JPS62204504A - Amorphous soft magnetic film and manufacture thereof - Google Patents

Abstract

PURPOSE:To provide a soft magnetic film which has large saturated magnetic flux density and excellent absolute value of magnetostrictive constant by forming an amorphous Co-Zr alloy by a low acceleration type ion beam sputtering method. CONSTITUTION:A soft magnetic film is formed of Co-Zr amorphous alloy which contains 2-5atom% of Zr, and the residue of Co. A chamber 2 has therein a substrate holder 3 for mounting a substrate 4, and a target holder 5 including a target 6. The target 6 is composed by mounting a plurality of Zr chips on the surface of a plate made of Co or employs a Co-Zr alloy plate. The chamber 2 is evacuated in vacuum, the holder 3 is rotated while being water-cooled, an ion beam gun 1 is operated by setting the ion beam accelerating voltage to a low voltage of 600V or lower, the ion beam is collided to the target 6 through a grid 11, sputtered, and a soft magnetic film made of the atoms of the target 6 is bonded to the substrate 4. A Co-Zr amorphous soft magnetic film can be formed on the substrate 4 by the above-mentioned operation.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an amorphous soft magnetic film and a method for manufacturing the same, and is particularly suitable for use in fXV magnetic heads having a large saturation film M1 flux height, and furthermore, The present invention relates to amorphous soft rLe having excellent magnetic properties with the absolute value of the magnetostriction constant being less than lXl0-' and a method for producing the same.

``Prior art'' The Go-Zr binary amorphous alloy has soft melting properties and is saturated with magnetism! Because fT has excellent magnetic properties such as high density, low coercive force, and high magnetic permeability in the high frequency range, we developed a thin magnetic head for magnetic recording fα device 11 with the aim of achieving high recording density and high speed. By the way, when manufacturing a magnetic head using this kind of soft-melting IIQ layer, if the magnetostriction of the soft magnetic film is large, Since the magnetic properties of the thin film are subject to stress from the insulating film and the like which are successively multiplied by 1, the stability of the ?U magnetic conversion characteristics of the thin film magnetic node is lowered.

Therefore, when considering the magnetostriction constant of the conventionally known Co-Zr binary amorphous alloy, 7. 5~! OI
+: It is known that the magnetostriction constant of a normal Co-Zr binary amorphous alloy containing i% is high in the range of +2 to +7XIQ''.For this reason, Co-Zr
When an r-binary amorphous alloy is used as a material for a thin film magnetic head, the magnetostriction constant has been reduced using the shift method described below.

A method of reducing magnetostriction to close to 0 by adding Nb, 1" a, etc., which is a third amorphization base tree with a negative magnetostriction constant a, to form a ternary alloy.

(Addition of Nb is described in the following literature.

Shimada, Kojima, Amorphous Soft Magnetic Film, Tohoku University Research Institute Nonbonoum, “Perpendicular Magnetic Recording J, P Ill, 19112
March.

Further, regarding the addition of 'ra, the following documents 1 and 2 are described.

Y, IIosi, Il, Kazama, M, Nao.
e and SY amanaka, M ag
ne daycPropCrmouthes or 'lar.

~la! l! nctostriction Co-T
a −Z r A morN+ousA l1oy F
11m5 D epnsiLed 13 y ItF
Sputtering.

I P, E E Trans, , MA G 1
9-5. P 1958.1983) 2) It must be a third element that does not contribute to amorphization 1; Turtle's li+・
(Reniuno,) added 4 degrees, L is Go-Z
A method for greatly reducing the magnetostriction of r-based amorphous alloys. (A, Tago, C, Nishimura
andK, Yanagisava, Mag
netic properties orl on
Beam 5puLtarc+I Co -Zr an
dCo-Zr-RcAmorphous Fil
ms, IEEE'r'rans,.

M A G 21-5. r' 2Q32.1985
(2003) "Problems to be Solved by the Invention" However, if any of the methods described in 1i. Co- without adding three elements
Compared to the Zr binary 7-morphous alloy, the Co content is relatively smaller by 3 due to the addition of the third element, which has the drawback of lowering the saturation magnetic flux density.

By the way, in the Go-Zr binary amorphous alloy, the influence of the Zr content (r ton) on the magnetic properties should be examined. When the Zr content nfft is in the range of 5 to 7 at%, the magnetostriction constant is shall indicate +2 to +7 x 10°6 (Y,
Shimada and Il, Kojima,...
J.

Δapple, I'hys, , vol153. No
, 4, r'3156. from 1982) is known, and it is further known that when the m content of Z is less than 5 at %, amorphization is inhibited and the magnetostriction constant increases slowly. It is known that in the alloy listed in No. 11, when the Zr content *m increases, the saturation magnetic flux density decreases greatly in proportion to the content, and the decrease m per 1 atomic % increase in Zr content *rn is It reaches 6000s.

