JPS62219928A - Manufacture of insulating film - Google Patents
Manufacture of insulating filmInfo
- Publication number
- JPS62219928A JPS62219928A JP6460986A JP6460986A JPS62219928A JP S62219928 A JPS62219928 A JP S62219928A JP 6460986 A JP6460986 A JP 6460986A JP 6460986 A JP6460986 A JP 6460986A JP S62219928 A JPS62219928 A JP S62219928A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- resin
- insulating film
- forming
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title description 5
- 229920005989 resin Polymers 0.000 claims abstract description 52
- 239000011347 resin Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 229920002050 silicone resin Polymers 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 abstract description 4
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 3
- 238000004528 spin coating Methods 0.000 abstract description 3
- 239000003960 organic solvent Substances 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract 1
- 238000001723 curing Methods 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- -1 argon ions Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
基板上に樹脂を塗布して絶縁膜を形成する方法において
、基板を、減圧雰囲気下で室温から４５０℃の範囲で段
階的に温度を制御し、該樹脂を硬化させる工程を有し、
短時間で良好な絶縁膜を得る。Detailed Description of the Invention [Summary] In a method of forming an insulating film by coating a resin on a substrate, the temperature of the substrate is controlled stepwise from room temperature to 450°C in a reduced pressure atmosphere, and the resin is coated with the resin. It has a step of curing the
Obtain a good insulating film in a short time.
〔産業上の利用分野〕
本発明は、樹脂を基板上に塗布し、硬化して絶縁膜を形
成する方法に係り、特に、半導体装置において使用され
る樹脂の硬化方法に関する。[Industrial Application Field] The present invention relates to a method of coating a resin on a substrate and curing it to form an insulating film, and particularly relates to a method of curing a resin used in a semiconductor device.
半導体集積回路の高集積化が進むにつれて、配線の微細
化、多層化が重要になっている。特に、多層配線技術が
不可欠な技術になりつつある。その中でも、特に樹脂を
用いた眉間絶縁膜の平坦化技術はプロセスが簡単化でき
る上、平坦性に優れていることから益々重要になってき
ている。2. Description of the Related Art As semiconductor integrated circuits become more highly integrated, miniaturization and multilayering of interconnections become important. In particular, multilayer wiring technology is becoming an essential technology. Among these, the technology for flattening the glabellar insulating film using resin is becoming increasingly important because it not only simplifies the process but also has excellent flatness.
例えば、従来半導体集積回路の形成に用いられる樹脂と
してポリイミド樹脂が良く知られている。For example, polyimide resin is well known as a resin conventionally used for forming semiconductor integrated circuits.
また、シリコーン系樹脂が半導体装置の製造に用いられ
る。例えば、次に化学式を示すシリコーン樹脂のＰｕＯ
２も半導体装置の製造に用いられている。Additionally, silicone resins are used in the manufacture of semiconductor devices. For example, the silicone resin PuO
2 is also used in the manufacture of semiconductor devices.
ＰｕＯ５の化学式
さらに、本出願人が先に提案した次に示す化学式をもつ
シリコーン樹脂のシリル化ポリメチルシルセスキオキサ
ン（以下“ＰＭＳＳ”と略す）（特願昭５９−１４９５
８６号）がある。The chemical formula of PuO5 Furthermore, the silicone resin silylated polymethylsilsesquioxane (hereinafter abbreviated as "PMSS") having the following chemical formula previously proposed by the applicant (Japanese Patent Application No. 59-1495)
No. 86).
このＰＭＳＳは塗布後加熱する時、温度が上がるにつれ
て、一旦溶けてその表面が平坦になり、その後硬化する
という特徴を持つことから、半導体装置表面の平坦化の
点で有利であり、今後、ひろく半導体装置の製造に通用
することが期待されている。When this PMSS is heated after coating, it melts once and the surface becomes flat as the temperature rises, and then it hardens. Therefore, it is advantageous in terms of flattening the surface of semiconductor devices, and will be widely used in the future. It is expected that it will be used in the manufacture of semiconductor devices.
従来、半導体装置等の眉間絶縁膜や保護膜に用いられて
いるこれらの樹脂の硬化方法としては、脂硬化方法にお
いては、不活性ガスによる置換雰囲気中で熱処理を行な
う方式がとられている。Conventionally, as a method of curing these resins used for glabellar insulating films and protective films of semiconductor devices, etc., a method of heat treatment in an atmosphere replaced with an inert gas has been adopted in the fat curing method.
