JPS62211953A - Bipolar transistor - Google Patents
Bipolar transistorInfo
- Publication number
- JPS62211953A JPS62211953A JP5567086A JP5567086A JPS62211953A JP S62211953 A JPS62211953 A JP S62211953A JP 5567086 A JP5567086 A JP 5567086A JP 5567086 A JP5567086 A JP 5567086A JP S62211953 A JPS62211953 A JP S62211953A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- base
- single crystal
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims description 8
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract description 11
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract description 11
- 230000003321 amplification Effects 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 6
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野〕
本発明はバイポーラトランジスタに関し、特に屯結晶半
導体のみを用いたｎｐｒＩ型バイポーラ１〜ランジスタ
の構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to bipolar transistors, and more particularly to the structure of nprI type bipolar transistors 1 to 1 transistors using only crystalline semiconductors.
シリコン羊結晶を用いるｎｐｎ型バイポーラトランジス
タは、電流駆動能力が大きいなめ、超高速動作の集積回
路の基本素子として重要である。NPN-type bipolar transistors using silicon crystals have a large current driving capability and are therefore important as basic elements of integrated circuits operating at ultra-high speeds.
ｎｐｎ型バイポーラトランジスタを高速化するにはベー
ス抵抗の低減が重要となる。In order to increase the speed of npn type bipolar transistors, it is important to reduce the base resistance.
〔発明が解決しようとする問題点］１
ベース抵抗を下げるためには、例えばベース領域をｐ型
不純物濃度を高めることが考えられる。[Problems to be Solved by the Invention] 1 In order to lower the base resistance, it is conceivable to increase the p-type impurity concentration in the base region, for example.
しかし、この時は同時にベース電流か増大するため、電
流増幅率が低下しかえって低速化する。However, at this time, the base current increases at the same time, so the current amplification factor decreases and the speed slows down.
このベース電流増大は、ベースからエミ・・７りへ流れ
る正孔電流増大によるものである。したがって、エミッ
タとベースの接合部にエミッタからの電子は自由に注入
されるが、ベースからの正孔は閉止する機能をもつ領域
を形成すれば、ベース抵抗を丁げながらしかも電流増幅
率を低下さぜないｎｐｎｌ〜ランジスタが実現可能とな
る。This increase in base current is due to an increase in hole current flowing from the base to the emitter. Therefore, electrons from the emitter can be freely injected into the emitter-base junction, but holes from the base can be blocked by forming a region that reduces the base resistance and reduces the current amplification factor. This makes it possible to realize npnl transistors that do not cause any damage.
［１発明の目的〕
本発明の目的は、ベース領域の不純物濃度が高くても電
流増幅率の大きなバイポーラ１ヘランジスタを提供する
ことにある。[1.Object of the Invention] An object of the present invention is to provide a bipolar 1-herald transistor with a large current amplification factor even if the impurity concentration in the base region is high.
１、発明の名称 本発明のバイポーラトランジスタは、コレクタ。1. Name of the invention The bipolar transistor of the present invention has a collector.
ベース、エミッタの各領域にｍ結晶半導体をもちいるバ
イポーラ１〜ランジスタであって、ベース。The base is a bipolar transistor that uses an m-crystalline semiconductor in each region of the base and emitter.
エミッタ界面に厚さ５〜２０人の単結晶絶縁膜を設けた
ものである。A single crystal insulating film with a thickness of 5 to 20 layers is provided at the emitter interface.
ｌ１応発明の作用・原理〕
本発明によるバイポーラ１〜ランジスタに設置さ′れた
単結晶絶縁膜中を電子は透過できるが正孔は透過できな
い。一般に正孔は電子に較べ有効質量が大きいため前記
絶縁膜が５Å以上の厚さで存在すると透過できなくなる
。一方電子は２０人程度の厚さまで透過可能である。こ
のため５〜２０人の単結晶絶縁膜をエミッタとベース界
面に設置すれば、ベースからエミッタに流れ込む正孔電
流は大幅に低減できる。11 Operation and Principle of the Invention] Electrons can pass through the single crystal insulating film provided in the bipolar transistor 1 to the transistor according to the present invention, but holes cannot. In general, holes have a larger effective mass than electrons, so if the insulating film has a thickness of 5 Å or more, they cannot pass through. On the other hand, electrons can penetrate up to a thickness of about 20 people. Therefore, if a single crystal insulating film of 5 to 20 layers is installed at the interface between the emitter and the base, the hole current flowing from the base to the emitter can be significantly reduced.
