JPS62213109A - Manufacture of tantalum chip capacitor - Google Patents
Manufacture of tantalum chip capacitorInfo
- Publication number
- JPS62213109A JPS62213109A JP5613986A JP5613986A JPS62213109A JP S62213109 A JPS62213109 A JP S62213109A JP 5613986 A JP5613986 A JP 5613986A JP 5613986 A JP5613986 A JP 5613986A JP S62213109 A JPS62213109 A JP S62213109A
- Authority
- JP
- Japan
- Prior art keywords
- tantalum
- lead frame
- lead
- capacitor element
- tantalum wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims description 43
- 239000003990 capacitor Substances 0.000 title claims description 30
- 229910052715 tantalum Inorganic materials 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000003466 welding Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000013307 optical fiber Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims 1
- 238000005245 sintering Methods 0.000 claims 1
- 238000007739 conversion coating Methods 0.000 description 8
- 238000000576 coating method Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000010956 nickel silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、半田メッキを施したリードフレームを使用し
たモールドタイプのタンタルチップコンデンサを製造す
る方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a method of manufacturing a mold type tantalum chip capacitor using a lead frame plated with solder.
（従来の技術）
タンタルチップコンデンサの製造は、一般に次の様な工
程にて行なわれる。(Prior Art) Tantalum chip capacitors are generally manufactured through the following steps.
まず、タンタルの金属粉末を、円筒或いは直方体に圧縮
成形して焼結体とした後、この焼結体に化成電圧により
化成皮膜を施して陽極体を形成し、この陽極体表面に二
酸化マンガン等の半導体層を形成し、その最外部に導体
にて陰極面を形成してコンデンサ素子を形成する。First, tantalum metal powder is compression-molded into a cylinder or a rectangular parallelepiped to form a sintered body, and then a chemical conversion coating is applied to this sintered body using a chemical conversion voltage to form an anode body.The surface of this anode body is coated with manganese dioxide, etc. A capacitor element is formed by forming a semiconductor layer, and forming a cathode surface of a conductor on the outermost side of the semiconductor layer.
一方、加工性、機械的強度、線膨張係数の適合製等から
、ニッケルや洋銀を使用してリードフレームを形成し、
このリードフレームの表面には、チップ部品としての半
田付は性を改善するために半田メッキを施す。On the other hand, lead frames are formed using nickel or German silver due to their workability, mechanical strength, and linear expansion coefficient.
The surface of this lead frame is plated with solder to improve solderability as a chip component.
そして、コンデンサ素子の陽極リードであるタンタル線
を、リードフレームの陽極リードと溶接（スポット抵抗
溶接等）し、コンデンサ素子の陰極面を、銀粒子を含む
導電接着剤によりリードフレームの陽極リードに接着す
ることで、コンデンサ素子とリードフレームとを接続し
、以上の工程により構成された単体に、エポキシ等の外
装樹脂にてモールド成形を行い、タンタルチップコンデ
ンサを完成する。Then, the tantalum wire that is the anode lead of the capacitor element is welded (spot resistance welding, etc.) to the anode lead of the lead frame, and the cathode surface of the capacitor element is bonded to the anode lead of the lead frame with a conductive adhesive containing silver particles. By doing so, the capacitor element and the lead frame are connected, and the unit constructed through the above steps is molded with an exterior resin such as epoxy to complete a tantalum chip capacitor.
