JPH01134979A - Magnetosensor - Google Patents
MagnetosensorInfo
- Publication number
- JPH01134979A JPH01134979A JP62291743A JP29174387A JPH01134979A JP H01134979 A JPH01134979 A JP H01134979A JP 62291743 A JP62291743 A JP 62291743A JP 29174387 A JP29174387 A JP 29174387A JP H01134979 A JPH01134979 A JP H01134979A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic flux
- magnetic sensor
- permanent magnet
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 claims abstract description 76
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract 4
- 230000004907 flux Effects 0.000 abstract description 22
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000006698 induction Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000696 magnetic material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Abstract
Description
【発明の詳細な説明】
(1)発明の目的
[産業上の利用分野]
本発明は移動体の速度又は位置等を検出する磁気エンコ
ーダに使用する磁気センサの構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION (1) Purpose of the Invention [Field of Industrial Application] The present invention relates to the structure of a magnetic sensor used in a magnetic encoder that detects the speed or position of a moving body.
[従来技術]
第3図は従来より実施されている磁気エンコータの概念
を示す図で、(a)構造の概念を、(b)は磁気ドラム
の永久磁石と磁気センサとの相関を示し、(C)は電気
回路の概念を夫々示している。[Prior Art] Fig. 3 is a diagram showing the concept of a conventional magnetic encoder, in which (a) shows the concept of the structure, (b) shows the correlation between the permanent magnet of the magnetic drum and the magnetic sensor, and ( C) each shows the concept of an electric circuit.
図示の磁気エンコーダは回転軸1に固着した磁気ドラム
の外周に永久磁石2のN、Sの磁極が等間隔に交互に着
磁され、永久磁石2と適宜の空隙を介して磁気抵抗素子
4を有する磁気センサ3が対向配設され、前記磁気セン
サの磁気抵抗素子の6抵抗変化を検出することにより磁
気ドラムを固着した回転軸の速度又は位置を検出できる
ものである。磁気ドラムの永久磁石と磁気センサの磁気
抵抗素子との相関関係は(b)図に示すように永久磁石
2の磁極ピッチ2πに対し4個の磁気抵抗素子4の配設
ピッチはπとなるように配設されている。In the illustrated magnetic encoder, N and S magnetic poles of a permanent magnet 2 are alternately magnetized at equal intervals on the outer periphery of a magnetic drum fixed to a rotating shaft 1, and a magnetic resistance element 4 is connected to the permanent magnet 2 through an appropriate gap. A magnetic sensor 3 having a magnetic drum is disposed facing the magnetic sensor, and by detecting six resistance changes of a magnetoresistive element of the magnetic sensor, the speed or position of a rotating shaft to which a magnetic drum is fixed can be detected. The correlation between the permanent magnet of the magnetic drum and the magnetoresistive element of the magnetic sensor is as shown in figure (b), so that the arrangement pitch of the four magnetoresistive elements 4 is π with respect to the magnetic pole pitch of 2π of the permanent magnet 2. It is located in
更に(c)図に示すように4個の磁気抵抗素子4を接続
してブリッジを構成し、該ブリッジの対角点c、dに電
源Eを接続しa、bには回転軸1が回転することにより
永久磁石2の磁極ピッチの。Furthermore, as shown in the figure (c), four magnetoresistive elements 4 are connected to form a bridge, and a power source E is connected to the diagonal points c and d of the bridge, and the rotating shaft 1 is rotated at a and b. By doing so, the magnetic pole pitch of the permanent magnet 2.
2倍の周期を持った正弦波の出力電圧が得られるように
構成されており、この出力電圧を測定する事により回転
軸の位置、又は速度を検出することが出来るものである
。It is configured to obtain a sinusoidal output voltage with twice the period, and by measuring this output voltage, the position or speed of the rotating shaft can be detected.
