JPS62211920A - Apparatus for supplying resist liquid - Google Patents
Apparatus for supplying resist liquidInfo
- Publication number
- JPS62211920A JPS62211920A JP5431286A JP5431286A JPS62211920A JP S62211920 A JPS62211920 A JP S62211920A JP 5431286 A JP5431286 A JP 5431286A JP 5431286 A JP5431286 A JP 5431286A JP S62211920 A JPS62211920 A JP S62211920A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- resist liquid
- bubbles
- liquid
- filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000007599 discharging Methods 0.000 claims 1
- 230000005484 gravity Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000010992 reflux Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000011085 pressure filtration Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Landscapes
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
(産業上の利用分野)
本発明は、半導体装置の製造において半導体つ工−ハ上
にフォトレジスト液を塗布するために用いられるレジス
ト液供給装置に関する。Detailed Description of the Invention [Object of the Invention] (Industrial Application Field) The present invention relates to a resist solution supply device used for applying a photoresist solution onto a semiconductor tool in the manufacture of semiconductor devices. .
(従来の技術)
半導体装置の製造において重要な工程であるフォ1へリ
ソグラフィ工程においては半導体ウェーハ上にフォトレ
ジスト液を塗布づることが行なわれる。このレジスト塗
布においては、基体上に均一な膜厚で塗布するだけでな
く、半導体ウェーへ十に塗布された膜中に気泡が含まれ
ていないことが必要とされる。すなわち、レジスト液に
気泡を含んだままで半導体ウェーハ上にレジメ1へ膜を
塗布すると、残留した気泡がレジスト膜内均一な塗布の
妨げとなるたりでなく、気泡がレジスト膜内に残留し、
フォトリソグラフィ処理の歩留を低下させることもある
。(Prior Art) In a photolithography process, which is an important process in the manufacture of semiconductor devices, a photoresist solution is applied onto a semiconductor wafer. In this resist coating, it is necessary not only to coat the substrate with a uniform film thickness, but also to ensure that the film coated on the semiconductor wafer does not contain any air bubbles. That is, if a film is applied to Regime 1 on a semiconductor wafer while the resist solution contains air bubbles, the remaining air bubbles will not interfere with uniform application within the resist film, but the air bubbles will remain within the resist film.
It may also reduce the yield of photolithography processing.
しかるに、一般に、レジスト液の製造過程には、加圧ろ
過工程等を含んでおり、空気や窒素がレジスト液中に溶
は込みやすく、更には、レジメ1〜液は粘度が高く、そ
の取り扱い中に周囲の気体を取り込み易いという特性が
あり、そのため、気泡を含み易い。However, in general, the manufacturing process of resist solution includes a pressure filtration process, etc., and air and nitrogen easily dissolve into the resist solution.Furthermore, the viscosity of the solutions from Regime 1 to 1 is high, and it is difficult to handle them. has the property of easily taking in surrounding gas, and therefore tends to contain bubbles.
ここで、第2図に従来のレジスト液供給装置を示す。第
2図において、レジスト液容器1中のレジスト液2は供
給路3からポンプ4により吸引された後に吐出口ノズル
5から半導体ウェーへ〇上に供給されるようになってい
る。また、ウェーハ6はモータ7により回転される回転
台上に固定され、一方、供給路3の途中には単にレジス
ト液2中の異物を除去Jるだりの異物除去用フィルタ8
が設けられている。なお、レジスト液容器1には排気管
9が設りられている。Here, FIG. 2 shows a conventional resist liquid supply device. In FIG. 2, the resist liquid 2 in the resist liquid container 1 is sucked from a supply path 3 by a pump 4, and then supplied from a discharge nozzle 5 to the semiconductor wafer in an upward direction. Further, the wafer 6 is fixed on a rotary table rotated by a motor 7, and on the other hand, a foreign matter removal filter 8 is provided in the middle of the supply path 3 for simply removing foreign matter from the resist solution 2.
is provided. Note that the resist liquid container 1 is provided with an exhaust pipe 9.