以上の様なタンタルチップコンデンサの製造方法におい
て、コンデンサ素子１は、第３図（Ａ）に示す様に、ア
ルミニウムベルト２にその陽極リードであるタンタル線
３の先端が溶接された形で成形されているため、これを
リードフレームと溶接する際には、第３図（Ｂ）に示す
様に、タンクル線３を一定の寸法にて切断し、この切断
部にて、第３図（Ｃ）に示すごとく、リードフレームの
陽極リード４に溶接する。同時に、コンデンサ素子１の
陰極面を、リードフレームの陰極リード５に接続する。In the method for manufacturing a tantalum chip capacitor as described above, the capacitor element 1 is formed by welding the tip of the tantalum wire 3, which is the anode lead, to the aluminum belt 2, as shown in FIG. 3(A). Therefore, when welding this to the lead frame, the tank wire 3 is cut to a certain size as shown in Fig. 3 (B), and at this cut part, as shown in Fig. 3 (C). Weld it to the anode lead 4 of the lead frame as shown in FIG. At the same time, the cathode surface of the capacitor element 1 is connected to the cathode lead 5 of the lead frame.
しかしながら、この様なコンデンサ索子１の陽極リード
であるタンタル線３とリードフレームの陽極リード４と
の溶接工程には、次の様な問題点が存在していた。However, the following problems existed in the process of welding the tantalum wire 3, which is the anode lead of the capacitor cord 1, and the anode lead 4 of the lead frame.
即ち、タンタル線３には、電気絶縁物である化成皮膜が
形成されているため、この皮膜を壊して溶接する必要が
あるが、この場合、皮膜の完全な破壊が難しく、この結
果溶接強度が低下してしまう。特に、高圧のものでは皮
膜が厚いため、更に顕著な影響を受ける。この様に不完
全な皮膜除去による溶接強度の低下は、使用青白の短縮
にもつながるため、従来、溶接部分にあける完全な皮膜
除去を行なうために、各種の方法が使用されている。こ
の様な化成皮膜の除去方法としては、機械的にこれを削
り取る方法、又は、機械的にタンクル線を潰しながら皮
膜を破壊する方法等がおるが、いずれも作業中における
皮膜除去状態の管理が困難であり、皮膜除去が不完全な
場合にもこれを発見できず、溶接強度の問題を確実に解
決するまでには至っていない。That is, since the tantalum wire 3 has a chemical conversion coating that is an electrical insulator, it is necessary to destroy this coating before welding. However, in this case, it is difficult to completely destroy the coating, and as a result, the welding strength decreases. It will drop. In particular, high-pressure products have thicker coatings, so they are more significantly affected. The reduction in welding strength due to such incomplete removal of the film also leads to a reduction in service life, so various methods have been used to completely remove the film from the welded area. Methods for removing such a chemical conversion film include mechanically scraping it off, and mechanically destroying the film while crushing the tank wire, but both methods require control of the state of film removal during work. It is difficult to detect incomplete removal of the film, and the problem of welding strength has not been reliably solved.
一方、タンタル線の溶接処理の前工程で、タンタル線の
溶接部分に化成皮膜を形成しない様な処理が実現できれ
ば、皮膜を除去する必要なく前記の様な一連の問題点を
解決できるが、現在の技術において、この様な処理を行
なうことは不可能である。On the other hand, if a process that does not form a chemical conversion film on the welded part of the tantalum wire could be achieved in the pre-processing process of tantalum wire welding, the series of problems mentioned above could be solved without the need to remove the film. With this technology, it is impossible to perform such processing.
（発明が解決しようとする問題点）
上記の様に、従来のタンタルチップコンデンサの製造方
法には、タンタル線の溶接部分における化成皮膜の完全
な除去が困難でおることから、溶接強度が低下する問題
が存在していた。(Problems to be Solved by the Invention) As mentioned above, in the conventional manufacturing method of tantalum chip capacitors, it is difficult to completely remove the chemical conversion film at the welded part of the tantalum wire, resulting in a decrease in weld strength. A problem existed.
本発明は、この様な問題を解決するために提案されたも
のであり、その目的は、容易な手段でタンタル線の溶接
部分における化成皮膜を完全に除去可能とすることによ
り、安定した）Ｈ接強度を維持し、使用青白の長期化を
実現し得る様なタンタルチップコンデンサの製造方法を
提供することである。The present invention has been proposed to solve such problems, and its purpose is to completely remove the chemical conversion coating on the welded portion of tantalum wire by easy means, thereby creating a stable)H It is an object of the present invention to provide a method for manufacturing a tantalum chip capacitor that can maintain contact strength and realize a long period of use.
