入力電圧が所定値で出力電
極の電位が急激に変化するしきい値素子を構成した特許
請求の範囲第１項記載の有機薄膜素子。(2) An input voltage is applied between the first and second electrodes, and the third electrode is used as an output electrode to constitute a threshold element in which the potential of the output electrode changes rapidly when the input voltage is a predetermined value. An organic thin film device according to claim 1.
および第２の電極が形成され、他方の面に第３の電極が
形成されている特許請求の範囲第１項記載の有機薄膜素
子。(3) A first layer on one surface of the organic thin film at a predetermined interval.
2. The organic thin film element according to claim 1, wherein a second electrode is formed on the other surface, and a third electrode is formed on the other surface.
に第２の電極が形成され、有機薄膜内部に第３の電極が
埋設されている特許請求の範囲第１項記載の有機薄膜素
子。(4) A first electrode is formed on one surface of the organic thin film, a second electrode is formed on the other surface, and a third electrode is embedded inside the organic thin film. Organic thin film device.
薄膜とアクセプタ性分子を含む第２の有機薄膜の積層構
造からなる特許請求の範囲第１項記載の有機薄膜素子。(5) The organic thin film element according to claim 1, wherein the organic thin film has a laminated structure of a first organic thin film containing donor molecules and a second organic thin film containing acceptor molecules.
子を共に含む混合薄膜からなる特許請求の範囲第１項記
載の有機薄膜素子。(6) The organic thin film element according to claim 1, wherein the organic thin film is a mixed thin film containing both donor molecules and acceptor molecules.
により形成された膜である特許請求の範囲第１項記載の
有機薄膜素子。(7) The organic thin film device according to claim 1, wherein the organic thin film is a film formed by the Langmuir-Prodgett method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61066289A JPS62222670A (en) | 1986-03-25 | 1986-03-25 | Organic thin-film element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61066289A JPS62222670A (en) | 1986-03-25 | 1986-03-25 | Organic thin-film element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62222670A true JPS62222670A (en) | 1987-09-30 |
Family
ID=13311516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61066289A Pending JPS62222670A (en) | 1986-03-25 | 1986-03-25 | Organic thin-film element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62222670A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5500537A (en) * | 1989-08-17 | 1996-03-19 | Mitsubishi Denki Kabushiki Kaisha | Field-effect transistor with at least two different semiconductive organic channel compounds |
| US6559473B1 (en) * | 1994-08-05 | 2003-05-06 | Hoechst Japan Limited | Light-emitting diodes with hetero-PN-junction |
| JP2006240991A (en) * | 2005-02-28 | 2006-09-14 | Momoya Co Ltd | Antioxidant using extract of green algae belonging to the genus monostroma as active ingredient |
-
1986
- 1986-03-25 JP JP61066289A patent/JPS62222670A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5500537A (en) * | 1989-08-17 | 1996-03-19 | Mitsubishi Denki Kabushiki Kaisha | Field-effect transistor with at least two different semiconductive organic channel compounds |
| US6559473B1 (en) * | 1994-08-05 | 2003-05-06 | Hoechst Japan Limited | Light-emitting diodes with hetero-PN-junction |
| JP2006240991A (en) * | 2005-02-28 | 2006-09-14 | Momoya Co Ltd | Antioxidant using extract of green algae belonging to the genus monostroma as active ingredient |
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