JPS62206891A - Magnetoresistance effect element - Google Patents
Magnetoresistance effect elementInfo
- Publication number
- JPS62206891A JPS62206891A JP61049750A JP4975086A JPS62206891A JP S62206891 A JPS62206891 A JP S62206891A JP 61049750 A JP61049750 A JP 61049750A JP 4975086 A JP4975086 A JP 4975086A JP S62206891 A JPS62206891 A JP S62206891A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetoresistive element
- magnetoresistive
- ferrite
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 20
- 230000005291 magnetic effect Effects 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 230000005294 ferromagnetic effect Effects 0.000 claims description 3
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 21
- 239000010408 film Substances 0.000 abstract description 17
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract description 6
- 229910018605 Ni—Zn Inorganic materials 0.000 abstract description 6
- 229910045601 alloy Inorganic materials 0.000 abstract description 6
- 239000000956 alloy Substances 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- 230000008929 regeneration Effects 0.000 abstract 1
- 238000011069 regeneration method Methods 0.000 abstract 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、磁気センサとして用いられる磁気抵抗効果素
子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetoresistive element used as a magnetic sensor.
Ｆｅ−ＮｉやＮｉ−Ｃｏ合金等の強磁性体の有する磁気
抵抗効果を利用した磁気−電気変換素子は、信号磁界に
対する再生感度が高い素子として位置検出器等に使用さ
れている。このような素子は、一般に第４図に示すよう
なストライブ状の薄膜パターン１２を基板１１上に形成
して作製される。すなわち、薄膜パターン１２の長手方
向に電流■を流し、これと直角方向に外部磁場Ｈを印加
して、その磁場の大きさに応じた磁気抵抗の変化を電圧
又は電流の変化として外部に取り出し、これを出力信号
としている。Magneto-electric conversion elements that utilize the magnetoresistive effect of ferromagnetic materials such as Fe-Ni and Ni-Co alloys are used in position detectors and the like as elements with high reproduction sensitivity to signal magnetic fields. Such an element is generally manufactured by forming a striped thin film pattern 12 on a substrate 11 as shown in FIG. That is, a current (2) is passed in the longitudinal direction of the thin film pattern 12, an external magnetic field (H) is applied in a direction perpendicular to this, and a change in magnetic resistance corresponding to the magnitude of the magnetic field is extracted to the outside as a change in voltage or current. This is used as the output signal.
近年、検出器の高分解能化が進むなかで、磁気抵抗効果
素子のパターン幅も狭くなってきた。ところが、パター
ン幅が狭くなると次のような問題が生じる。In recent years, as the resolution of detectors has increased, the pattern width of magnetoresistive elements has also become narrower. However, when the pattern width becomes narrower, the following problems occur.
すなわち、有限の長さをもつ磁性体を長手方向に磁化す
ると、その両端部に磁極が生じ、磁性体内の磁化方向と
逆方向の磁場を生じる。この磁場を反磁場Ｈ−という、
この大きさは、パターン幅をｄ、膜厚をｔ、中心で生ず
る磁化Ｍとすると、Ｈ４１ＩＩ＋４πＭｔ／ｄ
で表される。この反磁場は、外部からの磁場Ｈ，。That is, when a magnetic body with a finite length is magnetized in the longitudinal direction, magnetic poles are generated at both ends of the magnetic body, generating a magnetic field in the opposite direction to the magnetization direction within the magnetic body. This magnetic field is called the demagnetizing field H-.
This size is expressed as H41II+4πMt/d, where d is the pattern width, t is the film thickness, and M is the magnetization generated at the center. This demagnetizing field is an external magnetic field H,.
に対して減磁作用を及ぼす。したがって、有効磁場Ｈ１
１，は、
）（４ｇ ｇ −）１６ Ｘ −Ｈ４
となる。この式かられかるように、パターン幅が狭くな
るとＨ４が増し、Ｈｅ ｆ ｆが減少するため、効率が
悪くなる。すなわち、磁気抵抗効果は第５図に示すよう
にパターン幅が狭くなるに従って小さくなる。exerts a demagnetizing effect on Therefore, the effective magnetic field H1
1 becomes )(4g g −)16 X −H4. As can be seen from this equation, as the pattern width becomes narrower, H4 increases and He f f decreases, resulting in poor efficiency. That is, as shown in FIG. 5, the magnetoresistive effect becomes smaller as the pattern width becomes narrower.