しかしながら、このような従来装置を用いるどぎには、
レジスト液2中の気泡が何ら除去されないため、塗布む
らを無くして均一な膜厚のレジストSを形成覆ることが
極めて困難である。However, when using such conventional equipment,
Since the bubbles in the resist liquid 2 are not removed at all, it is extremely difficult to eliminate uneven coating and form and cover the resist S with a uniform film thickness.
そこで、レジスト液2中の気泡を除去する機能を有する
レジスト液供給装置が既に本出願人にJ:り提案されて
いる(特願昭60−286469号)第3図に、この既
提案のレジスト液供給装置を示す。この装置は、前出の
第2図に示した装置の異物除去用フィルタ8に替えて脱
泡用フィルタ10を備えている。Therefore, a resist liquid supply device having a function of removing air bubbles in the resist liquid 2 has already been proposed by the applicant (Japanese Patent Application No. 60-286469). The liquid supply device is shown. This device is equipped with a defoaming filter 10 in place of the foreign matter removal filter 8 of the device shown in FIG. 2 above.
脱泡用フィルタ10内にはフィルタ月11が設置ノられ
、気泡を含まないために比重の大きなレジスト液2は下
層部に沈みこの脱泡用フィルタ10を通過するが、気泡
を含むために比重の小ざなレジスト液2は土層部にたま
るため脱泡用フィルタ10を通過できずに還流路12に
よりレジスト液容器1に再び戻されるように4丁ってい
る。41お、第3図中、符号13.1/lはともに流量
調整弁であり、それぞれ滴IZ流量、還流流量を制御J
”る。A filter 11 is installed in the defoaming filter 10, and the resist liquid 2, which has a high specific gravity because it does not contain air bubbles, sinks to the lower layer and passes through this defoaming filter 10, but because it contains air bubbles, the resist liquid 2 has a high specific gravity. There are four resist liquids 2 so that small portions of the resist liquid 2 accumulate in the soil layer, cannot pass through the defoaming filter 10, and are returned to the resist liquid container 1 through the reflux path 12. 41 In Fig. 3, numerals 13.1/l are both flow rate adjustment valves, which control the droplet IZ flow rate and the reflux flow rate J.
”ru.
しかしながら、このJ:うな装置にあっても、比較的大
きな気泡は除去できるものの、微小な気泡については脱
泡用−ノイルタ10を通過してしj:うために除去でき
ず、従って、塗布むらを十分に防止しτ極めて均一な膜
厚のレジメ1−膜を形成させることは困難である。However, although this device can remove relatively large air bubbles, it cannot remove minute air bubbles because they pass through the defoaming filter 10, resulting in uneven coating. It is difficult to sufficiently prevent τ and form a Regime 1 film with an extremely uniform film thickness.
(発明が解決しようとする問題点)
このにうに従来提案されているレジスト液供給装dは微
小な気泡の除去ができないため、レジメ1〜伶布厚の特
性が良好でない。(Problems to be Solved by the Invention) The conventionally proposed resist liquid supply device d is unable to remove minute air bubbles, and therefore does not have good characteristics for Regimes 1 to 2 fabric thickness.
本発明は上記事情を考慮してなされたもので、塗布むら
を十分に防止して極めて均一な膜厚のレジスト膜を形成
させることのできるレジスト液供給装置を提供すること
を目的とする。The present invention has been made in consideration of the above circumstances, and it is an object of the present invention to provide a resist liquid supply device that can sufficiently prevent uneven coating and form a resist film with an extremely uniform thickness.
(問題点を解決するための手段)
本発明によるレジスト液供給装置は、レジスト液を収容
づるレジスト液容器からポンプでレジス1〜液を吸引し
てウェーハ上に滴下させる際にレジスト液中の微小な気
泡をも減圧作用により大ぎくする絞り弁と、脱泡用フィ
ルタを通過させて微小気泡を除去するJzうにしたもの
である。(Means for Solving the Problems) The resist liquid supply device according to the present invention uses a pump to suck the resist liquid from a resist liquid container containing the resist liquid and drop it onto a wafer. It is equipped with a throttle valve that makes even small air bubbles larger by reducing the pressure, and a filter that removes micro air bubbles by passing them through a defoaming filter.