ところが、従来の不活性雰囲気中の樹脂硬化方法による
と、樹脂硬化のために長時間（２時間以上）を要し、ま
た、膜にヒロック（小さな突起）が発生したり、膜に熱
歪がかかりクラックが発生し易い等の問題があった。ま
た、半導体装置の製造工程で施されるレジストと樹脂と
が反応する等、樹脂は有機酸に対して不安定であった。However, according to the conventional resin curing method in an inert atmosphere, it takes a long time (more than 2 hours) for the resin to harden, and it also causes hillocks (small protrusions) on the film and thermal strain on the film. There were problems such as the tendency for cracks to occur. Furthermore, the resin is unstable to organic acids, such as the resin reacting with the resist applied in the manufacturing process of semiconductor devices.
４冶鴫鳴ヨ凄千
〔問題点を解決するための手段〕
本発明においては、上記問題点を解決するために、半導
体装置等の基板上に絶縁膜を形成する方法において、基
板上に樹脂を塗布した後、真空中で室温から４５０℃の
範囲で段階的に温度＊制御を行ない、樹脂を硬化させる
樹脂硬化工程を有する絶縁膜の形成方法を提供する。4. Means for Solving the Problems In the present invention, in order to solve the above problems, in a method for forming an insulating film on a substrate of a semiconductor device, etc., a resin is formed on the substrate. The present invention provides a method for forming an insulating film, which includes a resin curing step in which the resin is cured by applying the resin and then controlling the temperature in a stepwise manner from room temperature to 450° C. in vacuum.
また、さらに、本発明においては、基板上に樹脂を塗布
した後、上記と同様な温度制御を行ない樹脂を硬化させ
るにあたり、不活性ガスあるいは反応性ガスの雰囲気下
で、ガス圧を０．０１〜１０Ｔｏｒｒの範囲で制御し、
高周波電力の印加によるプラズマを発生せしめ、該プラ
ズマ中に基板上の樹脂表面を暴露し、樹脂を硬化させる
工程を含む絶縁膜の形成方法を提供する。Furthermore, in the present invention, after coating the resin on the substrate, when curing the resin by performing temperature control similar to the above, the gas pressure is set to 0.01 in an atmosphere of an inert gas or a reactive gas. Control in the range of ~10 Torr,
A method for forming an insulating film is provided, which includes a step of generating plasma by applying high-frequency power, exposing a resin surface on a substrate to the plasma, and curing the resin.
また、さらに、本発明においては、基板上に樹脂を塗布
した後、上記と同様な温度制御を行ない樹脂を硬化させ
るにあたり、基板上の樹脂表面に１０ｅＶ〜３００にｅ
νの荷電粒子を照射し、樹脂を硬化させる工程を含む絶
縁膜の形成方法を提供する。Furthermore, in the present invention, after coating the resin on the substrate, when curing the resin by performing temperature control similar to the above, the resin surface on the substrate is heated to an eV of 10 eV to 300 eV.
Provided is a method for forming an insulating film, which includes a step of curing a resin by irradiating charged particles of ν.
また、さらに、本発明においては、上記各樹脂の硬化方
法を併用して樹脂を硬化させる工程を含む絶縁膜の形成
方法を提供する。Furthermore, the present invention provides a method for forming an insulating film, which includes a step of curing the resin by using the above resin curing methods in combination.
上記、本発明の絶縁膜の形成方法によれば、真空ベータ
、ガスプラズマ、又は荷電粒子のエネルギを利用して樹
脂の膜質を改変することができ、従来の問題であった樹
脂にクラックが発生することを抑えることができる。ま
た、その硬化に要する処理時間を従来の不活性ガス中で
のベータ処理に比較して大幅に短縮することを可能にす
る。According to the above method for forming an insulating film of the present invention, the film quality of the resin can be modified using the energy of vacuum beta, gas plasma, or charged particles, and cracks occur in the resin, which was a problem in the past. You can refrain from doing that. Furthermore, the processing time required for curing can be significantly shortened compared to conventional beta processing in an inert gas.
