JPS62206855A - Wiring structure of semiconductor device - Google Patents

Abstract

PURPOSE:To correct a wiring path for a semiconductor device manufactured once partially and easily, and to improve productivity by previously forming a wiring pattern row for correction to the uppermost layer section of a semiconductor substrate. CONSTITUTION:A wiring pattern 1 for correction is arranged to the uppermost layer section of a semiconductor substrate 5, and shaped to a section upper than the layer of an existing wiring 2 cut by laser beams or the like. An insulating film (SiO2) 3 is also cut off simultaneously together with the existing wiring 2 by the cutting operation of the existing wiring 2. A spot 6 for connection of laser-beams is directed between the cut existing wiring 2 and the adjacent wiring pattern 1 for correction to connect the wiring 2 and the wiring pattern 1. The spot 6 for connection can connect a fixed pattern for wiring in an uppermost layer gradually in the same manner. A wiring path 7 corrected by such operation is acquired.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a wiring structure of a semiconductor device.

[Prior art and its problems]

Semiconductor devices manufactured on a substrate may malfunction due to delays in signal propagation time or pattern defects that occur on wiring paths. Semiconductor devices that are defective due to these characteristics and manufacturing technique 1 can often be repaired by partially correcting the wiring route.

Conventionally, in order to modify the wiring route of a semiconductor device, it was necessary to cut the route to be modified using a laser beam, etc., and then connect a new route to the cut point to make the connection. By forming a highly conductive metal into plasma on the semiconductor device to be processed, and then irradiating the target area with a laser beam, the metal in the plasma adheres to the surface of the semiconductor device. A conductor can be formed. Thus, by nudging the spot from one cutting point, a conductor can be formed to form a path to the other. However, with such conventional methods, it takes time to draw the path in proportion to the number of laser beam spots, and metal in the form of plasma is attached to the surface of the semiconductor device and used for wiring. This has the disadvantage that it is difficult to modify the wiring route of a semiconductor device due to low reliability of the pattern.

SUMMARY OF THE INVENTION An object of the present invention is to improve the productivity of semiconductor devices by facilitating partial correction of wiring routes in a semiconductor device once manufactured, thereby providing relief in the event of a defective operation.

[Means for solving problems]

The wiring structure of the semiconductor device of the present invention includes contact holes formed by opening a part of the insulating film to connect the wiring layers and the insulating film alternately formed between layers on the substrate and the adjacent wiring layers. The correction wiring pattern array is formed in advance on the wiring layer which is the uppermost layer between the layers.

When a semiconductor device is first created on a substrate, it is realized without using the top layer for wiring. With today's semiconductor device design and manufacturing technology, the semiconductor devices realized here may have malfunctions due to increased delay time depending on the length of the wiring path or pattern defects. It happens often.

Therefore, the following method is used to remedy this defective operation.

First, cut out the part that contains the defective part. next,
The closest wiring pattern on the top layer from that cutting point,
Subo-soto-like radar in highly conductive metal plasma
・Connect using methods such as beam irradiation. Subsequently, the above-mentioned wiring patterns for correction are connected to each other on the uppermost layer to realize a connection that reaches the other cutting point.

In this series of operations, the amount of spot laser beam required after cutting the existing wiring is not for the entire path, but only for the connection between fixed patterns for correction. Corrections can be made faster because there are fewer paths, and the corrections can be made more reliably because the corrected path has fewer patterns formed by the laser beam.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

1(a) to d> are plan views showing the situation from wiring cutting to repair in one embodiment of the present invention, and FIGS. 2(a) and 2(b) are A-A in FIG. 1(a). Cross-sectional views before and after cutting the wiring at line A, Figure 2 (c) is the same as Figure 1 (B in (1)
It is a sectional view at -B@.

This embodiment includes a wiring pattern for modification 1, an existing wiring pattern 2, and an insulation pattern 11.
13, an insulating oxide film 4 and a semiconductor substrate 5. As shown in FIGS. 1 and 2, wiring patterns 1 for correction are arranged on the uppermost layer of a semiconductor substrate 5 and are provided above the layer of existing wiring 2 to be cut by a laser beam or the like.

The cutting operation for the existing wiring 2 is carried out on the 6th cutting surface A-A in Fig. 1(a).
For example, in the state shown in FIG. 2(a), which is a corresponding cross-sectional view, the insulating film (Si02) is
3 is also excised at the same time, resulting in the state shown in FIG. 2(b). Next, as shown in FIG. 1(b), a laser beam connection spot 6 is applied between the cut existing wiring 2 and the adjacent correction wiring pattern 1 to make a connection.This wiring spot 9 6, fixed patterns for wiring in the uppermost layer can be connected in the same manner. A plan view of the connection slot 6 that connects the wiring patterns is shown in FIG. Through the above operations, a modified wiring route 7 as shown in FIG. 1(d) is obtained. The conventional method for correcting the pattern range shown in Figure 1 is
5F11 wiring spots were required, but in this embodiment, connections can be made with 3 wiring spots. [Effects of the Invention] As explained above, the present invention provides a method for making connections on the top layer of a semiconductor substrate. By forming the wiring pattern array in advance, it is possible to reduce the number of laser beam connection spots necessary for correcting the path pattern of a semiconductor device, and therefore, there is an effect that speeding up the path correction can be realized. Furthermore, it is possible to use the same manufacturing technology as the underlying wiring layer for the wiring pattern that has been prepared in a rough manner, and the reliability of the corrected pattern can be improved. Further, for wiring with a large delay time, by providing a detour route using a correction wiring pattern, the wiring resistance can be reduced and the delay time can be reduced.

[Brief explanation of drawings]

FIGS. 1(a) to d) are plan views showing the situation from wiring cutting to repair in one embodiment of the present invention, and FIGS. 2(a) and (b) are A--A in FIG. 1(a). Cross-sectional views before and after cutting the wiring at line A, FIG. 2(c) is B- in FIG. 1(d)
It is a sectional view taken along the B line. 1... Wiring pattern for correction, 2... Existing wiring, 3...
- Insulating film, 4... Insulating oxide film, 5... Semiconductor substrate,
6...Yui CG)

Claims (1)

[Claims] In the wiring structure of a semiconductor device comprising wiring layers alternately formed between layers on a substrate, an insulating film, and a contact hole formed by opening a part of the insulating film to connect adjacent wiring layers, 1. A wiring structure for a semiconductor device, comprising a correction wiring pattern array formed in advance on a wiring layer that is the uppermost layer between layers.