このような欠点を小さくする方法として、特開昭５６−
９０５７７号公報記載のものがある。この方法は、第６
図に示すようにストライブ状磁気抵抗効果素子２１の幅
方向すなわち検出磁界方向の片側又は画側に、有限長の
ギャップＧを隔てて、同一平面上に薄膜状高透磁率磁性
体２２＾、２２Ｂを磁気抵抗効果素子２１と隣接並置す
る構成である。すなわち、隣接並置した薄膜状高透磁率
磁性体２２＾、２２Ｂによってストライブ状磁気抵抗効
果素子２１に生じる反磁界を小さくし、再生感度を高め
るものである。As a method to reduce such drawbacks, Japanese Patent Application Laid-open No. 1986-
There is one described in 90577 publication. This method is the sixth
As shown in the figure, on one side or image side in the width direction of the striped magnetoresistive element 21, that is, in the direction of the detected magnetic field, a thin film-like high permeability magnetic material 22^ is placed on the same plane with a finite length gap G separated. 22B is arranged adjacent to the magnetoresistive element 21. That is, the demagnetizing field generated in the striped magnetoresistive element 21 by the thin film-like high permeability magnetic bodies 22^ and 22B arranged adjacent to each other is reduced, thereby increasing the reproduction sensitivity.
このような構成の磁気抵抗効果素子においては、ギャッ
プＧが小さいほど効果が出る。すなわち、ギャップＧを
１〜２μｍ以下に設定することが望まルいが、現状の技
術ではきわめて困難である。In the magnetoresistive element having such a configuration, the smaller the gap G, the more effective it is. That is, it is desirable to set the gap G to 1 to 2 μm or less, but this is extremely difficult with the current technology.
したがって従来の方法によっては、磁気抵抗効果素子の
再生感度を現状に比べて大きく向上させることはできな
かった。Therefore, depending on the conventional methods, it has not been possible to significantly improve the reproduction sensitivity of the magnetoresistive element compared to the current situation.
本発明は、上記欠点を解消し、従来より再生感度を大き
く向上させた磁気抵抗効果素子を提供することを目的と
する。SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetoresistive element that eliminates the above-mentioned drawbacks and has greatly improved reproduction sensitivity compared to the prior art.
Ｃ問題点を解決するための手段〕
この目的を達成するため、本発明では、磁気抵抗効果を
有する強磁性材料からなる薄膜により絶縁性基板の主面
上に回路パターンを形成した磁気抵抗効果素子において
、
該磁気抵抗効果素子の回路パターンの幅方向の片側又は
画側に該磁気抵抗効果素子と連続して絶縁性強磁性材料
からなる薄膜を並置したことを特徴とする。Means for Solving Problem C] To achieve this object, the present invention provides a magnetoresistive element in which a circuit pattern is formed on the main surface of an insulating substrate using a thin film made of a ferromagnetic material having a magnetoresistive effect. A thin film made of an insulating ferromagnetic material is disposed continuously with the magnetoresistive element on one side in the width direction or on the image side of the circuit pattern of the magnetoresistive element.
、 以下、本考案を図面に示す実施例に基づいて具体
的に説明する。, Hereinafter, the present invention will be specifically described based on embodiments shown in the drawings.
第１図は本発明の第１の実施例を示す斜視図である０図
において、１はガラス基板、２は絶縁性強磁性材料であ
るＮｔ−Ｚｎフェライト皮膜、３は磁気抵抗効果を有す
るｒｅ−Ｎｉ合金薄膜である。このＰｅ−Ｎｉ合金薄膜
３の画側には、Ｎｉ−Ｚｎフェライト皮膜２が連続して
並置されている。FIG. 1 is a perspective view showing the first embodiment of the present invention. In FIG. -Ni alloy thin film. On the image side of this Pe--Ni alloy thin film 3, a Ni--Zn ferrite film 2 is continuously juxtaposed.
このような構成の磁気抵抗効果素子を製造する工程を第
２図に基づいて説明する。The process of manufacturing a magnetoresistive element having such a configuration will be explained based on FIG. 2.
（ａｌ ガラス基板ｌ上に、高周波スパッタ法を用い
ることにより３００人の厚さにＮｉ−Ｚｎフェライト皮
皮膜を被覆する（第２図（ｍｌ）。(A Ni--Zn ferrite film is coated on a glass substrate l to a thickness of 300 mm by using a high-frequency sputtering method (Fig. 2 (ml).
山） フォトリンにより、Ｎｉ−Ｚｎフェライトｌ上に
幅ｌＯμｍのレジストパターン４を形成する（第２図（
ｂｌ）。A resist pattern 4 with a width of 10 μm is formed on the Ni-Zn ferrite 1 using photorin (see Fig. 2).
bl).
（ｅｌ イオンエツチングにより、レジストパターン
４を形成した部分を残して、Ｎｉ−Ｚｎフェライト皮膜
２の層を除去する（第２図（Ｃ））。(el) The layer of the Ni--Zn ferrite film 2 is removed by ion etching, leaving the portion where the resist pattern 4 is formed (FIG. 2(C)).
（ｄｌ レジスト４を溶剤で除去する（第２図ｆｆ１
）。(dl Remove resist 4 with solvent (Fig. 2 ff1
).