(作 用)
本発明にJ3いて使用される絞り弁はそこを通過するレ
ジスト液に対し急激な圧力変化を与える。(Function) The throttle valve used in J3 of the present invention applies a rapid pressure change to the resist liquid passing through it.
これによってレジスト液中に溶解している気体成分は大
きな気泡どなり、脱泡用フィルタによって除かれるため
気泡のないレジス1〜液のみが半導体ウェーハに対して
供給される。As a result, the gas component dissolved in the resist liquid becomes large bubbles and is removed by the defoaming filter, so that only the resist liquid without bubbles is supplied to the semiconductor wafer.
(実施例) 以下、本発明を図示する実施例に基づいて説明する。(Example) The present invention will be described below based on illustrated embodiments.
第1図にレジス1へ液供給装置の一実施例を示す。FIG. 1 shows an embodiment of a liquid supply device to the register 1.
なお、図中、従来装置と同一もしくは近似する部分は同
一符号を付してその説明を簡略化もしくは省略する。In the drawings, parts that are the same or similar to those of the conventional device are given the same reference numerals, and the explanation thereof will be simplified or omitted.
この装置においては、脱泡用フィルタ10とポンプ4と
の間に絞り弁20を設けている。脱泡用フィルタ10に
向うレジスト液2は、この絞り弁20を通過した直後に
、急激に一時的な減圧状態となり、そのため、レジスト
液2中の微小な気泡が膨張する。このような状態でレジ
メl〜液は脱泡用フィルタ10に供給されるが、この脱
泡用フィルタ10は前述したように、レジスト液2が気
泡を含む場合と含まない場合とでその比重が異なること
を利用して気泡を含まないレジメ1〜液2のみを通過さ
ける装置であるため、減圧により発生し、膨張した気泡
を含むレジスト液は還流路12に流入し、回収弁1/′
lを介して流量調整されて容器1に回収される。一方、
気泡を含まないレジスト液はフィルタ材11にj;っで
濾過され、流出弁13を介して半導体ウェーへ〇上に滴
下される。半導体ウェーハ6はスピンドル七−夕7によ
って高速回転されるため、半導体つ■−ハロ上には均一
なフA1〜レジスト膜が形成される。このように、この
実施例によれば、気泡が溶存しノこレジストを急激に減
圧Jることにより充分に脱泡し、そののち、半導体ウェ
ーハ上に滴下して塗布を行なうので塗イ0膜内に残留気
泡を右Jることがない。特に塗布した膜をベーキング等
J−る工程を後に有する場合には、効果は人さい。In this device, a throttle valve 20 is provided between the defoaming filter 10 and the pump 4. Immediately after the resist liquid 2 heading toward the defoaming filter 10 passes through the throttle valve 20, the pressure is suddenly temporarily reduced, and as a result, minute bubbles in the resist liquid 2 expand. In this state, the resist liquid 2 is supplied to the defoaming filter 10, but as described above, the specific gravity of the resist liquid 2 varies depending on whether it contains air bubbles or not. Since this is a device that uses different characteristics to avoid passing only Regime 1 to Liquid 2 that do not contain air bubbles, the resist liquid that contains air bubbles that are generated and expanded due to reduced pressure flows into the reflux path 12 and passes through the recovery valve 1/'.
The flow rate is adjusted through 1 and collected in the container 1. on the other hand,
The resist solution containing no air bubbles is filtered by the filter material 11 and dripped onto the semiconductor wafer via the outflow valve 13. Since the semiconductor wafer 6 is rotated at high speed by the spindle 7, a uniform resist film A1 is formed on the semiconductor wafer 6. As described above, according to this embodiment, the dissolved bubbles are sufficiently degassed by rapidly reducing the pressure of the saw resist, and then the coating is performed by dropping the resist onto the semiconductor wafer, resulting in zero coating. There will be no residual air bubbles inside. Especially when the applied film is subjected to a subsequent process such as baking, the effect is small.
