JPS62205684A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPS62205684A JPS62205684A JP4884586A JP4884586A JPS62205684A JP S62205684 A JPS62205684 A JP S62205684A JP 4884586 A JP4884586 A JP 4884586A JP 4884586 A JP4884586 A JP 4884586A JP S62205684 A JPS62205684 A JP S62205684A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- type
- emitting device
- layer
- crystal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 125000005842 heteroatom Chemical group 0.000 claims abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 125000004429 atom Chemical group 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
Landscapes
- Semiconductor Lasers (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体レーザ素子のような半導体発光装置であ −って
、レーザ素子のような半導体発光素子より出射される光
をモニタするホトダイオードを、レーザ素子の出射端面
の片側に絶縁膜を介してアモルファスシリコン（αＳｉ
）のＰＮ接合、或いはαＳｉとアモルファスシリコンゲ
ルマニウム（α５ｉＧｅ）とのへテロＰＮ接合でレーザ
素子と一体的に成るように形成し、形成される発光装置
の小型化、低コスト化を図るようにする。[Detailed Description of the Invention] [Summary] In a semiconductor light-emitting device such as a semiconductor laser element, a photodiode for monitoring light emitted from the semiconductor light-emitting element such as a laser element is connected to the output end face of the laser element. Amorphous silicon (αSi) is placed on one side through an insulating film.
) or a hetero PN junction of αSi and amorphous silicon germanium (α5iGe) to be formed integrally with the laser element, thereby reducing the size and cost of the formed light emitting device. .
本発明は半導体発光装置、特に発光素子より出射される
モニタ光を測定するホトダイオードを発光素子と一体的
に形成した半導体発光装置に関する。The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device in which a photodiode for measuring monitor light emitted from a light emitting element is integrally formed with the light emitting element.
光通信システムの光源として用いる半導体レーザ素子等
は益々小型化する事が、形成される電子機器の小型化を
図るために要望されている。BACKGROUND OF THE INVENTION It is desired that semiconductor laser elements used as light sources in optical communication systems be made smaller and smaller in order to miniaturize the electronic devices formed thereon.
このような光通信システムに於いては、光源となる半導
体レーザ素子より集光レンズを透過して光ファイバ等に
出射されるレーザ光の強度を１ｊｌＪ整するために、集
光レンズに対する側と反対側に照射されるレーザ光の強
度をホトダイードを用いてモニタ光として検出し、この
モニタ光の強度を検知してレーザ素子に印加される電流
を調節してレーザ素子より照射される光の強度を制御す
る方法が採られている。In such an optical communication system, in order to adjust the intensity of the laser light transmitted from the semiconductor laser element serving as the light source through the condensing lens and emitted to the optical fiber, etc. by 1JlJ, the side opposite to the condensing lens is The intensity of the laser light irradiated to the side is detected as monitor light using a photodiode, and the intensity of the monitor light is detected and the current applied to the laser element is adjusted to adjust the intensity of the light irradiated from the laser element. A method of control is being adopted.
従ってこのような半導体レーザ素子と、照射される光を
モニタするホトダイオードとを一体化した小型の半導体
発光装置が要望されている。Therefore, there is a need for a compact semiconductor light emitting device that integrates such a semiconductor laser element and a photodiode that monitors the emitted light.
第３図は従来の半導体発光装置のうちの半導体レーザ素
子の一例を示す斜視図で、例えばＮ型のガリウム−砒素
（ＧａＡｓ）基板１にＶ字溝２が形成された後、その上
にＮ型のＧａＡｓ結晶層３が液相エピタキシャル成長法
で形成された後、レーザ発光する活性領域４のガリウム
−アルミニウムー砒素（ＧａＡＩＡｓ）結晶層５が、液
相エピタキシャル成長法で形成されている。FIG. 3 is a perspective view showing an example of a semiconductor laser element in a conventional semiconductor light emitting device. After the GaAs crystal layer 3 is formed by the liquid phase epitaxial growth method, the gallium-aluminum-arsenide (GaAIAs) crystal layer 5 of the active region 4 that emits laser light is formed by the liquid phase epitaxial growth method.
更にその上には、Ｐ型のＧａＡｌＡｓ結晶層６とＰ型の
ＧａＡｓ結晶層７が順次積層形成された後、その上に金
を主体とする合金が電極８としてスパッタ法等を用いて
形成されている。Furthermore, a P-type GaAlAs crystal layer 6 and a P-type GaAs crystal layer 7 are sequentially laminated thereon, and then an alloy mainly composed of gold is formed as an electrode 8 using a sputtering method or the like. ing.
更にこの基板１の底部にも電極９が形成されている。Furthermore, an electrode 9 is also formed on the bottom of this substrate 1.