第2図は第3図に示した磁気エンコーダに従来より実施
されている磁気センサの磁気抵抗素子の配置を示す平面
図(a)と、移動体(回転軸)に装着された永久磁石の
磁極と磁気センサの磁気抵抗素子との磁束の流れの相関
を示す断面図(b)である。Figure 2 is a plan view (a) showing the arrangement of the magnetic resistance elements of the magnetic sensor conventionally implemented in the magnetic encoder shown in Figure 3, and the magnetic poles of the permanent magnet attached to the moving body (rotating shaft). FIG. 4 is a cross-sectional view (b) showing the correlation between the flow of magnetic flux between the magnetic sensor and the magnetoresistive element of the magnetic sensor.
(a)図に示す磁気センサ3はガラス等の絶縁基板3−
1の表面にニッケル、コバルトあるいはそれらの合金の
組成を持つ磁性体の薄膜により複数の(図示の例では4
個)磁気抵抗素子4−1と、該素子の夫々の一方の端子
4−3と、2個の素子の接続点と引出端子を兼ねる導体
部4−2とを形成し、前記4個の磁気抵抗素子4−1は
πのピッチとなるように配設されている。(a) The magnetic sensor 3 shown in the figure has an insulating substrate 3-
A thin film of a magnetic material having a composition of nickel, cobalt, or an alloy thereof is formed on the surface of 1 to form a plurality of (4 in the illustrated example)
) A magnetic resistance element 4-1, one terminal 4-3 of each of the elements, and a conductor part 4-2 which also serves as a connecting point and an extraction terminal for the two elements, and The resistance elements 4-1 are arranged at a pitch of π.
(b)図は(a)図のA−A’線に沿った断面を対向配
設された永久磁石と共に示した断面図で、永久磁石2と
磁気センサ3は空隙Gを介して対向しており、永久磁石
2から発した磁束は破線で示すように其の一部は磁気抵
抗素子4−1の中を略平行に貫通するが、大部分は磁気
抵抗素子の中を通らずに永久磁石に戻る経路を取ってい
る。(b) Figure is a cross-sectional view taken along the line A-A' in Figure (a) together with permanent magnets arranged opposite to each other. As shown by the broken line, part of the magnetic flux emitted from the permanent magnet 2 passes through the magnetoresistive element 4-1 in a substantially parallel manner, but most of it passes through the permanent magnet without passing through the magnetoresistive element. I am taking the route back to .
[発明が解決しようとする問題点]
従来技術による磁気センサにおいては(b)図に示すよ
うに永久磁石から発した磁束は其の一部のみが磁気抵抗
素子の中を貫通し、磁束を検出する作用効果を呈するが
他の大部分は磁気抵抗素子の中を通らないから、磁束の
検出効率が低くなるので検出効率を高めるために永久磁
石と磁気センサとの空隙Gを短くして磁気抵抗素子を貫
通する有効磁束を増加させる手段が取られているが、空
隙Gの長さを成る限度を超えて短くする事が出来ず変換
効率を高められないという問題があった。[Problems to be solved by the invention] In the magnetic sensor according to the prior art, as shown in figure (b), only a part of the magnetic flux emitted from the permanent magnet penetrates the inside of the magnetoresistive element, and the magnetic flux is detected. However, since most of the other flux does not pass through the magnetoresistive element, the detection efficiency of the magnetic flux is low.In order to increase the detection efficiency, the gap G between the permanent magnet and the magnetic sensor is shortened to reduce the magnetic resistance. Although measures have been taken to increase the effective magnetic flux penetrating the element, there is a problem in that the length of the air gap G cannot be shortened beyond a certain limit, and the conversion efficiency cannot be increased.
(2)発明の構成
[問題点を解決するための手段]
本発明は前記のような従来技術における問題を解決する
ため、磁気センサを構成する絶縁基板上に形成した複数
の磁気抵抗素子と隣接する空間に磁性体の薄膜を他の導
電部と絶縁して配設した構造の磁気センサを提供するも
のである。(2) Structure of the Invention [Means for Solving the Problems] In order to solve the problems in the prior art as described above, the present invention provides a magnetic sensor with a plurality of magnetoresistive elements formed on an insulating substrate constituting a magnetic sensor. The present invention provides a magnetic sensor having a structure in which a thin film of magnetic material is disposed in a space insulated from other conductive parts.