上記実施例の説明では、塗布手段を基体の回転によるス
ピンナとして示したがそれに限られるものではない。ま
た、上記実施例では気泡を含むレジメ[〜液を還流路を
通してレジスト液容器に戻すようにしているが、これを
別の容器に移しかえて真空による強制脱泡等を行なうよ
うにしてもよい。In the description of the above embodiments, the coating means is shown as a spinner that rotates the base, but the present invention is not limited thereto. Furthermore, in the above embodiment, the regime liquid containing air bubbles is returned to the resist liquid container through the reflux path, but it may be transferred to another container and forced defoaming by vacuum, etc. .
例えば他の有機樹脂、無機液体などにも適用で・きるの
は勿論である1゜
〔発明の効果〕
以上の通り本発明によれば、レジメl〜を脱泡用フィル
タに供給する際に絞り弁を通過させることとしており、
液体に含まれた微小気泡が急激な減圧にJこって大きな
気泡どなり、気泡を含む液体が充分に除去されるので、
半導体つ■−ハ上に均一、かつ良質な液体塗イI膜を形
成させることのできるレジスト液供給装置を提供できる
。For example, it is of course applicable to other organic resins, inorganic liquids, etc.1゜[Effects of the Invention] As described above, according to the present invention, when the regimen l~ is supplied to the defoaming filter, it is squeezed. It is supposed to pass through the valve,
The microbubbles contained in the liquid become large bubbles due to the sudden pressure reduction, and the liquid containing the bubbles is sufficiently removed.
It is possible to provide a resist liquid supply device capable of forming a uniform and high quality liquid coating film on a semiconductor substrate.
第1図は本発1111によるレジスト液供給装置の構成
を示す正面図、第2.3図はそれぞれ従来のレジスト液
供給装置を示J正面図である。
1・・・レジスト液容器、2・・・レジメ1〜液、3・
・・供給路、4・・・ポンプ、5・・・吐出し1.6・
・・つ■−ハ、7・・・スピンモータ、10・・・気泡
除去用フィルタ部、11・・・フィルタ材、12・・・
還流路、13.1/I・・・流用調整弁、20・・・絞
り弁。
出願人代理人 佐 藤 −雄
= 8 −
も l 図
色 2 肥
肥 3 図FIG. 1 is a front view showing the configuration of a resist liquid supply device according to the present invention 1111, and FIGS. 2 and 3 are front views showing a conventional resist liquid supply device. 1... Resist liquid container, 2... Regime 1~liquid, 3...
... Supply path, 4... Pump, 5... Discharge 1.6.
...tsu■-ha, 7... spin motor, 10... filter section for removing air bubbles, 11... filter material, 12...
Reflux path, 13.1/I...flow adjustment valve, 20...throttle valve. Applicant's agent Sato -Yu = 8 - Mo l Figure color 2 Feri 3 Figure
Claims (1)
スト液容器からレジスト液を吸引するとともに吐出口か
ら滴下させて半導体ウェーハ上に供給させるポンプと、
レジスト液中の気泡を除去するよう前記吐出口の手前側
に設けられた脱泡用フィルタと、この脱泡用フィルタに
向うレジスト液中に含まれた微小な気泡を減圧作用によ
り大きくさせる絞り弁と、前記脱泡用フィルタを通過で
きなかった大きな気泡を含むレジスト液を排出する排出
管路とを備えたレジスト液供給装置。 2、排出管路がレジスト液容器に接続された特許請求の
範囲第1項記載のレジスト液供給装置。[Scope of Claims] 1. A resist liquid container that stores a resist liquid, and a pump that sucks the resist liquid from the resist liquid container and causes the resist liquid to drip from a discharge port and supply onto a semiconductor wafer;
A defoaming filter provided in front of the discharge port to remove air bubbles in the resist solution; and a throttle valve that enlarges minute air bubbles contained in the resist solution directed toward the defoaming filter by a depressurizing action. and a discharge pipe for discharging the resist solution containing large bubbles that could not pass through the defoaming filter. 2. The resist liquid supply device according to claim 1, wherein the discharge pipe is connected to the resist liquid container.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5431286A JPS62211920A (en) | 1986-03-12 | 1986-03-12 | Apparatus for supplying resist liquid |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5431286A JPS62211920A (en) | 1986-03-12 | 1986-03-12 | Apparatus for supplying resist liquid |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62211920A true JPS62211920A (en) | 1987-09-17 |