そして矢印へに示すようにレーザ光が出射される素子の
端面ばへき関されて鏡面を呈している。As shown by the arrow, the end face of the element from which the laser beam is emitted is connected to form a mirror surface.
ところで、このような半導体レーザ素子を光通信システ
ムに用いようとすると、第２図に示すようにステム１１
に設置されたヒートシンク】２にこの素子１３を設置し
、集光レンズ１４を透過して光ファイバ１５に導入され
る光と反対側に照射される光をモニタするホトダイオー
ド１６を設け、このホトダイオード１６で検知したモニ
タ光を用いてレーザ素子１３に印加される電流を制御し
てレーザ素子１３より照射される光の強度を調節してい
る。By the way, when trying to use such a semiconductor laser element in an optical communication system, the stem 11 as shown in FIG.
This element 13 is installed on the heat sink installed in the heat sink] 2, and a photodiode 16 is provided to monitor the light that is irradiated on the opposite side of the light that passes through the condenser lens 14 and is introduced into the optical fiber 15. The intensity of the light emitted from the laser element 13 is adjusted by controlling the current applied to the laser element 13 using the monitor light detected by the laser element 13.
然し、上記したようにモニタダイオードを別個に設ける
半導体発光装置の構成では、この発光装置が大型化する
問題点がある。However, in the structure of a semiconductor light emitting device in which a monitor diode is separately provided as described above, there is a problem that the light emitting device becomes large.
またこのレーザ素子１３は、ＧａＡｌＡｓの結晶層５．
６のように大気中で酸化しやすい〜が用いられており、
その結晶層５，６の表面を大気より保護することが望ま
れている。This laser element 13 also has a GaAlAs crystal layer 5.
6, which is easily oxidized in the atmosphere, is used,
It is desired to protect the surfaces of the crystal layers 5 and 6 from the atmosphere.
本発明は上記した問題点を解決し、モニタダイオードと
レーザ素子のような発光素子とを一体化した小型の半導
体発光装置を提供するのを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems and provide a compact semiconductor light emitting device that integrates a monitor diode and a light emitting element such as a laser element.
本発明の半導体発光装置は、第１図に示すように半導体
発光素子の光出射端面４１，４２の片方の端面４１に絶
縁膜２６を設け、該絶縁膜２６上にα５ｉ２８によるホ
モＰＮ接合、或いはα５ｉ２８とα５ｉＧｅ２７による
ヘテロＰＮ接合のモニタ用ホトダイオードを設けて形成
されている。The semiconductor light emitting device of the present invention, as shown in FIG. It is formed by providing a monitoring photodiode of a hetero PN junction of α5i28 and α5iGe27.
ＧａＡｓを用いた半導体レーザ素子は、第１図に示すよ
うに、０．７８〜０．８９μｍの範囲の波長で発振して
おり、この発振波長の近傍の波長に高感度を有するα５
ｉ２８、或いはα５ｉＧｅ２７の材料を用いて、α５ｉ
２８のＰＮ接合、或いはα５ｉ２８とα５ｉＧｅ２７と
のへテロＰＮ接合を有するモニタダイオードを、前記し
た半導体レーザ素子と一体的に形成することでモニタダ
イオードを別個に設けることを必要とせず、従って装置
の小型化が図れる。As shown in Figure 1, a semiconductor laser device using GaAs oscillates at a wavelength in the range of 0.78 to 0.89 μm, and α5 has high sensitivity to wavelengths near this oscillation wavelength.
Using i28 or α5iGe27 material, α5i
By integrally forming a monitor diode having a PN junction of 28 or a hetero PN junction of α5i28 and α5iGe27 with the semiconductor laser element described above, it is not necessary to separately provide a monitor diode, and the device can therefore be made smaller. can be achieved.
以下、図面を用いて本発明の一実施例につき詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
本発明の半導体発光装置の横断面図を第１図に示し、第
１図の要部の斜視図を第２図に示す。A cross-sectional view of the semiconductor light emitting device of the present invention is shown in FIG. 1, and a perspective view of the main part of FIG. 1 is shown in FIG.
第１図および第２図に示すように、Ｎ型のＧａＡｓ基板
２１上には、図示しないが７字溝が形成され、その上に
はＮ型のＧａＡｌＡｓ結晶層２２が液相エピタキシャル
法で形成され、その上にはＧａＡｌＡｓの結晶層が活性
層２３として液相エピタキシャル法で形成され、更にそ
の上にはＰ型のＧａＡｌＡｓ結晶層２４、およびＰ型の
ＧａＡｓ結晶Ｎ２５が順次液相エピタキシャル成長法で
形成されている。As shown in FIGS. 1 and 2, a 7-shaped groove (not shown) is formed on an N-type GaAs substrate 21, and an N-type GaAlAs crystal layer 22 is formed thereon by a liquid phase epitaxial method. On top of that, a GaAlAs crystal layer is formed as an active layer 23 by liquid phase epitaxial growth, and further above that, a P-type GaAlAs crystal layer 24 and a P-type GaAs crystal N25 are sequentially grown by liquid phase epitaxial growth. It is formed.