実施例１
以下に第１の実施例として、先に化学式を示したシリコ
ーン樹脂の一つであるＰＭＳＳを窒素プラズマを利用し
て硬化し絶縁膜を形成する実施例を示す。Example 1 Below, as a first example, an example will be shown in which PMSS, which is one of the silicone resins whose chemical formula is shown above, is cured using nitrogen plasma to form an insulating film.
第１図に示すのが、本実施例に用いた装置で、プラズマ
ＣＶＤ装置を利用している。なお装置としては、プラズ
マ発生及び加熱ができる装置ならば他の装置を使用する
ことが可能である。第１図において、１は半導体基板で
あり、ヒータ３を内蔵したサセプタ２の上に載置されて
いる。４は該サセプタの対向電極であり、両者間には５
の高周波（ＲＦ）電源が接続されている。６はガス導入
ロア及び真空ポンプに接続される排気口８を有する反応
管である。What is shown in FIG. 1 is the apparatus used in this example, which utilizes a plasma CVD apparatus. Note that other devices can be used as long as they are capable of generating and heating plasma. In FIG. 1, reference numeral 1 denotes a semiconductor substrate, which is placed on a susceptor 2 having a heater 3 built therein. 4 is a counter electrode of the susceptor, and 5 is between them.
A radio frequency (RF) power source is connected. 6 is a reaction tube having a gas introduction lower and an exhaust port 8 connected to a vacuum pump.
以下に、この装置を用いて、基板１上に樹脂層を形成し
硬化せしめる工程を示す。Below, a process of forming and curing a resin layer on the substrate 1 using this apparatus will be described.
■ 基板１にシリコーン樹脂のＰＭＳＳをスピン塗布す
る。このスピン塗布は、有機溶剤に熔かしたＰＭＳＳを
スピナー上の半導体基板にスピンコードするものである
。■ Spin coat silicone resin PMSS on the substrate 1. In this spin coating, PMSS dissolved in an organic solvent is spin-coded onto a semiconductor substrate on a spinner.
■ 第１図の装置に基板１をセットする。この装置は基
板１の温度を、室温乃至４５０℃の範囲で制御出来、且
つプラズマを発生する装置である。■ Set the board 1 in the device shown in Figure 1. This device is a device that can control the temperature of the substrate 1 in the range of room temperature to 450° C. and generates plasma.
■ 基板ｌをセットした後、速やかに装置内を真空に引
く。真空度はベーキグ中Ｉ Ｘ １Ｏ−２Ｔｏｒｒ乃至
それ以下とする。■ After setting the substrate l, immediately evacuate the inside of the apparatus. The degree of vacuum is set to I x 10-2 Torr or less during baking.
■ 第２図に示した温度シーケンスにより基板の温度を
制御する。１００℃程度１０分間加熱して溶剤を蒸発せ
しめる。１００℃程度から３００℃〜３５０℃に温度を
上げ、この３００℃〜３５０℃に所定の時間（２０〜３
０分）保つ。(2) Control the temperature of the substrate according to the temperature sequence shown in FIG. Heat to about 100°C for 10 minutes to evaporate the solvent. Raise the temperature from about 100°C to 300°C to 350°C, and keep it at this 300°C to 350°C for a specified period of time (20 to 350°C).
0 minutes).
■ この３００℃〜３５０℃に保たれた第２図のＡの時
点において、窒素（Ｎ２）ガスを導入し、ガス圧をＱ、
３ Ｔｏｒｒに制御し、Ｂにおいて高周波電力（１３，
５６Ｍ Ｈｚ 、２００Ｗ 、高周波電力密度０．３Ｗ
／ｃｍ２ ）を印加してプラズマを発生させ、基板１上
に塗布された樹脂をプラズマでたたき硬化させる。■ At point A in Figure 2, where the temperature is maintained at 300°C to 350°C, nitrogen (N2) gas is introduced and the gas pressure is set to Q,
3 Torr, and high frequency power (13,
56MHz, 200W, high frequency power density 0.3W
/cm2) to generate plasma, and the resin coated on the substrate 1 is struck by the plasma and hardened.
■ 第２図Ｃの時点において、高周波電力の印加を停止
し、窒素ガスにより装置内をリークし、基板を室温まで
冷却する。(2) At the time point shown in FIG. 2C, the application of high frequency power is stopped, nitrogen gas is leaked into the apparatus, and the substrate is cooled to room temperature.