［発明の構成］
（問題点を解決するための手段）
本発明によるタンタルチップコンデンサの製造方法は、
タンタル線の溶接部分にレーザ光を照射することを特徴
としている。[Structure of the Invention] (Means for Solving the Problems) The method for manufacturing a tantalum chip capacitor according to the present invention includes:
It is characterized by irradiating the welded part of the tantalum wire with laser light.
（作用）
本発明は、以上の構成を有することにより、レーザ光の
照射で、容易且つ確実にタンタル線の化成皮膜を除去で
きるため、安定した溶接強度を得られる。(Function) With the above configuration, the present invention can easily and reliably remove the chemical conversion coating of the tantalum wire by laser beam irradiation, thereby achieving stable welding strength.
（実施例）
以上説明した様な本発明によるタンタルチップコンデン
サの製造方法の一実施例を第１図（Ａ＞（Ｂ）を用いて
具体的に説明する。(Example) An example of the method for manufacturing a tantalum chip capacitor according to the present invention as described above will be specifically described using FIG. 1 (A>(B)).
＊実施例の構成
第１図（Ａ）に示す様に、図示しないＹＡＧレーザ装置
に接続された光ファイバ６により、レーザ光りを導光し
、このレーザ光を単レンズ７により集光し、この単レン
ズ７の焦点Ｆ付近にタンタル線３をおき、レーザ光りを
照射する。この時、照射部分には、ガス吹出し口８より
Ｎ２ガスを吹付ける。なお、タンタル線３を単レンズ７
の焦点Ｆ付近に配置し焦点Ｆ配置としないのは、焦点Ｆ
においてレーザ照射を行うと、タンタル線３がスポット
的に溶融してしまうからでおる。また、タンタル線３の
レーザ光り照射範囲は、第１図（Ｂ）に示す様に、コン
デンサ素子１から１ｍｍの間隔をおいた１ｍｍの範囲と
する。*Configuration of Example As shown in FIG. 1 (A), laser light is guided by an optical fiber 6 connected to a YAG laser device (not shown), and this laser light is focused by a single lens 7. A tantalum wire 3 is placed near the focal point F of a single lens 7 and irradiated with laser light. At this time, N2 gas is sprayed from the gas outlet 8 onto the irradiated area. In addition, the tantalum wire 3 is used as a single lens 7.
The reason why the focal point F is not placed near the focal point F is that the focal point F
If laser irradiation is performed in this case, the tantalum wire 3 will be melted in spots. Further, the laser beam irradiation range of the tantalum wire 3 is set to a range of 1 mm with an interval of 1 mm from the capacitor element 1, as shown in FIG. 1(B).
本実施例の作用
以上の構成条件の下でレーザ照射を行うと、タンタル線
３の照射面は勿論、裏面までレーザ光が回り込むため、
化成皮膜の除去が効果的に行われる。When laser irradiation is performed under the above configuration conditions, the laser light goes around not only the irradiated surface of the tantalum wire 3 but also the back surface.
Chemical conversion coatings are effectively removed.
この様な作用を実証するために、レーザ照射処理を施し
た後、第２図に示す様に、皮膜除去部分の両面に直流電
源のプラスとマイナスの端子９Ｐ。In order to demonstrate this effect, after laser irradiation treatment was performed, the positive and negative terminals 9P of a DC power source were connected to both sides of the part from which the film was removed, as shown in FIG.
９Ｍを接触させて導通試験を行ったところ、レーザ照射
部分の皮膜が完全に除去されていることが確認された。When a continuity test was conducted by contacting 9M, it was confirmed that the film in the laser irradiated area was completely removed.