Therefore, if you want to obtain excellent magnetic properties, Z
It is essential to form a soft magnetic film by amorphizing a Co-Zr binary alloy with low T1 and to reduce the absolute value of the magnetostriction constant.

However, in conventional methods for manufacturing amorphous alloys such as rtF sputtering, magnetron sputtering, vapor deposition, and two-grid Sugi high acceleration voltage ion beam sputtering, It was difficult to find a way to form a film by amorphizing a Co--Zr binary alloy containing (f).

The present invention takes into account the problems described in item n;
This was done based on the inventor's knowledge that r2 binary gold can be made amorphous, and the purpose is to have a large saturation magnetic flux density, so that the absolute value of the strain constant is
It is an object of the present invention to provide a soft magnetic film made of a Co-Zr binary amorphous alloy that exhibits an excellent value of 0°6 or less, and to provide a process for manufacturing the soft magnetic film.

[Means for solving the problems] In order to solve the above problems, the soft magnetic film of the present invention has the following features:
．． Co- containing 11% of r2~5 prefectures and the remainder being Go
It is made of an amorphous alloy of the 7,r binary system.

The method of the present invention is a method for manufacturing the above-mentioned soft magnetic film, in which an ion beam is irradiated onto targets temporarily provided facing each other using the ion beam sputtering method, and the acceleration voltage of the ion beam is set to 600 V or less. Then, a soft magnetic film is formed.

"Saku 111J The soft magnetic film of the present invention is composed of an amorphous Co-Zr binary alloy containing 2 to 5 atomic percent Z" and does not contain any third element, so it has excellent magnetic properties. demonstrate.

In addition, in the manufacturing method of the present invention, GOOV
By carrying out ion heat packing at the following low accelerating voltage, 2 to 51i1% of Z' was added to fTZ Co-Z.
It is possible to make an r-binary alloy amorphous and to make a soft magnetic film.

``Example J'' Figure 1 shows an example of a low acceleration voltage type ion beam spacing apparatus used for manufacturing the soft magnetic film of the present invention, and Figures 2 and 3 are for manufacturing using the apparatus shown in Figure 1. This shows the magnetic properties of the soft magnetic film.

Note that this ion beam spacing method fmA is
1↑-12591=The ion beam sputtering device as seen in No. 15 was developed and constructed.

The ion beam sputtering apparatus Δ shown in FIG. 1 is constructed by connecting an ion beat gun 1 to the side of a chamber 2. The ion beam sputtering apparatus Δ shown in FIG.

The chamber 2 has a circular cross section as shown in the drawing, and inside the chamber 2 there is a temporary holder 3 with a temporary holder 4 attached thereto;
A target-1: router 5 equipped with a target 6 is installed.

11'l +tL! ;+(Temporary holder 3 is chamber-2
Fixed by n 3 a on the side facing the center of the base l!
24, and is installed inside the chamber 2 so as to be able to rotate together with the substrate II as shown by the arrow in FIG.

The target holder 5 holds the target 6 in the J1 (
The ion beam gun 4 and the ion beam gun 1 are each installed inside the chamber 2 so as to face each other at an angle, and one beam is emitted.

By the way, in the case of this device, the target 6 was constructed by installing a Z "depth" on the surface of a plate made of CoH. is installed on the surface of CoLFZ iY/'J
This is because the composition of the soft magnetic film formed on the substrate 4 can be set to the required value (11) by appropriately changing the dispersion of the depth. Note that it is also possible to use a Co-Zr alloy plate as the target. do not have.

Further, the substrate holder 3 and the target holder 5 housed in the chamber 2 are provided by penetrating a door formed in the partition wall of the chamber 2 via an OUng, and these are provided with water cooling pipes and substrates. Lead wires, etc. for connecting the heating power source are connected.

Further, the n-numbered chamber 2 is connected to a vacuum device (not shown) via a communication path 7, and is capable of maintaining its interior in a vacuum (a configuration).

On the other hand, since the ion beam gun 1 is integrated into the side of the chamber 2, a cylindrical anode 10 disposed around the cathode 9 is connected to the cylindrical anode 10. It is insulated from the outer wall 14 through the outer wall 14, and a magnet 2 for plasma convergence is provided on the outside of the outer wall 4, and a glybut 11 is arranged between the cathode 9 and the target 6, and the grid 11 ion beam to target 6 via Jl<
It is now possible to shoot. Note that reference numeral 8 in the figure is a gas introduction path connected to the ion beam gun 1.