以上のようにして形成された樹脂層を調べた結果、ＰＭ
ＳＳの表面では、メチル基が減少していることが認めら
れた。As a result of examining the resin layer formed as described above, it was found that PM
It was observed that methyl groups were reduced on the surface of SS.
実施例２
第２の実施例として、シリコーン樹脂ＰＭＳ Ｓをアル
ゴンイオンを利用して硬化する実施例の工程を示す。Example 2 As a second example, the process of curing silicone resin PMS S using argon ions will be described.
■ 半導体基板にＰＭＳＳをスピン塗布する。■ Spin coat PMSS on the semiconductor substrate.
■ 基板の温度を室温乃至４５０℃の範囲で制御でき、
且つイオンを基板上に照射できる装置内にＰＭＳＳを塗
布した基板をセットする。本実施例に用いる装置の概略
を第３図に示す。第３図において、半導体基板３１は加
熱手段３３を備えるサセプタ３２上に載置され、イオン
源３４からのイオンが照射されるようになっている。こ
のイオン照射装置３５の内部は真空ポンプで十分な真空
度に排気されるようになっている。■ The temperature of the substrate can be controlled within the range of room temperature to 450℃,
Furthermore, the substrate coated with PMSS is set in a device that can irradiate the substrate with ions. FIG. 3 shows an outline of the apparatus used in this example. In FIG. 3, a semiconductor substrate 31 is placed on a susceptor 32 equipped with a heating means 33, and is irradiated with ions from an ion source 34. The inside of this ion irradiation device 35 is evacuated to a sufficient degree of vacuum by a vacuum pump.
■ 半導体基板３１をセットした後、速やかにイオン照
射装置３５内を真空にする。真空度（ベーキング中）は
Ｉ Ｘ １０−’ Ｔｏｒｒ乃至これ以下にする。(2) After setting the semiconductor substrate 31, immediately evacuate the inside of the ion irradiation device 35. The degree of vacuum (during baking) is set to I x 10-' Torr or less.
■ 第２図に示した温度シーケンスにより、基板の温度
を制御する。(2) Control the temperature of the substrate according to the temperature sequence shown in FIG.
■ 第２図の中のＢの時点において、アルゴンイオンを
基板１上に照射し、樹脂を硬化させる。(2) At time point B in FIG. 2, argon ions are irradiated onto the substrate 1 to harden the resin.
アルゴンイオンの加速電圧は５ｏｏｖ、アルゴンイオン
電流密度は０．５ ｍ＾／ ｃｍ ”とした。The argon ion acceleration voltage was 5 oov, and the argon ion current density was 0.5 m^/cm''.
■ 第２図のＣの時点において、アルゴンイオンの照射
を停止し、窒素ガスにより装置内をリークし、基板１を
室温まで冷却する。(2) At time point C in FIG. 2, argon ion irradiation is stopped, nitrogen gas is leaked from inside the apparatus, and the substrate 1 is cooled to room temperature.
実施例３
上記実施例１．２と同様に基板上に樹脂を塗布した後、
真空度１×１０″″’ Ｔｏｒｒの真空中で第２図と同
様な温度シーケンスで室温から４５０℃の範囲内で段階
的に温度凄−制御を行なうことのみ（真空中ベータ処理
）で、樹脂を硬化させ、絶縁膜の形成を行なうことがで
きる。ベーク処理に要する真空度の範囲は１×１０″″
２Ｔｏｒｒ程度乃至それ以下、ベータ処理時間は６０分
程度であり、この場合にも従来よりベータ処理に要する
時間を短縮することができる。Example 3 After coating the resin on the substrate in the same manner as in Example 1.2 above,
In a vacuum with a degree of vacuum of 1 x 10'''' Torr, the resin can be processed by controlling the temperature stepwise within the range from room temperature to 450°C using the same temperature sequence as shown in Figure 2 (beta treatment in vacuum). can be cured to form an insulating film. The degree of vacuum required for baking is 1 x 10''
At about 2 Torr or less, the beta processing time is about 60 minutes, and in this case as well, the time required for the beta processing can be reduced compared to the conventional method.