さらに、別の確認方法として、レーザ処理を施したタン
タル線と、生のタンタル線とを、それぞれ同じ条件でリ
ードフレームに溶接して、溶接可否及び溶接後の強度試
験を行ったところ、同等の値が１ｑられ、このことから
も皮膜が完全に除去されていることが確認された。Furthermore, as another confirmation method, we welded a laser-treated tantalum wire and a raw tantalum wire to a lead frame under the same conditions, and conducted a weldability test and strength test after welding. The value was 1q, which also confirmed that the film was completely removed.
本実施例の効果
以上の様に、本実施例によれば、レーザ光を照射すると
いう簡単な工程により、タンタル線の溶接部分の化成皮
膜を完全に除去でき、従って溶接強度が安定し、製造し
たタンタルチップコンデンサの使用寿命を延長できる。Effects of this Example As described above, according to this example, the chemical conversion coating on the tantalum wire welding area can be completely removed by the simple process of irradiating the tantalum wire with a laser beam, thus stabilizing the welding strength and manufacturing. The service life of tantalum chip capacitors can be extended.
しかも、レーザ照射においては、各種の条件を制御でき
るため、化成皮膜の厚さに関係なく、的確な皮膜除去が
可能でおり、ざらに、機械的に皮膜を破壊するのに比べ
、無接触で皮膜除去を行えることから、タンタルチップ
コンデンサの特性に影響を及ぼすこともなく、また、装
置自体に関しても、機械的摩耗部がないため、長期に渡
り安定した皮膜除去が行える利点がある。加えて、レー
ザ光の量や、使用するレンズの寸法など各種の条件を調
整することにより、作業時間の短縮化が可能であり、ま
た、同作業工程の自動化も容易に行える。Furthermore, since various conditions can be controlled during laser irradiation, it is possible to accurately remove the chemical conversion coating regardless of its thickness, and it is possible to remove the chemical conversion coating without contact, compared to rough or mechanical destruction of the coating. Since the film can be removed, the characteristics of the tantalum chip capacitor are not affected, and since there is no mechanically worn part of the device itself, there is an advantage that the film can be removed stably over a long period of time. In addition, by adjusting various conditions such as the amount of laser light and the dimensions of the lenses used, it is possible to shorten the working time, and the same working process can be easily automated.
なお、本発明に使用するレーザ装置やレンズ等の構成は
適宜選択可能でおり、Ｎ２ガスの吹出し部等をも備えた
総合的なレーザ照射装置を構成することも考えられる。Note that the configuration of the laser device, lens, etc. used in the present invention can be selected as appropriate, and it is also possible to configure a comprehensive laser irradiation device that also includes an N2 gas blowing part and the like.
［′発、明の効果］
以上説明した様に、本発明のタンタルチップコンデンサ
の製造方法によれば、タンタル線の溶接部分に、レーザ
光を照射するという手段により化成皮膜を完全に除去で
きるため、溶接強度を向上し、使用寿命を延長したタン
タルチップコンデンサを実現できる。[Effects of the invention and invention] As explained above, according to the method for manufacturing a tantalum chip capacitor of the present invention, the chemical conversion film can be completely removed by irradiating the welded portion of the tantalum wire with laser light. , it is possible to realize tantalum chip capacitors with improved welding strength and extended service life.
第１図（Ａ＞（Ｂ）はそれぞれ本発明の一実施例を示す
側面図及び斜視図、第２図は同実施例の作用を確認する
ための導通試験を示す側面図、第３図（Ａ）〜（Ｃ）は
それぞれコンデンサ素子とリードフレームとの溶接を説
明する図で、（Ａ＞は平面図、（Ｂ）（Ｃ）は斜視図で
おる。
１・・・コンデンサ素子、２・・・アルミニウムベルト
、３・・・タンタル線、４・・・リードフレームの陽極
リード、５・・・リードフレームの陰極リード、６・・
・光ファイバー、７・・・単レンズ、８・・・ガス吹出
し口。Fig. 1 (A>(B) is a side view and perspective view showing an embodiment of the present invention, Fig. 2 is a side view showing a continuity test to confirm the operation of the embodiment, and Fig. 3 ( A) to (C) are diagrams each explaining welding between a capacitor element and a lead frame, where (A> is a plan view and (B) and (C) are perspective views. 1... Capacitor element, 2. ... Aluminum belt, 3... Tantalum wire, 4... Anode lead of lead frame, 5... Cathode lead of lead frame, 6...