（６１真空蒸着法により、ガラス基板１及びＮｉ −Ｚ
ｎフェライト皮膜２の表面に、Ｆｓ−Ｎｉ合金薄膜３を
５００人の厚さに形成する（第２図（１り）。(Glass substrate 1 and Ni-Z
A Fs-Ni alloy thin film 3 is formed on the surface of the n-ferrite film 2 to a thickness of 500 mm (FIG. 2 (1)).
（ｆ） フォトリンにより、Ｆｅ−Ｎｉ合金薄膜３上
におけるＮｉ−Ｚｎフェライト皮膜２の間の部分にレジ
ストパターン５を形成する（第２図ｆｆ１）。(f) A resist pattern 5 is formed on the Fe--Ni alloy thin film 3 between the Ni--Zn ferrite films 2 using photorin (FIG. 2 ff1).
（ｇ） レジストパターン５を形成した部分を除き、
Ｆｅ−Ｎｉ合金薄Ｍ３を酸により溶解し、除去する（第
２図（ｇｌ）。(g) Except for the part where resist pattern 5 was formed,
The Fe--Ni alloy thin M3 is dissolved with acid and removed (Fig. 2 (gl)).
（Ｎ レジスト５を除去して第２図（幻に示すように、
Ｎｉ−Ｚｎフェライト皮膜２の間にＦｅ−Ｎｉ合金薄膜
３を形成した本発明の磁気抵抗効果素子を得る。(N After removing the resist 5, as shown in Figure 2 (phantom),
A magnetoresistive element of the present invention is obtained in which a Fe--Ni alloy thin film 3 is formed between a Ni--Zn ferrite film 2.
このような工程により、作製した磁気抵抗効果素子につ
いて磁気抵抗効果を、外部磁界３００ｅの条件で調べた
ところ、２．５％の向上結果が得られた。この値はフェ
ライトがない場合の１．５％に比べて大きいことがわか
る。When the magnetoresistive effect of the magnetoresistive element produced through such a process was examined under the condition of an external magnetic field 300e, an improvement of 2.5% was obtained. It can be seen that this value is larger than 1.5% in the case without ferrite.
これは、外部磁場がかかると磁極がフェライトパターン
の画側にできる。したがって、Ｆｅ−Ｎｉバターンの反
磁場Ｈ４は、フェライトの幅をＤとすると、
Ｈ４−４πＭｔ／（Ｄ＋ｄ）
となる。しかもフェライトは絶縁物であるので、磁気抵
抗効果には無関係である。この結果、Ｈｄはフェライト
がないときより小さくなり、有効磁場が増えるため磁気
抵抗効果が大きくなるのである。This is because when an external magnetic field is applied, a magnetic pole is formed on the image side of the ferrite pattern. Therefore, the demagnetizing field H4 of the Fe-Ni pattern becomes H4-4πMt/(D+d), where D is the width of the ferrite. Moreover, since ferrite is an insulator, it has no relation to the magnetoresistive effect. As a result, Hd becomes smaller than when there is no ferrite, and the effective magnetic field increases, so the magnetoresistive effect becomes larger.
この検討結果に基づいて、第３図ｉａｌ〜＋ｄｌに示す
各種の構成からなる磁気抵抗効果素子を作り、同様に磁
気抵抗効果を調べた。第３図＋ａｌは、Ｆｅ−Ｎｉ合金
薄膜３の外側にＮｉ−Ｚｎフェライト皮膜２を並置した
例を示している。第３図山）は、隣接するＦｅ−Ｎｉ合
合金１膜３の間にＮｉ−Ｚｎフェライト皮膜２を充填形
成した例を示している。さらに第３図（Ｃ１は、Ｆｅ−
Ｎｉ合金薄膜３の内側にＮｉ−Ｚｎフェライト皮膜２を
それぞれ形成した例を示している。なお、使用した強磁
性絶縁物は、Ｎｉ−Ｚｎフェライトの他にガーネット、
Ｍｎ −Ｚｎフェライトであり、いずれも高周波スパッ
タ法で膜を形成した。磁気抵抗効果は、第１図に示した
実施例と同様に大きく、いずれも２．５％以上の出力増
加を示した。Based on the results of this study, magnetoresistive elements having various configurations shown in FIG. 3 ial to +dl were fabricated, and the magnetoresistive effect was similarly investigated. FIG. 3+al shows an example in which a Ni--Zn ferrite film 2 is juxtaposed on the outside of a Fe--Ni alloy thin film 3. 3) shows an example in which a Ni--Zn ferrite film 2 is filled and formed between adjacent Fe--Ni alloy 1 films 3. Furthermore, in FIG. 3 (C1 is Fe-
An example is shown in which a Ni--Zn ferrite film 2 is formed on the inside of a Ni alloy thin film 3. In addition to Ni-Zn ferrite, the ferromagnetic insulators used were garnet,
They are Mn-Zn ferrite, and both films were formed by high-frequency sputtering. The magnetoresistive effect was as large as in the example shown in FIG. 1, and both showed an increase in output of 2.5% or more.