以上、実施例としてシリコーン樹脂のＰＭＳ Ｓを用い
た例を示したが、本発明は広く種々の樹脂に通用できる
ものであり、例えば、前記シリコーン樹脂のＰＬＯ３に
も同様に通用可能である。また、シリコーン樹脂以外の
樹脂、例えばポリイミド樹脂への通用法も考えられる。Although an example using the silicone resin PMS S has been shown above, the present invention can be applied to a wide variety of resins, and for example, can be applied to the silicone resin PLO3 as well. It is also conceivable that the present invention can be applied to resins other than silicone resins, such as polyimide resins.
以上のように、本発明によれば、樹脂を短時間に硬化さ
せることができ、且つ硬化の工程で発生する熱歪を大き
く減少することが可能となり、クラックの発生を無くす
ことができる。またヒロックの発生も無くすことができ
る。さらに、本発明により硬化した膜は、電気的絶縁性
、耐薬品性に優れ、金属との密着性も良好である等、信
頼性が高い。As described above, according to the present invention, the resin can be cured in a short time, and the thermal distortion generated in the curing process can be greatly reduced, thereby making it possible to eliminate the occurrence of cracks. It is also possible to eliminate the occurrence of hillocks. Furthermore, the film cured according to the present invention has high reliability, such as excellent electrical insulation and chemical resistance, and good adhesion to metals.
第１図は本発明の第１の実施例に用いた装置の模式的構
造図、
第２図は本発明の第１及び第２の実施例の温度シーケン
スを示す線図、
第３図は本発明の第２の実施例に用いたイオン照射装置
の概略図である。
■は半導体基板、２はサセプタ、３はヒータ、４はサセ
プタの対向電極、５は高周波（ＲＦ）電源、６は反応管
、７はガス導入口、８は真空ポンプ。Fig. 1 is a schematic structural diagram of the device used in the first embodiment of the present invention, Fig. 2 is a diagram showing the temperature sequence of the first and second embodiments of the present invention, and Fig. 3 is a diagram of the device used in the first embodiment of the present invention. FIG. 2 is a schematic diagram of an ion irradiation device used in a second embodiment of the invention. (2) is a semiconductor substrate, 2 is a susceptor, 3 is a heater, 4 is a counter electrode of the susceptor, 5 is a radio frequency (RF) power source, 6 is a reaction tube, 7 is a gas inlet, and 8 is a vacuum pump.
Claims (7)
おいて、 該基板上に樹脂を塗布した後、該基板を、減圧雰囲気下
におき、室温から４５０℃の範囲で段階的に温度を制御
し、該樹脂を硬化させる工程を有することを特徴とする
絶縁膜の形成方法。(1) In a method of coating a resin on a substrate to form an insulating film, after coating the resin on the substrate, the substrate is placed in a reduced pressure atmosphere and heated in stages from room temperature to 450°C. A method for forming an insulating film, comprising the steps of controlling and curing the resin.
おいて、 前記段階的に温度を制御し、樹脂を硬化させる工程が、
不活性ガスあるいは反応性ガスの雰囲気下で、ガス圧を
０．０１〜１０Ｔｏｒｒの範囲で制御し、高周波電力の
印加によるプラズマを発生せしめ、該プラズマ中に基板
上の樹脂表面を暴露する工程を含むことを特徴とする絶
縁膜の形成方法。(2) In the method for forming an insulating film according to claim 1, the step of controlling the temperature in stages and curing the resin comprises:
In an atmosphere of inert gas or reactive gas, gas pressure is controlled in the range of 0.01 to 10 Torr, plasma is generated by applying high frequency power, and the resin surface on the substrate is exposed to the plasma. A method for forming an insulating film, the method comprising:
おいて、 前記段階的に温度を制御し、樹脂を硬化させる工程が、
基板上の樹脂表面に１０ｅＶ〜３００ＫｅＶの荷電粒子
を照射する工程を含むことを特徴とする絶縁膜の形成方
法。(3) In the method for forming an insulating film according to claim 1, the step of controlling the temperature in stages and curing the resin comprises:
A method for forming an insulating film, the method comprising the step of irradiating a resin surface on a substrate with charged particles of 10 eV to 300 KeV.