Next, a description will be given of the operation of forming soft magnetic material II on j, I; Fl, 4 using the ion beam sputtering apparatus shown in FIG.

To form a soft magnetic film on the substrate 4, first, the substrate 1 is mounted on the temporary holder 3, and the target 6 is placed on the target holder 5.
To attach the ion beam, the inside of the chamber 2 is emptied by 1°. Next, the substrate holder 3 is rotated while cooling with water, and the ion beam acceleration lu pressure is set to a low voltage of 600 V or less. Avoid operating the ion heater 1 and gun 1, and collide the ion beam with the target 6 through the grid 11 to perform sputtering to generate 1P1 consisting of the constituent atoms of the target 6.
Form 31 (tentative) ridges on the surface of 1.

By the following operations, a Go-Zr binary amorphous soft magnetic film can be formed on the substrate 4.The composition of the soft magnetic film to be formed on the substrate 4 is based on Co and Z in the target G. By setting the a content to a predetermined value, it is determined that 111 with 4° is possible. Therefore,]1 The nail formation of the target 6 is determined so that it has a concentration of 2 to 5 atomic%.In addition, the ion beam scattering device A having the IFj configuration is a two-attack grib type ion beam scattering device that has been developed since then. It is possible to form a film at a high deposition rate with a low acceleration voltage compared to the previous method.

11 "The soft magnetic film formed on the substrate 4 in 1.
It is made of a Co-Zr binary amorphous alloy containing 5 at. The value of lXlO-' is the maximum allowable value when constructing a 1-mole head.Therefore, when the soft magnetic film produced by the method of the present invention is used as a magnetic H material for a magnetic head, it is possible to achieve high recording density. It can respond to higher speeds and higher speeds, and can exhibit unparalleled recording and playback characteristics.

Figure 2 shows the magnetic properties of a Co-Zr binary amorphous soft magnetic film manufactured using the low-acceleration ion beam stabilization apparatus shown in Figure 1, where the curves f'and;Ia are magnetostrictive. The relationship between the constant and coercive force is shown, and the curve shows the relationship between the magnetostriction constant and specific resistance.

When producing this soft molten V1 film, it is transferred to an ion beam spacing device as part of the Corning H: ? J
Using microphone C Tsunote glass, Jl (Saka 1: Ruda 3
While rotating at 4 rpm to make the film quality uniform, the substrate 71 (ruder 3) was cooled with water and sputtering was performed while keeping the Hanasaka temperature at 30±5°C. Furthermore, the target 6 used was one in which a required number of Co and Zr chips were arranged.

As mentioned above? When the soft magnetic film was analyzed by X-ray fluorescence analysis and plasma flame analysis, it was found that the Zr content was
It has been shown that m is 2 to 5 atomic %. In addition, the film thickness was determined from the measured value using a cristal tube at the stepped portion.
It was ~4 μm. Furthermore, after the film was formed, the magnetic properties were measured after the film was oriented in a 500 Gs magnetic field in a furnace at 0°C.

From FIG. 2, C contains 2 to 5 at.% of Zr.

-Z "It has been found that the soft magnetic material ■・1 made of a binary amorphous alloy includes a composition in which the magnetostriction constant is 0. Furthermore, even if some variation occurs, the absolute magnetostriction constant is 1 (i
It has been found that it is possible to produce a soft magnetic film with a value of lXl0-' or less. Further, the saturation magnetic flux density of the Go-Zr binary amorphous alloy having the above composition was 165 to IO, 0 kGs. Co--Zr--Nb exhibits values of saturation magnetic flux density and magnetostriction constant close to O.

Comparing the saturation magnetic flux density of a conventional soft magnetic film made of a ternary amorphous alloy such as Co-Zr-ne, the saturation magnetic flux density of the conventional soft magnetic film is 13 kGs or less. is 20% lower than that of conventional soft magnetic film.
It showed a saturation magnetic flux density greater than 2%. Therefore, when a magnetic head is manufactured using a Go-Zr binary amorphous soft magnetic film having the above composition, the magnetic head is suitable for high recording density, and can also be used for media with higher coercivity. It is possible.

Figure 3 shows that when the low-acceleration ion beam sputtering device Q''LA shown in Figure 1 is used, a target containing 3.4 atomic % of Zr and the balance of CO is used, and the flow into the target is The current density of the ion beam was set to 0.24 mA/C.
The graph shows the magnetic properties of each soft magnetic film when each soft magnetic film is manufactured by changing the acceleration voltage while fixing it to m'. In FIG. 3, the curve ch<' shows the coercive force coefficient of each soft magnetic film manufactured at 5 acceleration and 7i pressure, and the curve d shows the specific resistance value of each soft magnetic film manufactured at each acceleration voltage.