このような基板２１および結晶層のレーザ光が出射され
る出射端面４１，４２にはスパッタ法等を用いて二酸化
シリコン（ＳｉＯ２）膜、窒化珪素膜、酸化アルミニウ
ム（ＡＯ２０３） ＭｔＡ等の絶縁膜２６が形成されて
いる。An insulating film 26 of silicon dioxide (SiO2) film, silicon nitride film, aluminum oxide (AO203), MtA, etc. is formed on the substrate 21 and the output end faces 41 and 42 of the crystal layer from which laser light is emitted by using a sputtering method or the like. is formed.
この絶縁膜２６の厚さは、従来の装置に於けるへき開面
と同様な光学的特性を有するように、所定の厚さに形成
されている。This insulating film 26 is formed to have a predetermined thickness so as to have optical characteristics similar to those of the cleavage plane in a conventional device.
次いでレーザ光が出射する出射端面４１，４２のうちの
片方の端面４１に、スパッタ法、或いはプラズマＣＶＤ
を用いてＰ型の不純物原子の硼素（Ｂ）が添加されたα
５ｉＧｅ層２７を形成し、その上にＮ型の不純物原子の
燐（Ｐ）が添加されたアモルファスシリコン（αＳｉ）
層２８を形成する。Next, one end face 41 of the emission end faces 41 and 42 from which the laser beam is emitted is processed by sputtering or plasma CVD.
α to which boron (B) as a P-type impurity atom is added using
Amorphous silicon (αSi) on which a 5iGe layer 27 is formed and phosphorus (P), which is an N-type impurity atom, is added.
Form layer 28.
次いでこのＮ型のαＳｉＳｉ３Ｏ４部が除去された後、
Ｐ型のα５ｉＧｅ層２７にはチタンと金を主体とする電
極２９が形成され、Ｎ型のαＳｉＳｉ層上８上チタンと
金−ゲルマニウムを主体とする電極３０が形成され、α
ＳｉによるＰＮ接合ダイオードが形成されている。Then, after this N-type αSiSi3O4 part is removed,
An electrode 29 mainly made of titanium and gold is formed on the P-type α5iGe layer 27, and an electrode 30 mainly made of titanium and gold-germanium is formed on the N-type αSiSi layer 8.
A PN junction diode made of Si is formed.
またＮ型のＧａＡｓ基板２１の底部には、このレーザ素
子を動作させるためのチタンと金−ゲルマニウムを主体
とする電極３１が蒸着等を用いて形成され、Ｐ型のＧａ
＾Ｓ結晶層２５の上部にはチタンと金を主体とせる電極
３２が形成されている。Further, on the bottom of the N-type GaAs substrate 21, an electrode 31 mainly made of titanium and gold-germanium for operating this laser element is formed by vapor deposition or the like.
An electrode 32 mainly made of titanium and gold is formed on the top of the ^S crystal layer 25.
このような本発明の半導体発光装置によれば、レーザ素
子より出射される光をモニタするモニタダイオードがレ
ーザ素子と一体的に形成されているため、形成される装
置が小型となり、光通信システム等の電子装置に本発明
の発光装置を用いれば、電子装置が小型なものとなる。According to the semiconductor light emitting device of the present invention, the monitor diode that monitors the light emitted from the laser element is formed integrally with the laser element, so the formed device can be miniaturized and can be used in optical communication systems, etc. If the light emitting device of the present invention is used in an electronic device, the electronic device can be made smaller.
また大気中に曝すと酸化しやすい八Ωを含んだＧａＡＩ
ＡＳの結晶層が、絶縁膜で被覆されるため、発光素子の
劣化するのを防ぐことができる。Also, GaAI containing 8Ω is easily oxidized when exposed to the atmosphere.
Since the AS crystal layer is covered with an insulating film, deterioration of the light emitting element can be prevented.
尚、本実施例ではαＳｉとα５ｉＧｅとのへテロＰＮ接
合を用いてモニタダイオードを形成したが、αＳｉどう
しのＰＮ接合ダイオードをモニタダイオードとして設け
ても良い。In this embodiment, the monitor diode is formed using a hetero PN junction of αSi and α5iGe, but a PN junction diode of αSi may be provided as the monitor diode.