おいて、 前記段階的に温度を制御し、樹脂を硬化させる工程が、
不活性ガスあるいは反応性ガスの雰囲気下で、ガス圧を
０．０１〜１０Ｔｏｒｒの範囲で制御し、高周波電力の
印加によるプラズマを発生せしめ、該プラズマ中に基板
上の樹脂表面を暴露する工程、及び、基板上の樹脂表面
に１０ｅＶ〜３００ＫｅＶの荷電粒子を照射する工程の
両工程を含むことを特徴とする絶縁膜の形成方法。(4) In the method for forming an insulating film according to claim 1, the step of controlling the temperature in stages and curing the resin comprises:
In an atmosphere of an inert gas or a reactive gas, controlling the gas pressure in the range of 0.01 to 10 Torr, generating plasma by applying high frequency power, and exposing the resin surface on the substrate to the plasma, and a step of irradiating the resin surface on the substrate with charged particles of 10 eV to 300 KeV.
に記載された絶縁膜の形成方法において、前記樹脂がシ
リコーン系樹脂であることを特徴とする絶縁膜の形成方
法。(5) The method for forming an insulating film according to any one of claims 1 to 4, wherein the resin is a silicone resin.
に記載された絶縁膜の形成方法において、前記樹脂がポ
リイミド樹脂であることを特徴とする絶縁膜の形成方法
。(6) The method for forming an insulating film as set forth in any one of claims 1 to 4, wherein the resin is a polyimide resin.
に記載された絶縁膜の形成方法において、前記基板が半
導体基板であり、該基板上に塗布され、硬化された樹脂
により層間絶縁膜或いは保護膜が形成されることを特徴
とする絶縁膜の形成方法。(7) In the method for forming an insulating film according to any one of claims 1 to 6, the substrate is a semiconductor substrate, and a resin coated on the substrate and cured is used. A method for forming an insulating film, characterized in that an interlayer insulating film or a protective film is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6460986A JPS62219928A (en) | 1986-03-20 | 1986-03-20 | Manufacture of insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6460986A JPS62219928A (en) | 1986-03-20 | 1986-03-20 | Manufacture of insulating film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62219928A true JPS62219928A (en) | 1987-09-28 |
| JPH0588540B2 JPH0588540B2 (en) | 1993-12-22 |
Family
ID=13263172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6460986A Granted JPS62219928A (en) | 1986-03-20 | 1986-03-20 | Manufacture of insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62219928A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01193847A (en) * | 1988-01-29 | 1989-08-03 | Konica Corp | Coating mechanism and device for forming protective layer of id card having said coating mechanism |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4918587A (en) * | 1972-06-13 | 1974-02-19 | ||
| JPS5852330A (en) * | 1981-08-26 | 1983-03-28 | サンド・アクチエンゲゼルシヤフト | Originally colored polymer material |
| JPS58158952A (en) * | 1982-03-17 | 1983-09-21 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPS5957437A (en) * | 1982-09-28 | 1984-04-03 | Fujitsu Ltd | Forming method for silicon oxide film |
| JPS59178749A (en) * | 1983-03-30 | 1984-10-11 | Fujitsu Ltd | Wiring structure |
| JPS6024037A (en) * | 1983-07-20 | 1985-02-06 | Comput Basic Mach Technol Res Assoc | Formation of polyimide series resin film |
-
1986
- 1986-03-20 JP JP6460986A patent/JPS62219928A/en active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4918587A (en) * | 1972-06-13 | 1974-02-19 | ||
| JPS5852330A (en) * | 1981-08-26 | 1983-03-28 | サンド・アクチエンゲゼルシヤフト | Originally colored polymer material |
| JPS58158952A (en) * | 1982-03-17 | 1983-09-21 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPS5957437A (en) * | 1982-09-28 | 1984-04-03 | Fujitsu Ltd | Forming method for silicon oxide film |
| JPS59178749A (en) * | 1983-03-30 | 1984-10-11 | Fujitsu Ltd | Wiring structure |
| JPS6024037A (en) * | 1983-07-20 | 1985-02-06 | Comput Basic Mach Technol Res Assoc | Formation of polyimide series resin film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01193847A (en) * | 1988-01-29 | 1989-08-03 | Konica Corp | Coating mechanism and device for forming protective layer of id card having said coating mechanism |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0588540B2 (en) | 1993-12-22 |
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