以下、本発明の実施例について図面を参照して詳細に説
明する。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図は本発明の一実施例の断面図である。図中１はｎ
型Ｓｉ基板でコレクタとして働き、８は電流とりだし川
のコレクタ電極である。２はｎ型Ｓｉからなるベース領
域、３は拡散により形成したベース電極とりたしのため
のｎ型Ｓｉ領域であり、４はベース電極である７９は二
酸化硅素膜である。FIG. 1 is a sectional view of an embodiment of the present invention. 1 in the figure is n
The type Si substrate acts as a collector, and 8 is the collector electrode from which the current is taken out. 2 is a base region made of n-type Si, 3 is an n-type Si region formed by diffusion for removing the base electrode, 4 is the base electrode, and 79 is a silicon dioxide film.
ベース領域２に接して、単結晶絶縁膜としてのフッ化カ
ルシウム膜５が設置されている。フッ化カルシウム膜５
は、分子線エピタキシャル法で成長させ、厚さ１０人に
設定されている。そしてこの北に、連続してｎ型Ｓｉか
らなるエミッタ領域６およびエミッタ電極７が形成され
ている。A calcium fluoride film 5 as a single crystal insulating film is provided in contact with the base region 2 . Calcium fluoride film 5
is grown by molecular beam epitaxial method, and the thickness is set to 10. To the north of this, an emitter region 6 and an emitter electrode 7 made of n-type Si are continuously formed.
フッ化カルシウムとシリコンの格子常数は０．６％しか
違わないため、ｎ型Ｓｉからなるベース領域２」二のフ
ッ化カルシウム膜５は単結晶で成長し、フッ化カルシウ
ム膜５」二のｎ型Ｓｉも単結晶で成長する。Since the lattice constants of calcium fluoride and silicon differ by only 0.6%, the calcium fluoride film 5 in the base region 2'2 made of n-type Si grows as a single crystal, and the calcium fluoride film 5'2'n Type Si also grows as a single crystal.
このように構成された本実施例において、ベース領域３
のｐ型不純物濃度を５ Ｘ １．０ ＋９ｃＩｎ−３、
エミッタ領域６の［１型不純物濃度を３×１−０１８Ｃ
ＴＩｌづとしたとき、電流増幅率は１０００と極めて太
きな値が得られた。この結果ベース抵抗は従来値に較べ
］／” ］ Ｏ以下に低減することか可能となった。In this embodiment configured in this way, the base region 3
The p-type impurity concentration is 5 x 1.0 +9cIn-3,
Emitter region 6 [type 1 impurity concentration is 3×1-018C]
When TI1 was set, the current amplification factor had an extremely large value of 1000. As a result, it has become possible to reduce the base resistance to below \"]O compared to the conventional value.
また上記実施例では、半導体単結晶としてＳｉを用いた
場合について説明したが、その他の半導体、例えばＧｅ
、ＳｉＣ，ＧａＡｓ、 ＩｎＰ、 ＩｎＡｓ、ＧａＳｂ
、 ＴｎＳｂ等の■＝Ｖ族化合物半導体でも全く同様に
用いることができる。更に半導体として混晶たとえば、
５ｉ−Ｇｅ、 Ａｅ ＧａＡｓ 、 ＴｎＧａＡｓ 、
ＩｎＧａＰ等を用いることももちろん可能である。全
体が同一種類の半導体である必要もない。例えば第１図
における１がｎ型ＧａＡｓ、２がｎ型ＧａＡｓ、６がｎ
型Ａｆｆ ＧａＡｓであってもよい。Further, in the above embodiments, the case where Si was used as the semiconductor single crystal was explained, but other semiconductors, such as Ge, etc.