JPH0248137B2 JPH0248137B2 (en) | 1990-10-24 |
Family
ID=12967060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5431286A Granted JPS62211920A (en) | 1986-03-12 | 1986-03-12 | Apparatus for supplying resist liquid |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62211920A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63121436U (en) * | 1987-01-30 | 1988-08-05 | ||
JPH0294517A (en) * | 1988-09-30 | 1990-04-05 | Tokyo Electron Ltd | Applying method of resist liquid |
JPH03114565A (en) * | 1989-09-29 | 1991-05-15 | Hitachi Ltd | Rotary coating applicator and fluid feeder |
JPH08131909A (en) * | 1994-11-04 | 1996-05-28 | Dainippon Screen Mfg Co Ltd | Feeder of treating liquid for substrate-treating device |
KR19990018143A (en) * | 1997-08-26 | 1999-03-15 | 윤종용 | Thinner injection device for semiconductor device manufacturing |
JP2008282907A (en) * | 2007-05-09 | 2008-11-20 | Nec Electronics Corp | Liquid-material feeder and method for supplying liquid material by using it |
US7654414B2 (en) | 2002-02-07 | 2010-02-02 | Pall Corporation | Liquids dispensing systems and methods |
JP2010135535A (en) * | 2008-12-04 | 2010-06-17 | Tokyo Electron Ltd | Processing liquid supply unit |
JP2012152661A (en) * | 2011-01-24 | 2012-08-16 | Seiko Epson Corp | Drawing apparatus |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5528706A (en) * | 1978-08-18 | 1980-02-29 | Senko Ika Kogyo Kk | Bubble removing method |
JPS6061011A (en) * | 1983-09-14 | 1985-04-08 | Hitachi Ltd | Deaeration-defoaming apparatus |
JPS60135064A (en) * | 1983-11-29 | 1985-07-18 | ガムブロ ルンデイア アクチーボラグ | Degassing apparatus of liquid |
-
1986
- 1986-03-12 JP JP5431286A patent/JPS62211920A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5528706A (en) * | 1978-08-18 | 1980-02-29 | Senko Ika Kogyo Kk | Bubble removing method |
JPS6061011A (en) * | 1983-09-14 | 1985-04-08 | Hitachi Ltd | Deaeration-defoaming apparatus |
JPS60135064A (en) * | 1983-11-29 | 1985-07-18 | ガムブロ ルンデイア アクチーボラグ | Degassing apparatus of liquid |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63121436U (en) * | 1987-01-30 | 1988-08-05 | ||
JPH0294517A (en) * | 1988-09-30 | 1990-04-05 | Tokyo Electron Ltd | Applying method of resist liquid |
JPH03114565A (en) * | 1989-09-29 | 1991-05-15 | Hitachi Ltd | Rotary coating applicator and fluid feeder |
JPH08131909A (en) * | 1994-11-04 | 1996-05-28 | Dainippon Screen Mfg Co Ltd | Feeder of treating liquid for substrate-treating device |
KR19990018143A (en) * | 1997-08-26 | 1999-03-15 | 윤종용 | Thinner injection device for semiconductor device manufacturing |
US7654414B2 (en) | 2002-02-07 | 2010-02-02 | Pall Corporation | Liquids dispensing systems and methods |
JP2008282907A (en) * | 2007-05-09 | 2008-11-20 | Nec Electronics Corp | Liquid-material feeder and method for supplying liquid material by using it |
JP2010135535A (en) * | 2008-12-04 | 2010-06-17 | Tokyo Electron Ltd | Processing liquid supply unit |
KR101487364B1 (en) * | 2008-12-04 | 2015-01-29 | 도쿄엘렉트론가부시키가이샤 | Processing liquid supplying device |
JP2012152661A (en) * | 2011-01-24 | 2012-08-16 | Seiko Epson Corp | Drawing apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPH0248137B2 (en) | 1990-10-24 |
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