また本実施例に於けるように、ＧａＡｓを主材料として
用いた半導体レーザ素子以外の発光波長の異なる発光素
子を用いる場合は、その半導体発光素子の発光波長によ
ってαＳｉ、或いはα５ｉＧｅの混晶比を制御すること
で、これ等の材料のハンド幅を変化させ、レーザ素子よ
り出射される光に対して感度を高めたモニタダイオード
形成すると、より高信頼度の半導体発光装置が得られる
。Furthermore, as in this example, when using a light emitting element with a different emission wavelength other than a semiconductor laser element using GaAs as the main material, the mixed crystal ratio of αSi or α5iGe may be adjusted depending on the emission wavelength of the semiconductor light emitting element. By controlling the hand width of these materials and forming a monitor diode with increased sensitivity to the light emitted from the laser element, a more reliable semiconductor light emitting device can be obtained.
以上述べたように本発明の半導体発光装置によれば、レ
ーザ素子のような半導体発光素子とこの素子より出射さ
れる光をモニタする検知素子が一体的に形成されるため
、小型の半導体発光装置が得られる効果がある。As described above, according to the semiconductor light emitting device of the present invention, since the semiconductor light emitting device such as a laser device and the detection element that monitors the light emitted from this device are integrally formed, the semiconductor light emitting device is small. There is an effect that can be obtained.
第１図は本発明の半導体発光装置の横断面図、第２図は
第１図の要部を示す斜視図、
第３図は従来の半導体発光装置の斜視図、第４図は従来
の発光装置を電子機器装置に取りつけた断面図である。
図に於いて、
２１はＮ型ＧａＡｓ基板、２２はＮ型ＧａＡｌＡｓ結晶
層、２３は活性層、２４はＰ型ＧａＡｌへｓ結晶層、２
５はＧａＡｓ結晶層、２６は絶縁膜、２７はＰ型α５ｉ
Ｇｅ層、２８はＮ型αＳｉ層、２９．３０．３１ 、３
２は電極、４１．４２は出射端面を示す。
滓発明４１、特伴Ｔ育戎口
＠ ２図
第 ３ 図FIG. 1 is a cross-sectional view of a semiconductor light emitting device of the present invention, FIG. 2 is a perspective view showing the main parts of FIG. 1, FIG. 3 is a perspective view of a conventional semiconductor light emitting device, and FIG. 4 is a conventional light emitting device. FIG. 2 is a cross-sectional view of the device attached to an electronic device. In the figure, 21 is an N-type GaAs substrate, 22 is an N-type GaAlAs crystal layer, 23 is an active layer, 24 is a P-type GaAl s crystal layer, 2
5 is a GaAs crystal layer, 26 is an insulating film, 27 is a P-type α5i
Ge layer, 28 is N-type αSi layer, 29.30.31, 3
Reference numeral 2 indicates an electrode, and reference numerals 41 and 42 indicate an output end face. Slag Invention 41, Special Ban T Education Ebisuguchi @ Figure 2 Figure 3
Claims (1)
縁膜（２６）を設け、該絶縁膜（２６）上にアモルファ
スシリコン（２８）によるＰＮ接合、或いはアモルファ
スシリコン（２８）とアモルファスシリコンゲルマニウ
ム（２７）によるヘテロＰＮ接合を形成し、該ＰＮ接合
を用いたモニタ用ホトダイオードを前記発光素子と一体
的に設けたことを特徴とする半導体発光装置。An insulating film (26) is provided on one of the light emitting end faces (41, 42) of the semiconductor light emitting device, and a PN junction made of amorphous silicon (28) is formed on the insulating film (26), or a PN junction made of amorphous silicon (28) and amorphous silicon germanium is formed on the insulating film (26). A semiconductor light emitting device characterized in that a hetero PN junction according to (27) is formed, and a monitoring photodiode using the PN junction is provided integrally with the light emitting element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4884586A JPS62205684A (en) | 1986-03-05 | 1986-03-05 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4884586A JPS62205684A (en) | 1986-03-05 | 1986-03-05 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62205684A true JPS62205684A (en) | 1987-09-10 |
Family
ID=12814591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4884586A Pending JPS62205684A (en) | 1986-03-05 | 1986-03-05 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62205684A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1009032A1 (en) * | 1998-12-11 | 2000-06-14 | Hewlett-Packard Company | System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer |
| US6633598B1 (en) * | 1997-08-28 | 2003-10-14 | Canon Kabushiki Kaisha | Semiconductor laser device, and image forming apparatus |
-
1986
- 1986-03-05 JP JP4884586A patent/JPS62205684A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6633598B1 (en) * | 1997-08-28 | 2003-10-14 | Canon Kabushiki Kaisha | Semiconductor laser device, and image forming apparatus |
| EP1009032A1 (en) * | 1998-12-11 | 2000-06-14 | Hewlett-Packard Company | System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer |
| US6483862B1 (en) | 1998-12-11 | 2002-11-19 | Agilent Technologies, Inc. | System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer |
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