・Optical fiber, 7...Single lens, 8...Gas outlet.
Claims (2)
皮膜を形成してこれを陽極体とし、この陽極体と半導体
層を介し導体にて陰極面を形成してコンデンサ素子を構
成すると共に、半田メッキを施したリードフレームを形
成し、コンデンサ素子の陽極リードであるタンタル線を
リードフレームの陽極リードに溶接し、コンデンサ素子
の陰極面をリードフレームの陰極リードに導電接着剤を
介して接続した後、以上の工程により構成された単体を
外装樹脂にてモールド成形することによりタンタルチッ
プコンデンサを製造する方法において、前記コンデンサ
素子の陽極リードであるタンタル線をリードフレームに
溶接する前に、タンタル線表面の化成皮膜を、レーザ光
を照射して除去し、その後にこれをリードフレームに溶
接することを特徴とするタンタルチップコンデンサの製
造方法。(1) A chemical conversion film is formed on a sintered body made by sintering tantalum metal powder, this is used as an anode body, and a cathode surface is formed with a conductor via this anode body and a semiconductor layer to construct a capacitor element. At the same time, a solder-plated lead frame is formed, the tantalum wire that is the anode lead of the capacitor element is welded to the anode lead of the lead frame, and the cathode surface of the capacitor element is connected to the cathode lead of the lead frame using a conductive adhesive. In the method of manufacturing a tantalum chip capacitor by molding the single unit constructed by the above steps with an exterior resin, before welding the tantalum wire, which is the anode lead of the capacitor element, to the lead frame. A method for manufacturing a tantalum chip capacitor, which comprises removing a chemical conversion film on the surface of a tantalum wire by irradiating it with a laser beam, and then welding it to a lead frame.
導光した後レンズを用いて集光したレーザ光を、レンズ
の焦点付近に配置したタンタル線に照射するものとされ
た特許請求の範囲第１項記載のタンタルチップコンデン
サの製造方法。(2) The scope of the claims in which the laser light is irradiated by guiding the light from a laser device through an optical fiber, condensing it using a lens, and irradiating the tantalum wire placed near the focal point of the lens. 2. A method for manufacturing a tantalum chip capacitor according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5613986A JPS62213109A (en) | 1986-03-13 | 1986-03-13 | Manufacture of tantalum chip capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5613986A JPS62213109A (en) | 1986-03-13 | 1986-03-13 | Manufacture of tantalum chip capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62213109A true JPS62213109A (en) | 1987-09-19 |
Family
ID=13018742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5613986A Pending JPS62213109A (en) | 1986-03-13 | 1986-03-13 | Manufacture of tantalum chip capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62213109A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004228439A (en) * | 2003-01-24 | 2004-08-12 | Matsushita Electric Ind Co Ltd | Method for manufacturing solid electrolytic capacitor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56169318A (en) * | 1980-04-25 | 1981-12-26 | Sprague Electric Co | Solid tantalum condenser with clean riser and method of producing same |
-
1986
- 1986-03-13 JP JP5613986A patent/JPS62213109A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56169318A (en) * | 1980-04-25 | 1981-12-26 | Sprague Electric Co | Solid tantalum condenser with clean riser and method of producing same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004228439A (en) * | 2003-01-24 | 2004-08-12 | Matsushita Electric Ind Co Ltd | Method for manufacturing solid electrolytic capacitor |
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