[作 用]
本発明になる磁気センサは磁気抵抗素子と隣接する空間
に、磁気抵抗素子その他の導電部と絶縁して磁性体の薄
膜を形成したもので、永久磁石から発した磁束が前記絶
縁した磁性体の薄膜により誘導されて磁気抵抗素子の中
を平行に貫通する割合が増加し、変換効率を増加させる
作用効果がある。[Function] The magnetic sensor of the present invention has a thin film of magnetic material formed in a space adjacent to the magnetoresistive element and insulated from the magnetoresistive element and other conductive parts, so that the magnetic flux emitted from the permanent magnet flows through the insulation. The rate of parallel penetration through the magnetoresistive element is increased due to the magnetic thin film, which has the effect of increasing the conversion efficiency.
[発明の実施例]
第1図は本発明の実施例を示す磁気センサの平面図(a
)と、磁気抵抗素子と永久磁石との間の磁束の流れを示
す断面図(b)である。[Embodiment of the invention] FIG. 1 is a plan view (a) of a magnetic sensor showing an embodiment of the invention.
) and a cross-sectional view (b) showing the flow of magnetic flux between the magnetoresistive element and the permanent magnet.
(a)図においてガラス等の絶縁基板3−1の表面に磁
性体の薄膜により複数の(図示の例では4個)磁気抵抗
素子4−1をπのピッチで配設し、該素子の端子部4−
3と2個の素子の接続部と引出点の端子部を兼ねる4−
2と、前記磁気抵抗素子4−1と前記引出部4−2との
空間部に磁束誘導部5を他の導電部と絶縁して設けた構
造が特徴である。(a) In the figure, a plurality of (four in the illustrated example) magnetoresistive elements 4-1 are arranged at a pitch of π using a thin film of magnetic material on the surface of an insulating substrate 3-1 made of glass or the like, and terminals of the elements are arranged. Part 4-
3 and 4-, which also serves as the connection part of the two elements and the terminal part of the extraction point.
2, it is characterized by a structure in which a magnetic flux guiding part 5 is provided in a space between the magnetoresistive element 4-1 and the lead-out part 4-2, insulated from other conductive parts.
磁束誘導部5の作用効果は(b)の断面図に示すように
永久磁石から発した磁束は磁束誘導部5に誘導されて磁
気抵抗素子4−1の中を平行に通過する割合が増加し、
変換効率が高くなり同じ空隙Gの長さの場合に磁気セン
サ3の出力電圧が増加する効果があり、ある実施例にお
いては約10%の増加が得られた実験例がある。As shown in the cross-sectional view of (b), the effect of the magnetic flux guiding section 5 is that the proportion of magnetic flux emitted from the permanent magnet being guided by the magnetic flux guiding section 5 and passing through the magnetoresistive element 4-1 in parallel increases. ,
This has the effect of increasing the conversion efficiency and increasing the output voltage of the magnetic sensor 3 when the length of the air gap G is the same, and in some experimental examples, an increase of about 10% was obtained.
又磁束誘導部5は磁気抵抗素子と同じ磁性体の薄膜で、
磁気抵抗素子を形成するときに同時に形成されるので新
たに材料部品を必要としない。Moreover, the magnetic flux guide part 5 is a thin film of the same magnetic material as the magnetoresistive element,
Since it is formed at the same time as forming the magnetoresistive element, no new material parts are required.