From Figure 3, it can be seen that Zr-containing (Tm is fixed at 3.1 at%
Beam current flowing into the target is 0.24 mA/cI
It has been shown that when the voltage is fixed at +l', an amorphous soft material with high specific resistance and low coercive force can be manufactured by setting the acceleration voltage of the ion beam to 600 V or less. In addition, beam 11J flow is 0.24m
Δ/am", and Z "containing IT!Tt is lowered and measured, the highest accelerating voltage required for amorphization decreases. It is clear that the Co--Zr binary alloy can be made amorphous only when the accelerating voltage is set to 600 V or less.

In addition, it is possible to slightly increase the maximum acceleration voltage required for amorphization by reducing the current of the ion beam flowing into the target, but it is not practical for industrial use because the deposition rate will drop drastically. &T''! It is not possible. Therefore, the beam current (
Preferably 0.15 to 0.40 mA/cm'), and by setting the acceleration voltage to 600 V or less, the Co
It is possible to obtain a -Zr binary amorphous soft magnetic hole.

Therefore, in the present invention, the acceleration voltage of the ion beam is limited to 600V or less. Furthermore, when attempting to manufacture an amorphous soft magnetic film using the ion beam sputtering apparatus shown in Figure 1, a Co-Zr binary alloy containing less than 2 atomic percent of Z' becomes amorphous. It was impossible to do so.

Therefore, in the present invention, the lower limit of the Zr content is limited to 2 at %.

It should be noted that the ion beam spacing device used to implement the present invention is not limited to the configuration shown in the drawings, and the configuration of the ion beam gun, the shape of the chamber, etc. may be freely designed.

``Effects of the Invention'' As explained below, the soft magnetic film of the present invention is made of Go-7, r2, containing 2 to 5% of Z and the remainder being Co.
It consists of an amorphous alloy containing a
Originally, (because 1 was not added, the saturation magnetic 4! density was large, but the absolute magnetostriction constant 1fj or IX I O
−' Determine the following magnetic properties. Is the soft magnetic film formed using the conventional RF spacing method, high energy ion beam sputtering method, etc.? 7. Compared to the soft magnetic film of titIG, the magnetic properties are (T). Therefore, when the soft magnetic film of the present invention is used as a magnetic material for a magnetic head, it is possible to achieve high recording density. It can cope with higher speeds and exhibit excellent recording and reproducing characteristics.

In addition, the method of the present invention provides beam acceleration of 600v or less*t
Since the soft magnetic film is manufactured by the ion beam sputtering method in R, A4 contains Zr of 2 to 5 prefectures and 6.
- It is possible to make 8Q amorphous soft magnetic film by making the Co-Zr binary alloy amorphous. The amorphous soft magnetic film produced by the method of the present invention has a large saturation magnetic flux density a, and has an excellent absolute value of the magnetostriction constant of less than or equal to The soft magnetic film manufactured by IJ has superior magnetic properties compared to conventional soft magnetic films produced by conventional ItF sputtering, high-energy ion beam sputtering, etc. When the soft magnetic film produced by the method of the present invention is used as a magnetic material for a magnetic head, it can support higher recording densities and higher speeds, and exhibits excellent recording and p reproduction characteristics. Do it.

[Brief explanation of drawings]

Fig. 1 is a block diagram showing one embodiment of the apparatus used in the method of the present invention, and Fig. 2 shows the relationship between the specific resistance, coercive force, and magnetostriction constant of the soft magnetic film manufactured with the apparatus shown in Fig. 1. FIG. 3 is a diagram showing the relationship between specific resistance and coercive force of a soft magnetic film manufactured using the apparatus shown in FIG. 1 and by setting the accelerating voltage to a variable value. A... Ion beam sputtering device, 1...
・Ion beam gun, 2...Chamber, 3...Substrate holder, 1...... ]1 (1 counter, 5...Target holder, 6...・Target, 9...Cathode, IO...
Anode! 1...grid, 12...
···magnet.

Claims (2)

[Claims] (1) C containing 2 to 5 at% of Zr and the balance being Co
An amorphous soft magnetic film made of an o-Zr binary amorphous alloy. (2) C containing 2 to 5 at% of Zr and the balance being Co
A method for manufacturing a soft magnetic film made of an o-Zr binary amorphous alloy, using an ion beam sputtering method in which a film is formed on a substrate by irradiating an ion beam to a target provided opposite to the substrate, 1. A method of manufacturing an amorphous soft magnetic film, which comprises forming a soft magnetic film on a substrate by setting an acceleration voltage of an ion beam to 600 V or less.