, SiC, GaAs, InP, InAs, GaSb
, TnSb, etc., can also be used in exactly the same way. Furthermore, mixed crystals as semiconductors, for example,
5i-Ge, AeGaAs, TnGaAs,
Of course, it is also possible to use InGaP or the like. There is no need for the entire semiconductor to be of the same type. For example, in FIG. 1, 1 is n-type GaAs, 2 is n-type GaAs, and 6 is n-type GaAs.
It may also be of type Aff GaAs.
すなわちヘテロバイポーラトランジスタにも適用可能で
ある。In other words, it is also applicable to hetero bipolar transistors.
また単結晶絶縁膜としては、フッ化カルシウムの他、フ
ッ化バリウム、フッ化ストロンチウムおよびこれらの混
晶か適当である。単結晶絶縁膜の厚さは十分薄いので半
導体との格子不整合として１０％程度の存在までが許容
される。In addition to calcium fluoride, barium fluoride, strontium fluoride, and mixed crystals thereof are suitable for the single crystal insulating film. Since the thickness of the single crystal insulating film is sufficiently thin, a lattice mismatch of about 10% with the semiconductor is allowed.
一５＝
以上説明したように本発明は、エミッタ・ベース界面に
厚さ５〜２０人の単結晶絶縁膜を設けることにより、ベ
ース領域の不純ｌｌｌ７１濃度が高くても電流増幅率の
大きなバイポーラ１ヘランジスタが得られる。15 = As explained above, the present invention provides a bipolar 1, which has a large current amplification factor even if the impurity ll71 concentration in the base region is high, by providing a single crystal insulating film with a thickness of 5 to 20 at the emitter-base interface. Helangista is obtained.
第１図は本発明の一実施例の断面図である。
１・・ｎ型Ｓｉ基板、２・・・ベース領域、３・・・ｎ
型Ｓｉ領域、４・・ベース電極、５・・フッ化カルシウ
ム膜。
６・・・エミッタ領域、７・・エミッタ電極、８・・・
コレクタ電極、９・・・二酸化硅素膜。FIG. 1 is a sectional view of an embodiment of the present invention. 1...n-type Si substrate, 2...base region, 3...n
Type Si region, 4. Base electrode, 5. Calcium fluoride film. 6... Emitter region, 7... Emitter electrode, 8...
Collector electrode, 9... silicon dioxide film.
Claims (1)
もちいるバイポーラトランジスタにおいて、ベース・エ
ミッタ界面に厚さ５〜２０Åの単結晶絶縁膜を設けたこ
とを特徴とするバイポーラトランジスタ。1. A bipolar transistor using a single crystal semiconductor in each of the collector, base, and emitter regions, characterized in that a single crystal insulating film with a thickness of 5 to 20 Å is provided at the base-emitter interface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5567086A JPS62211953A (en) | 1986-03-12 | 1986-03-12 | Bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5567086A JPS62211953A (en) | 1986-03-12 | 1986-03-12 | Bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62211953A true JPS62211953A (en) | 1987-09-17 |
Family
ID=13005298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5567086A Pending JPS62211953A (en) | 1986-03-12 | 1986-03-12 | Bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62211953A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02265246A (en) * | 1989-04-06 | 1990-10-30 | Nec Corp | Bipolar transistor |
| KR100700914B1 (en) | 2006-02-21 | 2007-03-28 | 한국전자통신연구원 | Bipolar Phototransistor and Fabrication Process Method Thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58168275A (en) * | 1982-03-29 | 1983-10-04 | Fujitsu Ltd | Semiconductor device |
| JPS6052055A (en) * | 1983-08-31 | 1985-03-23 | Nec Corp | Semiconductor device |
-
1986
- 1986-03-12 JP JP5567086A patent/JPS62211953A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58168275A (en) * | 1982-03-29 | 1983-10-04 | Fujitsu Ltd | Semiconductor device |
| JPS6052055A (en) * | 1983-08-31 | 1985-03-23 | Nec Corp | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02265246A (en) * | 1989-04-06 | 1990-10-30 | Nec Corp | Bipolar transistor |
| KR100700914B1 (en) | 2006-02-21 | 2007-03-28 | 한국전자통신연구원 | Bipolar Phototransistor and Fabrication Process Method Thereof |
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