なお実施例では強磁性磁気抵抗効果膜としてＦｅ−Ｎｉ
合金だけを示しているが、Ｎｉ−Ｃｏ合金や他の磁気抵
抗効果を示す材料でも同様の効果を期待することができ
る。In the example, Fe-Ni was used as the ferromagnetic magnetoresistive film.
Although only alloys are shown, similar effects can be expected with Ni-Co alloys and other materials exhibiting magnetoresistive effects.
以上に説明したように、本発明においては、磁気抵抗効
果素子のパターンの幅方向の片側又は画側に該磁気抵抗
効果素子と連続して絶縁性絶縁性強磁性材料からなる薄
膜を並置した構成としてい゛る。このような構成にする
ことにより、外部磁界がかかると磁気抵抗効果素子に対
する有効磁場が増加し、これにより、従来より極めて再
生感度の高い磁気抵抗効果素子を簡単な工程で得ること
ができる。As explained above, in the present invention, a thin film made of an insulating ferromagnetic material is juxtaposed continuously with the magnetoresistive element on one side in the width direction or on the image side of the pattern of the magnetoresistive element. I'm standing there. With such a configuration, when an external magnetic field is applied, the effective magnetic field for the magnetoresistive element increases, thereby making it possible to obtain a magnetoresistive element with significantly higher reproduction sensitivity than before with a simple process.
第１図は本発明の実施例を示す磁気抵抗効果素子の斜視
図、第２図は本発明に係る磁気抵抗効果素子を製作する
ための工程の例を示す説明図、第３図は本発明の他の各
種の例を示す断面図、第４図は従来の磁気抵抗効果素子
の斜視図、第５図は磁気抵抗効果に及ぼす外部磁界とパ
ターン幅の影響を表すグラフ、第６図は先に提案された
従来の磁気抵抗効果素子の構成を示す斜視図である。
１ニガラス基板
２：Ｎｉ−Ｚｎフェライト皮膜
３：Ｆｅ−Ｎｉ合金薄膜FIG. 1 is a perspective view of a magnetoresistive element showing an embodiment of the present invention, FIG. 2 is an explanatory diagram showing an example of a process for manufacturing the magnetoresistive element according to the present invention, and FIG. 3 is a perspective view of a magnetoresistive element according to an embodiment of the present invention. 4 is a perspective view of a conventional magnetoresistive effect element, FIG. 5 is a graph showing the influence of external magnetic field and pattern width on the magnetoresistive effect, and FIG. 6 is a graph showing the influence of the external magnetic field and pattern width on the magnetoresistive effect. 1 is a perspective view showing the configuration of a conventional magnetoresistive element proposed in 2003. 1 Glass substrate 2: Ni-Zn ferrite film 3: Fe-Ni alloy thin film
Claims (2)
より絶縁性基板の主面上に回路パターンを形成した磁気
抵抗効果素子において、 該磁気抵抗効果素子の回路パターンの幅方向の片側又は
画側に該磁気抵抗効果素子と連続して絶縁性強磁性材料
からなる薄膜を並置したことを特徴とする磁気抵抗効果
素子。1. In a magnetoresistive element in which a circuit pattern is formed on the main surface of an insulating substrate using a thin film made of a ferromagnetic material having a magnetoresistive effect, the magnetoresistive element is provided with the magnetic field on one side in the width direction or on the image side of the circuit pattern of the magnetoresistive element. 1. A magnetoresistive element characterized in that a thin film made of an insulating ferromagnetic material is disposed in series with a resistive element.
が絶縁性強磁性体薄膜で連結されていることを特徴とす
る特許請求の範囲第１項記載の磁気抵抗効果素子。2. 2. The magnetoresistive element according to claim 1, wherein circuit patterns of adjacent magnetoresistive elements are connected by an insulating ferromagnetic thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61049750A JPS62206891A (en) | 1986-03-06 | 1986-03-06 | Magnetoresistance effect element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61049750A JPS62206891A (en) | 1986-03-06 | 1986-03-06 | Magnetoresistance effect element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62206891A true JPS62206891A (en) | 1987-09-11 |
Family
ID=12839856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61049750A Pending JPS62206891A (en) | 1986-03-06 | 1986-03-06 | Magnetoresistance effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62206891A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01134979A (en) * | 1987-11-20 | 1989-05-26 | Japan Servo Co Ltd | Magnetosensor |
-
1986
- 1986-03-06 JP JP61049750A patent/JPS62206891A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01134979A (en) * | 1987-11-20 | 1989-05-26 | Japan Servo Co Ltd | Magnetosensor |
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