[発明の効果]
本発明は前記のような構成であるから磁気センサの複数
の磁気抵抗素子及び引出部とに隣接した空間に磁性体の
薄膜により磁束誘導部を他の導電部と絶縁して配設する
ことにより、磁気抵抗素子に作用する有効磁束を増加せ
しめ磁気センサの変換効率を高めることが出来た結果永
久磁石と磁気センサとの空隙の長さを長く出来る効果が
ある。[Effects of the Invention] Since the present invention has the above-described configuration, the magnetic flux guiding part is insulated from other conductive parts by a thin film of magnetic material in the space adjacent to the plurality of magnetoresistive elements and the lead-out part of the magnetic sensor. This arrangement increases the effective magnetic flux acting on the magnetoresistive element and increases the conversion efficiency of the magnetic sensor, which has the effect of increasing the length of the gap between the permanent magnet and the magnetic sensor.
第1図は本発明になる磁気センサの平面図(a)と永久
磁石と磁気センサとの間の磁束の流れを示す断面図(b
)と、第2図は従来技術による磁気センサの平面図(a
)と、永久磁石と磁気センサの間の磁束の流れを示す断
面図(b)と、第3図は従来より実施されている磁気エ
ンコーダの概念図(a)と、磁気ドラムの永久磁石と磁
気センサの磁気抵抗素子との相関を示す図(b)と、電
気回路図(c)である。
符号の説明
1・・・回転軸、2・・・磁気ドラムの永久磁石、3・
・・磁気センサ、3−1・・・絶縁基板、4.4−1・
・・磁気抵抗素子、4−2・・・接続部、4−3・・・
端子部。
5・・・磁束誘導部、R□R,R,R,、・・・磁気抵
抗素子の抵抗、E・・・電源。
特許出願人 日本サーボ株式会社FIG. 1 is a plan view (a) of a magnetic sensor according to the present invention and a cross-sectional view (b) showing the flow of magnetic flux between a permanent magnet and the magnetic sensor.
) and FIG. 2 is a plan view of a magnetic sensor according to the prior art (a
), a cross-sectional view (b) showing the flow of magnetic flux between the permanent magnet and the magnetic sensor, and FIG. They are a diagram (b) showing the correlation with the magnetoresistive element of the sensor and an electric circuit diagram (c). Explanation of symbols 1... Rotating shaft, 2... Permanent magnet of magnetic drum, 3...
...Magnetic sensor, 3-1...Insulating substrate, 4.4-1.
... Magnetoresistive element, 4-2... Connection part, 4-3...
Terminal section. 5... Magnetic flux guiding part, R□R, R, R,... Resistance of magnetic resistance element, E... Power source. Patent applicant Nippon Servo Co., Ltd.
Claims (1)
抵抗素子を有する磁気センサにおいて、前記絶縁基板上
の前記複数の磁気抵抗素子に隣接した空間部に、強磁性
体薄膜を他の導電部と絶縁して形成したことを特徴とす
る磁気センサ。In a magnetic sensor having a plurality of ferromagnetic thin film magnetoresistive elements formed on an insulating substrate, a ferromagnetic thin film is placed in a space adjacent to the plurality of ferromagnetic thin film magnetoresistive elements on the insulating substrate. A magnetic sensor characterized by being formed insulated from a portion of the magnetic sensor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62291743A JPH01134979A (en) | 1987-11-20 | 1987-11-20 | Magnetosensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62291743A JPH01134979A (en) | 1987-11-20 | 1987-11-20 | Magnetosensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01134979A true JPH01134979A (en) | 1989-05-26 |
Family
ID=17772830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62291743A Pending JPH01134979A (en) | 1987-11-20 | 1987-11-20 | Magnetosensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01134979A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11784644B2 (en) | 2021-06-30 | 2023-10-10 | Panasonic Intellectual Property Management Co., Ltd. | Rotation detector and imaging device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62206891A (en) * | 1986-03-06 | 1987-09-11 | Yaskawa Electric Mfg Co Ltd | Magnetoresistance effect element |
-
1987
- 1987-11-20 JP JP62291743A patent/JPH01134979A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62206891A (en) * | 1986-03-06 | 1987-09-11 | Yaskawa Electric Mfg Co Ltd | Magnetoresistance effect element |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11784644B2 (en) | 2021-06-30 | 2023-10-10 | Panasonic Intellectual Property Management Co., Ltd. | Rotation detector and imaging device |
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